Single-layer substrate integrated waveguide

directional couplers
Z.C. Hao, W. Hong, J.X. Chen, H.X. Zhou and K. Wu

Abstract: Novel single-layer planar directional couplers based on substrate integrated waveguide
(SIW) technology are presented. These proposed couplers are totally realised in single-layer
dielectric substrate with metallicvias, and fabricated using a standard PCB process. Prototypes of

3 dB,
6 dB and
10 dB SIW directional couplers are designed, fabricated and measured. It is
concluded from the simulated and measured results that these couplers show good performances
with broad operation bandwidth, low insertion loss, low return loss and high isolation etc. The
characteristics of compact size and planar form make such SIW directional couplers can be easily
integrated in microwave and millimetre-wave planar circuits.

1 Introduction technique is a promising technique for designing microwave

Rectangular waveguide components have been widely used
in microwave and millimetre-wave communication system,
radar and other equipment with their salient features such
as low insertion loss, high quality factor (Q-factor) and high
power capability etc. However, owing to their bulky size,
strict requirement of manufacturing precision and non-
planar structure, it is difficult to be integrated in modern
microwave and millimetre-wave integrated circuits. Benefit-
ing from the properties of low profile, moderate insertion
loss, and low cost, etc., microstrip-like circuits are presently
the main integration choice in microwave and millimetre-
wave circuits. Unfortunately, the printed circuit suffers from
significant trade-offs between costs, size and performance at
millimetre-wave frequency and it is sensitive to the outside
interference caused by radiation of other passive compo-
nents and active devices in the same substrate.
Recently, there is growing interest in a novel planar
circuit technique called substrate integrated waveguide
(SIW) as it shares many of the advantages with printed
circuits such as low cost, small size etc. and being easily
integrated in millimetre-wave integrated circuits [1–33].
Additionally, since the SIW components are covered by
metal surfaces on both sides of the substrate, they takes the
merits of low insertion loss, extremely low radiation loss,
and insensitive to outside interference etc. A similar
technique is also known as photoimageable thick films [2,
25], low-temperature co-fired ceramics (LTCC) waveguide
[26–30], post-wall waveguide [31, 32], and laminated
waveguide [33]. Many passive components and active
devices based on SIW technology, such as antennas
[8–12], filters [2, 12–18], diplexers [19], power dividers [20],
SIW-microstrip transitions [21], oscillators [22], millimetre-
wave SIW ferrite phase shifter [23] and couplers [24] have
been reported recently. These studies show that the SIW
r The Institution of Engineering and Technology 2006
IEE Proceedings online no. 20050171
doi:10.1049/ip-map:20050171
Paper first received 17th July 2005 and in revised form 3rd April 2006
The authors are with the State Key Lab. of Millimetre Waves, Dept. of Radio
Engineering, Southeast University, Nanjing, 210096, People’s Republic of China
E-mail: zchao@emfield.org
426
and millimetre-wave components and circuits.
In this paper, two types of novel single-layer SIW
directional couplers are presented. The parameters which
determine the coupler’s performance have been studied and
prototypes for
3 dB,
6 dB and
10 dB millimetre-
wave SIW directional couplers with different topologies are
designed. These SIW couplers are fabricated on a single-
layer substrate using a standard print-circuit-board (PCB)
process and measured with vector network analyser (VNA).
Simulated and measured results that show these couplers
have good performances with broad operation bandwidth,
low insertion losses, low return losses and high isolations
are provided.
2 Design of SIW directional couplers
Figure 1 shows the configurations for SIW directional
couplers with its geometric parameters. The SIW directional
coupler is realised by two SIWs with a common wall on
which an aperture is utilised to realise the coupling between
two SIWs which are mainly working with TE10-like modes.
In Fig. 1, port 1 is the input port, port 2 is named as the
through port, port 3 is the coupling port and port 4 is used
as an isolation port. The metallic vias which synthesised side
walls of two SIWs have diameters of Dvia and the spaces
between them are Svp. Cvia and Cvp are the diameter and
space of vias which synthesised the SIW coupler’s common
wall, respectively. As shown in Fig. 1a, the aperture width
Waperture and metallic-via diameter Cvia are adopted to
control the coupling between port 1 and port 3. In Fig. 1b, a
metallic-via with diameter IDvia is placed at the centre of
the coupling aperture to decrease the coupling of port 3.
Then couplers with weak-coupling can be designed.
2.1 Design of SIW
It should be designed carefully to ensure SIWs of the
coupler support TE10-like mode exclusively in the operating
frequency range. The SIW is made of numerous metallicvias
in a substrate, and it requires huge computer resource to
simulate the SIW components with electromagnetic full-
wave algorithms. Since the E-field distribution in a SIW is
like that in a traditional rectangular waveguide, we can
initially design SIW components using an equivalent
IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 5, October 2006

Fig. 1 Configuration for the proposed strong and weak-coupling
SIW couplers with geometric parameters
a Proposed strong-coupling SIW coupler
b Proposed weak-coupling SIW coupler
rectangular waveguide model to reduce design complexity.
In the millimetre-wave frequency band, the geometric
parameters for SIWs in directional coupler can be chosen
using an empirical formula [5, 6]
Dvia2 Dvia2
Weff ¼ WSIW
1:08  þ 0:1 
Svp WSIW
where W eff is the width of the corresponding traditional
rectangular waveguide, and the empirical formula is very
accurate when (Svp/Dvia) is smaller than 3 and (Dvia/
WSIW) is smaller than 0.2 [5, 6].
SIW components can be integrated with other SIW
components such as SIW filters and SIW antennas without
any transition. However, in order to measure these
components or integrate them with microstrip circuits or
active IC chips, a SIW–microstrip transition is necessary,
and it can be designed by matching impedances between
SIW and 50 O microstrip [19, 21]. Naturally, this will
increase the insert loss of SIW components.
2.2 Parameter studies for SIW directional
couplers
We studied the parameters such as Waperture, Cvia and
IDvia with an equivalent rectangular waveguide model to
initially design the proposed coupler. As shown in Fig. 2, we
can effectively control the output coupling at port 3 by
adjusting Waperture, here the width of the corresponding
rectangular waveguide is 5.0 mm, the thickness of the
IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 5, October 2006
Fig. 2 Simulated S31 with different Waperture
Fig. 3 Simulated S31 with different Cvia
common wall is 0.4 mm, the relative permittivity and
thickness of substrate are 2.2 and 0.25 mm, respectively. It
can be seen from Fig. 2 that the coupling of port 3 decreases
with Waperture becoming small.
ð1Þ
The thickness of the common wall which equals to Cvia is
also helpful to control the coupling between port 1 and port
3. We studied the thickness from 0.4 mm to 0.8 mm and the
couplings are shown in Fig. 3 where the coupling aperture
Waperture is chosen as 6.2 mm and the width of
corresponding rectangular waveguide is 5.0 mm. It can be
seen from Fig. 3 that the coupling between port 1 and port
3 will decrease as Cvia increasing. Additionally, the coupling
is insensitive to Cvia compared with Waperture. Then in the
design of a SIW directional coupler, the Cvia can be
adopted to slightly tune the coupling of port 3.
In above simulation, it can be found that when the
coupling between port 1 and port 3 becomes more weakly,
the return loss and isolation response will become worse,
and then it is difficult to design a weak-coupling coupler
using the configuration shown in Fig. 1a. To overcome this
difficulty, an extra metallicvia can be added to improve the
return loss as shown in Fig. 1b. As an example,
8.5 dB
couplers are designed using configurations in Figs. 1a and
1b, respectively. Parameters for these couplers are listed in
Table 1 and simulated results are shown in Fig. 4. It can be
clearly seen from Fig. 4 that although S21 and S31 are
similar for both kinds of couplers, the coupler which takes
427
Table 1: Geometric parameters for
8.5 dB directional the same working-frequency ranges; can take the same
couplers values, we used different widths for those SIWs in our
applications. This is mainly caused by following reasons: 1.
Parameters for With tuning Without tuning Owing to limitations of the fabrication process in which
corresponding metallicvia metallicvia diameters of metallicvias should be changed with 0.1 mm or
rectangular waveguide
integral-multiple of 0.1 mm, diameters Cvia for metalvias in
coupler
the coupler’s common wall cannot be arbitrarily chosen.
Width of rectangular 5.0 5.0 And then the widths of SIWs are tuned to get good
waveguide (mm) performances to ensure SIW couplers can be accurately
Width of coupling 6.2 5.0
fabricated using traditional printed circuits board (PCB)
aperture (mm) process; 2. Because diameters of metallicvias which
synthesise the two side walls of SIW have different values
Thickness of common 0.4 0.3
wall (mm)
( for example Cvia is different with Dvia in our design),
performances of SIW are different to that of corresponding
Diameter of 0.3
rectangular waveguide. Then SIW’s widths should be
tuning metallicvia (mm)
changed a little.
Height of rectangular 0.25 0.25 A
3 dB SIW directional coupler with the configuration
waveguide (mm)
shown in Fig. 1a is firstly designed and its geometric
parameters are listed in Table 2, where Wtaper and Ltaper
are the width and length of SIW-microstrip transition,
respectively. Simulated results are presented in Fig. 5
which shows this directional coupler can be operated from
24.0 GHz to 27.0 GHz with return loss less than
12.5 dB.
Both of the magnitudes of S21 and S31 are approximately

4.0 dB, and the isolation of port 4 is less than
15 dB
within the operating frequency range. In simulation, four
SIW-microstrip transitions are introduced, which will cause
the extra insertion loss to the coupler.
As mentioned above, by narrowing the coupling
aperture, the coupling between SIWs will be decreased. A

6 dB millimetre-wave SIW directional coupler is designed
using the configuration shown in Fig. 1a and the geometric
parameters are given in Table 3. Simulated results are
shown in Fig. 6, where both return loss and isolation are
less than
19 dB within the frequency range from

Table 2: Geometric parameters for the
3 dB SIW direc-

Fig. 4 Simulated S-parameters for
8.5 dB SIW couplers tional coupler

Dvia (mm) 0.3 Wapeture (mm) 9.9

the configuration shown Fig. 1a has bad return loss and Svp (mm) 0.6 Wtaper (mm) 1.25
isolation response, and these responses can be greatly Cvia (mm) 0.4 Ltaper (mm) 2.75
improved by using configuration shown in Fig. 1b. Cvp (mm) 0.8 h (mm) 0.25
From the above investigations, we can conclude that the
WSIW (mm) 5.9 W 50 (mm) 0.72
coupling between port 1 and port 3 is mainly affected by
Waperture, and Cvia can be used to slightly adjust the
coupling of port 3. To design SIW directional couplers with
weak coupling, an extra metallicvia may be placed at the
centre of the coupling aperture to decrease the coupling
between port 1 and port 3 with improved return loss and
isolation response. Then by properly choosing the initial
parameters such as Waperture, Cvia and IDvia with an
equivalent rectangular waveguide model, geometric para-
meters for SIW directional couplers can be obtained by a
simple optimising process with full-wave electromagnetic
(EM) solvers.

2.3 Design examples

In this paper, SIW directional couplers are designed on
Rogers RT 5880 substrate with er ¼ 2.2 and thickness of
0.25 mm, and the coupling aperture and the diameter of the
extra metallicvia are optimised by commercially available
software, High Frequency Structure Simulator (HFSS).
Widths of SIWs, which determine the SIW components’
working frequency ranges, are initially obtained from (1).
Although SIWs’ widths in different couplers, which have Fig. 5 Simulated results for the
3 dB SIW directional coupler

428 IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 5, October 2006
Table 3: Geometric parameters for the
6 dB SIW direc- design couplers with weak coupling. As an example, a
tional coupler
10 dB SIW directional coupler is designed by optimising
the diameters of the extra metallicvia, the size of the
Dvia (mm) 0.3 Wapeture (mm) 6.4 coupling aperture and the diameter IDvia. Its geometric
Svp (mm) 0.6 Wtaper (mm) 1.25 parameters are listed in Table 4, and simulated results are
Cvia (mm) 0.4 Ltaper (mm) 2.75 shown in Fig. 7. It can be seen from Fig. 7 that the return
Cvp (mm) 0.8 h (mm) 0.25 loss and isolation are lower than
20 dB from 23.0 GHz to
27.0 GHz. The output of port 3 is
10.15 dB with a ripple
WSIW (mm) 5.1 W 50 (mm) 0.72
of 0.2 dB in the operating frequency band.

3 Experiment results

The prototypes of
3 dB,
6 dB and
10 dB SIW

directional couplers are fabricated on a single-layer
substrate using a traditional PCB process in which the
minimum radius for the metallicvia is 0.15 mm. Using this
fabricating process, metallicvias in SIW couplers can be
located at the design position with a high accuracy of
0.01 mm and SIW-microstrip transitions can be realised
with an error of 0.05 mm,. Photographs for
3 dB and

10 dB directional couplers are presented in Figs. 8a
and 8b, respectively.
We measured these directional couplers from 22.0 GHz
to 28.0 GHz with an Agilent 8363B vector network analyser
(VNA). In the measurement processes, two measured ports
are connected to the VNA with two 2.4 mm connectors,
respectively. And other ports are terminated with 50 O

Fig. 6 Simulated results for the
6 dB SIW directional coupler

Table 4: Geometric parameters for the
10 dB SIW direc-

tional coupler

Dvia (mm) 0.4 Wapeture (mm) 6.9

Svp (mm) 0.8 Wtaper (mm) 1.25
Cvia (mm) 0.7 Ltaper (mm) 2.75
Cvp (mm) 1.1 h (mm) 0.25
WSIW (mm) 5.45 W50 (mm) 0.72
IDvia (mm) 0.3

Fig. 7 Simulated results for the
10 dB SIW directional coupler

23.0 GHz to 28.0 GHz, S31 varies from
5.8 dB at

23.0 GHz to
6.4 dB at 28.0 GHz and the magnitude of Fig. 8 Photograph of the
3 dB and
10 dB SIW directional
S21 is approximately
3.0 dB. couplers
By employing an extra metallicvia at the centre of the a
3 dB coupler
aperture, the configuration shown in Fig. 1b can be used to b
10 dB coupler

IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 5, October 2006 429
matching loads. Generally, those 2.4 mm connectors will
cause leakage losses owing to model transform between
coax and microstrip, and it can be previously calibrated. To
estimate insert losses caused by SIW-microstrip transitions,
5.0 cm and 8.0 cm SIWs with two SIW-microstrip transi-
tions are firstly designed and measured, respectively. By
comparing these measured results, insert losses of the SIW
and SIW-microstrip transition can be deduced, respectively.
Figure 9 shows the insert losses for two SIW-microstrip
transitions. The whole insert loss caused by those transitions
is about
0.6 dB with a ripple of 0.2 dB over the whole
working frequency band.
The measured results for SIW couplers are presented in
Figs. 10–13, respectively. Figure 10 shows magnitude
responses for the S-parameters of the
3 dB SIW
directional coupler whose geometric parameters are listed
in Table 2. The magnitudes of S21 and S31 are nearly same,
which are
4.2 dB at 23.0 GHz and
3.9 dB at 27.0 GHz, Fig. 11 Measured results for the phase difference between the S21
respectively. As mentioned above, the increase of insertion and S31 of
3 dB SIW directional coupler
loss is caused by the SIW-microstrip transitions and
dielectric loss.
Since the phase difference between S21 and S31 is
important in
3 dB coupler’s application, we have also
measured it and the measured results are shown in Fig. 11.
It can be seen from Fig. 11 that the phase difference
between S21 and S31 varies within ten degrees, and it is
nearly 90 degrees from 23.0 GHz to 27.0 GHz.

Fig. 12 Measured results of the
6 dB SIW directional coupler

Fig. 9 Insertion losses for two SIW-microstrip transitions

Fig. 13 Measured results of the
10 dB SIW directional coupler

The measured results of the
6 dB SIW directional

coupler are presented in Fig. 12, both return loss
and isolation response are lower than
17.0 dB from

23.0 GHz to 28.0 GHz. The magnitude of S31 is
approximately
5.9 dB at 23.0 GHz,
6.1 dB at
Fig. 10 Measured results for the
3 dB SIW directional coupler 25.5 GHz and
5.8 dB at 28.0 GHz, respectively.
430 IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 5, October 2006
 The measured results of the
10 dB SIW directional
coupler are shown in Fig. 13. As shown in the photograph,
this directional coupler takes the configuration shown
in Fig. 1b. The isolation response is lower than
18.0 dB
from 22.0 GHz to 28.0 GHz, and S11 is better than

15.0 dB in whole operating frequency band. The
magnitude of S31 is approximately
10.0 dB with a ripple
of 0.5 dB, and S21 varies from
2.4 dB at 22.0 GHz to

1.4 dB at 27.0 GHz. The measured results show the
relative bandwidth of the 10 dB directional coupler is
approximately 24%.
4 Conclusions
Two types of single-layer planar millimetre-wave SIW
directional couplers are presented in this paper. Prototypes
of these directional couplers with different topologies are
designed, fabricated using a PCB process and measured
with a VNA. Measured results show these types of
directional couplers have good performance in broad
operating bandwidths. These proposed directional couplers
are totally realised by metallicvias in single-layer substrate,
and take the advantages of compact size, low-weight and
low-cost. It is a favourable choice for designing microwave
and millimetre-wave planar circuits.
5 Acknowledgment
The authors are grateful to H.-J. Tang for his collaborations
during the measurement of SIW couplers.
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