Professional Documents
Culture Documents
k2698 Datasheet PDF
k2698 Datasheet PDF
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC power Converters high
voltage H-bridge motor drive PWM
Parameter
Value
Units
500
18
12.7
80
30
ID
IDM
(Note1)
VGS
EAS
(Note2)
330
mJ
EAR
(Note1)
27.7
mJ
dv/dt
(Note3)
4.5
V/ ns
PD
208
TJ,Tstg
-55~150
300
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
0.60
/W
RQJA
40
/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
K2698
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=25V,V DS=0V
10
nA
V(BR)GSS
IG=10 A,VDS=0V
30
IDSS
VDS=500V,V GS=0V
100
V(BR)DSS
ID=10 mA,VGS=0V
500
BVDSS/
0.5
V/
TJ
coefficient
ID=250A,Referenced
to 25
VGS(th)
VDS=10V,ID=1mA
RDS(ON)
VGS=10V,ID=9A
0.23
0.27
Forward Transconductance
gfs
VDS=40V,ID=9A
16
Input capacitance
Ciss
VDS=25V,
2530
3290
Crss
VGS=0V,
11
14.3
Output capacitance
Coss
f=1MHz
300
390
VDD=250V,
40
90
ton
ID=18A
150
310
tf
RG=25
95
200
110
230
42
55
12
14
Min
Type
Max
Unit
Rise time
tr
Turn-on time
Switching time
Fall time
Turn-off time
ns
(Note4,5)
toff
pF
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=18A
(Note4,5)
Symbol
Test Condition
IDR
18
IDRP
72
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
1.4
trr
IDR=18A,VGS=0V,
500
ns
Qrr
dIDR / dt =100 A / s
5.4
2/7
K2698
3/7
K2698
4/7
K2698
K2698
6/7
K2698
247 Package Dimension
TOTO-247
Unit:mm
7/7