BTA16-600BW3G,

BTA16-800BW3G

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
Blocking Voltage to 800 V TRIACS
On-State Current Rating of 16 A RMS at 80C 16 AMPERES RMS
Uniform Gate Trigger Currents in Three Quadrants 600 thru 800 VOLTS
High Immunity to dV/dt 1500 V/ms minimum at 125C
Minimizes Snubber Networks for Protection MT2 MT1
Industry Standard TO-220AB Package G
High Commutating dI/dt 4.0 A/ms minimum at 125C
MARKING
Internally Isolated (2500 VRMS) 4
DIAGRAM
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive OffState Voltage (Note 1) VDRM, V
BTA16xBWG
(TJ = 40 to 125C, Sine Wave, VRRM TO220AB
50 to 60 Hz, Gate Open) AYWW
CASE 221A
BTA16600BW3G 600 1
2 STYLE 12
BTA16800BW3G 800 3
On-State RMS Current IT(RMS) 16 A x = 6 or 8
(Full Cycle Sine Wave, 60 Hz, TC = 80C) A = Assembly Location
Peak Non-Repetitive Surge Current ITSM 170 A Y = Year
(One Full Cycle Sine Wave, 60 Hz, WW = Work Week
TC = 25C) G = PbFree Package
Circuit Fusing Consideration (t = 8.3 ms) I2t 120 A2sec
NonRepetitive Surge Peak OffState VDSM/ VDSM/VRSM V
Voltage (TJ = 25C, t = 10ms) VRSM +100 PIN ASSIGNMENT
Peak Gate Current (TJ = 125C, t = 20ms) IGM 4.0 A 1 Main Terminal 1

Peak Gate Power PGM 20 W 2 Main Terminal 2

(Pulse Width 1.0 ms, TC = 80C) 3 Gate
Average Gate Power (TJ = 125C) PG(AV) 1.0 W 4 No Connection
Operating Junction Temperature Range TJ 40 to +125 C
Storage Temperature Range Tstg 40 to +150 C
RMS Isolation Voltage Viso 2500 V ORDERING INFORMATION
(t = 300 ms, R.H. 30%, TA = 25C)
Device Package Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended BTA16600BW3G TO220AB 50 Units / Rail
Operating Conditions is not implied. Extended exposure to stresses above the (PbFree)
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking BTA16800BW3G TO220AB 50 Units / Rail
voltages shall not be tested with a constant current source such that the (PbFree)
voltage ratings of the devices are exceeded.

*For additional information on our PbFree strategy and

soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

December, 2008 Rev. 1 BTA16600BW3/D
 BTA16600BW3G, BTA16800BW3G

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoCase (AC) RqJC 2.13 C/W
JunctiontoAmbient RqJA 60
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds TL 260 C

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25C IRRM 0.005
TJ = 125C 2.0

ON CHARACTERISTICS
Peak On-State Voltage (Note 2) VTM 1.55 V
(ITM = 22.5 A Peak)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) IGT mA

MT2(+), G(+) 2.5 50
MT2(+), G() 2.5 50
MT2(), G() 2.5 50

Holding Current IH 60 mA
(VD = 12 V, Gate Open, Initiating Current = 150 mA)
Latching Current (VD = 12 V, IG = 50 mA) IL mA
MT2(+), G(+) 70
MT2(+), G() 90
MT2(), G() 70
Gate Trigger Voltage (VD = 12 V, RL = 30 W) VGT V
MT2(+), G(+) 0.5 1.7
MT2(+), G() 0.5 1.1
MT2(), G() 0.5 1.1

Gate NonTrigger Voltage (TJ = 125C) VGD V

MT2(+), G(+) 0.2
MT2(+), G() 0.2
MT2(), G() 0.2
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10. (dI/dt)c 4.0 A/ms
(Gate Open, TJ = 125C, No Snubber)
Critical Rate of Rise of OnState Current dI/dt 50 A/ms
(TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off-State Voltage dV/dt 1500 V/ms
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

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 BTA16600BW3G, BTA16800BW3G

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II () IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT + IGT

() MT2 () MT2

Quadrant III () IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With inphase signals (using standard AC lines) quadrants I and III are used.

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 BTA16600BW3G, BTA16800BW3G

125 20 DC
180
120 18

PAV, AVERAGE POWER (WATTS)

120
TC, CASE TEMPERATURE (C)

115 16
= 30 and 60 90
14
110 60
= 90 12
105
= 180 = 120 10
100 = 30
8
95
DC 6
90 4
85 2
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (A) IT(RMS), ON-STATE CURRENT (A)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1000 1

Typical @ TJ = 25C

0.1
Typical @
TJ = 40C
100

Typical @ TJ = 125C
I T, INSTANTANEOUS ONSTATE CURRENT (AMP)

0.01
0.1 1 10 100 1000 1104
t, TIME (ms)

Figure 4. Thermal Response

10

55
50
Typical @ MT2 Positive
45
IH, HOLD CURRENT (mA)

TJ = 40C
1 40
35
Typical @ TJ = 25C
30
25
20 MT2 Negative
Typical @ TJ = 125C
15
10
0.1 5
0.5 1 1.5 2 2.5 3 40 25 10 5 20 35 50 65 80 95 110 125
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. On-State Characteristics Figure 5. THold
Typical @ Current Variation
= 40C
J

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 BTA16600BW3G, BTA16800BW3G

100 1.8
VD = 12 V VD = 12 V
IGT, GATE TRIGGER VOLTAGE (mA)

RL = 30 W 1.6 RL = 30 W
Q1
Q3 1.4

1.2
10
Q2 1
Q1 Q3
0.8
Q2
0.6

1 0.4
40 25 10 5 20 35 50 65 80 95 110 125 40 25 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ s)

5000
VD = 800 Vpk
TJ = 125C
4K

3K

2K

1K

0
10 100 1000 10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL -
CHARGE 200 V
+
MT2
1N914 51 W
NONPOLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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 BTA16600BW3G, BTA16800BW3G

PACKAGE DIMENSIONS

TO220
CASE 221A07
ISSUE O

NOTES:
SEATING
T PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T
S ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
H F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
K H 0.110 0.155 2.80 3.93
Z J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
G T
U
0.235
0.000
0.255
0.050
5.97
0.00
6.47
1.27
D V 0.045 --- 1.15 ---
N Z --- 0.080 --- 2.04

STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED

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