2N1711

EPITAXIAL PLANAR NPN

DESCRIPTION
The 2N1711 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intented for use in high performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in
amplifiers where low noise is an important factor.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V CBO

Collector-Base Voltage (I E = 0)

75

V CER

Collector-Emitter Voltage (R BE 10)

Emitter-Base Voltage (I C = 0)

50

V EBO
IC
P tot

T stg
Tj

Collector Current

500

mA

Total Dissipation at T amb 25 o C

o
at T C 25 C
o
at T C 100 C
Storage Temperature

0.8
3
1.7

W
W
W

Max. Operating Junction Temperature

September 2002

-65 to 175

175

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2N1711
THERMAL DATA
R thj-case
R thj-amb

Thermal Resistance Junction-Case

Thermal Resistance Junction-Ambient

Max
Max

50
187.5

C/W
C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

10
10

nA
A

nA

I CBO

Collector Cut-off
Current (I E = 0)

V CB = 60 V
V CB = 60 V

I EBO

Emitter Cut-off Current

(I C = 0)

V EB = 5 V

Collector-Base
Breakdown Voltage
(I E = 0)

I C = 100 A

75

V (BR)CER Collector-Emitter
Breakdown Voltage
(R BE 10)

I C = 10 mA

50

V (BR)EBO

Emitter-Base
Breakdown Voltage
(I C = 0)

I E = 100 A

V CE(sat)

Collector-Emitter
Saturation Voltage

I C = 150 mA

I B = 15 mA

0.5

1.5

V BE(sat)

Base-Emitter
Saturation Voltage

I C = 150 mA

I B = 15 mA

0.95

1.3

DC Current Gain

I C = 10 A
I C = 0.1 mA
I C = 10 mA
I C = 150 mA
I C = 500 mA
I C = 10 mA
T C = -55 o C

V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V

V (BR)CBO

h FE

20
35
75
100
40

60
80
130
130
75

35

65

70

135

70

100

300

h fe

Small Signal Current

Gain

I C = 1 mA

fT

Transition Frequency

I C = 50 mA V CE = 10 V f = 20 MHz

C EBO

Emitter-Base
Capacitance

IC = 0

V EB = 0.5 V f = 1 MHz

50

80

pF

C CBO

Collector-Base
Capacitance

IE = 0

V CB = 10 V

18

25

pF

NF

Noise Figure

I C = 0.3 mA
R g = 510

3.5

dB

h ie

Input Impedance

I C = 1 mA

V CE = 5 V

f = 1 KHz

4.4

h re

Reverse Voltage Ratio

I C = 1 mA

V CE = 5 V

f = 1 KHz

7.3 x
10 -4

h oe

Output Admittance

I C = 1 mA

V CE = 5 V

f = 1 KHz

23.8

Pulsed: Pulse duration = 300 s, duty cycle 1 %

2/4

T C = 150 o C

V CE = 10 V f = 1 KHz

f = 1 MHz

V CE = 10 V
f = 1 KHz

300
MHz

2N1711

TO-39 MECHANICAL DATA

mm

inch

DIM.
MIN.
A

TYP.

MAX.

MIN.

12.7

TYP.

MAX.

0.500

0.49

0.019

6.6

0.260

8.5

0.334

9.4

0.370

5.08

0.200

1.2

0.047

0.9

0.035
45o (typ.)

P008B
3/4

2N1711

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