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Keystone PEH Corp_2-17.indd
2-17.indd 1 1 12/30/16
2/16/17 4:27
4:02 PM
POWER ELECTRONICS
AN ANNUAL RITUAL takes place in the upper echelons partly because the SiC version only needed a two-
of the power electronics world. At the Applied Power level bridge compared to the three-level design that
Electronics Conference (APEC), considered a premier the silicon version required. “IGBTs typically force
forum for applied power electronics, researchers present you to use a three-level bridge. SiC devices can go
new ideas for power converters. Typically, these ideas up to ten times faster with about the same losses as
are neither straightforward nor easy to understand. And IGBTs. That switching speed lets them operate with
there is generally nothing intuitive about them. So other less filtering,” Stevanovic says.
researchers intrigued by these concepts spend a lot of Attendees can also hear about SiC from Dr.
time in the ensuing 12 months characterizing the most Victor Veliadis, CTO and Interim Deputy Director
promising topologies and circuits mentioned at APEC. of PowerAmerica, a DoE manufacturing institute
At APEC the following year, conference-goers can start to working on advanced power conversion techniques.
really understand how the original circuits behave when Veliadis and his PowerAmerica colleagues will be
the new results are presented. covering some of the difficulties they’ve managed
This ritual is one of the reasons APEC has the to overcome in devising SiC devices and will
reputation as a forum attended by practitioners who can discuss how SiC circuits excel compared to those
analyze knotty technical problems. And in that regard, using conventional silicon transistors. “A lot of
there are a couple of areas addressed in this year’s the difficulty relates to getting processes that are
upcoming APEC that are worth mentioning. specific to SiC and taking them from an R & D
One of them concerns the promising field of silicon- demonstration into a real manufacturing process,”
carbide MOSFETs. Ljubisa Stevanovic, CTO of Silicon he says.
Carbide Works at GE Global Research, APEC’s reputation for discussions of
will talk about the SiC devices GE has tough converter topologies will also get some
devised for megawatt-scale industrial reinforcement from a presentation by Joel Steenis
applications. “The toughest part and Alex Dumais, two application engineers from
of applying SiC is that it is not Microchip Technology Inc. They will be covering how
a one-for-one replacement for to devise a fully digital LLC resonant converter. “It
silicon IGBTs,” says Stevanovic. is definitely a challenging topology,” says Dumais.
“So you can’t just remove the “The biggest issue today is modeling it. Joel has
LEE TESCHLER IGBTs from a solar inverter done months of research on accurate modeling
EXECUTIVE EDITOR and plug in a SiC MOSFET. so engineers can design their own converters.
Instead of replacing an IGBT, The problem is the LLC circuit doesn’t behave in
you need to take advantage way that lends itself to modeling with state-space
of the switching speed SiC averaging, a quite common approach.”
transistors can provide.” Dumais and Steenis say LLC converters are
One of things Stevanovic getting a lot of interest for powering servers and
will cover at APEC is a solar telecom systems because they are efficient and use
inverter based on silicon IGBTs fewer components than alternatives.
switching at 2.5 kHz that was recast These are just a few highlights. All indications
with SiC MOSFETs operating at 8 kHz. are that APEC will not lack for discussions of
The resulting inverter circuits were simpler knotty problems.
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inside
Cover photos courtesy of iStock.
39 08
43 30
02 The tough problems in power design 30 The different routes to measuring
electrical efficiency
08 Teardown: Inside Ikea's smart LED bulb Power measurements made with conventional meters can be
Press a button on the wall and a wireless connection tells this drastically inaccurate. Here's how to decide when to bring in a
LED bulb what to do. specialized power analyzer.
130 years later, Sager Electronics has grown into a leading North
American distributor of interconnect, power and electromechanical
electronic components. Acquired 5 years ago by TTI, Inc., a Berkshire
130
YEARS
Hathaway, Inc. company, Sager continues to operate with the same
dedication to its core values – integrity, service and adaptability.
1887 - 2017
Celebrating 130 Years of Distributing Confidence®
TEARDOWN:
Inside Ikea’s
smart LED bulb
HANDBOOK
LE LA N D TE S CHLE R | EX EC U T IV E EDIT OR
Press a button on the wall and A NEW LED BULB from the furniture maker Ikea of Sweden
is called the TRÅDFI. Now available in Europe, it’s expected
a wireless connection tells this to hit the U.S. soon. It comes with its own remote controller
LED bulb what to do. which mounts to the wall and uses a wireless connection to
switch the bulb on and off, adjust bulb color temperature and
dimming level.
As smart LED bulbs go, this one is pretty simple. It
doesn’t incorporate any sort of smart phone app and can’t
be controlled over the Internet, like some other smart bulbs
we’ve seen.
The remote which controls the LED bulb has what seems
like an elegant way of mounting to the wall. A base for the
remote attaches to the wall either with screws or adhesive.
Then the remote itself fits into the base, held on with a
magnet. This scheme lets the user remove the remote to
change its battery when the need arises and gives the wall-
mounted remote a sleek look. The battery is a CR 2032, a
widely available 4.3-V lithium coin cell.
The Ikea bulb talks to the remote in a way resembling
that used by many other smart bulbs: The designers put the
wireless chip on a separate circuit board that solders to the
main board holding the driver electronics. In the case of the
One style has a slightly darker amber color than the other. So
the two strings evidently are wired so they can be operated
independently. And that’s probably how the LED bulb manages
dimming and changing its color temperature. It judiciously lowers
or raises the current to either of the two strings to modulate both
the amount of light output and probably the color temperature
as well.
However, the use of two LED strings presents a problem from
the standpoint of driver design. Because most LED bulbs only use
one string, most LED driver chips for use in LED bulbs can drive
just one LED string. A bulb carrying two LED strings can’t easily
use a driver chip designed to handle just one.
Though there are numerous chips available for driving
multiple strings of LEDs, the applications most of these chips
address are in LCD backlighting or related display-type uses. They
really aren’t set up for light bulbs. So they really aren’t appropriate
for what Ikea is doing with this light bulb.
Cutting off the acrylic bulb reveals the LED board. Visible here is the slot
through which the wireless board antenna pokes through. Also evident are
the two connectors used to mate the LED board with the bulb electronics –
unusual in that most bulbs just use soldered connections. Also note LEDs that
are light amber and dark amber. Dark and light LEDs are in separate strings,
likely done as a way to implement color temperature changes and dimming.
Removing the LED board (left) reveals the thermal grease used between the
plate and the heat sink and the connector pins to the LED plate, coming from
the epoxied electronics in the bulb base.
References
Silicon Labs
EFR32MG1 Mighty Gecko SoC
www.silabs.com/Support%20Docu-
ments/TechnicalDocs/EFR32MG1-Data-
Components found on the bulb PCB seem to indicate the bulb
uses active rather than passive PFC. Sheet.pdf
bottom view
The bulb PCB doesn’t contain a standard LED driver chip, but components
found on the board seem to indicate the use of separate buck converters for
each of the two LED strings, and for use of active power-factor correction. A
side view of the main PCB (top) shows the wireless board. Its chip had metal
shielding which has been removed in this image.
Modeling of
losses in magnetic
HANDBOOK
components
R A NJ I TH BR A M A N PA L L I | W U RT H EL EC T RON IK
Inductors operate according to the laws of Ampere This characteristic helps contain the flux within the
and Faraday. Ampere’s Law relates current in the coil inductor’s core, which in turn enables the construction
or turns of wire to the magnetic field in the core of the of inductors with high values and small size. This
inductor. As an approximation, one assumes the magnetic advantage is evident in the inductance equation above,
field in the inductor’s core is uniform throughout the core in which a core material with a high permeability value
length (le ). That assumption lets us write Ampere’s law as allows for a smaller cross-sectional area.
In a SMPS the peak magnetic flux density can be
written as
(1)
(2)
where Pv is the core loss (hysteresis and eddy current loss) for unit
volume, f is the frequency, Bpk is peak flux density of a sinusoidal
excitation, K, α and β are the constants derived from core loss
graph. The data given for core losses usually includes the effects of feq being the equivalent frequency with respect
both hysteresis and core eddy currents. to change in the duty cycle (DC) of non-
Core-loss measurements are difficult because they require sinusoidal waveforms.
complicated setups for measuring flux density and because they The MSE has some disadvantages. The
involve the estimation of hysteresis-loop areas. For plotting core loss Generalized Steinmetz Equation (GSE) was
charts, a sine wave is applied to a toroidal (ring) core with one or developed to overcome them:
two one-turn coil windings. Then the constants are calculated using
the graph of core loss graph plotted against peak flux density.
The major drawback of the Steinmetz equation is that it is
mostly valid for sinusoidal excitation. This is a huge drawback
because in most power electronic applications, the inductor is
usually exposed to non-sinusoidal flux waveforms. There are
other models which separate hysteresis and eddy current loss As the GSE and MSE core loss charts
to overcome the problem of non-sinusoidal waveforms. But the are also based on sinusoidal excitation, they
empirical Steinmetz equation has proven to be the most useful tool also have some limitations. And some core
for sinusoidal flux-waveforms because it provides better accuracy manufacturers also have devised their own
and is quite simple to use. Hence there are extensions to this models which work best with the cores they
power equation to make it more accurate for non-sinusoidal flux themselves manufacture.
waveforms. The major disadvantages of the Steinmetz
and its extended models include the fact that
they depend on empirical data of the core
manufacturer (for core loss charts). This means
the firm manufacturing the passive component
is challenging to estimate core loss using existing produce the empirical data. This empirical data is then
models for iron powder materials and metal alloys, used to create an equation to calculate ac loss in the form
and the accuracy of these efforts varies widely. of PAC=f(∆I,freq, DC, k1, k2).
As well, Steinmetz models don’t factor in losses The hysteresis loops shown in the typical core
in the component winding caused by skin effects, material data sheets represent the core overdriven by a
proximity effects, and similar issues. Nor do these sinusoidal waveform from + to – saturation. The hysteresis
methodologies include ac losses of the windings. loop area represents energy loss. This is the same
Finally, it is not practical to estimate losses in approach used to produce empirical data for the core loss
components which use more than one magnetic charts.
material. Of course, in an SMPS application, the core is usually
driven by a much smaller rectangular waveform with peak
A new ac loss model flux density limited by core losses to a minor hysteresis
Because of such difficulties, Würth Elektronik eiSos loop. Power loss depends on how many times per
has developed a state-of-the-art model aimed at an second the hysteresis loop is traversed. Thus, hysteresis
easier optimization of systems containing inductors. loss varies directly with frequency. The hysteresis loop
The model is based on empirical data derived from changes shape somewhat with wave shape, current or
real time application set ups. voltage drive, and temperature. This variability, makes it
In the Würth model the total loss of the hard to predict core loss accurately.
inductor is divided into two separate ac and dc The minor loop area depends on the voltage above
losses. The power dissipation is due to dc current the Inductor. Würth Elektronik’s ac loss model uses his
in the inductor windings and is listed as the dc loss. minor loop in a point-of-operation approach to produce
of losses for any given duty cycle. The model is also accurate
over a wide range of frequencies (10 kHz to 10 MHz) as the
constants of the power equation are derived over a wide range
with respect to the flux swing. And the model works for even
small changes in core material and winding structure.
Moreover, Würth Elektronik’s ac loss model is valid
for components which have more than one material. It will
accurately estimate losses of iron powder and metal alloy
materials and is valid for any core shape and winding structure.
References
And it includes dc winding losses.
Würth Elektronik model has been validated and compared Magnetics Design for Switching
with existing models and measured data. The ac loss for various Power Supplies, by Lloyd H.
materials like WE-Super flux, iron powder, NiZn, MnZn, and so Dixon. Available online from Texas
forth, are measured at a wide range of duty cycles, frequencies Instruments,
www.training.ti.com/
and other parameters compared with theoretical models.
The Würth Elektronik’s ac loss model is accurate and On the law of hysteresis, by C.P.
practical. The model has been experimentally verified over a Steinmetz. Available online from
wide range of frequency, ripple currents and duty cycles and several sources including here:
proved to be robust. This ac loss model is implemented in an www.garagehacker.com/files/C.P%20
Steinmetz%20-%20On%20the%20
online selection tool called Redexpert, eliminating the need for
Law%20of%20Hysteresis%20-%20
design engineers to request core loss charts. Pt%201.pdf
Better high-frequency
power design through
EM simulation
JOHN RIC E | TE X A S I N S TRU M E N TS I NC. .
Here’s how a 3D EM HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in
simulation can be used to the early 1980s and are touted for their exceptional switching qualities. These so-
called heterojunction, field effect transistors (FETs) were originally developed for
accurately gage gate-driver high-frequency RF power amplifiers. More recently, however, these heterojunction
trace inductance. transistors have evolved to address a broader scope of high-frequency, high-voltage
and high-current power applications.
Today power transistors built on wide-bandgap (WBG) semiconductor materials
Gate charge compared including silicon carbide (SiC) and gallium nitride (GaN) are
being used to realize higher power efficiency and higher power
density at a lower cost. In this regard, 3D electromagnetic
(EM) field solvers help isolate and resolve printed circuit board
(PCB) and component parasitic coupling that otherwise would
compromise the wide bandgap (WBG) transistor advantage.
MOSFETs built-in silicon and the latest WBG transistors
are both FETs. As such, the turn-on and turn-off behavior is
largely a function the device’s composite gate charge. Until
the gate-drain “miller capacitance” of the FET is charged, the
device remains in a high on-resistance state. The gate driver
Gate charge of a 650-V enhancement mode GaN transistor sources and sinks current into the gate terminal to move up
(green) and a super junction, silicon MOSFET (orange) of
and down the device’s gate charge curve. The rate at which this
comparable RDSON. Until the gate-drain “miller capaci-
tance” of the FET is charged, the device remains in a high happens is determined by the driver output current and the
on-resistance state. device gate charge. It is the ultralow gate charge characteristic
of WBG transistors that facilitates high-frequency operation in
high-power applications, reducing both power stage and gate
Voltage rise in a WBG buck converter
driver losses in hard-switch applications.
Also evident from a gate charge curve is that a full
saturation of the vertically-structured, super-junction transistor
requires nearly twice the gate potential compared with the
laterally-structured GaN device. In fact, gate-source voltages
exceeding about 6 V can damage some GaN transistors. GaN
FETs with a low-voltage gate oxide capability need specialized
GaN FET gate drivers like the Texas Instruments LM5113.
As we will see, the key requirement in advancing high-
frequency power is to minimize distributed parasitic coupling.
Switch-node voltage rise time (10-90%) transition to 48 V,
To help address this need, TI introduced the LMG3410. This
1.7 nsec for a 48 V to 1 V buck converter. 600-V, 12-A device integrates a gate driver with a depletion-
Enabling Robust
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IDT PEH 2-17.indd 25 2/16/17 4:31 PM
POWER ELECTRONICS
vertical height, h, above the reference plane. At h =
30 mil above the reference plane, the trace would
have about 750 pH of inductance. Reducing the
height, h, to 3 mils would result in a proportional
reduction of one-tenth the inductance or 75 pH.
Clearly, minimizing stack-up height is essential
for reducing PCB trace inductance. Note this
first-order approximation does not account for
the influence of other material including co-planar
HANDBOOK
Board mesh of low-side gate sink drive (a); and port assignment
At left, plots of the entire loop inductance with and without R24, a 0402, to calculate partial inductance (b) for the EPC920X half-bridge
zero-Ohm gate resistor. At right, the partial inductance of the segment power stage.
illustrated in the board mesh of low-side gate sink drive. It is important to
point out that the physical dimensions of any discrete components (R24 in
this case) and even the analysis ports will affect the inductance calculation.
An illustration of how “ports” are assigned to all relevant copper and components,
including the LM5113 gate driver, GaN transistors and discrete components. With this
assignment complete, SPICE/IBIS models (or scope captured waveforms) can then be
used to excite and interact with the EM-simulated PCB to determine high-frequency circuit
behavior. In this way all distributed PCB and component parasitic elements are consid-
ered; you can even determine the PCB electromagnetic interference (EMI) patterns
switching speeds; many designers who want to use GaN technology won’t
have the same kind of sensitivities.
A 3D EM simulation of a PCB section of the PCB helps to precisely
calculate the gate drive loop inductance. The analysis here focuses on the
References
interconnect impedance associated with the low-side copper from the gate LMG3410 data sheet
of Q2 through R24 to the LM5113 gate driver sink pin. The board design http://www.ti.com/lit/ds/symlink/lmg3410.pdf
was exported from the Altium Designer layout tool as an OBD++ file and
Rice, John. Are you accurately measuring the
imported into CST Microwave Studio. OBD++ files export all physical picosecond rise time of your GaN device?,
properties of the board including the layer stack-up. To minimize analysis Power House TI E2E Community Blog, July
run-time, we mesh only the relevant portion of a PCB, in this case the low- 1, 2015
side gate driver. www.e2e.ti.com/blogs_/b/powerhouse/
archive/2015/07/01/are-you-accurately-
The 3D EM simulation of the section took four minutes to run on a measuring-the-picosecond-rise-time-of-your-
laptop computer with four cores. To calculate partial inductance, we assign gan-device
current ports to various copper segments of the loop. After meshing and
solving the EM coupling mechanisms, we apply a broadband current How to Drive GaN Enhancement Mode
Power Switching Transistors, GaN Systems
excitation from 500 kHz to 500 MHz to the gate drive loop to determine Application note, GN001 Rev 2014-10-21
the inductance. www.tinyurl.com/js2ymon
The real power of a 3D EM simulator comes into play with an EM
analysis of the entire PCB. The board can then be excited within the EM CST Microwave Studio
www.cst.com/Products/CSTMWS
simulator environment using waveforms representative of the application.
This “co-simulation” links all the physical coupling mechanisms of the PCB Rice, John. Get into electromagnetic
with a circuit-level SPICE analysis. In this way an accurate assessment the compliance with GaN. TI E2E Community
board’s high-frequency circuit behavior can be realized. Blog, August 26, 2015
The learning curve of any simulation tool can be steep; this is www.e2e.ti.com/blogs_/b/powerhouse/
archive/2015/08/26/get-into-electromagnetic-
especially true with 3D EM simulation. Application of these tools requires compliance-with-gan
a deep understanding of the EM simulator and the end application. If
possible, it’s best to pick a tool that has an intuitive user interface, practical Getting Ahead with Coupled 3D Field and
application material and excellent technical support. I found all of these Circuit Simulation, Computer Simulation
Technology (CST) Webinar
at Computer Simulation Technology (CST) and especially appreciated the www.cst.com/events/webinars/2016-02-18-
excellent technical support I received from Patrick DeRoy. field-circuit-simulation
The basics of
thermistors in
thermal management
HANDBOOK
ALL SEMICONDUCTORS generate Some thermal dissipation happens by Thermistors are good
thermal losses, of course. Thermal convection, but the limits of this method are candidates for detecting
losses in power semiconductors quickly reached – especially with small chips temperature limits.
can range from a few watts to that dissipate a lot of power. Consequently, Thermistors can be positive
multiple kilowatts. In heatsinks, the it is impossible to guarantee – and not wise temperature coefficient (PTC)
conductive capability is typically to rely on – convection cooling. Furthermore, or negative temperature
measured in °K/W. The smaller heatsinks are often too big for compact coefficient (NTC) devices.
the conductive capability value, designs. The best course of action is to With NTC thermistors,
the better the thermal dissipation actively dissipate heat via fans or combined air resistance falls with rising
capacity. and water-cooled heat exchangers, which are temperature. In PTC
Three entities are necessary often operated without regulation. thermistors, the resistance
to determine the right heatsink In many electronic power supplies increases as temperature
for a power semiconductor: the and converters, power dissipation is load- drops. On exceeding a
thermal contact resistance, the related. To improve the energy balance and specific temperature, PTC
maximum heat dissipation in the minimize the generation of noise, the active thermistors show a sharp
semiconductor, and the highest thermal dissipation switches on only when the rise in resistance, making
expected ambient temperature. electronics hits a defined temperature limit. them useful as temperature
IT’S IMPORTANT to measure energy efficiency accurately overall efficiency becomes quite challenging as
in applications running from limited power sources such as it becomes necessary to measure tiny differences
batteries. And an understanding of how a device consumes in power-in and power-out to determine the
energy can lead to a better understanding of operational energy lost.
costs regardless of whether the source of energy is limited First a few basics. Electrical power is
or not. Server farms, for example, consume enough energy usually calculated by measuring both voltage
to influence power consumption on a national scale, and the and current and then calculating the product
operational costs of the server farm are set to a great degree of the two. If the power is pure dc, this
by the cost of the power to run the servers. calculation is fairly straightforward. The
High accuracy is often a requirement in measurements measurement becomes more complex with ac
of energy efficiency. For example, developers may have to power because it involves phase relationships,
detect small changes in power consumption to determine and often engineers turn to power analyzers
if a new design hits overall device efficiency goals. As for these measurements. But regardless of the
efficiency approaches 90% to 100%, the measurement of
The instantaneous measurements are then shape or skew of the voltage or current waveforms, the answer will
integrated or averaged over the time interval be correct as long as you are within the bandwidth of the power
of interest to determine the overall power analyzer (typically 10 kHz or higher).
consumption.
So much for dynamics on a macro level, Measuring static dc/dc converter efficiency
where it is obvious the power is varying. Now Under static conditions (basically, a constant load and supply of
consider power on a microscale. Most power power), it is relatively easy to measure the efficiency of a dc/dc
converters today are switch-mode devices converter. The inputs and outputs are dc, and if they not changing,
(or switching power supplies). The input then a DMM as a voltmeter can measure the input voltage. You can
HANDBOOK
voltage to the switch-mode converter can be also use the DMM as an ammeter to measure average input current
constant (dc or ac RMS), but the current will and calculate average input power. Similarly, a DMM can measure
not be. The switch-mode power supply draws output voltage and current. With all measurements in steady state
current nonlinearly – it does not look like a and in the form of dc, there is no concern about time skew between
resistive load. It draws current in pulses if the voltage and the current measurement or between input and
running from dc or in the form of non-sinusoid output power measurement.
waveforms if running from ac. DMMs can offer outstanding measurement accuracy so the
These nonsinusoidal waveforms make accuracy of efficiency measurements based on their readings will be
it difficult to calculate the instantaneous high as well. For example, in a Keysight 34460A DMM, the basic
power accurately. To properly measure power, measurement accuracy of 0.0025% for dc voltage and 0.007% for dc
you must simultaneously capture voltage current. The efficiency calculations based on these readings can be
and current, point by point, multiply them on the order of 0.1%, depending on the voltage and current range.
together to get an instantaneous power, Now consider the case where conditions on the dc/dc
then integrate the resulting relationship to converter change, as with a variable input voltage or variable load
determine the real power consumption. current. Now you must treat the converter as an ac device. When
Effectively, a power analyzer goes inputs or outputs are time varying, the DMM method will not always
through the above steps. That is why a work. Voltage and current will most likely not be in phase. An RMS
power analyzer is the weapon of choice when voltmeter can probably measure ac input voltage accurately, as it is
measuring power. Regardless of the wave most likely a sine wave. The current waveform will most likely not be
a sine wave. It may have a high crest factor or other Use of a power analyzer is
non-sinusoidal qualities, thus making RMS current a preferred method to measure
References
measurements challenging. power converter efficiency.
A four-channel oscilloscope can be a good These instruments are designed
tool for measuring efficiency. Most certainly, all specifically to make accurate,
four channels will simultaneously measure input simultaneous measurements of Keysight PA2200 Series
voltage, input current, output voltage, and output voltage and current. Multi-channel IntegraVision Power Analyzer,
www.literature.cdn.keysight.com/litweb/
current. However, oscilloscopes are typically ground analyzers can simultaneously pdf/5992-0324EN.pdf?id=2544198
referenced, which could pose a challenge for measure both input and output
measuring some power converters. But the problem power on a single-phase or multi-
can be addressed through use of differential voltage phase ac or dc signal.
probes and current probes. Most power analyzers are floating, capable of
However, the oscilloscope does have some measuring hundreds of volts without differential
limitations. In general, an oscilloscope has about probes, and can measure current directly. Power
3% error in its vertical measurements due to both the analyzers such as the Keysight PA2200 Series
oscilloscope gain error and the external probe error. IntegraVision Power Analyzer easily measure power
This 3% error will cause the oscilloscope to struggle conversion efficiency with high accuracy. With a
to accurately measure efficiencies over 90% or to power analyzer, you can expect to measure power
see incremental changes of 5% or less in efficiency. conversion efficiency with 0.25% to 0.5% accuracy.
For measuring lower-efficiency devices, or to get a Power analyzers also handle the complexity of multi-
general sense for the efficiency, an oscilloscope is a phase ac power measurement.
handy tool.
Features: Applications:
• Ultra low on-resistance RDS(on) and gate charge Qg • High-efficiency switched-mode and resonant-mode power supplies
• Fast body diode • Electric vehicle battery chargers
• Superior dv/dt ruggedness • AC and DC motor drives
• Avalanche capability • DC-DC converters
• Low package inductance • Robotics and servo control
PLUS264
• Power Factor Correction (PFC) circuits
• Renewable energy inverters
www.ixys.com
Secrets of
measuring currents
above 50 A
HANDBOOK
by adding thermal vias (that connect all metal The small footprint of the ACS780 in
layers) surrounding the Allegro IC integrated the LR package and its ease of surface- Via count: 100%
conductor solder pads. mount assembly brings advantages for (original design)
Of the three methods, adding thermal vias measuring currents exceeding 100 A. The
has the least impact on PCB area and cost, approach is to reroute a portion of the
and it is easy to implement. To understand current to be sensed through a trace on
the impact of vias and how many to use, a the PCB. Thus, a portion of the current
simulation was run on the ACS780LR evaluation to be sensed does not pass through the
board using a natural convection model. Allegro IC. Here, the current ratio of the
The model assumed an air enclosure of splitter is critical. It must be set so the
300×300×300 mm with the enclosure wall set maximum possible current flows through
to 25°C. The injection of current caused the the sensor (while the sensor remains in the
steady-state die temperature to reach 150°C. thermal safe operating zone) to get the best
Reducing the number of thermal vias by accuracy.
50% (18 instead of 36 vias per solder pad), A simulation illustrates the thermal
brought a 5.6°C rise in die temperature to capability of this approach. Suppose we Via count: 50%
156°C. Removing all thermal vias caused a have a board with a current ratio of 6.7:1
33.5°C rise in die temperature to 183.5°C. (that is, current through trace: current
These results highlight the significant benefits through sensor) and the following specifications: six copper layers
of having thermal vias, while showing that a (top and bottom layer thickness of two-ounce (70 μm), inner
small reduction in the number of vias (much less layers of three-ounce (105 μm)), an FR4 substrate, 36 thermal
than a 50% reduction relative to the Allegro vias of 0.2-mm diameter around each pad, and 5-mm diameter
evaluation board) should have a minimal impact through-holes for current injection on the PCB. An aluminum heat
on the thermal performance. spreader of 94 × 70 mm connects under the PCB.
Power modules
lessen the load on
internal combustion
engines
THOMAS YIM | ON S E M ICON DUCTOR
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It is an automotive-qualified (AECQ100/101)
integrated power module containing a three-
phase bridge comprising six power switches
that each combine a 650-V high-efficiency IGBT
and a freewheeling diode having soft recovery
characteristics and a low reverse-recovery current.
The IGBT’s 650-V rating allows operation from a
bus voltage of up to about 400 V with adequate
safety margin. This high-voltage capability is
important because the industry increasingly
contemplates using high-voltage buses to
distribute power to electrical loads at low current.
Three individual single-channel high-voltage
ICs (HVICs) control the gates of the high-side
IGBTs, and a single low-voltage IC (LVIC) with
three output channels controls the gates of the
low-side IGBTs.
The FAM65V05DF1 block diagram illustrates the integration of
The LVIC and HVICs in the FAM65V05DF1
three HVICs, a three-channel LVIC and power semiconductors.
implement individual under-voltage lockout
(UVLO) circuitry to protect the IGBTs against
operation with too little gate-driving voltage. Bringing power semiconductors, drivers and
Over-current protection circuitry is implemented protection circuitry together in a single module
in the LVIC, with a soft turn-off feature that has enabled the realization of a complete three-
protects IGBTs from potentially damaging voltage phase bridge and driver in a footprint of just 44
surges by decaying the gate voltage instead of × 26 mm. This represents a 30% saving in PCB
turning the devices off abruptly. The module’s space compared to a conventional controller
temperature sensor, used to coordinate thermal implemented using individual automotive-
protection, is also integrated in the LVIC. In qualified components (discrete IGBT + external
addition, the LVIC has a fault output, which can three-phase gate driver, etc.).
be used to activate system-level protection for In a nutshell, energy-efficient integrated
optimum reliability. high-voltage power modules help eliminate
For automotive use, module thermal power-sapping mechanical actuators typically
performance is extremely important. Peak driven by the engine crank. Field-stop-trench
ambient temperatures can be high, especially for IGBTs, STEALTH diodes, HVIC, LVIC and DBC
modules sitting near the engine. technologies are the major enablers for this new
Size and cost constraints must also be taken generation of auto IPMs.
into consideration. A DBC substrate is economical
and thermally efficient. In the Auto IPM, the IGBT
References
and freewheeling diode dies attach directly to the
DBC substrate. This ensures efficient routing of
heat away from the power dies to the edge of the
ON Semiconductor
package, where a heatsink can aid dissipation. www.onsemi.com/PowerSolutions/home.do
How to be smart
when selecting a fan
for forced air cooling
JEF F SMO O T | CU I I NC.
A typical flow vs. pressure performance curve of an axial fan, A typical performance curve of an axial fan with system imped-
this one for the CFM-120 series from CUI. ance plotted overtop. The system operating point is where the
two curves intersect.
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Coilcraft ........................................................................................... IBC
Digi-Key ................................................................................ Cover, IFC
index
Equipto .............................................................................................. 12
Fotofab .............................................................................................. 31
IDT ..................................................................................................... 25
IXYS ................................................................................................... 33
Keystone Electronic Corp. ................................................................... 1
Master Bond ...................................................................................... 18
Marathon Special Products ................................................................ 45
Mean Well ......................................................................................... 13
Memory Protection Devices, Inc. ......................................................... 3
PICO Electronics .................................................................................. 5
Rutronik ............................................................................................... 4
Sager Electronics.................................................................................. 7
Tamura Corporation of America ........................................................ 18
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(actual height)
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Conventional power supply
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systems no longer need complex shunt/multiplexers to make accurate pass/fail readings of the UUT’s
input parameters. These instruments also include I/O ports providing 8 bit TTLs, DC-ON, fault output
signal and remote inhibit as well as an output trigger signal for system timing measurements.