EE 525 Quiz 5 Dec 14, 2016 Roll #: Solution

Time Allowed: 20 min

A 1 𝑛𝑚 thick 𝑛+ layer of 𝑇𝑖𝑂2 is contacted with 500 𝑛𝑚 thick 𝑖 − 𝑆𝑖 layer at the front while the 𝑖 − 𝑆𝑖
layer is contacted with 1 𝑛𝑚 thick 𝑝+ layer of 𝑁𝑖𝑂 at the back to form a 𝑛+ − 𝑖 − 𝑝+ solar cell. The electron
affinity (𝜒) of 𝑇𝑖𝑂2 is 4.05 𝑒𝑉 and band gap (𝐸𝑔 ) of 𝑇𝑖𝑂2 is 3.2 𝑒𝑉. 𝜒𝑆𝑖 = 4.05 𝑒𝑉 and 𝐸𝐺|𝑆𝑖 = 1.1 𝑒𝑉,
and 𝜒𝑁𝑖𝑂 = 1.45 𝑒𝑉 and 𝐸𝐺|𝑁𝑖𝑂 = 3.7 𝑒𝑉. Assume that 𝑛-type doping in 𝑇𝑖𝑂2 is such that 𝐸𝐹|𝑇𝑖𝑂2 ≈
𝐸𝐶|𝑇𝑖𝑂2 and 𝑝-type doping in 𝑁𝑖𝑂 is such that 𝐸𝐹|𝑁𝑖𝑂 ≈ 𝐸𝑣|𝑁𝑖𝑂 . Mobility of electron (𝜇𝑛 ) and holes (𝜇𝑝 ) is
set at 10 𝑐𝑚2 ⁄𝑉 ⋅ 𝑠, and minority carrier lifetime for electrons (𝜏𝑛 ) and holes (𝜏𝑝 ) is set at 10−9 𝑠 inside
silicon. For this device:
a) Draw the energy band diagram inside silicon. (5 Marks)
b) Calculate the built-in voltage (𝑉𝑏𝑖 ) for this device. (2 Marks)
c) Calculate the electric field (𝜀) inside silicon. (3 Marks)
d) Calculate the carrier drift length (𝐿𝑑𝑟𝑖𝑓𝑡 = 𝜇 × 𝜏 × 𝜀) inside silicon. (2 Marks)
+
e) If 𝑖 − 𝑆𝑖 is now 𝑛 doped such that 𝐸𝐹|𝑆𝑖 ≈ 𝐸𝐶|𝑆𝑖 , draw the energy band diagram diagram for this
device. (5 Marks)
f) Calculate minority carrier diffusion length (𝐿) inside silicon. (3 Marks)

a)

1
b) 𝑉𝑏𝑖 = (𝐸𝐹|𝑇𝑖𝑂2 − 𝐸𝐹|𝑁𝑖𝑂 ) = 4.05 − 5.15 = 1.1 𝑉
𝑞
1 𝑑𝐸 𝑉 1.1
c) 𝜀 = ⋅
𝑞 𝑑𝑥
= 500×10𝑏𝑖−7 𝑐𝑚 = 500×10−7 = 22 𝐾𝑉⁄𝑐𝑚
d) 𝐿𝑑𝑟𝑖𝑓𝑡 = 10 × 10−9 × 22 × 103 = 2200 𝑛𝑚
e) Energy band diagram is shown in figure.
𝐾𝑇
f) 𝐿𝑑𝑖𝑓𝑓 = √𝐷𝜏 = √ × 𝜇 × 𝜏 = √0.0259 × 10 × 10−9 = 160 𝑛𝑚
𝑞