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  • RF & Microwave Transistors Vhf-Uhf Class C Wide Band:, LJNC

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    This document provides specifications for three RF and microwave transistors - the 2N3375, 2N3632, and 2N3733. The transistors are designed for frequencies between 130 and 400 MHz and can output between 2.5 and 13.5 watts of power. They employ a multi-emitter electrode design which enables high RF current handling capability, power gain, and efficiency. Electrical characteristics including maximum ratings, static characteristics, and dynamic performance are listed for each device type.

    Original Description:

    Electronic Components.

    Original Title

    2N3733

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    This document provides specifications for three RF and microwave transistors - the 2N3375, 2N3632, and 2N3733. The transistors are designed for frequencies between 130 and 400 MHz and can output between 2.5 and 13.5 watts of power. They employ a multi-emitter electrode design which enables high RF current handling capability, power gain, and efficiency. Electrical characteristics including maximum ratings, static characteristics, and dynamic performance are listed for each device type.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    8 views2 pages

    RF & Microwave Transistors Vhf-Uhf Class C Wide Band:, LJNC

    Uploaded by

    bookreader1968
    This document provides specifications for three RF and microwave transistors - the 2N3375, 2N3632, and 2N3733. The transistors are designed for frequencies between 130 and 400 MHz and can output between 2.5 and 13.5 watts of power. They employ a multi-emitter electrode design which enables high RF current handling capability, power gain, and efficiency. Electrical characteristics including maximum ratings, static characteristics, and dynamic performance are listed for each device type.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    , LJnc.

    20 STERN AVE.
    SPRINGFIELD, NEW JERSEY 07081
    U.S.A.

    TELEPHONE: (973) 376-2922


    (212)227-6005
    FAX: (973) 376-8960

    2N3375
    2N3632/2N3733
    RF & MICROWAVE TRANSISTORS
    VHF-UHF CLASS C WIDE BAND
    130 TO 400MHz
    FREQUENCY
    28V
    VOLTAGE
    2.5TO13.5W
    POWER OUT
    HIGH POWER GAIN
    HIGH EFFICIENCY
    CLASS C TRANSISTORS
    COMMON EMITTER

    TO 60

    PIN CONNECTION
    BRANDING
    2N3373
    2N3632
    2N3733

    3W2NM7S-OI

    1 Hiliittor

    3 collector

    2 bast

    DESCRIPTION
    This line of silicon epitaxial NPN planar high frequency transistors employs a rnuW emitter electrode
    design. This feature together with a heavily diffused
    base matrix located between the individual emitters
    results In high RF current handling capability, high
    power gain, low base resistance and low output capacitance. These transistors are intended for Class
    A, B, or C amplifier, oscillator or frequency multiplier
    circuits and are specifically designed for operation
    in the VHF-UHF region.
    Device
    2N3375
    2N3632
    2N3733

    Package
    TO 60
    TO 80
    TO 60

    NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
    not.ce information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of eoino to
    press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
    Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors

    2N3375/2N3632/2N3733
    ABSOLUTE MAXIMUM RATINGS (Te., - 25C)
    Symbol
    Paramotar
    VCBO Collector to BaM Voltage
    VCEO Coeector to Emitter Voltage
    VflO EmltMrtoBaMVottagt
    Ic (mi) Contlnuoue Collector Currant
    Total Dlaatpatlon at 25'C Stud
    PO

    2N3375

    2N3632

    2N3733

    Unit

    as

    65

    65

    14

    11.6

    Junction Temperature

    200

    200

    200

    -6510150

    -65 to 150

    "C

    T|
    T,M

    Storage Temperature

    40

    40

    4.0

    4.0

    3.0

    3.0

    23.0

    23.0

    - 6S tO 150

    2N3375
    15.0

    Aihu.ci | Junction-case Thermal Rlance


    ELECTRICAL CHARACTBRISTICS

    40
    4.0

    2N3632

    2N3733

    7.6

    7-

    = 25C)

    STATIC
    Taat Condltkn*

    Symbol

    BVo lc - 0.5mA
    BVceo lc -200mA
    BV6Bo It -0.25mA
    ICEO Vca-30V
    VCf -5V
    H

    VBB-O
    IB.0
    | c .O
    U-0
    lc - 250mA

    2N3632
    2N337S
    2N3733
    Mlrt. TP Max. Uln. Typ. Max. Mln. Typ. Max.
    65
    66
    65
    40

    (I6 -0.1mA;

    40

    40

    0.25

    0.25

    0.1
    5

    10

    Unit

    (Ic)A)

    mA

    10

    DYNAMIC
    Symba
    Po
    Po
    Qc
    Op
    1C

    in

    COB

    Taat Conditions
    F 17SMHZ
    ClaeaC
    F - 400MHz
    F- 175MH>
    F - 400MHz
    F. 175MHz
    f . 400MHz

    VCc - 28V
    V CC -28V
    Vnc - 28V
    V C c-2BV
    VCR . 28V

    F.1MHZ

    V c t .30V

    2N337I
    2N3C32
    2N3733
    Mai.
    Max.
    Mln.
    Mln.
    Typ. Max.
    Typ.

    Mln.

    V ce .28V

    13.5

    TV?

    UnH
    W

    10

    W
    dB

    4.0

    OB

    46

    5.8
    48

    70
    40
    10

    20

    20

    pF

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