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SEMICONDUCTOR TECHNICAL DATA by BC237/D

 

 

NPN Silicon

 



COLLECTOR
1

2
BASE

3
EMITTER
1
MAXIMUM RATINGS 2
3
BC BC BC
Rating Symbol 237 238 239 Unit CASE 2904, STYLE 17
Collector Emitter Voltage VCEO 45 25 25 Vdc TO92 (TO226AA)

Collector Emitter Voltage VCES 50 30 30 Vdc

Emitter Base Voltage VEBO 6.0 5.0 5.0 Vdc
Collector Current Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25C PD 350 mW
Derate above 25C 2.8 mW/C
Total Device Dissipation @ TC = 25C PD 1.0 Watts
Derate above 25C 8.0 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 357 C/W
Thermal Resistance, Junction to Case RqJC 125 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage BC237 V(BR)CEO 45 V
(IC = 2.0 mA, IB = 0) BC238 25
BC239 25
Emitter Base Breakdown Voltage BC237 V(BR)EBO 6.0 V
(IE = 100 mA, IC = 0) BC238 5.0
BC239 5.0
Collector Cutoff Current ICES
(VCE = 30 V, VBE = 0) BC238 0.2 15 nA
BC239 0.2 15

(VCE = 50 V, VBE = 0) BC237 0.2 15

(VCE = 30 V, VBE = 0) TA = 125C BC238 0.2 4.0 A

BC239 0.2 4.0

(VCE = 50 V, VBE = 0) TA = 125C BC237 0.2 4.0

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996

 

 



ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE
(IC = 10 A, VCE = 5.0 V) BC237A 90
BC237B/238B 150
BC237C/238C/239C 270

(IC = 2.0 mA, VCE = 5.0 V) BC237 120 800

BC239 120 800
BC237A 120 170 220
BC237B/238B 200 290 460
BC237C/238C/239C 380 500 800

(IC = 100 mA, VCE = 5.0 V) BC237A 120

BC237B/238B 180
BC237C/238C/239C 300
Collector Emitter On Voltage VCE(sat) V
(IC = 10 mA, IB = 0.5 mA) BC237/BC238/BC239 0.07 0.2
(IC = 100 mA, IB = 5.0 mA) BC237/BC239 0.2 0.6
BC238 0.8
Base Emitter Saturation Voltage VBE(sat) V
(IC = 10 mA, IB = 0.5 mA) 0.6 0.83
(IC = 100 mA, IB = 5.0 mA) 1.05
BaseEmitter On Voltage VBE(on) V
(IC = 100 A, VCE = 5.0 V) 0.5
(IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7
(IC = 100 mA, VCE = 5.0 V) 0.83
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product fT MHz
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) BC237 100
BC238 120
BC239 140

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC237 150 200

BC238 150 240
BC239 150 280
CollectorBase Capacitance Cobo 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
EmitterBase Capacitance Cibo 8.0 pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz) BC239
2.0 4.0
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz, f = 200 Hz) BC237 2.0 10
BC238 2.0 10
BC239 2.0 4.0

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data


 

 



2.0 1.0
VCE = 10 V TA = 25C
hFE, NORMALIZED DC CURRENT GAIN 1.5 0.9
TA = 25C
0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. Saturation and On Voltages

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

400 10
300
7.0
200 TA = 25C

C, CAPACITANCE (pF)
5.0 Cib

100 VCE = 10 V
80 TA = 25C 3.0
Cob
60
2.0
40
30

20 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. CurrentGain Bandwidth Product Figure 4. Capacitances

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25C

130

120
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 5. Base Spreading Resistance

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3