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2002 - ON - SWITCHMODE Power Supply Reference Manual PDF
2002 - ON - SWITCHMODE Power Supply Reference Manual PDF
Rev. 3, Jul-2002
SWITCHMODE Power
Supply Reference Manual
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for
any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use
SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of
the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada For additional information, please contact your local Sales
Representative
SMPSRM/D
SWITCHMODE Power Supplies
SMPSRM/D
Rev. 3, July2002
SCILLC, 2002
Previous Edition 2000
All Rights Reserved
SMPSRM
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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Forward
Every new electronic product, except those that are battery powered, requires converting offline
115 Vac or 230 Vac power to some dc voltage for powering the electronics. The availability of design
and application information and highly integrated semiconductor control ICs for switching power
supplies allows the designer to complete this portion of the system design quickly and easily.
Whether you are an experienced power supply designer, designing your first switching power
supply or responsible for a make or buy decision for power supplies, the variety of information
in the SWITCHMODE Power Supplies Reference Manual and Design Guide should prove
useful.
ON Semiconductor has been a key supplier of semiconductor products for switching power supplies
since we introduced bipolar power transistors and rectifiers designed specifically for switching
power supplies in the mid70s. We identified these as SWITCHMODE products. A switching
power supply designed using ON Semiconductor components can rightfully be called a
SWITCHMODE power supply or SMPS.
This brochure contains useful background information on switching power supplies for those who
want to have more meaningful discussions and are not necessarily experts on power supplies. It also
provides real SMPS examples, and identifies several application notes and additional design
resources available from ON Semiconductor, as well as helpful books available from various
publishers and useful web sites for those who are experts and want to increase their expertise. An
extensive list and brief description of analog ICs, power transistors, rectifiers and other discrete
components available from ON Semiconductor for designing a SMPS are also provided. This
includes our newest GreenLine, Easy Switcher and very high voltage ICs (VHVICs), as well as
high efficiency HDTMOS and HVTMOS power FETs, and a wide choice of discrete products
in surface mount packages.
For the latest updates and additional information on analog and discrete products for power supply and
power management applications, please visit our website: (http://onsemi.com).
MEGAHERTZ, POWERTAP, SENSEFET, SWITCHMODE, and TMOS are trademarks of Semiconductor Components Industries,
LLC. HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC.
GreenLine, SMARTMOS and Motorola are trademarks of Motorola Inc.
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Table of Contents
Page
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Linear versus Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching Power Supply Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The ForwardMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The FlybackMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Common Switching Power Supply Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Interleaved Multiphase Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Selecting the Method of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
The Choice of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Bipolar Power Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Driving MOSFETs in Switching Power Supply Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
The Insulated Gate Bipolar Transistor (IGBT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
The Magnetic Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Laying Out the Printed Circuit Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Losses and Stresses in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Techniques to Improve Efficiency in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
The Synchronous Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Snubbers and Clamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
The Lossless Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
The Active Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
QuasiResonant Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SMPS Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Integrated Circuits for Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Suggested Components for Specific Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
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LO
SW
DIODE VOLTAGE
Vsat
(VOLTS)
Power Power
Switch Switch
Power OFF Power OFF
Switch Switch
ON ON
TIME
Vfwd
INDUCTOR CURRENT
Ipk
(AMPS)
Iload
Imin
Its operation can be better understood when it is broken clamped when the catch diode D becomes forward
into two time periods: when the power switch is turned biased. The stored energy then continues flowing to the
on and turned off. When the power switch is turned on, output through the catch diode and the inductor. The
the input voltage is directly connected to the input of the inductor current decreases from an initial value ipk and is
LC filter. Assuming that the converter is in a given by:
steadystate, there is the output voltage on the filters V t
output. The inductor current begins a linear ramp from an iL(off) ipk out 0
t
toff (eq. 3)
L
initial current dictated by the remaining flux in the
The off period continues until the controller turns the
inductor. The inductor current is given by:
power switch back on and the cycle repeats itself.
(Vin Vout) The buck converter is capable of over one kilowatt of
iL(on) t iinit 0
t
ton (eq. 2)
L output power, but is typically used for onboard regulator
During this period, energy is stored as magnetic flux applications whose output powers are less than 100 watts.
within the core of the inductor. When the power switch Compared to the flybackmode converter, the forward
is turned off, the core contains enough energy to supply converter exhibits lower output peaktopeak ripple
the load during the following off period plus some voltage. The disadvantage is that it is a stepdown
reserve energy. topology only. Since it is not an isolated topology, for
When the power switch turns off, the voltage on the safety reasons the forward converter cannot be used for
input side of the inductor tries to fly below ground, but is input voltages greater than 42.5 VDC.
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The FlybackMode Converter different fashion from the forwardmode converter. The
The basic flybackmode converter uses the same most elementary flybackmode converter, the boost or
components as the basic forwardmode converter, but in stepup converter, is shown in Figure 2.
a different configuration. Consequently, it operates in a
L
D
Cout
Vin SW Rload
Ion Ioff Iload
Vin
Vflbk
SWITCH VOLTAGE
Power Power
(Vout)
Switch Switch
(VOLTS)
ON ON
Power
Vsat Diode Switch Diode
ON ON ON
TIME
INDUCTOR CURRENT
Ipk
(AMPS)
Iload
TIME
Again, its operation is best understood by considering the the output rectifier when its voltage exceeds the output
on and off periods separately. When the power voltage. The energy within the core of the inductor is then
switch is turned on, the inductor is connected directly passed to the output capacitor. The inductor current
across the input voltage source. The inductor current then during the off period has a negative ramp whose slope is
rises from zero and is given by: given by:
V t
iL(on) in
t
0on (eq. 4) (Vin Vout)
L iL(off) (eq. 6)
L
Energy is stored within the flux in the core of the inductor.
The peak current, ipk , occurs at the instant the power The energy is then completely emptied into the output
switch is turned off and is given by: capacitor and the switched terminal of the inductor falls
V t back to the level of the input voltage. Some ringing is
ipk in on (eq. 5)
L evident during this time due to residual energy flowing
When the power switch turns off, the switched side of through parasitic elements such as the stray inductances
the inductor wants to flyup in voltage, but is clamped by and capacitances in the circuit.
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When there is some residual energy permitted to to a 50 percent duty cycle. There must be a time period
remain within the inductor core, the operation is called when the inductor is permitted to empty itself of its
continuous mode. This can be seen in Figure 3. energy.
Energy for the entire on and off time periods must be The boost converter is used for boardlevel (i.e.,
stored within the inductor. The stored energy is defined nonisolated) stepup applications and is limited to less
by: than 100150 watts due to high peak currents. Being a
nonisolated converter, it is limited to input voltages of
EL 0.5L ipk2 (eq. 7)
less than 42.5 VDC. Replacing the inductor with a
The boostmode inductor must store enough energy to transformer results in a flyback converter, which may be
supply the output load for the entire switching period (ton stepup or stepdown. The transformer also provides
+ toff). Also, boostmode converters are typically limited dielectric isolation from input to output.
SWITCH VOLTAGE
Vflbk
(Vout)
(VOLTS)
Vin
Power Power
Switch Diode Switch Diode
ON ON ON ON
TIME
Vsat
INDUCTOR CURRENT
Ipk
(AMPS)
TIME
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Factors 3, 4 and 5 have a direct affect upon the Cost is a major factor that enters into the topology
reliability of the system. Switching power supplies decision. There are large overlaps in the performance
deliver constant power to the output load. This power is boundaries between the topologies. Sometimes the most
then reflected back to the input, so at low input voltages, costeffective choice is to purposely design one topology
the input current must be high to maintain the output to operate in a region that usually is performed by
power. Conversely, the higher the input voltage, the another. This, though, may affect the reliability of the
lower the input current. The design goal is to place as desired topology.
much as possible of the input voltage across the Figure 4 shows where the common topologies are used
transformer or inductor so as to minimize the input for a given level of DC input voltage and required output
current. power. Figures 5 through 12 show the common
Boostmode topologies have peak currents that are topologies. There are more topologies than shown, such
about twice those found in forwardmode topologies. as the Sepic and the Cuk, but they are not commonly
This makes them unusable at output powers greater than used.
100150 watts.
1000
HalfBridge
DC INPUT VOLTAGE (V)
Flyback FullBridge
100
42.5
NonIsolated FullBridge
10
Buck Very High
Peak Currents
10 100 1000
OUTPUT POWER (W)
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L VFWD
Power Switch VD
+ +
0 TIME
Vin
D IPK
+ Vout
Vin
Cin Cout
Control IL
Feedback
0 TIME
ILOAD
IMIN
VFLBK
D D
VSW VSAT ON ON
L
D SW ON
Vin Cin TIME
+ 0
Vin
SW +
Control Vout
Cout IPK
IL
ISW ID
0 TIME
+
Vin
VL 0 TIME
Control SW
D
Vin Cin Vout
+
L Cout Vout
+ IL
Feedback ISW ID
0 TIME
IPK
VFLBK
VSAT
SW
VSW ON
0 TIME
+ D Vin
+
+
N1 N2 Cout
Cin Vout IPRI
Vin 0 TIME
IPK
SW
Control
ISEC
Feedback 0 TIME
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+ LO
D
T
+
N1 N2 +
Cout Vout
Cin
Vin
SW
Control
Feedback
SW
VSW ON
0 TIME
2Vin
VSAT
IPRI
0 TIME
IMIN IPK
SW1 LO
T D1
+
+
+ Cout Vout
D2
SW2
Vin
Control
Cin
Feedback
2Vin
Vin SW2
VSW SW1
0 TIME
VSAT
IPK
IPRI
0 TIME
IMIN
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LO
Ds +
+
Cout Vout
+
XFMR N2
SW1 C
T
Cin
Vin Control N1
SW2 C
Feedback
Vin
SW1
V in
2
SW2
VSW2 0 TIME
VSAT
IPK
IPRI
0 TIME
IMIN
+
XFMR N2 XFMR
SW1 SW3
T
Cin
Vin Control N1 C
SW2 SW4
Vin
SW
V in 1-4
2 SW
2-3
VSW2 0 TIME
VSAT
IPK
ISW2
0 TIME
IMIN
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Interleaved Multiphase Converters The input and output capacitors are shared among the
One method of increasing the output power of any phases. The input capacitor sees less RMS ripple current
topology and reducing the stresses upon the because the peak currents are less and the combined duty
semiconductors, is a technique called interleaving. Any cycle of the phases is greater than it would experience
topology can be interleaved. An interleaved multiphase with a single phase converter. The output capacitor can
converter has two or more identical converters placed in be made smaller because the frequency of current
parallel which share key components. For an nphase waveform is ntimes higher and its combined duty cycle
converter, each converter is driven at a phase difference is greater. The semiconductors also see less current
of 360/n degrees from the next. The output current from stress.
all the phases sum together at the output, requiring only A block diagram of an interleaved multiphase buck
Iout/n amperes from each phase. converter is shown in Figure 13. This is a 2phase
topology that is useful in providing power to a high
performance microprocessor.
+
+
VIN CIN
SA1
LA
VFDBK SA2
GATEA1
Control GATEA2 +
+
GATEB2 COUT VOUT
GND
SB1
CFA GATEB1 LB
CFB
CS5308 SB2
Current Feedback A
Current Feedback B
Voltage Feedback
Figure 13. Example of a TwoPhase Buck Converter with Voltage and Current Feedback
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Voltagemode control (see Figure 14) is typically used instantly cutoff if its limits are exceeded. This offers
for forwardmode topologies. In voltagemode control, better protection to the power switch.
only the output voltage is monitored. A voltage error Currentmode control (see Figure 15) is typically used
signal is calculated by forming the difference between with boostmode converters. Currentmode control
Vout (actual) and Vout(desired). This error signal is then monitors not only the output voltage, but also the output
fed into a comparator that compares it to the ramp voltage current. Here the voltage error signal is used to control
generated by the internal oscillator section of the control the peak current within the magnetic elements during
IC. The comparator thus converts the voltage error signal each power switch ontime. Currentmode control has a
very rapid input and output response time, and has an
into the PWM drive signal to the power switch. Since the
inherent overcurrent protection. It is not commonly used
only control parameter is the output voltage, and there is
for forwardmode converters; their current waveforms
inherent delay through the power circuit, voltagemode
have much lower slopes in their current waveforms
control tends to respond slowly to input variations.
which can create jitter within comparators.
Overcurrent protection for a voltagemode controlled Hysteretic control is a method of control which tries to
converter can either be based on the average output keep a monitored parameter between two limits. There
current or use a pulsebypulse method. In average are hysteretic current and voltage control methods, but
overcurrent protection, the DC output current is they are not commonly used.
monitored, and if a threshold is exceeded, the pulse width The designer should be very careful when reviewing a
of the power switch is reduced. In pulsebypulse prospective control IC data sheet. The method of control
overcurrent protection, the peak current of each power and any variations are usually not clearly described on
switch on cycle is monitored and the power switch is the first page of the data sheet.
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VCC
OSC Charge
Clock Ramp
Verror
Discharge
Ct
Volt
Verror Amp. Output
Comp. Gating
VFB Logic
+
+
+ Pulsewidth
Vref Comparator
Steering
Average
Overcurrent
Protection
Cur.
Comp. Current Amp.
Iout (lavOC) +
RCS PulsebyPulse
or + Overcurrent
ISW (PPOC) VOC Protection
VSS
VCC
OSC
+
Ct Discharge
Output
Gating
Logic
Volt S
Comp. Verror Amp. Q Output
VFB
Verror R
+
+
Vref
Current
Comparator S R S
+
Ipk
VSS
ISW
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The Choice of Semiconductors One should generate a gate drive voltage that is as close
Power Switches to 0.7 volts as possible. This is to minimize any loss
The choice of which semiconductor technology to use created by dropping the base drive voltage at the required
for the power switch function is influenced by many base current to the level exhibited by the base.
factors such as cost, peak voltage and current, frequency A second consideration is the storage time exhibited by
of operation, and heatsinking. Each technology has its the collector during its turnoff transition. When the base
own peculiarities that must be addressed during the is overdriven, or where the base current is more than
design phase. needed to sustain the collector current, the collector
There are three major power switch choices: the exhibits a 0.32 s delay in its turnoff which is
bipolar junction transistor (BJT), the power MOSFET, proportional to the base overdrive. Although the storage
and the integrated gate bipolar transistor (IGBT). The time is not a major source of loss, it does significantly
BJT was the first power switch to be used in this field and limit the maximum switching frequency of a
still offers many cost advantages over the others. It is also bipolarbased switching power supply. There are two
still used for very low cost or in high power switching methods of reducing the storage time and increasing its
converters. The maximum frequency of operation of switching time. The first is to use a base speedup
bipolar transistors is less than 80100 kHz because of capacitor whose value, typically around 100 pF, is placed
some of their switching characteristics. The IGBT is used in parallel with the base current limiting resistor
for high power switching converters, displacing many of (Figure 16a). The second is to use proportional base drive
the BJT applications. They too, though, have a slower (Figure 16b). Here, only the amount of needed base
switching characteristic which limits their frequency of current is provided by the drive circuit by bleeding the
operation to below 30 kHz typically although some can excess around the base into the collector.
reach 100 kHz. IGBTs have smaller die areas than power The last consideration with BJTs is the risk of
MOSFETs of the same ratings, which typically means a excessive second breakdown. This phenomenon is
lower cost. Power MOSFETs are used in the majority of caused by the resistance of the base across the die,
applications due to their ease of use and their higher permitting the furthest portions of the collector to turn off
frequency capabilities. Each of the technologies will be later. This forces the current being forced through the
reviewed. collector by an inductive load, to concentrate at the
The Bipolar Power Transistor opposite ends of the die, thus causing an excessive
The BJT is a current driven device. That means that the localized heating on the die. This can result in a
base current is in proportion to the current drawn through shortcircuit failure of the BJT which can happen
the collector. So one must provide: instantaneously if the amount of current crowding is
great, or it can happen later if the amount of heating is
IB IC hFE (eq. 8) less. Current crowding is always present when an
In power transistors, the average gain (hFE) exhibited at inductive load is attached to the collector. By switching
the higher collector currents is between 5 and 20. This the BJT faster, with the circuits in Figure 15, one can
could create a large base drive loss if the base drive circuit greatly reduce the effects of second breakdown on the
is not properly designed. reliability of the device.
VBB VBB
100 pF +
Control IC VCE
+
VBE
100 pF
Power Ground
(a) Fixed Base Drive Circuit (b) Proportional Base Drive Circuit (Baker Clamp)
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The Power MOSFET From the gate terminal, there are two capacitances the
Power MOSFETs are the popular choices used as designer encounters, the gate input capacitance (Ciss) and
power switches and synchronous rectifiers. They are, on the draingate reverse capacitance (Crss). The gate input
the surface, simpler to use than BJTs, but they have some capacitance is a fixed value caused by the capacitance
hidden complexities. formed between the gate metalization and the substrate.
A simplified model for a MOSFET can be seen in Its value usually falls in the range of 8003200 pF,
Figure 17. The capacitances seen in the model are depending upon the physical construction of the
specified within the MOSFET data sheets, but can be MOSFET. The Crss is the capacitance between the drain
nonlinear and vary with their applied voltages. and the gate, and has values in the range of 60150 pF.
Although the Crss is smaller, it has a much more
pronounced effect upon the gate drive. It couples the
drain voltage to the gate, thus dumping its stored charge
into the gate input capacitance. The typical gate drive
waveforms can be seen in Figure 18. Time period t1 is
only the Ciss being charged or discharged by the
CDG
impedance of the external gate drive circuit. Period t2
Coss shows the effect of the changing drain voltage being
CGS coupled into the gate through Crss. One can readily
observe the flattening of the gate drive voltage during
this period, both during the turnon and turnoff of the
MOSFET. Time period t3 is the amount of overdrive
Figure 17. The MOSFET Model voltage provided by the drive circuit but not really
needed by the MOSFET.
VDR
TURN TURNOFF
ON
t3 t3
t1 t2 t2 t1
VGS Vpl
Vth
0
VDS
IG
+
0
Figure 18. Typical MOSFET Drive Waveforms (Top: VGS, Middle: VDG, Bottom: IG)
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The time needed to switch the MOSFET between on Driving MOSFETs in Switching
and off states is dependent upon the impedance of the Power Supply Applications
gate drive circuit. It is very important that the drive circuit There are three things that are very important in the
be bypassed with a capacitor that will keep the drive high frequency driving of MOSFETs: there must be a
voltage constant over the drive period. A 0.1 F capacitor totempole driver; the drive voltage source must be well
is more than sufficient. bypassed; and the drive devices must be able to source
high levels of current in very short periods of time (low
compliance). The optimal drive circuit is shown in
Figure 19.
VG VG
LOAD LOAD
Ron
Roff
VG VG
LOAD LOAD
Figure 19. Bipolar and FETBased Drive Circuits (a. Bipolar Drivers, b. MOSFET Drivers)
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Sometimes it is necessary to provide a circuit. Both of the series capacitors must be more than
dielectricallyisolated drive to a MOSFET. This is 10 times the value of the Ciss of the MOSFET so that the
provided by a drive transformer. Transformers driven capacitive voltage divider that is formed by the series
from a DC source must be capacitively coupled from the capacitors does not cause an excessive attenuation. The
totempole driver circuit. The secondary winding must circuit can be seen in Figure 20.
be capacitively coupled to the gate with a DC restoration
C RG
T
VG
1k
C
1:1
C > 10
Ciss
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SMPSRM
a high reverse leakage current. For a typical switching The characteristics of power rectifiers and their
power supply application, the best choice is usually a applications in switching power supplies are covered in
Schottky rectifier for output voltages less than 12 V, and great detail in Reference (5).
an ultrafast recovery diode for all other output voltages. The major losses within output rectifiers are
The major losses within output rectifiers are conduction losses and switching losses. The conduction
conduction losses and switching losses. The conduction loss is the forward voltage drop times the current flowing
loss is the forward voltage drop times the current flowing through it during its conduction period. This can be
through it during its conduction period. This can be significant if its voltage drop and current are high. The
significant if its voltage drop and current are high. The switching losses are determined by how fast a diode turns
switching losses are determined by how fast a diode turns off (trr) times the reverse voltage across the rectifier. This
off (trr) times the reverse voltage across the rectifier. This can be significant for high output voltages and currents.
can be significant for high output voltages and currents.
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SMPSRM
Within all switching power supplies, there are four rectifier to the output filter capacitor and back to the
major current loops. Two of the loops conduct the inductor or winding. The filter capacitors are the only
highlevel AC currents needed by the supply. These are components that can source and sink the large levels of
the power switch AC current loop and the output rectifier AC current in the time needed by the switching power
AC current loop. The currents are the typical trapezoidal supply. The PCB traces should be made as wide and as
current pulses with very high peak currents and very short as possible, to minimize resistive and inductive
rapid di/dts. The other two current loops are the input effects. These traces should be the first to be laid out.
source and the output load current loops, which carry low Turning to the input source and output load current
frequency current being supplied from the voltage source loops, both of these loops must be connected directly to
and to the load respectively. their respective filter capacitors terminals, otherwise
For the power switch AC current loop, current flows switching noise could bypass the filtering action of the
from the input filter capacitor through the inductor or capacitor and escape into the environment. This noise is
transformer winding, through the power switch and back called conducted interference. These loops can be seen
to the negative pin of the input capacitor. Similarly, the in Figure 21 for the two major forms of switching
output rectifier current loops current flows from the power supplies, nonisolated (Figure 21a) and
inductor or secondary transformer winding, through the transformerisolated (Figure 21b).
Power Switch Output Rectifier
Current Loop L Current Loop
SW Vout
Input Current
Loop
Output Load
Current Loop
+ VFB
Vin Control
Cin Cout
Analog GND C
A B
Input Source Power Output Rectifier Output Load
Ground Switch Ground Ground Ground
Join Join Join
VFB
Cout
SW
+
Vin Cin Control
B
Output Rectifier Output Load
Ground Ground
RCS
Analog Join
GND
FB
C Join
A
Input Source Power Switch Ground
Ground
Join (b) The TransformerIsolated Converter
Figure 21. The Current Loops and Grounds for the Major Converter Topologies
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SMPSRM
The grounds are extremely important to the proper The last important factor in the PCB design is the
operation of the switching power supply, since they form layout surrounding the AC voltage nodes. These are the
the reference connections for the entire supply; each drain of the power MOSFET (or collector of a BJT) and
ground has its own unique set of signals which can the anode of the output rectifier(s). These nodes can
adversely affect the operation of the supply if connected capacitively couple into any trace on different layers of
improperly. the PCB that run underneath the AC pad. In surface
There are five distinct grounds within the typical mount designs, these nodes also need to be large enough
switching power supply. Four of them form the return to provide heatsinking for the power switch or rectifier.
paths for the current loops described above. The This is at odds with the desire to keep the pad as small as
remaining ground is the lowlevel analog control ground possible to discourage capacitive coupling to other
which is critical for the proper operation of the supply. traces. One good compromise is to make all layers below
The grounds which are part of the major current loops the AC node identical to the AC node and connect them
must be connected together exactly as shown in with many vias (platedthrough holes). This greatly
Figure 21. Here again, the connecting point between the increases the thermal mass of the pad for improved
highlevel AC grounds and the input or output grounds
heatsinking and locates any surrounding traces off
is at the negative terminal of the appropriate filter
laterally where the coupling capacitance is much smaller.
capacitor (points A and B in Figures 21a and 21b). Noise
An example of this can be seen in Figure 22.
on the AC grounds can very easily escape into the
Many times it is necessary to parallel filter capacitors
environment if the grounds are not directly connected to
to reduce the amount of RMS ripple current each
the negative terminal of the filter capacitor(s). The
analog control ground must be connected to the point capacitor experiences. Close attention should be paid to
where the control IC and associated circuitry must this layout. If the paralleled capacitors are in a line, the
measure key power parameters, such as AC or DC capacitor closest to the source of the ripple current will
current and the output voltage (point C in Figures 21a and operate hotter than the others, shortening its operating
21b). Here any noise introduced by large AC signals life; the others will not see this level of AC current. To
within the AC grounds will sum directly onto the ensure that they will evenly share the ripple current,
lowlevel control parameters and greatly affect the ideally, any paralleled capacitors should be laid out in a
operation of the supply. The purpose of connecting the radiallysymmetric manner around the current source,
control ground to the lower side of the current sensing typically a rectifier or power switch.
resistor or the output voltage resistor divider is to form a The PCB layout, if not done properly, can ruin a good
Kelvin contact where any common mode noise is not paper design. It is important to follow these basic
sensed by the control circuit. In short, follow the example guidelines and monitor the layout every step of the
given by Figure 21 exactly as shown for best results. process.
Power Device
PlatedThru Hole PCB Bottom
Figure 22. Method for Minimizing AC Capacitive Coupling and Enhancing Heatsinking
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Losses and Stresses in Switching the circuitry, and some are controlled by simply selecting
Power Supplies a different part. Identifying the major sources for loss can
Much of the designers time during a switching power be as easy as placing a finger on each of the components
supply design is spent in identifying and minimizing the in search of heat, or measuring the currents and voltages
losses within the supply. Most of the losses occur in the associated with each power component using an
power components within the switching power supply. oscilloscope, AC current probe and voltage probe.
Some of these losses can also present stresses to the Semiconductor losses fall into two categories:
power semiconductors which may affect the long term conduction losses and switching losses. The conduction
reliability of the power supply, so knowing where they loss is the product of the terminal voltage and current
arise and how to control them is important. during the power devices on period. Examples of
Whenever there is a simultaneous voltage drop across conduction losses are the saturation voltage of a bipolar
a component with a current flowing through, there is a power transistor and the on loss of a power MOSFET
loss. Some of these losses are controllable by modifying shown in Figure 23 and Figure 24 respectively.
DRAIN-TO-SOURCE VOLTAGE
VPEAK
COLLECTOR-TO-EMITTER
VPEAK
(VOLTS)
(VOLTS)
SATURATION FALL
VOLTAGE TIME ON VOLTAGE
RISE DYNAMIC STORAGE RISE FALL
TIME SATURATION TIME TIME TIME
CLEARING IPEAK
CLEARING RECTIFIERS
COLLECTOR CURRENT
RECTIFIERS IPEAK
DRAIN CURRENT
CURRENT
CROWDING
INSTANTANEOUS ENERGY
SECOND PERIOD
INSTANTANEOUS ENERGY
BREAKDOWN
LOSS (JOULES)
PERIOD
LOSS (JOULES)
ON LOSS
SATURATION
LOSS
TURN-ON TURN-OFF LOSS TURN-ON TURN-OFF LOSS
LOSS SWITCHING LOSS LOSS SWITCHING LOSS
Figure 23. Stresses and Losses Figure 24. Stresses and Losses
within a Bipolar Power Transistor within a Power MOSFET
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The forward conduction loss of a rectifier is shown in creates a very large VI product which is as significant as
Figure 25. During turnoff, the rectifier exhibits a reverse the conduction losses. Switching losses are also the major
recovery loss where minority carriers trapped within the frequency dependent loss within every PWM switching
PN junction must reverse their direction and exit the power supply.
junction after a reverse voltage is applied. This results in The lossinduced heat generation causes stress within
what appears to be a current flowing in reverse through the power component. This can be minimized by an
the diode with a high reverse terminal voltage. effective thermal design. For bipolar power transistors,
The switching loss is the instantaneous product of the however, excessive switching losses can also provide a
terminal voltage and current of a power device when it is lethal stress to the transistor in the form of second
transitioning between operating states (ontooff and breakdown and current crowding failures. Care should be
offtoon). Here, voltages are transitional between taken in the careful analysis of each transistors Forward
fullon and cutoff states while simultaneously the current BiasedSafe Operating Area (FBSOA) and Reverse
is transitional between fullon and cutoff states. This BiasedSafe Operating Area (RBSOA) operation.
DIODE VOLTAGE
(VOLTS)
FORWARD VOLTAGE
REVERSE VOLTAGE
IPK
DIODE CURRENT
(AMPS)
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SMPSRM
the MOSFET should be placed in parallel with the typical switching power supply.
synchronous MOSFET. The MOSFET does contain a The synchronous rectifier can be driven either actively,
parasitic body diode that could conduct current, but it is that is directly controlled from the control IC, or
lossy, slow to turn off, and can lower efficiency by 1% to passively, driven from other signals within the power
2%. The lower turnon voltage of the Schottky prevents circuit. It is very important to provide a nonoverlapping
the parasitic diode from ever conducting and exhibiting drive between the power switch(es) and the synchronous
its poor reverse recovery characteristic. rectifier(s) to prevent any shootthrough currents. This
Using synchronous rectification, the conduction dead time is usually between 50 to 100 ns. Some typical
voltage can be reduced from 400 mV to 100 mV or less. circuits can be seen in Figure 26.
An improvement of 15 percent can be expected for the
Vin + Vout
SW
Drive
GND
Direct
SR
C RG
VG
C D 1k
1:1
C > 10 Ciss
TransformerIsolated
LO
+ Vout
Primary
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SMPSRM
Snubbers and Clamps Therefore it is not very useful for reducing RFI. It is
Snubbers and clamps are used for two very different useful for preventing components such as
purposes. When misapplied, the reliability of the semiconductors and capacitors from entering avalanche
semiconductors within the power supply is greatly breakdown.
jeopardized. Bipolar power transistors suffer from current crowding
A snubber is used to reduce the level of a voltage spike which is an instantaneous failure mode. If a voltage spike
and decrease the rate of change of a voltage waveform. occurs during the turnoff voltage transition of greater
This then reduces the amount of overlap of the voltage than 75 percent of its VCEO rating, it may have too much
and current waveforms during a transition, thus reducing current crowding stress. Here both the rate of change of
the switching loss. This has its benefits in the Safe the voltage and the peak voltage of the spike must be
Operating Area (SOA) of the semiconductors, and it controlled. A snubber is needed to bring the transistor
reduces emissions by lowering the spectral content of any within its RBSOA (Reverse Bias Safe Operating Area)
RFI. rating. Typical snubber and clamp circuits are shown in
A clamp is used only for reducing the level of a voltage Figure 27. The effects that these have on a representative
spike. It has no affect on the dV/dt of the transition. switching waveform are shown in Figure 28.
Figure 27. Common Methods for Controlling Voltage Spikes and/or RFI
CLAMP
SNUBBER
VOLTAGE (VOLTS)
ORIGINAL
WAVEFORM
t, TIME (sec)
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Unsnubbed VSW
+ Snubbed VSW
VSW ID
Figure 29. Lossless Snubber for a One Transistor Forward or Flyback Converter
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The Active Clamp stored energy) just prior to the turnoff transition. It is
An active clamp is a gated MOSFET circuit that allows then disabled during the negative transition.
the controller IC to activate a clamp or a snubber circuit Obviously, the implementation of an active clamp is
at a particular moment in a switching power supplys more expensive than other approaches, and is usually
cycle of operation. An active clamp for a flyback reserved for very compact power supplies where heat is
converter is shown in Figure 30. a critical issue.
In Figure 30, the active clamp is reset (or emptied of its
Unclamped
Switch Voltage
(VSW)
Clamped Switch
Voltage (VSW)
Vin
Switch
Current (ISW)
+
VDR ICL
+
ISW VSW
Drive
Voltage (VDR)
GND
Discharge Charge
Clamp
Current (ICL)
Figure 30. An Active Clamp Used in a One Transistor Forward or a Flyback Converter
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ILR
LR LO
CR D
Vin VSW Vout
Cin Cout
CONTROL
FEEDBACK
SWITCH
TURN-OFF
Vin
V SW
POWER SWITCH
ON
IPK
I LR
VD
Figure 31. Schematic and Waveforms for a ZCS Quasi-Resonant Buck Converter
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In this design, both the power switch and the catch power delivered to the load, the amount of resonant off
diode operate in a zero current switching mode. Power is times are varied. For light loads, the frequency is high.
passed to the output during the resonant periods. So to When the load is heavy, the frequency drops. In a typical
increase the power delivered to the load, the frequency ZVS power supply, the frequency typically varies 4:1
would increase, and vice versa for decreasing loads. In over the entire operating range of the supply.
typical designs the frequency can change 10:1 over the There are other variations on the resonant theme that
ZCS supplys operating range. promote zero switching losses, such as full resonant
The ZVS is a fixed offtime, variable ontime method PWM, full and halfbridge topologies for higher power
control. Here the initial condition occurs when the power and resonant transition topologies. For a more detailed
switch is on, and the familiar current ramp is flowing treatment, see Chapter 4 in the Power Supply
through the filter inductor. The ZVS quasiresonant buck Cookbook (Bibliography reference 2).
converter is shown in Figure 32. Here, to control the
LR LO
CR D
Vin VI/P Vout
Cin FEEDBACK Cout
CONTROL
Vin
V I/P
POWER SWITCH
TURNS ON
0
V V
in out
IPK L L
R O
I SW
V
in
L
R ILOAD
0
ID
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Power
not used
VOLTAGE
Power used
I
110/220
+
AC VOLTS IN
DC To Power
Clarge
Supply
CURRENT
IAV
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A Power Factor Correction (PFC) circuit is a switching pulses generate more heat than a purely resistive load of
power converter, essentially a boost converter with a very the same power. The active power factor correction
wide input range, that precisely controls its input current circuit is placed just following the AC rectifier bridge. An
on an instantaneous basis to match the waveshape and example can be seen in Figure 34.
phase of the input voltage. This represents a zero degrees Depending upon how much power is drawn by the unit,
or 100 percent power factor and mimics a purely resistive there is a choice of three different common control
load. The amplitude of the input current waveform is modes. All of the schematics for the power sections are
varied over longer time frames to maintain a constant the same, but the value of the PFC inductor and the
voltage at the converters output filter capacitor. This control method are different. For input currents of less
mimics a resistor which slowly changes value to absorb than 150 watts, a discontinuousmode control scheme is
the correct amount of power to meet the demand of the typically used, in which the PFC core is completely
load. Short term energy excesses and deficits caused by emptied prior to the next power switch conduction cycle.
sudden changes in the load are supplemented by a bulk For powers between 150 and 250 watts, the critical
energy storage capacitor, the boost converters output conduction mode is recommended. This is a method of
filter device. The PFC input filter capacitor is reduced to control where the control IC senses just when the PFC
a few microfarads, thus placing a halfwave haversine core is emptied of its energy and the next power switch
waveshape into the PFC converter. conduction cycle is immediately begun; this eliminates
The PFC boost converter can operate down to about any dead time exhibited in the discontinuousmode of
30 V before there is insufficient voltage to draw any more control. For an input power greater than 250 watts, the
significant power from its input. The converter then can continuousmode of control is recommended. Here the
begin again when the input haversine reaches 30 V on the peak currents can be lowered by the use of a larger
next halfwave haversine. This greatly increases the inductor, but a troublesome reverse recovery
conduction angle of the input rectifiers. The dropout characteristic of the output rectifier is encountered,
region of the PFC converter is then filtered (smoothed) which can add an additional 2040 percent in losses to the
by the input EMI filter. PFC circuit.
A PFC circuit not only ensures that no power is Many countries cooperate in the coordination of their
reflected back to the source, it also eliminates the power factor requirements. The most appropriate
high current pulses associated with conventional document is IEC6100032, which encompasses the
rectifierfilter input circuits. Because heat lost in the performance of generalized electronic products. There
transmission line and adjacent circuits is proportional to are more detailed specifications for particular products
the square of the current in the line, short strong current made for special markets.
Switch Current
Input Voltage I
Vout
Vsense
Csmall +
Control Clarge To Power
Supply
Conduction Angle
IAVG
Current
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Bibliography
1. BenYaakov Sam, Gregory Ivensky, Passive Lossless Snubbers for High Frequency PWM Converters,
Seminar 12, APEC 99.
2. Brown, Marty, Power Supply Cookbook, ButterworthHeinemann, 1994, 2001.
3. Brown, Marty, Laying Out PC Boards for Embedded Switching Supplies, Electronic Design, Dec. 1999.
4. Martin, Robert F., Harmonic Currents, Compliance Engineering 1999 Annual Resources Guide, Cannon
Communications, LLC, pp. 103107.
5. ON Semiconductor, Rectifier Applications Handbook, HB214/D, Rev. 2, Nov. 2001.
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Page
Some of these circuits may have a more complete application note, spice model information or even an evaluation board
available. Consult ON Semiconductors website (http://onsemi.com) or local sales office for more information.
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SMPSRM
SNUBBER/
DCDC
CONVERSION V ref
36
POWER
SWITCH
PWM
Monitor
Power
. 15
RWM Video
Monitor On Screen Display Driver
I2C BUS Generator
MCU 10101100101
R
Overlayed
RGB RGB
SYNC PROCESSOR V_Sync
G CRT
V_Sync
1280 H_Sync
x
H_Sync 1024
RGB B
HC05
CPU
CORE MEMORY
PWM
or I2C R
Vertical
G Driver
RGB
B
DOWN
USB HUB
HDriver TR
MTD6N10/15
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UC384x MUR420
MC44603/5 Sync
Signal MUR440
MC44608 MUR460
NCP1200
SMPSRM
NCP1205
Startup Ultrafast
Rectifier +
Switch
Rectifier
Load
+ Bulk
Storage
Capacitor
PWM MOSFET
Control
AC IC noutputs
Line Prog.
Prec.
PWM Switcher Ref
Table 1.
Part # Description Key Parameters Samples/Prod.
MC33262 PFC Control IC Critical Conduction PFC Controller Now/Now
MC33368 PFC Control IC Critical Conduction PFC Controller + Internal Startup Now/Now
MC33260 PFC Control IC Low System Cost, PFC with Synchronization Now/Now
Capability, Follower Boost Mode, or Normal Mode
MC33365 PWM Control IC Fixed Frequency Controller + 700 V Startup, 1 A Now/Now
Power Switch
MC33364 PWM Control IC Variable Frequency Controller + 700 V Startup Switch Now/Now
MC44603A/604 PWM Control IC GreenLine, Sync. Facility with Low Standby Mode Now/Now
MC44605 PWM Control IC GreenLine, Sync. Facility, Currentmode Now/Now
MC44608 PWM Control IC GreenLine, Fixed Frequency (40 kHz, 75 kHz and 100 Now/Now
kHz options), Controller + Internal Startup, 8pin
MSR860 Ultrasoft Rectifier 600 V, 8 A, trr = 55 ns, Ir max = 1 uA Now/Now
MUR440 Ultrafast Rectifier 400 V, 4 A, trr = 50 ns, Ir max = 10 uA Now/Now
MRA4006T3 Fast Recovery Rectifier 800 V, 1 A, Vf = 1.1 V @ 1.0 A Now/Now
MR856 Fast Recovery Rectifier 600 V, 3 A, Vf = 1.25 V @ 3.0 A Now/Now
NCP1200 PWM CurrentMode Controller 110 mA Source/Sink, O/P Protection, 40/60/110 kHz Now/Now
NCP1205 SingleEnded PWM Controller Quasiresonant Operation, 250 mA Source/Sink, Now/Now
836 V Operation
UC3842/3/4/5 High Performance CurrentMode 500 kHz Freq., Totem Pole O/P, CyclebyCycle Now/Now
Controllers Current Limiting, UV Lockout
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Startup Ultrafast
Rectifier +
Switch
Rectifier
Load
+ Bulk
Storage
Capacitor
PWM MOSFET
Control
AC IC noutputs
Line Prog.
Prec.
PWM Switcher Ref
Table 2.
Part # Description Key Parameters Samples/Prod.
MC33363A/B/65 PWM Control IC Controller + 700 V Startup & Power Switch, < 15 W Now/Now
MC33364 PWM Control IC Critical Conduction Mode, SMPS Controller Now/Now
TL431B Program Precision Reference 0.4% Tolerance, Prog. Output up to 36 V, Temperature Now/Now
Compensated
MSRD620CT Ultrasoft Rectifier 200 V, 6 A, trr = 55 ns, Ir max = 1 uA Now/Now
MR856 Fast Recovery Rectifier 600 V, 3 A, Vf = 1.25 V @ 3.0 A Now/Now
NCP1200 PWM CurrentMode Controller 110 mA Source/Sink, O/P Protection, 40/60/110 kHz Now/Now
NCP1205 SingleEnded PWM Controller Quasiresonant Operation, 250 mA Source/Sink, Now/Now
836 V Operation
UC3842/3/4/5 High Performance CurrentMode 500 kHz Freq., Totem Pole O/P, CyclebyCycle Now/Now
Controllers Current Limiting, UV Lockout
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Lo Lo
Voltage
+ Regulation + + +
V in Co Vout V in Co Vout
Load Control IC Load
Control IC
Table 3.
Part # Description Key Parameters Samples/Prod.
MC33263 Low Noise, Low Dropout 150 mA; 8 Outputs 2.8 V 5 V; SOT 23L 6 Lead Now/Now
Regulator IC Package
MC33269 Medium Dropout Regulator IC 0.8 A; 3.3; 5, 12 V out; 1 V diff; 1% Tolerance Now/Now
MC33275/375 Low Dropout Regulator 300 mA; 2.5, 3, 3.3, 5 V out Now/Now
LP2950/51 Low Dropout, Fixed Voltage IC 0.1 A; 3, 3.3, 5 V out; 0.38 V diff; 0.5% Tolerance Now/Now
MC78PC CMOS LDO Linear Voltage Iout = 150 mA, Available in 2.8 V, 3 V, 3.3 V, 5 V; SOT Now/Now
Regulator 23 5 Leads
MC33470 Synchronous Buck Regulator IC Digital Controlled; Vcc = 7 V; Fast Response Now/Now
NTMSD2P102LR2 PCh FET w/Schottky in SO8 20 V, 2 A, 160 m FET/1 A, Vf = 0.46 V Schottky Now/Now
NTMSD3P102R2 PCh FET w/Schottky in SO8 20 V, 3 A, 160 m FET/1 A, Vf = 0.46 V Schottky Now/Now
MMDFS6N303R2 NCh FET w/Schottky in SO8 30 V, 6 A, 35 m FET/3 A, Vf = 0.42 V Schottky Now/Now
NTMSD3P303R2 PCh FET w/Schottky in SO8 30 V, 3 A, 100 m FET/3 A, Vf = 0.42 V Schottky Now/Now
MBRM140T3 1A Schottky in POWERMITE 40 V, 1 A, Vf = 0.43 @ 1 A; Ir = 0.4 mA @ 40 V Now/Now
Package
MBRA130LT3 1A Schottky in SMA Package 40 V, 1 A, Vf = 0.395 @ 1 A; Ir = 1 mA @ 40 V Now/Now
MBRS2040LT3 2A Schottky in SMB Package 40 V, 2 A, Vf = 0.43 @ 2 A; Ir = 0.8 mA @ 40 V Now/Now
MMSF3300 Single NCh MOSFET in SO8 30 V, 11.5 A(1), 12.5 m @ 10 V Now/Now
NTD4302 Single NCh MOSFET in DPAK 30 V, 18.3 A(1), 10 m @ 10 V Now/Now
NTTS2P03R2 Single PCh MOSFET in 30 V, 2.7 A, 90 m @ 10 V Now/Now
Micro8 Package
MGSF3454X/V Single NCh MOSFET in 30 V, 4.2 A, 65 m @ 10 V Now/Now
TSOP6
NTGS3441T1 Single PCh MOSFET in 20 V, 3.3 A, 100 m @ 4.5 V Now/Now
TSOP6
NCP1500 Dual Mode PWM Linear Buck Prog. O/P Voltage 1.0, 1.3, 1.5, 1.8 V Now/Now
Converter
NCP1570 Low Voltage Synchronous Buck UV Lockout, 200 kHz Osc. Freq., 200 ns Response Now/Now
Converter
NCP1571 Low Voltage Synchronous Buck UV Lockout, 200 kHz Osc. Freq., 200 ns Response Now/Now
Converter
CS5422 Dual Synchronous Buck 150 kHz600 kHz Prog. Freq., UV Lockout, 150 ns Now/Now
Converter Transient Response
(1) Continuous at TA = 25 C, Mounted on 1 square FR4 or G10, VGS = 10 V t 10 seconds
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Part No. V RRM (V) I o (A) Package Part No. V RRM (V) I o (A) Package
TL594 DIP16/SO16 IC
12 V 0.8 A 1N5821 30 3 Axial
MC34023 DIP16/SO16 1N5822 40 3 Axial
MC44608 DIP8 MBR340 40 3 Axial
+
MC44603 DIP16/SO16
MC44603A DIP16/SO16
Part No. V RRM (V) I o (A) Package
SMPSRM
Figure 35. Typical 200 W ATX Forward Mode SMPS
SMPSRM
1 C5 100 k
R6 1N4934
MC33262 D6
8
D2 D4 +
+ 36 V 100
ZERO CURRENT 1.2 V C4
FILTER
92 to DETECTOR T
RFI
TIMER R 16 V 230 V/
10 500 V/8 A
7 0.35 A
DRIVE NCh
DELAY MOSFET +
OUTPUT 220
RS 10 Q1 C3
LATCH
2.2 M 1.0 M
R5 20 k 4 R2
1.5 V OVERVOLTAGE 0.1
10 pF
COMPARATOR R7
CURRENT
SENSE
COMPARATOR + 1.08 Vref
ERROR AMP
10 A +
MULTIPLIER Vref 1
0.01 7.5 k 3
C2 R3 11 k
QUICKSTART R1
6 2
0.68
C1
Figure 42. 80 W Power Factor Controller
Features:
Reduced part count, lowcost solution.
ON Semiconductor Advantages:
Complete semiconductor solution based around highly integrated MC33262.
Devices:
Part Number Description
MC33262 Power Factor Controller
MUR130 Axial Lead Ultrafast Recovery Rectifier (300 V)
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Vcc
FUSE 0.33 F
1N5404 + L1
10 F/
MAINS
AC LINE 100 nF FILTER
16 V MUR460 Vout
+ 100 F/
450 V
1 8
500 V/8 A
NCh
MC33260
100 nF 2 7
MOSFET
10
3 6
4 5
12 k
1 M
120 pF
45 k 1 M
0.5 /3 W
Features :
Lowcost system solution for boost mode follower.
Meets IEC100032 standard.
Critical conduction, voltage mode.
Follower boost mode for system cost reduction smaller inductor and MOSFET can be used.
Inrush current detection.
Protection against overcurrent, overvoltage and undervoltage.
ON Semiconductor advantages:
Very low component count.
No Auxiliary winding required.
High reliability.
Complete semiconductor solution.
Significant system cost reduction.
Devices:
Part Number Description
MC33260 Power Factor Controller
MUR460 Ultrafast Recovery Rectifier (600 V)
1N5404 General Purpose Rectifier (400 V)
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22 H
RFI 1 nF/1 kV 90 V/0.1 A
FILTER
MR856
+ +
1 nF/500 V 4.7 M
47 F 47 F
1 Vin 120 pF
D1 D4
1N5404 150 F 3.9 k/6 W 4.7 k
400 V
1N4148
1N4934 MCR226
1 nF/500 V 2W 100 nF
1N4934
22 k
SYNC MR856 45 V/
47 F + + 1A
25 V
MR856 1000 F
3.3 k 1 H
1.2 k 10 pF 47 k SMT31
9 8
2.2 nF
10 7 MR852 15 V/
470 pF +
4.7 F 2.2 k 0.8 A
+ 11 6 1000 F
8.2 k 4.7 F + Lp
MC44605P
10 V
12 5
22 470 4.7 F+ 150 k
nF 1N4148 560 k
k 10 V
13 4 470 pF 10 V/
MR852 +
2.2 nF 0.3 A
Note 1
14 3
56 k
10 220 F
15 2 1N4934
1 k
270
16 1
MBR360 8 V/
470 +
56 k 0.1 1.5 A
10 k 4700 F
MOC8107 100
1.8 M
10 k 96.8 k
Vin 100 nF
TL431
1N4742A
12 V 2.7 k
2.7 k
Note 1: 500 V/8 A NChannel MOSFET
1 k 100 nF
BC237B VP
FROM P
0: STANDBY
1: NORMAL MODE
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Features:
Off power consumption: 40 mA drawn from the 8 V output in Burst mode.
Vac (110 V) about 1 watt
Vac (240 V) about 3 watts
Efficiency (pout = 85 watts)
Around 77% @ Vac (110 V)
Around 80% @ Vac (240 V)
Maximum Power limitation.
Overtemperature detection.
Winding short circuit detection.
ON Semiconductor Advantages:
Designed around high performance current mode controller.
Builtin latched disabling mode.
Complete semiconductor solution.
Devices:
Part Number Description
MC44605P High Safety Latched Mode GreenLine Controller
For (Multi) Synchronized Applications
TL431 Programmable Precision Reference
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
MBR360 Axial Lead Schottky Rectifier (60 V)
BC237B NPN Bipolar Transistor
1N5404 GeneralPurpose Rectifier (400 V)
1N4742A Zener Regulator (12 V, 1 W)
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95 Vac to
265 Vac
F1
C30 FUSE 1.6 A
100 nF
250 Vac
RFI
LF1 FILTER
C19
1 nF/1 kV
R21
4.7 M
D1D4
1N4007
C1 R16
3.8 M 220 F 68 k/2 W C15 220 pF L3
22 H
C4C5 115 V/0.45 A
1 nF/1 kV R7 D13 C26
D12
68 k/1 W 1N4148 4.7 nF
MR856 C20 D23
C16 47 F 47 F
D15
100 F
1N4148 D7
L1
1N4937
C9 R19 1 H
15 V/1.5 A
100 nF 27 k
9 8
C11 D5
C8 560 pF C21
100 pF R22 MR854
10 7 1000 F
C12 1 k
R3 C10 1 F
1 nF
22 k 11 6
MC44603AP
R18 15 k 11 V/0.5 A
12 5
5.6 k
180 k Q1 D8
13 4 C22
C7 600 V/4 A MR854
R15 1000 F
1 M 10 nF NCh
14 3
MOSFET
R20 47 R8
1 k OREGA TRANSFORMER
15 2
R4 R9 150 G619100
3.9 k THOMSON TV COMPONENTS
16 1
R5 R33 C14
2.2 k 0.31 220 pF
R14 R13
47 k 10 k
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Features:
70 W output power from 95 to 265 Vac.
Efficiency
@ 230 Vac = 86%
@ 110 Vac = 84%
Load regulation (115 Vac) = 0.8 V.
Cross regulation (115 Vac) = 0.2 V.
Frequency 20 kHz fully stable.
ON Semiconductor Advantages:
DIP16 or SO16 packaging options for controller.
Meets IEC emi radiation standards.
A narrow supply voltage design (80 W) is also available.
Devices:
Part Number Description
MC44603AP Enhanced Mixed Frequency Mode
GreenLine PWM Controller
MR856 Fast Recovery Rectifier (600 V)
MR854 Fast Recovery Rectifier (400 V)
1N4007 General Purpose Rectifier (1000 V)
1N4937 General Purpose Rectifier (600 V)
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F1
C31
100 nF
RFI C19
47283900 R F6 2N2FY
FILTER
C3
1 nF R16 4.7 M/4 kV
C11
D1D4 220 pF/500 V
1N5404
+ C5 R1 112 V/0.45 A
220 F 22 k 14 1
C4 400 V 5W D18 MR856 +
1 nF J3
C12 C13 2
C6
12 47 F/250 V 100 nF
D5 47 nF 16 V/1.5 A
1N4007 D6 630 V 3
R5 100 k R7 47 k C17 120 pF
MR856
6 1 1
J4
D12 DZ1
D7 2
1N4934 MCR226
1N4148
7 11 8 V/1 A
1 8 2 D9 MR852 3
+ C7 C14 +
1000 F/35 V
MC44608P75
Isense 22 F
2 7
16 V 10
Vcc
3 6 C9 C16 R19
470 pF 100 pF 18 k D13
630 V 1N4148
4 5
R2 600 V/6 A
10 NCH 8
MOSFET D14 D10 + R12 C18
C8 MR856 MR852
100 nF C15 1 k 100 nF
R17 9 1000 F/16 V
2.2 k
R4 3.9 k 5W
R3
0.27
R21 47 ON OFF
R9
100 k
OPT1
R10 ON = Normal mode
10 k OFF = Pulsed mode
C19
33 nF
R11 DZ3
47 k 10 V DZ2 R8
1N4740A TL431CLP 2.4 k
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Features:
Off power consumption: 300mW drawn from the 8V output in pulsed mode.
Pin = 1.3W independent of the mains.
Efficiency: 83%
Maximum power limitation.
Overtemperature detection.
Demagnetization detection.
Protection against open loop.
ON Semiconductor Advantages:
Very low component count controller.
Fail safe open feedback loop.
Programmable pulsedmode power transfer for efficient system standby mode.
Standby losses independent of the mains value.
Complete semiconductor solution.
Devices:
Part Number Description
MC44608P75 GreenLine Very High Voltage PWM Controller
TL431 Programmable Precision Reference
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
1N5404 General Purpose Rectifier (400 V)
1N4740A Zener Regulator (10 V, 1 W)
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130 to 350 V DC +
R1 D1 C3 8 V at 400 mA
+ +
220 F/
C2
150 1N4148 10 V
220 F/
D3 10 V
R3 C10
R13 MBRS240LT3
220 k 1 nF D4
100 k D5 R2
1N4937 150
1N4148
R1 M1 R11
+ MMG05N60D 113 k
120 k
C3
R5
10 F/ IC1
350 V 1k MOC8103
MC14093
R5
1.2 k 8 7 6 5
+
C8
MC33341 1 F
+
1 2 3 4 D4
C7 R9 C4 12 V
10 F 47 nF
470 R12
D2 C5 R2 20 k
R9
12 V 1 nF Q1 C9 3.9
100 Q5
MBT3946DW 1 nF
R10
0V
Features:
Universal ac input.
3 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Specialprocess IGBT (Normal IGBTs will not function properly in this application).
Off the shelf components.
SPICE model available for MC33341.
Devices:
Part Number Description
MMG05N60D Insulated Gate Bipolar Transistor in SOT223 Package
MC33341 Power Supply Battery Charger Regulator Control Circuit
MBT3946DW Dual General Purpose (Bipolar) Transistors
MBRS240LT3 Surface Mount Schottky Power Rectifier
MC14093 Quad 2Input NAND Schmitt Trigger
1N4937 GeneralPurpose Rectifier (600 V)
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RFI
FILTER R1
1/5W R3
C4C7 4.7 k
1 nF / 1000 V
C32 220 pF
120 V / 0.5 A
C1 R20
D1D4 100 F 22 k D8
D5
1N4007 5W
1N4934 MR856
C30 C31
C2 100 F 0.1 F
C17
220 F
47 nF
R2
68 k / 2 W L1 D7
C29 220 pF
R4 1 H MR856
27 k Laux 28 V / 1 A
9 8
C16 R9 D6 D9
C9 820 pF 100 pF 1 k 1N4148 MR852
10 7 C27 C28
C15 R5
1.2 k 1000 F 0.1 F
C10 1 F 1 nF
11 6 LP
R7
180 k C14
MC44603P
12 5 4.7 nF R6
R15 R8 C26 220 pF
10 k 180
15 k 15 V / 1 A
13 4
C11
Note 1 D10
1 nF
14 3 MR852
R10 R26 C25 C24
R16 10 1 k 1000 F 0.1 F
10 k 15 2
16 1 C23 220 pF
R18 R19 R14 8V/1A
C13
27 k 10 k 2 X 0.56 //
100 nF D11
MR852
C21 C22
1000 F 0.1 F
R17
10 k R24
270 R23
117.5 k
R21 C19
10 k 100 nF D14
1N4733
C20
R25 C12 33 nF
1 k 6.8 nF TL431
Note 1: 600 V/ 6 A NChannel MOSFET R22
2.5 k
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Features:
Offline operation from 180 V to 280 Vac mains.
Fixed frquency and standby mode.
Automatically changes operating mode based on load requirements.
Precise limiting of maximum power in fixed frequency mode.
ON Semiconductor Advantages:
Builtin protection circuitry for current limitation, overvoltage detection, foldback, demagnetization and softstart.
Reduced frequency in standby mode.
Devices:
Part Number Description
MC44603P Enhanced Mixed Frequency Mode GreenLine PWM Controller
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
TL431 Programmable Precision Reference
1N4733A Zener Voltage Regulator Diode (5.1 V)
1N4007 General Purpose Rectifier (1000 V)
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C11 4.7 nF
1200 V
PTUBE =
55 W
L1 1.6 mH T1A
FT063
Q2 Q3
MJE18004D2 MJE18004D2
R13 R14
2.2 R 2.2 R
C9 R11 R12
C8
2.2 nF 4.7 R 4.7 R
2.2 nF
DIAC
C6 10 nF C7 10 nF
NOTES: * All resistors are 5%, 0.25 W
D4 unless otherwise noted
R10 * All capacitors are Polycarbonate, 63 V,
T1B T1C 10%, unless otherwise noted
10 R
D3 1N4007
C5 0.22 F
R9
330 k
C4 47 F
+
450 V
R7 1.8 M P1 20 k
C15 100 nF
Q1
500 V/4 A NCh 1N5407 1N5407
D2 MUR180E MOSFET R6 1.0 R
3 1 D8 D9
C16
630 V
2 R5 1.0 R 47 nF
1N5407
T2 AGND
R4 22 k D7 D6
7 1N5407
5 4
+ C3 1.0 F FILTER
MC34262
2
C2
U1
D1 330 F 6 C17 47 nF
MUR120 25 V 1
8 630 V
R3 3 C1 10 nF
100 k/1.0 W
R2 1.2 M FUSE
LINE
R1 12 k 220 V
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Features:
Easy to implement circuit to avoid thermal runaway when fluorescent lamp does not strike.
ON Semiconductor Advantages:
Power devices do not have to be oversized lower cost solution.
Includes power factor correction.
Devices:
Part Number Description
MC34262 Power Factor Controller
MUR120 Ultrafast Rectifier (200 V)
MJE18004D2 High Voltage Planar Bipolar Power Transistor (100 V)
1N4007 General Purpose Diode (1000 V)
1N5240B Zener Voltage Regulator Diode (10 V)
1N5407 Rectifier (3 A, 800 V)
ON Semiconductors H2BIP process integrates a diode and bipolar transistor for a single package solution.
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T0.2x
J1 D1
1 F1 250R
2 + 1N4140 R4 5V
LINE C1 R8 D8 C5 + 4 k
10 F/350 V
100 D9 J2
10 V R1 1N4140 T1 1 F
5 6 BZX84/5 V
1
220 D3 100 F +
R2 4 D7 2
+ 7 C5
R5 3
D2 C2 20 F 4 k MURS320T3
D4 47 k R14
R6
BZX84/18V 1N4140 22 k
47 k
R3 C4 U2 8 7 6 5
1 nF
VSI
CSI
DO
VCC
22 k D6 2
U1 8 7 1 1N4140 D5 MURS160T3
Line VCC ICD MC33341
R4 Q1
CMP
GND
6
CTA
MC33364 600 V/1 A R13
CSI
5
GND 2 330 NCh MOSFET 12 k
C3 R7 1 2 3 4
Vref FL
2.7 C7
C3 4 3 1SO1 33 nF R12
5 2 R10
100 nF R11 10 k
100 R
MOC0102
1 0.25
4
Figure 50. ACDC Battery Charger Constant Current with Voltage Limit
Features:
Universal ac input.
9.5 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Off the shelf components
SPICE model available for MC33341
Devices:
Part Number Description
MC33341 Power Supply Battery Charger Regulator Control Circuit
MC33364 Critical Conduction SMPS Controller
MURS160T3 Surface Mount Ultrafast Rectifier (600 V)
MURS320T3 Surface Mount Ultrafast Rectifier (200 V)
BZX84C5V1LT1 Zener Voltage Regulator Diode (5.1 V)
BZX84/18V Zener Voltage Regulator Diode (MMSZ18T1)
Transformer For details consult AN1600
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These older Application Notes may contain part numbers that are no longer available, but the applications information
may still be helpful in designing an SMPS. They are available through the Literature Distribution Center for
ON Semiconductor at 8003443860 or 3036752175 or by email at ONlit@hibbertco.com.
AN873 Understanding Power Transistor Dynamic Behavior: dv/dt Effects on Switching RBSOA
AN875 Power Transistor Safe Operating Area: Special Consideration for Switching Power Supplies
AN913 Designing with TMOS Power MOSFETs
AN915 Characterizing CollectortoEmitter and DraintoSource Diodes for Switchmode Applications
AN918 Paralleling Power MOSFETs in Switching Applications
AN920 Theory and Applications of the MC34063 and A78S40 Switching Regulator Control Circuits
AN929 Insuring Reliable Performance from Power MOSFETs
AN952 Ultrafast Recovery Rectifiers Extend Power Transistor SOA
AN1040 Mounting Considerations for Power Semiconductors
AN1043 SPICE Model for TMOS Power MOSFETs
AN1080 ExternalSync Power Supply with Universal Input Voltage Range for Monitors
AN1083 Basic Thermal Management of Power Semiconductors
AN1090 Understanding and Predicting Power MOSFET Switching Behavior
AN1320 300 Watt, 100 kHz Converter Utilizes Economical Bipolar Planar Power Transistors
The following Application Notes are available directly from the ON Semiconductor website
(http://onsemi.com).
AN1327 Very Wide Input Voltage Range, Offline Flyback Switching Power Supply
AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications
AN1541 Introduction to Insulated Gate Bipolar Transistor
AN1542 Active Inrush Current Limiting Using MOSFETs
AN1543 Electronic Lamp Ballast Design
AN1547 A DC to DC Converter for Notebook Computers Using HDTMOS and Synchronous Rectification
AN1570 Basic Semiconductor Thermal Measurement
AN1576 Reduce Compact Fluorescent Cost with Motorolas (ON Semiconductor) IGBTs for Lighting
AN1577 Motorolas (ON Semiconductor) D2 Series Transistors for Fluorescent Converters
AN1593 Low Cost 1.0 A Current Source for Battery Chargers
AN1594 Critical Conduction Mode, Flyback Switching Power Supply Using the MC33364
AN1600 ACDC Battery Charger Constant Current with Voltage Limit
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Device Models
Device models for SMPS circuits (MC33363 and MC33365), power transistors, rectifiers and other discrete products
are available through ON Semiconductors website or by contacting your local sales office.
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SMPSRM
Baliga, B. Jayant,
Power Semiconductor Devices, PWS Publishing Co., Boston, 1996. 624 pages.
Brown, Marty,
Practical Switching Power Supply Design, Academic Press, Harcourt Brace Jovanovich, 1990. 240 pages.
Brown, Marty
Power Supply Cookbook, EDN Series for Design Engineers, ON Semiconductor Series in Solid State Electronics,
ButterworthHeinmann, MA, 1994. 238 pages
Chrysiss, G. C.,
High Frequency Switching Power Supplies: Theory and Design, Second Edition, McGrawHill, 1989. 287 pages
Gottlieb, Irving M.,
Power Supplies, Switching Regulators, Inverters, and Converters, 2nd Edition, TAB Books, 1994. 479 pages.
Kassakian, John G., Martin F. Schlect, and George C. Verghese,
Principles of Power Electronics, AddisonWesley, 1991. 738 pages.
Lee, YimShu,
ComputerAided Analysis and Design of SwitchMode Power Supplies, Marcel Dekker, Inc., NY, 1993
Lenk, John D.,
Simplified Design of Switching Power Supplies, EDN Series for Design Engineers, ButterworthHeinmann, MA,
1994. 221 pages.
McLyman, C. W. T.,
Designing Magnetic Components for High Frequency DCDC Converters, KG Magnetics, San Marino, CA, 1993.
433 pages, 146 figures, 32 tables
Mitchell, Daniel,
SmallSignal MathCAD Design Aids, e/j Bloom Associates, 115 Duran Drive, San Rafael, Ca 949032317,
4154928443, 1992. Computer disk included.
Mohan, Ned, Tore M. Undeland, William P. Robbins,
Power Electronics: Converter, Applications and Design, 2nd Edition, Wiley, 1995. 802 pages
Paice, Derek A.,
Power Electronic Converter Harmonics, Multipulse Methods for Clean Power, IEEE Press, 1995. 224 pages.
Whittington, H. W.,
Switched Mode Power Supplies: Design and Construction, 2nd Edition, Wiley, 1996 224 pages.
Basso, Christophe,
SwitchMode Power Supply SPICE Cookbook, McGrawHill, 2001. CDROM included. 255 pages.
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SMPSRM/D
Rev. 3, Jul-2002
SWITCHMODE Power
Supply Reference Manual
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for
any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use
SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of
the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada For additional information, please contact your local Sales
Representative
SMPSRM/D