Professional Documents
Culture Documents
Crystal Structure
Crystal Structure
minutes)
{100}
1
90
0
11
00
0.1
80
0
90
0
0.1
1000
WET
10
00
11
00
DRY
80
0
0.01
10
0.01
100
1000
10
100
1000
0.543 nm
Surface
1/4 down
{111}
{111}
(001)
Etch rate in KOH
log( cm)
(111)
Boron
0
1
Phosphorus
2
3
14
15
16
17
18
19
20
log(atoms/cm )
(100)
0.543 nm
[100]
(010)
0.543 2 nm
[100]
pister@ee.ucla.edu, 1/26/93
<100>
110
0.543 2 nm
Etching Si+Boron
(101)
(110)
(010)
(111)
(110)
44 gm in 100ml H 2O@ 85 C
{100} 1.4
{111} 0.0035
/min
SiO 2 0.0014
Si 3N 4 not etched
Si
28.1