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Current Equations For Mosfets in Saturation: V V C L W Id
Current Equations For Mosfets in Saturation: V V C L W Id
MOSFETs are in saturation when they are being used in analog devices and when a
digital device is switching.
The source-drain current, ID is described by the following equations
For PMOS devices
W p C ox
V sg VTP 2
L
2
This is sometimes written in the following two forms
ID
ID
W
2
2
k p ' Vsg VTP K p ' Vsg VTP
L
Also
ID
Vsg
W
2 k p ' Vsg VTP
L
W
2
k p ' ID
L
gm
ID
Vsg
W
2
ID
k p ' Vsg VTP
L
W
ID
k p ' Vsg VTP
L
gm
sg
W n C ox
2
V gs VTN
L
2
this is sometimes written in the following two forms
ID
ID
W
2
2
k n ' V gs VTN K n ' V gs VTN
L
Also
gm
2
ID
Vsg
W
k n ' ID
L
VTP
ID
W
kp'
L
Source
Gate
Drain
Drain
Drain overlap
(XL or LD)
Gate
Source
L
Gate length (channel length) = L
Effective Gate length = L-LD
Cgd
G (gate)
Cgs
Cs
D (drain)
ro
gmVgs
S (source)
Cd
description
Gate width of either NMOS or PMOS
Gate Length for either NMOS or PMOS
Design parameter for scalable rules
Smallest possible PMOS or NMOS device
Gate capacitance per unit area
value
.35 microns
W = 3 m
L = 2 m
~2.5 fF/um2
description
Effective mobility of holes
------PMOS Threshold Voltage
Source/drain Side wall capacitance (F/m)
Source/drain bottom plate capacitance Units
(F/m2)
Source/drain Side wall capacitance on drain
side Units (F/m)
Drain overlap capacitance (F/m)
value
Description
Effective mobility of electrons
------NMOS Threshold Voltage
Source/drain Side wall capacitance: (F/m)
Source/drain bottom plate capacitance Units
(F/m2)
Source/drain Side wall capacitance on drain
side: Units (F/m)
Drain overlap capacitance (F/m)
value
446.9 cm2/V-sec
Cgs[i]
Cox W L[ii]
Cox W L
i
ii
iii
For small devices one has to also consider add in the fringe capacitance = Cfringe (W)
Many use Cgs = 2/3 Cox W L for saturation. This is more conservative.
What this is is: Cj (area of the source or drain) + Cjsw (perimeter of source or drain). For the diagram above
this would be Cj (W 4) + Cjsw 2 (W+4). Cjsw is called side wall capacitance and Cj is bottom plate
capacitance.