EE311

Introduction to Semiconductor
Devices

L-32: MOSFET-3

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

53
G-Number
B. Mazhari, IITK
 VG VG

VS
SiO2
SiO2
N-type

P-type
P-type

VB VB
What is the condition for strong inversion ?

2 S q N A 2F
VGB VT VFB 2F
Cox
 1.4V

SiO2 SiO2

P-type P-type

-1.4V

2 S q N A 2F
VGB VT VFB 2F VT = 1.4V
1 4V
Cox
 VG 1.4V 1.4V

VS
0V
SiO2 SiO2

N-type

P-type P-type

0V
VB

VT is voltage at which nS N A
 VG 1.4V 1.4V

VS
1V
SiO2 SiO2

N-type

P-type P-type

0V
VB
 VG 0V 0V

VS
0V
SiO2 SiO2

N-type

P-type
P-type
yp

-1.4V -1.4V
VB
 nS N A EFN Ei
n ni exp
kT

SiO2 E EiS
nS ni exp FNS
kT
k

EFNS EFNB EFNB EiB EiB EiS

nS ni exp
P-type kT

E EiB EFNS EFNB EiB EiS

nS ni exp FNB exp exp
kT kT kT
ni2 EiS EiB
SB
NA q
 ni2 EFNS EFNB q SB
nS exp
p exp
p
NA kT kT

ni2 FNS
E E FNB
q th

NA exp exp
SB

SiO2 NA kT kT

kT N A EFNS EFNB
th
SB 2 ln
P-type
P type
q ni q
EFNS EFNB
th
SB 2F
q
EFNS EFNB SB
th
2F at threshold
2 S q N A SB
VGB VFB SB
Cox
 EFNS EFNB
th
SB 2F
EFNsource q
VG

VS
EFNS
SiO2 SiO2
------------- EFNS
N-type

P-type
P-type EFNB

EFNB
VB
EFNS EFNB
EFNSource EFNB
EFNS EFNsource SB
th
h
2F 2F VSB
q
 VG 1.4V 1.4V
0V
VS
SiO2 SiO2

N-type

P-type P-type

VB 0V
SB 2F 0.7V
SB
th
2F VSB 0.7
 1.4V VG 1.4V

VS
1V
SiO2 SiO2

N-type SB 2F 0.7V SB 2F 0.7V

P-type
yp P type
P-type

0V
VB

SB
th
at threshold 2F VSB 1.7
1 7V

2 S q N A SB
VGB VFB SB 3.2V
Cox
 0V
VG 0V

VS
0V SiO2
SiO2

SB 2F 0.7V SB 2F 0.7V
N-type

P-type P-type
P type

VB -1.4V
-1
1.4V
4V

SB
th
at threshold 2F VSB 2.1V
2 S q N A SB
VGB VFB SB 3.85V
Cox

By applying only negative voltage to the body, inversion can never occur !
 0V
VG 0V

VS
-1
1.4V
4V SiO2
SiO2

SB 2F 0.7V SB 2F 0.7V
N-type

P-type P-type
P type

VB -1.4V
-1
1.4V
4V

SB
th
at threshold 2F VSB 0.7
0 7V
 VG

VS
SiO2

N-type

P-type

VB

Threshold is a condition at which surface potential is 2F

SB
th
2F VSB

Threshold is a condition at which surface potential wrt bulk is 2F VSB

Sth - B 2F VS VB Sth -VS 2F

Threshold is a condition at which surface potential wrt source is 2F

 VG
VS
S O2
SiO
SB 2F VSB
N-type

2 S q N A SB Qinv
P-type VGB VFB SB
Cox COX
VB

2 S q N A 2F VSB Qinv
VGB VFB 2F VSB
Cox COX

2 S q N A 2F VSB Qinv
VGS VFB 2F
Cox COX

Qinv 2 S q N A 2F VSB
VGS VT VT VFB 2F
COX Cox
 VG
VS Qinv COX VGS VT
SiO2

N-type
2 S q N A 2F VSB
VT VFB 2F
P-type Cox

VB

2 S q N A 2F 2 S q N A 2F VSB 2 S q N A 2F
VT VFB 2F
Cox Cox Cox

2 S q N A
VT VTO
Cox
2F VSB 2F
body parameter
 VG
VS
SiO2

N-type
N type

P-type

VB

VT VTO 2F VSB 2F

2 S q N A 2F 2 S q N A
VTO VFB 2F
Cox Cox
 VG EFNS EFNB
SB
th
2F
VS VD q
SiO2
+
N
SB 2F VDB
+ th
N

P-type

VB SB
th
2F VSB
What is threshold voltage now?

2 S q N A 2F VSB Qinv
VGB VFB 2F VSB
Cox COX

2 S q N A 2F VSB
Qinv Cox VGS VFB 2F
i
Cox

Qinv COX VGS VT
 VG EFNS EFNB
SB
th
2F
VS VD q
SiO2
+
N
SB 2F VDB
+ th
N

P-type

VB
2 S q N A 2F VDB D
Qinv
VGB VFB 2F VDB
Cox COX

2 S q N A 2F VDB
D
Qinv Cox VGS VDS VFB 2F
Cox

 2 S q N A 2F VDB
D
Qinv Cox VGS VDS VFB 2F
Cox

D
Qinv
COX VGS VT VDS 2F VSB VDS 2F VSB
VG
VS VD
SiO2 y
+
+ N
N x

P-type
P type

VB

QN ( x ) COX VGS VT Vch ( x ) 2F VSB Vch ( x ) 2F VSB
 VG
VS VD
SiO2 y
+
+ N
N x

P-type
yp

VB

QN ( x ) COX VGS VT Vch ( x ) 2F VSB Vch ( x ) 2F VSB
QN ( x ) COX VGS VT Vch ( x )

VT VTO 2F VSB 2F
2 S q N A 2F 2 S q N A
VTO VFB 2F
Cox Cox
MOSFET
Simplified Symbols and structure

D D

G
G B

NMOS S/B
S

Gate
Source D i
Drain Gate
Body Source Drain
Oxide
Oxide
n+ n+
p+ n+ n+

p-type p-type

Body
Simplified Symbols and structure
Gate
Source Drain
D D Oxide

p+
p p+
p
G
G B

PMOS S/B
S n-type
n type

Body

Gate
Source Drain
Body
Oxide

n+ p+
p p+
p

n-type
yp
 G G
S S
B D B
D
Oxide

p+ n+ n+ n+ p+ p+

n-type

p-type

Body potential of NMOS transistors is same and is normally connected to

the most negative voltage in the circuit to ensure that VBS < 0 and thus
body-source PN junction is reverse biased.

Each
E h PMOS can b be ffabricated
bi d iin a separate iindividual
di id l NN-wellll and
d thus
h
each pmos body terminal can have a distinct voltage. Normally body and
source terminals of PMOS are shorted together.
Operation of the MOSFET

2V G
D
S
tOX Oxide
---------------------
n+ n+

VTN 1V
p-type
B
ox
Cox Inversion charge/area : Qinv Cox (VGS VTHN )
tox
 Qinv ( x ) Cox (VGS VTHN V ( x ))
2V

0 5V
0.5V
Oxide
---------------------
n+ n+

p-type
t
B

When a positive drain voltage is applied, current flows from drain to source
and inversion charge density decreases from source to drain end.
 2V

0V
O ide
Oxide

n+ n+

p-type
B

2V

0.5V
Oxide

n+ n+

p type
p-type
B