Professional Documents
Culture Documents
Dr.Prasant KumarPattnaik
AssistantProfessor
DepartmentofElectrical Engineering
BITSPilani HyderabadCampus
ELECTRICAL
ELECTRONICS
COMMUNICATION
INSTRUMENTATION
Colpitts Oscillator
CT isseriescombinationofC1 andC2
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ELECTRICAL
ELECTRONICS
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INSTRUMENTATION
Colpitts Oscillator
Example:
Colpitts Oscillator circuithavingtwocapacitorsof10pFand100pFrespectively
areconnectedinparallelwithaninductorof10mH.Determinethefrequencyof
oscillationsofthecircuit.
Solution
Hencetheresonantfrequencyis
Upto fewMHzsignalscanbegeneratedusingthisoscillator
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ELECTRICAL
ELECTRONICS
COMMUNICATION
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MicrowaveSignalOscillators
SolidStateDevices
GunnDiodes
ImpactIonizationAvalancheTransitTime(IMPATT)Diodes
TrappedPlasmaAvalancheTransitTime(TRAPTT)Diodes
BarrierInjectedTransitTime(BARITT)Diodes
VacuumTubes
KlystronTubes
MagnetronTubes
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ELECTRICAL
ELECTRONICS
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INSTRUMENTATION
GunnEffect
DiscoveredbyJ.BGunnin1963
PeriodicfluctuationsofcurrentpassingthroughntypeGaAs whenapplied
voltageexceedsacertaincriticalvalue
Bulknegativeresistancepropertyofuniformsemiconductor
Inpositiveresistancethecurrentthroughandvoltageacrossitareinphase
AndhenceI2Rpowerisdropped
But
Innegativeresistance,thevoltageandcurrentare1800 outofphaseand
voltagedropisnegativeandhencepowerI2Risgenerated
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ELECTRICAL
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GunnEffect
Fieldvs CurrentDensity
NtypeGaAs
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ELECTRONICS
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INSTRUMENTATION
RWHTheoryofGunnEffect
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ELECTRICAL
ELECTRONICS
COMMUNICATION
INSTRUMENTATION
TwoValleyModel
DatafortwovalleyinGaAs
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ELECTRICAL
ELECTRONICS
COMMUNICATION
INSTRUMENTATION
TwoValleyModel
TransferredElectronDensities
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ELECTRONICS
COMMUNICATION
INSTRUMENTATION
TEDeffect
Electronsinthelowervalleyshouldhavehighmobility,smalleffective
massandLowdensityofstate&
Electronsintheuppervalleyshouldhavelowmobility,largeeffective
massandHighdensityofstate
Bottomoflowervalleyandbottomofuppervalleyshouldbelarger
thanthermalenergy
Separationbetweenthevalleysshouldbesmallerthanthebandgap
Currentdensitydecreasewithincreaseinthefieldbeyondacertain
valuegivingrisetonegativeresistance
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ModesofOperationofGunnDiode
n+
nGaAs
n+
GunnmodeorTransitTime(TT)mode
LimitedSpaceCharge(LSA)mode
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GunnMode
WhenvoltageexceedsVth electronsaretransferredfromlowenergyhighmobilityconduction
bandtoahighenergylowermobilitysubconduction band
Theheavierelectronsbunchtogethertoformanelectricfielddipoledomainnearthecathode
Electricfieldacrossthedomainisgreaterthantheaveragefield
Alltheconductionbandelectronsdriftacrossthecrystalatthesamevelocityandtheless
mobilebunchedelectronshavereducedvelocity
Thecurrentinpresenceofdomaindecreases
Afterthehighfielddomaintravelledintotheendofthecontactthecurrentreturnstothe
higherlevelandahighfielddomainisagainformed
Eachdomainresultsinapulseofcurrentandthesefluctuationsoccuratmicrowavefrequencies
withperiodequaltotransittime
Lowefficiencyofpowergenerationandcannotbecontrolledbyanyexternalcircuit
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INSTRUMENTATION
LSAmode
Gunndiodeworksasapartofresonantcircuit
Theresonantcircuitistunedtofrequencyseveraltimeslargerthan
TTmodesothatthedipoledomainsdonothavesufficienttimetoform
ThecircuitactsasanegativeresistanceoscillatorwhenV>Vth
RL ismade20%greaterthannegativeresistancetoenableoscillation
tostart
Oscillationbecomesteadywhenaveragenegativeresistance becomes
equaltoRL
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GunnOscillatorExample
Thedriftvelocityofelectronis2x107 cm/sthroughtheactiveregion
oflength10micronGaAs.Calculatethenaturalfrequencyofthediode
andthecriticalvoltage
Ans:
Naturalfrequency=driftvelocity/lengthofactiveregion
=2x105/(105)=20GHz
Criticalvoltage=lxcriticalfield
=103 x(3.2kV/cm)
=3.2V
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GunnOscillatorDisadvantages
Lowefficienciesatfrequenciesabove10GHz
Smalltuningrange
Largedependenceoffrequencyontemperature
HighNoise
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AvalancheTransitTimeDevices
pnjunctionswithheavilydopedpandnregions
Underreversebiastheyproducenegativeresistanceatmicrowave
Frequencybyusingcarrierimpactionizationavalanchebreakdown
Threetypes
(i) Impactionizationavalanchetransittime(IMPACTT)
effectdevices(upto 100GHz)
(ii)Trappedplasmaavalanchetriggeredtransittime(TRAPATT)
effectdevices(13GHz)
(iii)Barrierinjectedtransittime(BARITT)effectdevices
(lownoiseapplication)
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VacuumTubeTypeGenerator
ReflexKlystron
Magnetron
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COMMUNICATION
INSTRUMENTATION
Vacuumtubes
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LimitationsofVacuumtubes
Limitationsofvacuumtubesbeyond1GHzoperation
1. Interelectrodecapacitance(IEC)Effect
2.LeadInductance(LI)Effect
3.Transittime(TT)Effect
4.EffectduetoRFlosses
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LimitationsofVacuumtubes
Interelectrodecapacitance
Reactanceofgridtocathodecapacitancebecomestoosmall
reactanceXc=1/(2*f*C)
Signalisshortcircuitedinthetube
Resonantfrequencyoftunedcircuitdecreases
ThecapacitanceC=0rA/d
canbeminimizedbyreducingtheareaoftheelectrodeor
byincreasingthedistancebetweentheelectrodes
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LimitationsofVacuumtubes
LeadInductance
TheleadreactanceXL=2*f*Lincreaseswithfrequency
itisparallelwithinterelectrodecapacitance
Voltageappearingattheactiveelectrodesarelessthanvoltageatthebasepins
inductanceofcathodeiscommontobothgridandplatecircuits
Thisprovidesapathfordegenerativefeedbackresultinginreductionof
efficiency
Canbeminimised bydecreasinginductanceL=(l/0r)A
byusingshortleadswithoutbasepins
byincreasingAanddecreasingl
Butthiswillhavelesserpowerhandlingcapability
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LimitationsofVacuumtubes
Transittimeeffect
Timetakenforelectrontotravelfromcathodetoanode
=d/v0,
whered=distancebetweencathodeandanode
v0=velocityofelectrons
Underequilibrium
Staticenergyofelectron(eV)=Kineticenergy(1/2*m*v02)
Hence,=d/ 2eV/m
Atlowfrequencies, isnegligiblecomparedtoperiodofthesignalandhencethegrid
voltageandplatecurrentareinphase
Athighfrequencies, iscomparabletoperiodofthesignalandhencethegridvoltage
andplatecurrentarenotinphase,thegainbecomesacomplexquantityresulting
reducedefficiency
Tominimizetransittimeeffect,electrodeseparationcanbedecreasedorthecathode
potentialcanbeincreased
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LimitationsofVacuumtubes
EffectduetoRFlosses
Skineffectloss
Athigherfrequencies,theskindepthbecomessmallandRincreases
Canbeminimizedbyincreasingthesizeoftheconductor
Dielectricloss
Dielectriclosswhichoccurinvariousinsulatingmaterialsuchasspacers,
glassenvelopeetc.dependsonthelosstangent,
Largerfrequencieshavelargerlosses
Tominimizethisreducethesurfaceareaoftheglass
Radiationloss
Whendimensionofthewireapproachesthewavelength,itwillemit
radiationwhichincreasewithfrequency.
canbeminimizedbypropershieldingofthetubeanditscircuitry
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MicrowaveTubes
KlystronOscillator
Aklystronisavacuumtubethatcanbeused
eitherasageneratororasanamplifierof
power,atmicrowavefrequencies.
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TwocavityKlystronAmplifier
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ElectronVelocityModulation
Electronsinjectedfromcathodearrivecavitywithuniformvelocity
Electronspassingthroughthefirstcavityatzerosofthegapvoltage
(signalvoltage)Passthroughwithunchangedvelocity
Thosepassingthroughpositiveswingofthegapvoltageundergoincreasein
thevelocity
Thosepassingthroughnegativeswingofthegapvoltageundergodecreasein
thevelocity
Electronsbunchtogetherastheytraveldownthedriftspace
Thisiscalledelectronvelocitymodulation
Thedensityofelectronsvarycyclicallywithtimeandhencearesaidtobe
currentmodulated
TheKineticenergyoftheelectronsarethustransferredtothefieldof
secondcavity
Theoutputiscoupledoutofthesecondcavity
Theelectronsterminateatcollector
KlysterGermanword>Bunch
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KlystronOscillator
AKlystronamplifiercanbeconvertedtoanoscillatorbyfeeding
backpartofthecatcher outputtothebuncher inproperphase
satisfyingBarkhausen Criterion
Barkhausen Criterion
(i)LoopGain(Ab)=1
(ii)Phaseshiftiszeroorintegralmultiplesof2
A=openloopgainofamplifyingelement
b=Feedbackfactor
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ReflexKlystron
Thereflexklystronhasbeenthemostused
sourceofmicrowavepowerinlaboratory
applications.
Itsasinglecavityvariablefrequency
microwavegenerator
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ReflexKlystron
ConstructionofReflexKlystron
Areflexklystronconsistsofanelectrongun,acavitywithapair
ofgridsandarepeller plateasshowninthediagram.
Inthisklystron,asinglepairofgridsdoesthefunctionsofboth
thebuncher andthecatchergrids.
Themaindifferencebetweentwocavityreflexklystronamplifier
andreflexklystronisthattheoutputcavityisomittedinreflex
klystronandtherepeller orreflectorelectrode,placedavery
shortdistancefromthesinglecavity,replacesthecollector
electrode.
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ReflexKlystron
ReflexKlystronoscillator
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ReflexKlystron
WorkingPrinciple
Thecathodeemitselectronswhichareacceleratedforwardby
anacceleratinggridwithapositivevoltageonitandfocused
intoanarrowbeam.
Theelectronspassthroughthecavityandundergovelocity
modulation,whichproduceselectronbunchingandthebeamis
repelledbackbyarepellerplatekeptatanegativepotential
withrespecttothecathode.
Onreturn,theelectronbeamonceagainentersthesamegrids
whichactasabuncher,therbythesamepairofgridsacts
simultaneouslyasabuncherfortheforwardmovingelectron
andasacatcherforthereturningbeam.
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ReflexKlystron
WorkingPrinciple
Thefeedbacknecessaryforelectricaloscillationsisdeveloped
byreflectingtheelectronbeam,thevelocitymodulated
electronbeamdoesnotactuallyreachtherepeller plate,butis
repelledbackbythenegativevoltage.
Thepointatwhichtheelectronbeamisturnedbackcanbe
variedbyadjustingtherepeller voltage.
Thustherepeller voltageissoadjustedthatcompletebunching
oftheelectronstakesplaceatthecatchergrids,thedistance
betweentherepeller andthecavityischosensuchthatthe
repeller electronbuncheswillreachthecavityatpropertimeto
beinsynchronization.
Duetothis,theydeliverenergytothecavity,theresultisthe
oscillationatthecavityproducingmicrowavefrequency.
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ReflexKlystron
Thistubeiscalledareflexklystronbecauseelectronsperformreflexaction
repelstheinputsupply
Thereareoftenseveralregionsofreflectorvoltagewherethereflexklystron
willoscillate,thesearereferredtoasmodes
Theelectronictuningrangeofthereflexklystronisusuallyreferredtoasthe
variationinfrequencybetweenhalfpowerpointsthepointsintheoscillating
modewherethepoweroutputishalfthemaximumoutputinthemode.
Itshouldbenotedthatthefrequencyofoscillationisdependentonthe
reflector/repeller voltage
varyingthisrepeller voltageprovidesacrudemethodoffrequencymodulating
theoscillationfrequency
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ReflexKlystron
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Poweroutputandfrequencycharacteristics
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INSTRUMENTATION
ReflexKlystron
PerformanceCharacteristics
1.
2.
3.
4.
5.
Frequency: 4 200GHz
Power:1mW 2.5W
Theoreticalefficiency:22.78%
Practicalefficiency:10% 20%
Tuningrange:5GHzat2W 30GHzat10
mW
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ReflexKlystron
Applications
1. Radarreceivers
2. Localoscillatorinmicrowavereceivers
3. Signalsourceinmicrowavegeneratorof
variablefrequency
4. Portablemicrowavelinks
5. Pumposcillatorinparametricamplifier
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TravelingWaveTube(TWT)
TravelingWaveTube
TravelingWaveTube(TWT)isthemostversatile
microwaveRFpoweramplifiers.
ThemainvirtueoftheTWTisitsextremelywide
bandwidthofoperation.
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TravelingWaveTube(TWT)
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SchematicofTWT
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TravelingWaveTube(TWT)
Basicstructure
ThebasicstructureofaTWTconsistsofacathodeandfilament
heaterplusananodethatisbiasedpositivelytoacceleratethe
electronbeamforwardandtofocusitintoanarrowbeam.
Theelectronsareattractedbyapositiveplatecalledthe
collector,whichhasgivenahighdcvoltage.
Thelengthofthetubeisusuallymanywavelengthsatthe
operatingfrequency.
Surroundingthetubeareeitherpermanentmagnetsor
electromagnetsthatkeeptheelectronstightlyfocusedintoa
narrowbeam.
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TravelingWaveTube(TWT)
TheuniquefeatureoftheTWTisahelixorcoilthat
surroundsthelengthofthetubeandtheelectronbeam
passesthroughthecentreoraxisofthehelix.
Themicrowavesignaltobeamplifiedisappliedtotheendof
thehelixnearthecathodeandtheoutputistakenfromthe
endofthehelixnearthecollector.
ThepurposeofthehelixistoprovidepathforRFsignal.
ThepropagationoftheRFsignalalongthehelixismade
approximatelyequaltothevelocityoftheelectronbeam
fromthecathodetothecollector
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TravelingWaveTube(TWT)
PrincipleofOperation
Thepassageofthemicrowavesignaldownthehelixproduces
electricandmagneticfieldsthatwillinteractwiththeelectron
beam.
Theelectromagneticfieldproducedbythehelixcausesthe
electronstobespeededupandsloweddown,thisproduces
velocitymodulationofthebeamwhichproducesdensity
modulation.
Densitymodulationcausesbunchesofelectronstogroup
togetheronewavelengthapartandthesebunchofelectrons
traveldownthelengthofthetubetowardthecollector.
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TravelingWaveTube(TWT)
PrincipleofOperation(Contd)
Theelectronbunchesinducevoltagesintothehelix
whichreinforcethevoltagealreadypresentthere.Due
tothatthestrengthoftheelectromagneticfieldonthe
helixincreasesasthewavetravelsdownthetube
towardsthecollector.
Attheendofthehelix,thesignalisconsiderably
amplified.Coaxialcableorwaveguidestructuresare
usedtoextracttheenergyfromthehelix.
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TravelingWaveTube(TWT)
Advantages
1. TWThasextremelywidebandwidth.Hence,itcan
bemadetoamplifysignalsfromUHFtohundredsof
gigahertz.
2. TheTWTscanbeusedinbothcontinuousand
pulsedmodesofoperationwithpowerlevelsupto
severalthousandswatts.
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TravelingWaveTube(TWT)
PerformanceCharacteristics
1.
2.
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TravelingWaveTube(TWT)
Applications
1.
2.
3.
4.
5.
LownoiseRFamplifierinbroadbandmicrowavereceivers.
Repeateramplifierinwidebandcommunicationlinksand
longdistancetelephony.
Duetolongtubelife(50,000hoursagainstthforother
types),TWTispoweroutputtubeincommunication
satellite.
ContinuouswavehighpowerTWTsareusedin
troposcatter links(duetolargerpowerandlarger
bandwidths).
UsedinAirborneandshipbornepulsedhighpowerradars.
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Magnetron
Klystrons,TWTareOTypetubes
O refersoriginaltype(Linearbeamtubes)
Crossfieldtubeswhereelectricandmagneticfieldare
perpendiculartoeachother,TheseareMType;Magnetron
TheinteractionofelectronwithRFfieldforalongerduration
resultsinhigherefficiencydevices(e.g TWTandMagnetron)
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TypesofMagnetrons
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TypesofMagnetrons
1. Splitanodemagnetron
staticnegativeresistancebetweentwoanodesegments
2.Cyclotronfrequencymagnetron
synchronismbetweenanaccomponentofelectricfieldand
periodicoscillationofelectroninadirectionperpendiculartofield
3.Travellingwave(orcavitytype)Magnetrons
InteractionofelectronswithtravellingEMfieldoflinearvelocity
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Magnetron
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Magnetron
Construction
Each cavity in the anode acts as an inductor having only
one turn and the slot connecting the cavity and the
interaction space acts as a capacitor.
These two form a parallel resonant circuit and its resonant
frequency depends on the value of L of the cavity and the
C of the slot.
The frequency of the microwaves generated by the
magnetron oscillator depends on the frequency of the RF
oscillations existing in the resonant cavities.
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Magnetron Description
Magnetron is a cross field device as the electric field
between the anode and the cathode is radial whereas the
magnetic field produced by a permanent magnet is axial.
A high DC potential can be applied between the cathode
and anode which produces the radial electric field.
Depending on the relative strengths of the electric and
magnetic fields, the electrons emitted from the cathode
and moving towards the anode will traverse through the
interaction space
In the absence of magnetic field (B = 0), the electron travel
straight from the cathode to the anode due to the radial
electric field force acting on it.
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Magnetron
BunchingofelectronsinsideMagnetroncavity
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Magnetron
The number of bunches depends on the number of
cavities in the magnetron and the mode of oscillations, in
an eight cavity magnetron oscillating with - mode, the
electrons are bunched in four groups
Two identical resonant cavities will resonate at two
frequencies when they are coupled together; this is due to
the effect of mutual coupling.
Commonly separating the pi mode from adjacent modes is
by a method called strapping. The straps consist of either
circular or rectangular cross section connected to alternate
segments of the anode block.
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Magnetron
PerformanceCharacteristics
1. Power output: In excess of 250 kW ( Pulsed
Mode), 10 mW (UHF band), 2 mW (X band),
8 kW (at 95 GHz)
2. Frequency: 500 MHz 12 GHz
3. Duty cycle: 0.1 %
4. Efficiency: 40 % - 70 %
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Magnetron
ApplicationsofMagnetron
1. Pulsed radar is the single most important
application with large pulse powers.
2. Voltage tunable magnetrons are used in sweep
oscillators in telemetry and in missile
applications.
3. Fixed frequency, CW magnetrons are used for
industrial heating and microwave ovens.
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Conclusion
GunnDiodes
Klystrons ReflexKlystron
Magnetron
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