6.

012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-1

Lecture 11 - MOSFET (III)

MOSFET Equivalent Circuit Models

October 18, 2005

Contents:

1. Low-frequency small-signal equivalent circuit model

2. High-frequency small-signal equivalent circuit model

Reading assignment:

Howe and Sodini, Ch. 4, 4.5-4.6

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-2

Key questions

What is the topology of a small-signal equivalent cir-

cuit model of the MOSFET?
What are the key dependencies of the leading model
elements in saturation?
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-3

1. Low-frequency small-signal equivalent cir-

cuit model

Regimes of operation of MOSFET:

VDSsat=VGS-VT
ID
linear saturation
ID

VDS VGS

VGS VBS
VGS=VT
0
0 VDS
cutoff
Cut-off:
ID = 0
Linear:
W VDS
ID = nCox (VGS VT )VDS
L 2
Saturation:
W
ID = IDsat = nCox (VGS VT )2 [1+(VDS VDSsat)]
2L
Effect of back bias:
r r
VT (VBS ) = VT o + ( 2p VBS 2p )
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-4

Small-signal device modeling

In many applications, interested in response of device to

a small-signal applied on top of bias:

ID+id
+
v
- ds

+ VDS
vgs + v
- - bs
VGS VBS

Key points:

Small-signal is small
response of non-linear components becomes linear
Can separate response of MOSFET to bias and small
signal.
Since response is linear, superposition can be used
effects of different small signals are independent
from each other
 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-5

MOSFET
small-signal
equivalent
circuit model
ID+id ID id
+ +
v v
- ds - ds

+ VDS = VDS +
vgs + +
v vgs + v
- - bs - - bs
VGS VBS VGS VBS

Mathematically:

iD (VGS + vgs, VDS + vds, VBS + vbs) '

ID ID ID
ID (VGS , VDS , VBS )+ | vgs + | vds + | vbs
VGS Q VDS Q VBS Q
where Q bias point (VGS , VDS , VBS )

Small-signal id:
id ' gm vgs + govds + gmb vbs
Define:
gm transconductance [S]
go output or drain conductance [S]
gmb backgate transconductance [S]

Then:
ID ID ID
gm ' |Q go ' |Q gmb ' |Q
VGS VDS VBS
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-6

2 Transconductance

In saturation regime:

W
ID = nCox (VGS VT )2 [1 + (VDS VDSsat)]
2L

Then (neglecting channel length modulation):

ID W
gm = | ' nCox (VGS VT )
VGS Q L

Rewrite in terms of ID :
v
u
u
u
u
W
gm = 2 t nCox ID
L

gm gm

saturation

saturation

cut-off
0 0
0 VT VGS 0 ID
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-7

Transconductance of 3 m nMOSFET (VDS = 2 V ):

Equivalent circuit model representation of gm :

id
G D
+

vgs gmvgs
-
S

B
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-8

2 Output conductance

In saturation regime:

W
ID = nCox (VGS VT )2 [1 + (VDS VDSsat)]
2L

Then:

ID W ID
go = |Q = nCox (VGS VT )2 ' ID
VDS 2L L

Output resistance is inverse of output conductance:

1 L
ro =
go ID

go go

saturation
saturation

cut-off
0 0
0 VT VGS 0 ID
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-9

Output conductance of 3 m nMOSFET:

Equivalent circuit model representation of go :

id
G D
+

vgs ro
-
S

B
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-10

2 Backgate transconductance

In saturation regime (neglect channel-length modulation):

W
ID ' nCox (VGS VT )2
2L
Then:
ID W VT
gmb = | = nCox (VGS VT )( | )
VBS Q L VBS Q

Since:
r r
VT (VBS ) = VT o + ( 2p VBS 2p )

Then:
VT
| = r
VBS Q 2 2p VBS

All together:
gm
gmb = r
2 2p VBS

gmb inherits all dependencies of gm

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-11

Body of MOSFET is a true gate: output characteristics

for different values of VBS (VBS = 0 (3) V, VBS =
0.5 V , VGS = 2 V ):

Equivalent circuit model representation of gmb :

id
G D
+

vgs gmbvbs
-
S
-
vbs
+
B
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-12

Complete MOSFET small-signal equivalent circuit model

for low frequency:

id
G D
+

vgs gmvgs gmbvbs ro

-
S
-
vbs
+
B
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-13

2. High-frequency small-signal equivalent cir-

cuit model

Need to add capacitances. In saturation:

Cfringe gate
Cfringe
source n+ drain
Cgs,i

n+ Cov Cov n+
Cjsw Csb,i Cjsw
Cj Cj
p
body

Cgs intrinsic gate capacitance

+ overlap capacitance, Cov (+fringe)

Cgd overlap capacitance, Cov

(+fringe)

Cgb (only parasitic capacitance)

Csb source junction depletion capacitance

+sidewall (+channel-substrate capacitance)

Cdb drain junction depletion capacitance

+sidewall
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-14

Complete MOSFET high-frequency small-signal equiva-

lent circuit model:

Cgd id
G D
+

vgs Cgs gmvgs gmbvbs ro

-
S
-
vbs Csb
+
B
Cdb

Plan for development of capacitance model:

Start with Cgs,i

compute gate charge QG = (QN + QB )
compute how QG changes with VGS
Add pn junction capacitances
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-15

Inversion layer charge in saturation

Z
L Z
VGS VT dy
QN (VGS ) = W 0 Qn (y)dy =W 0 Qn(Vc ) dVc
dVc

But:

dVc ID
=
dy W nQn(Vc )

Then:

W 2Ln Z VGS VT 2
QN (VGS ) = 0 Qn(Vc )dVc
ID

Remember:

Qn(Vc ) = Cox (VGS Vc VT )

Then:

W 2Ln Cox
2 Z
VGS VT 2
QN (VGS ) = 0 (V GS V c V T ) dVc
ID
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-16

Do integral, substitute ID in saturation and get:

2
QN (VGS ) = W LCox (VGS VT )
3

Gate charge:

QG(VGS ) = QN (VGS ) QB,max

Intrinsic gate-to-source capacitance:

dQG 2
Cgs,i = = W LCox
dVGS 3

Must add overlap capacitance:

2
Cgs = W LCox + W Cov
3

Gate-to-drain capacitance - only overlap capacitance:

Cgd = W Cov
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-17

polysilicon gate
body source drain
gate

n+

p+ n+ n+

inversion layer gate oxide

n
channel

gate length

gate width
p+ p n+ n+ n+

n+ STI edge

Body-to-source capacitance = source junction capacitance:

v
u
u
u
u
qsNa
Csb = Cj +Cjsw = W L diff u
t +(2Ldiff +W )CJ SW
2(B VBS )

Body-to-drain capacitance = drain junction capacitance:

v
u
u
u
u
qs Na
Cdb = Cj +Cjsw = W L diff u
t +(2Ldiff +W )CJ SW
2(B VBD )
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-18

Key conclusions

High-frequency small-signal equivalent circuit model of

MOSFET:

Cgd id
G D
+

vgs Cgs gmvgs gmbvbs ro

-
S
-
vbs Csb
+
B
Cdb

In saturation:
v
u
u
W u
u
gm ID t
L

ID
go
L

Cgs W LCox