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Technical Data Sheet
Photocoupler
EL817 Series
Features:
Current transfer ratio
(CTR:MIN.50% at IF =5mA ,VCE =5V)
High isolation voltage between input
and output (Viso=5000 V rms )
Compact dual-in-line package
EL817*:1-channel type
Pb free
Description
The EL817 series contains a infrared emitting diode optically
coupled to a phototransistor. It is packaged in a 4-pin DIP package
and available in wide-lead spacing and SMD option.
Applications
Computer terminals
System appliances, measuring instruments
Registers, copiers, automatic vending machines
Cassette type recorder
Electric home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials
and impedances
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2.2
Page: 1 of 11
Device NoDPC-817-001
Prepared date06-03-2004
Rank mark*1
Factory identification mark*2
Year code*3
Week code*4
Anode mark
E L 8 1 7
EVERLIGHT
http:\\www.everlight.com
Rev 2.2
Page: 2 of 11
Device NoDPC-817-001
Prepared date06-03-2004
S Type
E L 8 1 7
EVERLIGHT
Notes:
1. Rank shall be or shall not be marked
2. Factory code shall be marked (T: Taiwan / C: China)
3. Year date code
4. 2-digit work week
5. All dimensions are in millimeters
6. Specifications are subject to change without notice
http:\\www.everlight.com
Rev 2.2
Page: 3 of 11
Device NoDPC-817-001
Prepared date06-03-2004
( Ta=25C )
Parameter
Symbol
Rating
Unit
Forward Current
IF
50
mA
Reverse Voltage
VR
Power Dissipation
70
mW
PC
150
mW
Collector Current
IC
50
mA
Collector-Emitter Voltage
VCEO
35
Emitter-Collector Voltage
VECO
Ptot
200
mW
Isolation Voltage
Viso
5000
V rms
Operating Temperature
Topr
-55~+110
Storage Temperature
Tstg
-55~+125
Soldering Temperature
Tsol
260
Input
Output
*1
)
)
)
)
*2
For 10 seconds
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Rev 2.2
Page: 4 of 11
Device NoDPC-817-001
Prepared date06-03-2004
Input
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward
VF
1.2
1.4
IF=20mA
Reverse
Current
IR
10
uA
VR=4V
Terminal
Ct
30
250
pF
V=0,f=1kHz
ICEO
100
nA
VCE=20V
BVCEO
35
Ic=0.1mA
CTR
50
600
IF=5mA ,VCE=5V
CollectorEmitter
saturation
voltage
VCE(sat)
0.1
0.2
IF=20mA ,Ic=1 mA
Isolation
resistance
RISO
1011
DC500V,40~60%R.H
V=0, f=1MHz
Collector
Dark current
Output
CollectorEmitter
breakdown
voltage
Current
Transfer
ratio
Transfer
Characteristics
(Ta=25C)
51010
Floation
capacitance
Cf
0.6
1.0
pF
Cut-off
frequency
fc
80
kHz
Rise time
tr
18
us
VCE=5V, IC=2 mA
RL=100, -3dB
VCE=2V
IC=2mA,RL=100
Fall time
tf
18
us
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Rev 2.2
Page: 5 of 11
Device NoDPC-817-001
Prepared date06-03-2004
Rank mark
EL817* note 1
CTR (%)
Condition
50 to 600
50 to 100
EL817* (A)
80 to 160
EL817* (B)
130 to 260
EL817* (C)
200 to 400
EL817* (D)
300 to 600
EL817* (AB)
A or B
80 to 260
EL817* (BC)
B or C
130 to 400
EL817* (CD)
C or D
200 to 600
IF = 5 mA
VCE = 5 V
Ta = 25C
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Rev 2.2
Page: 6 of 11
Device NoDPC-817-001
Prepared date06-03-2004
Ic =0.5mA
1.0mA
3.0mA
5.0mA
7.0mA
(Ta=25C)
30mA
20mA
10mA
5mA
IF =5mA
VCE=5V
IF=20mA
Ic=1mA
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Rev 2.2
Page: 7 of 11
Device NoDPC-817-001
Prepared date06-03-2004
VCE=2V
IC=2mA
Ta=25C
tr
tf
VCE=20V
td
ts
100
1K
RL=10K
Vcc
50
100
Output
Input
Input
10%
Output
VCE=2V
IC=2mA
Ta=25C
90%
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Rev 2.2
Page: 8 of 11
Device NoDPC-817-001
Prepared date06-03-2004
Endurance
Test Item
Ta = 25
Operation Life *
3C
(Acc.)
Failure
Reference
Sample
Criteria
Standard
0 / 22
MIL-S-750 : 1026
MIL-S-883 : 1005
IR: If = 50 mA
test
1000
CTR shift > 1.2
hrs
High Temperature / High
Ta = 85 3C , Humi. = 85 % rh
(H3TRB)
hrs
High Temperature
Ta = 105 3C
0 / 22
Vf > U* 1.0
Ir > U * 1.0
Vce(sat) >U*1.0
Bvceo < L*1.0
0 / 22
Reverse Bias
(HTRB)
1000 hrs
0 / 22
Ta = 125 3C ,
1000 hrs
0 / 22
High Temperature
P = 15 PSIG , Ta = 121 C ,
Humi. = 100 % rh ,
Environmental
Temperature Cycling
Test
(Air to Air)
125C
30
~
~
30
125
(Liquid to Liquid)
t (dwell) = 5 min
U : Up Spec.
, 100 cycles
JESD 22-A102-B
MIL-S-883 :1010
MIL-S-202 : 107D
MIL-S-750 : 1051
MIL-S-883 :1011
100 cycles
Ta = 260 3C
0 / 22
t (dwell) = 10 1 sec
Solder Ability
MIL-S-883 : 1008
- 55C
Limit
0 / 22
min
t (trans.) = 10 sec
0 / 22
48 hrs
- 55 C
Thermal Shock
Solder Resistance
L :Low
Spec.Limit
Storage
Auto clave
Ta = 230 3 C
MIL-S-750 : 2031
JIS C 7021 : A-1
0 / 22
t (dwell) = 5 1 sec
MIL-S-883 : 2003
JIS C 7021 : A-2
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Rev 2.2
Page: 9 of 11
Device NoDPC-817-001
Prepared date06-03-2004
2.Inner Carton
EL817
3.Outside Carton
Label
Packing Quantity
1. 100 Pcs/ Per Tube
2. 25 Tubes / Inner Carton
3. 12 Inner Cartons / Outside Carton
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2.2
Page: 10 of 11
Device NoDPC-817-001
Prepared date06-03-2004
TA
TB
2. Inner Carton
EL817
3. Outside Carton
Label
Packing Quantity
1.
2.
3.
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Rev 2.2
Page: 11 of 11
Device NoDPC-817-001
Prepared date06-03-2004