2SK3899

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3899 is N-channel MOS Field Effect Transistor

designed for high current switching applications.
PART NUMBER
PACKAGE
2SK3899-ZK
TO-263 (MP-25ZK)
FEATURES
Super low on-state resistance
(TO-263)
RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 42 A)

RDS(on)2 = 6.5 m MAX. (VGS = 4.5 V, ID = 42 A)
Low C iss: C iss = 5500 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
20
Drain Current (DC) (TC = 25C)
ID(DC)
84
ID(pulse)
336
Total Power Dissipation (TC = 25C)
PT1
146
Total Power Dissipation (TA = 25C)
PT2
1.5
Channel Temperature
Tch
150
Tstg
55 to +150
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Energy
Note2
EAS
245
mJ
Repetitive Avalanche Current
Note3
IAR
49.5
Repetitive Avalanche Energy
Note3
EAR
245
mJ
Notes 1. PW 10 s, Duty Cycle 1%

2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H
3. RG = 25 , Tch(peak) 150C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
2SK3899
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
Gate Leakage Current
IGSS
VGS = 20 V, VDS = 0 V
10
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
| yfs |
VDS = 10 V, ID = 42 A
35
70
RDS(on)1
VGS = 10 V, ID = 42 A
4.2
5.3
RDS(on)2
VGS = 4.5 V, ID = 42 A
4.9
6.5
Gate Cut-off Voltage

Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Input Capacitance
Ciss
VDS = 10 V
5500
pF
Output Capacitance
Coss
VGS = 0 V
1050
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
350
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
19
ns
VGS = 10 V
13
ns
RG = 0
91
ns
10
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
96
nC
Gate to Source Charge
QGS
VGS = 10 V
18
nC
QGD
ID = 84 A
23.5
nC
VF(S-D)
IF = 84 A, VGS = 0 V
0.92
Reverse Recovery Time
trr
IF = 84 A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/s
70
nC
Gate to Drain Charge

Body Diode Forward Voltage
Note
1.5
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
D.U.T.
L
50
PG.
VGS = 20 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
= 1 s
Duty Cycle 1%
TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA
PG.
50
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D17174EJ1V0DS
td(on)
ton
tf
toff
2SK3899
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
200
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA
100
80
60
40
20
160
120
80
40
0
0
0
25
50
75
100
125
150
175
TC - Case Temperature - C
25
50
75
100
125
150
175
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA

RDS(on) Limited
(at VGS = 10 V)
ID(pulse) = 336 A
100 s
100
1 ms
ID(DC) = 84 A
10 ms
10
Power Dissipation Limited
0.1
TC = 25C
Single pulse
0.1
10
100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance -
ID - Drain Current - A
1000
1000
Single pulse
100
Rth(ch-A) = 83.3C/W
10
Rth(ch-C) = 0.86C/W
0.1
0.01
100
1m
10 m
100 m
10
100
1000
PW - Pulse Width - s
2SK3899
DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS

1000
V GS = 10 V
300
400
4.5 V
200
100
100
Tch = 55C
25C
75C
150C
10
1
0.1
0.01
VDS = 10 V
Pulsed
Pulsed
0.001
0
0
2.5
2
1.5
1
0.5
0
-25
25
75
125
175
| yfs | - Forward Transfer Admittance - S
1000
VDS = 10 V
ID = 1 mA
-75
Tch = 55C
25C
75C
150C
100
10
1
VDS = 10 V
Pulsed
0.1
0.1
12
Pulsed
10
8
VGS = 4.5 V
4
10 V
2
0
1
10
100
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m

DRAIN CURRENT
10
Tch - Channel Temperature - C
FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
20
ID = 42 A
Pulsed
16
12
8
4
0
0
12
16
20
2SK3899
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
12
100000
Ciss, Coss, Crss - Capacitance - pF
10
8
VGS = 4.5 V
6
10 V
4
2
ID = 42 A
Pulsed
-25
25
75
125
C iss
C oss
1000
C rss
100
10
0.1
175
td(off)
td(on)
tr
10
tf
VDD = 30 V
VGS(on) = 10 V
RG = 0
1
1
12
VDD = 48V
30V
12V
50
ID = 84 A
10
40
30
VGS
20
10
10
100
6
4
2
VDS
0
0
20
40
60
80
100
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE

FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
1000
100
VGS = 10 V
10
0V
1
0.1
100
10
di/dt = 100 A/s

VGS = 0 V
Pulsed
0.01
0.0
100
60
0.1
IF - Diode Forward Current - A
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
Tch - Channel Temperature - C
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
0
-75
VGS = 0 V
f = 1 MHz
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
0.1
10
100
IF - Diode Forward Current - A

CHANNEL TEMPERATURE
2SK3899
SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY

DERATING FACTOR
100
100
Energy Derating Factor - %
IAS - Single Avalanche Current - A
1000
IAS = 49.5 A
EAS = 245 mJ
10
VDD = 30 V
RG = 25
VGS = 20 0 V
Starting Tch = 25C
80
60
40
20
1
0.01
0
0.1
10
L - Inductive Load - mH
VDD = 30 V
RG = 25
VGS = 20 0 V
IAS 49.5 A
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
2SK3899
PACKAGE DRAWING (Unit: mm)
4.450.2
1.30.2
0.025 to
0.25
0.5
0.750.2
0.2
0 to
2.54
2.540.25
9.150.3
8.0 TYP.
7.88 MIN.
4
15.250.5
10.00.3
No plating
1.350.3
TO-263 (MP-25ZK)
8o
0.25
1
3
1.Gate
2.Drain
2.5
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3899
The information in this document is current as of May, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
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redundancy, fire-containment and anti-failure features.
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M8E 02. 11-1
This datasheet has been downloaded from:

www.DatasheetCatalog.com
Datasheets for electronic components.

2SK3899

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

The 2SK3899 is N-channel MOS Field Effect Transistor

RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 42 A)

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (TC = 25C)

Total Power Dissipation (TC = 25C)

Total Power Dissipation (TA = 25C)

Drain Current (pulse)

Repetitive Avalanche Current

Repetitive Avalanche Energy

Notes 1. PW 10 s, Duty Cycle 1%

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

Drain to Source On-state Resistance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-off Delay Time

Total Gate Charge

Gate to Source Charge

Reverse Recovery Time

Reverse Recovery Charge

di/dt = 100 A/s

Gate to Drain Charge

TEST CIRCUIT 2 SWITCHING TIME

TEST CIRCUIT 3 GATE CHARGE

Data Sheet D17174EJ1V0DS

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS

FORWARD BIAS SAFE OPERATING AREA

Power Dissipation Limited

VDS - Drain to Source Voltage - V

Data Sheet D17174EJ1V0DS

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

VDS - Drain to Source Voltage - V

| yfs | - Forward Transfer Admittance - S

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

Tch - Channel Temperature - C

RDS(on) - Drain to Source On-state Resistance - m

FORWARD TRANSFER ADMITTANCE vs.

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

Data Sheet D17174EJ1V0DS

VGS - Gate to Source Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

Ciss, Coss, Crss - Capacitance - pF

VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE

REVERSE RECOVERY TIME vs.

di/dt = 100 A/s

IF - Diode Forward Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VDS - Drain to Source Voltage - V

Tch - Channel Temperature - C

VF(S-D) - Source to Drain Voltage - V

IF - Diode Forward Current - A

Data Sheet D17174EJ1V0DS

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m