Chapter 01

Comparison of
MOST and Bipolar transistor

models
Willy Sansen
KULeuven, ESAT-MICAS
Leuven, Belgium
willy.sansen@esat.kuleuven.be
Willy Sansen 10-05 011

Table of contents
• Models of MOST transistors

• Models of Bipolar transistors
• Comparison of MOSTs and Bipolars
Ref.: W. Sansen : Analog Design Essentials, Springer 2006

From Bipolar to MOST transistors
100 GHz GaAs

10~40 GHz 10~40 GHz
GaAs
BICMOS
2~10 GHz
BIP
1~2 GHz 1~2 GHz
BICMOS
200 MHz CMOS
CMOS
1994 2000
Ref.Toshiba

The SIA roadmap
Year Lmin Bits/chip Trans/chip Clock Wiring

Pm Gb/chip millions/chip MHz
1995 0.35 0.064 4 300 4-5

1998 0.25 0.256 7 450 5
2001 0.18 1 13 600 5-6
2004 0.13 4 25 800 6
2007 0.09 16 50 1000 6-7
2010 0.065 64 90 1100 7-8
2003
Semiconductor Industry Association

The law of Moore
10
L-Micron
Year
.1
1980 1985 1990 1995 2000 2005

ISSCC 2005 paper distribution
40
Analog/RF
35
30
25
Digital
20
15
10
0
350 250 180 130 90 65 nm Lmin

Price MPW silicon for different L (nm)
10000
Cost MPW $/sq.mm
1000
100
1000 nm 100

MOST layout
B S G D S G+ D+
p+ n+ n+ n+ n+
p
p
WM
LM

MOST layout : Cox and CD
G+
S D+
tox Cox Hsi
CD =
tsi
n+ n+
CD
Hox
Cox =
tox
p tsi
B CD
=n-1
Cox
MOST layout : Cox and CD values
Hsi = 1 pF/cm
Hsi 2Hsi(I - VBD)
CD = tsi = Hox = 0.34 pF/cm
tsi qNB
I § 0.6 V
q = 1.6 10-19 C
Example : L = 0.35 Pm; W/L = 8
NB § 4 1017 cm-3
VBD = -3.3 V : tsi = 0.1 Pm
CD § 10 -7 F/cm2
Lmin
tox = tox = 7 nm
50 CD
Cox § 5 10 -7 F/cm2 = n - 1 § 0.2
Cox
N-well CMOS technology
Gate oxyde
Polysilicon gate

MOST IDS versus VGS and VDS
VDS = ct
IDS IDS VGS
linear
saturation
VGS
VGS
VGS
0 VT VGS 0 VDS
Saturation because high VDS
Table of contents
• MOST as a resistor
• MOST as an amplifier in strong inversion
• Transition weak inversion-strong inversion
• Transition strong inversion-velocity saturation
• Capacitances and fT
• Comparison of MOSTs & Bipolar transistors

MOST IDS versus VDS
IDS
linear
VDS > VGS-VT
saturation
Linear resistor VGS-VT
Ron = n
1
E(VGS-VT) 0 VGS-VT VDS
W
E = KP L
MOST parameters E , KP , Cox , ...
KPn § 300 PA/V2

W
E = KP L Cox § 5 10 -7 F/cm2
KP = P Cox Hox = 0.34 pF/cm

Hox Hsi = 1 pF/cm
Cox =
tox tox = 7 nm
Lmin Lmin = 0.35 Pm
tox =
50 P p § 250 cm2/Vs
P n § 600 cm2/Vs

Example : Analog switch on CL
VDD We want to switch 0.6 V to a

load capacitance CL of 4 pF.
We want to do this fast,
vIN vOUT
with time constant 0.5 ns.
CL Supply voltage VDD = 2.5 V
VT = 0.5 V
Use standard 0.35 Pm CMOS.
Choose
minimum channel length and
find an average VGS !

Example : Analog switch on RL
VDD We want to switch 0.6 V to a

load resistor RL of 5 k:.
vIN vOUT W/L = 8
RL Supply voltage VDD = 2.5 V
0.35 Pm CMOS: VT = 0.5 V
vOUT ? Ron ?
Choose
Ron minimum channel length !
vIN vOUT
RL

Body effect - Parasitic JFET
VT = VT0 + J [ |2)F| + VBS - |2)F| ]
J CD
n= = 1+ |2)F| § 0.6 V
|2)F| + VBS Cox
n § 1.2 … 1.5
J § 0.5 …0.8 V1/2

Reverse vBS increases |VT| and decreases |iDS | !!!
n = 1/N subthreshold gate coupling coeff. Tsividis

Ex. : Analog switch with nonzero VBS
VDD Switch 0.6 V to a

load capacitance CL of 4 pF
vIN vOUT or a load resistor RL of 5 k:.
CL W/L = 8 (Ron = 125 : @ VBS = 0)
Supply voltage VDD = 2.5 V
0.35 Pm CMOS: VT = 0.5 V
VDD vOUT ? for J = 0.5 V-1
vIN vOUT
RL Start with VBS = 0.

Table of contents

MOST IDS versus VGS
IDS vs IDS ~ (VGS-VT)
si IDS = K’n W (VGS-VT)2

wi L
VGS
log IDS K’ =
KP
2n
n= ??
vs
K’n § 100 PA/V2
K’p § 40 PA/V2
VGS
Slope q/nkT VGS IDS ~ exp nkT/q

MOST small-signal model : gm & rDS
D iDS G D
+
G
+ vGS rDS
vGS gmvGS
- -
S=B S diDS S
gm =
dvGS
W W 2 IDS
gm = 2K’ n L (VGS-VT) = 2 K’ n IDS =
L VGS-VT

The transconductance gm
Is gm ~ IDS
or ~ IDS ?
MOST small-signal model : rDS
IDS
linear VEL
rDS = ro =
IDS
saturation
1
O=
VEL
VEn = 4 V/PmL
0 VGS-VT = VDSsat VDS L = 1 Pm

IDS = 100 PA
W
’
IDS = K n (VGS-VT) 2 (1 + OVDS)
L ro = 40 k:

MOST single-transistor gain Av
IB 2 VE L
Av = gmrDS =
+ VGS-VT
vout
vin
-
Av § 100
If VEL § 10 V
and VGS-VT § 0.2 V

Design for high gain :
High gain High speed
VGS-VT Low (0.2 V)
L High
VGS-VT sets the ratio gm/IDS !

Example: single-transistor amplifier
We want to realize a three-stage amplifier

with a total gain of 10.000.
We use three single-transistor stages in series.
What minimum lengths do we have to use in
an advanced 65 nm CMOS technology
with VE = 4 V/Pm ?
Choose
VGS-VT = 0.2 V !

pMOST small-signal model
D iDS G D
+
G
+ vGS rDS
vGS gmvGS
- -
S=B S S
S=B
+ S S
vGS +
- vGS rDS
G gmvGS
D iDS -
G D
MOST small-signal model: gm & gmb
G D B
iDS + +
+ + vGS rDS vBS
vGS vBS
- - - -
S gmvGS gmbvBS
diDS diDS
gm = gmb =
dvGS dvBS
gmb CD
= =n-1
gm Cox

Table of contents

IDS & gm versus VGS : weak inversion
IDS vs wi : weak inversion

si VGS
W
wi VGS IDSwi = ID0 exp nkT/q
L
gm vs
Subthreshold slope :
nkT/q ln(10)
si
IDSwi
wi gmwi =
VGS nkT/q

Transconductance gm versus VGS
gm
mS
gmsat
6 VT
4 si vs
2
wi
0.2 0.5 VGS-VT
0
0 0.5 1 1.5 V VGS

Transition voltage VGSt between wi & si
VGS
W IDS = K’n W (VGS-VT) 2
IDSwi = ID0 exp nkT/q
L L
IDSwi 2 IDS
gmwi = gm =
nkT/q VGS-VT
gmwi 1 gm 2
= =
IDSwi nkT/q IDS VGS-VT
kT
(VGSt-VT)t = 2n
q
Transition Voltage VGSt for different L
kT W kT 2
(VGSt-VT)t = 2n IDSt § K’ n L
(2n )
q q
Is independent of channel length L

Is still true in … years !
kT W
(VGSt-VT)t = 2n § 70 mV IDSt § 2 PA for = 10
q L
for nMOST

Transition wi - si
log IDS si
wi
IDSt ~ (VGS-VT) 2
VGS
~ nkT/q
VGS
VT VT + 70mV

Ratio gm/IDS at the transition wi - si
gm
1
IDS kT/q
4x
1
20 gm 2
nkT/q =
IDS VGS-VT
10
IDS
0
0.01 0.1 1 10 100
IDSt

EKV model for smooth wi-si transition
W KP
IDS = K’ VGSTt2 [ ln (1 + ev ) ]2 VGST = VGS-VT K’ =
L 2n
VGST kT
v= VGSTt = (VGS-VT) t = 2n
VGSTt q
§ 70 mV
Small v : ln (1 + ev )§ ev
W W VGS-VT
IDS = K’ VGSTt2 e2v = K’ VGSTt2 exp ( )
L L n kT/q
IDSt
Large v : ln (1 + ev )§v
Enz, AICSP ‘95,
W W 83-114
IDS = K’ VGSTt2 v2 = K’ (VGS-VT) 2 Cunha, JSSC Oct.98
L L 1510-1519

Transition current IDSt between wi & si
W
IDSt = IDS = K’ VGSTt2 IDSt = 2 PA for W/L = 10
L
V=1
i=1 IDS
i= = [ ln (1 + ev ) ]2 inversion
IDSt coefficient
v = ln ( e i - 1)
VGS-VT = VGSTt ln ( e i - 1)
kT
VGSTt = 2n § 70 mV
q

Relation VGS-VT and inversion coefficient i
VGS-VT (mV)
800
VGS-VT =
700 weak inv. moderate inv. strong inv.
600 VGSTt ln ( e i - 1)
500 mV
500
400
kT
VGSTt = 2n
300
q
200 mV
200
100
80 mV
0
0 mV
-100
0.5 2 8 40
-200
IDS
0.01 0.1 1 10 100 i i=
IDSt
Transconductance gm between wi & si
IDS
i= = [ ln (1 + ev ) ]2 gm § ….
IDSt
gm nkT 1-e- i 1
GM = = Large i : GM =
IDS q i i
i
Small i : GM = 1 -
2
Alternative approximation :
1
GM = Large i : GM = 1
1+ 0.5 i + i
i
i
Small i : GM = 1 -
4
GM versus inversion coefficient i
GM
1.0 gm nkT
GM =
0.9 sqrt IDS q
0.8
exp GM =
0.7
1-e- i
0.6
0.5
i
0.4
0.3 1
0.2 1+ 0.5 i + i
0.1
8 IDS
0.0 i=
0.01 0.1 1 10 100 i IDSt

Table of contents

IDS & gm vs VGS : velocity saturation
IDS vs vs : velocity saturation

si IDSvs = WCoxvsat (VGS-VT)
wi VGS vsat § 107 cm/s
gm vs
gmsat = WCoxvsat
si
wi is absolute max. !
VGS

The saturation region and velocity saturation
IDS saturation
linear
(VGS-VT )vs
Saturation region
Square-law region
(VGS-VT )t
0 VGS-VT = VDSsat VDS

Transconductance gm versus VGS
gm gmsat = WCoxvsat
mS vsat = 107 cm/s
gmsat
6 VT
4 si vs
2
wi
0.2 0.5 VGS-VT
0
0 0.5 1 1.5 V VGS

Velocity saturation : vsat & T
[large VGS]
K’n W (VGS-VT) 2
L K’n W
IDS = § (VGS-VT)
1 + T (VGS-VT) T L
T
1 + (VGS-VT) K’n W
W 2
gmsat § 2K n (VGS-VT) 2
’ §
L [1 + T (VGS-VT)] 2 T L
= WCoxvsat
P 1 1
TL= =
2n vsat Ec Ec is the vertical critical field !
T L § 0.2 Pm/V : For L = 0.13 Pm T § 1.6 V-1

Velocity saturation : T& RS & vsat
K’n W (VGS-VT) 2
IDS = L
1 + T (VGS-VT) [large VGS]
K’n W gm 1
gmsat § gmRs = §
T L 1 + gm RS RS
T P 1 1
RS = RS § §
K’n W/L 2n W K’nvsat W Coxvsat

Transition Voltage VGSTvs between si and vs
K’n W (VGS-VT) 2
L IDSsat = WCoxvsat (VGS-VT)
IDS =
1 + T (VGS-VT)
K’n W
gmsat = WCoxvsat §
T L
1 vsat Is proportional to
(VGS-VT)vs = § 2nL
T P channel length L !!!
§ 5 L § 0.62 V if L = 0.13 Pm
Transition Current IDSvs between si and vs
2n vsat vsat2
IDSvs § K’ WL ( )2 § 100 n Hox W
P P
IDSvs PCox
§ 10 A/cm K’ =
2n
W
Hox L
Cox = tox =
tox 50
W = 2.6 Pm & L = 0.13 Pm : vsat = 107 cm/s

IDSvs § 2.6 mA n = 1.4
P= 500 cm2/Vs

Transconductance gm between si and vs
gmsat = W Cox vsat gmsat § 17 10-5 W/L S/cm
W
gmK’ = 2K’ (VGS-VT) gmK’ § 1.2 10-9 VGST W/L2 S/cm
L
VGST
1 1 1 W 17 10-5
= + gm § L
gm gmK’ gmsat L 1 + 2.8 104 L / VGST in cm
If VGST = 0.2 V, vsat takes over for L < 65 nm (If 0.5 V for L < 0.15 Pm)

Now in velocity saturation ?
VGS-VT § 0.2 V
gm
(0.5 V)
W
mS/Pm
gm 2K’
= (VGS-VT)
10 W L
vsat gm 0.06 VGST
§
W L2 in Pm
1
K’ gm
= Cox vsat
W
0.1 0.2 V 0.5 V
10 nm 0.1 Pm L 1 gm 0.17
§
W L
in Pm
Range of VGS-VT values for si vs time
10
VGSTvs
VGSTvs/3
VGS-VT (Volts) v.sat
3VGSTwi
si VGSTwi
clear si
.1 si
wi
Year
.01
1988 1990 1992 1994 1996 1998 2000 2002 2004 2006 2008

MOST operating region in si
gm VGS-VT § 0.5 V
mS VGS-VT § 0.2 V
gmsat
6
4 si vs
VT
2 wi
0.2 0.5 VGS-VT
0
0 0.5 1 1.5 V VGS

gm vs VGS for different L (same tox)
Exercise :
gm gm
L>>Lmin
Lmin § 50 tox
L>>Lmin
Lmin § 50 tox
VGS-VT VGS-VT
W
W = ct = ct
L
gm vs VGS for different tox (§ Lmin/50)
Exercise :
gm gm
Lmin small
Lmin small
Lmin large Lmin large
VGS-VT VGS-VT
W
W = ct = ct
L
Table : MOST IDS , gm & gm/IDS
Summary :
Ref.: Laker, Sansen : Design of analog …, MacGrawHill 1994; Table 1-4

Gate current
For 0.1 Pm CMOS :

tox § 2 nm
JG § 4 10-2 A/cm2
For 10 x 0.5 Pm
IG § 2 nA
JG (A/cm2)
L
§ 4.5 105 exp( - )
6.5
L in nm
Ref. Koh, Tr ED 2001, 259-

Annema, JSSC Jan.05, 135.
Table of contents

MOST capacitances

MOST capacitances CGS & CGD
rG CGD CDB
G D B
+ +
CGS vGS vBS CSB
- rDS
-
gmvGS gmbvBS
S
2
CGS § 3 WLCox § 2W fF/Pm for Lmin
Hox
LminCox § Lmin § 50 Hox § 2 fF/Pm
tox
CGD = WCgdo
MOST fT where iDS = iGS
iGS
G D
iGS = vGS CGS s
+
CGS iDS0
vGS
- iDS = gm vGS
gmvGS rDS
S
2 ’ W PCox
CGS = 3 WLCox gm = 2K L (VGS-VT) K’ =
2n
gm 1 3 P vsat
fT = = (VGS-VT) or §
2S CGS 2S 2n L2
2S L
fmax § fT / 8S rGCGD
Design for high speed :
High gain High speed
VGS-VT Low (0.2 V) High (0.5 V)
L High Low
VGS-VT sets the ratio gm/IDS !

Maximum fT values versus channel length L
100
f (GHz) fm
fT P
fTsat fT = (VGS-VT)
2SL2
0.2 … 1 V
vsat
fTsat =
10 2SL
fT
VGS-VT = 0.2 0.5 1V fm =
1 + DBD
CBD
DBD §
1 Cox
.1 1 L (micron) 10
Processors
fT model in si and velocity saturation
gm CGS = kW k = 2 fF/Pm = 2 10 -11 F/cm

fT =
2S CGS
W 17 10-5
gm =
L 1 + 2.8 104 L / VGST L in cm
1 13.5
fT = GHz
L 1 + 2.8 L / VGST
L in Pm
If VGST = 0.2 V, vsat takes over for L < 65 nm

If VGST = 0.5 V for L < 0.15 Pm

fT model in si and weak inversion
gm gm nkT 1-e- i
fT = GM = =
2S CGS IDS q i
IDS 1-e- i
gm = but IDS = i IDSt
nkT/q i
IDSt
gm = i (1 - e - i)
nkT/q
fT IDSt K’ VGSTt2 W/L

= i (1 - e - i)
fTH = =
fTH 2S CGS nkT/q 2S WL Cox nkT/q
= 2 P kT/q
4 K’ nkT/q
§ i for small i ! =
2S Cox L2 2S L2
fT versus inversion coefficient i
fT
=
1 fTH
GM
fT
i (1 - e - i)
fTH
0.5 GM =
1-e- i
0 IDS
0.01 0.1 1 10 100 i=
IDSt

Exercise: MOST fT or not fT ? all L= Lmin
1 P K’IDS IDS
fT = (VGS-VT) = =
2S L2 S Cox WL3 SWLCox(VGS-VT)
IDS VGST W=ct VGST

fT fT fT
IDS VGST=ct W VGST=ct
W=ct > IDS IDS =ct VGST

W= > IDS =ct W VGST
VGST = VGS-VT W IDS

MOST capacitances CSB & CDB
rG CGD CDB
G D B
+ +
CGS vGS vBS CSB
- rDS
-
gmvGS gmbvBS
S
CjSB0
CSB = IjS § IjD § 0.5 … 0.7 V
1 + VSB/IjS
CjDB0
CDB =
1 + VDB/IjD

RF MOST model
CG /5
CGD
G D
RG /3 +
vGS rDS
CGS -
gmvGS
S
CG = CGS + CGD
Ref. Sansen, etal, ACD, XDSL,
Ref. Tin, Tr. CAD, April 1998, 372 RFMOS models, Kluwer 1999

Single-page MOST model
IDS = K’ W (V -V ) 2 VGS-VT § 0.2 V K’n § 100 PA/V2

n GS T K’p § 40 PA/V2
L
W W 2 IDS
L VGS-VT
VEL
rDS = ro = VEn § 5 V/PmL VEp § 8 V/PmL
IDS
vsat = 107 cm/s
3 P
1 vsat
fT = 2
(VGS-VT) or now §
2S 2n L 2S L
Growing number of parameters !
BSIM4 : http://www-device.eecs.berkeley.edu/bsim/bsim_ent.html
Model 11 : http://www.semiconductors.philips.com/Philips_Models/mos_models
EKV : http://legwww.epfl.ch/ekv/model.html /model11/index.html

Benchmark tests
1. Weak inversion transition for IDS and gm/IDS ratio

2. Velocity saturation transition for IDS and gm/IDS ratio
3. Output conductance around VDSsat
4. Continuity of currents and caps around zero VDS

5. Thermal and 1/f noise
6. High frequency input impedance (s11) and
transimpedance (s21)

Table of contents


Bipolar transistors
WB WB
Lateral PNP transistor

NPN transistor

Bipolar transistor ICE versus VBE
C iCE
iBE iCE
B
+ 0.7 V : not more
vBE
not less
-
E vBE
0 0.5 1V
VBE ICE
kT/q IBE =
ICE = IS exp E
is leakage current
IS § 10 -15 A kT/q = 26 mV at 300 K
E § 10 … 1000

Bipolar transistor small-signal model : gm & ro
rB
C iCE B’ B C
+
B vBE
+ rS ro
vBE gmvBE
-
-
E E E
diCE ICE gm 1
gm = = = § 40 V-1
dvBE kT/q ICE kT/q
dvBE dvBE E VE
VEn § 20 V
rS = = E = ro =
diBE diCE gm ICE VEp § 10 V

Bipolar transistor capacitance CS
rB CP C
B’ B
+
CCS
rS CS - vBE ro
gmvBE
E
S
CjBE0
CS = CjBE + CD CjBE = IjE § 0.7 V
1 + VBE/IjE
CD is the diffusion capacitance

Diffusion capacitance CD
rB B
CP C
B’
+
CCS
rS CS - vBE ro
gmvBE
E S
QB diCE ICE
CD = = WF = WFgm = WF
vBE dvBE kT/q
WB2 WB
Base transit time WF = or now §
2Dn vsat
§ 10 … 200 ps
Bipolar transistor capacitances CP& CCS
rB B
CP C
B’
+
CCS
rS CS - vBE ro
gmvBE
E
S
CjBC0
CP = CjBC CjBC =
1 + VBC/IjC
CjCS0
CCS = CjCS CjCS = IjC § IjS § 0.5 V
1 + VCS/IjS

Bipolar transistor fT
rB B
CP C
B’
+
CCS
rS CS - vBE ro
gmvBE
E=S
gm 1 1 vsat
fT = = or §
2S CS 2S 2S WB
WF + CjBE+CP
gm
For a current drive ! fmax § fT / 8S rBCP

Bipolar transistor fT versus ICE
1
fT
2SWF 1 1
fT =
2S
WF + CjBE+CP
gm
ICE
1
2SfT 1 kT 1
slope
= WF + (CjBE + CP)
2SfT q ICE
WF
1/ICE slope

Single-page Bipolar transistor model
VBE
kT/q
ICE = IS exp IS § 10 -15 A kT/q = 26 mV at 300 K
ICE VE
gm = ro = VEn § 20 V VEp § 10 V
kT/q ICE
1 1 vsat
fT = or §
2S Cje+Cjc 2S WB
WF +
gm

Table of contents


Comparison MOST - Bipolar
E?
CD
n=1+
Cox
4… 6 x
Ref. Laker Sansen Table 2-8

Comparison MOST - Bipolar : minimum VDS
IDS
VDSsat § VGS-VT
IDS
VGS-VT §
K’n W
L
VCEsat § kT/q’s
0 VCEsat VDSsat VDS
Ref. Laker - Sansen Table 2-8

Comparison MOST - Bipolar : gm/IDS ratio
gm
1
IDS kT/q
4 X
1
V-1 20
nkT/q
10
IDS ICE
0
0.01 0.1 1 10 100 i

Design plan for gm :
IDS = K’n W (VGS-VT) 2

L
W W 2 IDS
L VGS-VT
4 variables with 2 equations >> 2 free variables
Choose VGS-VT and L !

Comparison MOST - Bipolar
dvi2
vsat § 107 cm/s
Ref. Laker Sansen Table 2-8

Table of contents

Ref.: W. Sansen : Analog Design Essentials, Springer 2006

Reference books on Transistor models
T. Fjeldly, T. Ytterdal, M. Shur, “Introduction to Device Modeling and
Circuit Simulation”, Wiley 1998.
D. Foty, “MOSFET Modeling with SPICE, Prentice Hall
K. Laker, W.Sansen, "Design of Analog Integrated Circuits
andSystems", MacGrawHill. NY., Febr.1994.
A. Sedra, K.Smith, "Microelectronic Circuits", CBS College
Publishing, 2004.
Y. Taur, T. Ning, “Fundamentals of Modern VLSI Devices”
Cambridge Univ. Press, 1998.
Y. Tsividis, “Operation and modeling of the MOS transistor”,
McGraw-Hill, 2004.
A. Vladimirescu “The SPICE book”, Wiley, 1994

References on Analog Design
P.Allen, D.Holberg, "CMOS Analog Circuit Design", Holt, Rinehart and Winston. 1987,
Oxford Press 2002
P.Gray, P.Hurst, S. Lewis, R.Meyer, "Analysis and Design of Analog Integrated
Circuits", Wiley, 1977/84/93/01
R.Gregorian, G.Temes, "Analog MOS Int. Circuits for Signal Processing", Wiley, 1986.
Huijsing, Van de Plassche, Sansen, "Analog Circuit Design", Kluwer Ac.Publ.
1993/4/5….
D.Johns, K.Martin, "Analog integrated circuit design", Wiley 1997.
K.Laker, W.Sansen, "Design of Analog Integrated Circuits and Systems",
McGraw Hill. NY., Febr.1994.
H.W.Ott, "Noise reduction techniques in Electronic Systems", Wiley, 1988.
B. Razavi, “Design of analog CMOS integrated circuits”, McGraw Hill. NY., 2000.
A.Sedra, K.Smith, "Microelectronic Circuits", CBS College Publishing, 1987.

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Comparison of

MOST and Bipolar transistor

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• Models of MOST transistors

Ref.: W. Sansen : Analog Design Essentials, Springer 2006

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100 GHz GaAs

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Year Lmin Bits/chip Trans/chip Clock Wiring

1995 0.35 0.064 4 300 4-5

Semiconductor Industry Association

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Cost MPW $/sq.mm

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KPn § 300 PA/V2

KP = P Cox Hox = 0.34 pF/cm

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VDD We want to switch 0.6 V to a

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VDD We want to switch 0.6 V to a

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VT = VT0 + J [ |2)F| + VBS - |2)F| ]

J § 0.5 …0.8 V1/2

n = 1/N subthreshold gate coupling coeff. Tsividis

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VDD Switch 0.6 V to a

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IDS vs IDS ~ (VGS-VT)

si IDS = K’n W (VGS-VT)2

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0 VGS-VT = VDSsat VDS L = 1 Pm

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High gain High speed

VGS-VT Low (0.2 V)

VGS-VT sets the ratio gm/IDS !

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We want to realize a three-stage amplifier

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IDS vs wi : weak inversion

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Is independent of channel length L

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