MM318-2020-S1

Time: 3 hrs End-Semester Exam Points:30

PART-A (Multiple Choice Questions) (10)

Choose the correct answer/s. Rough work should be submitted with the answer sheet.
1) Consider a regular periodic arrangement of atoms in which each atom contains electrons up to
the n=3 energy level. If the atoms are brought closer together, the n = ____ shell will begin to
interact initially. Since two electrons cannot have the same quantum number, the discrete
energy must split into a band of energies. The Kronig-Penny model models the energy band
formation in a 1D crystal by assuming _____ potential function. To solve the wave equation,
it uses ______. Solving the equation gives an E versus _____ plot which can explain the energy
band formation.
(A) 3, a periodic, Pauli’s exclusion principle, k
(B) 3, an infinite, Pauli’s exclusion principle, t
(C) 3, a periodic, Bloch’s theorem, k
(D) 3, a parabolic, Bloch’s theorem, t

2) The presence of multiple bands in a solid is a consequence of

(A) Electron-Ion interaction in solids
(B) Impurities in solids
(C) Periodicity of the lattice
(D) Collision of electrons with the ionic core

3) Consider an ideal intrinsic semiconductor in thermal equilibrium. Let n denote the

concentration of electrons in the conduction band while p denotes the number of holes in the
valence band and the ratio of the effective mass’ (m*n/m*p = 2). At room temperature, we
have
(A) n < p
(B) n ≈ p but pn
(C) n > p
(D) n = p
4) The given electronic band structure is that of:

(A) Metal ,
(B) Intrinsic semiconductor,
(C) Degenerate semiconductor (n-type),
(D) Degenerate semiconductor (p-type)

5) Non hydrogen like impurities when added to an intrinsic semiconductor,

(A) introduce quantum states that are close to the edges of the forbidden band.
(B) introduce quantum states that are near the center of the forbidden band.
(C) increase the energy of electrons in the valence band.
(D) increase the energy of electrons in the conduction band.

6) The Hall Coefficient vs T data of a semiconductor is provided below

8.0x10-8

7.5x10-8

7.0x10-8

6.5x10-8
RH (m3/C)

6.0x10-8

5.5x10-8

5.0x10-8

4.5x10-8

300 400 500 600 700 800

T (K)
 (A) Intrinsic charge carriers are dominant above 600 K, Eg can be estimated from data below
600 K.
(B) Extrinsic charge carriers are dominant above 600 K, E g can be estimated from data below
600 K.
(C) Intrinsic charge carriers are dominant above 600 K, E g can be estimated from data beyond
600 K.
(D) Extrinsic charge carriers are dominant above 600 K, E g can be estimated from data beyond
600 K.

7) The ionization energy of a semiconductor vs. charge carrier concentration is shown below

the lowering of ionization energy with increasing n is due to

(A) Merging of the defect band with the material band
(B) Change in the Fermi level with increased doping.
(C) Decrease of the band gap
(D) Decrease in energy between highest filled defect band and material band extrema

8) Doping of Mg2Si with (i) Na, (ii) Zn, (iii) Sb will result in
(A) (i) p-type, (ii) isovalent, (iii) n-type doping
(B) (i) p-type, (ii) n-type, (iii) n-type doping
(C) (i) n-type, (ii) p-type, (iii) n-type doping
(D) (i) p-type, (ii) p-type, (iii) isovalent doping
9) Arrange the following iso-structural semiconductors in increasing order of band-gap (ZnSb,
Zn0.5Cd0.5Sb, ZnAs, CdSb)
(A) CdSb<Zn0.5Cd0.5Sb<ZnSb<ZnAs
(B) ZnAs<ZnSb<Zn0.5Cd0.5Sb<CdSb
(C) ZnSb<Zn0.5Cd0.5Sb<ZnAs<CdSb
(D) None of the above

10) The dielectric constant in the Infra-red region will have contributions from the following
Polarization mechanisms
(A) Electronic and Ionic polarization
(B) Electronic, Ionic and Bipolar polarization
(C) Only Electronic polarization
(D) Ionic and Bipolar polarization

PART-B (Numericals) (15)

11) The schematic band structure of Mg2Sn (FCC lattice) is provided below

(Band Mass: m*C1= 1.2m, m*C2 = 0.5m, m*C3= 0.25m, m*V1= 1.1m, m*V2= 0.9 m , m*V3= 0.08m)
(Energy gaps: Eg=0.4 - 3x10-4.T eV,
E1=0.02 eV, E2 = 0.05 eV , E0= Eg+0.1 eV )

(a) Suppose Mg2Sn is doped with Sb resulting in the reduced Fermi level value of 1 (at 500K).
Find the concentration of the majority carriers at 500 K.
(b) Find the concentration of the minority charge carriers at 500 K.
(c) Find the amount of Antimony required to obtain the given charge carrier concentration.
(Mg2Sn=3.4 g/cc, Mg: 24.305 a.m.u., Sn: 118.71 a.m.u., Sb: 121.76 a.m.u.)

12) The crystal structure of CsCl is shown below:

(a) Mention the lattice type and basis

(b) The Cesium Chloride conventional unit cell has a lattice parameter (a) of 0.412 nm. The
electronic polarizability of Cs+ and Cl- ions are 3.35x10-40 and 3.40x10-40 F.m2
respectively. The relative permittivity of NaCl at low frequencies is 7.56. Calculate the
mean ionic polarizability per ionic pair.
(c) What is the dielectric susceptibility at optical frequencies?
 PART-C (Derivation) (5)

∞ 3/2 𝜕𝑓
𝑘 2 ∫0 𝜖 𝜏 (𝜖−𝜂)2 (𝜕𝜖 )𝑑𝜖 ∞ 3/2
𝑘 ∫0 𝜖 𝜏 (𝜖−𝜂) (𝜕𝑓 )𝑑𝜖
13) Given 𝐿 =( ) ∞ 𝜕𝑓 − 𝑆 2; where 𝑆 = (− ) ∞ 3/2 𝜕𝑓
𝜕𝜖
𝑒 ∫0 𝜖3/2 𝜏 (𝜕𝜖 )𝑑𝜖 𝑒 ∫0 𝜖 𝜏 (𝜕𝜖 )𝑑𝜖

Derive the expression for the Lorenz number (L) in terms of the Fermi Integrals for ionized impurity
scattering of electrons.

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h=6.6262 x 10-34 Js
ħ = 1.054571x10-34 Js
m = 9.1095x10-31 kg

e = 1.60219x10-19 C
k = 1.3807x10-23 J/K ; 8.617x10-5 eV/K