Nanostructured VO2-Porous silicon hybrid:

Structural, thermochromic and optical properties

E.E. 1
Antúnez , U. 1
Salazar-Kuri , J.O. J. M.A. 1
Estévez , 2
Campos , 1
Basurto , S. Jiménez-
Sandoval3, V. Agarwal1
1CIICAp-UAEM, 2IER-UNAM, 3CINVESTAV-IPN

Abstract Introduction Methods and Materials

VO2-porous silicon hybrids display the growth of VO2 undergoes a temperature-induced, reversible VO2 precursor
nanometer-scale crystals of VO2 as compared with first-order SMT at a Tc ≈ 68°C1, 2 accompanied by a V2O5 + H2C2O4∙2H2O + Ethanol refluxed at 120°C, 10 h
flat substrates. Temperature-controlled X-ray crystallographic transformation from monoclinic
diffraction and micro-Raman demonstrate reversible VO2(M) crystal structure (low temperature) to rutile PSi single layer
semiconductor-metal transition (SMT) coupled with a VO2(R) phase (high temperature)3, 4. The SMT causes Anodic etching of p-type Si (1-5 mΩ-cm) in 3:7:1
decreased phase transition temperature (Tc ≈ 48°C). distinct features such as changes in the electrical electrolyte (HF/ethanol/glycerol), J = 30 mA/cm2 for 60 s
Effective optical response studied in terms of resistivity5 and selective IR optical switching6. At T<Tc
red/blue shift of the hybrid’s reflectance spectra VO2 is in the semiconductor-state permitting IR
results in a wavelength-dependent optical switching transmission, while at T>Tc is in the metallic-state
with temperature. A reference sample was prepared displaying IR-blocking property. On the other hand,
over a crystalline silicon (cSi) substrate for porous silicon (PSi) is an attractive candidate for its
morphological and structural characterization of VO2. use as nanoscale template for emerging hybrid
materials regarding new sensing platforms7, 8. In this
work, effective optical response of VO2 incorporated
into a PSi matrix has been shown to demonstrate a
Results wavelength-dependent optical switching for its
potential application as optical temperature sensor.
40 14
VO2/cSi (a) VO2/cSi
13
20 %R2500 = 9.06
Semiconductor

Reflectance (%)
1.4 Theat = 50.7°C

Metal (a) 12 1.2

1.0 Tcool = 45°C

dRef/dTemp
0.8
0 0.6

11 0.4
1253 nm
30 PSi 0.2
Reflectance (%)

0.0

20 40 60 80

10 Temperature (oC)

15 Heating
(b) 9
Cooling 1700 nm

0 20 40 60 80 100

1559 nm Temperature (oC)

30 VO2(M)/PSi 23 °C
8 (b) VO2/PSi 0.0

15 7
(c)

dRef/dTemp
-0.2

-0.4

Reflectance (%)
0 -0.6
Tcool = 44°C Theat = 55°C

5
30 VO2(R)/PSi 90 °C 20 40

Temperature (oC)
60 80

15 1458 nm 3
(d) 2 Heating
0 Cooling 1700 nm
400 800 1200 1600 2000 2400 1
20 40 60 80 100

Wavelength (nm) Temperature (oC)

Figure 3. Temperature-dependent reflectance spectra of (a) Figure 4. Optical switching of the

VO2/cSi in the semiconductor and metallic state, (b) bare PSi reflectance hysteresis loops at
Figure 1. Top and cross-sectional HRSEM micrographs of (a, b) layer, (c) VO2/PSi hybrid in the semiconductor-state and (d) 1700 nm corresponding to (a)
VO2/cSi, (c, d) single PSi layer and (e, f) VO2/PSi hybrid. VO2/PSi hybrid in the metallic-state. VO2/cSi sample and (b) VO2/PSi
hybrid.
(110) - VO2(R)

Conclusions
(a) (c ) VO2/cSi o
(d) VO2/PSi o
23 C
23 C
(211)

o o
(220)

190 C 40 C
o
40 C
Intensity (a.u.)

o
50 C
o
50 C  Well-grew features of VO2 displaying an enhanced crystalline habit,
o
80 C
o
60 C
o
60 C were obtained using PSi template as compared with the compact
Intensity (a.u.)
Intensity (a.u.)

granular microstructure formed on cSi.

o
70 C o
70 C
o
(011) - VO2(M) 80 C
 A lowered Tc was obtained without doping VO2 compound.
o
80 C
R.T. o
(220)

70 C o
70 C
(022)

o
60 C
o
60 C
 Effective optical response of the hybrid enables direct, real-time
20 30 40 50 60 70
o
50 C
o
50 C observation of thermochromic changes in VO2 during SMT.
2 Theta (Deg)
o
o
40 C
 Tunable thermo-responsiveness of hybrid structure has been
40 C
(b) VO2(R) - (110) (011) - VO2(M)
o demonstrated in terms of wavelength-dependent optical switching.
23 C
FWHM:
 An enlarged hysteresis loop was obtained suggesting the appearance of
o
23 C
0.570(3) R.T.
521

612
193
221

392
308
612
221

308
142

521
193

392

broader operational window for possible optical temperature sensing.

Intensity (a.u.)

100 200 300 400 500 600 700 100 200 300 400 500 600 700
0.474(2)
Raman shift (cm-1)
190 °C
Raman shift (cm-1)
0.659(3) 80 °C Figure 2. GIXRD patterns at different temperatures of (a) Acknowledgments
VO2/cSi and (b) VO2/PSi hybrid (characteristic (011)/(110)
0.616(4) R.T. The author acknowledge M.A. Hernández-Landaverde for the technical support in XRD. E.E. Antúnez
peak shift). Temperature-controlled micro-Raman of (c) thanks for the doctoral fellowship No. 329955 granted by CONACyT. The work was financially
30 31 32 33 34 35
VO2/cSi and (d) VO2/PSi displaying reversible SMT. supported by CIAM project No. 188657.
2 Theta (Deg)

Contact References
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