Taimoor Ahmad Shahzad

15003187001
TO: Dr. Yaser Danial Khan

Phase Change Material and Phase

Change Memory.
Introduction:
Phase change memory (PCM) is an emerging technology that
combines the unique properties of phase change materials with
the potential for novel memory devices, which can help lead to
new computer architectures. Phase change memory (PCM) is a
developing innovation that joins the one of a kind properties of
phase change materials with the potential for novel memory
gadgets, which can offer assistance prompt to new PC designs.
Phase change materials store data in their Amorphous and
crystalline stages, which can be reversibly exchanged by the use
of an Output voltage. This article portrays the favorable
circumstances and difficulties of PCM. The physical Properties of
stage change materials that empower information stockpiling are
discussed, and our current learning of the phase change
procedures is compressed. Different outlines of PCM devices with
their individual points of interest and joining difficulties are
displayed. As far as possible of PCM are tended to, and its
execution is contrasted with contending existing and developing
memory innovations. At last, potential new uses of phase change
devices, for example, neuromorphic computing and phase change
logic are illustrated. Novel data storing ideas have been
consistently created all through history, from phonographs to
magnetic tape, dynamic
random access memory (DRAM),
compact disks (CDs), and flash memory, just to give some
examples. In the course of the most recent four decades, silicon
innovation has empowered information storage through charge
retention on metal-oxide-silicon (MOS) capacitive structures. As

silicon devices are scaled toward (sub-) 10 nm measurements,

minute capacitors get to be distinctly flawed by basic quantum
mechanical contemplations, and the memory storage thickness
appears to level. Novel data storage ideas are a work in progress
that incorporate putting away information toward the magnetic
orientation (magnetic RAM, spin torque transfer RAM), in the
electric polarization of a ferroelectric material (ferroelectric RAM),
in the resistance of a memory device (resistive RAM, memristor,
conducting bridge RAM, carbon nanotube memory, or in the
resistance of the capacity media itself (phase change RAM . Phase
change materials store data in their undefined and crystalline
phase, which can be reversibly exchanged by the utilization of an
outside voltage.