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P-Type Modulation Doped Ingan/Gan Dot-In-A-Wire White-Light-Emitting Diodes Monolithically Grown On Si
P-Type Modulation Doped Ingan/Gan Dot-In-A-Wire White-Light-Emitting Diodes Monolithically Grown On Si
pubs.acs.org/NanoLett
r 2011 American Chemical Society 1919 dx.doi.org/10.1021/nl104536x | Nano Lett. 2011, 11, 1919–1924
Nano Letters LETTER
as high as 640 A/cm2, shown in the inset of Figure 7. The absence (11) Kim, H.; Cho, Y.; Lee, H.; Kim, S.; Ryu, S.; Kim, D.; Kang, T.;
of efficiency droop at high injection levels is attributed to the Chung, K. Nano Lett. 2004, 4, 1059.
superior carrier confinement provided by the quantum dot (12) Kikuchi, A.; Kawai, M.; Tada, M.; Kishino, K. Jpn. J. Appl. Phys.,
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and reduced carrier leakage, due to the p-type modulation (14) Zhong, Z.; Qian, F.; Wang, D.; Lieber, C. Nano Lett. 2003, 3, 343.
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In summary, we have developed catalyst-free InGaN/GaN S. C.; Chhajed, S.; Kim, J. K.; Schubert, E. F. Appl. Phys. Lett. 2009, 94,
dot-in-a-wire nanoscale heterostructures on Si(111) substrates, 141111.
with the quantum dots aligned near-perfectly at the center of the (16) Gradjean, N.; Ilegems, M. Proc. IEEE 2007, 95, 1853.
nanowires, due to the strain-induced self-organization. Their (17) Pan, A.; Liu, R.; Sun, M.; Ning, C.-Z. ACS Nano 2010, 4, 671.
structural and optical properties can be controlled by varying the (18) Zhang, X. M.; Lu, M. Y.; Zhang, Y.; Chen, L. J.; Wang, Z. L. Adv.
growth conditions in a single epitaxial step. They also provide Mater. 2009, 21, 2767.
unprecedented design flexibility and scaling capability for light- (19) Xu, S.; Xu, C.; Liu, Y.; Hu, Y. F.; Yang, R. S.; Yang, Q.; Ryou,
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Mater. 2010, 22, 4749.
the device active region using p-type modulation doping, we have (20) Lee, C. H.; Yoo, J.; Hong, Y. J.; Cho, J.; Kim, Y. J.; Jeon, S. R.;
demonstrated the most efficient phosphor-free white light LEDs Baek, J. H.; Yi, G. C. Appl. Phys. Lett. 2009, 94, 213101.
ever reported, which exhibit an internal quantum efficiency of (21) Guo, W.; Zhang, M.; Banerjee, A.; Bhattacharya, P. Nano Lett.
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The p-doped dot-in-a-wire LEDs also show many desired proper- (22) Lin, H. W.; Lu, Y. J.; Chen, H. Y.; Lee, H. M.; Gwo, S. Appl.
ties, including highly stable white light emission, nearly zero Phys. Lett. 2010, 97, 073101.
efficiency droop at injection current densities up to ∼640 A/cm2, (23) Chen, L. Y.; Huang, Y. Y.; Chang, C. H.; Sun, Y. H.; Cheng,
and relatively high color rendering properties, that are ideally Y. W.; Ke, M. Y.; Chen, C. P.; Huang, J. J. Opt. Exp. 2010, 18, 7664.
suited for future smart lighting applications. This work constitutes (24) Van de Walle, C. G.; Segev, D. J. Appl. Phys. 2007, 101, 081704.
significant progress for achieving low-cost, high-performance (25) Bertelli, M.; Loptien, P.; Wenderoth, M.; Rizzi, A.; Ulbrich,
R. G.; Righi, M. C.; Ferretti, A.; Martin-Samos, L.; Bertoni, C. M.;
phosphor-free white LEDs utilizing nanowire heterostructures.
Catellani, A. Phys. Rev. B 2009, 80, 115324.
(26) Han, S. H.; Cho, C. Y.; Lee, S. J.; Park, T. Y.; Kim, T. H.; Park,
’ AUTHOR INFORMATION S. H.; Kang, S. W.; Kim, J. W.; Kim, Y. C.; Park, S. J. Appl. Phys. Lett.
2010, 96, 051113.
Corresponding Author
(27) Ozgur, U.; Liu, H. Y.; Li, X.; Ni, X. F.; Morkoc, H. Proc. IEEE
*E-mail: zetian.mi@mcgill.ca. 2010, 98, 1180.
(28) Ni, X. F.; Fan, Q.; Shimada, R.; Ozgur, U.; Morkoc, H. Appl.
Phys. Lett. 2008, 93, 171113.
’ ACKNOWLEDGMENT (29) Huang, C. F.; Lu, C. F.; Tang, T. Y.; Huang, J. J.; Yang, C. C.
This work was supported by the Natural Sciences and En- Appl. Phys. Lett. 2007, 90, 151122.
gineering Research Council of Canada (NSERC), the Fonds de (30) Funato, M.; Hayashi, K.; Ueda, M.; Kawakami, Y.; Narukawa,
Y.; Mukai, T. Appl. Phys. Lett. 2008, 93, 021126.
recherche sur la nature et les technologies, Canada Foundation for
(31) Kuykendall, T.; Ulrich, P.; Aloni, S.; Yang, P. Nat. Mater. 2007,
Innovation, and the Hydro-Quebec Nano-Engineering Program 6, 951.
at McGill University. Part of the work was performed in the (32) Chang, Y. L.; Wang, J. L.; Li, F.; Mi, Z. Appl. Phys. Lett. 2010,
McGill University Micro Fabrication Facility. Electron micro- 96, 013106.
scopy images and analysis with the Titan 80-300 Cubed was (33) Yen, S. H.; Tsai, M. L.; Tsai, M. C.; Chang, S. J.; Kuo, Y. K. IEEE
carried out at the Canadian Centre for Electron Microscopy, a Photonics Technol. Lett. 2010, 22, 1787.
National facility supported by NSERC and McMaster University. (34) Hong, C. C.; Ahn, H.; Wu, C. Y.; Gwo, S. Opt. Express 2009,
17, 17227.
(35) Ryu, H. Y.; Kim, H. S.; Shim, J. I. Appl. Phys. Lett. 2009, 95,
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