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4n35 PDF
4n35 PDF
Vishay Semiconductors
Features
Isolation Test Voltage 5300 VRMS
Interfaces with common logic families A 1 6 B
Input-output coupling capacitance < 0.5 pF
C 2 5 C
Industry Standard Dual-in line 6-pin package
Lead-free component NC 3 4 E
Agency Approvals
i179004
e3 Pb
Pb-free
Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current 10 s IFSM 2.5 A
Power dissipation Pdiss 100 mW
Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
voltage
Emitter-base breakdown VEBO 7.0 V
voltage
Collector current IC 50 mA
(t 1.0 ms) IC 100 mA
Power dissipation Pdiss 150 mW
Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage 7.0 mm
Clearance 7.0 mm
Isolation thickness between 0.4 mm
emitter and detector
Comparative tracking index per 175
DIN IEC 112/VDE0303,part 1
Isolation resistance VIO = 500 V, Tamb = 25 C RIO 1012
VIO = 500 V, Tamb = 100 C RIO 1011
Storage temperature Tstg - 55 to + 150 C
Operating temperature Tamb - 55 to + 100 C
Junction temperature Tj 100 C
Soldering temperature max. 10 s dip soldering: Tsld 260 C
distance to seating plane
1.5 mm
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage1) IF = 10 mA VF 1.3 1.5 V
IF = 10 mA, Tamb = - 55 C VF 0.9 1.3 1.7 V
Reverse current1) VR = 6.0 V IR 0.1 10 A
Capacitance VR = 0, f = 1.0 MHz CO 25 pF
1) Indicates JEDEC registered value
Output
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA 4N35 BVCEO 30 V
voltage1)
4N36 BVCEO 30 V
4N37 BVCEO 30 V
4N38 BVCEO 80 V
Emitter-collector breakdown IE = 100 A BVECO 7.0 V
voltage1)
Collector-base breakdown IC = 100 A, IB = 1.0 A 4N35 BVCBO 70 V
voltage1)
4N36 BVCBO 70 V
4N37 BVCBO 70 V
4N38 BVCBO 80 V
Collector-emitter leakage VCE = 10 V, IF = 0 4N35 ICEO 5.0 50 nA
current1)
4N36 ICEO 5.0 50 nA
VCE = 10 V, IF=0 4N37 ICEO 5.0 50 nA
VCE = 60 V, IF = 0 4N38 ICEO 50 nA
VCE = 30 V, IF = 0, Tamb = 4N35 ICEO 500 A
100 C
4N36 ICEO 500 A
4N37 ICEO 500 A
VCE = 60 V, IF = 0, Tamb = 4N38 ICEO 6.0 A
100 C
Collector-emitter capacitance VCE = 0 CCE 6.0 pF
1)
Indicates JEDEC registered value
Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Resistance, input to output1) VIO = 500 V RIO 1011
Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF
1)
Indicates JEDEC registered value
Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching time1) IC = 2 mA, RL = 100 , VCC = 10 V ton, toff 10 s
1) Indicates JEDEC registered value
1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25C
TA = 55C CTRce(sat) Vce=0.4 V
NCTR - Normlized CTR
VF - Forward Voltage - V
1.2
1.0
TA = 25C
1.1 TA=25C
1.0
0.9 0.5
TA = 85C
0.8 NCTR(SAT)
NCTR
0.7
0.0
.1 1 10 100 0 1 10 100
IF - Forward Current - mA IF - LED Current - mA
i4n25_01 i4n25_02
Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
1.5 35
Normalized to:
Vce=10 V, IF=10 mA, TA=25C 30
CTRce(sat) Vce=0.4 V
25
1.0 50C
TA=50C 20
70C
15
25C 85C
0.5
10
NCTR(SAT)
5
NCTR
0.0 0
.1 1 10 100 0 10 20 30 40 50 60
IF- LED Current - mA IF - LED Current - mA
i4n25_03 i4n25_06
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Figure 6. Collector-Emitter Current vs. Temperature and LED
Current Current
1.5 5
Normalized to: 10
Vce=10 V, IF=10 mA, TA=25C 4
NCTR - Normalized CTR
Iceo - Collector-Emitter - nA
10
CTRce(sat) Vce=0.4 V
3
1.0 10
TA=70C
10 2
1 Vce = 10 V
10
0.5 Typical
0
NCTR(SAT) 10
NCTR 10 1
0.0
.1 1 10 100 10 2
20 0 20 40 60 80 100
IF - LED Current - mA
TA - Ambient Temperature - C
i4n25_04 i4n25_07
Figure 4. Normalized Non-saturated and saturated CTR vs. LED Figure 7. Collector-Emitter Leakage Current vs.Temp.
Current
1.5 1.5
Normalized to: Normalized to:
NCTRcb - Normalized CTRcb
1.0 1.0
TA=85C
0.5 0.5
25C
NCTR(SAT) 50C
NCTR 70C
0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08
Figure 5. Normalized Non-saturated and saturated CTR vs. LED Figure 8. Normalized CTRcb vs. LED Current and Temp.
Current
10 1000 2.5
Normalized to: IF =10 mA,TA=25C
tPHL
100 2.0
1
10 1.5
0.1
Nib, TA=20C tPLH
Nib, TA= 25C
Nib, TA= 50C
Nib, TA= 70C 1 1.0
0.01 .1 1 10 100
.1 1 10 100
RL - Collector Load Resistor - k
i4n25_09 IF - LED Current - mA i4n25_12
Figure 9. Normalized Photocurrent vs. IF and Temp. Figure 12. Propagation Delay vs. Collector Load Resistor
1.2
70C
IF
NHFE - Normalized HFE
1.0
25C
20C
0.8 tD
VO tR
Normalized to: tPLH
Ib=20 A, Vce=10 V, TA=25C
0.6 VTH=1.5 V
tPHL tS tF
0.4
1 10 100 1000
Ib - Base Current - A
i4n25_10 i4n25_13
Figure 10. Normalized Non-saturated HFE vs. Base Current and Figure 13. Switching Timing
Temperature
NHFE(sat) - Normalized Saturated HFE
1.5
Normalized to:
Vce=10 V, Ib=20 A VCC = 5.0 V
70C 50C T A =25C
1.0
F=10 KHz, RL
25C DF=50%
20C VO
0.5
IF=1 0 mA
Vce=0.4 V
0.0
1 10 100 1000
i4n25_11 Ib - Base Current - A i4n25_14
Figure 11. Normalized HFE vs. Base Current and Temp. Figure 14. Switching Schematic
14770
pin one ID
3 2 1
.248 (6.30)
.256 (6.50)
4 5 6 ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4 18
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
39 .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300.347
.100 (2.54) typ. (7.628.81)
i178004