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ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 3
RC RC RC RC
+ +
vOD vOD
- VOS -
Q1 Q2 Q1 Q2
+ + + +
vin IOS vBE1 vBE2
vin - -
- 2
-
Circuit
IEE IEE
with no
VEE mismatches VEE DM01
where
IC1 IC2 IC1 I s2
V OS = V BE1-V BE2 = V tln - V tln = V tln
I
s1 I
s2 IC2 Is1
How does Is depend upon the semiconductor parameters?
n
qni2 D n
qni2 D n
qni2 D n
qni2 D
Is1 = A1 = A and Is2 = A2 = A
N A W B1 (V CB ) Q B1(V CB ) 1 N A W B2 (V CB ) Q B2(V CB ) 2
where WB(VCB) is the base width as a function of VCB, NA is the acceptor density in the base and A is the
emitter area.
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 5
∆RC 2 ∆ Is 2
V OS = V t + = 0.026 (0.01)2+(0.05)2 = (0.026)0.051 ≈ 1.3mV
RC Is
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 7
RC RC
iC1 iC2 +
vOD
-
iB iB1
Q1 Q2
+ +
IOS vBE1 vBE2
-
iB 2 iB2-
IEE
VEE DM02
The input offset current of the BJT differential amplifier can be written as,
IC2 IC1
IB1 = IB + 0.5IOS and IB2 = IB - 0.5IOS ⇒
IOS = IB2 - IB1 = β - β
F2 F1
IC1+IC2 βF1+βF2
Defining ∆IC =IC2-IC1, IC = 2
, ∆βF =βF2-βF1, and βF =
2
∆ΙC ∆ΙC ∆βF ∆βF
which gives IC1= IC - , IC2= IC + , βF1= βF - , and βF2= βF +
2 2 2 2
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
I + ∆ IC ∆ IC
2 IC ∆ I C ∆ β F
IC -
IOS =
C 2
when ∆IC << IC and ∆βF << βF
∆β F -
∆β F ≈ βF IC - βF
β F + 2 βF - 2
IC1 RC2
Recalling that for the output voltage to be zero that = , then
IC2 RC1
∆Ι C ∆RC
1- 1+
2IC 2RC ∆Ι C ∆Ι C ∆ R C ∆ R C ∆ IC ∆ R C
⇒ 1- 1- = 1+ ⇒
2RC 2RC
= 1+ - =
∆Ι C ∆RC 2IC 2IC IC RC
1+ 2I 1- 2R
C C
Therefore,
IC ∆RC IC ∆βF IC ∆ R C ∆ β F
IOS = -β R - β β = -β R - β
F C F F F C F
Typically ∆βF/βF is about 10% and ∆RC/RC is about 1% giving
IC
IOS = -
βF (0.01+0.1) = -0.11IB ≈ 1.1µA assuming that IB = 10µA
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 9
RD RD RD RD
+ +
vOD vOD
- VOS -
M1 M2 M1 M2
+ + + + + +
v
vin GS1- vGS2 vGS1 vGS2
- vin - -
- -
Circuit
ISS ISS
with no
VSS mismatches VSS DM03
where for vin = 0,
2ID1 2ID2 K’W
V OS = V GS1 -V GS2 = where β = L
β1 +V T 1 - β2 +V T2
Define,
ID1+ID2 β1+ β2 V T1 +V T2
∆ID =ID1-ID2, ID = 2
, ∆β =β1-β2, β =
2
, ∆ V T =V T1 -V T2 and V T =
2
Gives,
∆ΙD ∆ΙD ∆β ∆β ∆VT ∆VT
ID1= ID + , ID2= ID - , β1= β + , β2= β - , V T1 = V T + and V T2 = V T -
2 2 2 2 2 2
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
RD RD RD RD
+ +
vOD vOD
- VOS -
M1 M2 M1 M2
+ + + + + +
vin vGS1 vGS2 vGS1 vGS2
- - vin - -
- -
Circuit
ISS ISS
with no
VSS mismatches VSS DM03
where for vin = 0,
2ID1 2ID2 K’W
V OS = V GS1 -V GS2 = where β =
β1 +V T 1 - β2 +V T2 L
Define,
ID1+ID2 β1+ β2 V T1 +V T2
∆ID =ID1-ID2, ID = 2
, ∆β =β1-β2, β =
2
, ∆ V T =V T1 -V T2 and V T =
2
Gives,
∆ΙD ∆ΙD ∆β ∆β ∆VT ∆VT
ID1= ID + , ID2= ID - , β1= β + , β2= β - , V T1 = V T + and V T2 = V T -
2 2 2 2 2 2
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 11
V OS ∆ V T 2 ∆RD 2 ∆β
2
+ + = 0.0714
V GS -V T = V G S -V T 2RD 2β
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
dV OS d 2ID ∆RD
∆ β -1
2ID ∆RD
∆ β dβ 3 2ID ∆RD ∆ β
=
dT
= dT
β 2RD
+
2β 2β β 2RD
+ =
2β dT 4T β 2RD + 2β
At room temperature and a current of 100µA and β = 200, we get,
dV OS 1·3 0.01 0 . 0 5
= 4·300 + 2 = 75µV/°C
dT 2
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
Device Mismatch in Diff. Amps. (7/1/00) Page 13
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000
SUMMARY
• Mismatch analysis between two components can be performed by defining a difference and average
value of the components and expressing the mismatch in terms of the difference and average value.
• BJT differential amplifiers have both a voltage and current input offset.
• Cancellation of the input offset is difficult because of temperature dependence of the offset.
• The MOS differential amplifier has only input voltage offset but this offset is larger than the BJT
differential amplifier
• The temperature dependence of the MOSFET input offset voltage is about 10 times that of the BJT
• To reduce the value of the amplifier imperfection reflected to the input of the amplifier, make the gain
of the amplifier as large as possible.
ECE 4430 - Analog Integrated Circuits and Systems P.E. Allen, 2000