PD - 94006A

IRF640N
IRF640NS
l Advanced Process Technology
IRF640NL
l Dynamic dv/dt Rating HEXFET Power MOSFET
l 175C Operating Temperature
D
l Fast Switching VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
RDS(on) = 0.15
l Simple Drive Requirements G
Description
Fifth Generation HEXFET Power MOSFETs from ID = 18A
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- TO-220AB D2Pak TO-262
resistance in any existing surface mount package. The IRF640N IRF640NS IRF640NL
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current 72
PD @TC = 25C Power Dissipation 150 W
Linear Derating Factor 1.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 247 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
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IRF640N/S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.15 VGS = 10V, ID = 11A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 6.8 S VDS = 50V, ID = 11A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 67 ID = 11A
Qgs Gate-to-Source Charge 11 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 33 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 10 VDD = 100V
tr Rise Time 19 ID = 11A
ns
td(off) Turn-Off Delay Time 23 RG = 2.5
tf Fall Time 5.5 RD = 9.0, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 1160 VGS = 0V

Coss Output Capacitance 185 VDS = 25V
Crss Reverse Transfer Capacitance 53 pF = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
18
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

72
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 11A, VGS = 0V

trr Reverse Recovery Time 167 251 ns TJ = 25C, IF = 11A
Qrr Reverse Recovery Charge 929 1394 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.0
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
RJA Junction-to-Ambient (PCB mount) 40

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 IRF640N/S/L
100 100 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
10 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10

4.5V
1
4.5V

1
0.1

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25 C TJ = 175 C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.5
RDS(on) , Drain-to-Source On Resistance

ID = 18A
I D , Drain-to-Source Current (A)

3.0
TJ = 175 C
2.5
10
(Normalized)

2.0

TJ = 25 C 1.5

1
1.0

0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF640N/S/L
2500 20
VGS = 0V, f = 1 MHZ ID = 11A V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED

VGS , Gate-to-Source Voltage (V)

V DS= 100V
Crss = Cgd V DS= 40V
2000 16
Coss = Cds + Cgd
C, Capacitance(pF)

1500 12
Ciss

1000 8

Coss
500 4
Crss

0 0
0 20 40 60 80
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
ID , Drain Current (A)

TJ = 175 C
10 10us

100us
10
TJ = 25 C
1ms
1
10ms
1

TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRF640N/S/L
RD
20 V DS
20
VGS
D.U.T.
16 RG
16 V
+
DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
12
12 Pulse Width 1 s
Duty Factor 0.1 %

8
8 Fig 10a. Switching Time Test Circuit

VDS
4 90%
4

0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
C) 175 10%
TC C
, Case Temperature ( C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response(Z thJC )

D = 0.50

0.20
PDM
0.10
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF640N/S/L

EAS , Single Pulse Avalanche Energy (mJ)

600
15V
ID
TOP 4.4A
500 7.6A
BOTTOM 11A
L DRIVER
VDS
400

RG D.U.T +
- VDD 300
IAS A
20V
tp 0.01
200
Fig 12a. Unclamped Inductive Test Circuit
100
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF640N/S/L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET Power MOSFETs

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IRF640N/S/L

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET
1 - GATE
IGBTs, CoPACK
1 2 3 2 - DRAIN
1- GATE 1- GATE
2- DRAIN
3 - SOURCE 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010

L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" RE CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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 IRF640N/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF 530S WITH PART NUMBER
LOT CODE 8024 INTE RNATIONAL
AS S EMBLED ON WW 02, 2000 RECT IFIER F 530S
IN THE AS S EMBLY LINE "L" LOGO
DAT E CODE
Note: "P" in ass embly line YEAR 0 = 2000
pos ition indicates "Lead-Free" AS S EMBLY
LOT CODE WEEK 02
LINE L

OR
PART NUMBE R
INT ERNAT IONAL
RE CT IF IE R F530S
LOGO
DAT E CODE
P = DE SIGNAT E S LEAD-FREE
AS SE MBLY PRODUCT (OPT IONAL)
LOT CODE YE AR 0 = 2000
WEE K 02
A = AS SE MBLY S IT E CODE

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IRF640N/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNAT IONAL
AS SEMBLED ON WW 19, 1997
RECT IFIER
IN T HE AS SEMBLY LINE "C" LOGO
Note: "P" in as s embly line DAT E CODE
pos ition indicates "Lead-Free" YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
DAT E CODE
P = DES IGNAT ES LEAD-FREE
AS SEMBLY PRODUCT (OPT IONAL)
LOT CODE YEAR 7 = 1997
WEEK 19
A = ASS EMBLY SIT E CODE

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 IRF640N/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
Notes: 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature.
Starting TJ = 25C, L = 4.2mH This is only applied to TO-220AB package
RG = 25, IAS = 11A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 11A, di/dt 344A/s, VDD V(BR)DSS,
TJ 175C
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] (IRF640N)
& industrial market (IRF640NS/L).
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/