Chapter 2 Basic Physics of Semiconductors (Problems 2.

1, 5, 10, 13, 15, 20)

Prob. 2.1. (a) ni (T 300 K ) 2.5 1013 cm3 ; (b) ni (T 600 K ) 4.15 1016 cm3 .

dn dp
Prob. 22.5. In silicon, Dn 34 cm 2 / s and D p 12 cm 2 / s . I qn ADn (n) I tot Aq Dn Dp ;
dx dx

N Np
I tot Aq Dn e D p 15.5 A .
L L

N AND
Prob. 22.10. Equation 2.69 Vo VT ln N A 2.45 1011 cm 3 .
ni 2

C jo C jo C jo
Prob. 22.13. Equations 2.75 and 2.76. C j 1.3 and 2.2
1 VR / Vo 1 1.5 / Vo 1 0.5 / Vo

After squaring the first and the second equations and divide them,

1 1.5 / Vo 2.2
2
1.5
Vo 0.0365 V . Thus C jo 2.2 1 8.43 fF / m 2 .
1 0.5 / Vo 1.3 Vo

N AND 2
(C jo ) 2 Vo 3.13 1017 cm 3
N A ND si q
However, the problem doesnt have enough information to resolve NA and ND. Say if we assume

NA = 2 x 1018 cm-3, we will end up with N D 3.7 1017 cm 3 .

Prob. 22.15. (a) I tot I D1 I D 2 I s1 (eVB /VT 1) I s 2 (eVB /VT 1) ( I s1 I s 2 )(eVB /VT 1). We end up with a device

with a saturation current of the two combine.

I I I I I
(b) I D I S eVD /VT VD VT ln D and VD1 VD 2 VB ; thus VT ln D1 VT ln D 2 D1 D 2
Is I s1 Is2 I s1 I s 2
I s1 Is2
Moreover, I tot I D1 I D 2 . Solve for the last two equation I D1 I tot and I D 2 I tot .
I s1 I s 2 I s1 I s 2
VD I I
Prob. 22.20. I D I s exp VD VT ln D ; From KVL Vx I x R VD 0 VD VT ln D Vx I x R .
VT Ix Ix
0.2 103 0.5 103
1 0.2 103 R 26 103 ln and 2 0.5 103 R 26 103 ln .
Is Is
0.5
Subtracting the first equation by the second 1 0.3 103 R 0.026 ln R 3.25 k .
0.2

Plugging this number into the first or the second equations I s 2.94 1010 A .