NEC NPN SILICON TRANSISTORS 2SD1616, 2SD1616A DESCRIPTION The 2SD1616/2SDIGIGA are designed for use in driver and ‘output stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS in milters FEATURES —_® Low Collector Saturation Voltage. SZ Ma Veeiset) = 0.15 V TYP. (@ I¢ = 1.0 A, Ip = 50 mA) ‘© High Break Down Voltage. Vceo = 50 V/60 V (25D1616/2SD1616A) ‘© High Total Power Dissipation. : Py = 0.75 W(T, = 25°C) ‘© Complementary to the NEC 2SB1116/2SB1116A PNP Transis- tor. ‘ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperatur «8510 #150°C. Junction Temperature 180°C Maximum Maximum Power Dissipation (T, = 25 °C) Total Power Dissipation ......-- 022 06seee seer - 0.75 Maximum Voltages and Currents (T, = 25 °C) 2801616/2SD1616A Vego Collector to Base Voltage . 60 V/120 V Vceo Collector to Emitter Voltage 50 V/60 V aaa onl Vego Emitter to Base Voltage cesses GOV Zeue Tec le Collector Current (DC) . 1.08 Ig Collector Current (pulse)* . 208 *PW 10 ms, Duty Cysle 50% ELECTRICAL CHARACTERISTICS (Tg = 25°C) 2801616/2SD1616A ‘SYMBOL CHARACTERISTIC MIN, _T¥P__MAX._UNIT TEST CONDITIONS: heer*? OC Curent Gain 135 600 -VoE=20V, Ig=100mA, heea** OC Current Gain a = Veen20V.Ig~ 1.08 tt Gain Bandwidth Product 100160 MHz Voe=20V, I¢= 100ma Con, Output Copactance 19 PF Veg 10V, Ie=0,f= LOMMe eso Collector Cutoff Current 100A Veg =60V/120, Ip 0 'e80 Emitter Cutoff Current 100A Veg 80, Vee"? Base 10 Emitter Voltage 600 700 mV Voge =20V, I= 50mA Vcetset)** Collector Saturation Voltage 01503 Vg = 10 A. Ig= 50mA Vpeiar)"* Base Saturation Voltage 0912 V Ig 1.0, Ig= Sma ‘on Turn-On Time 007 we /Vec 10, I¢= 100ma' tee Storage Time 0.95 ws { tp) -Ig2= toma « Fall Time 007 ws \Vaeton =-2t03 "pulsed PW S350 us, Duty Cycle 32% Classification of heer Fonk t K u Range | 195%0270 | 20010400 | 30010600 ‘Test Conditions: Vg = 2.0 V, I¢ = 100mA 418.NEC 2SD1616,2SD1616A TYPICAL CHARACTERISTICS (T, = 25 °C) TOTAL PowER DISSIPATION vs AMBIENT TEMPERATURE x 7 Fh ie Zo 3 = 6 2 ° oe) Ambient Temparsture~"¢ gottecton cunnent ve ESLLEETOR Fo EMINTER vot TAGE Fee] Vola ods 5 20 mA 7 ey i ao g b oa} O32 Ges Yee Colctor to Emitter Votage-V sagen rnocucr : Taa0v £ i. ge 3 2 5 a : zw & 3 & dbraur oosaT ar os T i I¢-Collector Current—A SAFE OPERATING AREAS. [RAISIENT THERMAL Resierance & 3 1020-80 Hoo Yoe-Caliector to Emiter Voltage—V 0G CURRENT GAIN ve Cottecton CURRENT Vor=t0v 2 A Yas ws oror-os g-Cotector Curent—A. uTPUT caraciTANce ve COLLECTOR To BASE VOLTAGE 100, = T 3 12-80-16 Vop~Collector to Base Voltage-V SOLLECTOR cunneNr vs EBLLECTOR $0 EMITTER VOLTAGE "50 sl 200 oA 150 wh, i a collector Current mA ig750 aA. oe Voe-Colletor to Emitter Voltage —V COLLECTOR AND BASE SATURA. ‘fon VouTAgE ve CaLcecTon To ig=20-ig actse, Ig Calleetor Current —A Veetsaty Collector Saturation Vottage—V Vpe(sat) B28 Satur SWITCHING TIME ve SoLtecton CURRENT asf tguSaitching Times g IgCallector Curent~A 479