ESE319 Introduction to Microelectronics

Common Base BJT Amplifier

Common Collector BJT Amplifier
● Common Collector (Emitter Follower) Configuration
● Common Base Configuration

● Small Signal Analysis

● Design Example

● Amplifier Input and Output Impedances

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 1

 ESE319 Introduction to Microelectronics

Basic Single BJT Amplifier Features

CE Amplifier CC Amplifier CB Amplifier
Voltage Gain (AV) moderate (-RC/RE) low (about 1) high

Current Gain (AI) moderate (  ) moderate ( 1) low (about 1)

Input Resistance high high low

Output Resistance high low high

CE BJT amplifier => CS MOS amplifier
CC BJT amplifier => CD MOS amplifier
CB BJT amplifier => CG MOS amplifier
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 2
 ESE319 Introduction to Microelectronics

Common Collector ( Emitter Follower)

Amplifier

In the emitter follower, the

output voltage is taken be-
tween emitter and ground.
vout The voltage gain of this ampli-
fier is nearly one – the output
“follows” the input - hence the
name: emitter “follower.”

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 3

 ESE319 Introduction to Microelectronics

Emitter Follower Biasing

iC
Then, choose/specified IE, and
the rest of the design follows:
Vb

iB vout V E V CC / 2−0.7
iE RE = =
IE IE

For an assumed  = 100:

Split bias voltage drops about As with CE bias design, stable op.
equally across the transistor pt. => RB ≪1 RE , i.e.
VCE (or VCB) and VRe (or VB).
R1 RE
For simplicity,choose: RB= R1∥ R2 = =1 ≈10 RE
2 10
V CC
V B= ⇒ R1 = R2 R1 = R2=20 RE
2
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 4
 ESE319 Introduction to Microelectronics

Typical Design
Choose: I E =1 mA
V CC =12 V iC

And the rest of the design Vb

follows immediately: iB vout

iE
V E 12/ 2−0.7
RE = = =5.3 k 
IE 10
−3

Use standard sizes!

RE =5.1 k 
R1 = R2=100 k 

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 5

 ESE319 Introduction to Microelectronics

Equivalent Circuits

RB= R1∥R2

Rb vout
vout

<=>

VCC/2

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 6

 ESE319 Introduction to Microelectronics

Multisim Bias Check

IE
V Rb= I B R B= R =0.495 V
1 B

iB

vout -
Rb vout
VRb
<=> +

Identical results – as expected!

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 7

 ESE319 Introduction to Microelectronics

Emitter Follower Small Signal Circuit

Mid-band equivalent circuit:
RB 50
vsig ' = vsig = vsig ≈ vsig
RB RS 50.05 vout

Rb
50
RTH = RS∥ RB= RS ≈ RS
50.05

Small signal mid-band circuit - where CB has negligible reactance

(above min). Thevenin circuit consisting of RS and RB shows
effect of RB negligible, since it is much larger than RS.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 8

 ESE319 Introduction to Microelectronics

Follower Small Signal Analysis - Voltage Gain

Circuit analysis:
vsig = RS  r 1 RE  i b
ib Solving for ib
v sig
i b=
ie vout RS  r 1 RE

RE 1 v sig
vout =
RS  r  1 RE
vout RE v sig
AV = = ≈1
vsig RS r 
 RE
1
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 9
 ESE319 Introduction to Microelectronics

Small Signal Analysis – Voltage Gain - cont.

vout RE
=
v sig RS  r 
 RE
1

vout Since, typically:

RS  r 
≪ RE
1

vout RE
AV = ≈ =1
v sig RE
Note: AV is non-inverting
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 10
 ESE319 Introduction to Microelectronics

Blocking Capacitor - CB - Selection

+ ib
Use the base current expression:
vbg = r  i b  RE i E = r  1 i b
Rb
vbg
vbg
i b=
-
r 1 RE
RRinB=50 k ≫ RS vbg
RS =50 r bg = = r 1 RE ≈1 RE =101⋅5.1 k =515 k 
ib
To obtain the base to ground resistance of the transistor:
This transistor input resistance is in parallel with the 50 k 
RB, forming the total amplifier input resistance:
515
Ri n = RS  RB∥r bg ≈ RB∥r bg = 50 k =45.6 k 
51550

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 11

 ESE319 Introduction to Microelectronics
CB – Selection cont.
Choose CB such that its reactance is ≤ 1/10 of Rin at min:
1 Ri n Assume the lowest frequency
=
 C B 10 is 20 Hz:
10  min=2 20≈125=1.25⋅102
CB ≥
min Ri n
−7
=100
10⋅10
CB ≥ ≈1.73 F Ri n≈46 k 
1.25⋅0.46

Pick CB = 2  F (two 1 F caps in parallel), the nearest standard

value in the RCA Lab. We could be (unnecessarily) more precise
and include Rs as part of the total resistance in the loop. It is very
small compared to Rin.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 12
 ESE319 Introduction to Microelectronics

Final Design

2.0 uF

vout

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 13

 ESE319 Introduction to Microelectronics

Multisim Simulation Results

20 Hz. Data

1 Khz. Data
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 14
 ESE319 Introduction to Microelectronics

Of What value is a Unity Gain Amplifier?

To answer this question,

ib
we must examine the
output impedance of the
ie vout amplifier and its power
gain.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 15

 ESE319 Introduction to Microelectronics

Emitter Follower Output Resistance

−i x
ib i x=−i b− i b =−1 i b ⇒ i b =
1
0 vout RS  r 
v x=−i b  Rs r  = i
ix 1 x
vx
Rout v x RS  r  r
Rout = = ≈
ix 1 1
Rout is the Thevenin resistance looking
RB=50 k ≫ RS
into the open-circuit output.
Assume:
VT VT 2550
I C =1 mA⇒ r  = = =2500  Rout ≈ =25.5
IB IC 100
=100 RS =50
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 16
 ESE319 Introduction to Microelectronics

Multisim Verification of R out

Rout
i x=−1 i x
i sc =i x
Av*vsig vsig = RS i b  r  i b
Rin AV = 1 <=>
AV v sig RS  r 
+ Rout = =
ix 1
Rin = RS  r 1 RE∥ RL≈1 RL voc= AV v sig
i sc =i x
-

Thevenin equivalent for the

short-circuited emitter follower. Multisim short circuit check
If  was 200, as for most good (  = 100, vout = vsig):
NPN transistors, Rout would be
voc AV v sig  rms  1
lower - close to 12 . Rout = = = =25.25
i sc i sc  rms  0.0396

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 17

 ESE319 Introduction to Microelectronics

Equivalent Circuits with Load R L

ib
Rout
vout v
Z in = sig
i 'e +
ie Rin +
Av*vsig vload RL||Re
<=> -
RL -

vsig  rms  1
Rout = = =25.25
i sc  rms  0.0396
Rin= RS  r  1 RE∥RL≈1 RL

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 18

 ESE319 Introduction to Microelectronics

Emitter Follower Power Gain

Consider the case where a RL = 50  load is connected through an infinite
capacitor to the emitter of the follower we designed. Using its Thevenin
equivalent: isig Rout≈25  C =∞

+ iload
+ AV ≈1
vsig Rin vload RL≈50
- Av*vsig
vth=G vsig
-

RL AV vsig 50 2
50  load is in parallel with 5.1k 
vload = = v = v RE and dominates:
RL Rout 75 sig 3 sig vsig vsig v sig
AV vsig v sig i sig =i b = ≈ ≈
i load = =
Rin 1 RE∥RL 101⋅50
Rout  RL 75 1
v2sig
p sig =v sig i sig ≈
2 2 5000
pload =vload i load = vsig pload 25000
225 G pwr = = =44.4≫1
p sig 225
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 19
 ESE319 Introduction to Microelectronics

The Common Base Amplifier

vout
vout

Voltage Bias Design Current Bias Design

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 20

 ESE319 Introduction to Microelectronics

Common Base Configuration

Both voltage and current biasing follow the same rules as
those applied to the common emitter amplifier.

As before, insert a blocking capacitor in the input signal path

to avoid disturbing the dc bias.

The common base amplifier uses a bypass capacitor – or a

direct connection from base to ground to hold the base at
ground for the signal only!

The common emitter amplifier (except for intentional RE

feedback) holds the emitter at signal ground, while the common
collector circuit does the same for the collector.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 21
 ESE319 Introduction to Microelectronics

Voltage Bias Common Base Design

47k Ohm 4.7 k Ohm

vout

5.1k Ohm
470 Ohm

We keep the same bias that we

established for the gain of 10
common emitter amplifier.
All that we need to do is pick the
capacitor values and calculate
the circuit gain.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 22
 ESE319 Introduction to Microelectronics

Common Base Small Signal Analysis - C IN

i'b ib
4.7 k Ohm Determine CIN: (let C B=∞)
∞ ic
I'c Find a equivalent impedance for
i'e ie the input circuit, RS, CIN, and RE2:
RE2∥r e
vRe2= vsig r = r 
isig 1 e
1
RE2∥r e  RS 
470 Ohm j  C IN

Zin RE2∥r e
ideally vRe2= R ∥r  R vsig for  ≥  min
E2 e S
re
1 1 RS  r e 10
≪ RS  RE2∥r e ⇒ = ⇒ C IN =
 min C IN  min C IN 10 min  RS  r e 

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 23

 ESE319 Introduction to Microelectronics

Determine C IN cont.
A suitable value for CIN for a 20 Hz lower frequency:
10 10
 min C IN  RS  r e ≫1⇒ C IN ≥ = F
2 min  RS  r e  2  20⋅75

10
C IN = ≈1062  F ! Not too practical!
125.6⋅75
Must choose smaller value of CIN.
1. Choose:  min C IN  RS  r e =1
or
2. Choose larger  min

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 24

 ESE319 Introduction to Microelectronics

Small-signal Analysis - C B
i'b i'c Determine CB: (let C IN =∞)
Note the reference current
ib
ib'
ic reversals (due to vsig polarity)!

RE2 >> RS
i'e
'
v sig = R i  r 
S e

1
j CB
i 'b

 
'
ie 1 i
v sig = RS i'e  r  e
j  C B 1
Zin

v sig ' 1

i= vsig
Determine Z in = '
e
1
i e
1 RS  r 
j CB
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 25
 ESE319 Introduction to Microelectronics

Determine – CB
i'b i'c
' 1
i=e vsig
ib' 1
1 RS  r 
j CB

i'e ' v sig

i=
 
e
RE2 >> RS 1 1
RS  r 
1 j C B
Zin

Z in=
v sig
i 'e
= RS 
1
1 
r 
1
j CB 
r 1
ideally Z in≈ RS  ⇒ ≪1 RS  r  for  ≥  min
1  C B
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 26
 ESE319 Introduction to Microelectronics

Determine - C B cont.
i'b i'c
vout For  ≥  min
r 1
ib' Z in≈ RS  ⇒ ≪1 RS  r 
1  C B

i'e Choose:
RE2 >> RS 10
C B≥ F
min 1 RS  r  

i.e.
10
C B≥ =10.5  F
2  20  1001502500 

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 27

 ESE319 Introduction to Microelectronics

Small-signal Analysis – Voltage Gain

∞ ' 1 1
ib' i≈ v sig = v sig
e
RS 
r  RS  r e 
1

RE2 >> RS '  RC

'
vout = R i = R i =
C c C e vsig
1 RS  r e

vout  RC 100 5100

Assume: C B=C IN =∞ AV = = = ≈67
vsig 1 RS  r e 101 5025

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 28

 ESE319 Introduction to Microelectronics

Multisim Simulation

1062 uF

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 29

 ESE319 Introduction to Microelectronics

Multisim Frequency Response

20 Hz. response

1 KHZ. Response

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL 30