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Irfp260n PDF
Irfp260n PDF
IRFP260N
HEXFET Power MOSFET
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VDSS = 200V
RDS(on) = 0.04
ID = 50A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Max.
Units
50
35
200
300
2.0
20
560
50
30
10
-55 to +175
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RCS
RJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.24
0.50
40
C/W
1
10/08/04
IRFP260N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
200
2.0
27
Typ.
0.26
17
60
55
48
IDSS
LD
5.0
LS
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4057
603
161
V(BR)DSS
V(BR)DSS/TJ
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.04
S
VDS = 50V, ID = 28A
25
VDS = 200V, VGS = 0V
A
250
VDS = 160V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
234
ID = 28A
38
nC
VDS = 160V
110
VGS = 10V
VDD = 100V
ID = 28A
ns
RG = 1.8
VGS = 10V
D
Between lead,
6mm (0.25in.)
nH
G
from package
VGS = 0V
pF
VDS = 25V
= 1.0MHz
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
D
MOSFET symbol
50
showing the
A
G
integral reverse
200
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 28A, VGS = 0V
268 402
ns
TJ = 25C, IF = 28A
1.9 2.8
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
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IRFP260N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
TOP
100
10
4.5V
1
0.1
0.1
10
4.5V
10
100
1000
100
TJ = 175 C
TJ = 25 C
V DS = 50V
20s PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
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10
100
1
4.0
10
0.1
0.1
3.5
ID = 50A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( C)
IRFP260N
7000
6000
16
C, Capacitance(pF)
8000
Ciss
5000
4000
Coss
3000
2000
Crss
1000
0
V DS= 160V
V DS= 100V
V DS= 40V
12
0
1
10
100
ID = 28A
1000
50
100
150
200
1000
100
TJ = 175 C
10
TJ = 25 C
1
0.1
0.2
100us
10
1ms
TC = 25 C
TJ = 175 C
Single Pulse
V GS = 0 V
0.6
1.0
1.4
1.8
10us
100
2.2
10ms
10
100
1000
IRFP260N
RD
VDS
50
50
VGS
D.U.T.
RG
40
40
+
V
DD
10V
30
30
Pulse Width 1 s
Duty Factor 0.1 %
20
20
VDS
10
10
90%
0
25
25
50
75
100
125
150
50 T 75
125
C)
, Case100
Temperature
(150
175
175
TC , Case Temperature ( C)
10%
VGS
td(on)
tr
t d(off)
tf
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
IRFP260N
1500
15V
VDS
DRIVER
TOP
BOTTOM
ID
11A
20A
28A
1000
D.U.T
RG
+
V
- DD
IAS
20V
0.01
tp
500
25
50
75
100
125
150
175
50K
QG
12V
.2F
.3F
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
ID
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IRFP260N
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
IRFP260N
TO-247AC Package Outline
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
56
ASSEMBLY
LOT CODE
035H
57
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/