EE 5341 MOS Device Modeling

Assignment 1: MOS Capacitor / Junction

1) An ideal MOS junction / capacitor has Na = 6 x 1015 cm-3 and tox = 0.1 m. It is biased with a gate
to bulk voltage of 5 V. Estimate:
a) potential drops across oxide and silicon.
b) inversion and depletion charges.
c) oxide and surface fields.

2) An Aluminum gate MOS junction / capacitor has Qf/q = 1 x 1010 cm-2. Its other parameters are Na
= 6 x 1015 cm-3 and tox = 0.1 m, which are same as in problem 1). Estimate the following:
a) flat-band and threshold voltages.
b) minimum capacitance of the high frequency C-V curve.
c) repeat (a), if the substrate is changed from p-type to n-type, with the same doping.

3) An Aluminum gate MOS capacitor is fabricated on an n-silicon substrate with Nd = 1015 cm-3, tox =
0.12 m and Qf /q = 3 x 1011 cm-2. Sketch the energy band diagram from gate to substrate at the
onset of inversion to scale, showing the critical values on the diagram.

4) A 0.5 m thick gate oxide is grown on a uniformly doped n-silicon sample with Nd = 1.5 x 1015
cm-3. Assuming the oxide to be charge free, calculate the surface potential and the gate voltage for
making the surface intrinsic.

5) A MOS junction / capacitor has a p-type substrate, a positive fixed charge, ms = 0 and VT < 0.
Sketch the following from gate to substrate, under zero gate to bulk bias.
a) space-charge distribution
b) electric field distribution
c) potential distribution
d) band diagram