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SEMICONDUCTOR TECHNICAL DATA by BC556/D

 
PNP Silicon  
 
COLLECTOR  
1

2
BASE

3
EMITTER

MAXIMUM RATINGS
1
BC BC BC 2
3
Rating Symbol 556 557 558 Unit
Collector – Emitter Voltage VCEO –65 –45 –30 Vdc CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector – Base Voltage VCBO –80 –50 –30 Vdc
Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO V
(IC = –2.0 mAdc, IB = 0) BC556 –65 — —
BC557 –45 — —
BC558 –30 — —
Collector – Base Breakdown Voltage V(BR)CBO V
(IC = –100 µAdc) BC556 –80 — —
BC557 –50 — —
BC558 –30 — —
Emitter – Base Breakdown Voltage V(BR)EBO V
(IE = –100 mAdc, IC = 0) BC556 –5.0 — —
BC557 –5.0 — —
BC558 –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –40 V) BC556 — –2.0 –100 nA
(VCES = –20 V) BC557 — –2.0 –100
BC558 — –2.0 –100
(VCES = –20 V, TA = 125°C) BC556 — — –4.0 µA
BC557 — — –4.0
BC558 — — –4.0

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
     

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = –10 µAdc, VCE = –5.0 V) BC557A — 90 —
BC556B/557B/558B — 150 —
BC557C — 270 —
(IC = –2.0 mAdc, VCE = –5.0 V) BC556 120 — 500
BC557 120 — 800
BC558 120 — 800
BC557A 120 170 220
BC556B/557B/558B 180 290 460
BC557C 420 500 800
(IC = –100 mAdc, VCE = –5.0 V) BC557A — 120 —
BC556B/557B/558B — 180 —
BC557C — 300 —
Collector – Emitter Saturation Voltage VCE(sat) V
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.075 –0.3
(IC = –10 mAdc, IB = see Note 1) — –0.3 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc) — –0.25 –0.65
Base – Emitter Saturation Voltage VBE(sat) V
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.7 —
(IC = –100 mAdc, IB = –5.0 mAdc) — –1.0 —
Base–Emitter On Voltage VBE(on) V
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.55 –0.62 –0.7
(IC = –10 mAdc, VCE = –5.0 Vdc) — –0.7 –0.82

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product fT MHz
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556 — 280 —
BC557 — 320 —
BC558 — 360 —
Output Capacitance Cob — 3.0 6.0 pF
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 V, BC556 — 2.0 10
RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) BC557 — 2.0 10
BC558 — 2.0 10
Small–Signal Current Gain hfe —
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC556 125 — 500
BC557/558 125 — 900
BC557A 125 220 260
BC556B/557B/558B 240 330 500
BC557C 450 600 900

Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

      

BC557/BC558

2.0 –1.0
TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN

1.5 VCE = –10 V –0.9

TA = 25°C –0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 –0.7
–0.6 VBE(on) @ VCE = –10 V
0.7
–0.5
0.5 –0.4
–0.3

0.3 –0.2
–0.1 VCE(sat) @ IC/IB = 10

0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

–2.0 1.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)

θVB , TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C –55°C to +125°C
1.2
–1.6

1.6
–1.2
2.0
IC = IC = –50 mA IC = –200 mA
–0.8
–10 mA
2.4
IC = –100 mA
IC = –20 mA
–0.4
2.8

0
–0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)

5.0 150 VCE = –10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30

1.0 20
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

     

BC556

–1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TJ = 25°C
VCE = –5.0 V
TA = 25°C –0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
–0.6
VBE @ VCE = –5.0 V
1.0
–0.4
0.5

–0.2
0.2 VCE(sat) @ IC/IB = 10

0
–0.1 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2.0 –1.0

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.6 –1.4
IC = –20 mA –50 mA –100 mA –200 mA
–1.2 –10 mA –1.8
θVB for VBE
–55°C to 125°C
–0.8 –2.2

–0.4 –2.6

TJ = 25°C
0 –3.0
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

40
f T, CURRENT–GAIN – BANDWIDTH PRODUCT

VCE = –5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)

200

10 100
8.0
6.0 50
Cob
4.0
20

2.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

      

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1 ZθJC(t) = (t) RθJC
0.1 P(pk) RθJC = 83.3°C/W MAX
0.07 SINGLE PULSE ZθJA(t) = r(t) RθJA
0.05 t1 RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
0.03 t2 PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 13. Thermal Response

–200
1s 3 ms
IC, COLLECTOR CURRENT (mA)

–100
The safe operating area curves indicate IC–VCE limits of the
TA = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector load
–50
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; TC or TA is
BC558 variable depending upon conditions. Pulse curves are valid for duty
–10
BC557 cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
BC556 the data in Figure 13. At high case or ambient temperatures, thermal
–5.0 limitations will reduce the power than can be handled to values less
BONDING WIRE LIMIT
than the limitations imposed by second breakdown.
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0 –5.0 –10 –30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

     

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data


◊ BC556/D