Chapter 2: Audio frequency power amplifiers

2.1 Introduction

Class B operation
Class A operation

Class AB operation Class C operation

In class C power amplifier, the active element

conducts for less than one half cycle of the input
signal. Typically, the conduction angle is from
80° to 120°. The reduced conduction angle
improves the efficiency (theoretically around
90%) but causes a lot of distortion and is not
appropriate for use in audio applications. The
most common application of the class C
amplifier is the radio frequency circuits where
there are additional tuned circuits for retrieving
the original input signal and the distortion
caused by the amplifier has little effect on the
final output.
 Class D amplifier

Class A AB B C D
Operating cycle 360° 180° to 360° 180° Less than 180° Pulse operation
Power 25(50)% 25(50)-78.5% 78.5% Typically over
efficiency 90%

2.2 Single transistor amplifier

PCC = VCCICQ
1 1
Po = VCEQICQ = VCCICQ
2 4
P
Efficiency  = O = 25%
PCC

Series-fed class A amplifier

Efficiency
2
P V  VCEmin 
 = O = 50  CEmax  %
PCC  VCEmax  VCEmin 

Transformer-coupled class A amplifier

2.3 Push-pull amplifier

The output stage of a typical push-pull amplifier consists of two identical BJTs or MOSFETs one
sourcing current through the load while the other one sinking the current from the load. Push-pull
amplifiers are superior over single ended amplifiers (using a single transistor at the output for
driving the load) in terms of distortion and performance. Push-pull amplifiers are commonly used
in situations where low distortion, high efficiency and high output power are required.

Class B push-pull amplifier

Class AB push-pull amplifier

Cross over distortion is a type of

distortion commonly seen in
class B amplifier configurations
where the transistors are biased
at cutoff point. The voltage
across their BE junction remains
zero during the zero input
condition. As a result, portions of
the input waveform that are
below 0.7V (cut in voltage) will
be cancelled and so the
corresponding portions will be
absent in the output waveform
too. In class AB amplifier, the
biasing resistors are so selected
that the transistors are biased just
at the cut in voltage (0.7V). This
reduces the time for which both
transistors are simultaneously
OFF (the time for which input
signal is between (-0.7V and
 +0.7V) and so the cross over
distortion gets reduced.

Quasi-complementary push-pull
transformerless power amplifier.
Complementary symmetry push-pull circuit using
Darlington transistors.

2.4 Power transistor heat sinking

Typical power derating curve for silicon transistors.

 OTL (Output Transformer-Less) amplifiers

Problems
1) Consider a transformer-coupled class A amplifier which drives a 16-Ω speaker through a 3.87:1
transformer
a. Draw the circuit diagram using an npn transistor.
b. Calculate the effective ac load (seen by the transistor connected to the larger turn side of the
transformer).
c. Using a power supply of VCC = 36 V, the circuit delivers 2W to the load. Calculate the power
across the transformer primary, the rms values of load and primary current, the rms values of
load and primary voltage, the efficiency of the circuit if the bias current is ICQ = 150 mA.
2) Consider a class B npn push-pull power amplifier using transformer-coupled input. The power
supply is VCC = 25V. The load resistance is 8-Ω.
a. Draw the circuit diagram.
b. The amplifier provides a 22-V peak signal to the load. Determine input power, output power
and circuit efficiency.
 c. Determine maximum input power, maximum output power and maximum circuit efficiency.
3) Sketch the circuit diagram of a quasi-complementary amplifier, showing voltage waveforms in the
circuit.
4) Consider the series-fed class A amplifier in Fig. P2.1
a. The input signal results in a base current of 5 mA rms. Calculate the input and output power.
b. Calculate the input power dissipated if RB is changed to 1.5 kΩ.
c. What maximum output power can be delivered by the circuit if RB is changed to 1.5 kΩ?
d. If the circuit is biased at its center voltage and center collector operating point, what is the
input power for a maximum output power of 1.5 W?
5) For the class B power amplifier of Fig. P2.2
a. Calculate maximum input power (DC), maximum output power (AC), maximum circuit
efficiency, and maximum power dissipated by both transistors.
b. If the input voltage to the amplifier is 8-V rms, calculate input power (DC), output power (AC),
the circuit efficiency and the power dissipated by both power output transistors.

Fig.P2.1: VCC = 18V,

RB = 1.2k, RC = 16,
Ri = 1k, CB = 100F

Fig.P2.2:VCC =30V, RL= 8 Fig.P2.3: VCC =40V, CB = 100F,

RL= 8,
R1 = R2 = R3 = 100, Vi = 18V
RMS

6) For the power amplifier of Fig. P2.3, calculate input power (DC), output power (AC), the circuit
efficiency and the power dissipated by both power output transistors.
7) Calculate the harmonic distortion components for an output signal having fundamental amplitude
of 2.1 V, second harmonic amplitude of 0.3 V, third harmonic component of 0.1 V, and fourth
harmonic component of 0.05 V. Calculate the total harmonic distortion.
8) Calculate the second harmonic distortion for an output waveform having measured values of
VCEmin = 2.4 V, VCEQ = 10 V, and VCEmax = 20 V.
9) For distortion readings of D2 = 0.15, D3 = 0.01, and D4 = 0.05, with I1 = 3.3 A and RC = 4 Ω,
calculate the total harmonic distortion fundamental power component and total power.
10) Determine the maximum dissipation allowed for a 100-W silicon transistor (rated at 25°C) for a
derating factor of 0.6 W/°C at a case temperature of 150°C.
11) A 160-W silicon power transistor operated with a heat sink (SA = 1.5°C/W) has JC = 0.5°C/W
and a mounting insulation of CS = 0.8°C/W. What maximum power can be handled by the
transistor at an ambient temperature of 80°C? (The junction temperature should not exceed 200°C.)
12) What maximum power can a silicon transistor (TJmax = 200°C) dissipate into free air at an ambient
temperature of 80°C?