www.DataSheet4U.

com SPP20N60S5
Preliminary data SPB20N60S5
Cool MOS™==Power Transistor COOLMOS
Power Semiconductors
•=New revolutionary high voltage technology
Product Summary
• Worldwide best RDS(on) in TO 220
VDS @ Tjmax 650 V
• Ultra low gate charge
RDS(on) 0.19 Ω
•=Improved periodic avalanche rating
ID 20 A
• Extreme dv/dt rated
P-TO263-3-2 P-TO220-3-1
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx1N60S5/SPBx1N60S5

D,2
Type Package Ordering Code Marking
SPP20N60S5 P-TO220-3-1 Q67040-S4751 20N60S5
SPB20N60S5 P-TO263-3-2 Q67040-S4171 20N60S5
G,1
S,3

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TC=25°C 20
TC=100°C 13
Pulsed drain current 1) ID puls 40
TC=25°C

Avalanche energy, single pulse EAS 690 mJ

ID = 10 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax ) EAR 1
ID = 20 A, VDD = 50 V
Avalanche current (repetitive, limited by Tjmax ) IAR 20 A
Reverse diode dv/dt dv/dt 6 kV/µs
IS =20A, VDS<VDSS, di/dt=100A/µs, Tjmax =150°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 208 W
TC=25°C

Operating and storage temperature Tj , Tstg -55... +150 °C

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Preliminary data SPB20N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case RthJC - - 0.6 K/W
Thermal resistance, junction - ambient RthJA - - 62
(Leaded and through-hole packages)
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -

Static Characteristics, at Tj = 25 °C, unless otherwise specified

Drain-source breakdown voltage V(BR)DSS 600 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 3.5 4.5 5.5
ID = 1 mA, Tj = 25 °C
Zero gate voltage drain current, VDS=VDSS IDSS µA
VGS = 0 V, Tj = 25 °C - 0.5 25
VGS = 0 V, Tj = 150 °C - - 250
Gate-source leakage current IGSS - - 100 nA
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance RDS(on) - 0.16 0.19 Ω
VGS = 10 V, ID = 13 A

1current limited by T
jmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.

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Preliminary data SPB20N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS ≥2*ID *RDS(on)max , - 12 - S
ID =13A

Input capacitance Ciss VGS =0V, VDS =25V, - 3000 - pF

Output capacitance Coss f=1MHz - 1170 -
Reverse transfer capacitance Crss - 28 -
Turn-on delay time td(on) VDD =350V, VGS =10V, - 120 - ns
Rise time tr ID =20A, RG =5.7Ω - 25 -
Turn-off delay time td(off) - 140 210
Fall time tf - 30 45

Gate Charge Characteristics

Gate to source charge Qgs VDD =350V, ID =20A - 21 - nC
Gate to drain charge Qgd - 47 -
Total gate charge Qg VDD =350V, ID =20A, - 79 103
VGS =0 to 10V

Reverse Diode
Inverse diode continuous IS TC=25°C - - 20 A
forward current
Inverse diode direct ISM - - 40
current,pulsed
Inverse diode forward voltage VSD VGS =0V, IF =20A - 1 1.2 V
Reverse recovery time trr VR =100V, IF=lS, - 610 - ns
Reverse recovery charge Qrr diF /dt=100A/µs - 12 - µC

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Preliminary data SPB20N60S5
Power dissipation Drain current
Ptot = f (TC ) ID = f (TC )
parameter: VGS ≥ 10 V
SPP20N60S5 SPP20N60S5
240 22
W A

200 18
180
16
160
Ptot

14

ID
140
12
120
10
100
8
80
6
60

40 4

20 2

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID=f (VDS) ZthJC = f (tp )
parameter: D=0.01, TC =25°C parameter : D = tp /T
2 SPP20N60S5 SPP20N60S5
10 10 1
K/W
tp = 11.0µs
A
10 0
D
/I
DS
V
=

Z thJC
)
on

10 1 10 -1
(
DS
R
ID

100 µs

10 -2
D = 0.50
0.20
0 1 ms -3
10 10 0.10
0.05
10 ms
0.02
single pulse
DC 10 -4 0.01

10 -1 0 1 2 3
10 -5 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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Preliminary data SPB20N60S5
Typ. output characteristic Drain-source on-resistance
ID = f (VDS) RDS(on) = f (Tj )
Parameter: VGS, Tj = 25 °C parameter : ID = 13 A, VGS = 10 V
SPP20N60S5
75 1.1
A 20V Ω
15V
12V
11V 0.9
60

RDS(on)
55 0.8
50 10V
ID

0.7
45
40 0.6

35 0.5
9V
30
0.4
25
20 0.3
8V 98%
15 0.2
typ
10
7V 0.1
5
0 0
0 5 10 15 20 V 30 -60 -20 20 60 100 °C 180
VDS Tj

Typ. transfer characteristics Typ. capacitances

ID = f ( VGS ) C = f (VDS)
VDS≥ 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz
10 5
70
A

60
10 4
55
Ciss
50
ID

45
pF

10 3
40

35 Coss

30 10 2
25

20
Crss
15 1
10
10

0 10 0
0 2 4 6 8 10 12 14 16 V 20 0 10 20 30 40 50 60 70 80 V 100
VGS VDS

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Preliminary data SPB20N60S5
Avalanche Energy Avalanche SOA
EAS = f (Tj ) IAR = f (tAR )
par.: ID = 10 A, VDD = 50 V par.: Tj ≤ 150 °C
750 20
mJ

600 A
550
EAS

500

IAR
450
400
10
350
300 Tj (START)=25°C

250
200 5
150
Tj (START)=125°C
100
50
0 0 -3 -2 -1 0 1 2 4
20 40 60 80 100 120 °C 160 10 10 10 10 10 10 µs 10
Tj tAR

Drain-source breakdown voltage Gate threshold voltage

V(BR)DSS = f (Tj ) VGS(th) = f (Tj)
parameter: VGS = VDS , ID = 1 mA
SPP20N60S5
720 7

V
V
V (BR)DSS

680
V GS(th)

5
660
max.
4
640

typ.
620 3

600 min.
2
580

1
560

540 0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 180
Tj Tj

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Preliminary data SPB20N60S5
Forward characteristics of reverse diode Typ. gate charge
IF = f (VSD ) VGS = f (QGate )
parameter: Tj , tp = 10 µs parameter: IDpuls = 20 A
10 2 SPP20N60S5
16
SPP20N60S5

V
A

12 0,2 VDS max

1
0,8 VDS max
10

VGS
IF

10

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%) 2

10 -1 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 20 40 60 80 nC 120
VSD Qg

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Preliminary data SPB20N60S5

P-TO220-3-1
P-TO220-3-1

dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

TO-263 (D²Pak/P-TO220SMD)

dimensions
symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E 2.54 typ. 0.1 typ.
F 0.65 0.85 0.0256 0.0335
G 5.08 typ. 0.2 typ.
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N 15 typ. 0.5906 typ.
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R 8° max 8° max
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U 10.80 0.4252
V 1.15 0.0453
W 6.23 0.2453
X 4.60 0.1811
Y 9.40 0.3701
Z 16.15 0.6358

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Preliminary data SPB20N60S5

Published by
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.

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9 2001-07-25