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by 2N6052/D
SEMICONDUCTOR TECHNICAL DATA



 
 "
 !   
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain —


hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059 *Motorola Preferred Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
MAXIMUM RATINGS (1)

ÎÎÎ
DARLINGTON
12 AMPERE

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
2N6052
Rating Symbol 2N6058 2N6059 Unit COMPLEMENTARY

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
SILICON
Collector–Emitter Voltage VCEO 80 100 Vdc POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage

ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base voltage
VCB
VEB
80
5.0
100 Vdc
Vdc
80 – 100 VOLTS
150 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Current — Continuous

ÎÎÎÎÎÎÎ
ÎÎÎ
Peak
IC 12
20
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base Current IB 0.2 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Total Device Dissipation PD 150 Watts
@TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg
0.857
– 65 to + 200_C
W/_C
_C CASE 1–07

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range TO–204AA

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
(TO–3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Rating Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
RθJC 1.17 _C/W

160

140
PD, POWER DISSIPATION (WATTS)

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1998 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2N6052

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎ ÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
(IC = 100 mAdc, IB = 0) ÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)

ÎÎÎÎ ÎÎÎÎ ÎÎÎ 2N6058

VCEO(sus)
80 —
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
2N6052, 2N6059 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) 2N6058

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
— 1.0
(VCE = 50 Vdc, IB = 0) 2N6052, 2N6059 — 1.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
— 0.5
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO — 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎ
ÎÎÎ hFE —

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ
(IC = 6.0 Adc, VCE = 3.0 Vdc) 750 18,000

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(IC = 12 Adc, VCE = 3.0 Vdc) 100 —

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 6.0 Adc, IB = 24 mAdc) — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
(IC = 12 Adc, IB = 120 mAdc)

ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Base–Emitter Saturation Voltage
ÎÎÎ VBE(sat)
—
—
3.0
4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(IC = 12 Adc, IB = 120 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage VBE(on) — 2.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 6.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short Circuit Forward |hfe| 4.0 — MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Current Transfer Ratio

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance 2N6052 Cob — 500 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6058/2N6059 — 300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 300 — —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

CC V 10
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V
D1 MUST BE FAST RECOVERY TYPE, eg: 2N6052
5.0 2N6059
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE ts
TUT
V2 RB 2.0
t, TIME ( µs)

approx tf
+ 8.0 V
D1 1.0
51 ≈ 5.0 k ≈ 50
0
tr
V1 0.5
approx + 4.0 V
td @ VBE(off) = 0 VCC = 30 V
– 8.0 V 25 µs for td and tr, D1 is disconnected IC/IB = 250
and V2 = 0 0.2 IB1 = IB2
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0% TJ = 25°C
0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

2 Motorola Bipolar Power Transistor Device Data

 2N6052
1.0
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.3 0.2
0.2
0.1 P(pk)
RθJC(t) = r(t) RθJC
0.1 0.05 RθJC = 1.17°C/W MAX
0.07 D CURVES APPLY FOR POWER
0.02
0.05 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.03 0.01 TJ(pk) – TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)

Figure 4. Thermal Response

ACTIVE–REGION SAFE OPERATING AREA

50 50
0.1 ms 0.1 ms
20 20
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 10
5.0 0.5 ms 5.0 0.5 ms
1.0 ms 1.0 ms
2.0 2.0 5.0 ms
5.0 ms
1.0 TJ = 200°C 1.0 TJ = 200°C
0.5 0.5
SECOND BREAKDOWN LIMITED SECOND BREAKDOWN LIMITED
0.2 BONDING WIRE LIMITED dc 0.2 BONDING WIRE LIMITED dc
0.1 THERMAL LIMITATION 0.1 THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE) @TC = 25°C (SINGLE PULSE)
0.05 0.05
10 20 30 50 70 100 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6058 Figure 6. 2N6052, 2N6059

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transis-
tor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
v
limits are valid for duty cycles to 10% provided TJ(pk) 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.

3000 500
2000 TC = 25°C TJ = 25°C
hfe, SMALL–SIGNAL CURRENT GAIN

VCE = 3.0 V
1000 IC = 5.0 A 300
C, CAPACITANCE (pF)

500 200 Cib

200 Cob

100
100
2N6052
2N6058/2N6059 70 2N6052
50 2N6058/2N6059
30 50
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Small–Signal Current Gain Figure 8. Capacitance

Motorola Bipolar Power Transistor Device Data 3

2N6052
PNP NPN
2N6052 2N6058, 2N6059
20,000 40,000
VCE = 3.0 V VCE = 3.0 V
20,000 TJ = 150°C
10,000
TJ = 150°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

5000 10,000

3000 6,000 25°C

25°C
2000 4,000

1000 – 55°C 2,000

500 1,000 – 55°C

300 600
200 400
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A

IC = 3.0 A 6.0 A 9.0 A 12 A
2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.5 1.0 2.0 3.0 5.0 10 20 30 50 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V VBE @ VCE = 3.0 V

1.0 1.0

VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250

0.5 0.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data

 2N6052
PACKAGE DIMENSIONS

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO–204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B ––– 1.050 ––– 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

Motorola Bipolar Power Transistor Device Data 5

2N6052

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6 ◊ Motorola Bipolar Power Transistor Device Data

2N6052/D