InGaN / GaN MQW based Insulated Gate Light Emitting Diode for Bias Dependent Optical
Device Applications
P. P. Pancham1, P.Das2, S.Mallik2, S.S.Mahato2, C.Y. Lo1
1
National Tsing Hua University, Hsinchu, Taiwan
2
National Institute of Science and Technology, Berhampur, India
chengyao@mx.nthu.edu.tw
ABSTRACT
In this work, a novel phosphor free InGaN/GaN multiple
quantum well (MQW) structure along with a novel control
terminal is proposed and simulated. The structure has been
graded with different indium molar percentage 15
InGaN/GaN quantum wells to get different emission
wavelengths. By incorporating a gate control, a 2D
bounded region in the CIE chromaticity diagram which
results in supporting different colors was realized which
gives an extra degree of freedom for controlling the light
color. In addition to the color variety, intensity and
wavelength of photon generations are optimized by
quantum well quantity, indium content in the InGaN
layers, and control of terminal voltage. Anode voltage was
varied from 3.5V to 5V at for different gate voltages to
generate a locus of points on the CIE chromaticity diagram
at different locations. With the quantum well structure, it
was possible only to get a fixed set of points on the CIE
chromaticity diagram. However, with the incorporation of
this gate control, along with the extra degree of freedom it
is possible to generate a totally different locus of points by
varying the gate voltage together with the anode voltage.
These improved results cover much more area on CIE
chromaticity diagram and color spectrum in comparison to
only quantum well structure. With the proposed scenario,
a new application area of color mapping with bias
dependent single light emitting diode (LED) structure has
been revealed.
Keywords: InGaN/GaN, LED Simulation guidelines,
Quantum well.
1. INTRODUCTION
III-V nitride compound semiconductors-based light-
emitting diodes (LEDs) for ultraviolet (UV) to red
wavelength emissions show applications such as traffic
light, full color display, and lighting, are of great interest
since last few decades[1]. Recently, GaN based light-
emitting diodes (LEDs) have been rapidly developed
because of their tremendous potential for energy-efficient
lighting and widespread LED applications.
The most used method to achieve white Light is to
combine a phosphor wavelength converter with the short
wavelength LED (blue or UV). The light emitted from the
LED chip is absorbed by the phosphor and re-emitted with
a lower energy, which means the light has a longer
wavelength. However, this method has some
disadvantages such as shorter lifetime and low reliability.
To solve these problems, with the further improvements’
phosphor-free white LEDs were developed and
demonstrated using Multiple Quantum Wells (MQWS) by
various groups to realize the phosphor free white LEDs[2].
Various modelling studies based on MQWs has been
performed by various groups[3][4]. In this context, our
work reports a simulation of phosphor free GaN/InGaN
multiple quantum well structure where intensity and the
wavelength of photon generations are tailored by number
of quantum well and Indium content in the InGaN layers
respectively to match the white light spectrum.
.
2. DESIGN AND SIMULATION
2.1. Design of Multiple Quantum Well LED
In the proposed device structure 15 quantum wells are used
to achieve the white light spectra. The structure has been
graded with different Indium molar percentage
InGaN/GaN quantum wells to get different emission
wavelengths. A well width of 3 nm (InGaN) and barrier
height 10 nm (GaN) is kept uniform throughout. It has
been done so, keeping in mind about the feasibility of the
fabrication of this structure in future. The structure has
been graded with different Indium molar percentage
(In0.5Ga0.5N/GaN to In0.2Ga0.8N/GaN) quantum wells to get
different emission wavelengths. The different values of x
(molar concentration) for InxGa1-xN in the 15 different
layers are given for generation of different wavelengths of
light which will ultimately results in the generation of
white light. For the first 5 quantum wells the molar
concentration is 0.5. After that the molar concentration
varied from 0.4 to 0.2 for the next 10 quantum wells.
A control gate is added which gives an extra degree of
freedom for controlling the light color. Before the control
gate a 3nm thin layer of Silicon Nitride (Si3N4) is given as
an insulator. Schematic of the whole device structure is
depicted in Figure 1.
3. RESULTS AND DISCUSSION
The Proposed device structure of LED (Light
Emitting Diode) with a novel gate terminal gives and extra
degree of freedom to control light color in a single LED.
The various materials used for the simulation are GaN
(Gallium Nitride), AlGaN (Aluminium Gallium Nitride),
InGaN (Indium Gallium Nitride) and Silicon Nitride
(Si3N4) as an insulator between the device and the metal layer design, electron cooler, and electron
contact. blocking layer,” vol. 2912, no. 12, pp. 2907–
In this device, 15 number of InGaN/GaN quantum 2912, 2011, doi: 10.1002/pssa.201127250.
wells with different Indium molar concentration are there
where a 3nm InGaN Layer sandwiched between the GaN
Layers. Also, the 3nm wide layer of Si3N4 is depicted. The
reason for making 15 number of quantum wells is to
increase the efficiency of Light Emitting Diode.
Along with control gate, this LED has three
terminals: Anode, cathode and gate. Gate voltage was
varied from 3.5 V to 5 V for each anode voltage sweep
ranging from 3.5V to 5V.
Previously when there were only anode and cathode
terminals and anode voltage sweep from 3.5V to 5V was
done, it only gave a fixed locus of points on the CIE
chromaticity diagram. However, it was not possible to
generate another point on CIE chromaticity diagram.
When the control gate terminal was incorporated in
the structure, it somehow provided tunability to the device.
Now for every particular gate voltage, the anode voltage
sweep shows a different locus of points on the CIE
chromaticity diagram. The CIE chromaticity diagram
showing different locus of points for different gate
voltages is depicted in Figure 2. Figure 1. Schematic of device structure

4. CONCLUSION
An insulated gate LED with 15 number of quantum
well with a novel control terminal incorporation has been
simulated to get one more degree of freedom. This resulted
in decoupled emissions of multiple wavelength photons
from different quantum wells aligned to the visible white
light spectrum. The coverage of total solar spectrum due to
Indium Gallium Nitride (InGaN) with different Indium
molar fractions (bandgap varying from 0.7 eV to 3.4 eV
corresponding to wavelength variation of 400 nm to 700
nm) results the total spectrum of visible light generation.

5. REFERENCES
[1] J. Cho, J. H. Park, J. K. Kim, and E. F. Schubert,
“White light-emitting diodes : History , progress ,
and future,” vol. 1600147, 2017, doi: Figure 2. CIE Chart showing the locus of points of a
10.1002/lpor.201600147. novel LED having 15 number of quantum well and gate
control.
[2] L. W. Ji, Y. K. Su, and S. J. Chang, “InGaN /
GaN multi-quantum dot light-emitting diodes,”
vol. 2408, no. 10, pp. 2405–2408, 2004, doi:
10.1002/pssc.200404999.
[3] V. F. Mymrin, K. A. Bulashevich, N. I.
Podolskaya, and I. A. Zhmakin, “Modelling study
of MQW LED operation,” vol. 2931, no. 7, pp.
2928–2931, 2005, doi: 10.1002/pssc.200461289.
[4] X. Li et al., “On the quantum efficiency of
InGaN light emitting diodes: Effects of active
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科技研討會/第 24 屆微奈米系統工程研討會

論文名稱： InGaN / GaN MQW based Insulated Gate Light

Emitting Diode for Bias Dependent Optical Device

Applications

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