MSE13 Chapter 04 PDF

Course Outline
1. Introduction
2. Materials of Microsystems Engineering
3. Clean Rooms/Yield
4. Thin Films
5. Lithography
6. Surface Micromachining
7. Bulk Micromachining
8. LIGA
9. Packaging Technology
Microsystems Engineering Prof. Dr. Michael Rüb 1

Chapter 02 Fachhochschule Jena
4. Thin Films
4.1. Introduction
4.2. Oxidation
4.3. Thermal Vapor Deposition
4.4. Chemical Vapor Deposition
Microsystems Engineering Prof. Dr. Michael Rüb

What is a Thin Film?
Typical layer thicknesses:

-ranging from a few atomic monolayers
-to about 20µm
Extreme examples:
- Gate Oxide in microelecronics
(a few atomic monolayers only)
-Resist layer thickness at LIGA technique
(up to 1-3mm)
Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

2. Dünnschichttechnik Fachhochschule Jena
Morphology
• Morphology (shape and organisational principle of the layer)
-> Surface diffusion: atoms may diffuse on surfaces

(similar to leaves floating on water surfaces)
-> Process temperature controls the energy for surface mobility
-> Surface diffusion determines

Growth process
Step coverage

Structure Zone Movchan and Demchishin
Investigations in high vacuum (10-6 – 10-7mbar)
Thermal Evaporation of Metals

Morphology: Transistion Temperatures
transition to
evaporation
material
For high melting points of the evaporation material zones 2 and 3

cannot be reached anymore
source [3]

Structure Zone Modell by Thornton
• Investigation of film morphology/structure at sputtered layers;
Process pressures varied between 10mbar – 400mbar
• Three zone model as a function of temperature coefficient T/Tm and

the partial pressure of the atmosphere

Kantenbedeckungstypen
Types of Step Coverage
a. ideal case, uniform step coverage due to
high surface mobility
b. non-uniform step coverage by reduced surface

mobility along with large mean free path λ>>h
c. non-uniform step coverage due to reduced sur-

face mobility along with low mean free path λ>>h
low high
pressure pressure
growth characteristics depend on

-> surface mobility
-> solid angle

Application Example: Trench IGBT
Conformal deposition (LPCVD) of polycrystalline silicon in a 6µm deep trench
Metal
AlSi
Source
n+ n+
p+
p-body p-Body Poly-Gate
Trenchmaße:
Tiefe 5,2 µm
Breite 1,5 µm
-
n

4. Thin Films
4.1. Introduction
4.2. Oxidation
4.3. Thermal Vapour Deposition

Classification of Processes for Thermal Expansion

Bandwidth of methods for production of SiO2
layers
Thermal Oxidation
High quality pure oxide
High temperature required (700° - 1200°C)
Alternatives:
Sputtering
LPCVD Low Pressure Chemical Vapour Deposition
PECVD Plasma Enhanced Chemical Vapour Deposition

Oxidation – Basic Processes
1. Diffusion of oxygen/water
to oxide surface
2. Diffusion of oxygen/water through

already formed oxide to interface
3. Chemical reaction at interface
oxidizing reaction only at

Si/SiO2 interface
-> 45% of silicon consumption

-> 55% volume growth into ambient

Oxidation – Wet Oxidation
H2O molecule is smaller than O2 molecule

-> thus higer diffusion rate towards interface
-> higher reaction rate
„Oxide contamination“ by water

-> reduced breakdown voltage
Due to increase growth rates, wet oxidation is used for the

production of thick oxide layers

Oxidation Model According to Deal and Grove

Temperature Dependence of Rate Constants

In the linear rate constant
regime the growth rate
is dependent on crystal
orientation
(111) silicon oxidizes about
1.7 times faster than (100)
silicon
But keep in mind, for the

parabolic regime the diffusion
through the SiO2 layer dominates

aus
Semiconductor Technology
Handbook
6th edition, 1993
Trapp, Lopp, Blanchard

aus
Semiconductor Technology
Handbook
6th edition, 1993
Trapp, Lopp, Blanchard

Process Problem: Segregation
Phosphorus: K=10, i.e. in Si the amount

Segregation coefficient: of dissolved P is 10 fold larger than in
SiO2
-> „Pile up“
Boron: K< 1, i.e. in Si less B than in SiO2

is dissolved
-> „Pile down“
Open channels are oxidized ant thus can be transfered into
buried channels

4. Thin Films
4.1. Introduction
4.2. Oxidation
4.3. Thermal Vapor Deposition

Classification of Manufacturing Techniques
- incomplete -
Creation of Thin Films
„conversion“ Deposition
other
thermal
oxidation vapor dep galvanic

Thermal Vapor Deposition
Fundamental Principle of Thermal

Vapor Deposition (Evaporation)
1. Thermal evaporation of
material (1000°C – 3000°C)
2. Transfer of vapor particles to

substrate
3. Condensation on „cold“
substrate (100-400°C) and
on chamber walls
source [3]

[cited, adapted from (1)]

Evaporation from „Boat“
• Electrical current through boat
• Ohmic resistance leads to

heating up
• Boat is usually made of tungsten

Tmelt, W = 3422°C
• Partially covered boat prevents

spilling from crucible
• Evaporation rate strongly dependent

on temperature and thus hard to
control
source [3]

e-beam Evaporation
electron beam is focused on a small area of the starting material
-> material is only locally melted
-> no film contamination due to deposition of boat material
-> very high temperatures can be achieved
source [3]

Properties of Electron Beam Evaporation
Advantages:
• Relatively thick layers are possible in one step
• High deposition rates due to high energy electron beam
(e.g.0.5µm/min for Al)
• Vapor deposition in UHV
-> no residual gas built into layer
Disadvantages:
• Deacceleration and deflection of electrons induces bremsstrahlung.
(i.e. x-rays which may damage the substrate)
• Higher equipment complexity
source [3]

Film Thickness Variation for an Arrangement for
Small Substrates
small area source
Special Case:
Source and substrate are arranged in parallel
 m  cos   cos  m H 2
l    
    r 2

    H 2  L2 
2

Special Arrangement
Small area source
 m  cos   cos 
l  
     r 2
r
we get: cos   cos  
2  r0
2
 m  cos   cos   m  1  r 
l      2  
         r  2r0 
2
r
m
l
4      r02
Deposition rate independent of position!!

Condensation on Substrate
Particle hits surface -> adsorption
Suface diffusion enables „random walk“ and search for energetically

favourable location.
-> Cohesional energies between particles in general is larger than

the binding energy of particles to the substrate
-> Formation of condensationnuclei on imperfection
-> island like arranged nuclei grow and finally form a continous film
source [3]

Morphology: Transistion Temperatures
transition to
evaporation
material
For high melting points of the evaporation material zones 2 and 3

cannot be reached anymore
source [3]

Principal Setup of a Vapor Deposition Equipment
Essential Characteristics:
• vacuum system
• evaporation source
• shutter, for process time control
• oscillation quartz for online
thickness control
• rotating substrate supports

• heating of recipient
source [3]

4. Thin Films
4.1. Introduction
4.2. Oxidation
4.3. Thermal Vapour Deposition

Classification and Applications of CVD
Techniques

Boundary Layer – Prantl Layer

Temperatur und Druck ändern das Reaktionsregime

Epitaxial coating of deep trenches – conformal deposition needed
Meßw ert für

750/800/850°C vom: 12.3.98
Abscheiderate 40T, 25slm H2, EPi6C
900/1000/1100°C vom: 16.3.98
10000,00
reaktionskontrolliert: AR ~ e-E/kT
1000,00
Abscheiderate (nm/min)
0,100
0,400
100,00
0,700
0,900
10,00
1,00
0,700 0,750 0,800 0,850 0,900 0,950 1,000
1000/Temp (K)


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Course Outline

Microsystems Engineering Prof. Dr. Michael Rüb 1

Microsystems Engineering Prof. Dr. Michael Rüb

Typical layer thicknesses:

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

-> Surface diffusion: atoms may diffuse on surfaces

-> Process temperature controls the energy for surface mobility

-> Surface diffusion determines

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

For high melting points of the evaporation material zones 2 and 3

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

• Three zone model as a function of temperature coefficient T/Tm and

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

b. non-uniform step coverage by reduced surface

c. non-uniform step coverage due to reduced sur-

growth characteristics depend on

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

p-body p-Body Poly-Gate

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

Physikalische Technologien Mikrotechnik Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb 11

LPCVD Low Pressure Chemical Vapour Deposition

PECVD Plasma Enhanced Chemical Vapour Deposition

Microsystems Engineering Prof. Dr. Michael Rüb 12

2. Diffusion of oxygen/water through

3. Chemical reaction at interface

oxidizing reaction only at

-> 45% of silicon consumption

Microsystems Engineering Prof. Dr. Michael Rüb 13

H2O molecule is smaller than O2 molecule

„Oxide contamination“ by water

Due to increase growth rates, wet oxidation is used for the

Microsystems Engineering Prof. Dr. Michael Rüb 14

Microsystems Engineering Prof. Dr. Michael Rüb 15

Microsystems Engineering Prof. Dr. Michael Rüb 16

But keep in mind, for the

Microsystems Engineering Prof. Dr. Michael Rüb 17

Microsystems Engineering Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb

Phosphorus: K=10, i.e. in Si the amount

Boron: K< 1, i.e. in Si less B than in SiO2

Microsystems Engineering Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb

Fundamental Principle of Thermal

2. Transfer of vapor particles to

Microsystems Engineering Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb 25

• Electrical current through boat

• Ohmic resistance leads to

• Boat is usually made of tungsten

• Partially covered boat prevents

• Evaporation rate strongly dependent

Microsystems Engineering Prof. Dr. Michael Rüb

-> material is only locally melted

-> no film contamination due to deposition of boat material

-> very high temperatures can be achieved

Microsystems Engineering Prof. Dr. Michael Rüb

Microsystems Engineering Prof. Dr. Michael Rüb

small area source

Microsystems Engineering Prof. Dr. Michael Rüb

Deposition rate independent of position!!