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RURD620CC, RURD620CCS

Data Sheet January 2000 File Number 4075.2

6A, 200V Ultrafast Dual Diodes Features


The RURD620CC and RURD620CCS are ultrafast dual • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
[ /Title diodes with soft recovery characteristics (trr < 25ns). They
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
(RUR have low forward voltage drop and are silicon nitride
D620C passivated ion-implanted epitaxial planar construction. • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
C, These devices are intended for use as • Avalanche Energy Rated
RURD freewheeling/clamping diodes and rectifiers in a variety of • Planar Construction
620CC switching power supplies and other power switching
S) applications. Their low stored charge and ultrafast soft Applications
recovery minimize ringing and electrical noise in many power
/Sub- switching circuits, thus reducing power loss in the switching • Switching Power Supplies
ject transistors. • Power Switching Circuits
(6A,
Formerly developmental type TA49037. • General Purpose
200V
Ultrafa Ordering Information Packaging
st Dual JEDEC TO-251AA
PART NUMBER PACKAGE BRAND
Diodes
RURD620CC TO-251AA UR620C
) ANODE 1
CATHODE
/Autho RURD620CCS TO-252AA UR620C ANODE 2

r () NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-252 variant in tape and reel, i.e., CATHODE
/Key- RURD620CCS9A. (FLANGE)
words
(6A, Symbol
200V JEDEC TO-252AA
K
Ultrafa
st Dual CATHODE
(FLANGE)
Diodes ANODE 2
ANODE 1
, Inter- A1 A2
sil
Corpo-
ration,
Absolute Maximum Ratings (Per Leg) TC = 25oC Unless Otherwise Specified
semi-
RURD620CC
con- RURD620CCS UNITS
ductor, Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 200 V
Ava- Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 200 V
lanche DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR 200 V
Energy Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 6 A
Rated, TC = 160oC
Switch Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 12 A
Square Wave, 20kHz
ing
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 60 A
Power Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 45 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ -65 to 175 oC

©2001 Fairchild Semiconductor Corporation RURD620CC, RURD620CCS Rev. A


RURD620CC, RURD620CCS

Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS

VF IF = 6A - - 1.0 V

IF = 6A, TC = 150oC - - 0.83 V

IR VR = 200V - - 100 µA

VR = 200V, TC = 150oC - - 500 µA

trr IF = 1A, dIF/dt = 200A/µs - - 25 ns

IF = 6A, dIF/dt = 200A/µs - - 30 ns

ta IF = 6A, dIF/dt = 200A/µs - 13 - ns

tb IF = 6A, dIF/dt = 200A/µs - 6.5 - ns

QRR IF = 6A, dIF/dt = 200A/µs - 20 - nC

CJ VR = 10V, IF = 0A - 30 - pf

RθJC - - 3.5 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.

Typical Performance Curves

30 100

175oC
IR , REVERSE CURRENT (µA)
IF , FORWARD CURRENT (A)

10
10
100oC
1

0.1

175oC 100oC 25oC


0.01
1 25oC

0.5 0.001
0 0.25 0.5 0.75 1 1.25 1.5 0 50 100 150 200
VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

©2001 Fairchild Semiconductor Corporation RURD620CC, RURD620CCS Rev. A


RURD620CC, RURD620CCS

Typical Performance Curves (Continued)

20 40

trr TC = 100oC, dIF/dt = 200A/µs

16 32

t, RECOVERY TIMES (ns)


t, RECOVERY TIMES (ns)

trr

ta
12 24
ta

8 16
tb
tb
4 8

TC = 25oC, dIF/dt = 200A/µs


0 0
0.5 1 6 0.5 1 6
I F , FORWARD CURRENT (A) I F, FORWARD CURRENT (A)

FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT

60
IF(AV), AVERAGE FORWARD CURRENT (A)
6
TC = 175oC, dIF/dt = 200A/µs
50 5
trr
t, RECOVERY TIMES (ns)

DC
40 4
ta SQUARE WAVE
30 3

20 2

tb
10 1

0 0
0.5 1 6 150 155 160 165 170 175
I F, FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)

FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE

50
CJ , JUNCTION CAPACITANCE (pF)

40

30

20

10

0
0 50 100 150 200
VR , REVERSE VOLTAGE (V)

FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE

©2001 Fairchild Semiconductor Corporation RURD620CC, RURD620CCS Rev. A


RURD620CC, RURD620CCS

Test Circuits and Waveforms

VGE AMPLITUDE AND


RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF

DUT CURRENT dIF trr


RG SENSE IF
+ dt ta tb
VGE VDD 0
t1 IGBT -
0.25 IRM
t2
IRM

FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS

I = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
VAVL
Q1 = IGBT (BVCES > DUT VR(AVL))
L R

CURRENT +
VDD IL IL
SENSE
Q1 I V
VDD
DUT -
t0 t1 t2 t

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS

©2001 Fairchild Semiconductor Corporation RURD620CC, RURD620CCS Rev. A


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  PACMAN™ SuperSOT™-3
Bottomless™ FASTr™ POP™ SuperSOT™-6
CoolFET™ GlobalOptoisolator™ PowerTrench  SuperSOT™-8
CROSSVOLT™ GTO™ QFET™ SyncFET™
DenseTrench™ HiSeC™ QS™ TinyLogic™
DOME™ ISOPLANAR™ QT Optoelectronics™ UHC™
EcoSPARK™ LittleFET™ Quiet Series™ UltraFET™
E2CMOSTM MicroFET™ SILENT SWITCHER  VCX™
EnSignaTM MICROWIRE™ SMART START™
FACT™ OPTOLOGIC™ Star* Power™
FACT Quiet Series™ OPTOPLANAR™ Stealth™
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H

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