C2073

NPN Epitaxial Silicon Transistor

TO-220

TV VERTICAL DEFLECTION OUTPUT

Complement to A940
Collector-Emitter Voltage: VCEO=150V
Collector Dissipation: PC(max)=25W

Absolute Maximum Ratings (TA=25oC)

Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Dissipation PC 25 W
o
Junction Temperature TJ 150 C
Storage Temperature TSTG -55~+150
o
C 1. Base 2. Collector 3. Emitter

Electrical Characteristics (TA=25oC)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage BVCBO IC=500A, IE=0 150 V

Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 150 V

Emitter-base Breakdown Voltage BVEBO IC=500A, IE=0 5 V

Collector Cut-off Current ICBO VCB=120V, IE=0 10 A

DC Current Gain hFE VCE=10V, IC=0.5A 40 75 140

Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IC=0.5A 1 V

Output Capacitance COB VCB=10V, IE=0, f=1MHz 50 pF

Current Gain Bandwidth Product fT VCE=10V, IC=0.5A 4 MHz

Elite Enterprises (H.K.) Co., Ltd. Part No.: C2073

Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Page: 1 / 1