4thINTERNATIONAL CONFERENCE ON COMPUTATIONAL

AND EXPERIMENTAL SCIENCE AND ENGINEERING

(ICCESEN-2017)
4-8October 2017, ANTALYA-TURKEY

Behavioural IGBT models review

Yassine HADINI1, Abdelghafour GALADI2, Adil ECHCHELH1

1Laboratoryof Electrical Engineering and Energy System, Faculty of Sciences, IbnTofail University, Kenitra
Morocco
2Team: Electronic, Electrical engineering, Instrumentation and Imaging, National School of Applied Sciences,

CadiAyyad University, Safi, Morocco

Abstract

The Insulated Gate Bipolar Transistor (IGBT) is at present one of the most widely used
power semiconductor devices, synergizing a high-input impedance MOS-gate control with
low forward voltage drop bipolar current conduction. Since its introduction in 1983 several
papers have been published on IGBT models. In this paper, three IGBT behavioural models
are reviewed, analysed and compared corresponding to their accuracy and speed. The
studying approach consists to extract the models parameters from the datasheet information
given by the manufacturers, to apply them in each considered model, to simulate it, and to
compare the simulation results to datasheet curves.

Keywords: IGBT, Models, Review.


Corresponding Author Email : Yassine.hadini@gmail.com

http://2017.iccesen.org/