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A. True
B. False
Answer: Option B
Explanation:
Diamond is diamagnetic.
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B. Paper capacitor
C. Mica capacitor
B. False
Answer: Option B
Explanation:
Spontaneous polarization vanishes above ferro-electric Curie temperature.
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4. In paramagnetic materials
permanent magnetic dipoles exist but the interaction between neighbouring dipoles is
A.
negligible
permanent magnetic dipoles exist and the interaction between neighbouring dipoles is
C.
very strong
B. eni(μp + μn)
C. ni(μp + μn)
D. ni(μpμn)
Answer: Option B
Explanation:
For intrinsic semiconductor,
Conductivity = (Electron charge) x (Number of charge carriers) x (Sum of mobilities of holes and
electrons).
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7. The core of a coil has a length of 10 cm. The self inductance is 8 mH. If the core length is
doubled, all other quantities remaining the same, the self inductance will be
A. 32 mH
B. 16 mH
C. 8 mH
D. 4 mH
Answer: Option D
Explanation:
Inductance is inversely proportional to the core length.
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8. The minority carrier life time and diffusion constant in a semiconducting material are 100 μs and
100 cm2/s respectively. The diffusion length of carriers is
A. 0.1 cm
B. 0.01 cm
C. 0.0141 cm
D. 1 cm
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9. Assertion (A): Electronic and Ionic polarization in a polyatomic gas are independent of
temperature.
Reason (R): The orientation polarization is independent of temperature.
A. Both A and R are true and R is correct explanation of A
10. Two materials having temperature coefficients of 0.004 and 0.0004 respectively are joined in
series. The overall temperature coefficient is likely to be
A. 0.08
B. 0.04
C. 0.001
D. 0.0001
Answer: Option C
Explanation:
The overall temperature coefficient will be less than 0.004 and more than 0.0004.
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11. The number of valence electrons in pentavalent impurity is
A. 5
B. 4
C. 3
D. 1
Answer: Option A
Explanation:
Pentavalent means 5 valence electrons.
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12. If the diameter of a wire is doubled, its current carrying capacity becomes
A. one-fourth
B. half
C. twice
D. four times
Answer: Option D
Explanation:
Current carrying capacity depends on area of cross-section.
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13. The law J = σE, where J is current density, σ is electrical conductivity and E is field strength is
A. Ohm's law
B. Gauss law
C. Ampere's law
D. Biot-Savart law
Answer: Option A
Explanation:
It is another form of Ohm's law.
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14. Assertion (A): Silicon is less sensitive to changes in temperature than germanium.
Reason (R): Cut in voltage in silicon is less than that in germanium.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
B. diamagnetic
C. ferromagnetic
D. ferrimagnetic
Answer: Option B
Explanation:
Diamagnetic materials have no permanent magnetic diploes.
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16. A parallel plate capacitor has its length, width and separation doubled. It fringing effects are
neglected, to keep the capacitance same, the dielectric constant must be
A. halved
C. doubled
D. made 4 times
Answer: Option A
Explanation:
. When dimensions are changed, A become four times and d becomes twice.
Since ∈0 is constant, ∈r must be halved to keep C constant.
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17. Assertion (A): In imperfect capacitors, the current does not lead the applied ac voltage by 90°.
Reason (R): When subjected to ac fields, the dielectric constant can be expressed as ∈'r - j∈"r.
A. Both A and R are true and R is correct explanation of A
B. False
Answer: Option B
Explanation:
The state with l = 0 is called s state.
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19. If a sample of germanium and a sample of silicon have the same impurity density and are kept at
room temperature
A. both will have equal value of resistivity
20. When an electric field E is applied to solid and liquid insulating materials, the internal field
Ei acting at the location of atom is such that
A. Ei = E
B. Ei > E
C. Ei < E
B. Capacitance
C. Inductance
B. shield
C. dielectric
D. jacket
Answer: Option B
Explanation:
Braided material is used for shield.
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24. The hysteresis phenomenon in ferromagnetic materials exists at all temperatures.
A. True
B. False
Answer: Option B
Explanation:
Hysteresis phenomenon exists below ferromagnetic curie temperature.
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25. Assertion (A): Magnetic susceptibility of diamagnetic materials is much less than that of
paramagnetic materials.
Reason (R): For diamagnetic as well as paramagnetic materials, μr is nearly equal to 1.
A. Both A and R are true and R is correct explanation of A
26. The attraction between the nucleus and valence electron of copper atom is
A. zero
B. weak
C. strong
27. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier
concentration is doubled, then
A. the majority carrier density is doubled
B. the minority carrier density is doubled
B. False
Answer: Option B
Explanation:
Hysteresis phenomenon exists in dielectic materials.
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30. In metals the valence electron wave functions are strongly perturbed by the presence of
neighbouring atoms.
A. True
B. False
Answer: Option A
Explanation:
In a metal valence electrons are shared by all atoms.
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31. For a paramagnetic material, susceptiblity increases with increasing temperature.
A. True
B. False
Answer: Option B
Explanation:
Susceptibility ∝ .
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B. MCB
D. circuit breakers
Answer: Option C
Explanation:
Modem large size generators have hydrogen cooling.
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34. If e is the charge of an electron, R is the radius of its orbit and ω is the angular velocity of
electron, the magnetic dipole moment μm of the orbit is |μm| = eωR2.
A. True
B. False
Answer: Option B
Explanation:
1 μm 1 = 0.5 eωr2.
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35. If ∈r' and ∈r" are the real and imaginary parts of complex dielectric constant ∈r, and δ is the loss
angle. Then
A.
B.
C. tan δ = ∈'∈"
D. tan δ = 1 - ∈'
Answer: Option B
Explanation:
If ∈r" = 0, δ = 0.
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36. Assertion (A): At a temperature of 1000 K, thermionic emission current is about 0.1 A/cm2 of
surface.
Reason (R): Thermionic emission current is given by Ith = SA0 T2 e-Ew/kT.
A. Both A and R are true and R is correct explanation of A
B. electrons
C. ions
D. have μp = 0
Answer: Option B
Explanation:
Ferroelectric materials have permanent polarization.
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41. If n denotes principal quantum number, the angular quantum number l = 0, 1... (n - 1).
A. True
B. False
Answer: Option A
Explanation:
Angular quantum number determines the angular momentum of electron.
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42. Assertion (A): In a perfect capacitor, the current density is given by ω ∈0E0∈'rcos(ωt + 90°),
where ∈r' is real part of dielectric constant.
Reason (R): In a perfect capacitor, dielectric losses are zero.
A. Both A and R are true and R is correct explanation of A
43.
Assertion (A): For a solenoid having N turns, .
Reason (R): For all magnetic materials, B increases linearly with I.
A. Both A and R are true and R is correct explanation of A
45. Assertion (A): If E is available energy state eV and EF is Fermi level, then probability of energy
state E being occupied = 0.5.
Reason (R): .
A. Both A and R are true and R is correct explanation of A
C. the magnetic lines of force will bend away from the piece
47. The apparent capacitance at a high angular frequency ω of an air cored capacitor having
capacitance C and inductance L is given by
A.
B.
C.
D.
Answer: Option B
Explanation:
The combination can be represented as L and C in series.
Therefore, .
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B. 4
C. 3
D. 1
Answer: Option A
Explanation:
Donor impurity has 5 valence electrons (while silicon has 4 valence electrons).
Hence donor impurity can donate electrons.
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49. In a true valence crystal, the bonding between the atoms is accomplished by the sharing of
valence electrons.
A. True
B. False
Answer: Option A
Explanation:
Sharing of valence electons is a characteristic of true valence crystal.
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B. 1, 2, 4, 6
C. 3, 4, 5, 6
D. 2, 4, 5
Answer: Option D
Explanation:
Donor impurities have five valence electrons.