EE311

Introduction to Semiconductor
Devices

L-30: MOSFET

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

1G-Number
B. Mazhari, IITK
Transistors

Transistor

BipolarJunction FieldEffectTransistor
Transistor(BJT) (FET)

MetalOxidesemiconductor
field effect transistor
fieldeffecttransistor
(MOSFET)
Transistor

IO
+ +

VIN Vo

- -

C
Current
t IO is
i much
h more sensitive
iti tto VIN than
th VO

I O I O

Vin Vo
Field Effect Principle I O I
O
Vin Vo

-2V
5V
- - - - - - - - - -- - - - - - -

+ - + - + - + - + - + - + -
+ -
+ - + - + - + - + - + - + -
N-Type
+ - + - + - + - + - + - + -

Modulation of conductivity using electric field

Transconductance
N-Type
yp

Oxide

N-Type
Depletion-Mode Transistor

1V
-1V Gate
Source Drain
0V 5V
Oxide

n+ N-type n+

p type
p-type
0V
Body

In a depletion-mode
p transistor, a channel exists without any
y gate
g voltage
g being
g
applied and current flows when drain voltage is applied.

Negative gate voltage is applied to deplete the channel of carriers and cause
current to reduce.
Channel exists at zero gate voltage and is depleted by gate voltage

-1V
Gate
Source -3V -2V Drain

Oxide

n+ n+

p-type

Body
Channel is completely pinched off and current ~zero
NMOS Enhancement mode transistor: Inversion Mode
Transistor

S
Metal /Poly
/Poly-Si
Si D

SiO2
Al Al
+ +
N N

P-Silicon

B
 Gate
S
Source Drain
0V 5V
Oxide

n+ n+

p-type

0V
Body

No channel exists when gate voltage is zero and current is

zero as well.
ll
 0.2V
0 2V Gate
Source + + + + + + + + + + + Drain
0V +5V
5V
Oxide
+ + + +
n+ n+
+ + + +
+ + + +

+ + + +
p-type + + + + +
Body
0V
Depletion Region is formed near the Si/SiO2 interface
 0.4V
0 4V Gate
Source + + + + + + + + + + + Drain
0V +5V
5V
Oxide
- -
n+ n+
+ + + +
+ + + +

+ + + +
p-type + + + + +

Depletion width increases 0V

Body
n p n 2
i

But something interesting happens: electron density at the surface also

increases
At a sufficiently large voltage (>VTHN) a strong channel of
electrons forms at the Si/SiO2 interface.

Gate
Source + + + + + + + + + + + + + + Drain

Oxide
-------------------
n+ n+

p-type

Body
Sheet of electrons
Depletion charge (inversion layer)
Conductivity modulation at the surface?
MOS capacitor constitutes the heart of a MOSFET

VG
Gate
Oxide

+ + + + + + +
+ + + + + + +
+ + + + + + +
p-type + + + + + +

3
Body
p N A 10 cm
16

ni2
n 104 cm 3 ns ps n 10 cm
2 20 3
NA 1
 3
Field Effect ns ps n 10 cm
1
2 20

0V VT
VG

16 15 10 8 4
Ps: 10 10 10 10 10
4 5 10 12 16 17
ns: 10 10 10 10 10 10
Strong .
Inverted Inversion
Surface P-Type
Surface
Intrinsic N-Type
Surface carrier density can be changed from P-type to N-type
Surface Carrier Density

ps ns

NA
ps

ni

ns

VGB VT
Flat band condition VG VFB

VG
Gate
Oxide

+ + + + + + +
+ + + + + + +
+ + + + + + +
p-type + + + + + +
Body

VG = VFB ; Flat-band
Flat band condition meaning no NET voltage across the capacitor
capacitor.
Uniform hole density everywhere
MOS Capacitor: Energy band diagram

16 -3
Metal SiO2 10 cm

P-type

16 -3
SiO2 10 cm

P-type
yp

18
G-Number
B. Mazhari, IITK
 16 -3
SiO2 10 cm

P-type
yp

EO
1
4.05
4.3

0.18
5.17
10
19
G-Number
B. Mazhari, IITK
 EO
1
4 05
4.05
4.3
5

10 5.17

EC
EO

EF
EV

MS s m 0.7
0 7V s m ms
q VFB =- 0.7V
q q
20
G-Number
B. Mazhari, IITK
 EC

Ei
Metal SiO2 P-type
EF

EV

Ei
const. Ei ( x ) Eib S B 0
q
( x)
q

E Ei E EF
n ni exp F p ni exp i
kT kT

ni2 q q
n exp p N A exp
NA kT kT
Metal SiO2 P-type qF

Eib EF kT NA
p N A ni exp F ln
q i
n
kT

ni2 q S q S
nS exp pS N A exp
S F kT
NA kT
ni ni
Depletion
VG VFB but VG VTHN

Gate
Oxide

+ + + + + + + Depletion region
+ + + + + + +
p-type + + + + + +
Body

Holes are depleted from the surface pS pB

Although n S nB electron density is also very small

Example

Draw the energy band diagram when : nS pB N A

Metal SiO2 P-type

ni2 q
nS exp
p S NA
NA kT
k

kT NA
F ln
q i
n

S 2F
Strong Inversion
VG VTHN

Gate
Oxide
-------------------------

Depletion region
+ + + + + + +
p-type + + + + + +
Body

Electrons are accumulated at the surface nS N A

Accumulation
VG VFB

Gate
Oxide
+
++ + ++ + + + + ++ + +
+ + + + + + + extra holes

+ + + + + + +
p-type + + + + + +
Body

Holes are accumulated at the surface pS pB

 Metal SiO2 P-type

Flatband EC

Ei
EF

EV

MS
VGS VFB
q
 Metal SiO2 P-type

Depletion

VGS VFB VOX S

VOX EOX tOX ox EOX QS