DIODE SPECIFICATION SHEETS
1.The forward voltage VF (at a specified current and temp.)
• The max forward current IF(at a specified temp.)
temp )
• The reverse saturation current IR (at a specified voltage and current)
• The reverse-voltage rating [PIV or PRV or V(BR), where BR comes
from the term “breakdown” (at a specified temp)]
• The max power dissipation level at a particular temp
p
• Capacitance levels
• Recovery time trr
• Operating temp range
Additional data may related to
Frequency range, noise level, switching time, thermal resistance level,
peak repetitive values.
5
8
5
9
C D
6
0
E
6
1
F
6
Terminal characteristics of a high-voltage diode. (Continued) 2
G H
6
Terminal characteristics of a high-voltage diode. 3
SEMICONDUCTOR DIODE NOTATION
64
Various types of junction diodes. [(a) Courtesy of Motorola Inc.; and (b) and (c) Courtesy International Rectifier
Corporation.]
65
DIODE TESTING
http://www.inotek.com/Catalog/flu
ke1et.html
6
Digital display meter with diode checking capability. 6
DIODE TESTING Diode Checking Function 67
Checking a diode in the forward-bias state.
DIODE TESTING Ohmmeter Testing 68
Checking a diode with an ohmmeter.
DIODE TESTING Curve Tracer 69
Curve tracer. (Courtesy of Tektronix, Inc.)
DIODE TESTING (Curve Tracer) 70
Curve tracer response to IN4007 silicon diode.
ZENER DIODES 71
Conduction direction: (a) Zener diode; (b) semiconductor diode.
ZENER DIODES
• Location of Zener Region can be controlled by varying the
doping level.
• Z
Zener diodes
di d are available
il bl with
i h zener potentials
i l 1.8V
1 8V to 200V
with power rating from 1/4W to 50W.
• Zener diode is ideal with straight vertical line at zener potential.
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2
ZENER DIODES 73
Electrical characteristics for a 10-V, 500-mW 74
Zener diode
IZT = Current
C ddefined b 1/4th power level.
fi d by l l
The Zener potential of a Zener diode is very sensitive to the temp of operation.
The temp coefficient can be used to find the change in Zener potential due to a
change in temp V / V
TC Z Z
100 % / C
T1 T0
Where TT1 is the new temp level T
Where is the new temp level is room temp in an enclosed cabinet (250C)
T0 is room temp in an enclosed cabinet (25
Tc is the temp coefficient
VZ is the nominal Zener potential at 25 0C
Electrical characteristics for a 10-V, 75
500-mW
500 mW Zener diode
Example 1.4
76
Analyze the 10 V diode, if the temp is increased to 1000C.
ZENER DIODES 77
Zener terminal identification and symbols.
Home work
P-48 to 53
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LIGHT-EMITTING DIODES
79
In Si and Ge diode the greater percentage of the energy
converted during recombination at the junction is dissipated in
the form of heat within the structure, and the emitted light is
insignificant.
Diode constructed of GaAs emit light in the infrared (invisible)
zone during the recombination process at the p-n junction.
LIGHT-EMITTING DIODES
80
The frequency
Th f spectrum
t f infrared
for i f d light
li ht extends
t d from
f about
b t 100
THz(T=1012) to 400 THz, with the visible light spectrum extending
from about 400 to 750 THz.
c = 3*108 m/s (the speed of light in a vacuum)
c
f = Frequency in hertz
f λ = Wavelength in meters
LIGHT-EMITTING DIODES 81
(a) Process of electroluminescence in the LED; (b) graphic symbol.
LIGHT-EMITTING DIODES
82
Eg , λ and f
Standard response curve of the human eye, showing the eye’s response to
light energy peaks at green and falls off for blue and red
FIGURE 1-60a-c Hewlett-Packard subminiature high-efficiency red solid-state lamp: (a) appearance; (b) absolute
maximum ratings; (c) electrical/optical characteristics. (Courtesy Hewlett-Packard Corporation.)
8
3
Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative intensity
versus wavelength (Courtesy Hewlett-Packard Corporation.)
8
4
Hewlett-Packard subminiature high-efficiency red solid-state lamp: forward current
versus forward voltage (Courtesy Hewlett-Packard Corporation.)
8
5
Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative luminous intensity
versus forward current (Courtesy Hewlett-Packard Corporation.)
8
6
Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative efficiency versus peak
current (Courtesy Hewlett-Packard Corporation.)
8
7
Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative luminous intensity
versus angular displacement (Courtesy Hewlett-Packard Corporation.)
(h)
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LIGHT-EMITTING DIODES
89
• Reverse Breakdown Voltage: 3V to 10V
– Protective approach required
• For many years the available colors were green, yellow,
orange and red permitting the use of average values of
VF=2V andd IF=20mA for f obtaining
b i i the
h approximate
i
operating level.
• Introduction
I t d ti off bluebl in
i early
l 90s
90 andd White
Whit ini late
l t 90s
90
– White: VF=4V and IF=20mA
– Blue : VF=5V and IF=20mA
• Today most white LEDs are constructed by a blue GaN
LED below a film of Yettrium Aluminium Garnet
phosphor (Yellow)
White LED
90
Applications
Challenges
Future
LED spotlight using 38 individual diodes for mains
voltage power
Seven Segment Display. 91
Home work
P-54 to 58
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