Tugas TRK no P5-13b

Oleh Ilham Maulana 1406531914

P5-13B. Microelectronic devices are formed by first forming SiO2 on a silicon wafer by chemical
vapour deposition (Figure P5-113b). this procedure is followed by coating the SiO 2 with a
polymer called a photoresist. The pattern of the electronic circuit is then placed on the polymer
and the sample is irradiated with ultraviolet light. If the polymer is a positive photoresist, the
sections that were irradiated will dissolve in the appropriate the solvent, and those sections not
irradiated will protect the SiO2 from further treatment. The wafer is then exposed to strong acid,
such as HF, with etch (i.e.., dissolve) the exposed SiO2. It is extremely important to know the
kinetics of the reaction so the proper