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DB3 /DB4 / DC34: Trigger Diodes
DB3 /DB4 / DC34: Trigger Diodes
TRIGGER DIODES
FEATURES
VBO : 32V / 34V / 40V VERSIONS
LOW BREAKOVER CURRENT
DESCRIPTION
DO 35
High reliability glass passivation insuring (Glass)
parameter stability and protection against
junction contamination.
THERMAL RESISTANCES
10 k 500 k D.U.T
220 V
+ IF 50 Hz VO R = 20
0.1 F
10mA
IBO
IB
DIAGRAM 3 : Test circuit see diagram 2.
-V + V
0,5 VBO
Adjust R for lp=0.5A
V
lp
VBO 90 %
- IF
10 %
tr
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DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient tempera- Fig.2 : Relative variation of VBO versus junction
ture (maximum values) temperature (typical values)
P (mW) VBO[Tj]
o
160 VBO[Tj=25 C]
1.08
140
120
1.06
100
80 1.04
60
40 1.02
o
20 o Tj( C)
Tamb ( C)
o
0 1.00
0 10 20 30 40 50 60 70 80 90 100 110 120 130 25 50 75 100 125
I TRM (A)
2 F = 100 Hz
o
Tj initial = 25 C
1
0.1
tp ( s)
0.01
10 100 1000 10000
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DB3 / DB4 / DC34
PACKAGE MECHANICAL DATA (in millimeters)
DO 35 Glass
B A B /C
O
note 1 E E note 1
/D
O /D
O
note 2
Millimeters Inches
Min. Max. Min. Max.
A 3.050 4.500 0.120 0.117 1 - The lead diameter D is not controlled over zone E
B 12.7 0.500
2 - The minimum axial lengh within which the device may be
C 1.530 2.000 0.060 0.079
placed with its leads bent at right angles is 0.59(15 mm)
E 1.27 0.050
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
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