DPG30I300PA

HiPerFRED VRRM = 300 V

I FAV = 30 A
t rr = 35 ns

High Performance Fast Recovery Diode

Low Loss and Soft Recovery
Single Diode
Part number

DPG30I300PA

Backside: cathode

3 1

Features / Advantages: Applications: Package: TO-220

Planar passivated chips Antiparallel diode for high frequency Industry standard outline
Very low leakage current switching devices RoHS compliant
Very short recovery time Antisaturation diode Epoxy meets UL 94V-0
Improved thermal behaviour Snubber diode
Very low Irm-values Free wheeling diode
Very soft recovery behaviour Rectifiers in switch mode power
Avalanche voltage rated for reliable operation supplies (SMPS)
Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS)
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b

2013 IXYS all rights reserved

 DPG30I300PA

Fast Diode Ratings

Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C 300 V
VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V
IR reverse current, drain current VR = 300 V TVJ = 25C 1 A
VR = 300 V TVJ = 150C 0.1 mA
VF forward voltage drop IF = 30 A TVJ = 25C 1.35 V
IF = 60 A 1.66 V
IF = 30 A TVJ = 150 C 1.08 V
IF = 60 A 1.43 V
I FAV average forward current TC = 140C T VJ = 175 C 30 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 175 C 0.70 V
for power loss calculation only
rF slope resistance 11.1 m
R thJC thermal resistance junction to case 0.85 K/W
R thCH thermal resistance case to heatsink 0.50 K/W
Ptot total power dissipation TC = 25C 175 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C 360 A
CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 42 pF
I RM max. reverse recovery current TVJ = 25 C 3 A
IF = 30 A; VR = 200 V TVJ = 125C 7 A
t rr reverse recovery time -di F /dt = 200 A/s TVJ = 25 C 35 ns
TVJ = 125C 55 ns

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b

2013 IXYS all rights reserved

 DPG30I300PA

Package TO-220 Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 35 A
TVJ virtual junction temperature -55 175 C
T op operation temperature -55 150 C
Tstg storage temperature -55 150 C
Weight 2 g
MD mounting torque 0.4 0.6 Nm
FC mounting force with clip 20 60 N

Product Marking Part number

D = Diode
P = HiPerFRED
G = extreme fast
30 = Current Rating [A]
I = Single Diode
300 = Reverse Voltage [V]
Part Number XXXXXX PA = TO-220AC (2)

Logo Zyyww
Assembly Line
Lot # abcdef
Date Code

Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard DPG30I300PA DPG30I300PA Tube 50 505675

Similar Part Package Voltage class

DPG30I300HA TO-247AD (2) 300
DPF30I300PA TO-220AC (2) 300

Equivalent Circuits for Simulation * on die level T VJ = 175 C

V0 Fast
I R0
Diode
V 0 max threshold voltage 0.7 V
R 0 max slope resistance * 7.9 m

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b

2013 IXYS all rights reserved

 DPG30I300PA

Outlines TO-220

E A1

Q
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190

H1
P 4 A1 1.14 1.39 0.045 0.055
D A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
1 3 D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
L1

2x b2
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L

L 12.70 13.97 0.500 0.550

L1 2.79 5.84 0.110 0.230
2x b C
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
e
A2

3 1

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b

2013 IXYS all rights reserved

 DPG30I300PA

Fast Diode
80 16

0.4 IF = 60 A 14 IF = 60 A
70
30 A
30 A
15 A 12
60 15 A
0.3
50 10
IF TVJ = 150C IRM
Qrr
40 8
0.2
[A] 30 [A] 6
[C]

20 4
0.1
25C TVJ = 125C TVJ = 125C
10 2
VR = 200 V VR = 200 V

0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600
VF [V] -diF /dt [A/s] -diF /dt [A/s]
Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current
IF versus VF Qrr versus -diF /dt IRM versus -diF /dt

1.4 70 600 12
TVJ = 125C VFR
tfr
VR = 200 V
1.2 500 10
60

1.0 400 8
trr 50 tfr VFR
Kf 0.8 300 6
IF = 60 A
[ns] 40 30 A [ns] [V]
0.6 15 A 200 4
IRM
30 TVJ = 125C
0.4 100 VR = 200 V 2
IF = 30 A
Qrr
0.2 20 0 0
0 40 80 120 160 0 200 400 600 0 200 400 600
TVJ [C] -diF /dt [A/s] -diF /dt [A/s]
Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage
Qrr, IRM versus TVJ trr versus -diF /dt VFR & tfr versus diF /dt

16 1
TVJ = 125C
14
VR = 200 V
12
IF = 15 A
10 ZthJC
Erec 30 A
8 60 A
[J] 6 [K/W]
Rthi [K/W] ti [s]
4
0.139 0.00028
0.176 0.0033
2 0.305 0.028
0.23 0.17
0.1
0 200 400 600 0.001 0.01 0.1 1 10
-diF /dt [A/s] t [s]
Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case
Erec versus -diF /dt

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b

2013 IXYS all rights reserved