'. What is sub threshold current?

The cutoff region described by I ds = 0, V gs < v J is also referred to as the subthreshold

-t-on, where I ds = 0 increases exponentially with Vd S and V gs .
31. What is channel length modulation?
The increase of the depletion layer width at the drain as the drain voltage is increased.
leads to a shorter channel length and an increased drain current is called Channel length
modulation in a MOS.

39. What is mobility variation?

The mobility II, is defined as the ratio of average carrier drift velocity (V) to the electric .
1c1 intensity (E)

Average carrier drift velocity (V) cm3

/V-sec

Electric filed intensity (E)

-u). What is drain punchthrough?

When the drain is at a high enough voltage with respect to the source, the depletion
around the drain and source regions merge into a single depletion region thus causing
to flow irrespective of the gate voltages. This is known as a punchthrough effect.
41. What is Impact Ionization?
When the length of the gate is reduced, the electric field at the drain of a transistor in
saturation increases. For submicron gate lengths, the field can become so high that electron
is imparted with enough energy to become "hot". The hot electrons impact the drain, dislodging
boles that are swept towards the negatively charged substrate and appear as a substrate current.
This effect is known as impact ionization.

.2. Draw the CMOS inverter DC transfer and operating region?

p ON n 'OFF"
p "OFF" n "ON'
p ON" n "ON"

(pri

'

VDD 4'

= Idsp

Vt 5V

tn

DD

yin

V +V
DO 1p

VDD