Rectifier Device Data PDF

I a •1- a
7
Index and Cross Reference 1
Selector Guide 2
Schottky Data Sheets 3
Ultrafast Data Sheets 4
Standard and Fast Recovery

Data Sheets 5
Tape and Reel/

Packaging Specifications 6
Surface Mount Information 7
TO–220 Leadform Options 8
Package Outline Dimensions

and Footprints 9
AR598: Avalanche Capability of

Today’s Power Semiconductors 10
Rectifier Device Data
This book presents technical data for Motorola’s broad line of rectifiers. Complete
specifications are provided in the form of data sheets and accompanying selection
guides provide a quick comparison of characteristics to simplify the task of choosing
the best device for a circuit.
The information in this book has been carefully checked and is believed to be accu-
rate; however, no responsibility is assumed for inaccuracies.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifi-
cally disclaims any and all liability, including without limitation consequential or incidental damages. “Typical”
parameters can and do vary in different applications. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Motorola does not convey any
license under its patent rights nor the rights of others. Motorola products are not designed, intended, or autho-
rized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the Motorola product could
create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products
for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was
negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of
Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
 Motorola, Inc. 1995

Previous Edition  1993
“All Rights Reserved” Printed in U.S.A.
i
DATA CLASSIFICATION
PRODUCT PREVIEW
Data sheets herein contain information on a product under development. Motorola reserves the right to change or discontinue
these products without notice.
ADVANCED INFORMATION
Data sheets herein contain information on new products. Specifications and information are subject to change without notice.
FORMAL
For a fully characterized device there must be devices in the warehouse and price authorization.
DESIGNER’S
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. Limit curves — representing
boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA DEVICE CLASSIFICATIONS

In an effort to provide up-to-date information to the customer regarding the status of any given device, Motorola has classified
all devices into three categories: “Preferred” products, “Current” products and “Not Recommended for New Design” products.
PREFERRED PRODUCTS
A Preferred Type is a device which is recommended as a first choice for future use. These devices are “preferred” by virtue of
their performance, price, functionality, or combination of attributes which offer the overall “best” value to the customer. This
category contains both advanced and mature devices which will remain available for the foreseeable future.
“Preferred Devices” are identified in the Selector Guide Section and the Data Sheet Sections.
CURRENT PRODUCTS
Device types identified as “current” may not be a first choice for new designs, but will continue to be available because of the
popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new
designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a “preferred device” is a “current” device.
NOT RECOMMENDED FOR NEW DESIGN PRODUCTS

Products designated as “Not Recommended for New Design” have become obsolete as dictated by poor market acceptance,
or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do
not represent a good selection for new device designs or long term usage.
The RF Device Data book does not contain any “Not Recommended for New Design” devices.
Designer’s, MEGAHERTZ, POWERTAP, SCANSWITCH, SWITCHMODE and Surmetic are trademarks of Motorola Inc.
Thermal Clad is a trademark of the Bergquist Company.
ii
Section 1
Index and Cross Reference
Rectifier Device Data Index and Cross Reference

1–1
Index and Cross Reference
The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by
Motorola or for which Motorola manufactures a suitable equivalent. Where the Motorola part number differs from the industry part
number, the Motorola device is a form, fit and function replacement for the industry type number — however, subtle differences in
characteristics and/or specifications may exist. The part numbers listed in this Cross Reference are in computer sort.
Motorola Motorola Motorola Motorola

Industry Nearest Similar Page Industry Nearest Similar Page
Part Number Replacement Replacement Number Part Number Replacement Replacement Number
10CTF10 MUR840 4–56 1N4245GP 1N4003 5–2

10CTF20 MUR840 4–56 1N4246 1N4004 5–2
10CTF30 MUR840 4–56 1N4246GP 1N4004 5–2
10CTF40 MUR840 4–56 1N4247 1N4005 5–2
10DL1 1N4934 5–3 1N4247GP 1N4005 5–2
10DL2 1N4935 5–3 1N4248 1N4006 5–2
10TQ030 MBR1045 3–86 1N4248GP 1N4006 5–2
10TQ035 MBR1045 3–86 1N4249 1N4007 5–2
10TQ040 MBR1045 3–86 1N4249GP 1N4007 5–2
10TQ045 MBR1045 3–86 1N4933 1N4933 5–3
11DQ03 1N5818 3–38 1N4933GP 1N4933 5–3

11DQ04 1N5819 3–38 1N4934 1N4934 5–3
11DQ05 MBR160 3–43 1N4934GP 1N4934 5–3
11DQ06 MBR160 3–43 1N4935 1N4935 5–3
11DQ09 MBR1100 3–46 1N4935GP 1N4935 5–3
11DQ10 MBR1100 3–46 1N4936 1N4936 5–3
12CTQ030 MBR1545CT 3–64 1N4936GP 1N4936 5–3
12CTQ035 MBR1545CT 3–64 1N4937 1N4937 5–3
12CTQ040 MBR1545CT 3–64 1N4937GP 1N4937 5–3
12CTQ045 MBR1545CT 3–64 1N4942 1N4935 5–3
15CTO035 MBR1545CT 3–64 1N4942GP 1N4935 5–3

15CTQ045 MBR1545CT 3–64 1N4943 1N4936 5–3
1N2069,A 1N4003 5–2 1N4944 1N4936 5–3
1N2070,A 1N4004 5–2 1N4944GP 1N4936 5–3
1N2071,A 1N4005 5–2 1N4945 1N4937 5–3
1N3611 1N4003 5–2 1N4946 1N4937 5–3
1N3611GP 1N4003 5–2 1N4946GP 1N4937 5–3
1N3612 1N4004 5–2 1N5185 MR852 5–6
1N3612GP 1N4004 5–2 1N5185GP MR852 5–6
1N3613 1N4005 5–2 1N5186 MR852 5–6
1N3613GP 1N4005 5–2 1N5186GP MR852 5–6

1N3614 1N4006 5–2 1N5187 MR852 5–6
1N3614GP 1N4006 5–2 1N5187GP MR852 5–6
1N3957 1N4007 5–2 1N5188 MR856 5–6
1N3957GP 1N4007 5–2 1N5188GP MR856 5–6
1N4001 1N4001 5–2 1N5189 MR856 5–6
1N4001GP 1N4001 5–2 1N5189GP MR856 5–6
1N4002 1N4002 5–2 1N5190 MR856 5–6
1N4002GP 1N4002 5–2 1N5190GP MR856 5–6
1N4003 1N4003 5–2 1N5400 1N5400 5–5
1N4003GP 1N4003 5–2 1N5401 1N5401 5–5

1N4004 1N4004 5–2 1N5402 1N5402 5–5
1N4004GP 1N4004 5–2 1N5403 1N5404 5–5
1N4005 1N4005 5–2 1N5404 1N5404 5–5
1N4005GP 1N4005 5–2 1N5405 1N5406 5–5
1N4006 1N4006 5–2 1N5406 1N5406 5–5
1N4006GP 1N4006 5–2 1N5415 MR852 5–6
1N4007 1N4007 5–2 1N5416 MR852 5–6
1N4007GP 1N4007 5–2 1N5417 MR852 5–6
1N4245 1N4003 5–2 1N5418 MR856 5–6
Index and Cross Reference Rectifier Device Data

1–2
INDEX AND CROSS REFERENCE (continued)
1N5419 MR856 5–6 20FQ020 MBR3545 3–148
1N5420 MR856 5–6 20FQ030 MBR3545 3–148
1N5614 1N4003 5–2 20FQ035 MBR3545 3–148
1N5615 1N4935 5–3 20FQ040 MBR3545 3–148
1N5615GP 1N4935 5–3 20FQ045 MBR3545 3–148
1N5616 1N4004 5–2 21DQ03 1N5821 3–49
1N5617 1N4936 5–3 21DQ04 1N5822 3–49
1N5617GP 1N4936 5–3 21FQ030 MBR3545 3–148
1N5618 1N4005 5–2 21FQ035 MBR3545 3–148
1N5619 1N4937 5–3 21FQ040 MBR3545 3–148
1N5619GP 1N4937 5–3 21FQ045 MBR3545 3–148

1N5620 1N4006 5–2 28CPQ030 MBR3045PT 3–119
1N5802 MUR420 4–31 28CPQ040 MBR3045PT 3–119
1N5803 MUR420 4–31 30CTQ030 MBR2545CT 3–80
1N5804 MUR420 4–31 30CTQ035 MBR2545CT 3–80
1N5805 MUR420 4–31 30CTQ040 MBR2545CT 3–80
1N5806 MUR420 4–31 30CTQ045 MBR2545CT 3–80
1N5807 MUR420 4–31 30DL1 MR852 5–6
1N5808 MUR420 4–31 30DL2 MR852 5–6
1N5809 MUR420 4–31 31DQ03 1N5821 3–49
1N5810 MUR420 4–31 31DQ04 1N5822 3–49

1N5811 MUR420 4–31 31DQ05 MBR360 3–53
1N5817 1N5817 3–38 31DQ06 MBR360 3–53
1N5818 1N5818 3–38 31DQ09 MBR3100 3–57
1N5819 1N5819 3–38 31DQ10 MBR3100 3–57
1N5820 1N5820 3–49 40CDQ020 MBR3045CT 3–178
1N5821 1N5821 3–49 40CDQ030 MBR3045CT 3–178
1N5822 1N5822 3–49 40CDQ035 MBR3045CT 3–178
1N5823 1N5823 3–60 40CDQ040 MBR3045CT 3–178
1N5824 1N5824 3–60 40CDQ045 MBR3045CT 3–178
1N5825 1N5825 3–60 40D1 MR754 5–8

1N5826 1N5826 3–135 40D2 MR754 5–8
1N5827 1N5827 3–135 40D4 MR754 5–8
1N5828 1N5828 3–135 40D6 MR760 5–8
1N5829 1N5829 3–139 40D8 MR760 5–8
1N5830 1N5830 3–139 50HQ020 MBR6045 3–164
1N5831 1N5831 3–139 50HQ030 MBR6045 3–164
1N5832 1N5832 3–152 50HQ035 MBR6045 3–164
1N5833 1N5833 3–152 50HQ040 MBR6045 3–164
1N5834 1N5834 3–152 50HQ045 MBR6045 3–164
1N6095 1N6095 3–144 50SQ030 1N5824 3–60

1N6096 1N6096 3–144 50SQ040 1N5825 3–60
1N6097 1N6097 3–156 51HQ045 MBR6045 3–164
1N6098 1N6098 3–156 52HQ030 MBR6045 3–164
1N6391 MBR3545 3–148 52HQ035 MBR6045 3–164
1N6392 MBR6545 3–168 52HQ040 MBR6045 3–164
200CNQ020 MBRP30045CT 3–183 52HQ045 MBR6045 3–164
200CNQ030 MBRP30045CT 3–183 55HQ015 MBR7545 3–172
200CNQ035 MBRP30045CT 3–183 55HQ020 MBR7545 3–172
200CNQ040 MBRP30045CT 3–183 55HQ025 MBR7545 3–172
200CNQ045 MBRP30045CT 3–183 55HQ030 MBR7545 3–172

201CNQ020 MBRP20045CT 3–182 60CDQ020 MBR3045CT 3–178
20CTQ030 MBR2045CT 3–69 6A05 MR754 5–8
20CTQ035 MBR2045CT 3–69 6A1 MR754 5–8
20CTQ040 MBR2045CT 3–69 6A10 MR760 5–8
20CTQ045 MBR2045CT 3–69 6A2 MR754 5–8

1–3
6A4 MR754 5–8 BYQ28–200 MUR1620CT 4–46
6A6 MR760 5–8 BYQ28–50 MUR1620CT 4–46
6A8 MR760 5–8 BYR29–600 MUR860 4–56
75HQ030 MBR8045 3–174 BYS76 MBR7545 3–172
75HQ035 MBR8045 3–174 BYS80 MBR3045CT 3–178
75HQ040 MBR8045 3–174 BYS92–40 MBRP20045CT 3–182
75HQ045 MBR8045 3–174 BYS92–45 MBRP20045CT 3–182
85HQ030 MBR8045 3–174 BYS92–50 MBRP20060CT 3–182
85HQ035 MBR8045 3–174 BYS93–40 MBRP30045CT 3–183
85HQ040 MBR8045 3–174 BYS93–45 MBRP30045CT 3–183
85HQ045 MBR8045 3–174 BYS93–50 MBRP30060CT 3–183

A114A 1N4934 5–3 BYS95–40 MBRP20045CT 3–182
A114B 1N4935 5–3 BYS95–45 MBRP20045CT 3–182
A114C 1N4936 5–3 BYS95–50 MBRP20060CT 3–182
A114D 1N4936 5–3 BYS97–40 MBRP20045CT 3–182
A114E 1N4937 5–3 BYS97–45 MBRP20045CT 3–182
A114F 1N4933 5–3 BYS97–50 MBRP20060CT 3–182
A114M 1N4937 5–3 BYS98–40 MBRP20045CT 3–182
A115A MR852 5–6 BYS98–45 MBRP20045CT 3–182
A115B MR852 5–6 BYS98–50 MBR1545CT 3–64
A115C MR856 5–6 BYT28–300 MUR1660CT 4–46

A115D MR856 5–6 BYT28–400 MUR1660CT 4–46
A115E MR856 5–6 BYT28–500 MUR1660CT 4–46
A115F MR852 5–6 BYT79–300 MUR1560 4–71
A115M MR856 5–6 BYT79–400 MUR1560 4–71
A14A 1N4002 5–2 BYT79–500 MUR1560 4–71
A14C 1N4004 5–2 BYV18–35 MBR1545CT 3–64
A14D 1N4004 5–2 BYV18–45 MBR1545CT 3–64
A14E 1N4005 5–2 BYV19–35 MBR1045 3–86
A14F 1N4001 5–2 BYV19–45 MBR1045 3–86
A14M 1N4005 5–2 BYV20–30 1N5827 3–135

A14N 1N4006 5–2 BYV20–45 1N5828 3–135
A14P 1N4007 5–2 BYV22–35 MBR3545 3–148
AR25A MR2504 5–12 BYV22–45 MBR3545 3–148
AR25B MR2504 5–12 BYV23–35 MBR8045 3–174
AR25D MR2504 5–12 BYV23–45 MBR8045 3–174
AR25G MR2504 5–12 BYV26A MUR120 4–23
AR25J MR2510 5–12 BYV26B MUR140 4–23
AR25K MR2510 5–12 BYV26C MUR160 4–23
AR25M MR2510 5–12 BYV27–100 MUR120 4–23
ARS25A MR2504 5–12 BYV27–150 MUR120 4–23

ARS25B MR2504 5–12 BYV27–50 MUR120 4–23
ARS25D MR2504 5–12 BYV28–100 MUR420 4–31
ARS25G MR2504 5–12 BYV28–150 MUR420 4–31
ARS25J MR2510 5–12 BYV28–50 MBR2045CT 3–69
ARS25K MR2510 5–12 BYV29–300 MUR1560 4–71
ARS25M MR2510 5–12 BYV29–400 MUR1560 4–71
BY229–200 MUR820 4–56 BYV29–500 MUR1560 4–71
BY229–400 MUR840 4–56 BYV33–35 MBR2045CT 3–69
BY229–600 MUR860 4–56 BYV33–40 MBR2045CT 3–69
BYP21–100 MUR820 4–56 BYV33–45 MBR2045CT 3–69

BYP21–150 MUR820 4–56 BYV39–35 MBR1645 3–92
BYP21–200 MUR820 4–56 BYV39–40 MBR1645 3–92
BYP21–50 MUR820 4–56 BYV39–45 MBR1645 3–92
BYP22–100 MUR3020PT 4–90 BYV43–35 MBR2545CT 3–80
BYP22–50 MUR3020PT 4–90 BYW29–100 MUR820 4–56
BYQ28–100 MUR1620CT 4–46 BYW29–150 MUR820 4–56
BYQ28–150 MUR1620CT 4–46 BYW29–200 MUR820 4–56

1–4
BYW29–50 MUR820 4–56 FE16F MUR1660CT 4–46
BYW29–50 MUR820 4–56 FE16G MUR1660CT 4–46
BYW80–100 MUR820 4–56 FE1A MUR120 4–23
BYW80–150 MUR820 4–56 FE1B MUR120 4–23
BYW80–200 MUR820 4–56 FE1C MUR120 4–23
BYW80–50 MUR820 4–56 FE1D MUR120 4–23
CPT12035 MBRP20045CT 3–182 FE2A MUR420 4–31
CPT12045 MBRP20045CT 3–182 FE2B MUR420 4–31
CPT12050 MBRP20060CT 3–182 FE2C MUR420 4–31
CPT20035 MBRP20045CT 3–182 FE2D MUR420 4–31

CPT20120 MBRP20030CTL 3–181 FE3C MUR420 4–31
CPT20125 MBRP20030CTL 3–181 FE3D MUR420 4–31
CPT30050 MBRP30060CT 3–183 FE5C MUR420 4–31
EGP10A MUR120 4–23 FE5D MUR420 4–31
EGP10B MUR120 4–23 FE6A MUR420 4–31
EGP10C MUR120 4–23 FE6B MUR420 4–31
EGP10D MUR120 4–23 FE6C MUR420 4–31

EGP20A MUR420 4–31 FE6D MUR420 4–31
EGP20B MUR420 4–31 FE8A MUR820 4–56
EGP20C MUR420 4–31 FE8B MUR820 4–56
EGP20D MUR420 4–31 FE8C MUR820 4–56
EGP30A MUR420 4–31 FE8D MUR820 4–56
EGP30B MUR420 4–31 FE8F MUR840 4–56
EGP30C MUR420 4–31 FE8G MUR840 4–56
EGP30D MUR420 4–31 FEP16AT MUR1620CT 4–46
EGP50A MUR420 4–31 FEP16BT MUR1620CT 4–46
EGP50B MUR420 4–31 FEP16CT MUR1620CT 4–46

EGP50C MUR420 4–31 FEP16DT MUR1620CT 4–46
EGP50D MUR420 4–31 FEP16FT MUR1660CT 4–46
ERA81 1N5819 3–38 FEP16GT MUR1660CT 4–46
ERB35 MUR120 4–23 FEP16HT MUR1660CT 4–46
ERB44 1N4935 5–3 FEP16JT MUR1660CT 4–46
ERB91 MUR120 4–23 FES16AT MUR1520 4–71
ERC24 1N4936 5–3 FES16BT MUR1520 4–71
ERC38 MUR140 4–23 FES16CT MUR1520 4–71
ERC62 MBR1045 3–86 FES16DT MUR1520 4–71
ERC80 MBR745 3–84 FES16FT MUR1560 4–71

ERC90 MUR820 4–56 FES16GT MUR1560 4–71
ERC91 MUR420 4–31 FES16HT MUR1560 4–71
ERD80 MBR3045CT 3–178 FES16JT MUR1560 4–71
ERD81 1N5828 3–135 FES8AT MUR820 4–56
ERE81 1N5834 3–152 FES8BT MUR820 4–56
ERG81,A MBR6045 3–164 FES8CT MUR820 4–56
ESAB33 MUR820 4–56 FES8DT MUR820 4–56
ESAB82 MBR745 3–84 FES8FT MUR840 4–56
ESAB92 MUR820 4–56 FES8GT MUR840 4–56
ESAC33 MUR820 4–56 FES8HT MUR860 4–56

ESAC82 MBR1045 3–86 FES8JT MUR860 4–56
ESAC92 MUR1520 4–71 FR061 1N4933 5–3
ESAC93 MUR3020PT 4–90 FR061L 1N4933 5–3
ESAD33 MUR3040PT 4–90 FR062 1N4934 5–3
ESAD81 MBR3045CT 3–178 FR062L 1N4934 5–3
FE16A MUR1620CT 4–46 FR063 1N4935 5–3
FE16B MUR1620CT 4–46 FR063L 1N4935 5–3
FE16C MUR1620CT 4–46 FR064 1N4936 5–3
FE16D MUR1620CT 4–46 FR065 1N4937 5–3

1–5
FR065L 1N4936 5–3 GI1004 MUR120 4–23
FR065L 1N4937 5–3 GI1101 MUR420 4–31
FR101 1N4933 5–3 GI1102 MUR420 4–31
FR102 1N4934 5–3 GI1103 MUR420 4–31
FR103 1N4935 5–3 GI1104 MUR420 4–31
FR104 1N4936 5–3 GI1301 MUR420 4–31
FR105 1N4937 5–3 GI1302 MUR420 4–31
FR251 MR852 5–6 GI1303 MUR420 4–31
FR252 MR852 5–6 GI1304 MUR420 4–31
FR253 MR852 5–6 GI1401 MUR820 4–56
FR254 MR856 5–6 GI1402 MUR820 4–56

FR255 MR856 5–6 GI1403 MUR820 4–56
FR301 MR852 5–6 GI1404 MUR820 4–56
FR302 MR852 5–6 GI2401 MUR1620CT 4–46
FR303 MR852 5–6 GI2402 MUR1620CT 4–46
FR304 MR856 5–6 GI2403 MUR1620CT 4–46
FR305 MR856 5–6 GI2404 MUR1620CT 4–46
FRM3205CC MUR3020PT 4–90 GI2500 MR2504 5–12
FRM3210CC MUR3020PT 4–90 GI2501 MR2504 5–12
FRM3215CC MUR3020PT 4–90 GI2502 MR2504 5–12
FRM3220CC MUR3020PT 4–90 GI2504 MR2504 5–12

FRP1605CC MUR1620CT 4–46 GI2506 MR2510 5–12
FRP1610CC MUR1620CT 4–46 GI2508 MR2510 5–12
FRP1615CC MUR1620CT 4–46 GI2510 MR2510 5–12
FRP1620CC MUR1620CT 4–46 GI5823 1N5823 3–60
FRP805 MUR820 4–56 GI5824 1N5824 3–60
FRP810 MUR820 4–56 GI5825 1N5825 3–60
FRP815 MUR820 4–56 GI750 MR754 5–8
FRP820 MUR820 4–56 GI751 MR754 5–8
FST1240 MBR1545CT 3–64 GI752 MR754 5–8
FST1245 MBR1545CT 3–64 GI754 MR754 5–8

FST1540 MBR1545CT 3–64 GI756 MR760 5–8
FST1545 MBR1545CT 3–64 GI758 MR760 5–8
FST20035 MBRP20045CT 3–182 GI850 MR852 5–6
FST20040 MBRP20045CT 3–182 GI851 MR852 5–6
FST20045 MBRP20045CT 3–182 GI852 MR852 5–6
FST20050 MBRP20060CT 3–182 GI854 MR856 5–6
FST2040 MBR2045CT 3–69 GI856 MR856 5–6
FST2045 MBR2045CT 3–69 GP10A 1N4001 5–2
FST2050 MBR2060CT 3–73 GP10B 1N4002 5–2
FST30035 MBRP30045CT 3–183 GP10D 1N4003 5–2

FST30040 MBRP30045CT 3–183 GP10G 1N4004 5–2
FST30045 MBRP30045CT 3–183 GP10J 1N4005 5–2
FST30050 MBRP30060CT 3–183 GP10K 1N4006 5–2
FST3040 MBR2545CT 3–80 GP10M 1N4007 5–2
FST3045 MBR2545CT 3–80 GP80A MUR820 4–56
FST6035 MBRP20045CT 3–182 GP80B MUR820 4–56
FST6040 MBRP20045CT 3–182 GP80D MUR820 4–56
FST6045 MBRP20045CT 3–182 GP80G MUR840 4–56
FST6050 MBRP20060CT 3–182 GP80J MUR860 4–56
GER4001 1N4001 5–2 HER101 MUR120 4–23

GER4002 1N4002 5–2 HER102 MUR120 4–23
GER4003 1N4003 5–2 HER103 MUR120 4–23
GER4004 1N4004 5–2 HER104 MUR140 4–23
GER4005 1N4005 5–2 HER105 MUR140 4–23
GER4006 1N4006 5–2 HER151 MUR120 4–23
GER4007 1N4007 5–2 HER152 MUR120 4–23
GI1001 MUR120 4–23 HER153 MUR120 4–23
GI1002 MUR120 4–23 HER154 MUR140 4–23
GI1003 MUR120 4–23 HER155 MUR140 4–23

1–6
HER301 MUR420 4–31 MBR3045WT MBR3045WT 3–127
HER302 MUR420 4–31 MBR3100 MBR3100 3–57
HER303 MUR420 4–31 MBR320 MBR340 3–53
HER801 MUR820 4–56 MBR330 MBR340 3–53
HER802 MUR820 4–56 MBR340 MBR340 3–53
HER803 MUR820 4–56 MBR350 MBR360 3–53
HER804 MUR840 4–56 MBR3520 MBR3545 3–148
HER805 MUR840 4–56 MBR3535 MBR3545 3–148
MBR10100 MBR10100 3–90 MBR3545 MBR3545 3–148
MBR1035 MBR1045 3–86 MBR360 MBR360 3–53
MBR1045 MBR1045 3–86 MBR370 MBR3100 3–57

MBR1060 MBR1060 3–90 MBR380 MBR3100 3–57
MBR1070 MBR1100 3–46 MBR390 MBR3100 3–57
MBR1080 MBR1100 3–46 MBR4045PT MBR4045PT 3–121
MBR1090 MBR1100 3–46 MBR4045WT MBR4045WT 3–131
MBR1100 MBR1100 3–46 MBR5025L MBR5025L 3–125
MBR12035CT MBRP20045CT 3–182 MBR60035CTL MBRP60035CTL 3–184
MBR12045CT MBRP20045CT 3–182 MBR6015L MBR6030L 3–160
MBR150 MBR160 3–43 MBR6030L MBR6030L 3–160

MBR1535CT MBR1545CT 3–64 MBR6035 MBR6045 3–164
MBR1545CT MBR1545CT 3–64 MBR6045 MBR6045 3–164
MBR160 MBR160 3–43 MBR6045PT MBR6045PT 3–123
MBR1635 MBR1645 3–92 MBR6045WT MBR6045WT 3–133
MBR1645 MBR1645 3–92 MBR6535 MBR6545 3–168
MBR170 MBR1100 3–46 MBR6545 MBR6545 3–168
MBR180 MBR1100 3–46 MBR735 MBR745 3–84
MBR190 MBR1100 3–46 MBR745 MBR745 3–84
MBR20015CTL MBRP20030CTL 3–181 MBR7535 MBR7545 3–172

MBR20035CT MBRP20045CT 3–182 MBRB1545CT MBRB1545CT 3–24
MBR20060CT MBRP20060CT 3–182 MBRB2515L MBRB2515L 3–32
MBR20100CT MBR20100CT 3–73 MBRB2535CTL MBRB2535CTL 3–34
MBR2015CTL MBR2030CTL 3–66 MBRB2545CT MBRB2545CT 3–36
MBR20200CT MBR20200CT 3–75 MBRD320 MBRD340 3–15
MBR2030CTL MBR2030CTL 3–66 MBRD330 MBRD340 3–15

MBR2070CT MBR20100CT 3–73 MBRD620CT MBRD640CT 3–18
MBR2535CTL MBR2535CTL 3–78 MBRD660CT MBRD660CT 3–18
MBR2545CT MBR2545CT 3–80 MBRF2535CT MBRF2545CT 3–109
MBR30035CT MBRP30045CT 3–183 MBRF2545CT MBRF2545CT 3–109

MBR30045CT MBRP30045CT 3–183 MBRS1100T3 MBRS1100T3 3–11
MBR30050CT MBRP30060CT 3–183 MBRS130LT3 MBRS130LT3 3–7
MBR30060CT MBRP30060CT 3–183 MBRS140T3 MBRS140T3 3–9
MBR3020CT MBR3045CT 3–178 MBRS340T3 MBRS340T3 3–13
MBR3035CT MBR3045CT 3–178 MR2500 MR2504 5–12
MBR3035PT MBR3045PT 3–119 MR2501 MR2504 5–12
MBR3035WT MBR3045WT 3–127 MR2502 MR2504 5–12
MBR3045CT MBR3045CT 3–178 MR2504 MR2504 5–12
MBR3045PT MBR3045PT 3–119 MR2506 MR2510 5–12

1–7
MR2508 MR2510 5–12 MUR20040CT MURP20040CT 4–116
MR2510 MR2510 5–12 MUR3005PT MUR3020PT 4–90
MR2535L MR2535L 5–19 MUR3010PT MUR3020PT 4–90
MR4422CT MR4422CT 5–18 MUR3015PT MUR3020PT 4–90
MR4422CTR MR4422CTR 5–18 MUR3020PT MUR3020PT 4–90
MR750 MR754 5–8 MUR3020WT MUR3020WT 4–85
MR751 MR754 5–8 MUR3030PT MUR3040PT 4–90
MR752 MR754 5–8 MUR3040 MUR3040 4–95
MR754 MR754 5–8 MUR3040PT MUR3040PT 4–90
MR756 MR760 5–8 MUR3040WT MUR3040WT 4–85
MR758 MR760 5–8 MUR3050PT MUR3060PT 4–90

MR760 MR760 5–8 MUR3060PT MUR3060PT 4–90
MR850 MR852 5–6 MUR3060WT MUR3060WT 4–85
MR851 MR852 5–6 MUR405 MUR420 4–31
MR852 MR852 5–6 MUR410 MUR420 4–31
MR854 MR856 5–6 MUR4100E MUR4100E 4–35
MR856 MR856 5–6 MUR415 MUR420 4–31
MUR10005CT MURP20020CT 4–116 MUR420 MUR420 4–31
MUR10020CT MURP20020CT 4–116 MUR470E MUR4100E 4–35

MUR10120E MUR10120E 4–65 MUR480E MUR4100E 4–35
MUR10150E MUR10150E 4–68 MUR490E MUR4100E 4–35
MUR105 MUR120 4–23 MUR5150E MUR5150E 4–54
MUR110 MUR120 4–23 MUR6020 MUR6040 4–98
MUR1100E MUR1100E 4–27 MUR6030 MUR6040 4–98
MUR115 MUR120 4–23 MUR6040 MUR6040 4–98
MUR120 MUR120 4–23 MUR605CT MUR620CT 4–39

MUR1505 MUR1520 4–71 MUR805 MUR820 4–56
MUR1510 MUR1520 4–71 MUR810 MUR820 4–56
MUR1515 MUR1520 4–71 MUR8100E MUR8100E 4–61
MUR1520 MUR1520 4–71 MUR815 MUR820 4–56
MUR1530 MUR1540 4–71 MUR820 MUR820 4–56
MUR1540 MUR1540 4–71 MUR830 MUR840 4–56
MUR1550 MUR1560 4–71 MUR840 MUR840 4–56
MUR1560 MUR1560 4–71 MUR850 MUR860 4–56
MUR160 MUR160 4–23 MUR860 MUR860 4–56
MUR1605CT MUR1620CT 4–46 MUR870E MUR8100E 4–61

MUR1605CTR MUR1620CTR 4–51 MUR880E MUR8100E 4–61
MUR1610CT MUR1620CT 4–46 MUR890E MUR8100E 4–61
MUR1610CTR MUR1620CTR 4–51 MURD305 MURD320 4–8
MUR1615CT MUR1620CT 4–46 MURD310 MURD320 4–8
MUR1615CTR MUR1620CTR 4–51 MURD315 MURD320 4–8
MUR1620CT MUR1620CT 4–46 MURD320 MURD320 4–8
MUR1620CTR MUR1620CTR 4–51 MURD605CT MURD620CT 4–11
MUR1630CT MUR1640CT 4–46 MURD610CT MURD620CT 4–11

MUR1660CT MUR1660CT 4–46 MURH840CT MURH840CT 4–11
MUR170E MUR1100E 4–27 MURH860CT MURH860CT 4–11
MUR180E MUR1100E 4–27 MURHB840CT MURHB840CT 4–14
MUR190E MUR1100E 4–27 MURS120T3 MURS120T3 4–2
MUR20005CT MURP20020CT 4–116 MURS160T3 MURS160T3 4–2
MUR20020CT MURP20020CT 4–116 P600A MR754 5–8
MUR20030CT MURP20040CT 4–116 P600B MR754 5–8

1–8
P600D MR754 5–8 RGP20J MR856 5–6
P600G MR754 5–8 RGP25A MR852 5–6
P600J MR760 5–8 RGP25B MR852 5–6
P600K MR760 5–8 RGP25D MR852 5–6
R710XPT MUR3020WT 4–85 RGP25G MR856 5–6
R711 MR4422CT 5–18 RGP25J MR856 5–6
R711A MR4422CTR 5–18 RGP30A MR852 5–6
R711X MUR3020WT 4–85 RGP30B MR852 5–6
R711XPT MUR3020WT 4–85 RGP30D MR852 5–6
R712X MUR3020WT 4–85 RGP30G MR856 5–6
R712XPT MUR3040WT 4–85 RGP30J MR856 5–6

R714X MUR3040WT 4–85 RGP80A MUR820 4–56
R714XPT MUR3020WT 4–85 RGP80B MUR820 4–56
RA2505 MR2504 5–12 RGP80D MUR820 4–56
RA251 MR2504 5–12 RGP80G MUR840 4–56
RA2510 MR2510 5–12 RGP80J MUR860 4–56
RA252 MR2504 5–12 RL061 1N4001 5–2
RA253 MR2504 5–12 RL062 1N4002 5–2
RA254 MR2504 5–12 RL063 1N4003 5–2
RA255 MR2510 5–12 RL064 1N4004 5–2
RA256 MR2510 5–12 RL065 1N4005 5–2

RA258 MR2510 5–12 RL066 1N4006 5–2
RG1A 1N4933 5–3 RL067 1N4007 5–2
RG1B 1N4934 5–3 RL251 1N5400 5–5
RG1D 1N4935 5–3 RL252 1N5401 5–5
RG1G 1N4936 5–3 RL253 1N5402 5–5
RG1J 1N4937 5–3 RL254 1N5404 5–5
RG2A MR852 5–6 RL255 1N5406 5–5
RG2B MR852 5–6 RL256 1N5406 5–5
RG2D MR852 5–6 RL257 1N5406 5–5
RG2G MR856 5–6 RP300A MR852 5–6

RG2J MR856 5–6 RP300B MR852 5–6
RG3A MR852 5–6 RP300D MR852 5–6
RG3B MR852 5–6 RP300G MR856 5–6
RG3D MR852 5–6 RP300J MR856 5–6
RG3G MR856 5–6 RUD810 MUR1620CT 4–46
RG3J MR856 5–6 RUD815 MUR1620CT 4–46
RG4A MR852 5–6 RUD820 MUR1620CT 4–46
RG4B MR852 5–6 RUR810 MUR820 4–56
RG4D MR852 5–6 RUR815 MUR820 4–56
RG4G MR856 5–6 RUR820 MUR820 4–56

RG4J MR856 5–6 RURD1610 MUR3020PT 4–90
RGM30A MUR3020PT 4–90 RURD1615 MUR3020PT 4–90
RGM30B MUR3020PT 4–90 RURD1620 MUR3020PT 4–90
RGM30D MUR3020PT 4–90 SB1020 MBR1045 3–86
RGM30G MUR3040PT 4–90 SB1035 MBR1045 3–86
RGP10A 1N4933 5–3 SB1040 MBR1045 3–86
RGP10B 1N4934 5–3 SB1045 MBR1045 3–86
RGP10D 1N4935 5–3 SB120 1N5817 3–38
RGP10G 1N4936 5–3 SB130 1N5818 3–38
RGP10J 1N4937 5–3 SB140 1N5819 3–38

RGP15A MR852 5–6 SB150 MBR160 3–43
RGP15B MR852 5–6 SB160 MBR160 3–43
RGP15D MR852 5–6 SB1620 MBR1545CT 3–64
RGP15G MR856 5–6 SB1630 MBR1545CT 3–64
RGP15J MR856 5–6 SB1640 MBR1545CT 3–64
RGP20A MR852 5–6 SB1645 MBR1545CT 3–64
RGP20B MR852 5–6 SB3020 MBR3045CT 3–178
RGP20D MR852 5–6 SB3030 MBR3045CT 3–178
RGP20G MR856 5–6 SB3040 MBR3045CT 3–178

1–9
SB3045 MBR3045CT 3–178 SBS840T MBR745 3–84
SB320 MBR340 3–53 SBS845T MBR745 3–84
SB330 MBR340 3–53 SBS850T MBR1060 3–90
SB340 MBR340 3–53 SBS860T MBR1060 3–90
SB350 MBR360 3–53 SBT3035 MBR3045CT 3–178
SB360 MBR360 3–53 SBT3040 MBR3045CT 3–178
SB520 1N5823 3–60 SBT3045 MBR3045CT 3–178
SB530 1N5824 3–60 SD241 SD241 3–178
SB540 1N5825 3–60 SD41 SD41 3–144
SB820 MBR745 3–84 SD41 SD41 3–144
SB830 MBR745 3–84 SD41 SD41 3–144

SB840 MBR745 3–84 SD51 SD51 3–156
SB845 MBR745 3–84 SES5001 MUR120 4–23
SB850 MBR1060 3–90 SES5002 MUR120 4–23
SB860 MBR1060 3–90 SES5003 MUR120 4–23
SBP1020T MBR1545CT 3–64 SES5301 MUR420 4–31
SBP1045T MBR1545CT 3–64 SES5401C MUR1620CT 4–46

SBR1040 MBR1045 3–86 SES5404C MUR1620CT 4–46
SBR1045 MBR1045 3–86 SES5501 MUR1520 4–71
SBR1050 MBR1060 3–90 SES5502 MUR1520 4–71
SBR1640 MBR1645 3–92 SES5503 MUR1520 4–71
SBR1645 MBR1645 3–92 SES5504 MUR1520 4–71
SBR2520 1N5832 3–152 SI231 MBR3045CT 3–178

SBR2530 1N5833 3–152 SI232 MBR3045CT 3–178
SBR3035 MBR3545 3–148 SI31 MBR3545 3–148
SBR3045 MBR3545 3–148 SI32 MBR3545 3–148
SBR3540 MBR3545 3–148 SI71 MBR7545 3–172
SBR3545 MBR3545 3–148 SR1002 MBR1045 3–86
SBR6025 MBR6045 3–164 SR1003 MBR1045 3–86
SBR8035 MBR8045 3–174 SR1004 MBR1045 3–86
SBR8040 MBR8045 3–174 SR1005 MBR1060 3–90
SBR8040 MBR8045 3–174 SR1006 MBR1060 3–90
SBR8045 MBR8045 3–174 SR102 MBR160 3–43

SBR8045 MBR8045 3–174 SR103 MBR160 3–43
SBS1020T MBR1045 3–86 SR104 MBR160 3–43
SBS1030T MBR1045 3–86 SR105 MBR160 3–43
SBS1035T MBR1045 3–86 SR106 MBR160 3–43
SBS1040T MBR1045 3–86 SR1602 MBR1545CT 3–64
SBS1045T MBR1045 3–86 SR1603 MBR1545CT 3–64
SBS1620T MBR1645 3–92 SR1604 MBR1545CT 3–64
SBS1630T MBR1645 3–92 SR302 MBR340 3–53
SBS1635T MBR1645 3–92 SR303 MBR340 3–53
SBS1640T MBR1645 3–92 SR304 MBR340 3–53

SBS1645T MBR1645 3–92 SR305 MBR360 3–53
SBS520T MBR745 3–84 SR306 MBR360 3–53
SBS530T MBR745 3–84 SR802 MBR745 3–84
SBS535T MBR745 3–84 SR803 MBR745 3–84
SBS540T MBR745 3–84 SR804 MBR745 3–84
SBS545T MBR745 3–84 SRP100A 1N4933 5–3
SBS820T MBR745 3–84 SRP100B 1N4934 5–3
SBS830T MBR745 3–84 SRP100D 1N4935 5–3
SBS835T MBR745 3–84 SRP100G 1N4936 5–3

1–10
SRP100J 1N4937 5–3 USD535 MBR8045 3–174
SRP300A MR852 5–6 USD545 MBR8045 3–174
SRP300B MR852 5–6 USD550 MBR8045 3–174
SRP300D MR852 5–6 USD620 MBR745 3–84
SRP300G MR856 5–6 USD620C MBR1545CT 3–64
SRP300J MR856 5–6 USD635 MBR745 3–84
TG26 MUR460 4–31 USD635C MBR1545CT 3–64
TG284 MUR1640CT 4–46 USD640 MBR745 3–84
TG286 MUR1660CT 4–46 USD640C MBR1545CT 3–64
TG288 MUR1660CT 4–46 USD645 MBR745 3–84
TG4 MUR140 4–23 USD645C MBR1545CT 3–64

TG6 MUR160 4–23 USD720 MBR1045 3–86
TG84 MUR840 4–56 USD720C MBR1545CT 3–64
TG86 MUR860 4–56 USD735 MBR1045 3–86
UES1001 MUR120 4–23 USD735C MBR1545CT 3–64
UES1002 MUR120 4–23 USD740 MBR1045 3–86
UES1101 MUR120 4–23 USD745 MBR1045 3–86
UES1103 MUR120 4–23 USD820 MBR1645 3–92
UES1104 MUR120 4–23 USD835 MBR1645 3–92

UES1105 MUR140 4–23 USD840 MBR1645 3–92
UES1106 MUR140 4–23 USD845 MBR1645 3–92
UES1301 MUR420 4–31 USD920 MBR1645 3–92
UES1302 MUR420 4–31 USD935 MBR1645 3–92
UES1303 MUR420 4–31 USD940 MBR1645 3–92
UES1304 MUR420 4–31 USD945 MBR1645 3–92
UES1401 MUR820 4–56 UT234 1N4003 5–2
UES1402 MUR820 4–56 UT235 1N4004 5–2
UES1403 MUR820 4–56 UT236 1N4002 5–2
UES1404 MUR820 4–56 UT237 1N4005 5–2

UES1420 MUR860 4–56 UT238 1N4005 5–2
UES1501 MUR1520 4–71 UT242 1N4003 5–2
UES1502 MUR1520 4–71 UT244 1N4004 5–2
UES1503 MUR1520 4–71 UT245 1N4005 5–2
UES1504 MUR1520 4–71 UT247 1N4005 5–2
UES2401 MUR1620CT 4–46 UT249 1N4002 5–2
UES2402 MUR1620CT 4–46 UT251 1N4002 5–2
UES2403 MUR1620CT 4–46 UT252 1N4003 5–2
UES2404 MUR1620CT 4–46 UT254 1N4004 5–2
UES2601 MUR3020PT 4–90 UT255 1N4005 5–2

UES2602 MUR3020PT 4–90 UT257 1N4005 5–2
UES2603 MUR3020PT 4–90 UT258 1N4006 5–2
UES2604 MUR3020PT 4–90 UT347 1N4007 5–2
UES2605 MUR3040PT 4–90 UT361 1N4006 5–2
UES2606 MUR3040PT 4–90 UT362 1N4006 5–2
UF4001 MUR120 4–23 UT363 1N4007 5–2
UF4002 MUR120 4–23 UT364 1N4007 5–2
UF4003 MUR120 4–23 UTR01 1N4933 5–3
UF4004 MUR140 4–23 UTR02 1N4933 5–3
UF5400 MUR420 4–31 UTR10 1N4934 5–3

UF5401 MUR420 4–31 UTR11 1N4934 5–3
UF5402 MUR420 4–31 UTR12 1N4934 5–3
USD1120 MBR160 3–43 UTR20 1N4935 5–3
USD1130 MBR160 3–43 UTR21 1N4935 5–3
USD1140 MBR160 3–43 UTR22 1N4935 5–3
USD320C MBR3045CT 3–178 UTR2305 MR852 5–6
USD335C MBR3045CT 3–178 UTR2310 MR852 5–6
USD345C MBR3045CT 3–178 UTR2320 MR852 5–6
USD520 MBR8045 3–174 UTR2340 MR856 5–6

1–11
UTR2350 MR856 5–6 VHE1401 MUR820 4–56
UTR2360 MR856 5–6 VHE1402 MUR820 4–56
UTR30 1N4936 5–3 VHE1403 MUR820 4–56
UTR31 1N4936 5–3 VHE1404 MUR820 4–56
UTR32 1N4936 5–3 VHE205 MUR120 4–23
UTR3305 MR852 5–6 VHE210 MUR120 4–23
UTR3310 MR852 5–6 VHE215 MUR120 4–23
UTR3320 MR852 5–6 VHE220 MUR120 4–23
UTR3340 MR856 5–6 VHE2401 MUR1620CT 4–46
UTR3350 MR856 5–6 VHE2402 MUR1620CT 4–46
UTR3360 MR856 5–6 VHE2403 MUR1620CT 4–46

UTR40 1N4936 5–3 VHE2404 MUR1620CT 4–46
UTR41 1N4936 5–3 VHE605 MUR420 4–31
UTR42 1N4936 5–3 VHE610 MUR420 4–31
UTR4305 MR852 5–6 VHE615 MUR420 4–31
UTR4310 MR852 5–6 VHE620 MUR420 4–31
UTR4320 MR852 5–6 VSK1020 MBR1045 3–86
UTR4340 MR852 5–6 VSK1035 MBR1045 3–86
UTR4350 MR856 5–6 VSK1045 MBR1045 3–86
UTR4360 MR856 5–6 VSK12 MBR1545CT 3–64
UTR50 1N4937 5–3 VSK120 1N5817 3–38

UTR51 1N4937 5–3 VSK13 MBR1545CT 3–64
UTR52 1N4937 5–3 VSK130 1N5818 3–38
UTR60 1N4937 5–3 VSK14 MBR1545CT 3–64
UTR61 1N4937 5–3 VSK140 1N5819 3–38
UTR62 1N4937 5–3 VSK1520 1N5829 3–139
UTX105 1N4933 5–3 VSK1530 1N5830 3–139
UTX110 1N4934 5–3 VSK1540 1N5831 3–139
UTX115 1N4935 5–3 VSK2004 MBRP20060CT 3–182
UTX120 1N4935 5–3 VSK2020 MBR2045CT 3–69
UTX125 1N4935 5–3 VSK2035 MBR2045CT 3–69

UTX205 1N4933 5–3 VSK2045 MBR2045CT 3–69
UTX210 1N4934 5–3 VSK2420 MBR2545CT 3–80
UTX215 1N4935 5–3 VSK2435 MBR2545CT 3–80
UTX220 1N4935 5–3 VSK2445 MBR2545CT 3–80
UTX225 1N4935 5–3 VSK3020S MBR3545 3–148
UTX3105 MR852 5–6 VSK3020T MBR3045CT 3–178
UTX3110 MR852 5–6 VSK3030S MBR3545 3–148
UTX3115 MR852 5–6 VSK3030T MBR3045CT 3–178
UTX3120 MR852 5–6 VSK3040S MBR3545 3–148
UTX4105 MR852 5–6 VSK3040T MBR3045CT 3–178

UTX4110 MR852 5–6 VSK32 MBR3545 3–148
UTX4115 MR852 5–6 VSK320 MBR340 3–53
UTX4120 MR852 5–6 VSK330 MBR340 3–53
V322 1N5402 5–5 VSK340 MBR340 3–53
V324 1N5404 5–5 VSK4020 1N5832 3–152
V326 1N5406 5–5 VSK4030 1N5833 3–152
V330X MR852 5–6 VSK4040 1N5834 3–152
V331X MR852 5–6 VSK41 SD41 3–144
V332X MR852 5–6 VSK51 SD51 3–156
V334X MR856 5–6 VSK62 MBR745 3–84

V336X MR856 5–6 VSK63 MBR745 3–84
V342 1N5402 5–5 VSK64 MBR745 3–84
V344 1N5404 5–5 VSK920 MBR1545CT 3–64
V346 1N5406 5–5 VSK935 MBR1545CT 3–64
V350X MR852 5–6 VSK945 MBR1545CT 3–64
V351X MR852 5–6
V352X MR852 5–6
V354X MR856 5–6
V356X MR856 5–6

1–12
Section 2
Selector Guide
In Brief . . .
Continuing investment in research and development for Page
discrete products has created a rectifier manufacturing Rectifier Numbering System . . . . . . . . . . . . . . . . . . . . . . 2–2
facility that matches the precision and versatility of the most Application Specific Rectifiers . . . . . . . . . . . . . . . . . . . . . 2–3
advanced integrated circuits. As a result, Motorola’s silicon Low VF Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–3
rectifiers span all high tech applications with quality levels MEGAHERTZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–3
capable of passing the most stringent environmental tests SCANSWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–3
. . . including those for automotive under–hood applications. Automotive Transient Suppressors . . . . . . . . . . . . . . 2–3
SWITCHMODE Rectifiers . . . . . . . . . . . . . . . . . . . . . . . 2–4
Product Highlights:
Surface Mount Schottky . . . . . . . . . . . . . . . . . . . . . . . 2–4
• Surface Mount Devices — A major thrust has been the Axial Lead Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–6
development and introduction of a broad range of TO–220 Type Schottky . . . . . . . . . . . . . . . . . . . . . . . . 2–7
power rectifiers, Schottky and Ultrafast, 1/2 amp to TO–218 Types and TO–247 Schottky . . . . . . . . . . . . 2–8
25 amp, 15 to 600 volts. TO–204AA, DO–203AA and DO–203AB
• Application Specific Rectifiers — Schottky Metal Packages . . . . . . . . . . . . . . . . . . . . 2–9
— MEGAHERTZ  series for high frequency power POWERTAP II and SOT–227B Schottky . . . . . . . . 2–10
— supplies and power factor correction. Ultrafast Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–11
— Schottky rectifiers having lower forward voltage drop Surface Mount Ultrafast . . . . . . . . . . . . . . . . . . . . . . . 2–11
— (0.3 to 0.6 volts) for use in low voltage SMPS Axial Lead Ultrafast . . . . . . . . . . . . . . . . . . . . . . . . . . 2–11
— outputs and as “OR”ing diodes. TO–220 Type Ultrafast . . . . . . . . . . . . . . . . . . . . . . . 2–12
— Automotive transient suppressors. TO–218 Types and TO–247 Ultrafast . . . . . . . . . . . 2–13
• Ultrafast rectifiers having reverse recovery times as low POWERTAP II and SOT–227B Ultrafast . . . . . . . . 2–13
as 25 ns to complement the Schottky devices for higher Fast Recovery Rectifiers/General
voltage requirements in high frequency applications. Purpose Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–14
• A wide variety of package options to match virtually any
potential requirement.
The rectifier selector section that follows has generally
been arranged by package and technology. The individual
tables have been sorted by voltage and current with the
package types for the devices listed shown above each
table. The Application Specific Rectifiers are also included in
their respective tables.
Motorola’s commitment to Six–Sigma is showing its
worth. Refined processes no longer produce fallout as such
and therefore only Motorola Preferred Devices are listed in
the tables. The non–preferred devices will continue to be
offered, but customers are encouraged to begin designing
using the preferred types.
Rectifier Device Data Selector Guide

2–1
RECTIFIER NUMBERING SYSTEM
PART NUMBER KEY XXX X XX XX XX X

R = REVERSE
PREFIX IO VR L = LOW VF
(TYPE DESIGNATOR) (X10 EXCEPT
E = ENERGY
F = FULLY ISOLATED SCHOTTKY)
S = SURFACE MT (SMB/SMC) SUFFIX
(DUAL DESIGNATOR)
D = DPAK
B = D2PAK
H = MEGAHERTZ
PREFIX KEY MUR = MOTOROLA ULTRA FAST RECTIFIER

MBR = MOTOROLA (SCHOTTKY) BARRIER RECTIFIER
MR = MOTOROLA STANDARD & FAST RECOVERY
SUFFIX KEY CT = CENTER TAP (DUAL) TO–220, TO–3, POWERTAP
PT = CENTER TAP (DUAL) TO–218 PACKAGE
WT = CENTER TAP (DUAL) TO–247 / TO–3P
EXAMPLE: MUR 30 20 WT
MOTOROLA ULTRAFAST 30 AMP 200 V CENTER TAP (DUAL)
TO–247
EXAMPLE: MBR 30 45 WT
MOTOROLA SCHOTTKY 30 AMP 45 V CENTER TAP (DUAL)
TO–247
Selector Guide Rectifier Device Data

2–2
Application Specific Rectifiers
The focus for Rectifier Products continues to be on mainframe supplies. Our new product thrust is intended to be
Schottky and Ultrafast technologies, with process and more “application specific” than in the past, while continuing
packaging improvements to achieve greater efficiency in high to strive for broad market acceptance.
frequency switching power supplies, and high current
Table 1. Low VF Schottky Rectifiers
State of the art geometry is used in low VF Schottky devices for improved efficiency in low voltage, high frequency switching
power supplies, free–wheeling diodes, polarity protection diodes and “OR”ing diodes.
VF @ Rated IO
IO VRRM and Temperature IR @ Rated VRRM
Device Amps (Volts) Volts (Max) mAmps (Max) Package Page
MBR0520LT1 0.5 20 0.33 0.25 SOD-123 3–2
MBRS130LT3 1 30 0.395 1 SMB 3–7
MBRD835L 8 35 0.41 1.4 DPAK 3–21
MBRD1035CTL 10 35 0.41 6 DPAK —
MBR2030CTL 20 30 0.48 5 TO-220 3–66
MBRB2535CTL 25 35 0.41 10 D2PAK 3–34
MBR2535CTL 25 35 0.41 5 TO-220 3–78
MBRB2515L 25 15 0.42 15 D2PAK 3–32
MBR2515L 25 15 0.42 15 TO-220 3–77
MBRB3030CTL 30 30 0.58 5 D2PAK —
MBR4015LWT 40 15 0.42 5 TO-247 3–129
MBR5025L 50 25 0.58 0.5 TO-218 TYPE 3–125
MBR6030L 60 30 0.38 50 DO-203AB 3–160
MBRP20030CTL 200 30 0.39 5 POWERTAP 3–181
MBRP60035CTL 600 35 0.50 10 POWERTAP 3–184
Table 2. MEGAHERTZ Rectifiers

MEGAHERTZ Series — This group of ultrafast rectifiers is designed to provide improved efficiency in very high frequency
switching power supplies and for use in power factor correction circuits.
Maximum
VF @ Rated IR @ Rated
IO VRRM IO and Temp. VRRM trr
Device Amps (Volts) (Volts) (mAmps) (Nanosecond) Page
MURH840CT 8 400 1.7 0.01 28 4–41
MURH860CT 8 600 2.0 0.01 28 4–44
Table 3. SCANSWITCH Rectifiers

These ultrafast rectifiers are designed for improved performance in very high resolution monitors and work stations where
forward recovery time (tfr) and high voltage (1200 – 1500 volts) are primary considerations.
Maximum
IO VRRM tfr trr VRFM (6)
Device Amps (Volts) (Nanoseconds) (Nanoseconds) (Volts) Page
MUR5150E 5 1500 225 175 20 4–54
MUR880E 8 800 — 75 — —
MUR10120E 10 1200 175 175 14 4–65
MUR10150E 10 1500 175 175 16 4–68
Table 4. Automotive Transient Suppressors

Automotive transient suppressors are designed for protection against over–voltage conditions in the auto electrical system
including the “LOAD DUMP” phenomenon that occurs when the battery open circuits while the car is running.
IO VRRM V(BR) IRSM(7) T
Device Amps (Volts) (Volts) (Amps) (°C) Page
MR2535L 35 20 24 – 32 110 175 5–19
(6)V
RFM = Maximum Transient Overshoot Voltage.
(7)Time constant = 10 ms, Duty Cycle ≤ 1%, T = 25°C.
C
Devices listed in bold, italic are Motorola preferred devices.

2–3
SWITCHMODE Rectifiers
Schottky power rectifiers with the high speed and low Motorola representative for more information.
forward voltage drop characteristic of Schottky’s metal/silicon There are many other standard features in Motorola
junctions are produced with ruggedness and temperature Schottky rectifiers that give added performance and reliability.
performance comparable to silicon–junction rectifiers. Ideal
for use in low–voltage, high–frequency power supplies, and as 1. GUARDRINGS were pioneered by Motorola and are
very fast clamping diodes, these devices feature switching included in all Schottky die for reverse voltage stress
times less than 10 ns, and are offered in current ranges from protection from high rates of dv/dt to virtually eliminate the
0.5 to 600 amperes, and reverse voltages to 200 volts. need for snubber networks. The guardring also operates like
In some current ranges, devices are available with junction a zener and avalanches when subjected to voltage transients.
temperature specifications of 125°C, 150°C and 175°C. 2. MOLYBDENUM DISCS on both sides of the die mini-
Devices with higher TJ ratings can have significantly lower mize fatigue from power cycling in all metal products. Plastic
leakage currents, but higher forward–voltage specifications. encapsulated devices have a special solder formulation for
These parameter tradeoffs should be considered when the same purpose.
selecting devices for applications that can be satisfied by more 3. QUALITY CONTROL monitors all critical fabrication
than one device type number. operations and performs selected stress tests to assure
All devices are connected cathode–to–case or constant processes. Motorola’s commitment to six sigma has
cathode–to–heatsink, where applicable. Contact your provided significant quality improvement.
Case 425 Case 403A Case 403

SOD–123 SMB SMC
Cathode = Notch Cathode = Notch Cathode = Notch
Table 5. Surface Mount Schottky Rectifiers

Max VF @ iF
VRRM IO(1) IO Rating TC = 25°C IFSM TJ Max
(Volts) (Amperes) Condition Device (Volts) (Amperes) (°C) Package Page
20 0.5 TL = 105°C MBR0520LT1 K 0.310 @ 0.1 A 5 125 SOD-123 3–2
0.385 @ 0.5 A
30 0.5 TL = 105°C MBR0530 T1 K 0.375 @ 0.1 A 5 125 SOD-123 3–4
0.430 @ 0.5 A
40 0.5 TL = 110°C MBR0540 T1 K 0.53 @ 0.5 A 20 150 SOD-123 3–6
30 1 TL = 120°C MBRS130LT3 0.395 @ 1.0 A 40 125 SMB 3–7
40 1 TL = 115°C MBRS140T3 0.6 @ 1.0 A 40 125 SMB 3–9
100 1 TL = 120°C MBRS1100T3 0.75 @ 1.0 A 40 150 SMB 3–11
40 3 TL = 100°C MBRS340T3 0.525 @ 3.0 A 80 125 SMC 3–13
60 3 TL = 100°C MBRS360T3 K 0.74 @ 3.0 A 80 125 SMC 3–13
(1) IO is total device current capability.
K New Product

2–4
Case 369A Case 418B
DPAK D2PAK 1
Style 3 Style 3 “CT” Suffix: 4
3
4
1
4 4
Non–“CT” Suffix:
1 3
1
3 3
Table 5. Surface Mount Schottky Rectifiers (continued)

Max VF @ iF
(Volts) (Amperes) Condition Device (Volts) (Amperes) (°C) Package Page
40 3 TC = 125°C MBRD340 0.60 @ 3.0 A 75 150 DPAK 3–15
60 3 TC = 125°C MBRD360 0.60 @ 3.0 A 75 150 DPAK 3–15
40 6 TC = 130°C MBRD640CT 0.70 @ 3.0 A 75 150 DPAK 3–18
60 6 TC = 130°C MBRD660CT 0.70 @ 3.0 A 75 150 DPAK 3–18
35 8 TC = 100°C MBRD835L K 0.40 @ 3.0 A 100 125 DPAK 3–21
0.51 @ 8.0 A
35 10 TC = 90°C MBRD1035CTL K 0.49 @ 10 A 100 125 DPAK —
45 15 TC = 105°C MBRB1545CT 0.84 @ 15 A 150 150 D2PAK 3–24
60 20 TC = 110°C MBRB2060CT 0.95 @ 20 A 150 150 D2PAK 3–26
100 20 TC = 110°C MBRB20100CT 0.85 @ 10 A 150 150 D2PAK 3–28
0.95 @ 20 A
200 20 TC = 125°C MBRB20200CT K 1.0 @ 20 A 150 150 D2PAK 3–30
15 25 TC = 90°C MBRB2515L K 0.45 @ 25 A 150 100 D2PAK 3–32
35 25 TC = 110°C MBRB2535CTL 0.47 @ 12.5 A 150 125 D2PAK 3–34
0.55 @ 25 A
45 25 TC = 130°C MBRB2545CT 0.82 @ 30 A 150 150 D2PAK 3–36
30 30 TC = 115°C MBRB3030CT K 0.51 @ 15 A 300 150 D2PAK 3–190
0.62 @ 30 A
30 30 TC = 95°C MBRB3030CTL K 0.45 @ 15 A 150 125 D2PAK —
0.51 @ 30 A
30 40 TC = 110°C MBRB4030 K 0.46 @ 20 A 300 150 D2PAK 3–193
0.55 @ 40 A
K New Product

2–5
Case 59–04 Case 267–03 Case 60–01
Plastic Plastic Metal
Style 1
Cathode = Polarity Band Cathode = Polarity Band
Table 6. Axial Lead Schottky Rectifiers

Max VF @ iF
VRRM IO IO Rating TC = 25°C IFSM TJ Max
(Volts) (Amperes) Condition Device (Volts) (Amperes) (°C) Case Page
20 1 TA = 55°C 1N5817 0.45 @ 1.0 A 25 125 59-04 3–38
RθJA = 80°C/W
30 1 TA = 55°C 1N5818 0.55 @ 1.0 A 25 125 59-04 3–38
RθJA = 80°C/W
40 1 TA = 55°C 1N5819 0.60 @ 1.0 A 25 125 59-04 3–38
RθJA = 80°C/W
60 1 TA = 55°C MBR160 0.75 @ 1.0 A 25 150 59-04 3–43
RθJA = 80°C/W
100 1 TA = 120°C MBR1100 0.79 @ 1.0 A 50 150 59-04 3–46
RθJA = 50°C/W
20 3 TA = 76°C 1N5820 0.457 @ 3.0 A 80 125 267-03 3–49
RθJA = 28°C/W
30 3 TA = 71°C 1N5821 0.500 @ 3.0 A 80 125 267-03 3–49
RθJA = 28°C/W
40 3 TA = 61°C 1N5822 0.525 @ 3.0 A 80 125 267-03 3–49
RθJA = 28°C/W
40 3 TA = 65°C MBR340 0.600 @ 3.0 A 80 150 267-03 3–53
RθJA = 28°C/W
60 3 TA = 65°C MBR360 0.740 @ 3.0 A 80 150 267-03 3–53
RθJA = 28°C/W
100 3 TA = 100°C MBR3100 0.79 @ 3.0 A 150 150 267-03 3–57
RθJA = 28°C/W
20 5 TA = 30°C 1N5823 0.360 @ 5.0 A 500 125 60-01 3–60
RθJA = 25°C/W
30 5 TA = 40°C 1N5824 0.370 @ 5.0 A 500 125 60-01 3–60
RθJA = 25°C/W
40 5 TA = 45°C 1N5825 0.380 @ 5.0 A 500 125 60-01 3–60
RθJA = 25°C/W

2–6
Case 221B Case 221A–06 Case 221E Case 221D
(TO–220AC) (TO–220AB)
1 1
2, 4 4 2
3 STYLE 1: 3
4 STYLE 1:
PIN 1. CATHODE STYLE 6: PIN 1. CATHODE STYLE 3:
2. N/A PIN 1. ANODE 2. N/A PIN 1. ANODE
3. ANODE 2. CATHODE 3. ANODE 2. CATHODE
4. CATHODE 3. ANODE 3. ANODE
4. CATHODE
1
2 1
1 3 1 2
3 3
2
Table 7. TO–220 Type Schottky Rectifiers
Max VF @ iF
45 15 TC = 105°C MBR1545CT 0.84 @ 15 A 150 150 221A-06 3–64
30 20 TC = 137°C MBR2030CTL K 0.52 @ 10 A 150 150 221A-06 3–66
0.58 @ 20 A
45 20 TC = 135°C MBR2045CT 0.84 @ 20 A 150 150 221A-06 3–69
60 20 TC = 133°C MBR2060CT 0.85 @ 10 A 150 150 221A-06 3–73
0.95 @ 20 A
100 20 TC = 133°C MBR20100CT 0.85 @ 10 A 150 150 221A-06 3–73
0.95 @ 20 A
200 20 TC = 125°C MBR20200CT 1.0 @ 20 A 150 150 221A-06 3–75
15 25 TC = 90°C MBR2515L K 0.45 @ 25 A 150 100 221A-06 3–77
35 25 TC = 95°C MBR2535CTL K 0.55 @ 25 A 150 125 221A-06 3–78
45 25 TC = 130°C MBR2545CT 0.82 @ 30 A 150 150 221A-06 3–80
45 30 TC = 130°C MBR3045ST K 0.76 @ 30 A 150 150 221A-06 3–82
45 7.5 TC = 105°C MBR745 0.84 @ 15 A 150 150 221B 3–84
45 10 TC = 135°C MBR1045 0.84 @ 20 A 150 150 221B 3–86
60 10 TC = 133°C MBR1060 0.80 @ 10 A 150 150 221B 3–90
100 10 TC = 133°C MBR10100 0.80 @ 10 A 150 150 221B 3–90
45 16 TC = 125°C MBR1645 0.63 @ 16 A 150 150 221B 3–92
45 15 TC = 105°C MBRF1545CT K 0.84 @ 15 A 150 150 ISOLATED 3–94
221D
221D
221D
221D
221D
221D
45 7.5 TC = 105°C MBRF745 K 0.84 @ 15 A 150 150 ISOLATED 3–112
221E
45 10 TC = 135°C MBRF1045 K 0.84 @ 20 A 150 150 ISOLATED 3–115
221E
Indicates UL Recognized — File #E69369
K New Product

2–7
Case 340D Case 340E Case 340F
(TO–218AC) (TO–218) (TO–247)
1 1
2, 4 4 STYLE 1: 2, 4
4 STYLE 2: STYLE 2:
3 PIN 1. ANODE 1 PIN 1. CATHODE 3
3. ANODE PIN 1. ANODE 1
2. CATHODES 2. CATHODES
3. ANODE 2 4. CATHODE
3. ANODE 2
(BACK HEATSINK)
1
1 1 2
2
3 3 3
Table 8. TO–218 Types and TO–247 Schottky Rectifiers

Max VF @ iF
45 30 TC = 105°C MBR3045PT 0.76 @ 30 A 200 150 340D 3–119
45 40 TC = 125°C MBR4045PT 0.70 @ 20 A 400 150 340D 3–121
0.80 @ 40 A
45 60 TC = 125°C MBR6045PT K 0.62 @ 30 A 500 150 340D 3–123
0.75 @ 60 A
25 50 TC = 125°C MBR5025L K 0.54 @ 30 A 300 150 340E 3–125
0.62 @ 50 A
45 30 TC = 105°C MBR3045WT 0.76 @ 30 A 200 150 340F 3–127
15 40 TC = 125°C MBR4015LWT 0.42 @ 20 A 400 150 340F 3–129
K 0.50 @ 40 A
45 40 TC = 125°C MBR4045WT 0.70 @ 20 A 400 150 340F 3–131
0.80 @ 40 A
45 60 TC = 125°C MBR6045WT K 0.62 @ 30 A 500 150 340F 3–133
0.75 @ 60 A
K New Product

2–8
Case 56 Case 257 Case 11–03
(DO–203AA) (DO–203AB) (TO–204AA)
STYLE 2: 1 STYLE 2:
1 PIN 1. ANODE PIN 1. ANODE STYLE 4:
2. CATHODE (CASE) 2. CATHODE (CASE) PIN 1. ANODE #1
2. ANODE #2
CASE. COMMON CATHODE
2
1
2
2
Table 9. TO–204AA (formerly TO–3), DO–203AA and DO–203AB (formerly DO–4 and DO–5)
Schottky Rectifier Metal Packages DEVICES NOT RECOMMENDED FOR NEW DESIGN
Max VF @ iF
20 15 TC = 85°C 1N5826 0.44 @ 15 A 500 125 56 3–135
(VR = 4 V)
30 15 TC = 85°C 1N5827 0.47 @ 15 A 500 125 56 3–135
(VR = 6 V)
40 15 TC = 85°C 1N5828 0.50 @ 15 A 500 125 56 3–135
(VR = 8 V)
20 25 TC = 85°C 1N5829 0.44 @ 25 A 800 125 56 3–139
(VR = 4 V)
30 25 TC = 85°C 1N5830 0.46 @ 25 A 800 125 56 3–139
(VR = 6 V)
40 25 TC = 85°C 1N5831 0.48 @ 25 A 800 125 56 3–139
(VR = 8 V)
30 25 TC = 70°C 1N6095 0.86 @ 78.5 A 400 125 56 3–144
TC = 70°C
40 25 TC = 70°C 1N6096 0.86 @ 78.5 A 400 125 56 3–144
TC = 70°C
45 30 TC = 105°C SD41 0.55 @ 78.5 A 600 150 56 3–144
TC = 125°C
45 35 TC = 110°C MBR3545 0.63 @ 35 A 600 150 56 3–148
20 40 TC = 75°C 1N5832 0.052 @ 40 A 800 125 257 3–152
(VR = 4 V)
30 40 TC = 75°C 1N5833 0.55 @ 40 A 800 125 257 3–152
(VR = 6 V)
40 40 TC = 75°C 1N5834 0.59 @ 40 A 800 125 257 3–152
(VR = 8 V)
30 50 TC = 70°C 1N6097 0.86 @ 157 A 800 125 257 3–156
TC = 70°C
40 50 TC = 70°C 1N6098 0.86 @ 157 A 800 125 257 3–156
TC = 70°C
30 60 TC = 120°C MBR6030L 0.42 @ 30 A 1000 150 257 3–160
0.48 @ 60 A
45 60 TC = 90°C SD51 0.70 @ 60 A 800 150 257 3–156
45 60 TC = 100°C MBR6045 0.70 @ 60 A 800 150 257 3–164
45 65 TC = 120°C MBR6545 0.78 @ 65 A 800 175 257 3–168
45 75 TC = 90°C MBR7545 0.60 @ 60 A 1000 150 257 3–172
TC = 125°C
45 80 TC = 120°C MBR8045 0.72 @ 80 A 1000 175 257 3–174
45 30 TC = 105°C MBR3045CT 0.76 @ 30 A 400 150 11-03 3–178
45 30 TC = 105°C SD241 0.60 @ 20 A 400 150 11-03 3–178
TC = 125°C

2–9
Case 357C SOT–227B
POWERTAP
4
1 3
1 2
4 3
Cathode = Mounting Plate
Anode = Terminal STYLE 2
Table 10. POWERTAP II and SOT–227B Schottky Rectifiers

Max VF @ iF
30 200 TC = 125°C MBRP20030CTL K 0.52 @ 100 A 1500 150 357C 3–181
0.60 @ 200 A
45 200 TC = 125°C MBRP20045CT K 0.78 @ 100 A 1500 175 357C 3–182
60 200 TC = 125°C MBRP20060CT K 0.800 @ 100 A 1500 175 357C 3–182
45 300 TC = 120°C MBRP30045CT K 0.70 @ 150 A 2500 175 357C 3–183
0.82 @ 300 A
60 300 TC = 120°C MBRP30060CT K 0.79 @ 150 A 2500 175 357C 3–183
0.89 @ 300 A
35 600 TC = 100°C MBRP60035CTL K 0.57 @ 300 A 4000 150 357C 3–184
100 80 TC = 125°C MBR240100V K 0.95 @ 40 A 600 150 SOT-227B 3–185
Style 2
60 100 TC = 125°C MBR25060V K 0.65 @ 50 A 800 150 SOT-227B 3–187
Style 2
45 160 TC = 125°C MBR28045V K 0.80 @ 80 A 900 150 SOT-227B 3–188
1.0 @ 160 A Style 2
All POWERTAP devices are being converted to the new, more rugged, POWERTAP II configuration beginning January 1994. Contact your Motorola
representative for more details.
All SOT–227B devices have 2500 volts isolation between the heatsink and active elements.
K New Product

2–10
Ultrafast Rectifiers
Case 403A Case 403 Case 369A Case 418B
SMB SMC DPAK D2PAK 1
Style 3 Style 3 “CT” Suffix: 4
3
4
1
4 4
Non–“CT” Suffix:
1 3
1
Cathode = Notch Cathode = Notch 3 3
Table 11. Surface Mount Ultrafast Rectifiers

Max VF @ iF
VRRM IO(1) IO Rating Max trr TC = 25°C IFSM TJ Max
(Volts) (Amperes) Condition Device (ns) (Volts) (Amperes) (°C) Package Page
200 1 TL = 155°C MURS120T3 35 0.875 @ 1.0 A 40 175 SMB 4–2
600 1 TL = 150°C MURS160T3 75 1.25 @ 1.0 A 35 175 SMB 4–2
200 3 TL = 140°C MURS320T3 35 0.875 @ 3.0 A 75 175 SMC 4–5
600 3 TL = 130°C MURS360T3 75 1.25 @ 3.0 A 75 175 SMC 4–5
200 3 TL = 158°C MURD320 35 0.95 @ 3.0 A 75 175 DPAK 4–8
200 6 TL = 145°C MURD620CT 35 1.0 @ 3.0 A 63 175 DPAK 4–11
400 8 TL = 120°C MURHB840CT K 28 2.2 @ 4.0 A 100 175 D2PAK 4–14
200 16 TL = 150°C MURB1620CT 35 0.975 @ 8.0 A 100 175 D2PAK 4–17
600 16 TL = 150°C MURB1660CT 60 1.5 @ 8.0 A 100 175 D2PAK 4–20
K New Product
Case 59–04 Case 267–03

Plastic Plastic
Cathode = Polarity Band Cathode = Polarity Band
Table 12. Axial Lead Ultrafast Rectifiers

Max VF @ iF
VRRM IO IO Rating Max trr TC = 25°C IFSM TJ Max
(Volts) (Amperes) Condition Device (ns) (Volts) (Amperes) (°C) Case Page
200 1 TA = 130°C MUR120 25 0.875 @ 1.0 A 35 175 59-04 4–23
RθJA = 50°C/W
400 1 TA = 120°C MUR140 50 1.25 @ 1.0 A 35 175 59-04 4–23
RθJA = 50°C/W
600 1 TA = 120°C MUR160 50 1.25 @ 1.0 A 35 175 59-04 4–23
RθJA = 50°C/W
1000 1 TA = 95°C MUR1100E 75 1.75 @ 1.0 A 35 175 59-04 4–27
RθJA = 50°C/W
200 4 TA = 80°C MUR420 25 0.875 @ 3.0 A 125 175 267-03 4–31
RθJA = 28°C/W
400 4 TA = 40°C MUR440 50 1.25 @ 3.0 A 70 175 267-03 —
RθJA = 28°C/W
600 4 TA = 40°C MUR460 50 1.25 @ 3.0 A 70 175 267-03 4–31
RθJA = 28°C/W
1000 4 TA = 35°C MUR4100E 75 1.75 @ 3.0 A 70 175 267-03 4–35
RθJA = 28°C/W

2–11
Case 221B Case 221A–06 Case 221E Case 221D
(TO–220AC) (TO–220AB)
1 1 1
2, 4 4 2, 4 2
3 3 STYLE 1: 3
4 STYLE 1:
PIN 1. CATHODE PIN 1. CATHODE STYLE 3:
STYLE 6: STYLE 7:
2. N/A 2. N/A PIN 1. ANODE
PIN 1. ANODE PIN 1. CATHODE
3. ANODE 3. ANODE 2. CATHODE
2. CATHODE 2. ANODE
4. CATHODE 3. ANODE 3. CATHODE 3. ANODE
4. CATHODE 4. ANODE
1
2 1
1 3 1 2
3 3
2
Table 13. TO–220 Type Ultrafast Rectifiers

Max VF @ iF
200 6 TC = 130°C MUR620CT 35 0.975 @ 3.0 A 75 175 221A-06 4–39
400 8 TC = 120°C MURH840CT 28 2.0 @ 4.0 A 100 175 221A-06 4–41
600 8 TC = 120°C MURH860CT 35 2.8 @ 4.0 A 100 175 221A-06 4–44
200 16 TC = 150°C MUR1620CT 35 0.975 @ 8.0 A 100 175 221A-06 4–46
200 16 TC = 160°C MUR1620CTR 85 1.2 @ 8.0 A 100 175 221A-06 4–51
400 16 TC = 150°C MUR1640CT 60 1.30 @ 8.0 A 100 175 221A-06 4–46
600 16 TC = 150°C MUR1660CT 60 1.5 @ 8.0 A 100 175 221A-06 4–46
1500 5 TC = 125°C MUR5150E 175 2.4 @ 5.0 A 100 125 221B 4–54
200 8 TC = 150°C MUR820 35 0.975 @ 8.0 A 100 175 221B 4–56
400 8 TC = 150°C MUR840 K 50 1.30 @ 8.0 A 100 175 221B 4–56
600 8 TC = 150°C MUR860 K 50 1.50 @ 8.0 A 100 175 221B 4–56
800 8 TC = 175°C MUR880E 75 1.80 @ 8.0 A 100 175 221B —
1000 8 TC = 150°C MUR8100E 75 1.80 @ 8.0 A 100 175 221B 4–61
1200 10 TC = 125°C MUR10120E 175 2.2 @ 6.5 A 100 125 221B 4–65
1500 10 TC = 125°C MUR10150E 175 2.4 @ 6.5 A 100 125 221B 4–68
200 15 TC = 150°C MUR1520 35 1.05 @ 15 A 200 175 221B 4–71
400 15 TC = 150°C MUR1540 60 1.25 @ 15 A 150 175 221B 4–71
600 15 TC = 145°C MUR1560 60 1.50 @ 15 A 150 175 221B 4–71
200 8 TC = 150°C MURF820 K 25 0.975 @ 8.0 A 100 150 ISOLATED 4–76
221E
200 16 TC = 150°C MURF1620CT K 25 0.975 @ 8.0 A 100 150 ISOLATED 4–79
221D
600 16 TC = 150°C MURF1660CT K 50 1.50 @ 8.0 A 100 150 ISOLATED 4–82
221D
K New Product

2–12
Case 340D Case 340E Case 340F
(TO–218AC) (TO–218) (TO–247)
1 1
2, 4 4 STYLE 1: 2, 4
4 STYLE 2: STYLE 2:
3 PIN 1. ANODE 1 PIN 1. CATHODE 3
3. ANODE PIN 1. ANODE 1
3. ANODE 2 4. CATHODE
3. ANODE 2
(BACK HEATSINK)
1
1 1 2
2
3 3 3
Table 14. TO–218 Types and TO–247 Ultrafast Rectifiers
Max VF @ iF
200 30 TC = 145°C MUR3020WT 35 1.05 @ 15 A 150 175 340F 4–85
400 30 TC = 145°C MUR3040WT 60 1.25 @ 15 A 150 175 340F 4–85
600 30 TC = 145°C MUR3060WT 60 1.70 @ 15 A 150 175 340F 4–85
200 30 TC = 150°C MUR3020PT 35 1.12 @ 15 A 200 175 340D 4–90
400 30 TC = 150°C MUR3040PT 60 1.12 @ 15 A 150 175 340D 4–90
600 30 TC = 145°C MUR3060PT 60 1.20 @ 15 A 150 175 340D 4–90
400 30 TC = 70°C MUR3040 K 100 1.5 @ 30 A 300 175 340E 4–95
800 30 TC = 70°C MUR3080 K 110 1.90 @ 30 A 300 175 340E 4–97
400 60 TC = 70°C MUR6040 100 1.50 @ 60 A 600 175 340E 4–98
K New Product
Case 357C SOT–227B

POWERTAP 4
1 3
1 2 1 4
4 3 2 3
Cathode = Mounting Plate
Anode = Terminal STYLE 2 STYLE 3
Table 15. POWERTAP II and SOT–227B Ultrafast Rectifiers
Max VF @ iF
VRRM IO(1) IO Rating Max trr TC = 25°C IFSM TJ Max
400 60 TC = 60°C BYT230PIV-400M K 100 1.5 @ 30 A 200 150 SOT-227B 4–100
Style 3
Style 3
Style 2
Style 2
200 200 TC = 130°C MURP20020CT K 50 1.00 @ 100 A 800 175 357C 4–116
400 200 TC = 100°C MURP20040CT K 50 1.30 @ 100 A 800 175 357C 4–116
All POWERTAP devices are being converted to the new, more rugged, POWERTAP II configuration beginning January 1994. Contact your Motorola representative
for more details.
All SOT–227B devices have 2500 volts isolation between the heatsink and active elements.

K New Product

2–13
Fast Recovery Rectifiers/General–Purpose Rectifiers
Axial lead Fast Recovery Rectifiers having maximum switching times of 200 ns and low cost general purpose rectifiers are listed
in the table below.
Case 59–03 Case 267–03 Case 194–04 Case 193–04

Plastic Plastic Plastic Plastic(10)
Cathode = Polarity Band Cathode = Polarity Band Cathode indicated by Cathode = Polarity Band
diode symbol
Case 221B Case 1–07
(TO–220AC) (TO–204AA)
Metal
4 STYLE 1:
PIN 1. CATHODE STYLE 9: STYLE 8:
2. N/A PIN 1. ANODE #1 PIN 1. CATHODE #1
3. ANODE 2. ANODE #2 2. CATHODE #2
4. CATHODE CASE. COMMON CATHODE CASE. COMMON ANODE
2
1
1
3
Table 16. Fast Recovery Rectifiers/General Purpose Rectifiers
Max VF @ iF
VRRM IO IO Rating TJ = 25°C Max trr IFSM TJ Max
(Volts) (Amperes) Condition Device (Volts) (ns) (Amperes) (°C) Case Page
400 1 TA = 75°C 1N4004 1.1 @ 1.0 A — 30 150 59-03(3) 5–2
1000 1 TA = 75°C 1N4007 1.1 @ 1.0 A — 30 150 59-03(3) 5–2
200 1 TA = 75°C 1N4935 1.2 @ 3.14 A 200 30 150 59-03(3) 5–3
TJ = 125°C
600 1 TA = 75°C 1N4937 1.2 @ 3.14 A 200 30 150 59-03(3) 5–3
TJ = 125°C
400 3 TL = 105°C 1N5404 1.2 @ 9.4 A — 200 150 267-03 5–5
600 3 TL = 105°C 1N5406 1.2 @ 9.4 A — 200 150 267-03 5–5
200 3 TA = 80°C(8) MR852 1.25 @ 3.0 A 200 100 150 267-03 5–6
600 3 TA = 80°C(8) MR856 1.25 @ 3.0 A 200 100 150 267-03 5–6
400 6 TA = 60°C MR754 1.25 @ 100 A — 400 175 194-04 5–8
RθJA = 25°C/W
1000 6 TA = 60°C MR760 1.25 @ 100 A — 400 175 194-04 5–8
RθJA = 25°C/W
400 25 TC = 150°C MR2504 1.18 @ 78.5 A — 400 175 193-04 5–12
1000 25 TC = 150°C MR2510 1.18 @ 78.5 A — 400 175 193-04 5–12
100 30 TC = 125°C MR4422CTR 1.2 @ 15 A — 400 150 1-07 5–18
Style 8
100 30 TC = 125°C MR4422CT 1.2 @ 15 A — 400 150 1-07 5–18
Style 9
20 35 TC = 150°C MR2535L(11) 1.1 @ 100 A — 400 175 194-04 5–19
1(3) Package Size: 0.120″ max diameter by 0.260″ length.
1(8) Must be derated for reverse power dissipation. See data sheet.
(10) Request data sheet for mounting information.
(11) Overvoltage Transient Suppressor: 24 – 32 volts avalanche voltage.

2–14
Section 3
Schottky Data Sheets
Rectifier Device Data 1

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Surface Mount MBR0520LT1

Schottky Power Rectifier MBR0520LT3
Motorola Preferred Devices
Plastic SOD–123 Package
The Schottky Power Rectifier employs the Schottky Barrier principle with a
barrier metal that produces optimal forward voltage drop–reverse current SCHOTTKY BARRIER
tradeoff. Ideally suited for low voltage, high frequency rectification, or as free RECTIFIER
wheeling and polarity protection diodes in surface mount applications where 0.5 AMPERES
compact size and weight are critical to the system. This package provides an 20 VOLTS
alternative to the leadless 34 MELF style package. These state–of–the–art
devices have the following features:
• Guardring for Stress Protection
• Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C)
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8″
• Package Designed for Optimal Automated Board Assembly
Mechanical Characteristics
• Reel Options: MBR0520LT1 = 3,000 per 7″ reel / 8 mm tape.
Reel Options: MBR0520LT3 = 10,000 per 13″ reel / 8 mm tape. CASE 425–04, Style 1
• Device Marking: B2 SOD–123
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 Volts
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current (Rated VR) TL = 90°C IF(AV) 0.5 Amps
Non–repetitive Peak Surge Current IFSM 5.5 Amps
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Storage Temperature Tstg – 65 to +125 °C
Operating Junction Temperature TJ – 65 to +125 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/µs
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Ambient (1) RθJA 340 °C/W
Thermal Resistance — Junction to Lead RθJL 150 °C/W
ELECTRICAL CHARACTERISTICS
VF TJ = 25°C TJ = 100°C Volts
Maximum Instantaneous Forward Voltage (2)
(iF = 0.1 Amps) 0.300 0.220
(iF = 0.5 Amps) 0.385 0.330
IR TJ = 25°C TJ = 100°C mA
Maximum Instantaneous Reverse Current (2)
(VR = 10 V) 75 µA 5 mA
(Rated dc Voltage = 20 V) 250 µA 8 mA
(1) FR–4 or FR–5 = 3.5 x 1.5 inches using the Motorola minimum recommended footprint.
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2

MBR0520LT1
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10,000
I R, REVERSE CURRENT ( µ A)
TJ = 100°C
TJ = 100°C 75°C 25°C – 25°C 1000

0.1
75°C
0.01 100
0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25
VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
200 100
TJ = + 25°C
150 10
C, CAPACITANCE (pF)
100 1
– 25°C
50 0.1
0 0.01
0 5 10 15 20 25 0 5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance Figure 4. Typical Reverse Current

P F(AV), AVERAGE POWER DISSIPATION (WATT)
1 0.35
AVERAGE FORWARD CURRENT (AMP)
0.875 0.315 TJ = 125°C

DC 0.28 SQUARE
0.75
IPK 0.245 WAVE DC
= π = SQUARE WAVE π
0.625 IAV 0.21 IPK
IAV
+ 20 10
5
0.5 0.175
5 0.14
0.375
10 0.105
0.25
0.07
0.125 20
0.035
0 0
60 67 74 81 88 95 102 109 116 123 130 0 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1
LEAD TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 5. Current Derating (Lead) Figure 6. Power Dissipation
2 Rectifier Device Data

MOTOROLA
Surface Mount MBR0530T1

Schottky Power Rectifier MBR0530T3
Plastic SOD–123 Package
. . . using the Schottky Barrier principle with a large area metal–to–silicon power
diode. Ideally suited for low voltage, high frequency rectification or as free SCHOTTKY BARRIER
wheeling and polarity protection diodes in surface mount applications where RECTIFIER
compact size and weight are critical to the system. This package also provides 0.5 AMPERES
an easy to work with alternative to leadless 34 package style. These 30 VOLTS
state–of–the–art devices have the following features:
• Low Forward Voltage
• Reel Options: MBR0530T1 = 3,000 per 7″ reel/8 mm tape
Reel Options: MBR0530T3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: B3 CASE 425–04
• Polarity Designator: Cathode Band SOD–123
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR) TL = 100°C IF(AV) 0.5 Amps
Non–repetitive Peak Surge Current IFSM 5.5 Amps
Thermal Resistance — Junction to Ambient (1) RθJA 340 °C/W
Thermal Resistance — Junction to Lead (1) RθJL 150 °C/W
Maximum Instantaneous Forward Voltage (2) VF Volts
(iF = 0.1 Amps, TJ = 25°C) 0.375
(iF = 0.5 Amps, TJ = 25°C) 0.43
Maximum Instantaneous Reverse Current (2) IR µA
(Rated dc Voltage, TC = 25°C) 130
(VR = 15 V, TC = 25°C) 20
(1) FR–4 or FR–5 = 3.5 x 1.5 inches using the Motorola minimum recommended footprint.
Rev 1

MBR0530T1
104
1000 TJ = 125°C
TJ = 125°C 75°C 25°C – 40°C 100

75°C
0.1
10
25°C
1
0.01
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 35 40
VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
180
160 TYPICAL CAPACITANCE AT 0 V = 170 pF
140
C, CAPACITANCE (pF)
120
100
80
60
40
20
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance

P F(AV), AVERAGE POWER DISSIPATION (WATT)
1 0.35
AVERAGE FORWARD CURRENT (AMP)
0.875 0.315 TJ = 125°C

DC SQUARE WAVE
0.28 DC
0.75 =π
0.245
= 10 =5
0.625 SQUARE WAVE 0.21
0.5 0.175 Ipk/Iav = 20
=π
0.375 0.14
=5
0.105
0.25 = 10 0.07
0.125 Ipk/Iav = 20
0.035
0 0
60 67 74 81 88 95 102 109 116 123 130 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
LEAD TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 4. Current Derating (Lead) Figure 5. Power Dissipation

MOTOROLA
Advance Information
Surface Mount MBR0540T1
Schottky Power Rectifier
SOD–123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier SCHOTTKY BARRIER
metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally RECTIFIER
suited for low voltage, high frequency rectification, or as a free wheeling and polarity 0.5 AMPERES
protection diodes in surface mount applications where compact size and weight are 40 VOLTS
critical to the system. This package provides an alternative to the leadless 34 MELF
style package. These state–of–the–art devices have the following features:
• Very Low Forward Voltage
Mechanical Characteristics:
• Reel Options: 3,000 per 7 inch reel / 8 mm tape
CASE 425–04, Style 1
• Reel Options: 10,000 per 13 inch reel / 8 mm tape SOD–123
• Device Marking: B4
• Polarity Designator: Cathode Band
• Case: Epoxy Molded
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C max. for 10 Seconds
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM 40 V
Average Rectified Forward Current (At Rated VR, TC = 115°C) IO 0.5 A
Peak Repetitive Forward Current IFRM 1.0 A
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
Non–Repetitive Peak Surge Current IFSM 5.5 A
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Storage / Operating Case Temperature Tstg, TC –55 to 150 °C
Operating Junction Temperature TJ –55 to 150 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 1,000 V/ms
Thermal Resistance – Junction–to–Lead (2) Rtjl 118 °C/W
Thermal Resistance – Junction–to–Ambient (3) Rtja 206
Maximum Instantaneous Forward Voltage (1) VF TJ = 25°C TJ = 100°C V
(IF = 0.5 A) 0.51 0.46
(IF = 1 A) 0.62 0.61
Maximum Instantaneous Reverse Current IR TJ = 25°C TJ = 100°C mA
(VR = 40 V) 20 5,000
(VR = 20 V) 10 13,000
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
(3) 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
Rev 2

MBR0540T1
100

10 10
25°C
1.0 1.0
TJ = 125°C TJ = –40°C
TJ = 125°C
TJ = 25°C TJ = 100°C
TJ = 100°C TJ = 25°C
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E–3 100E–3
10E–3 I R, MAXIMUM REVERSE CURRENT (AMPS) 10E–3 TJ = 125°C

I R, REVERSE CURRENT (AMPS)
1.0E–3 TJ = 125°C 1.0E–3

TJ = 100°C
100E–6 100E–6
TJ = 100°C
10E–6 10E–6
TJ = 25°C
1.0E–6 TJ = 25°C 1.0E–6
100E–9 100E–9
0 10 20 30 40 0 10 20 30 40
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
0.8 0.45
PFO , AVERAGE POWER DISSIPATION (WATTS)
I O , AVERAGE FORWARD CURRENT (AMPS)
dc
0.7 0.40
FREQ = 20 kHz SQUARE WAVE dc
SQUARE WAVE 0.35
0.6 Ipk/Io = p
0.30
0.5
Ipk/Io = p Ipk/Io = 5
0.25
0.4 Ipk/Io = 10
Ipk/Io = 5 0.20
0.3 Ipk/Io = 20
Ipk/Io = 10 0.15
0.2 0.10
Ipk/Io = 20
0.1 0.05
0 0
0 20 40 60 80 100 120 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Figure 6. Forward Power Dissipation

MBR0540T1
100 126
TJ , DERATED OPERATING TEMPERATURE ( °C)

TJ = 25°C 124
Rtja = 118°C/W
122
C, CAPACITANCE (pF)
120
118
149°C/W
116
180°C/W
114
206°C/W
112
228°C/W
10 110
0 5.0 10 15 20 25 30 35 40 0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.00E+00
50%
20%
10%
1.00E–01
5.0%
2.0%
1.0%
1.00E–02
Rtjl(t) = Rtjl*r(t)
1.00E–03
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000
T, TIME (s)
Figure 9. Thermal Response Junction to Lead
1.00E+00
50%
20%
1.00E–01
10%
5.0%
2.0%
1.00E–02
1.0%
Rtjl(t) = Rtjl*r(t)
1.00E–03
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient

MOTOROLA
Designer's  Data Sheet

Schottky Power Rectifier MBRS130LT3
Surface Mount Power Package Motorola Preferred Device
. . . Employs the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity protection diodes, SCHOTTKY BARRIER
in surface mount applications where compact size and weight are critical to RECTIFIER
the system. 1.0 AMPERE
30 VOLTS
• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
• Small Compact Surface Mountable Package with J–Bend Leads
• Highly Stable Oxide Passivated Junction
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
CASE 403A–03
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B130
MAXIMUM RATINGS
Average Rectified Forward Current TL = 120°C IF(AV) 1.0 Amps
TL = 110°C 2.0
Nonrepetitive Peak Surge Current IFSM 40 Amps
(TL = 25°C)
(iF = 1.0 A, TJ = 25°C) 0.395
(iF = 2.0 A, TJ = 25°C) 0.445
Maximum Instantaneous Reverse Current (1) IR mA
(Rated dc Voltage, TJ = 25°C) 1.0
(Rated dc Voltage, TJ = 100°C) 10
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Rev 1

MBRS130LT3
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)

10
I R , REVERSE LEAKAGE CURRENT (mA)

5.0 TJ = 100°C
100
2.0 10
25°C
1.0 1.0 TJ = 100°C
0.5 0.1
25°C
0.2 0.01
0.1 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 3 6 9 12 15 18 21 24 27 30
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Leakage Current
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
8 8
TJ = 100°C
7 RATED VOLTAGE APPLIED 7
RθJC = 12°C/W SQUARE
TJ = 100°C WAVE
6 6
5 5
IPK 10 5 π
4 4 = 20
IAV DC
DC
3 SQUARE 3
WAVE
2 2
1 1
0 0
50 60 70 80 90 100 110 120 130 0 1 2 3 4 5 6 7 8
TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Current Derating (Case) Figure 4. Typical Power Dissipation
400
350 NOTE: TYPICAL CAPACITANCE

AT 0 V = 290 pF
300
C, CAPACITANCE (pF)
250
200
150
100
50
0
0 4 8 12 16 20 24 28 32

MOTOROLA
Surface Mount
Schottky Power Rectifier MBRS140T3
. . . employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device
oxide passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical to the
SCHOTTKY BARRIER
system.
RECTIFIERS
• Small Compact Surface Mountable Package with J–Bend Leads 1.0 AMPERE
• Rectangular Package for Automated Handling 40 VOLTS
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
Readily Solderable CASE 403A–03
Max. for 10 Seconds
• Marking: B140
MAXIMUM RATINGS
(TL = 25°C)
Maximum Instantaneous Forward Voltage (1) VF 0.6 Volts
(iF = 1.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (1) iR mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Rev 2

MBRS140T3

100
1 50
TC = 100°C 30 TJ = 125°C
20
I R , REVERSE CURRENT (mA)

0.7
0.5 10
100°C
5
0.3 3
2
0.2 75°C
1
0.5
0.1 0.3
0.07 0.2 25°C
TC = 25°C 0.1
0.05
0.05
0.03 0.03
0.02
0.02 0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 16 20 24 28 32 36 40
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
200
160 AT 0 V = 160 pF
C, CAPACITANCE (pF)
140
120
100
80
60
40
20
0
0 4 8 12 16 20 24 28 32 36 40
10 5
DC
9 RATED VOLTAGE APPLIED TJ = 125°C SQUARE
RθJC = 12°C/W WAVE
8 4
TJ = 125°C π
7
5
6 3
5 CAPACITANCE
LOAD 10
4 2
DC IPK
3 = 20
SQUARE WAVE IAV
2 1
1
0 0
30 40 50 60 70 80 90 100 110 120 130 0 1 2 3 4 5
Figure 4. Current Derating (Case) Figure 5. Power Dissipation

MOTOROLA
Designer's  Data Sheet

Surface Mount Power Package Motorola Preferred Device
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in
a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for low voltage, high frequency rectification, or as free wheeling and SCHOTTKY BARRIER
polarity protection diodes, in surface mount applications where compact size RECTIFIER
and weight are critical to the system. These state-of-the-art devices have the 1.0 AMPERE
following features: 100 VOLTS
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• High Blocking Voltage — 100 Volts
CASE 403A–03
Readily Solderable
Max. for 10 Seconds
• Marking: B110
MAXIMUM RATINGS
TL = 100°C 2.0
Voltage Rate of Change dv/dt 10 V/ns
Thermal Resistance — Junction to Lead (TL = 25°C) RθJL 22 °C/W
Maximum Instantaneous Forward Voltage (1) VF 0.75 Volts
(iF = 1.0 A, TJ = 25°C)
Rev 2

MBRS1100T3
TYPICAL ELECTRICAL CHARACTERISTICS
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)

20 1K
10 400
200
TJ = 150°C TJ = 150°C
I R , REVERSE CURRENT ( µA)

5 100
40 125°C
2 20
100°C 10 100°C
1
4
0.5 25°C 2
1
0.2 0.4
0.2
0.1 0.1
0.05 0.04
0.02
0.02 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 90 100

PF(AV), AVERAGE POWER DISSIPATION (WATTS)
3.2 4.0

RATED VR APPLIED
2.8 3.5 RθJL = 22°C/W
TJ = 100°C TJ = 100°C
2.4 3.0
DC
2.0 2.5
SQUARE SQUARE
1.6 WAVE 2.0
WAVE
1.2 DC 1.5
0.8 1.0
0.4 0.5
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation Figure 4. Current Derating, Lead
280
260
220 NOTE: AT 0 V = 270 pF
200
C, CAPACITANCE (pF)
180
160
140
120
100
80
60
40
20
0
0.1 0.2 0.5 1 2 5 10 20 50 100

MOTOROLA
Surface Mount MBRS340T3

. . . employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device
oxide passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical to the
SCHOTTKY BARRIER
system.
RECTIFIERS
• Small Compact Surface Mountable Package with J–Bend Leads 3.0 AMPERES
• Rectangular Package for Automated Handling 40, 60 VOLTS
Readily Solderable CASE 403–03
Max. for 10 Seconds
• Marking: B34, B36
MAXIMUM RATINGS
Rating Symbol MBRS340T3 MBRS360T3 Unit
Peak Repetitive Reverse Voltage VRRM 40 60 Volts
Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C Amps
4.0 @ TL = 90°C
Thermal Resistance — Junction to Lead RθJL 11 11 °C/W
(iF = 3.0 A, TJ = 25°C) 0.525 0.740
(Rated dc Voltage, TJ = 25°C) 2.0 0.5
(Rated dc Voltage, TJ = 100°C) 20 20
Rev 2

MBRS340T3 MBRS360T3
i F , INSTANTANEOUS FORWARD CURRENT (AMPS

100
3 50
2 20 TJ = 125°C

TC = 100°C
10
1 5 100°C
0.7 2
0.5
1 75°C
0.3 0.5
0.2 0.2
TC = 25°C 0.1
0.05 25°C
0.1
0.07 0.02
0.05 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 4 8 12 16 20 24 28 32 36 40
5
TJ = 100°C 5
4
SQUARE
10 WAVE
3 (CAPACITIVE LOAD)
DC
IPK
= 20
2 IAV
0
0 1 2 3 4 5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Power Dissipation
10 500
TYPICAL CAPACITANCE AT 0 V = 480 pF
9 RATED VOLTAGE APPLIED
RθJC = 10.5°C/W
8 400
TJ = 125°C TJ = 25°C
C, CAPACITANCE (pF)
7
6 300
5 DC
4 200
3 SQUARE
2 WAVE 100
1
0 0
40 50 60 70 80 90 100 110 120 130 140 0 4 8 12 16 20 24 28 32 36 40
TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Current Derating (Case) Figure 5. Typical Capacitance

MOTOROLA
SWITCHMODE Power Rectifiers MBRD320

DPAK Surface Mount Package MBRD330
. . . designed for use as output rectifiers, free wheeling, protection and steering MBRD340
MBRD350
diodes in switching power supplies, inverters and other inductive switching
circuits. These state–of–the–art devices have the following features:
•
•
Extremely Fast Switching
Extremely Low Forward Drop
MBRD360
MBRD320, MBRD340 and MBRD360 are
• Platinum Barrier with Avalanche Guardrings Motorola Preferred Devices
• Guaranteed Reverse Avalanche
• Case: Epoxy, Molded SCHOTTKY BARRIER
• Weight: 0.4 gram (approximately) RECTIFIERS
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are 3 AMPERES
Readily Solderable 20 TO 60 VOLTS
Max. for 10 Seconds
• Shipped 75 units per plastic tube 4
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding a “T4’’
suffix to the part number 1
• Marking: B320, B330, B340, B350, B360 3
1 4
CASE 369A–13
PLASTIC
3
MAXIMUM RATINGS
MBRD
Rating Symbol Unit
320 330 340 350 360
Peak Repetitive Reverse Voltage VRRM 20 30 40 50 60 Volts
Average Rectified Forward Current (TC = +125°C, Rated VR) IF(AV) 3 Amps
Peak Repetitive Forward Current, TC = +125°C IFRM 6 Amps
(Rated VR, Square Wave, 20 kHz)
Peak Repetitive Reverse Surge Current (2 µs, 1 kHz) IRRM 1 Amp
Operating Junction Temperature TJ –65 to +150 °C
Storage Temperature Tstg –65 to +175 °C
Maximum Thermal Resistance, Junction to Case RθJC 6 °C/W
Maximum Thermal Resistance, Junction to Ambient (1) RθJA 80 °C/W
(1) Rating applies when surface mounted on the minimum pad size recommended.
Rev 1

MBRD320 MBRD330 MBRD340 MBRD350 MBRD360
iF = 3 Amps, TC = +25°C 0.6
iF = 3 Amps, TC = +125°C 0.45
iF = 6 Amps, TC = +25°C 0.7
iF = 6 Amps, TC = +125°C 0.625
(Rated dc Voltage, TC = +25°C) 0.2
(Rated dc Voltage, TC = +125°C) 20
TYPICAL CHARACTERISTICS
100 100
40 TJ = 150°C
20
10

125°C
4.0
2.0 100°C
1.0
0.4 75°C
0.2
0.1
0.04
0.02
0.01 25°C
10
0.004
0.002
0.001
20 30 40 050 10 60 70
*The curves shown are typical for the highest voltage device in the
150°C voltage grouping. Typical reverse current for lower voltage selections
TJ = 25°C can be estimated from these curves if VR is sufficient below rated VR.
Figure 2. Typical Reverse Current
125°C
10
75°C SINE
1.0 9.0
WAVE
8.0 TJ = 150°C
5
7.0
10
6.0
dc
5.0 IPK/IAV = 20 SQUARE
WAVE
4.0
3.0
2.0
1.0
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation

MBRD320 MBRD330 MBRD340 MBRD350 MBRD360
8.0 4.0

RATED VOLTAGE APPLIED TJ = 150°C RqJA = 80°C/W
7.0 3.5 SURFACE MOUNTED ON MIN.
RqJC = 6°C/W PAD SIZE RECOMMENDED
6.0 3.0
SINE TJ = 150°C dc
5.0 2.5 SQUARE WAVE
WAVE
OR TJ = 125°C OR
4.0 2.0
SQUARE dc SINE WAVE
3.0 WAVE 1.5 VR = 25 V
TJ = 150°C
2.0 1.0
1.0 0.5
0 0
80 90 100 110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case Figure 5. Current Derating, Ambient
1K
700
500
300
C, CAPACITANCE (pF)
200
TJ = 25°C
100
70
50
30
20
10
0 10 20 30 40 50 60 70

MOTOROLA
SWITCHMODE Power Rectifiers MBRD620CT

DPAK Surface Mount Package MBRD630CT
. . . in switching power supplies, inverters and as free wheeling diodes, these MBRD640CT
•
MBRD650CT
MBRD660CT
Extremely Fast Switching
• Extremely Low Forward Drop
• Platinum Barrier with Avalanche Guardrings MBRD620CT, MBRD640CT and
• Guaranteed Reverse Avalanche MBRD660CT are
• Weight: 0.4 gram (approximately) SCHOTTKY BARRIER
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are RECTIFIERS
Readily Solderable 6 AMPERES
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C 20 TO 60 VOLTS
Max. for 10 Seconds
• Shipped 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding a “T4’’ 4
suffix to the part number
• Marking: B620T, B630T, B640T, B650T, B660T 1 1
3
4
CASE 369A–13
PLASTIC
3
MAXIMUM RATINGS
MBRD
Rating Symbol Unit
620CT 630CT 640CT 650CT 660CT
Average Rectified Forward Current Per Diode IF(AV) 3 Amps
TC = 130°C (Rated VR) Per Device 6
Peak Repetitive Forward Current, TC = 130°C IFRM 6 Amps
(Rated VR, Square Wave, 20 kHz) Per Diode
THERMAL CHARACTERISTICS PER DIODE
Rev 1

MBRD620CT MBRD630CT MBRD640CT MBRD650CT MBRD660CT
ELECTRICAL CHARACTERISTICS PER DIODE
iF = 3 Amps, TC = 25°C 0.7
iF = 3 Amps, TC = 125°C 0.65
iF = 6 Amps, TC = 25°C 0.9
iF = 6 Amps, TC = 125°C 0.85
(Rated dc Voltage, TC = 25°C) 0.1
100 100
70 TJ = 150°C
10

125°C
50
1.0
30
75°C
20 0.1
0.01
25°C
10
7.0 0.001
20 30 40 0
50 10
60 70
5.0 VR, REVERSE VOLTAGE (VOLTS)
voltage grouping. Typical reverse current for lower voltage selections
3.0
can be estimated from these curves if VR is sufficient below rated VR.
125°C Figure 2. Typical Reverse Current,* Per Leg
2.0
14
150°C 13 SINE
1.0 TC = 25°C 12 5 WAVE
11 10
0.7 10
9.0 IPK/IAV = 20
0.5 75°C 8.0
7.0
6.0 SQUARE
0.3 dc WAVE
5.0
0.2 4.0
3.0 TJ = 150°C
2.0
1.0
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg

MBRD620CT MBRD630CT MBRD640CT MBRD650CT MBRD660CT
8.0 4.0

RATED VOLTAGE APPLIED TJ = 150°C RqJA = 80°C/W
7.0 3.5 SURFACE MOUNTED ON MIN.
RqJC = 6°C/W PAD SIZE RECOMMENDED
6.0 3.0
TJ = 150°C dc
5.0 2.5 SQUARE WAVE
SINE
WAVE VR = 25 V OR
4.0 2.0
OR dc SINE WAVE
3.0 SQUARE 1.5
WAVE VR = 60 V
2.0 1.0
1.0 0.5
0 0
80 90 100 110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg
1K
C, CAPACITANCE (pF)
100 TJ = 25°C
10
0 10 20 30 40 50 60 70
Figure 6. Typical Capacitance, Per Leg

MOTOROLA
SWITCHMODE Power Rectifier

DPAK Surface Mount Package MBRD835L
This SWITCHMODE power rectifier which uses the Schottky Barrier principle
Motorola Preferred Device
with a proprietary barrier metal, is designed for use as output rectifiers, free
wheeling, protection and steering diodes in switching power supplies, inverters
and other inductive switching circuits. This state of the art device has the following
features:
• Low Forward Voltage SCHOTTKY BARRIER
• 125°C Operating Junction Temperature RECTIFIER
8 AMPERES
35 VOLTS
• Compact Size
• Lead Formed for Surface Mount
• Case: Epoxy, Molded 4
• Weight: 0.4 gram (approximately)
1
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads 4
1
3
are Readily Solderable 3
• Lead and Mounting Surface Temperature for Soldering Purposes:
CASE 369A–13
260°C Max. for 10 Seconds
DPAK PLASTIC, STYLE 3
• Available in 16 mm Tape and Reel, 2500 units per 13″ reel, by
adding a “T4” suffix to the part number
• Marking: B835L
MAXIMUM RATINGS
Average Rectified Forward Current IF(AV) 8 Amps
(At Rated VR) TC = +88°C
Peak Repetitive Forward Current IFRM 16 Amps
(At Rated VR, Square Wave, 20 kHz) TC = + 80°C
Non–Repetitive Peak Surge Current IFSM 75 Amps
Repetitive Avalanche Current IAR 2 Amps
(Current Decaying Linearly to Zero in 1 µs, Frequency Limited by TJmax)
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µs
Thermal Resistance — Junction to Case RθJC 6 °C/W
Thermal Resistance — Junction to Ambient(1) RθJA 80 °C/W
Maximum Instantaneous Forward Voltage(2) (iF = 8 Amps, TC = + 25°C) VF 0.51 Volts
(iF = 8 Amps, TC = +125°C) 0.41
Maximum Instantaneous Reverse Current(2) (Rated dc Voltage, TC = + 25°C) IR 1.4 mA
(Rated dc Voltage, TC = +100°C) 35
Rev 1

MBRD835L
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

iF, INSTANTANEOUS FORWARD CURRENT (mA)
10 10
TJ = 125°C 25°C TJ = 125°C

1 1
75°C
0.1 0.1
25°C
0.01 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6
vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage
1000
100
100 TJ = 125°C I R, REVERSE CURRENT (mA) TJ = 125°C
I R, REVERSE CURRENT (mA)
10 100°C
10 100°C
1 1
75°C
25°C
0.1
0.1
0.01
25°C
0.001 0.01
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
VF, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current
TJ = 25°C
TYPICAL
MAXIMUM
1000
C, CAPACITANCE (pF)
100
1 10
Figure 5. Maximum and Typical Capacitance

MBRD835L

IF(AV), AVERAGE FORWARD CURRENT (AMPS) 16 8
TJ = 125°C RθJA = 40°C/W
14.4 TJ = 125°C 7 dc
RθJA = 6°C/W SURFACE MOUNTED ON
12.8
dc 6 MININUM RECOMMENDED
11.2 π (RESISTIVE LOAD) PAD SIZE
5 π (RESISTIVE LOAD)
9.6
8
SQUARE WAVE
IPK
+ 5
(CAPACITIVE
4
SQUARE WAVE
IPK
IAV
+ 5 (CAPACITIVE
LOAD)
IAV LOAD)
6.4 3
4.8 10
10 2
3.2
1.6 1 20
20
0 0
80 85 90 95 100 105 110 115 120 125 130 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating
P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)

5
8
TJ = 125°C RθJA = 80°C/W TJ = 125°C
4.5 dc
SURFACE MOUNTED ON
+ 5 (CAPACITIVE
4 SQUARE WAVE dc
π MININUM RECOMMENDED 6
IPK
3.5 (RESISTIVE LOAD) PAD SIZE IAV LOAD)
3 5
2.5
SQUARE WAVE IPK
IAV
+ 5
(CAPACITIVE
LOAD) 4
10
20
2 3
1.5 10
2
1
0.5 20 1
0 0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MBRB1545CT

D2PAK Surface Mount Power Package Motorola Preferred Device
The D2PAK Power Rectifier employs the Schottky Barrier principle with a
platinum barrier metal. These state-of-the-art devices have the following
features:
SCHOTTKY BARRIER
• Center-Tap Configuration RECTIFIER
• Guardring for Stress Protection 15 AMPERES
• Low Forward Voltage 45 VOLTS
• Short Heat Sink Tab Manufactured — Not Sheared!
4
• Similar in Size to the Industry Standard TO-220 Package
1
Mechanical Characteristics 4 1
• Case: Epoxy, Molded 3 3
• Weight: 1.7 grams (approximately)
CASE 418B-02
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are D2PAK
Readily Solderable
Max. for 10 Seconds
• Available in 24 mm Tape and Reel, 800 units per 13″ reel by adding a “T4”
• Marking: B1545T
MAXIMUM RATINGS, PER LEG

Average Rectified Forward Current IF(AV) 7.5 Amps
(Rated VR) TC = 105°C Total Device 15
(Rated VR, Square Wave, 20 kHz), TC = 105°C
Non-repetitive Peak Surge Current IFSM 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 1.0 Amp
THERMAL CHARACTERISTICS, PER LEG
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
— Junction to Ambient (1) RθJA 50
(1) When mounted using minimum recommended pad size on FR-4 board.
Rev 2

MBRB1545CT
ELECTRICAL CHARACTERISTICS, PER LEG
Maximum Instantaneous Forward Voltage (2) vF Volts
(iF = 7.5 Amps, TJ = 125°C) 0.57
(iF = 15 Amps, TJ = 125°C) 0.72
(iF = 15 Amps, TJ = 25°C) 0.84
50
I R, REVERSE LEAKAGE CURRENT (mA)

30
20 10
10 125°C
1
3 85°C
2
0.1
1
0.5 25°C
125°C 85°C 25°C 0.01
0.001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
16 16
TJ = 125°C IPK
=π RATED VOLTAGE APPLIED
14 IAV 14
RθJC = 2°C/W
IPK DC
12 IPK =5 12
= 10 IAV
IAV SQUARE
10 IPK 10
= 20 WAVE
IAV
8 8
DC
6 6
SQUARE
4 4
WAVE
2 2
0
0 2 4 6 8 10 12 14 16 120 125 130 135 140 145 150 155 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C)
Figure 3. Typical Forward Power Dissipation Figure 4. Current Derating, Case

MOTOROLA
 Data Sheet
Designer's

Employs the use of the Schottky Barrier principle with a platinum barrier metal.
These state–of–the–art devices have the following features:
• Package Designed for Power Surface Mount Applications
SCHOTTKY BARRIER
• Center–Tap Configuration
RECTIFIER
4
• Similar in Size to Industry Standard TO–220 Package
1
Mechanical Characteristics 4
1
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are CASE 418B–02
Readily Solderable
• Marking: B2060T


(1) See Chapter 7 for mounting conditions

Rev 1

MBRB2060CT
(iF = 20 Amps, TJ = 125°C) 0.85
(iF = 20 Amps, TJ = 25°C) 0.95
50
TJ = 150°C
150°C
20 10

175°C TJ = 125°C
10
100°C TJ = 100°C
5 1
TJ = 25°C
3
0.1
0.5 0.01 TJ = 25°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 20 40 60 80 100 120
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
I F(AV), AVERAGE FORWARD CURRENT (AMPS)
32 20
IPK/IAV = 5
RATED VOLTAGE 18 TJ = 125°C
28 APPLIED
16 PI
AVERAGE POWER (WATTS)
24 IPK/IAV = 10
RθJC = 2°C/W 14
20 12
IPK/IAV = 20
16 10
DC SQUARE
12 SQUARE 8
WAVE
WAVE 6
8 DC
4
4 2
0 0
80 90 100 110 120 130 140 150 160 0 2 4 6 8 10 12 14 16 18 20
TC, CASE TEMPERATURE (°C) AVERAGE CURRENT (AMPS)
Figure 3. Typical Current Derating, Case, Figure 4. Average Power Dissipation and
Per Leg Average Current

MOTOROLA
 Data Sheet
Designer's

The D2PAK Power Rectifier employs the use of the Schottky Barrier principle
with a platinum barrier metal. These state–of–the–art devices have the
following features:
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
• Guardring for Stress Protection 100 VOLTS
• Guaranteed Reverse Avalanche 4
1
• Similar in Size to Industry Standard TO–220 Package 4 1
CASE 418B–02
D2PAK
Readily Solderable
• Marking: B20100T


Rev 1

MBRB20100CT
Maximum Instantaneous Forward Voltage (2) (iF = 10 Amp, TC = 125°C) vF 0.75 Volts
(iF = 10 Amp, TC = 25°C) 0.85
(iF = 20 Amp, TC = 125°C) 0.85
(iF = 20 Amp, TC = 25°C) 0.95
Maximum Instantaneous Reverse Current (2) (Rated dc Voltage, TJ = 125°C) iR 6.0 mA
50
TJ = 150°C
150°C
20 10

175°C TJ = 125°C
10
100°C TJ = 100°C
5 1
TJ = 25°C
3
0.1
0.5 0.01 TJ = 25°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 20 40 60 80 100 120
32 20
IPK/IAV = 5
RATED VOLTAGE 18 TJ = 125°C
28 APPLIED
16 PI
24 IPK/IAV = 10
RθJC = 2°C/W 14
20 12
IPK/IAV = 20
16 10
DC SQUARE
12 SQUARE 8
WAVE
WAVE 6
8 DC
4
4 2
0 0
80 90 100 110 120 130 140 150 160 0 2 4 6 8 10 12 14 16 18 20
TC, CASE TEMPERATURE (°C) AVERAGE CURRENT (AMPS)
Figure 3. Typical Current Derating, Case, Figure 4. Average Power Dissipation and
Per Leg Average Current

MOTOROLA
SWITCHMODE Power
Dual Schottky Rectifier MBRB20200CT
. . . using Schottky Barrier technology with a platinum barrier metal. This
state–of–the–art device is designed for use in high frequency switching power
supplies and converters with up to 48 volt outputs. They block up to 200 volts
and offer improved Schottky performance at frequencies from 250 kHz to
5.0 MHz.
• 200 Volt Blocking Voltage SCHOTTKY BARRIER
RECTIFIER
• Low Forward Voltage Drop
20 AMPERES
• Guardring for Stress Protection and High dv/dt Capability
200 VOLTS
(10,000 V/µs)
• Dual Diode Construction — Terminals 1 and 3 Must be
Connected for Parallel Operation at Full Rating
• Weight: 1.7 grams (approximately) 1
• Finish: All External Surfaces Corrosion Resistant and Terminal 4 1
Leads are Readily Solderable 3
3
• Lead and Mounting Surface Temperature for Soldering
Purposes: 260°C Max. for 10 Seconds CASE 418B–02
• Available in 24 mm Tape and Reel, 800 units per 13″ reel by
• Marking: B20200
MAXIMUM RATINGS (PER LEG)

Average Rectified Forward Current Per Leg IF(AV) 10 Amps
(Rated VR) TC = 125°C Per Package 20
Peak Repetitive Forward Current, Per Leg IFRM 20 Amps
(Rated VR, Square Wave, 20 kHz) TC = 90°C
THERMAL CHARACTERISTICS (PER LEG)
ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1) (IF = 10 Amps, TC = 25°C) VF 0.9 Volts
(IF = 10 Amps, TC = 125°C) 0.8
(IF = 20 Amps, TC = 25°C) 1.0
(IF = 20 Amps, TC = 125°C) 0.9
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) IR 1.0 mA
DYNAMIC CHARACTERISTICS (PER LEG)
Capacitance (VR = – 5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.

MBRB20200CT
100 10,000
70
IF, INSTANEOUS FORWARD CURRENT (AMP)
TJ = 150°C
50
1,000
TJ = 150°C
TJ = 125°C
IR , REVERSE CURRENT ( µ A)
20 100
TJ = 100°C
TJ = 125°C
10 10
7
TJ = 100°C
5 1
TJ = 25°C
2 0.1
TJ = 25°C
1 0.01
0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE CURRENT (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg) Figure 2. Typical Reverse Current (Per Leg)
40 25

TJ = 125°C
SQUARE RATED VOLTAGE
36 WAVE RθJC = 2°C/W
32 10 20
28
dc
24 IPK 15
= 20 dc
20 IAV SQUARE
WAVE
16 10
12
8
5
4
0
0 5 10 15 20 25 30 35 0
90 100 110 120 130 140 150 160
Figure 3. Forward Power Dissipation Figure 4. Current Derating, Case
20 500
RθJA = 16°C/W
RATED VOLTAGE
TJ = 25°C
16 400
C, CAPACITANCE (pF)
12 dc
300
8 SQUARE 200
WAVE
4 100
0 0
0 25 50 75 100 125 150 175 1 2 5 10 20 50 70 100
TA, AMBIENT TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Derating, Ambient Figure 6. Typical Capacitance (Per Leg)

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MBRB2515L
OR'ing Function Diode

D2PAK Surface Mount Power Package
The D2PAK Power Rectifier employs the Schottky Barrier principle in a large
metal–to–silicon power diode. State–of–the–art geometry features epitaxial SCHOTTKY BARRIER
construction with oxide passivation and metal overlay contact. Ideally suited for RECTIFIER
use in low voltage, high frequency switching power supplies, free wheeling 25 AMPERES
diodes, and polarity protection diodes. These state–of–the–art devices have the 15 VOLTS
following features:
4
4 1
• Short Heat Sink Tab Manufactured — Not Sheared! 3
3
• Similar in Size to the Industry Standard TO–220 Package
Mechanical Characteristics CASE 418B–02
D2PAK
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Purposes: 260°C Max. for 10 Seconds
• Marking: B2515L
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR) TC = 90°C IF(AV) 25 Amps
Operating Junction Temperature TJ 100 °C
(1) When mounted using minimum recommended pad size on FR–4 board.
Rev 1

MBRB2515L
(IF = 19 Amps, TJ = 70°C) 0.28
(IF = 25 Amps, TJ = 70°C) 0.42
(IF = 25 Amps, TJ = 25°C) 0.45
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
50 1000
70°C
IR , REVERSE LEAKAGE CURRENT (mA)

30 400
20 200 TJ = 100°C
TJ = 25°C
100
10
7.0 40 70°C
5.0 20
10
3.0 4.0
2.0
2.0 25°C
1.0 1.0
0.7 0.4
0.5 0.2
0.3 0.1
0.2 0.04
0.02
0.1 0.01
0 0.1 0.2 0.3 0.4 0.5 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
40 40
SQUARE RATED VOLTAGE APPLIED

35 TJ = 70°C 35
WAVE RqJC = 1°C/W
30 30
p
25 25
dc
+ 10
I 5.0
PK dc
20 20
I SQUARE WAVE
AV
15 15
10 10
5.0 5.0
0 0
0 5.0 10 15 20 25 30 35 40 60 65 70 75 80 85 90 95 100

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MBRB2535CTL

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large
metal–to–silicon power diode. State–of–the–art geometry features epitaxial
construction with oxide passivation and metal overlay contact. Ideally suited for
use in low voltage, high frequency switching power supplies, free wheeling SCHOTTKY BARRIER
diodes, and polarity protection diodes. These state–of–the–art devices have the RECTIFIER
following features: 25 AMPERES
35 VOLTS
4
4 1
3
• Similar in Size to the Industry Standard TO–220 Package 3
Mechanical Characteristics CASE 418B–02

• Case: Epoxy, Molded D2PAK

• Available in 24 mm Tape and Reel, 800 units per 13″ reel by adding a “T4” suffix to the part number
• Marking: B2535L

(Rated VR) TC = 110°C

Rev 1

MBRB2535CTL
Maximum Instantaneous Forward Voltage (2) (iF = 25 Amps, TJ = 25°C) vF 0.55 Volts
(iF = 12.5 Amps, TJ = 125°C) 0.41
(iF = 12.5 Amps, TJ = 25°C) 0.47
Maximum Instantaneous Reverse Current (2) (Rated dc Voltage, TJ = 125°C) iR 500 mA
I F, INSTANTANEOUS FORWARD CURRENT (AMP)
1000
50

TJ = 125°C
20 100
TJ = 125°C TJ = 100°C
10
5 10
TJ = 25°C
2
1
1 TJ = 25°C
0.5
0.1
0.2
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 0 5 10 15 20 25 30 35
40 32
TJ = 125°C
35 28 (RATED Vr APPLIED)
RθJC = 2°C/W
SQUARE
30 WAVE 24
25 20
SINE WAVE
(RESISTIVE LOAD) DC
20 16
DC SQUARE
15 12
10 8
5 4
0 0
0 5 10 15 20 25 30 35 40 85 95 105 115 125

MOTOROLA
 Data Sheet
Designer's

The D2PAK Power Rectifier employs the Schottky Barrier principle with a
platinum barrier metal. These state–of–the–art devices have the following
features:
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
• Similar in Size to the Industry Standard TO–220 Package
1
3
• Weight: 1.7 grams (approximately) CASE 418B–02
• Finish: All External Surfaces Corrosion Resistant and Terminal D2PAK
• Marking: B2545T

Rev 2

MBRB2545CT
Maximum Instantaneous Forward Voltage (2) (iF = 30 Amps, TJ = 125°C) vF 0.73 Volts
(iF = 30 Amps, TJ = 25°C) 0.82
Maximum Instantaneous Reverse Current (2) (Rated dc Voltage, TJ = 125°C) iR 40 mA
200
100
100
70

50 40 TJ = 150°C
20
30 TJ = 125°C 10 125°C
20 100°C 4
2 100°C
25°C
1
10 75°C
0.4
7 0.2
5 0.1
3 0.04
0.02 25°C
2 0.01
0.004
1 0.002
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
32 32
SQUARE WAVE
28 TJ = 125°C 28
IPK DC
24 (RESISTIVE LOAD) =π 24
IAV
DC
20 20
5
(CAPACITIVE SQUARE
16 LOADS) 16
10 WAVE
12 12
IPK
= 20 RATED VOLTAGE APPLIED
8 IAV 8
RθJC = 1.5°C/W
4 4
0 0
0 4 8 12 16 20 24 28 32 36 40 110 120 130 140 150
IF, AVERAGE FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C)

MOTOROLA
Axial Lead Rectifiers 1N5817

. . . employing the Schottky Barrier principle in a large area metal–to–silicon
1N5818
1N5819
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes. 1N5817 and 1N5819 are
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency SCHOTTKY BARRIER
Mechanical Characteristics RECTIFIERS
• Case: Epoxy, Molded 1 AMPERE
20, 30 and 40 VOLTS
Readily Solderable
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819 CASE 59–04
MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V
Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (2) IO 1.0 A
(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) TA 85 80 75 °C
Non–Repetitive Peak Surge Current IFSM 25 (for one cycle) A
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg –65 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C
THERMAL CHARACTERISTICS (2)

Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 80 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)

Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A) vF 0.32 0.33 0.34 V
(iF = 1.0 A) 0.45 0.55 0.6
(iF = 3.0 A) 0.75 0.875 0.9
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (TL = 25°C) IR 1.0 1.0 1.0 mA
(TL = 100°C) 10 10 10
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Rev 3

1N5817 1N5818 1N5819
NOTE 1 — DETERMINING MAXIMUM RATINGS 125
40 30 23
Reverse power dissipation and the possibility of thermal runaway
TR, REFERENCE TEMPERATURE ( C)

must be considered when operating this rectifier at reverse voltages ° 115
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = TJ(max) – RθJAPF(AV) – RθJAPR(AV) 105
(1)
where TA(max) = Maximum allowable ambient temperature
RθJA (°C/W) = 110
TJ(max) = Maximum allowable junction temperature
95
(125°C or the temperature at which thermal 80
runaway occurs, whichever is lowest)
60
PF(AV) = Average forward power dissipation 85
PR(AV) = Average reverse power dissipation
RθJA = Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking re- 75
verse power dissipation and thermal runaway into consideration. The 2.0 3.0 4.0 5.0 7.0 10 15 20
figures solve for a reference temperature as determined by equation VR, DC REVERSE VOLTAGE (VOLTS)
(2).
Figure 1. Maximum Reference Temperature
TR = TJ(max) – RθJAPR(AV) (2) 1N5817
Substituting equation (2) into equation (1) yields:
TA(max) = TR – RθJAPF(AV) 125
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
40 30 23

temperature at which thermal runaway occurs or where TJ = 125°C, ° 115
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C. The 105
data of Figures 1, 2, and 3 is based upon dc conditions. For use in com- RθJA (°C/W) = 110
mon rectifier circuits, Table 1 indicates suggested factors for an equiv-
alent dc voltage to use for conservative design, that is: 80
95 60
VR(equiv) = Vin(PK) x F (4)
The factor F is derived by considering the properties of the various rec-
85
tifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a 12–volt dc supply
using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 75
0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA = 80°C/W. 3.0 4.0 5.0 7.0 10 15 20 30
VR, DC REVERSE VOLTAGE (VOLTS)
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Figure 2. Maximum Reference Temperature
Step 2. Find TR from Figure 2. Read TR = 109°C 1N5818
Step 1. Find @ VR = 9.2 V and RθJA = 80°C/W.
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W 125
40
I(FM)
@ = 10 and IF(AV) = 0.5 A. 30

I(AV) ° 115 23
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 – (80) (0.5) = 69°C.
105 RθJA (°C/W) = 110
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the 80
1N5819. 95
60
85
75
4.0 5.0 7.0 10 15 20 30 40
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reference Temperature
1N5819
Table 1. Values for Factor F
Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped* †
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) ≈ 2.0 Vin(PK). † Use line to center tap voltage for Vin.

1N5817 1N5818 1N5819
R θ JL, THERMAL RESISTANCE, JUNCTION–TO–LEAD (°C/W)

90 5.0
Sine Wave
80
BOTH LEADS TO HEATSINK, 3.0 I(FM) = π (Resistive Load)
EQUAL LENGTH
2.0 I(AV)
{
70 5
Capacitive
1.0 10
60 Loads dc
MAXIMUM 0.7 20
50 0.5 SQUARE WAVE
TYPICAL
40 0.3 TJ ≈ 125°C
0.2
30
0.1
20
0.07
10 0.05
1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0
L, LEAD LENGTH (INCHES) IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 4. Steady–State Thermal Resistance Figure 5. Forward Power Dissipation

1N5817–19
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
ZθJL(t) = ZθJL • r(t)
0.2
Ppk Ppk DUTY CYCLE, D = tp/t1
0.1 tp PEAK POWER, Ppk, is peak of an
TIME equivalent square power pulse.
0.07
0.05 t1
∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)]
where
0.03 ∆TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
0.02 r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)
Figure 6. Thermal Response
Mounting Method 1 Mounting Method 3

NOTE 2 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (RθJA) for P.C. Board with P.C. Board with
the mountings shown is to be used as typical guideline values for pre- 1–1/2″ x 1–1/2″ 1–1/2″ x 1–1/2″
liminary engineering, or in case the tie point temperature cannot be copper surface. copper surface.
measured. L = 3/8″
TYPICAL VALUES FOR RθJA IN STILL AIR L L
Lead Length, L (in)

Mounting
Method 1/8 1/4 1/2 3/4 RθJA
1 52 65 72 85 °C/W BOARD GROUND

2 67 80 87 100 °C/W Mounting Method 2 PLANE
3 50 °C/W
L L
VECTOR PIN MOUNTING

1N5817 1N5818 1N5819
NOTE 3 — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)
TA(A) PD TA(K)
TL(A) TC(A) TJ TC(K) TL(K)
Use of the above model permits junction to lead thermal resistance (Subscripts A and K refer to anode and cathode sides, respectively.)
for any mounting configuration to be found. For a given total lead Values for thermal resistance components are:
length, lowest values occur when one side of the rectifier is brought RθL = 100°C/W/in typically and 120°C/W/in maximum
as close as possible to the heatsink. Terms in the model signify: RθJ = 36°C/W typically and 46°C/W maximum.
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RθS = Thermal Resistance, Heatsink to Ambient
RθL = Thermal Resistance, Lead to Heatsink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
125
IFSM, PEAK SURGE CURRENT (AMP)
115 1 Cycle
20
TL = 70°C
f = 60 Hz
10
105
7.0
5.0 TC = 100°C 95
i F, INSTANTANEOUS FORWARD CURRENT (AMP)
3.0 85
Surge Applied at
2.0 Rated Load Conditions
25°C 75
1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 100
NUMBER OF CYCLES
1.0
0.7 Figure 8. Maximum Non–Repetitive Surge Current
0.5
30
TJ = 125°C
20
0.3
15
0.2 100°C
5.0
3.0
2.0
0.1 75°C
1.0
0.07
0.5
0.05 0.3 25°C
0.2
0.03 0.1 1N5817
1N5818
0.02 0.05 1N5819
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.03
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40

1N5817 1N5818 1N5819
NOTE 4 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carri- 200
er conduction, it is not subject to junction diode forward and reverse re-
covery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model 100
C, CAPACITANCE (pF)
consisting of an ideal diode in parallel with a variable capacitance. (See
70 1N5817
Figure 10.)
Rectification efficiency measurements show that operation will be 1N5818
50
satisfactory up to several megahertz. For example, relative waveform 1N5819
rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency, 30
whereas perfect rectification would yield 0.406 for sine wave inputs. TJ = 25°C
However, in contrast to ordinary junction diodes, the loss in waveform 20 f = 1.0 MHz
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which lowers the dc output
voltage. 10
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40

MOTOROLA
Axial Lead Rectifiers MBR150

MBR160
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers MBR160 is a
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity Motorola Preferred Device
protection diodes.
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER
RECTIFIERS
• Low Power Loss/High Efficiency
1 AMPERE
50, 60 VOLTS
Readily Solderable
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number CASE 59–04
PLASTIC
MAXIMUM RATINGS
Rating Symbol MBR150 MBR160 Unit
RMS Reverse Voltage VR(RMS) 35 42 Volts
Average Rectified Forward Current (2) IO 1 Amp
(VR(equiv) v 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting,
see Note 3, TA = 55°C)
Nonrepetitive Peak Surge Current IFSM 25 (for one cycle) Amps
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg *65 to +150 °C
THERMAL CHARACTERISTICS (Notes 3 and 4)

Maximum Instantaneous Forward Voltage (1) vF Volt
(iF = 0.1 A) 0.550
(iF = 1 A) 0.750
(iF = 3 A) 1.000
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) iR mA
(TL = 25°C) 0.5
(TL = 100°C) 5
Rev 1

MBR150 MBR160
10 10
5.0 TJ = 150°C
7.0 TJ = 150°C 100°C 125°C
2.0

25°C
5.0 1.0
100°C
0.5
0.2 75°C
3.0
0.1
2.0 0.05
0.02
0.01
0.005 25°C
1.0
0.002
0.7 0.001
0 10 20 30 40 50 60 70
Figure 2. Typical Reverse Current*
0.3 *The curves shown are typical for the highest voltage device in the volt-
age grouping. Typical reverse current for lower voltage selections can
0.2 be estimated from these same curves if VR is sufficiently below rated VR.
5.0
0.1 SQUARE
POWER DISSIPATION (WATTS)

PF(AV) , AVERAGE FORWARD
4.0
WAVE
0.07
0.05 3.0
dc
p
0.03 2.0 5
10
0.02 IPK/IAV = 20
1.0
0 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0
Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation
1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE
0.5
0.3 ZθJL(t) = ZθJL • r(t)

0.2
(NORMALIZED)

0.07
t1
0.05
where
0.03 ∆TJL = the increase in junction temperature above the lead temperature
0.02 r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

MBR150 MBR160
90 200
BOTH LEADS TO HEAT SINK,
80 TJ = 25°C
EQUAL LENGTH
f = 1 MHz
R qJL , THERMAL RESISTANCE,
JUNCTION–TO–LEAD ( °C/W)
70
C, CAPACITANCE (pF)
100
60 80
MAXIMUM 70
50
60
TYPICAL
40 50
40
30
30
20
10 20
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0 10 20 30 40 50 60 70 80 90 100
L, LEAD LENGTH (INCHES) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Steady–State Thermal Resistance Figure 6. Typical Capacitance
NOTE 3 — MOUNTING DATA: Mounting Method 1 Mounting Method 3

Data shown for thermal resistance junction–to–ambient P.C. Board with P.C. Board with
(RθJA) for the mounting shown is to be used as a typical 1–1/2″ x 1–1/2″ 1–1/2″ x 1–1/2″
É
guideline values for preliminary engineering or in case the tie copper surface. copper surface.
É
point temperature cannot be measured.
L L L = 3/8″
Typical Values for RθJA in Still Air

ÉÉÉÉÉÉÉ É
Mounting
g Lead Length, L (in)
É
É
RθJA
Method 1/8 1/4 1/2 3/4 BOARD GROUND
1 52 65 72 85 °C/W PLANE
Mounting Method 2
2 67 80 87 100 °C/W L L
3 — 50 °C/W
ÉÉÉÉÉÉÉÉ VECTOR PIN MOUNTING
NOTE 4 — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads) (Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum.
RθJ = 36°C/W typically and 46°C/W maximum.
TA(A) PD TA(K)
NOTE 5 — HIGH FREQUENCY OPERATION:
TL(A) TC(A) TJ TC(K) TL(K) Since current flow in a Schottky rectifier is the result of ma-
jority carrier conduction, it is not subject to junction diode for-
ward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
Use of the above model permits junction to lead thermal diode in parallel with a variable capacitance. (See Figure 6.)
resistance for any mounting configuration to be found. For a Rectification efficiency measurements show that operation
given total lead length, lowest values occur when one side of will be satisfactory up to several megahertz. For example,
the rectifier is brought as close as possible to the heat sink. relative waveform rectification efficiency is approximately 70
Terms in the model signify: percent at 2 MHz, e.g., the ratio of dc power to RMS power in
TA = Ambient Temperature TC = Case Temperature the load is 0.28 at this frequency, whereas perfect rectifica-
TL = Lead Temperature TJ = Junction Temperature tion would yield 0.406 for sine wave inputs. However, in con-
RθS = Thermal Resistance, Heat Sink to Ambient trast to ordinary junction diodes, the loss in waveform
RθL = Thermal Resistance, Lead to Heat Sink efficiency is not indicative of power loss: it is simply a result
RθJ = Thermal Resistance, Junction to Case of reverse current flow through the diode capacitance, which
PD = Power Dissipation lowers the dc output voltage.

MOTOROLA

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power MBR180
diode. State–of–the–art geometry features epitaxial construction with oxide passiva-
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, MBR190
high–frequency inverters, free wheeling diodes, and polarity protection diodes. MBR1100
• Low Reverse Current MBR1100 is a
• Low Stored Charge, Majority Carrier Conduction Motorola Preferred Device

• Guard–Ring for Stress Protection SCHOTTKY BARRIER
• Low Forward Voltage RECTIFIERS
• 150°C Operating Junction Temperature 1 AMPERE
• High Surge Capacity 70, 80, 90, 100 VOLTS
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max.
for 10 Seconds, 1/16″ from case
CASE 59–04
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part
PLASTIC
number
• Marking: B170, B180, B190, B1100
MAXIMUM RATINGS
Rating Symbol MBR170 MBR180 MBR190 MBR1100 Unit
Peak Repetitive Reverse Voltage VRRM 70 80 90 100 Volts
Average Rectified Forward Current IO 1 Amp
(VR(equiv) v 0.2 VR(dc), RθJA = 50°C/W, P.C. Board Mounting,
see Note 1, TA = 120°C)
(Surge applied at rated load conditions, half–wave, single phase,
60 Hz)
Operating and Storage Junction Temperature Range TJ, Tstg *65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10 ⋅V/ns
THERMAL CHARACTERISTICS (See Note 2)

Thermal Resistance, Junction to Ambient RθJA See Note 1 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage (1) VF Volt
(iF = 1 A, TL = 25°C) 0.79
(iF = 1 A, TL = 100°C) 0.69
(TL = 25°C) 0.5
(TL = 100°C) 5
Rev 1

MBR170 MBR180 MBR190 MBR1100
20 1K
10 400
TJ = 150°C 200 TJ = 150°C
5.0 100
IR , REVERSE CURRENT ( mA)

100°C 40 125°C
2.0 20
25°C
10 100°C
1.0
4.0
0.5 2.0
1.0
0.2 0.4
0.1 0.2
0.1
0.05 0.04
0.02
0.02 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 90 100
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*

*The curves shown are typical for the highest voltage device
in the voltage grouping. Typical reverse current for lower
voltage selections can be estimated from these same
curves if VR is sufficiently below rated VR.
4.0 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 4.0

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
3.0 3.0
SQUARE WAVE
dc dc
2.0 2.0
SQUARE WAVE
1.0 1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0
Figure 3. Current Derating Figure 4. Power Dissipation

(Mounting method 3 per note 1.)
150
100
90
80
70
C, CAPACITANCE (pF)
60 TJ = 25°C
50 fTEST = 1 MHz
40
30
20
15
0 10 20 30 40 50 60 70 80 90 100

NOTE 1 — MOUNTING DATA: NOTE 2 — THERMAL CIRCUIT MODEL:
Data shown for thermal resistance junction–to–ambient (For heat conduction through the leads)
(RθJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the tie RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)
TA(A) PD TA(K)
Typical Values for RθJA in Still Air
Mounting
g Lead Length, L (in) Use of the above model permits junction to lead thermal
RθJA
Method 1/8 1/4 1/2 3/4 resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
1 52 65 72 85 °C/W the rectifier is brought as close as possible to the heat sink.
2 67 80 87 100 °C/W Terms in the model signify:
3 — 50 °C/W TA = Ambient Temperature TC = Case Temperature

RθS = Thermal Resistance, Heat Sink to Ambient
RθL = Thermal Resistance, Lead to Heat Sink
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum.
Mounting Method 3 RθJ = 36°C/W typically and 46°C/W maximum.
Mounting Method 1
P.C. Board with P.C. Board with
NOTE 3 — HIGH FREQUENCY OPERATION:
1–1/2″ x 1–1/2″ 1–1/2″ x 1–1/2″
Since current flow in a Schottky rectifier is the result of ma-
É
copper surface. copper surface.
jority carrier conduction, it is not subject to junction diode for-
É
L L L = 3/8″ ward and reverse recovery transients due to minority carrier
ÉÉÉÉÉÉÉ É
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
É diode in parallel with a variable capacitance. (See Figure 5.)
É
Rectification efficiency measurements show that operation
BOARD GROUND will be satisfactory up to several megahertz. For example,
PLANE relative waveform rectification efficiency is approximately 70
Mounting Method 2
percent at 2.0 MHz, e.g., the ratio of dc power to RMS power
L L
ÉÉÉÉÉÉÉÉ
in the load is 0.28 at this frequency, whereas perfect rectifica-
tion would yield 0.406 for sine wave inputs. However, in con-
trast to ordinary junction diodes, the loss in waveform
VECTOR PIN MOUNTING efficiency is not indicative of power loss: it is simply a result
of reverse current flow through the diode capacitance, which
lowers the dc output voltage.

MOTOROLA
Designer's  Data Sheet 1N5820

Axial Lead Rectifiers 1N5821
1N5822
epitaxial construction with oxide passivation and metal overlap contact. Ideally 1N5820 and 1N5822 are
suited for use as rectifiers in low–voltage, high–frequency inverters, free Motorola Preferred Devices
wheeling diodes, and polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIERS
Mechanical Characteristics: 3.0 AMPERES
• Case: Epoxy, Molded 20, 30, 40 VOLTS
Readily Solderable
• Shipped in plastic bags, 5,000 per bag
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
CASE 267–03
PLASTIC
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM 20 30 40 V
Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (2) IO 3.0 A
VR(equiv) v0.2 VR(dc), TL = 95°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 2)
Ambient Temperature TA 90 85 80 °C
Rated VR(dc), PF(AV) = 0
RθJA = 28°C/W
Non–Repetitive Peak Surge Current IFSM 80 (for one cycle) A
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
(Reverse Voltage applied)
*THERMAL CHARACTERISTICS (Note 2)

* Indicates JEDEC Registered Data for 1N5820–22.
Rev 2

1N5820 1N5821 1N5822
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Maximum Instantaneous Forward Voltage (1) VF V
(iF = 1.0 Amp) 0.370 0.380 0.390
(iF = 3.0 Amp) 0.475 0.500 0.525
(iF = 9.4 Amp) 0.850 0.900 0.950
TL = 25°C 2.0 2.0 2.0
TL = 100°C 20 20 20
* Indicates JEDEC Registered Data for 1N5820–22.
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway The data of Figures 1, 2, and 3 is based upon dc conditions. For use
must be considered when operating this rectifier at reverse voltages in common rectifier circuits, Table 1 indicates suggested factors for
above 0.1 VRWM. Proper derating may be accomplished by use of an equivalent dc voltage to use for conservative design, that is:
equation (1). VR(equiv) = V(FM) F
TA(max) = TJ(max) *
RθJAPF(AV) *
RθJAPR(AV) (1) The factor F is derived by considering the properties of the various
(4)

rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc sup-
(125°C or the temperature at which thermal
ply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA =
PF(AV) = Average forward power dissipation
40°C/W.
RθJA = Junction–to–ambient thermal resistance Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Figures 1, 2, and 3 permit easier use of equation (1) by taking
N
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
reverse power dissipation and thermal runaway into consideration. Step 2. Find TR from Figure 2. Read TR = 108°C
The figures solve for a reference temperature as determined by @ VR = 9.2 V and RθJA = 40°C/W.
equation (2). Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
TR = TJ(max) * RθJAPR(AV)
+ 10 and IF(AV) + 1.0 A.
(2) I (FM)
@
Substituting equation (2) into equation (1) yields: I (AV)
TA(max) = TR * RθJAPF(AV) Step 4. Find TA(max) from equation (3).
*
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient TA(max) = 108 (0.85) (40) = 74°C.
temperature at which thermal runaway occurs or where TJ = 125°C, **Values given are for the 1N5821. Power is slightly lower for the
when forward power is zero. The transition from one boundary condi- 1N5820 because of its lower forward voltage, and higher for the
tion to the other is evident on the curves of Figures 1, 2, and 3 as a 1N5822. Variations will be similar for the MBR–prefix devices, using
difference in the rate of change of the slope in the vicinity of 115°C. PF(AV) from Figure 7.

Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped*†
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) [ 2.0 Vin(PK). †Use line to center tap voltage for Vin.

1N5820 1N5821 1N5822
125 125
20 15 20
TR , REFERENCE TEMPERATURE (°C)

10 15
8.0 10
115 115
8.0
105 105
RqJA (°C/W) = 70 RqJA (°C/W) = 70
95 50 95 50
40 40
28 28
85 85
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30
Figure 1. Maximum Reference Temperature Figure 2. Maximum Reference Temperature

1N5820 1N5821
125 40
20 MAXIMUM
35
15 TYPICAL
115 R qJL , THERMAL RESISTANCE
10 JUNCTION–TO–LEAD (°C/W) 30
8.0
105 25
20
RqJA (°C/W) = 70
95
15
50
10
85 40
BOTH LEADS TO HEAT SINK,
28 5.0 EQUAL LENGTH
75 0
4.0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES)
Figure 3. Maximum Reference Temperature Figure 4. Steady–State Thermal Resistance

1N5822

1N5820 1N5821 1N5822
1.0
The temperature of the lead should be measured using a ther-
LEAD LENGTH = 1/4″
0.5 mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
0.2 generated in the diode as a result of pulsed operation once
(NORMALIZED)
Ppk Ppk
steady–state conditions are achieved. Using the measured val- DUTY CYCLE = tp/t1
tp
ue of TL, the junction temperature may be determined by: PEAK POWER, Ppk, is peak of an
0.1 TIME
TJ = TL + DTJL t1
equivalent square power pulse.
0.05 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where:

∆TJL = the increase in junction temperature above the lead temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
0.01
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
t, TIME (ms)
10 NOTE 3 — APPROXIMATE THERMAL CIRCUIT MODEL

7.0
5.0 SINE WAVE RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)
+
I
Ǌ
(FM)
3.0
I
p (Resistive Load) TA(A) TA(K)
(AV) dc PD
2.0
1.0 Capacitive 5.0 SQUARE WAVE

10
0.7 Loads 20
0.5 Use of the above model permits junction to lead thermal resis-
0.3 tance for any mounting configuration to be found. For a given total
TJ ≈ 125°C lead length, lowest values occur when one side of the rectifier is
0.2 brought as close as possible to the heat sink. Terms in the model
signify:
0.1 TA = Ambient Temperature TC = Case Temperature
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMP) RθS = Thermal Resistance, Heat Sink to Ambient
Figure 6. Forward Power Dissipation 1N5820–22 RθL = Thermal Resistance, Lead to Heat Sink
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respec-
tively.) Values for thermal resistance components are:
RθL = 42°C/W/in typically and 48°C/W/in maximum
RθJ = 10°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max) *
n TJL
where n TJL [
RθJL · PD
Mounting Method 1 Mounting Method 3

P.C. Board where available P.C. Board with
NOTE 2 — MOUNTING DATA copper surface is small. 2–1/2″ x 2–1/2″
É
copper surface.
Data shown for thermal resistance junction–to–ambient (RθJA) L L
ÉÉÉÉÉÉÉ É
for the mountings shown is to be used as typical guideline values
L = 1/2″
for preliminary engineering, or in case the tie point temperature
É
cannot be measured.
É
TYPICAL VALUES FOR RθJA IN STILL AIR
Lead Length, L (in) Mounting Method 2

Mounting
BOARD GROUND
Method 1/8 1/4 1/2 3/4 RθJA L L
ÉÉÉÉÉÉÉÉ
PLANE
1 50 51 53 55 °C/W
2 58 59 61 63 °C/W
VECTOR PUSH–IN
3 28 °C/W
TERMINALS T–28

1N5820 1N5821 1N5822
50 100
IFSM , PEAK HALF–WAVE CURRENT (AMP)

70
30
50
20
TL = 75°C
f = 60 Hz
TJ = 100°C 30
10
20 1 CYCLE
7.0
5.0
SURGE APPLIED AT RATED LOAD CONDITIONS
25°C 10
3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NUMBER OF CYCLES
2.0
Figure 8. Maximum Non–Repetitive Surge
Current
1.0 100
0.7 50
TJ = 125°C
0.5 20
10
100°C
IR , REVERSE CURRENT (mA)
0.3
5.0
0.2
2.0 75°C
1.0
0.1 0.5
0.07 0.2
0.1 25°C
0.05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.05 1N5820
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5821
0.02 1N5822
Figure 7. Typical Forward Voltage 0.01
0 4.0 8.0 12 16 20 24 28 32 36 40
500
1N5820
C, CAPACITANCE (pF)
300

200
1N5821 Since current flow in a Schottky rectifier is the result of majority
TJ = 25°C
f = 1.0 MHz carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
100 stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
70 1N5822 variable capacitance. (See Figure 11.)
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30


MOTOROLA

. . . employing the Schottky Barrier principle in a large area metal–to–silicon MBR330
MBR340
MBR350
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
MBR360
MBR340 and MBR360 are
• Low Power Loss/High Efficiency Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 50, 60 VOLTS
Readily Solderable
part number
• Marking: B320, B330, B340, B350, B360 CASE 267–03
PLASTIC
MAXIMUM RATINGS
Rating Symbol MBR320 MBR330 MBR340 MBR350 MBR360 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 50 60 V
Average Rectified Forward Current, TA = 65°C IO 3.0 A
Non–Repetitive Peak Surge Current (2) IFSM 80 A
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75°C)
Operating and Storage Junction TJ, Tstg *65 to 150°C °C
Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature TJ(pk) 150 °C
(Forward Current applied)
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3) RθJA 28 °C/W

Characteristic Symbol MBR320 MBR330 MBR340 MBR350 MBR360 Unit
Maximum Instantaneous Forward Voltage (1) vF V
(iF = 1.0 Amp) 0.500 0.600
(iF = 3.0 Amp) 0.600 0.740
(iF = 9.4 Amp) 0.850 1.080
Maximum Instantaneous Reverse Current @ Rated dc iR mA
Voltage (1)
TL = 25°C 0.60
TL = 100°C 20
Rev 1

MBR320 MBR330 MBR340 MBR350 MBR360
MBR320, 330 AND 340
20 100
40
20 150°C
I , REVERSE CURRENT (mA)

10
10 4.0
2.0
7.0 1.0 100°C 1000
0.4
5.0 0.2 75°C
0.1 100
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
3.0 0.04
0.02
R
2.0 25°C 0.01 10
TJ = 150°C 25°C
0.004
100°C 0.002
0.001 10
1.0
0 10 20 30 40
0.7 VR REVERSE VOLTAGE (VOLTS)
0.5 *The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selec-
tions can be estimated from these same curves if VR is sufficiently
0.3 below rated VR.
, AVERAGE FORWARD CURRENT (AMPS)

0.2 10
F
0.1 8.0
0.07
6.0
0.05
4.0
0.03
0.02 SQUARE
2.0 dc
WAVE
F (AV)
0.01 0
I
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 20 40 60 80 100 120 140 160 180 200
vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C°)
Figure 11. Typical Forward Voltage Figure 13. Current Derating
(Mounting method #3 per note 1)
, AVERAGE POWER DISSIPATION (WATTS)
2.5 500
SQUARE dc
WAVE 400
RESISTIVE LOAD TJ = 25°C
2.0
I PK
p + 300
C, CAPACITANCE (pF)
(CAPACITIVE LOAD) I AV
1.5
I PK
I AV
+ 5.0 200
10
1.0
TJ = 150°C
20 100 100
90
0.5 80
70
F (AV)
60
50
P
0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50

IF (AV), AVERAGE FORWARD CURRENT (AMPS) VR REVERSE VOLTAGE (VOLTS)
Figure 14. Power Dissipation Figure 15. Typical Capacitance

MBR350 AND 360
20
20
10 TJ = 150°C
TJ = 100°C 75°C 25°C

5.0
10 2.0
100°C
1.0
7.0 0.50
75°C
5.0 0.20
0.10
*The curves shown are typical for the highest voltage
0.05
device in the voltage grouping. Typical reverse current

3.0 for lower voltage selections can be estimated from
0.02
R
these same curves if VR is sufficiently below rated VR.
2.0 0.01
25°C
0.005
0.002
1.0 0 10 20 30 40 50 60 80
VR REVERSE VOLTAGE (VOLTS)
0.7
0.5

5.0
0.3
RATED VR
0.2 Rq JA = 28°C/W
4.0
F
dc
0.1 3.0 SQUARE
WAVE
0.07
2.0
0.05
1.0
0.03 TJ = 150°C
F (AV)
0.02 0
I
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160
vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C°)
Figure 16. Typical Forward Voltage Figure 18. Current Derating Ambient
5.0 300
200 TJ = 25°C
4.0 TJ = 150°C
C, CAPACITANCE (pF)
3.0
SQUARE
100
WAVE
2.0 70
dc
50
1.0
40
F (AV)
0 30
P
0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50

IF (AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Data shown for thermal resistance junction–to–ambient (RθJA)
cannot be measured.
Lead Length, L (in)

Mounting
Method 1/8 1/4 1/2 3/4 RθJA
1 50 51 53 55 °C/W
2 58 59 61 63 °C/W
3 28 °C/W
Mounting Method 1
P.C. Board where available
copper surface is small.
ÉÉÉÉÉÉÉÉÉÉÉ
L L
Mounting Method 2
Vector Push–In
Terminals T–28
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
L L
Mounting Method 3
P.C. Board with
2–1/2″ X 2–1/2″
ÉÉ
copper surface.
ÉÉ L = 1/2’’
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane

MOTOROLA

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide passiva- MBR380
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
MBR390
MBR3100
high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Low Reverse Current
• Low Power Loss/High Efficiency MBR3100 is a
• Guard–Ring for Stress Protection
• 150°C Operating Junction Temperature SCHOTTKY BARRIER
• High Surge Capacity RECTIFIERS
3.0 AMPERES
70, 80, 90, 100 VOLTS
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16″ from case
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part
number
• Marking: B370, B380, B390, B3100 CASE 267–03
PLASTIC
MAXIMUM RATINGS
Rating Symbol MBR370 MBR380 MBR390 MBR3100 Unit
Peak Repetitive Reverse Voltage VRRM 70 80 90 100 V
Average Rectified Forward Current, TA = 100°C IO 3.0 A
Non–Repetitive Peak Surge Current (Surge applied at rated load IFSM 150 A
conditions, half wave, single phase, 60 Hz)
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
(see Note 1, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage* vF V
(iF = 3 Amps, TL = 25°C) 0.79
(iF = 3 Amps, TL = 100°C) 0.69
Maximum Instantaneous Reverse Current @ Rated dc Voltage* iR mA
(TL = 25°C) 0.6
(TL = 100°C) 20
*Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
Rev 1

i , INSTANTANEOUS FORWARD CURRENT (AMPS) 50 1
30 0.5
20
TJ = 150°C

TJ = 150°C 0.2
10
0.1
100°C 125°C
5 0.05
3 25°C
2 0.02
0.01 100°C
1
0.005
0.5 0.002
0.3 0.001
R
0.2
0.0005
0.1 25°C
0.0002
0.05
F
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR REVERSE VOLTAGE (VOLTS)
Figure 21. Typical Forward Voltage Figure 22. Typical Reverse Current*
can be estimated from these curves if VR is sufficient below rated VR.

4
7
3.5
6 3
5
2.5 SQUARE
dc
4 WAVE dc
SQUARE 2
WAVE
3
1.5
2 1
F (AV)
1 0.5
F (AV)
0
I
20 40 60 80 100 120 140 160 180

0 1.0 2.0 3.0 4.0 5.0
TA, AMBIENT TEMPERATURE (°C) IF (AV), AVERAGE FORWARD CURRENT (AMPS)
400
300
C, CAPACITANCE (pF)
200
100 TJ = 25°C
f = 1 MHz
80
50
40
0 20 40 60 80

cannot be measured.
Lead Length, L (in)

Mounting
Method 1/8 1/4 1/2 3/4 RθJA
1 50 51 53 55 °C/W
2 58 59 61 63 °C/W
3 28 °C/W
Mounting Method 1
P.C. Board where available
copper surface is small.
L L
Mounting Method 2
Vector Push–In
Terminals T–28
L L
Mounting Method 3
P.C. Board with
ÉÉ
2–1/2” X 2–1/2”
copper surface.
ÉÉ
ÉÉ
L = 1/2”
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane

MOTOROLA

Power Rectifiers 1N5824
1N5825
suited for use as rectifiers in low–voltage, high–frequency inverters, free– Motorola Preferred Devices
wheeling diodes, and polarity–protection diodes.
SCHOTTKY BARRIER
RECTIFIERS
Mechanical Characteristics: 5.0 AMPERES
• Case: Welded steel, hermetically sealed 20, 30, 40 VOLTS
Readily Solderable
• Polarity: Cathode to Case
• Shipped 50 units per tray
• Marking: 1N5823, 1N5824, 1N5825
CASE 60–01
METAL
*MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM 20 30 40 Volts
Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 Volts
RMS Reverse Voltage VR(RMS) 14 21 28 Volts
Average Rectified Forward Current IO Amp
VR(equiv) v0.2 VR(dc), TC = 75°C
v
15
VR(equiv) 0.2 VR(dc), TL = 80°C 5.0
RθJA = 25°C/W, P.C. Board Mounting, See Note 3)
Rated VR(dc), PF(AV) = 0
RθJA = 25°C/W
Non–Repetitive Peak Surge Current IFSM 500 (for one cycle) Amp
(Surge applied at rated load conditions,
halfwave, single phase 60 Hz)
*THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case RθJC 3.0 °C/W
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%
* Indicates JEDEC Registered Data for 1N5823–1N5825
Rev 1

1N5823 1N5824 1N5825
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
(iF = 3.0 Amp) 0.330 0.340 0.350
(iF = 5.0 Amp) 0.360 0.370 0.380
(iF = 15.7 Amp) 0.470 0.490 0.520
Maximum Instantaneous Reverse Current @ Rated dc Voltage iR mA
TC = 25°C 10 10 10
TC = 100°C 100 125 150
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%
* Indicates JEDEC Registered Data for 1N5823–1N5825
Reverse power dissipation and the possibility of thermal runaway difference in the rate of change of the slope in the vicinity of 115°C.
must be considered when operating this rectifier at reverse voltages The data of Figures 1, 2, and 3 is based upon dc conditions. For use
above 0.1 VRWM. Proper derating may be accomplished by use of in common rectifier circuits, Table 1 indicates suggested factors for
equation (1): an equivalent dc voltage to use for conservative design, i.e.:
TA(max) = TJ(max) *RθJAPF(AV) *
RθJAPR(AV) (1) VR(equiv) = VIN(PK) F (4)
The factor F is derived by considering the properties of the various
ply using a bridge circuit with capacitive filter such that IDC = 10 A
(IF(AV) = 5 A), I(PK)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA =
10°C/W.
reverse power dissipation and thermal runaway into consideration.
N
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
The figures solve for a reference temperature as determined by Step 2. Find TR from Figure 3. Read TR = 113°C
equation (2): @ VR = 9.2 V and RθJA = 10°C/W.
TR = TJ(max) * RθJAPR(AV) (2) Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 5.5 W
Substituting equation (2) into equation (1) yields: I (PK)
+ 10 and IF(AV) + 5 A
* RθJAPF(AV)
@
TA(max) = TR I (AV)
(3)
temperature at which thermal runaway occurs or where TJ = 125°C, @
TA(max) = 113 (10) (5.5) = 58°C.
when forward power is zero. The transition from one boundary condi- **Values given are for the 1N5825. Power is slightly lower for the
tion to the other is evident on the curves of Figures 1, 2, and 3 as a other units because of their lower forward voltage.

Full Wave,
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) [ 2.0 Vin(PK). †Use line to center tap voltage for Vin.

1N5823 1N5824 1N5825
125 125
7.0 7.0
5.0 4.0 5.0
115 4.0
115 3.0
TR , REVERSE TEMPERATURE ( _ C)
3.0
105 105
95 95
Rq JA (°C/W) = 70 Rq JA (°C/W) = 70
85 60 85 60
50 50
40 40
75 75 30
30
25 25
20 20
65 65 15
15 10
10
55 55
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30
VR REVERSE VOLTAGE (VOLTS) VR REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature – 1N5823 Figure 2. Maximum Reference Temperature – 1N5824

125 20
7.0 SINEWAVE
5.0 10
115 4.0 I(PK)
= π (RESISTIVE LOAD)
TR , REVERSE TEMPERATURE ( _C)
3.0 5.0 I(AV)

105 5
2.0 CAPACITIVE 10
LOADS
95 1.0 20 SQUAREWAVE
Rq JA (°C/W) = 70
60 0.5 dc
85
50
0.2
75 40 TJ [ 125°C
30 0.1
65 25
20 0.05
15
10
55 0.02
4.0 5.0 7.0 10 15 20 30 40 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR REVERSE VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT
Figure 3. Maximum Reference Temperature Figure 4. Forward Power Dissipation

1N5825 and MBR5825H, H1
1.0
0.7
0.5
0.3
0.2 ZθJC(t) = r(t) RθJC
0.1 tp
DUTY CYCLE, D = tp/t1
0.07 P(pk) PEAK POWER, Ppk, is peak of an
0.05 t1 equivalent square power pulse.
0.03 DTJC = P(pk) @ RθJC [D = (1–D) @ r(t1 + tp) + r(tp) – r(t1)] where
0.02
DTJC = the increase in junction temperature above the case temperature
r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
t, TIME (ms)

1N5823 1N5824 1N5825
NOTE 2 — FINDING JUNCTION TEMPERATURE NOTE 3 — MOUNTING DATA
Ppk Ppk for the mountings shown is to be used as typical guideline values
DUTY CYCLE, D = tp t1
PEAK POWER, Ppk, is peak of an for preliminary engineering.
tp equivalent square power pulse.
TIME
t1 Lead Length, L (in)
Mounting
Method 1/4 1 RθJA
To determine maximum junction temperature of the diode in a
given situation, the following procedure is recommended: 1 55 60 °C/W
2 65 70 °C/W
The temperature of the case should be measured using a
thermocouple placed on the case at the temperature reference 3 25 °C/W
point (see Note 3). The thermal mass connected to the case is
normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation once MOUNTING METHOD 1 MOUNTING METHOD 3
steady state conditions are achieved. Using the measured value of P.C. Board with
L L
TC, the junction temperature may be determined by: 2–1/2″ x 2–1/2″ copper surface
TJ = TC + TJC
where TJC is the increase in junction temperature above the case
ÉÉÉÉÉÉ É L = 5/8”
É
temperature, it may be determined by:
@ * @
n TJC = Ppk RθJC [D + (1 D) r(t1 + tp) + r(tp) r(t1)] MOUNTING METHOD 2
where
r(t) = normalized value of transient thermal resistance at time, t,
from Figure 5, i.e.,
LÉ
ÉÉÉÉÉÉ É L
r (t1 + tp) = normalized value of transient thermal resistance at

Ȁ
Board Ground
Vector pin mounting
time t1 tp Plane
RθCA
70°C/W
RθLA RθJA RθJC *
RθSA 40°C/W/IN 25°C/W 2°C/W
RθCL RθLK RθSK

0.5°C/W 40°C/W/IN
TAA TLA TJ PD TAK TA
Use of the above model permits calculation of TEMPERATURES THERMAL RESISTANCES

average junction temperature for any mounting TA = Ambient RθCA = Case to Ambient
situation. Lowest values of thermal resistance will TAA = Anode Heat Sink Ambient RθSA = Anode Lead Heat Sink to Ambient
occur when the cathode lead is brought as close as TAK = Cathode Heat Sink Ambient RθSK = Cathode Lead Heat Sink to Ambient
possible to a heat dissipator; as heat conduction TLA = Anode Lead RθLA = Anode Lead
through the anode lead is small. Terms in the model TLK = Cathode Lead RθLK = Cathode Lead
are defined as follows: TJ = Junction RθCL = Case to Cathode Lead
*Case temperature reference is at cathode end. RθJC = Junction to Case
RθJA = Junction to Anode Lead (S bend)
Figure 6. Approximate Thermal Circuit Model

1N5823 1N5824 1N5825
200 1000
IFSM, PEAK HALF–WAVE CURRENT (AMP)

Prior to surge, the rectifier is operated such
700 that TJ = 100°C; VRRM may be applied be-
TJ = 25°C tween each cycle of surge.
100 f = 60 Hz
500
70
100°C
50 300
30 200
20
100
1.0 2.0 5.0 10 20 50 100
10 NUMBER OF CYCLES
7.0 Figure 8. Maximum Surge Capability
5.0
TJ = 1255C
3.0 200
TJ = 125°C
100
2.0
IR, REVERSE CURRENT (mA)
50
100°C
20
1.0
10
75°C
0.7 5
0.5 2
25°C
1 1N5823 – 20 V
0.3 0.5 1N5824 – 30 V
1N5825 – 40 V
0.2 0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 4.0 8.0 12 16 20 24 28 32 36 40

2500
2000 Since current flow in a Schottky rectifier is the result of majority
TJ = 25°C carrier conduction, it is not subject to junction diode forward and
1500
C, CAPACITANCE (pF)

stored charge. Satisfactory circuit analysis work may be performed
1000
variable capacitance. (See Figure 10.)
Rectification efficiency measurements show that operation will
700 be satisfactory up to several megahertz. For example, relative
1N5823
waveform rectification efficiency is approximately 70 per cent at
500 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
1N5823 – 20 V 1N5824
400 1N5824 – 30 V 0.28 at this frequency, whereas perfect rectification would yield
1N5825 – 40 V 0.406 for sine wave inputs. However, in contrast to ordinary
300 1N5825 junction diodes, the loss in waveform efficiency is not indicative of
250 power loss; it is simply a result of reverse current flow through the
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
diode capacitance, which lowers the dc output voltage.
Figure 10. Capacitance

MOTOROLA
SWITCHMODE Power Rectifiers MBR1535CT

. . . using the Schottky Barrier principle with a platinum barrier metal. These
MBR1545CT
• Center–Tap Configuration MBR1545CT is a
• Guardring for Stress Protection Motorola Preferred Device

SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
Mechanical Characteristics: 35 and 45 VOLTS
Readily Solderable 4
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Marking: B1535, B1545 1
1 2
3
2, 4
3 CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS
Rating Symbol MBR1535CT MBR1545CT Unit
Average Rectified Forward Current Per Diode IF(AV) 7.5 7.5 Amps
TC = 105°C (Rated VR) Per Device 15 15
Peak Repetitive Forward Current, TC = 105°C IFRM 15 15 Amps
(Rated VR, Square Wave, 20 kHz) Per Diode
Nonrepetitive Peak Surge Current IFSM 150 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 1.0 1.0 Amp
Operating Junction Temperature TJ *65 to +150 *65 to +150 °C
Storage Temperature Tstg *65 to +175 *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 1000 V/µs

Maximum Thermal Resistance, Junction to Case RθJC 3.0 3.0 °C/W
Maximum Thermal Resistance, Junction to Ambient RθJA 60 60 °C/W

(iF = 7.5 Amps, TC = 125°C) 0.57 0.57
(iF = 15 Amps, TC = 125°C) 0.72 0.72
(iF = 15 Amps, TC = 25°C) 0.84 0.84
(Rated dc Voltage, TC = 125°C) 15 15
(Rated dc Voltage, TC = 25°C) 0.1 0.1
Rev 1

MBR1535CT MBR1545CT
i , INSTANTANEOUS FORWARD CURRENT (AMPS) 50 100
30 TJ = 150°C
20

TJ = 125°C 10
125°C
10
100°C
7.0 75°C 1.0
5.0 75°C
3.0 0.1
25°C
2.0
R
0.01 25°C
1.0
0.7
F
0.5 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
iF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

16 16

RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED
14 14
dc
Rq JC = 3.0° C/W Rq JA = 16° C/W
12 12
Rq JA = 60° C/W
10 10 (NO HEAT SINK)
dc
8.0 8.0
180° SQUARE WAVE 180° SQUARE WAVE
6.0 6.0
dc
4.0 4.0
2.0
F (AV)
2.0
F (AV)
0 0
I
100 110 120 130 140 150 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
14
(RESISTIVE LOAD) 180°C
12 SQUARE
10
I PK
I AV
+p dc
WAVE
8.0
6.0
4.0
2.0
0
F (AV)
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

P


MOTOROLA
SWITCHMODE Dual Schottky MBR2015CTL

Power Rectifiers MBR2030CTL
power diode. State–of–the–art geometry features epitaxial construction with MBR2030CTL is a
oxide passivation and metal overlay contact. Ideally suited for use as rectifiers
in very low–voltage, high–frequency switching power supplies, free wheeling
diodes and polarity protection diodes.
SCHOTTKY BARRIER
• Highly Stable Oxide Passivated Junction RECTIFIERS
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) 20 AMPERES
• 150°C Operating Junction Temperature 15 and 30 VOLTS
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
• High dv/dt Capability
4
• Epoxy Meets UL94, VO at 1/8″ 1
Mechanical Characteristics: 2, 4 1
2
3
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are CASE 221A–06
Readily Solderable TO–220AB
• Marking: B2015, B2030
MAXIMUM RATINGS (Per Leg)
Rating Symbol MBR2015CTL MBR2030CTL Unit
Operating Junction Temperature TJ *65 to +150 °C
Storage Temperature Tstg *65 to +175 °C
THERMAL CHARACTERISTICS (Per Leg)

ELECTRICAL CHARACTERISTICS (Per Leg)

(iF = 10 Amps, TC = 25°C) 0.52
(iF = 10 Amps, TC = 150°C) 0.40
(iF = 20 Amps, TC = 25°C) 0.58
(iF = 20 Amps, TC = 150°C) 0.48
(Rated DC Voltage, TC = 25°C) 5.0
(Rated DC Voltage, TC = 100°C) 40
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
Rev 2

MBR2015CTL MBR2030CTL

100
100 TJ = 150°C
40
20
50 10 TJ = 100°C
4
2
30 1
0.4
R
0.2
20 TJ = 25°C 0.1
150°C TJ = 25°C
0.04
0.02
100°C 0.01
10
0 5 10 15 20 25 30 35
VR REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current (Per Leg)
5
2 16
14 RATED VOLTAGE APPLIED

F
, FORWARD CURRENT (AMPS)

Rq JC = 2°C/W
1 12
10
0.5 8
dc
6
0.3
SQUARE
4 WAVE
0.2
F(AV)
2
I
0.1 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 120 130 140 150 160
vF, INSTANTANEOUS VOLTAGE (VOLTS) TC CASE TEMPERATURE (°C)
Figure 16. Typical Forward Voltage (Per Leg) Figure 18. Current Derating, Case
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
10 8
RATED VOLTAGE APPLIED

9 Rq JA = 16°C/W 7
SQUARE WAVE TJ = 100°C
Rq JA = 60°C/W
8 (N0 HEATSINK) 6 SINE WAVE
+p
7
dc I PK
6 5
I AV SQUARE WAVE
dc
5 4 5
dc
4 3 10
3 20
2
2
1
F (AV)
1
0 0
I
F(AVE)
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

TA, AMBIENT TEMPERATURE (°C) IF(AVG), AVERAGE FORWARD CURRENT (AMPS)
I
Figure 19. Current Derating, Ambient Figure 20. Forward Power Dissipation

MBR2015CTL MBR2030CTL
HIGH FREQUENCY OPERATION 10K
Since current flow in a Schottky rectifier is the result of majority TJ = 25°C
5000
carrier conduction, it is not subject to junction diode forward and f = 1 MHz
reverse recovery transients due to minority carrier injection and 3000
C, CAPACITANCE (pF)
2000
Rectification efficiency measurements show that operation will 1000
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 percent at 500
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
300
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary 200
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow through the 100
diode capacitance, which lowers the dc output voltage. 0.5 1 2 3 5 10 20 30 50
+150 V, 10 mAdc
2 kΩ
VCC 12 Vdc
+
D.U.T.
12 V 100 4 µF
2N2222
2 µs
1 kHz
CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0–10 AMPS
1 CARBON
1N5817
Figure 22. Test Circuit for dv/dt and Reverse Surge Current

MOTOROLA

MBR2045CT
• Guardring for Stress Protection MBR2045CT is a
• Low Forward Voltage Motorola Preferred Device

SCHOTTKY BARRIER
• Epoxy Meets UL94, VO at 1/8″ RECTIFIERS
Mechanical Characteristics: 20 AMPERES
• Case: Epoxy, Molded 35 and 45 VOLTS
Readily Solderable
4
• Marking: B2035, B2045 1
2, 4 1
3 2
3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR) IF(AV) 20 20 Amps
TC = 135°C
Peak Repetitive Forward Current Per Diode Leg IFRM 20 20 Amps
Peak Repetitive Reverse Surge Current IRRM 1.0 1.0 Amp
(2.0 µs, 1.0 kHz) See Figure 11
(iF = 10 Amps, TC = 125°C) 0.57 0.57
(iF = 20 Amps, TC = 125°C) 0.72 0.72
(iF = 20 Amps, TC = 25°C) 0.84 0.84
Rev 2

MBR2035CT MBR2045CT
100 100
TJ = 150°C
TJ = 150°C
70 70
100°C 25°C
50 25°C 50 100°C
30 30
20 20

10 10
7.0 7.0
5.0 5.0
3.0 3.0
2.0 2.0
1.0 1.0
0.7 0.7
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100 200
IFSM , PEAK HALF–WAVE CURRENT (AMPS)
TJ = 150°C
10 125°C
100°C 100
1.0
75°C 70
0.1 50
25°C
0.01 30
0.001 20
0 5.0 10 15 20 25 30 35 40 45 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz
Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability

MBR2035CT MBR2045CT
40 32

35 28
+ p (RESISTIVE LOAD) + p (RESISTIVE LOAD)

I I
PK PK
30 I 24 I
AV AV
25 20
+5
I SQUARE SQUARE
20 (CAPACITIVE LOAD) PK 16
I WAVE WAVE
AV
15 12
10 dc
10 20 8.0
dc
+ 20, 10, 5
I
5.0 4.0 (CAPACITIVE LOAD) PK
I
AV
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W
20 10

SQUARE dc RATED VOLTAGE APPLIED
18 RqJA = 60°C/W
SINE WAVE WAVE
16 8.0
+ p (RESISTIVE LOAD)
RESISTIVE LOAD I
PK
+5
14 I I
(CAPACITIVE LOAD) PK AV
12 I 6.0
AV SQUARE
10
10 WAVE
20
8.0 4.0
6.0
dc
4.0 TJ = 150°C 2.0
+ 20, 10, 5
I
(CAPACITIVE LOAD) PK
2.0 I
AV
0 0
0 4.0 8.0 12 16 20 24 28 32 0 20 40 60 80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C)
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
1.0
0.7
0.5
0.3
0.2
(NORMALIZED)
Ppk Ppk
tp
PEAK POWER, Ppk, is peak of an
0.1 TIME
0.07 t1
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

MBR2035CT MBR2045CT
1500
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and 1000
C, CAPACITANCE (pF)
stored charge. Satisfactory circuit analysis work may be performed 700
variable capacitance. (See Figure 10.) 500
be satisfactory up to several megahertz. For example, relative MAXIMUM
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is TYPICAL
150
power loss; it is simply a result of reverse current flow through the 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
+
D.U.T.
12 V 100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817
Figure 11. Test Circuit for dv/dt and

Reverse Surge Current

MOTOROLA

. . . using the Schottky Barrier principle with a platinum barrier metal. These MBR2070CT
MBR2080CT
• 20 Amps Total (10 Amps Per Diode Leg)
• Guard–Ring for Stress Protection MBR2090CT
•
•
Low Forward Voltage
150°C Operating Junction Temperature MBR20100CT
• Guaranteed Reverse Avalanche MBR2060CT and MBR20100CT
• Epoxy Meets UL94, VO at 1/8″ are Motorola Preferred Devices

• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction SCHOTTKY BARRIER
RECTIFIERS
• Case: Epoxy, Molded 60–100 VOLTS
Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 4
• Marking: B2060, B2070, B2080, B2090, B20100
1
1
2, 4 2
3
3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS PER DIODE LEG

MBR
Rating Symbol Unit
2060CT 2070CT 2080CT 2090CT 20100CT
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Maximum Thermal Resistance — Junction to Case RθJC 2.0 °C/W
— Junction to Ambient RθJA 60
Rev 2

MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT
ELECTRICAL CHARACTERISTICS PER DIODE LEG
MBR
Rating Symbol Unit
2060CT 2070CT 2080CT 2090CT 20100CT
(iF = 10 Amps, TC = 125°C) 0.75
(iF = 10 Amps, TC = 25°C) 0.85
(iF = 20 Amps, TC = 125°C) 0.85
(iF = 20 Amps, TC = 25°C) 0.95

MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT
i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 50
TJ = 150°C
20 10
150°C 125°C

10
100°C
175°C 100°C
5.0 1.0
3.0
TJ = 25°C
0.1
1.0
0.01 25°C
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140
20 20

RATED VOLTAGE APPLIED (HEATSINK)
18 18
RqJC = 2°C/W RqJA = 16°C/W
16 16 (NO HEATSINK)
14 14 RqJA = 60°C/W
12 12 RATED VOLTAGE
10 10 APPLIED
dc dc
8.0 8.0
6.0 6.0
4.0 SQUARE WAVE 4.0 dc
2.0 2.0 SQUARE WAVE
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160 180 200
20
IPK/IAV = 5.0
18 TA = 25°C
IPK/IAV = p
16
14 IPK/IAV = 10
12 dc
10
IPK/IAV = 20
8.0 SQUARE WAVE
6.0
4.0
2.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
AVERAGE CURRENT (AMPS)
Figure 5. Average Power Dissipation and

Average Current

MOTOROLA
SWITCHMODE Power
Dual Schottky Rectifier MBR20200CT
. . . using Schottky Barrier technology with a platinum barrier metal. This
state–of–the–art device is designed for use in high frequency switching power
supplies and converters with up to 48 volt outputs. They block up to 200 volts and
offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz.
• 200 Volt Blocking Voltage SCHOTTKY BARRIER
• Low Forward Voltage Drop RECTIFIER
• Guardring for Stress Protection and High dv/dt Capability 20 AMPERES
(10,000 V/µs) 200 VOLTS
• Dual Diode Construction — Terminals 1 and 3 Must be
Connected for Parallel Operation at Full Rating
• Finish: All External Surfaces Corrosion Resistant and Terminal 1
Leads are Readily Solderable 2, 4 1
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 2
Seconds 3 3
• Shipped 50 units per plastic tube CASE 221A–06

• Marking: B20200 (TO–220AB)


Maximum Instantaneous Forward Voltage (1) (IF = 10 Amps, TC = 25°C) VF 0.9 Volts
(IF = 10 Amps, TC = 125°C) 0.8
(IF = 20 Amps, TC = 25°C) 1.0
(IF = 20 Amps, TC = 125°C) 0.9
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) IR 1.0 mA
DYNAMIC CHARACTERISTICS (PER LEG)

Capacitance (VR = –5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF
Rev 1

MBR20200CT
100 10,000
70
TJ = 150°C
50
1,000
TJ = 150°C
TJ = 125°C
20 100
TJ = 100°C
TJ = 125°C
10 10
7
TJ = 100°C
5 1
TJ = 25°C
2 0.1
TJ = 25°C
1 0.01
0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE CURRENT (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg) Figure 2. Typical Reverse Current (Per Leg)
40 25

TJ = 125°C RATED VOLTAGE
SQUARE
36 WAVE RθJC = 2°C/W
32 10 20
28
dc
24 IPK 15
= 20 SQUARE dc
20 IAV
WAVE
16 10
12
8 5
4
0 0
0 5 10 15 20 25 30 35 90 100 110 120 130 140 150 160
Figure 3. Forward Power Dissipation Figure 4. Current Derating, Case
20 500
RθJA = 16°C/W
RATED VOLTAGE
TJ = 25°C
16 400
C, CAPACITANCE (pF)
12 dc
300
SQUARE
8 WAVE 200
4 100
0 0
0 25 50 75 100 125 150 175 1 2 5 10 20 50 70 100
TA, AMBIENT TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Derating, Ambient Figure 6. Typical Capacitance (Per Leg)

MOTOROLA
Advance Information MBR2515L

. . . employing the Schottky Barrier principle in a large metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use in low voltage, high SCHOTTKY BARRIER
frequency switching power supplies, low voltage converters, OR’ing diodes, RECTIFIER
and polarity protection devices. 25 AMPERES
• Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 15 VOLTS
70°C)
• Highly Stable Oxide Passivated Junction (100°C Operating
Junction Temperature) 4
1
1
Leads are Readily Solderable 4 3
• Lead Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
CASE 221B–03, STYLE 1
• Shipped 50 Units Per Plastic Tube (TO–220AC)
• Marking: B2515L

Rating Symbol Max Unit
Non Repetitive Peak Surge Current IFSM 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 1.0 Amps
(IF = 25 Amps, TJ = 25°C) 0.45
(IF = 25 Amps, TJ = 70°C) 0.42
(IF = 19 Amps, TJ = 70°C) 0.28
(Rated DC Voltage, TJ = 25°C) 15
(Rated DC Voltage, TJ = 70°C) 200

MOTOROLA

. . . employing the Schottky Barrier principle in a large metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide
MBR2535CTL
passivation and metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and polarity
protection diodes.
• Very Low Forward Voltage (0.55 V Maximum @ 25 Amps) SCHOTTKY BARRIER
• Matched Dual Die Construction (12.5 A per Leg or 25 A per RECTIFIER
Package) 25 AMPERES
• Guardring for Stress Protection 35 VOLTS
• Highly Stable Oxide Passivated Junction (125°C Operating
Junction Temperature)
4
1
Leads are Readily Solderable 2, 4
1
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 3 2
Seconds 3
• Marking: B2535L (TO–220AC)

Working Peak Reverse Voltage VRWM 35
DC Blocking Voltage VR 35
Average Rectified Forward Current (Rated VR) TC = 110°C IF(AV) 12.5 Amps
Controlled Avalanche Energy Waval 20 mJ
(IF = 25 Amps, TJ = 25°C) 0.55
(IF = 12.5 Amps, TJ = 25°C) 0.47
(IF = 12.5 Amps, TJ = 125°C) 0.41
Rev 1

MBR2535CTL
50 1000

TJ = 125°C
100
TJ = 100°C
20
10
TJ = 125°C
10 1
TJ = 25°C
0.1
5
TJ = 25°C 0 5 10 15 20 25 30 35
2 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current, Per Leg

40
TJ = 125°C
35
0.5
SQUARE
30 WAVE
25 SINE WAVE
(RESISTIVE LOAD)
0.2 20
dc
15
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 10
vF, INSTANTANEOUS VOLTAGE (VOLTS) 5
Figure 1. Typical Forward Voltage, Per Leg 0
0 5 10 15 20 25 30 35 40
Figure 3. Forward Power Dissipation, Per Leg
32 20
RθJA = 16°C/W
(RATED Vr APPLIED)
RθJC = 2.0°C/W 18
28
16
24
14
20 12
16 dc 10 dc
SQUARE 8 SQUARE
12 WAVE
6
8
4
4 2
0 0
85 95 105 115 125 0 25 50 75 100 125
Figure 4. Current Derating Figure 5. Current Derating Ambient, Per Leg

MOTOROLA

MBR2545CT
• Guardring for Stress Protection MBR2545CT is a
• Low Forward Voltage Motorola Preferred Device

SCHOTTKY BARRIER
Mechanical Characteristics: RECTIFIERS
• Case: Epoxy, Molded 30 AMPERES
• Weight: 1.9 grams (approximately) 35 and 45 VOLTS
Readily Solderable
4
• Marking: B2535, B2545
1
2, 4 1
2
3 3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS
TC = 130°C
Peak Repetitive Forward Current Per Diode Leg IFRM 30 30 Amps
Nonrepetitive Peak Surge Current per Diode Leg IFSM 150 150 Amps
(2.0 µs, 1.0 kHz)
THERMAL CHARACTERISTICS PER DIODE LEG


(iF = 30 Amps, TC = 125°C) 0.73 0.73
(iF = 30 Amps, TC = 25°C) 0.82 0.82
Rev 1

MBR2535CT MBR2545CT

100 200
70 100
50 40 TJ = 150°C
20

TJ = 125°C 10 125°C
30
20 100°C 4.0 100°C
25°C 2.0
1.0
10 75°C
0.4
7.0 0.2
5.0 0.1
3.0 0.04
0.02 25°C
2.0 0.01
0.004
1.0 0.002
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
32 32

RATED VR APPLIED
28 28
dc dc RqJA = 16°C/W
24 24 (With TO–220 Heat Sink)
SQUARE WAVE RqJA = 60°C/W
20 20 (No Heat Sink)
16 16 SQUARE WAVE
12 12
RATED VOLTAGE APPLIED dc
8.0 RqJC = 1.5°C/W
8.0
4.0 4.0
SQUARE WAVE
0 0
110 120 130 140 150 0 20 40 60 80 100 120 140 160

32
+p
I SQUARE WAVE
28 (RESISTIVE LOAD) PK
I
AV
24
+ 5.0
I
20 (CAPACITATIVE LOAD) PK dc
I
AV
16
10
12
20
8.0
TJ = 125°C
4.0
0
0 4.0 8.0 12 16 20 24 28 32 36 40
IF, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Forward Power Dissipation

MOTOROLA
Advance Information MBR3045ST

. . . using the Schottky Barrier principle with a platinum barrier metal. This
state–of–the–art device has the following features:
• Dual Diode Construction — Terminals 1 and 3 May Be
Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER
RECTIFIER
• 45 V Blocking Voltage
30 AMPERES
• Low Forward Voltage Drop 45 VOLTS
4
3
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 1 2
1
2
Seconds 3
• Shipped 50 Units Per Plastic Tube
CASE 221A–06, STYLE 6
• Marking: B3045
(TO–220AB)
MAXIMUM RATINGS
Average Rectified Current Per Device IF(AV) 30 Amps
TC = 130°C Per Diode 15
Peak Repetitive Forward Current, Per Diode (Square Wave, VR = 45 V, 20 kHz) IFRM 30 Amps
Peak Repetitive Reverse Current, Per Diode (2.0 µs, 1.0 kHz) IRRM 2.0 Amps
Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C
Voltage Rate of Change (Rated VR) dV/dt 10000 V/µs


Instantaneous Forward Voltage (1) (IF = 30 Amp, TC = 25°C) VF 0.76 Volts
(IF = 30 Amp, TC = 125°C) 0.72
(IF = 20 Amp, TC = 125°C) 0.60
Instantaneous Reverse Current (1) (VR = 45 Volts, TC = 25°C) IR 0.2 mA
(VR = 45 Volts, TC = 125°C) 40
Rev 1

MOTOROLA
SWITCHMODE Power Rectifiers MBR735

MBR745
MBR745 is a
• Guaranteed Reverse Avalanche SCHOTTKY BARRIER
7.5 AMPERES
Mechanical Characteristics: 35 and 45 VOLTS
1
3 1, 4
3
CASE 221B–03
TO–220AC
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR) IF(AV) 7.5 7.5 Amps
TC = 105°C
Peak Repetitive Forward Current IFRM 15 15 Amps
(2.0 µs, 1.0 kHz)
Maximum Thermal Resistance, Junction to Ambient RθJA 60 60 °C/W
(iF = 7.5 Amps, TC = 125°C) 0.57 0.57
(iF = 15 Amps, TC = 125°C) 0.72 0.72
(iF = 15 Amps, TC = 25°C) 0.84 0.84
Rev 1

MBR735 MBR745

50 100
30 TJ = 125°C
20 TJ = 150°C
10

75°C 25°C
125°C
10
7.0 100°C
1.0
5.0
75°C
3.0 0.1
2.0
0.01 25°C
1.0
0.7
0.5 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
8.0 8.0

7.0 7.0
dc dc
RqJA = 16°C/W
6.0 6.0
RqJA = 60°C/W
5.0 (No Heat Sink)
5.0
180° SQUARE WAVE
4.0 4.0
180° SQUARE WAVE
3.0 3.0
dc
2.0 2.0
RqJC = 3.0°C/W
1.0 1.0
0 0
100 110 120 130 140 150 0 20 40 60 80 100 120 140 160
7.0
180° X
PF(AV) , AVERAGE FORWARD POWER
6.0 180°
DISSIPATION (WATTS)
5.0 dc
4.0
3.0
2.0
1.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

MOTOROLA

MBR1045
MBR1045 is a
10 AMPERES
Mechanical Characteristics: 20 to 45 VOLTS
• Marking: B1035, B1045
1
3 1, 4
3
CASE 221B–03
TO–220AC
PLASTIC
MAXIMUM RATINGS
TC = 135°C
(iF = 10 Amps, TC = 125°C) 0.57 0.57
(iF = 20 Amps, TC = 125°C) 0.72 0.72
(iF = 20 Amps, TC = 25°C) 0.84 0.84
Rev 2

MBR1035 MBR1045
100 100
TJ = 150°C
TJ = 150°C
70 70
100°C 25°C
50 25°C 50 100°C
30 30
20 20

10 10
7.0 7.0
5.0 5.0
3.0 3.0
2.0 2.0
1.0 1.0
0.7 0.7
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100 200
TJ = 150°C
10 125°C
100°C 100
1.0
75°C 70
0.1 50
25°C
0.01 30
0.001 20
0 5.0 10 15 20 25 30 35 40 45 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MBR1035 MBR1045
20 16

14
+ p (RESISTIVE LOAD) + p (RESISTIVE LOAD)

I I
PK PK
15 I 12 I
AV AV
10
+5
I SQUARE SQUARE
PK 8.0
10 (CAPACITIVE LOAD) WAVE WAVE
I
AV
6.0
10 dc
5.0 20 4.0
dc
+ 20, 10, 5
I
2.0 (CAPACITIVE LOAD) PK
I
AV
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W
10 5.0

SQUARE dc RATED VOLTAGE APPLIED
9.0 RqJA = 60°C/W
SINE WAVE WAVE
8.0 4.0
RESISTIVE LOAD I
PK
+5
7.0 I I
(CAPACITIVE LOAD) PK AV
6.0 I 3.0
AV SQUARE
10
5.0 WAVE
20
4.0 2.0
3.0
dc
2.0 TJ = 150°C 1.0
+ 20, 10, 5
I
1.0 I
AV
0 0
0 2.0 4.0 6.0 8.0 10 12 14 16 0 20 40 60 80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C)
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
1.0
0.7
0.5
0.3
0.2
(NORMALIZED)
Ppk Ppk
tp
0.1 TIME
0.07 t1
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

MBR1035 MBR1045
1500
HIGH FREQUENCY OPERATION
C, CAPACITANCE (pF)
be satisfactory up to several megahertz. For example, relative MAXIMUM
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is TYPICAL
150
SCHOTTKY CHIP — View A–A

SCHOTTKY CHIP (See View A–A) ANODE 3 ALUMINUM CONTACT METAL
PLATINUM BARRIER METAL OXIDE
ALUMINUM WIRE 1
PASSIVATION
GUARDRING
Motorola builds quality and reliability into its Schottky Rectifiers.

CATHODE First is the chip, which has an interface metal between the
barrier metal and aluminum–contact metal to eliminate any
possible interaction between the two. The indicated guardring
SOLDER DIPPED
prevents dv/dt problems, so snubbers are not mandatory. The
COPPER LEADS
guardring also operates like a zener to absorb over–voltage
4 transients.
Second is the package. The Schottky chip is bonded to the
copper heat sink using a specially formulated solder. This gives the
COPPER UL RATED EPOXY unit the capability of passing 10,000 operating thermal–fatigue
cycles having a DTJ of 100°C. The epoxy molding compound is
rated per UL 94, V0 @ 1/8″. Wire bonds are 100% tested in
assembly as they are made.
Figure 11. Schottky Rectifier Third is the electrical testing, which includes 100% dv/dt at 1600
V/ms and reverse avalanche as part of device characterization.
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
+
12 V 100
2N2222 4.0 µF
D.U.T.
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817


MOTOROLA

. . . using the Schottky Barrier principle with a platinum barrier metal. These MBR1070
MBR1080
•
•
Guard–Ring for Stress Protection
MBR1090
MBR10100
Low Forward Voltage
• Guaranteed Reverse Avalanche MBR1060 and MBR10100 are
SCHOTTKY BARRIER
RECTIFIERS
• Low Stored Charge Majority Carrier Conduction
10 AMPERES
Mechanical Characteristics: 60 to 100 VOLTS
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are 4
Readily Solderable
1
• Marking: B1060, B1070, B1080, B1090, B10100 3 1, 4 CASE 221B–03
3 TO–220AC
MAXIMUM RATINGS
MBR
Rating Symbol Unit
1060 1070 1080 1090 10100
Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 Amps
(iF = 10 Amps, TC = 125°C) 0.7
(iF = 10 Amps, TC = 25°C) 0.8
(iF = 20 Amps, TC = 125°C) 0.85
(iF = 20 Amps, TC = 25°C) 0.95
Rev 2


50
TJ = 150°C
20 10
150°C 125°C

10
100°C
175°C 100°C
5.0 1.0
3.0
TJ = 25°C
0.1
1.0
0.01 25°C
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140
VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
10 10

9.0 9.0 (HEATSINK)
RqJA = 16°C/W
8.0 8.0 (NO HEATSINK)
7.0 SQUARE WAVE 7.0 RqJA = 60°C/W
6.0 6.0 RATED VOLTAGE

dc
5.0 5.0 APPLIED
4.0 4.0 dc dc
3.0 3.0
RqJC = 2°C/W
2.0 2.0
1.0 1.0 SQUARE WAVE
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160 180 200

10
9.0 TA = 25°C
8.0
7.0 IPK/IAV = p
6.0 IPK/IAV = 5.0
5.0
IPK/IAV = 10 dc
4.0 IPK/IAV = 20
3.0
SQUARE WAVE
2.0
1.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE CURRENT (AMPS)

MOTOROLA

MBR1645
MBR1645 is a
RECTIFIERS
• Case: Epoxy, Molded 35 and 45 VOLTS
Readily Solderable
• Marking: B1635, B1645
1
3 1, 4
3
CASE 221B–03
TO–220AC
MAXIMUM RATINGS
TC = 125°C
(2.0 µs, 1.0 kHz)
(iF = 16 Amps, TC = 125°C) 0.57 0.57
(iF = 16 Amps, TC = 25°C) 0.63 0.63
Rev 1

MBR1635 MBR1645

100 200
70 100
50 40 TJ = 150°C
20

TJ = 125°C 10 125°C
30
20 100°C 4.0 100°C
25°C 2.0
1.0
10 75°C
0.4
7.0 0.2
5.0 0.1
3.0 0.04
0.02 25°C
2.0 0.01
0.004
1.0 0.002
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
20 16

RATED VR APPLIED
18 14
16 dc RqJA = 16°C/W
dc 12 (With TO–220 Heat Sink)
14 RqJA = 60°C/W
12 SQUARE WAVE 10 (No Heat Sink)
10 8.0 SQUARE WAVE
8.0 6.0
RATED VOLTAGE APPLIED dc
6.0 RqJC = 1.5°C/W
4.0
4.0
2.0 2.0
SQUARE WAVE
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160

PF(AVE) , AVERAGE POWER DISSIPATION (WATTS)
16
+p
I SQUARE WAVE
14 (RESISTIVE LOAD) PK
I
AV
12
+ 5.0
I
10 (CAPACITATIVE LOAD) PK dc
I
AV
8.0
10
6.0
20
4.0
TJ = 125°C
2.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

MOTOROLA
SWITCHMODE
Schottky Power Rectifier MBRF1545CT
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device
a large area metal–to–silicon power diode. State–of–the–art geometry features
suited for use as rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER
RECTIFIER
15 AMPERES
• Very Low Forward Voltage Drop 45 VOLTS
• Matched Dual Die Construction
• Excellent Ability to Withstand Reverse Avalanche Energy
Transients
• Epoxy Meets UL94, VO at 1/8″ 1 1
• Electrically Isolated. No Isolation Hardware Required. 2 2
3
• UL Recognized File #E69369(1) 3
Mechanical Characteristics CASE 221D–02
• Case: Epoxy, Molded ISOLATED TO–220
Seconds
• Marking: B1545

(Rated VR), TC = 105°C Total Device 15
Peak Repetitive Forward Current, TC = 105°C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 15 Amps
Non–repetitive Peak Surge Current IFSM 150 Amps
Operating Junction and Storage Temperature TJ, Tstg – 65 to +150 °C
RMS Isolation Voltage (t = 1 second, R.H. ≤ 30%, TA = 25°C)(2) Per Figure 3 Viso1 4500 Volts
Per Figure 4(1) Viso2 3500
Per Figure 5 Viso3 1500

Maximum Thermal Resistance, Junction to Case RθJC 4.1 °C/W
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 seconds TL 260 °C
(1) UL Recognized mounting method is per Figure 4.
(2) Proper strike and creepage distance must be provided.
Rev 1

MBRF1545CT
(iF = 15 Amp, TC = 25°C) 0.84
(iF = 15 Amp, TC = 125°C) 0.72
(iF = 7.5 Amp, TC = 125°C) 0.57
50 100
30 TJ = 150°C
TJ = 125°C

20 10
125°C
10 100°C
75°C 1.0
7.0
5.0 75°C
3.0 25°C 0.1
2.0
0.01 25°C
1.0
0.7
0.5 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50

MBRF1545CT
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED MOUNTED MOUNTED
FULLY ISOLATED FULLY ISOLATED FULLY ISOLATED
CLIP PACKAGE CLIP PACKAGE PACKAGE
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
HEATSINK HEATSINK HEATSINK
0.110″ MIN
Figure 3. Clip Mounting Position Figure 4. Clip Mounting Position Figure 5. Screw Mounting Position
for Isolation Test Number 1 for Isolation Test Number 2 for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION**
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK
6a. Screw–Mounted 6b. Clip–Mounted

Figure 6. Typical Mounting Techniques
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting
hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.

MOTOROLA
SWITCHMODE
RECTIFIER
20 AMPERES
Transients
3
Seconds
• Marking: B2045

Peak Repetitive Forward Current Per Diode Leg IFRM 20 Amps
Rev 1

MBRF2045CT
(iF = 20 Amp, TC = 25°C) 0.84
(iF = 20 Amp, TC = 125°C) 0.72
(iF = 10 Amp, TC = 125°C) 0.57

100 100
70 70
50 50 TJ = 150°C
TJ = 150°C
30 100°C 30
20 25°C
20
10 10
7.0 7.0 100°C
5.0 5.0 25°C
3.0 3.0
2.0 2.0
1.0 1.0
0.7 0.7
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100 200
I FSM , PEAK HALF-WAVE CURRENT (AMPS)
TJ = 150°C
TJ = 125°C, VRRM MAY BE
10 125°C APPLIED BETWEEN EACH

100 CYCLE OF SURGE
100°C
1.0
70
75°C
0.1 50
25°C
0.01
30
0.001 20
0 10 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MBRF2045CT
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE
RECTIFIER
20 AMPERES
Transients
3
Seconds
• Marking: B2060

RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C)(2) Per Figure 3 Viso1 4500 Volts
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C
Rev 1

MBRF2060CT
(iF = 10 Amp, TC = 25°C) 0.85
(iF = 10 Amp, TC = 125°C) 0.75
(iF = 20 Amp, TC = 25°C) 0.95
(iF = 20 Amp, TC = 125°C) 0.85
50
TJ = 150°C
150°C
20 10

TJ = 125°C
100°C
10
TJ = 100°C
5.0 1.0
TJ = 25°C
3.0
0.1
1.0
0.01 TJ = 25°C
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120

MBRF2060CT
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE
RECTIFIER
20 AMPERES
Transients
3
Seconds
• Marking: B20100

Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 100 Volts
Average Rectified Forward Current 10
IF(AV) Amps
Peak Repetitive Forward Current
IFRM 20 Amps
Non–repetitive Peak Surge Current
IFSM 150 Amps

RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C)(2) Per Figure 3 Viso1 4500
Per Figure 4(1) Viso2 3500 Volts
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C
Rev 1

MBRF20100CT
Maximum Instantaneous Forward Voltage (3)
(iF = 10 Amp, TC = 25°C) 0.85
(iF = 10 Amp, TC = 125°C) vF 0.75 Volts
(iF = 20 Amp, TC = 25°C) 0.95
(iF = 20 Amp, TC = 125°C) 0.85
Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, TC = 25°C) iR 0.15 mA
50
TJ = 150°C
150°C
20 10

TJ = 125°C
10
100°C TJ = 100°C
5.0 1.0
TJ = 25°C
3.0
0.1
1.0
0.01 TJ = 25°C
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120

MBRF20100CT
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE
RECTIFIER
20 AMPERES
• Very Low Forward Voltage Drop 150 and 200 VOLTS
Transients
3
• UL Recognized File #E69369 3
Seconds
• Marking: B20200



Operating Junction Temperature and Storage Temperature TJ, Tstg – 65 to +150 °C

Rev 1

MBRF20200CT
(iF = 10 Amp, TC = 25°C) 0.9
(iF = 10 Amp, TC = 125°C) 0.8
(iF = 20 Amp, TC = 25°C) 1.0
(iF = 20 Amp, TC = 125°C) 0.9
DYNAMIC CHARACTERISTICS, PER LEG

Capacitance (VR = – 5.0 V, TC = 25°C, Freq. = 1.0 MHz) CT 500 pF
100 10,000
70 TJ = 150°C
1,000
50
TJ = 125°C
TJ = 150°C 100
TJ = 100°C
20 10
TJ = 125°C
1
10
7
0.1
TJ = 100°C
5 TJ = 25°C
0.01
0 20 40 60 80 100 120 140 160 180 200
TJ = 25°C VR, REVERSE CURRENT (VOLTS)
2
1
0.2 0.4 0.6 0.8 1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg)

MBRF20200CT
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
Figure 3. Screw or Clip Mounting Position Figure 4. Clip Mounting Position Figure 5. Screw Mounting Position
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK
Figure 6a. Screw–Mounted Figure 6b. Clip–Mounted
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs
will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding
10 in . lbs of mounting torque under any mounting conditions.

MOTOROLA
SWITCHMODE
RECTIFIER
25 AMPERES
Transients
3
Seconds
• Marking: B2545

Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 45 Volts
Average Rectified Forward Current 12.5
IF(AV) Amps
Peak Repetitive Forward Current
IFRM 25 Amps
Non–repetitive Peak Surge Current
IFSM 150 Amps
RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C)(2) Per Figure 3 Viso1 4500
Per Figure 4(1) Viso2 3500 Volts
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C
Rev 1

MBRF2545CT
Maximum Instantaneous Forward Voltage (3) 0.7
(iF = 12.5 Amps, TC = 25°C) 0.62
vF Volts
(iF = 12.5 Amps, TC = 125°C)
Maximum Instantaneous Reverse Current (3) 0.2
iR mA
(Rated DC Voltage, TC = 125°C)
100 100
70
50

TJ = 125°C 10 TJ = 125°C
20 25°C
10
100°C 100°C
7.0 1.0
5.0
85°C
2.0
0.1
1.0
0.7
0.5 25°C
0.01
0.2
0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50

MBRF2545CT
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE
Schottky Power Rectifier MBRF745
RECTIFIER
7.5 AMPERES
Transients
• Electrically Isolated. No Isolation Hardware Required.
• UL Recognized File #E69369(1) 1 2
• Weight: 1.9 grams (approximately) CASE 221E–01

• Finish: All External Surfaces Corrosion Resistant and Terminal ISOLATED TO–220
Seconds
• Marking: B745
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR), TC = 105°C IF(AV) 7.5 Amps
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 105°C IFRM 15 Amps
Lead Temperature for Soldering TL 260 °C
Purposes: 1/8″ from Case for 5 Seconds
Rev 1

MBRF745
(iF = 15 Amp, TC = 25°C) 0.84
(iF = 15 Amp, TC = 125°C) 0.72
(iF = 7.5 Amp, TC = 125°C) 0.57
50 100
30 TJ = 150°C

20 TJ = 125°C 10
125°C
10 100°C
75°C 1
7
5 75°C
3 25°C 0.1
2
0.01 25°C
1
0.7
0.5 0.001
0.2 0.4 0.6 0.8 1 1.2 0 10 20 30 40 50

MBRF745
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE
Schottky Power Rectifier MBRF1045
RECTIFIER
10 AMPERES
Transients
• UL Recognized File #E69369(1) 1 2
• Weight: 1.9 grams (approximately) CASE 221E–01

• Finish: All External Surfaces Corrosion Resistant and Terminal ISOLATED TO–220
Seconds
• Marking: B1045
MAXIMUM RATINGS
Average Rectified Forward Current (Rated VR), TC = 135°C IF(AV) 10 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Figure 6 IRRM 1.0 Amp
Rev 1

MBRF1045
(iF = 20 Amp, TC = 25°C) 0.84
(iF = 20 Amp, TC = 125°C) 0.72
(iF = 10 Amp, TC = 125°C) 0.57

100 100
70 70
50 TJ = 150°C 50 TJ = 150°C
30 100°C 30 100°C
20 20 25°C
25°C
10 10
7 7
5 5
3 3
2 2
1 1
0.7 0.7
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 0.2 0.4 0.6 0.8 1 1.2 1.4
100 200
I FSM , PEAK HALF-WAVE CURRENT (AMPS)
TJ = 150°C
TJ = 125°C, VRRM MAY BE APPLIED
10 125°C
BETWEEN EACH CYCLE OF SURGE
100°C 100
1
75°C 70
0.1 50
25°C
0.01
30
0.001 20
0 10 20 30 40 50 1 2 3 5 7 10 20 30 50 70 100

MBRF1045
HIGH FREQUENCY OPERATION 1500
Since current flow in a Schottky rectifier is the result of

majority carrier conduction, it is not subject to junction diode 1000
forward and reverse recovery transients due to minority
MAXIMUM
C, CAPACITANCE (pF)
carrier injection and stored charge. Satisfactory circuit 700
analysis work may be performed by using a model consisting
500
of an ideal diode in parallel with a variable capacitance. (See
Figure 5.)
TYPICAL
Rectification efficiency measurements show that operation
300
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2.0 MHz, e.g., the ratio of dc power to RMS power 200
in the load is 0.28 at this frequency, whereas perfect
150
rectification would yield 0.406 for sine wave inputs. However, 0.05 0.1 0.2 0.5 1 2 5 10 20 50
in contrast to ordinary junction diodes, the loss in waveform VR, REVERSE VOLTAGE (VOLTS)
efficiency is not indicative of power loss; it is simply a result of
reverse current flow through the diode capacitance, which Figure 5. Capacitance
lowers the dc output voltage.
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
12 V D.U.T. +
100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT
2N6277
AMPLITUDE 100
ADJUST CARBON
0 – 10 AMPS
1.0 CARBON
1N5817
Figure 6. Test Circuit for dv/dt and Reverse Surge Current

MBRF1045
0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK

MOTOROLA
SWITCHMODE Power Rectifiers MBR3035PT

MBR3045PT
MBR3045PT is a
• Dual Diode Construction — Terminals 1 and 3 may be Connected for Motorola Preferred Device
Parallel Operation at Full Rating

SCHOTTKY BARRIER
• 150°C Operating Junction Temperature 30 AMPERES
• Guaranteed Reverse Avalanche 35 to 45 VOLTS
4
Readily Solderable
1
• Marking: B3035, B3045 1 2
2
3
4 CASE 340D–02
3
MAXIMUM RATINGS
Rating Symbol Maximum Unit
Peak Repetitive Reverse Voltage MBR3035PT VRRM 35 Volts
Working Peak Reverse Voltage MBR3045PT VRWM 45
Average Rectified Forward Current Per Device IF(AV) 30 Amps
(Rated VR) TC = 105°C Per Diode 15
Peak Repetitive Forward Current, Per Diode (Rated VR, Square Wave, 20 kHz) IFRM 30 Amps
Peak Repetitive Reverse Current, Per Diode (2.0 µs, 1.0 kHz) See Figure 6 IRRM 2.0 Amps


Instantaneous Forward Voltage (1) vF Volts
(iF = 20 Amps, TC = 125°C) 0.60
(iF = 30 Amps, TC = 125°C) 0.72
(iF = 30 Amps, TC = 25°C) 0.76
Instantaneous Reverse Current (1) iR mA
Rev 2

MBR3035PT MBR3045PT
100
50 100
30 TJ = 150°C

20 TJ = 150°C
25°C 125°C
10 10
5.0 100°C
3.0 1.0 75°C
2.0
1.0
0.1
0.5
0.3 25°C
0.2 0.01
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 45 50

20 20
+ 20, 10, 5
I
I
PK (CAPACITIVE LOAD) PK SINE WAVE
I I RESISTIVE LOAD
AV AV
15 15
SQUARE SQUARE
WAVE WAVE
10 10
dc
dc
5.0 5.0 TJ = 125°C
+ 20, 10, 5
I
I
AV
0 0
60 70 80 90 100 110 120 130 140 150 160 0 5.0 10 15 20 25 30 35 40
Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg)
+150 V, 10 mAdc
2.0 kΩ
3000
VCC 12 Vdc
2000
C, CAPACITANCE (pF)
D.U.T. +
12 V 100 4.0 µF
2N2222
1000
900 2.0 µs
800 1.0 kHz
700
CURRENT 2N6277
600
AMPLITUDE 100 W
500 CARBON
ADJUST
400 0–10 AMPS
1.0 CARBON
300
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1N5817
Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse

Current

MOTOROLA
Advance Information MBR4045PT

The SWITCHMODE power rectifier employs the use of the Schottky Barrier
principle with a Platinum barrier metal. This state-of-the-art device has the
following features: SCHOTTKY BARRIER
• Dual Diode Construction — Terminals 1 and 3 May Be RECTIFIER
Connected for Parallel Operation at Full Rating 40 AMPERES
• 45 Volt Blocking Voltage 45 VOLTS
(> 10 V/ns)
1
• Case: Epoxy, Molded 2,4
• Weight: 4.3 grams (approximately) 3 1
Seconds CASE 340D–02
• Marking: B4045
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM 45 Volt
Average Rectified Forward Current — Per Diode IF(AV) 20 Amp
(Rated VR) @ TC = 125°C — Per Device 40
Peak Repetitive Forward Current, Per Diode IFRM 40 Amp
(Rated VR, Square Wave, 20 kHz) @ TC = 90°C
Non Repetitive Peak Surge Current IFSM 400 Amp
Peak Repetitive Reverse Current (2.0 µs, 1.0 kHz) IRRM 2.0 Amp
Voltage Rate of Change dv/dt 10,000 V/µs
Rev 3

MBR4045PT
Instantaneous Forward Voltage (1) VF Volts
@ IF = 20 Amps, TC = 25°C 0.70
@ IF = 20 Amps, TC = 125°C 0.60
@ IF = 40 Amps, TC = 25°C 0.80
@ IF = 40 Amps, TC = 125°C 0.75
Instantaneous Reverse Current (1) IR mA
@ Rated DC Voltage, TC = 25°C 1.0
@ Rated DC Voltage, TC = 100°C 50

100 100
TC = 150°C

10
TC = 100°C
10 1
TC = 150°C
0.1
TC = 25°C
TC = 100°C TC = 25°C
1 0.01
100 200 300 400 500 600 700 800 0 10 20 30 40 50
vF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (VOLTS)

10000 30
25
C, CAPACITANCE (pF)
20
1000 15
DC
10 SQUARE WAVE
(VR = 45 V)
100 0
1 10 100 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)
Figure 3. Typical Capacitance Per Leg Figure 4. Current Derating Per Leg

MOTOROLA
Advance Information MBR6045PT

(> 10 V/ns)
1
• Case: Epoxy, Molded 2,4
Seconds CASE 340D–02
• Marking: B6045
MAXIMUM RATINGS
Rev 3

MBR6045PT
@ IF = 30 Amps, TC = 25°C 0.62
@ IF = 30 Amps, TC = 125°C 0.55
@ IF = 60 Amps, TC = 25°C 0.75
1000 100

100
TC = 150°C
10
TC = 100°C
10
1
0.1
150°C 100°C TC = 25°C
TC = 25°C
0.01 1
0 10 20 30 40 50 100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage

MOTOROLA
Advance Information MBR5025L

SWITCHMODE Power Rectifier Motorola Preferred Device
RECTIFIER
• Very Low Forward Voltage Drop (Max 0.58 V @ 100°C)
LOW vF
40 AMPERES
(> 10 V/ns)
45 VOLTS
• Specially Designed for SWITCHMODE Power Supplies with 4
Operating Frequency up to 300 kHz
3 1, 4
Seconds 3
• Marking: B5025L CASE 340E–02
MAXIMUM RATINGS
Average Rectified Forward Current IF(AV) 50 Amp
TC = 125°C
Rev 2

MBR5025L
@ IF = 50 Amps, TC = 25°C 0.62
@ IF = 50 Amps, TC = 125°C 0.58
@ IF = 30 Amps, TC = 25°C 0.54
100 1000
TJ = 150°C

100
10 100°C
10
1
TJ = 150°C 100°C 25°C
0.1 25°C
1 0.01
0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40

70 10
60
8
50
40 6
DC DC
30
4
20
2
10
0 0
110 120 130 140 150 160 0 40 80 120 160

MOTOROLA
SWITCHMODE Power Rectifiers MBR3035WT

MBR3045WT
MBR3045WT is a
• Dual Diode Construction — Terminals 1 and 3 may be Connected for Motorola Preferred Device
Parallel Operation at Full Rating
• Low Forward Voltage SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35–45 VOLTS
• Popular TO–247 Package
Readily Solderable
1
3
CASE 340K–01
• Marking: B3035, B3045 2, 4 TO–247AC
3
MAXIMUM RATINGS
MBR
Rating Symbol Unit
3035WT 3045WT
(Rated VR) TC = 105°C Per Diode 15
Peak Repetitive Forward Current, Per Diode (Rated VR, Square Wave, 20 kHz) IFRM 30 Amps
Peak Repetitive Reverse Current, Per Diode (2.0 µs, 1.0 kHz) See Figure 6 IRRM 2.0 Amps
THERMAL CHARACTERISTICS (Per Diode)

ELECTRICAL CHARACTERISTICS (Per Diode)

(iF = 20 Amps, TC = 125°C) 0.6
(iF = 30 Amps, TC = 125°C) 0.72
(iF = 30 Amps, TC = 25°C) 0.76
Rev 1

MBR3035WT MBR3045WT
100
50 100
30 TJ = 150°C

20 TJ = 150°C
25°C 125°C
10 10
5.0 100°C
3.0 1.0 75°C
2.0
1.0
0.1
0.5
0.3 25°C
0.2 0.01
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 45 50

20 20
+ 20, 10, 5
I
I
I I RESISTIVE LOAD
AV AV
15 15
SQUARE SQUARE
WAVE WAVE
10 10
dc
dc
5.0 5.0 TJ = 125°C
+ 20, 10, 5
I
I
AV
0 0
60 70 80 90 100 110 120 130 140 150 160 0 5.0 10 15 20 25 30 35 40
Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg)
+150 V, 10 mAdc
2.0 kΩ
3000
VCC 12 Vdc
2000
C, CAPACITANCE (pF)
D.U.T. +
12 V 100 4.0 µF
2N2222
1000
900 2.0 µs
800 1.0 kHz
700
CURRENT 2N6277
600
AMPLITUDE 100 W
500 CARBON
ADJUST
400 0–10 AMPS
1.0 CARBON
300
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1N5817
Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse

Current

MOTOROLA
Advance Information MBR4015LWT

SWITCHMODE
Schottky Power Rectifier
TO247 Power Package SCHOTTKY BARRIER
RECTIFIER
. . . employing the Schottky Barrier principle in a large area metal–to–silicon 40 AMPERES
power rectifier. Features epitaxial construction with oxide passivation and metal 15 VOLTS
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.

• Guardring for Over–Voltage Protection
• Monolithic Dual Die Construction. May Be Paralleled for High
Current Output. 1
2
• Full Electrical Isolation without Additional Hardware 3 1
2
3
• Case: Molded Epoxy
CASE 340K–01, Style 2
• Weight: 4.3 grams (approximately) TO–247
• Shipped in 30 Units Per Plastic Tube
• Marking: B4015L
MAXIMUM RATINGS
Average Rectified Forward Current Per Leg IO 20 A
(At Rated VR, TC = 95°C) Per Package 40
Peak Repetitive Forward Current Per Leg IFRM 40 A
(At Rated VR, Square Wave, 20 kHz, TC = 95°C)
Non–Repetitive Peak Surge Current Per Package IFSM 120 A
Storage / Operating Case Temperature Tstg, TC – 55 to +100 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/µs
Thermal Resistance — Junction–to–Case Per Leg RθJC 0.57 °C/W
— Junction–to–Ambient Per Leg RθJA 55
Rev 3

MBR4015LWT
Maximum Instantaneous Forward Voltage (1), See Figure 2 Per Leg VF TJ = 25°C TJ = 100°C V
(IF = 20 A) 0.42 0.36
(IF = 40 A) 0.50 0.48
Maximum Instantaneous Reverse Current, See Figure 4 Per Leg IR TJ = 25°C TJ = 100°C mA
(VR = 15 V) 5.0 530
(VR = 7.5 V) 2.7 370
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
100

1000 1000
100 100
TJ = 150°C
TJ = 100°C TJ = 150°C
TJ = 100°C
10 10
TJ = 25°C TJ = 25°C
1.0 1.0
TJ = –40°C
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Leg Figure 2. Maximum Forward Voltage Per Leg
10E+0 10E+0
I R, MAXIMUM REVERSE CURRENT (AMPS)
TJ = 150°C
TJ = 150°C
I R, REVERSE CURRENT (AMPS)
1.0E+0 1.0E+0
TJ = 100°C
100E–3 TJ = 100°C 100E–3
10E–3 10E–3
TJ = 25°C
1.0E–3 1.0E–3
TJ = 25°C
100E–6 100E–6
0 5.0 10 15 0 5.0 10 15
Figure 3. Typical Reverse Current Per Leg Figure 4. Maximum Reverse Current Per Leg

MBR4015LWT
35 14
PFO , AVERAGE POWER DISSIPATION (WATTS)

dc FREQ = 20 kHz Ipk/Io = p SQUARE
I O , AVERAGE FORWARD CURRENT (AMPS)

dc
30 12 WAVE
Ipk/Io = 5
Ipk/Io = 10
25 SQUARE WAVE 10
Ipk/Io = 20
20 8.0
Ipk/Io = p
15 Ipk/Io = 5 6.0
10 Ipk/Io = 10 4.0
Ipk/Io = 20
5.0 2.0
0 0
0 20 40 60 80 100 120 140 160 0 5.0 10 15 20 25 30 35
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg
10,000 125
TJ , DERATED OPERATING TEMPERATURE ( °C)

TJ = 25°C
115
Rtja = 21°C/W
C, CAPACITANCE (pF)
105
1000 95
42°C/W
85
60°C/W
75
75°C/W
100 65
0 2.0 4.0 6.0 8.0 10 12 14 16 0 2.0 4.0 6.0 8.0 10 12 14 16
VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating

Per Leg*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1.0
50%
20%
10%
5.0%
0.1
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.01
0.00001 0.0001 0.001 0.01 0.1 1.0 10
T, TIME (s)
Figure 9. Thermal Response Junction to Lead (Per Leg)

MBR4015LWT
1.0
R (T) , TRANSIENT THERMAL RESISTANCE
50%
20%
0.1
10%
(NORMALIZED)
5.0%
2.0%
0.01
1.0%
0.001
Rtjl(t) = Rtjl*r(t)
0.0001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient (Per Leg)

MOTOROLA
Advance Information MBR4045WT

(> 10 V/ns)
1
• Case: Epoxy, Molded 2,4 1
2
Leads are Readily Solderable CASE 340K–01
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 TO–247AC
Seconds
• Marking: B4045
MAXIMUM RATINGS
Rev 3

MBR4045WT
@ IF = 20 Amps, TC = 25°C 0.70
@ IF = 20 Amps, TC = 125°C 0.60
@ IF = 40 Amps, TC = 25°C 0.80
@ IF = 40 Amps, TC = 125°C 0.75
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle < 2.0%
100 100
TC = 150°C

10
TC = 100°C
10 1
TC = 150°C
0.1
TC = 25°C
TC = 100°C TC = 25°C
1 0.01
100 200 300 400 500 600 700 800 0 10 20 30 40 50
vF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (VOLTS)

10000 30
25
C, CAPACITANCE (pF)
20
1000 15
DC
10 SQUARE WAVE
(VR = 45 V)
100 0
1 10 100 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)
Figure 3. Typical Capacitance Per Leg Figure 4. Current Derating Per Leg

MOTOROLA
Advance Information MBR6045WT

(> 10 V/ns)
2,4
2
Leads are Readily Solderable CASE 340K–01
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 TO–247AC
Seconds
• Marking: B6045
MAXIMUM RATINGS
Rev 3

MBR6045WT
@ IF = 30 Amps, TC = 25°C 0.62
@ IF = 30 Amps, TC = 125°C 0.55
@ IF = 60 Amps, TC = 25°C 0.75

1000 100
100
TC = 150°C
10
TC = 100°C
10
1
0.1
150°C 100°C TC = 25°C
TC = 25°C
0.01 1
0 10 20 30 40 50 100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage

MOTOROLA

Power Rectifiers 1N5827
1N5828
suited for use as rectifiers in low–voltage, high–frequency inverters, free– Motorola Preferred Devices
wheeling diodes, and polarity–protection diodes.
• Low Stored Charge, Majority Carrier Conduction RECTIFIERS
• High Surge Capacity 15 AMPERES
20, 30, 40 VOLTS
• Case: Welded steel, hermetically sealed
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper
anode terminal which transmits heat away from the die requires that cau-
tion be used when attaching wires. Motorola suggests a heat sink be
clamped between the eyelet and the body during any soldering operation.
• Stud Torque: 15 lb–in max
• Shipped 25 units per rail CASE 56–03
DO–203AA
• Marking: 1N5826, 1N5827, 1N5828
METAL
MAXIMUM RATINGS
Average Rectified Forward Current IO Amp
v
15
VR(equiv) 0.2 VR(dc), TC = 85°C
Rated VR(dc), PF(AV) = 0,
RθJA = 5.0°C/W
Non–Repetitive Peak Surge Current IFSM 500 (for one cycle) Amp
halfwave, single phase, 60 Hz)
* Indicates JEDEC Registered Data
Rev 1

1N5826 1N5827 1N5828
(iF = 8.0 Amps) 0.380 0.400 0.420
(iF = 15 Amps) 0.440 0.470 0.500
(iF = 47.1 Amps) 0.670 0.770 0.870
Maximum Instantaneous Reverse iR mA
Current @ Rated dc Voltage (1) 10 10 10
TC = 100°C 75 75 75
TA(max) = TJ(max) *RθJA PF(AV) *
RθJA PR(AV) (1) VR(equiv) = Vin(PK) F (4)
The Factor F is derived by considering the properties of the various
5°C/W.
N
VR(equiv) = (1.41) (10) (0.65) = 9.18 V.
TR = TJ(max) * RθJA PR(AV) (2) Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 10 W
+ 20 and IF(AV) + 5 A
* RθJA PF(AV)
@
TA(max) = TR I (AV)
(3)
TA(max) = 121 (5) (10) = 71°C.

Full Wave,
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) [ 2.0 Vin(PK). *†Use line to center tap voltage for Vin.

1N5826 1N5827 1N5828
125 125
2.5 2.5 3.5
3.5
5.0 5.0
115 7.0 115 7.0
105 105
10
10
15
95 95 15
20 20
30 30
85 85
Rq JA (°C/W) = 50* Rq JA (°C/W) = 50*
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30

16
125
2.5
3.5
TJ [ 125°C
14
115 5.0
7.0 12
SINEWAVE
10 CAPACITIVE SQUARE
105 WAVE
LOADS
10 8.0 I(PK)
15 = 20 10 5.0 π dc
95 I(AV)
6.0
20
30 4.0
SINE WAVE
85
Rq JA (°C/W) = 50* RESISTIVE LOAD
2.0
75 0
4.0 5.0 7.0 10 15 20 30 40 0 2.0 4.0 6.0 8.0 10 12 14 16
VR REVERSE VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 3. Maximum Reference Temperature – 1N5828 Figure 4. Forward Power Dissipation

* NO EXTERNAL HEAT SINK

1N5826 1N5827 1N5828
200 1000

Prior to surge, the rectifier is operated such
700 that TJ = 100°C; VRRM may be applied be-
TJ = 25°C tween each cycle of surge.
100 f = 60 Hz
500
70
100°C
50 300
30 200
20
100
1.0 2.0 5.0 10 20 50 100
10 NUMBER OF CYCLES
7.0 Figure 6. Maximum Surge Capability
5.0
3.0

16
Square
Wave
p Sine Wave
2.0 14 Resistive Load
DC Continuous
12 Max IDC = 23.4 A
1.0 10
0.7 8.0
5.0
6.0
0.5 10
4.0 SineWave I(PK)
= 20
Capacitive Loads I(AV)
0.3
2.0
Curves apply when reverse power is negligible
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 75 85 95 105 115 125
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

1.0
0.7
0.5
0.3
0.2 ZθJC(t) = RθJC @ r(t)
tp
0.1 DUTY CYCLE, D = tp/t1
DTJC = P(pk) @ RθJC [D = (1–D) @ r(t1 + tp) + r(tp) – r(t1)] where
0.03
0.02 r(t) = normalized value of transient thermal resistance at time, t, from Figure 8, i.e.:
0.01
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k
t, TIME (ms)

1N5826 1N5827 1N5828
5.0 200
TJ = 125°C
IR, REVERSE CURRENT (NORMALIZED) VR = VRWM 100
3.0

2.0 50
100°C
20
1.0
0.7 10
75°C
0.5 5
0.3 2
0.2 25°C
1 1N5826 – 20 V
0.1 0.5 1N5827 – 30 V
0.07 1N5828 – 40 V
0.05 0.2
25 45 65 85 105 125 0 4.0 8.0 12 16 20 24 28 32 36 40
Figure 9. Normalized Reverse Current Figure 10. Typical Reverse Current
2500 NOTE 2 — HIGH FREQUENCY OPERATION

2000
TJ = 25°C Since current flow in a Schottky rectifier is the result of majority
1500 carrier conduction, it is not subject to junction diode forward and
C, CAPACITANCE (pF)

1000
700 Rectification efficiency measurements show that operation will
1N5826
500 waveform rectification efficiency is approximately 70 per cent at
1N5827
300 1N5828 0.406 for sine wave inputs. However, in contrast to ordinary
250 junction diodes, the loss in waveform efficiency is not indicative of
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 power loss; it is simply a result of reverse current flow through the
VR, REVERSE VOLTAGE (VOLTS) diode capacitance, which lowers the dc output voltage.

MOTOROLA
 Data Sheet
Designer's
1N5829
SWITCHMODE Power Rectifiers 1N5830
1N5831
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers 1N5831 is a
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity Motorola Preferred Device
protection diodes.
• Low Stored Charge, Majority Carrier Conduction RECTIFIERS
20, 30, 40 VOLTS
Readily Solderable
DO–203AA
• Marking: 1N5829, 1N5830, 1N5831
METAL
MAXIMUM RATINGS
Rating Symbol *1N5829 *1N5830 *1N5831 Unit
Average Rectified Forward Current IO 25 Amps
VR(equiv) v 0.2 VR(dc), TC = 85°C
Rated VR(dc), PF(AV) = 0, RθJA = 3.5°C/W
Non–Repetitive Peak Surge Current IFSM 800 (for one cycle) Amps
Rev 2

1N5829 1N5830 1N5831
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol *1N5829 *1N5830 *1N5831 Unit
(iF = 10 Amps) 0.360 0.370 0.380
(iF = 25 Amps) 0.440 0.460 0.480
(iF = 78.5 Amps) 0.720 0.770 0.820
Maximum Instantaneous Reverse iR mA
Current @ Rated dc Voltage (1) 20 20 20
(TC = 100°C) 150 150 150
TA(max) = TJ(max) *RθJA PF(AV) *
5°C/W.
N
VR(equiv) = (1.41) (10) (0.65) = 9.18 V.
TR = TJ(max) * RθJA PR(AV) (2) Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 12.8 W
+ 20 and IF(AV) + 8 A
* RθJA PF(AV)
@
TA(max) = TR I (AV)
(3)
TA(max) = 113 (5) (12.8) = 49°C.

Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped††
Load
Resistive Capacitive† Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
†Note that VR(PK) [ 2.0 Vin(PK). ††Use line to center tap voltage for Vin.

1N5829 1N5830 1N5831
125 125
115 1.75 115
2.5 1.75
105 3.5 105
5.0 2.5
7.0 3.5
5
95 10 95
7
15 10
20
85 85 15
30
20
Rq JA (°C/W) = 50††† Rq JA (°C/W) = 50††† 30
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30

125 28
SINE WAVE SINE WAVE
CAPACITIVE RESISTIVE LOAD
24
115 LOADS
10 5.0
1.75 I(PK)
20 = 20
I(AV)
105 2.5
16 SQUARE
3.5
WAVE
5.0
12
95 7.0 dc
10
8.0
15
85
Rq JA
20
4.0 TJ [ 125°C
30
(°C/W) = 50†††
75 0
4.0 5.0 7.0 10 15 20 30 40 0 4.0 8.0 12 16 20 24 28

††† NO EXTERNAL HEAT SINK

1N5829 1N5830 1N5831
300 1000

200 700
500
100 TC = 25°C
100°C 300
70
50 200 Prior to surge, the rectifier is operated such

that TJ = 100°C; VRRM may be applied be-
tween each cycle of surge.

30 f = 60 Hz
20 100
1.0 2.0 5.0 10 20 50 100
NUMBER OF CYCLES
Figure 6. Maximum Surge Capability

10
7.0
5.0

28
dc, Continuous
(Max IDC = 39.3 A)
3.0 24
Sine Wave
20 Resistive Load
2.0
Square
16 Wave
1.0
12 5.0
0.7 10
8.0
Sine Wave I(PK)
= 20
0.5 Capacitive Loads I(AV)
4.0
0.3 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 75 85 95 105 115 125

1.0
0.7
0.5
0.3
tp
0.03
0.01
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k
t, TIME (ms)

1N5829 1N5830 1N5831
5.0 500
TJ = 125°C
IR, REVERSE CURRENT (NORMALIZED)
3.0 VR = VRWM 200

2.0
100
100°C
50
1.0
0.7 20
0.5 75°C
10
0.3 5
0.2
25°C
2 1N5829 – 20 V
0.1 1N5830 – 30 V
1 1N5831 – 40 V
0.07
0.05 0.5
25 45 65 85 105 125 0 4.0 8.0 12 16 20 24 28 32 36 40

TJ = 25°C
6000
C, CAPACITANCE (pF)

3000
1N5830 be satisfactory up to several megahertz. For example, relative
800 1N5831 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
600
0.406 for sine wave inputs. However, in contrast to ordinary

MOTOROLA

1N6096
SD41
1N6096 and SD41 are
• 150°C Operating Junction Temperature Capability Motorola Preferred Devices
• Mounting Torque: 15 in–lb max
Mechanical Characteristics: SCHOTTKY BARRIER
• Case: Welded steel, hermetically sealed RECTIFIERS
• Weight: 45.6 grams (approximately) 25 and 30 AMPERES
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is 30 to 45 VOLTS
Readily Solderable
• Shipped 25 units per rail
• Marking: 1N6095, 1N6096, SD41
CASE 56–03
DO–203AA
METAL
MAXIMUM RATINGS
Rating Symbol 1N6095* 1N6096* SD41 Unit
Average Rectified Forward Current IO 25 25 30 Amps
(Rated VR) TC = 70°C TC = 70°C TC = 105°C
Case Temperature TC 105 105 — °C
(Rated VR)
Non–Repetitive Peak Surge Current IFSM 400 400 600 Amps
Peak Repetitive Reverse Surge Current IRRM 2.0 2.0 2.0 Amps
(2.0 µs, 1.0 kHz) See Figure 10. (1)
Operating and Storage Junction Temperature Range TJ, Tstg *65 to +125 *65 to +125 *55 to +150°C °C
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 150 150 °C
Voltage Rate of Change dv/dt 10000 10000 10000 V/µs
(Rated VR)
Characteristic Symbol 1N6095* 1N6096* SD41 Unit
(1) Not JEDEC requirement, but a Motorola product capability.
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.v
Rev 1

1N6095 1N6096 SD41
(iF = 30 Amps, TC = 125°C) — — 0.55
(iF = 78.5 Amps, TC = 70°C) 0.86 0.86 —
Maximum Instantaneous Reverse Current (2) iR 250 250 125 mA
(Rated dc Voltage, TC = 125°C) @ VR = 35 V
Capacitance Ct 6000 6000 2000 pF
(100 kHz w w 1.0 MHz)
f VR = 1.0 V VR = 1.0 V VR = 5.0 V
(1) Not JEDEC requirement, but a Motorola product capability.
(2) Pulse Test: Pulse Width = 300 µs, Duty Cyclev 2.0%.

1N6095 1N6096 SD41
200 1000
TJ = 150°C

100
100
125°C
70 10 100°C
50 75°C
1.0
30
TJ = 150°C
0.1
20 25°C
0.01
25°C
0 10 20 30 40 50
10
7.0 Figure 2. Typical Reverse Current
5.0
IFSM, PEAK HALF–WAVE CURRENT (AMPS)

3.0 600
2.0
400 TJ = 125°C, VRRM may be
applied between each
cycle of surge
1.0 SD41
200
0.7 1N6095/6
0.5
100
0.3 80
0.2 60
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz
Figure 1. Typical Forward Voltage Figure 3. Maximum Surge Capability

C, CAPACITANCE (pF)

be satisfactory up to several megahertz. For example, relative 800
700
600
0.28 at this frequency, whereas perfect rectification would yield 500
junction diodes, the loss in waveform efficiency is not indicative of 300
power loss; it is simply a result of reverse current flow through the .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
diode capacitance, which lowers the dc output voltage. VR, REVERSE VOLTAGE (VOLTS)

1N6095 1N6096 SD41
40 40

RATED REVERSE VOLTAGE
+ p + SQUARE WAVE
RATED REVERSE VOLTAGE I
PK
I
+ p + SQUARE WAVE
AV (RESISTIVE LOAD) I
PK
30 30 I
AV (RESISTIVE LOAD)
+ IPK (CAPACITIVE LOAD)

I
5, 10, 20
20 20
AV
dc
+ 20, 10, 5
I
(CAPACITIVE LOAD) PK dc
10 I 10
AV
0 0
60 80 100 120 140 160 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 5. SD41 Current Derating Figure 6. 1N6095/6 Current Derating
25
I 10 5
(CAPACITIVE LOAD) PK = 20 Sine Wave
I and
20 AV
Square Wave
dc
15
10
TJ = 125°C
5.0
0
0 10 20 30 40
1.0
0.7
0.5 ZqJC(t) = RqC · r(t)

0.3
0.2 Ppk Ppk
(NORMALIZED)
tp
0.1 TIME
t1
0.07
0.05 ∆TJC = Ppk • RθJC [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where:
∆TJC = the increase in junction temperature above the case temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, from
0.02 Figure 8, i.e.: r(t1 + tp) = normalized value of transient thermal resistance
at time, t1 + tp.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

1N6095 1N6096 SD41
COPPER LEAD
HOLE DIA. = 0.073
ALLOY 52 MOLY DISK
GLASS SEAL
BARRIER METAL
038 COPPER
STEEL OXIDE PASSIVATION
MOLY DISK
VIEW A–A
COPPER BASE GUARDRING
VIEW A–A
Figure 9. Schottky Rectifier
Motorola builds quality and reliability into its Schottky Rectifiers. These two features give the unit the capability of passing
First is the chip, which has an interface metal between the stringent thermal fatigue tests for 5,000 cycles. The top copper
platinum–barrier metal and nickel–gold ohmic–contact metal to lead provides a low resistance to current and therefore does not
eliminate any possible interaction with the barrier. The indicated contribute to device heating; a heat sink should be used when
guardring prevents dv/dt problems, so snubbers are not required. attaching wires.
The guardring also operates like a zener to absorb over–voltage Third is the redundant electrical testing. The device is tested
transients. before assembly in “sandwich’’ form, with the chip between the
Second is the package. There are molybdenum disks which moly disks. It is tested again after assembly. As part of the final
closely match the thermal coefficient of expansion of silicon on electrical test, devices are 100% tested for dv/dt at 1,600 V/µs and
each side of the chip. The top copper lead is also stress relieved. reverse avalanche.
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
D.U.T. +
12 V 100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100 W
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817


MOTOROLA

. . . using a platinum barrier metal in a large area metal–to–silicon power diode.
MBR3535
MBR3545
State–of–the–art geometry features epitaxial construction with oxide passiva-
high–frequency inverters, free–wheeling diodes, and polarity–protection
diodes. MBR3545 is a
• Guardring for dv/dt Stress Protection
• Guaranteed Reverse Surge Current/Avalanche
• Mounting Torque: 15 in–lb max SCHOTTKY BARRIER
RECTIFIERS
• Case: Welded steel, hermetically sealed 20 to 45 VOLTS
Readily Solderable
• Marking: B3520, B3535, B3545
CASE 56–03
DO–203AA
METAL
MAXIMUM RATINGS
Rating Symbol MBR3520 MBR3535 MBR3545 Unit
(Rated VR, Square Wave, 20 kHz, TC = 110°C)
(Rated VR, TC = 110°C)
Peak Repetitive Reverse Surge Current IRRM 2.0 Amps
Voltage Rate of Change dv/dt 10000 V/µs
(Rated VR)
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction to Case RθJC 1.3 1.5 °C/W
Rev 2

MBR3520 MBR3535 MBR3545
(iF = 35 Amps, TC = 125°C) 0.49 0.55
(iF = 35 Amps, TC = 25°C) 0.55 0.63
(iF = 70 Amps, TC = 125°C) 0.60 0.69
(Rated Voltage, TC = 125°C) 60 100
(Rated Voltage, TC = 25°C) 0.1 0.3
Capacitance (VR = 1.0 Vdc, 100 kHz u f u1.0 MHz, TC = 25°C) Ct 3000 3700 pF

MBR3520 MBR3535 MBR3545
200 1000
TJ = 150°C

100 125°C
100
100°C
70 10
75°C
50
1.0
30
TJ = 150°C
0.1 25°C
20
0.01
25°C
0 10 20 30 40 50
10
7.0 Figure 2. Maximum Reverse Current
5.0
3.0 600
IFSM , PEAK SURGE CURRENT (AMPS)

2.0
400
RATED LOAD
1.0 f = 60 Hz
200
0.7
0.5
100
0.3 80
0.2 60
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) NUMBER OF CYCLES
Figure 1. Maximum Forward Voltage Figure 3. Maximum Surge Capability
40 40
VR @ RATED VOLTAGE
+ 20, 10, 5
I
I
AV
30 30
TJ = 125°C
20 20 dc
+ 20, 10, 5
I
I dc SQUARE WAVE
AV
10 10
+ p + SQUARE WAVE + p (RESISTIVE LOAD)

I I
PK PK
I (RESISTIVE LOAD) I
AV AV
0 0
60 80 100 120 140 160 0 10 20 30 40

MBR3520 MBR3535 MBR3545
1.0
r(t), TRANSIENT THERMAL RESISTANCE 0.5 ZqJC(t) = RqC · r(t)
0.2 Ppk Ppk

(NORMALIZED)
tp
0.1 TIME
t1
0.05 ∆TJC = Ppk • RθJC [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where:

∆TJC = the increase in junction temperature above the case temperature.
r(t) = normalized value of transient thermal resistance at time, t, from
0.02 Figure 6, i.e.: r(t1 + tp) = normalized value of transient thermal resistance
at time, t1 + tp.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

4000 100 kHz ≥ f ≥ 1.0 MHz
carrier conduction, it is not subject to junction diode forward and
C, CAPACITANCE (pF)
stored charge. Satisfactory circuit analysis work may be performed MAX
Rectification efficiency measurements show that operation will TYP
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 1000
power loss; it is simply a result of reverse current flow through the 0.5 1.0 2.0 5.0 10 20 50
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
D.U.T. +
12 V 100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100 W
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817


MBR3520 MBR3535 MBR3545
COPPER LEAD
HOLE DIA. = 0.073
ALLOY 52 MOLY DISK
GLASS SEAL
BARRIER METAL
038 COPPER
MOLY DISK
VIEW A–A
VIEW A–A
First is the chip, which has an interface metal between the powered thermal fatigue tests for 5,000 cycles. The top copper
guardring prevents dv/dt problems, so snubbers are not attaching wires.
mandatory. The guardring also operates like a zener to absorb Third is the redundant electrical testing. The device is tested
over–voltage transients. before assembly in “sandwich’’ form, with the chip between the
each side of the chip. The top copper lead is also stress–relieved reverse avalanche. Devices are also 100% reverse scope tested
to prevent damage during assembly. for trace anomalies.

MOTOROLA
 Data Sheet
Designer's
1N5832
1N5834
suited for use as rectifiers in low–voltage, high–frequency inverters, free Motorola Preferred Devices
wheeling diodes, and polarity protection diodes.
• Low Power Loss/High Efficiency RECTIFIERS
20, 30, 40 VOLTS
• Weight: 17 grams (approximately)
Readily Solderable
DO–203AB
• Marking: 1N5832, 1N5833, 1N5834
METAL
*MAXIMUM RATINGS
Average Rectified Forward Current IO Amps
v
40
VR(equiv) 0.2 VR(dc), TC = 75°C
Rated VR(dc), PF(AV) = 0, RθJA = 2.0°C/W
Non–Repetitive Peak Surge Current IFSM 800 (for one cycle) Amps
(Forward Current Applied)
Rev 2

1N5832 1N5833 1N5834
(iF = 10 Amps) 0.360 0.370 0.380
(iF = 40 Amps) 0.520 0.550 0.590
(iF = 125 Amps) 0.980 1.080 1.180
Maximum Instantaneous Reverse Current @ rated dc Voltage (1) iR mA
TC = 100°C 20 20 20
150 150 150
TA(max) = TJ(max) *
RθJA PF(AV) *
3°C/W.
NVR(equiv) = (10) (1.41) (0.65) = 9.18 V.
TR = TJ(max) * RθJA PR(AV) (2) Step 3. Find PF(AV) from Figure 4. †Read PF(AV) = 20 W
+ 10 and IF(AV) + 15 A
* RθJA PF(AV)
@
TA(max) = TR I (AV)
(3)
TA(max) = 118 (3) (20) = 58°C.
when forward power is zero. The transition from one boundary condi- †Values given are for the 1N5834. Power is slightly lower for the

Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped (1), (2)
Load
Resistive Capacitive (1) Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
(1) Note that VR(PK) [ 2.0 Vin(PK). (2) Use line to center tap voltage for Vin.

1N5832 1N5833 1N5834
125 125
115 1.0 115
1.0
1.5
1.5
105 2.0 105
2
3.0
95 95 3
5.0
7.0
85 10 85 5
15
Rq JA (°C/W) = 40* 30 20 Rq JA (°C/W) = 40* 30 20 15 10 7
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30

125 50
SINE WAVE SINE WAVE
RESISTIVE LOAD
CAPACITIVE LOADS
115 40
I(PK)
= 20 10 5.0
1.0 I(AV)
105 30
1.5 SQUARE
2.0 WAVE
3.0 20 dc
95
5.0
7.0
10
85
30
20
15 10
TJ [ 125°C
Rq JA (°C/W) = 40*
75 0
4.0 5.0 7.0 10 15 20 30 40 0 8.0 16 24 32 40

* NO EXTERNAL HEAT SINK

1N5832 1N5833 1N5834
300 1000

200 700
500
100 TC = 25°C
100°C 300
70
50 200 Prior to surge, the rectifier is operated such

that TJ = 100°C; VRRM may be applied be-
tween each cycle of surge.

30 f = 60 Hz
20 100
1.0 2.0 5.0 10 20 50 100
NUMBER OF CYCLES

10
7.0
5.0

40
dc, Continuous
(Max IDC = 63 A)
3.0
32 Sine Wave
Resistive Load
2.0
Square
24 Wave
1.0
16 5.0
0.7 10
Sine Wave I(PK)
8.0 = 20
0.5 Capacitive Loads I(AV)

0.3 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 75 85 95 105 115 125

1.0
0.7
0.5
0.3
tp
0.03
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

1N5832 1N5833 1N5834
5.0 500
TJ = 125°C
IR, REVERSE CURRENT (NORMALIZED)
3.0 VR = VRWM 200

2.0
100
100°C
1.0 50
0.7
20
0.5 75°C
10
0.3
5
0.2
25°C
2 1N5832 – 20 V
0.1 1N5833 – 30 V
1 1N5834 – 40 V
0.07
0.05 0.5
25 45 65 85 105 125 0 4.0 8.0 12 16 20 24 28 32 36 40

TJ = 25°C
6000
C, CAPACITANCE (pF)

3000
1N5833 be satisfactory up to several megahertz. For example, relative
1N5834
600
NOTE 3 — SOLDER HEAT
The excellent heat transfer property of the heavy duty copper

anode terminal which transmits heat away from the die requires
that caution be used when attaching wires. Motorola suggests a
heat sink be clamped between the eyelet and the body during any
soldering operation.

MOTOROLA

1N6098
SD51
diodes. 1N6098 and SD51 are
• Guardring for Stress Protection SCHOTTKY BARRIER
60 AMPERES
• 150°C Operating Junction Temperature Capability
20 to 45 VOLTS
Readily Solderable
CASE 257–01
• Stud Torque: 25 lb–in max DO–203AB
• Shipped 25 units per rail METAL
• Marking: 1N6097, 1N6098, SD51
MAXIMUM RATINGS
Rating Symbol 1N6097* 1N6098* SD51 Unit
Peak Repetitive Forward Current IFRM — — 120 Amps
Average Rectified Forward Current (Rated VR) IO 50 50 — Amps
TC = 70°C TC = 70°C
Case Temperature (Rated VR) TC 115 115 — °C
Peak Repetitive Reverse Surge Current (2) IRRM 2.0 Amps
(2.0 µs, 1.0 kHz) See Figure 10.
Operating Junction Temperature Range TJ *65 to +125 *65 to +125 *65 to +150 °C
Storage Temperature Range Tstg *65 to +125 *65 to +125 *65 to +165 °C
Voltage Rate of Change (Rated VR) dv/dt 10000 10000 10000 V/µs
(1) Not a JEDEC requirement, but of Motorola product capability.
Rev 1

1N6097 1N6098 SD51

(iF = 157 Amps, TC = 70°C) 0.86 0.86 —
(iF = 60 Amps) — — 0.70
(iF = 60 Amps, TC = 125°C) — — 0.60
(iF = 120 Amps, TC = 125°C) — — 0.84
Maximum Instantaneous Reverse Current (2) iR 200 mA
(Rated Voltage, TC = 125°C) 250 250 50
(Rated Voltage, TC = 25°C) — — @ VR = 35 V
DC Reverse Current iR 250 250 — mA
(Rated Voltage, TC = 115°C)
Maximum Capacitance Ct 7000 7000 4000 pF
(100 kHz v v
f 1.0 MHz) VR = 1.0 Vdc VR = 1.0 Vdc VR = 5.0 Vdc
(1) Not a JEDEC requirement, but of Motorola product capability.

1N6097 1N6098 SD51
200 1000
TJ = 150°C

100 125°C
100
100°C
70 10
75°C
50
1.0
30
TJ = 150°C
0.1 25°C
20
0.01
25°C
0 10 20 30 40 50
10
5.0
3.0 1000
IFSM, PEAK SURGE CURRENT (AMPS)

2.0 700
500
RATED LOAD
1.0
f = 60 Hz
0.7 300
0.5
200
0.3
0.2 100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 1. Typical Forward Voltage Figure 3. Typical Surge Capability

5000
Since current flow in a Schottky rectifier is the result of majority 100 kHz ≥ f ≥ 1.0 MHz
C, CAPACITANCE (pF)
reverse recovery transients due to minority carrier injection and 3000

2000
TYP
power loss; it is simply a result of reverse current flow through the 0.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50

1N6097 1N6098 SD51

80 80

VR @ RATED VOLTAGE VR @ RATED VOLTAGE
+ p (Resistive Load)
I
PK
I
AV I
60 60 PK
I
dc AV
Square Wave Square Wave
40 50% Duty Cycle 40 50% Duty Cycle
20 20
dc
+ 20, 10, 5 + 20, 10, 5
I I
(CAPACITIVE LOAD) PK (Capacitive Load) PK
I I
AV AV
0 0
80 100 120 140 160 50 70 90 110 130
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating Figure 6. Current Derating
(SD51) (1N6097/1N6098)
NOTE 2
50
(Capacitive Load) Square Wave Ppk Ppk
50% Duty Cycle
+ 20
I PEAK POWER, Ppk, is peak of an
40 PK tp
dc equivalent square power pulse.
I
AV
TIME
10
t1
30
5
I To determine maximum junction temperature of the diode in a
PK
20 I given situation, the following procedure is recommended:
AV The temperature of the case should be measured using a
thermocouple placed on the case. The thermal mass connected to
TJ = 125°C
10 the case is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of pulsed
operation once steady–state conditions are achieved. Using the
0 measured value of T C , the junction temperature may be
0 20 40 60 80
determined by:
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TJ = TC + n TJC
Figure 7. Power Dissipation where n TC is the increase in junction temperature above the case
@ * @
n TJC = Ppk RθJC [D + (1 D) r(t1 + tp) + r(tp) r(t1)] where *
from Figure 8, i.e.:
time t1 + tp.
1.0
0.5
0.2 RqJC(t) = RqJC + r(t)

(NORMALIZED)
(Note 2)
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)

1N6097 1N6098 SD51
COPPER LEAD
HOLE DIA. = 0.073
ALLOY 52 MOLY DISK
GLASS SEAL
BARRIER METAL
038 COPPER
MOLY DISK
VIEW A–A
VIEW A–A
Motorola builds quality and reliability into its Schottky Rectifiers. feature which protects the die during assembly. These two features
First is the chip, which has an interface metal between the give the unit the capability of passing stringent thermal fatigue
platinum–barrier metal and nickel–gold ohmic–contact metal to tests for 5,000 cycles. The top copper lead provides a low
eliminate any possible interaction with the barrier. The indicated resistance to current and therefore does not contribute to device
guardring prevents dv/dt problems, so snubbers are not heating; a heat sink should be used when attaching wires.
each side of the chip. The top copper lead has a stress relief reverse avalanche.
feature
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
D.U.T. +
12 V 100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100 W
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817


MOTOROLA
SWITCHMODE Power Rectifiers MBR6015L

MBR6020L
MBR6025L
diodes. MBR6030L
• Guaranteed Reverse Avalanche MBR6030L is a
• Guardring for dv/dt Stress Protection
• Extremely Low Forward Voltage SCHOTTKY BARRIER
Mechanical Characteristics: RECTIFIERS
• Case: Welded steel, hermetically sealed 60 AMPERES
• Weight: 17 grams (approximately) 15 to 30 VOLTS
Readily Solderable
• Marking: B6015L, B6020L, B6025L, B6030L
CASE 257–01
DO–203AB
METAL
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage MBR6015L VRRM 15 Volts
Working Peak Reverse Voltage MBR6020L VRWM 20
DC Blocking Voltage MBR6025L VR 25
MBR6030L 30
Peak Repetitive Reverse Surge Current IRRM 2 Amps
(2 µs, 1 kHz) See Figure 7
Storage Temperature Range Tstg *65 to +175 °C
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Rev 1

MBR6015L MBR6020L MBR6025L MBR6030L
Characteristic Symbol Value Unit
(iF = 30 Amps, TC = 25°C) 0.42
(iF = 60 Amps, TC = 25°C) 0.48
(iF = 30 Amps, TC = 150°C) 0.30
(iF = 60 Amps, TC = 150°C) 0.38
(Rated Voltage, TC = 25°C) 50
(Rated Voltage, TC = 125°C) 280
Capacitance Ct 6000 pF
(VR = 1 Vdc, 100 kHz v f v 1.0 MHz)
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

200 1000
TJ = 150°C

100 125°C
100 100°C
10
70
1.0 25°C
50 TJ = 150°C
0.1
125°C 100°C
30
0.01
25°C 0 10 20 30
* The curves shown are typical for the highest voltage device in the
10
can be estimated from these same curves if VR is sufficiently below
rated VR.
7.0
20,000
5.0 100 kHz ≤ f ≤ 1.0 MHz

10,000
C, CAPACITANCE (pF)
7000
3.0
5000 MAX
2.0
3000 TYP
2000
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1000
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS)
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
reverse recovery transients due to minority carrier injection and D.U.T. +
stored charge. Satisfactory circuit analysis work may be performed 12 V 100 4.0 µF
by using a model consisting of an ideal diode in parallel with a 2N2222
variable capacitance. (See Figure 4.) 2.0 µs
Rectification efficiency measurements show that operation will 1.0 kHz
be satisfactory up to several megahertz. For example, relative CURRENT 2N6277
waveform rectification efficiency is approximately 70 percent at AMPLITUDE 100 W
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is ADJUST CARBON
0.28 at this frequency, whereas perfect rectification would yield 0–10 AMPS
0.406 for sine wave inputs. However, in contrast to ordinary 1.0 CARBON
power loss; it is simply a result of reverse current flow through the 1N5817
Figure 4. Test Circuit for dv/dt and Reverse

Surge Current

100 50

90 VR = RATED VOLTAGE
80 40 SQUARE WAVE
SQUARE AND
70 SINE WAVE
SINE WAVE
60 30
50 IP/Ive = 5.0
5.0
+ 20
I 10 dc
40 10 20 P
dc I
30 AV
20
20 10
10
0 0
60 80 100 120 140 160 0 10 20 30 40 50 60 70
Figure 5. Forward Current Derating Figure 6. Power Dissipation
NOTE 2
Ppk Ppk respond to heat surges generated in the diode as a result of pulsed
DUTY CYCLE, D = tp/t1 operation once steady–state conditions are achieved. Using the
tp
measured value of T C , the junction temperature may be
determined by:
TIME TJ = TC + n TJC
t1
where n TC is the increase in junction temperature above the case
To determine maximum junction temperature of the diode in a @
n TJC = Ppk RθJC [D + (1 D) r(t1 + tp) + r(tp) r(t1)] where * @ *
given situation, the following procedure is recommended: r(t) = normalized value of transient thermal resistance at time, t,
The temperature of the case should be measured using a from Figure 7, i.e.:
thermocouple placed on the case. The thermal mass connected to *
r (t1 tp) = normalized value of transient thermal resistance at
the case is normally large enough so that it will not significantly time t1 + tp.
respond
1.0
0.5 RqJC(t) = RqJC + r(t)
0.2 (NOTE 2)
(NORMALIZED)
0.1
0.05
0.02
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

COPPER LEAD
COPPER
COLD WELD MOLY DISK
GLASS SEAL
ALLOY 52
BARRIER METAL
STEEL CASE OXIDE PASSIVATION
MOLY DISK
VIEW A–A
VIEW A–A
feature

MOTOROLA

State–of–the–art geometry features epitaxial construction with oxide passiva- MBR6045
MBR6045 is a
high–frequency inverters, free–wheeling diodes, and polarity–protection Motorola Preferred Device
diodes.
• Guardring for dv/dt Stress Protection SCHOTTKY BARRIER
• 150°C Operating Junction Temperature RECTIFIERS
• Low Forward Voltage 60 AMPERES
35 and 45 VOLTS
Readily Solderable
DO–203AB
• Marking: B6035, B6045
METAL
MAXIMUM RATINGS
Peak Repetitive Reverse Surge Current IRRM 2.0 Amps
Voltage Rate of Change dv/dt 10000 V/µs
(Rated VR)
Rev 2

MBR6035 MBR6045
(iF = 60 Amps, TC = 25°C) 0.65 0.70
(iF = 60 Amps, TC = 125°C) 0.57 0.60
(iF = 120 Amps, TC = 125°C) 0.70 0.76
Capacitance Ct 3000 3700 pF
(VR = 1.0 Vdc, 100 kHz v 1.0 MHz)

MBR6035 MBR6045
200 1000
TJ = 150°C

100 125°C
100
100°C
70 10
75°C
50
1.0
30 TJ = 150°C
0.1 25°C
20
25°C 0.01
0 10 20 30 40 50
10
5.0
3.0 1000

2.0 700
500
RATED LOAD
1.0 f = 60 Hz
0.7 300
0.5
200
0.3
0.2 100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NOTE 1 — HIGH FREQUENCY OPERATION 6000

carrier conduction, it is not subject to junction diode forward and 4000 100 kHz ≥ f ≥ 1.0 MHz
C, CAPACITANCE (pF)

Rectification efficiency measurements show that operation will TYP
1000
600
power loss; it is simply a result of reverse current flow through the
0.5 1.0 2.0 5.0 10 20 50

MBR6035 MBR6045
80 50

10 5.0 SQUARE WAVE
+ 20
VR @ RATED VOLTAGE I
PK 50% DUTY
70 I
40 AV dc CYCLE
60 I
PK (CAPACITIVE LOAD)
I
50 AV SQUARE WAVE
30
40
I
30 20 PK
dc I
AV
20
10
+
I
10 (CAPACITIVE LOAD) PK 20, 10, 5
I TJ = 125°C
AV
0 0
80 90 100 110 120 130 140 150 160 0 10 20 30 40 50 60 70 80
NOTE 2
Ppk Ppk
+150 V, 10 mAdc
PEAK POWER, Ppk, is peak of an 2.0 kΩ
TIME VCC 12 Vdc

t1
To determine maximum junction temperature of the diode in a D.U.T. +

12 V 100 4.0 µF
given situation, the following procedure is recommended: 2N2222
thermocouple placed on the case. The thermal mass connected to 2.0 µs
the case is normally large enough so that it will not significantly 1.0 kHz
CURRENT 2N6277
100 W
operation once steady–state conditions are achieved. Using the AMPLITUDE
measured value of T C , the junction temperature may be ADJUST CARBON
determined by: 0–10 AMPS
TJ = TC + n TJC 1.0 CARBON
temperature, it may be determined by: 1N5817
@ * @
from Figure 8, i.e.: Figure 7. Test Circuit for dv/dt and
r (t1 + tp) = normalized value of transient thermal resistance at Reverse Surge Current
time t1 + tp.
1.0
0.5
RqJC(t) = RqJC + r(t)

0.2 (NOTE 2)
(NORMALIZED)
0.1
0.05
0.02
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

MBR6035 MBR6045
COPPER LEAD
COPPER
COLD WELD MOLY DISK
GLASS SEAL
ALLOY 52
BARRIER METAL
MOLY DISK
VIEW A–A
VIEW A–A
First is the chip, which has an interface metal between the stringent thermal fatigue tests for 5,000 cycles. The top copper
guardring prevents dv/dt problems, so snubbers are not attaching wires.
feature which protects the die during assembly.

MOTOROLA

MBR6545
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, MBR6545 is a
diodes.
• Guardring for dv/dt Stress Protection HIGH TEMPERATURE
• 175°C Operating Junction Temperature SCHOTTKY RECTIFIERS
65 AMPERES
35 and 45 VOLTS
Readily Solderable
CASE 257–01
• Shipped 25 units per rail DO–203AB
• Marking: B6535, B6545 METAL
MAXIMUM RATINGS
Average Rectified Forward Current IO 65 65 Amps
Peak Repetitive Reverse Surge Current IRRM 2.0 2.0 Amps
Non–Repetitive Peak Surge Current IFSM 800 800 Amps
Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 *65 to +175 °C
Rev 1

MBR6535 MBR6545
Characteristic Symbol MBR6535 MBR6545 Unit
(iF = 65 Amps, TC = 25°C) 0.78 0.78
(iF = 65 Amps, TC = 150°C) 0.62 0.62
(iF = 130 Amps, TC = 150°C) 0.73 0.73
(VR = 1.0 Vdc, 100 kHz v f v 1.0 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.

MBR6535 MBR6545
200 100
TJ = 150°C
TJ = 150°C 100°C 25°C

10
100
100°C
70 1.0
50
0.1
30
0.01
20 25°C
0.001
0 10 20 30 40 50
10
5.0
3.0 1000

2.0 700
500
RATED LOAD
1.0 f = 60 Hz
0.7 300
0.5
200
0.3
0.2 100
0 0.2 0.4 0.6 0.8 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
vF, INSTANTANEOUS VOLTAGE (VOLTS) NUMBER OF CYCLES
Since current flow in a Schottky rectifier is the result of majority 4000 100 kHz ≤ f ≤ 1.0 MHz
C, CAPACITANCE (pF)

2000
TYP

MBR6535 MBR6545
80 50

RATED VOLTAGE APPLIED I
PK dc
70 I
dc 40
AV
SQUARE WAVE
60
SQUARE WAVE, SINE WAVE
50 (CAPACITIVE LOADS) 5.0
5.0 30
10
40
+ 20
10 I
30 20 PK
I
AV
20
+ 20
I 10
10 I
AV
0 0
110 120 130 140 150 160 170 180 0 10 20 30 40 50 60 70 80
NOTE 2
Ppk Ppk
+150 V, 10 mAdc
TIME VCC 12 Vdc

t1
To determine maximum junction temperature of the diode in a D.U.T. +

12 V 100 4.0 µF
CURRENT 2N6277
100 W
measured value of T C , the junction temperature may be ADJUST CARBON
@ * @
time t1 + tp.
1.0
0.5

0.2 (NOTE 2)
(NORMALIZED)
0.1
0.05
0.02
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

MBR6535 MBR6545
COPPER LEAD
COPPER
COLD WELD MOLY DISK
GLASS SEAL
ALLOY 52
BARRIER METAL
MOLY DISK
VIEW A–A
VIEW A–A
feature

MOTOROLA

MBR7545
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers MBR7545 is a
in low–voltage, high–frequency inverters, free–wheeling diodes, and polarity– Motorola Preferred Device
protection diodes.
75 AMPERES
35 and 45 VOLTS
Readily Solderable
CASE 257–01
• Shipped 25 units per rail DO–203AB
• Marking: B7535, B7545 METAL
MAXIMUM RATINGS
Rev 2

MBR7535 MBR7545
(iF = 60 Amps, TC = 125°C) 0.60
(iF = 220 Amps, TC = 125°C) 0.90
Maximum Instantaneous Reverse Current (1) iR 150 250 mA
(Rated dc Voltage, TC = 125°C)
Capacitance Ct 4000 pF
(VR = 5.0 Vdc, 100 kHz v f v 1.0 MHz)

MBR7535 MBR7545
500
300
TJ = 150°C 25°C
200

100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
I FRM , PEAK REPETITIVE FORWARD CURRENT (AMPS)
160 1000
100 TJ = 150°C
120
VR = 0 125°C
VR = RATED 10
100°C
80
75°C
1
40
f = 20 kHz 0.1 25°C
SQUARE WAVE OPERATION
0 0.01
60 80 100 120 140 160 0 10 20 30 40 50
Figure 2. Current Derating Figure 3. Typical Reverse Operation

MOTOROLA

MBR8045
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, MBR8045 is a
diodes.
• Guardring for dv/dt Stress Protection SCHOTTKY RECTIFIERS
35 and 45 VOLTS
Readily Solderable
• Stud Torque: 25 lb–in max CASE 257–01
DO–203AB
METAL
• Marking: B8035, B8045
MAXIMUM RATINGS
Average Rectified Forward Current IO 80 80 Amps
Peak Repetitive Reverse Surge Current IRRM 2.0 2.0 Amps
Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 *65 to +175 °C
Rev 1

MBR8035 MBR8045
(iF = 80 Amps, TC = 25°C) 0.72 0.72
(iF = 80 Amps, TC = 150°C) 0.59 0.59
(iF = 160 Amps, TC = 150°C) 0.67 0.67
(VR = 1.0 Vdc, 100 kHz v f v 1.0 MHz)

MBR8035 MBR8045
200 100
TJ = 150°C

10
100
100°C
70 1.0
50
0.1
30
0.01 25°C
20
0.001
0 10 20 30 40 50
10
5.0
TJ = 150°C
3.0 1000
100°C

2.0 700
25°C 500
1.0 RATED LOAD
f = 60 Hz
0.7 300
0.5
200
0.3
0.2 100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
vF, INSTANTANEOUS VOLTAGE (VOLTS) NUMBER OF CYCLES
Since current flow in a Schottky rectifier is the result of majority 5000 100 kHz ≤ f ≤ 1.0 MHz
reverse recovery transients due to minority carrier injection and MAX
C, CAPACITANCE (pF)

TYP
0.28 at this frequency, whereas perfect rectification would yield 1000

MBR8035 MBR8045
100 80

I
90 VR @ RATED VOLTAGE PK
70 I
80 dc AV
I
PK 60
70 I
AV 50
60 (CAPACITIVE LOADS) 5.0
50 SQUARE WAVE 40
10 dc
+ 20
I
40 30
PK
I
30 AV
20 SQUARE WAVE
20
+ 20, 10, 5
I
10 (CAPACITIVE LOAD) PK 10
I
AV
0 0
100 110 120 130 140 150 160 170 180 0 10 20 30 40 50 60 70 80
NOTE 2
Ppk Ppk +150 V, 10 mAdc
TIME VCC 12 Vdc

t1
D.U.T. +
To determine maximum junction temperature of the diode in a
12 V 100 4.0 µF
CURRENT 2N6277
100 W
ADJUST CARBON
measured value of T C , the junction temperature may be
@
n TJC = Ppk RθJC [D + (1 D) r(t1 + tp) + r(tp) r(t1)] where* @ *
time t1 + tp.
1.0
0.5

0.2 (NOTE 2)
(NORMALIZED)
0.1
0.05
0.02
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

MBR8035 MBR8045
COPPER LEAD
COPPER
COLD WELD MOLY DISK
GLASS SEAL
ALLOY 52
BARRIER METAL
MOLY DISK
VIEW A–A
VIEW A–A
feature

MOTOROLA

SD241
• Dual Diode Construction MBR3045CT and SD241 are
SCHOTTKY BARRIER
• Guaranteed Reverse Avalanche RECTIFIERS
• Case: Copper slug header, welded steel can, hermetically sealed 20 to 45 VOLTS
Readily Solderable
• Shipped 100 units per foam tray
• Marking: MBR3045CT, SD241 1 2
CASE
1
2 CASE 11–03
TO–204AA
METAL
MAXIMUM RATINGS
Rating Symbol MBR3045CT SD241 Unit
Average Rectified Forward Current Per Device IO 30 30 Amps
(Rated VR) TC = 105°C Per Diode 15 15
Peak Repetitive Forward Current, Per Diode IFRM 30 30 Amps
(Rated VR, Square Wave, 20 kHz)
Peak Repetitive Reverse Surge Current, Per Diode IRRM 2.0 2.0 Amps
Peak Surge Junction Temperature TJ(pk) 175 175 °C

Rev 2

MBR3045CT SD241
Characteristic Symbol MBR3045CT SD241 Unit
(iF = 10 Amps, TC = 125°C) — 0.47
(iF = 20 Amps, TC = 125°C) 0.60 0.60
(iF = 30 Amps, TC = 125°C) 0.72 —
(iF = 30 Amps, TC = 25°C) 0.76 —
(Rated dc Voltage, TC = 25°C) 1.0 VR = 35 V

MBR3045CT SD241
100
70 100
TJ = 150°C

50 TJ = 150°C 125°C
10
100°C
30 25°C
1.0 75°C
20
0.1
10 25°C
0.01
7.0
0 10 20 30 40 50
3.0
2.0
500

TJ = 125°C, VRRM MAY BE
1.0 APPLIED BETWEEN EACH
300 CYCLE OF SURGE
0.7
0.5 200
0.3
100
0.2
70
0.1 50
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz
40 40
+ p (RESISTIVE LOAD) + 20, 10, 5

I I
PF(AV) , AVERAGE FORWARD POWER
I I RESISTIVE LOAD
AV AV
30 30
DISSIPATION (WATTS)
SQUARE WAVE SQUARE WAVE
20 20
dc
dc
10 10
+ 20, 10, 5
I
(CAPACITIVE LOAD) PK TJ = 125°C
I
AV
0 0
60 80 100 120 140 160 0 10 20 30 40

MBR3045CT SD241
1.0
r(t), TRANSIENT THERMAL RESISTANCE 0.5
0.2 Ppk Ppk

(NORMALIZED)
tp
TIME
0.1 equivalent square power pulse.
t1
∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where:
0.05 ∆TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
0.02
t1 + tp.
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
Figure 6. Thermal Response per Diode Leg
Since current flow in a Schottky rectifier is the result of majority 2000

C, CAPACITANCE (pF)
be satisfactory up to several megahertz. For example, relative 700
+150 V, 10 mAdc
2.0 kΩ
VCC 12 Vdc
D.U.T. +
12 V 100 4.0 µF
2N2222
2.0 µs
1.0 kHz
CURRENT 2N6277
AMPLITUDE 100 W
ADJUST CARBON
0–10 AMPS
1.0 CARBON
1N5817
Figure 8. Test Circuit for Repetitive

Reverse Current

MOTOROLA
Product Preview
POWERTAP II MBRP20030CTL
The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with
a platinum barrier metal. This state–of–the–art device has the following
LOW VF
features:
SCHOTTKY BARRIER
• Dual Diode Construction — May Be Paralleled for Higher Current Output RECTIFIER
• Recyclable Epoxy
• Guaranteed Reverse Avalanche Energy Capability 2
• Improved Mechanical Ratings
1 1
• Case: Epoxy, Molded with metal heatsink base
• Weight: 80 grams (approximately) 2
3
• Finish: All External Surfaces Corrosion Resistant
• Top Terminal Torque: 25 – 40 lb–in max CASE 357C–03
• Base Plate Torques: See procedure given in the Package Outline Section POWERTAP II
• Shipped 25 units per foam
• Marking: B20030L
MAXIMUM RATINGS
(At Rated VR) TC = + 125°C Per Device 200
(iF = 200 Amps, TC = + 25°C) 0.52
(iF = 200 Amps, TC = + 25°C) 0.60
Maximum Instantaneous Reverse Current (2) IR 5 mA
(Rated dc Voltage, TC = + 25°C)
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Rev 2

MOTOROLA
Preliminary Data Sheet MBRP20045CT

POWERTAP II MBRP20060CT
SWITCHMODE Power Rectifiers Motorola Preferred Devices
• Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOTTKY BARRIER
• Guardring for Stress Protection RECTIFIERS
45 to 60 VOLTS
• Case: Epoxy, Molded with metal heatsink base 2
• Finish: All External Surfaces Corrosion Resistant 1
• Top Terminal Torque: 25–40 lb–in max
• Base Plate Torques: See procedure given in the 1 3 D
Package Outline Section 3
• Shipped 25 units per foam 2
CASE 357C–03
• Marking: B20045T, B20060T POWERTAP II
MAXIMUM RATINGS
Rating Symbol MBRP20045CT MBRP20060CT Unit
Average Rectified Forward Current Per Device IF(AV) 200 200 Amps
(Rated VR) TC = 140°C Per Leg 100 100
Peak Repetitive Forward Current, Per Leg IFRM 200 200 Amps
Peak Repetitive Reverse Current, Per Leg (2.0 µs, 1.0 kHz) See Figure 6. IRRM 2.0 2.0 Amps
THERMAL CHARACTERISTICS PER LEG

ELECTRICAL CHARACTERISTICS PER LEG

(iF = 200 Amps, TJ = 25°C) 0.89 0.91
(iF = 200 Amps, TJ = 25°C) 0.78 0.80
Rev 2

MOTOROLA
Preliminary Data Sheet MBRP30045CT

POWERTAP II MBRP30060CT
• Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOTTKY BARRIER
• Guardring for Stress Protection RECTIFIERS
45 to 60 VOLTS
• Base Plate Torques: See procedure given in the 1 3
CASE 357C–03
• Marking: B30045T, B30060T POWERTAP II
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM Volts
Working Peak Reverse Voltage MBRP30045CT VRWM 45
DC Blocking Voltage MBRP30060CT VR 60
(Rated VR) TC = 140°C Per Leg 150
Non–Repetitive Peak Surge Current Per Leg IFSM 2500 Amps
Peak Repetitive Reverse Current, Per Leg (2.0 µs, 1.0 kHz) See Figure 6. IRRM 2.0 Amps


(iF = 150 Amps, TJ = 25°C) MBRP30045CT 0.70
Rev 2

MOTOROLA
Product Preview
POWERTAP II MBRP60035CTL
The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with
a platinum barrier metal. This state-of-the-art device has the following features:
LOW VF
• Dual Diode Construction — May Be Paralleled for Higher SCHOTTKY BARRIER
Current Output
RECTIFIER
• Recyclable Epoxy
• Guaranteed Reverse Avalanche Energy Capability
1 2
• Improved Mechanical Ratings 3
• Case: Epoxy, Molded with metal heatsink base
• Finish: All External Surfaces Corrosion Resistant 1 4 3
• Top Terminal Torque: 25 – 40 lb–in max
CASE 357C–03
• Base Plate Torques: See procedure given in the 3
POWERTAP II
Package Outline Section
• Shipped 25 units per foam
• Marking: B60035L
MAXIMUM RATINGS
(At Rated VR) TC = + 100°C Per Device 600
(iF = 300 Amps, TC = + 25°C) 0.57
(iF = 300 Amps, TC = + 100°C) 0.50
(Rated dc Voltage, TC = + 25°C) 10
(Rated dc Voltage, TC = + 100°C) 250
Rev 2

MOTOROLA
Advance Information MBR240100V

SWITCHMODE Schottky
Power Rectifier
state–of–the–art device has the following features: SCHOTTKY BARRIER
RECTIFIER
• 100 V Blocking Voltage, Low Forward Voltage Drop 80 AMPERES
• Double Rectifier Diodes Construction: May Be Paralleled for 100 VOLTS
Higher Current Output up to 80 Amp
• Guardring Construction Guarantees Stress Protection, High
dV/dt Capability (10 kV/µs) and Reverse Avalanche
• Very Low Internal Parasitic Inductance (≤ 5.0 nH) 4
• Isolated Power Package (2500 Vac Insulation Rating)
1 3
• 175°C Operating Junction Temperature 4 3
2
• — UL Recognized, File #E69369
• Case: Molded epoxy with isolated metal base
• Weight: 28 g (approximately) SOT–227B, STYLE 2
• Marking: MBR240100V
MAXIMUM RATINGS
Average Rectified Forward Current — Per Diode IF(AV) 40 Amps
(Rated VC) @ TC = 125°C — Per Device 80
Peak Repetitive Forward Current, Per Diode IFRM 120 Amps
Peak Repetitive Reverse Current (2.0 µs, 1.0 kHz) IRRM 2.0 Amps
Operating Junction Temperature TJ – 65 to 150 °C
Storage Temperature Tstg – 65 to 150 °C
Peak Surge Junction Temperature TJ(pk) 175 °C
Voltage Rate of Change dV/dt 10000 V/µs
Package Insulation Rating (AC) Visol 2500 Volts
Rev 1

MBR240100V
Thermal Resistance, Junction to Case Per Diode RθJC 1.2 °C/W
Per Device 0.7

@ iF = 40 Amps, TC = 25°C 0.95
@ iF = 40 Amps, TC = 100°C 0.80
@ iF = 80 Amps, TC = 100°C 0.90
100 10000
i F, INSTANTANEOUS FORWARD CURRENT (A)
TJ = 150°C
1000
I R, REVERSE CURRENT ( µ A) TJ = 125°C
100
TJ = 100°C
10 10
125°C
1
150°C TJ = 25°C
100°C TJ = 25°C 0.1
1 0.01
300 400 500 600 700 800 900 0 20 40 60 80 100 120
vF , INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V)

MOTOROLA
Advance Information
SWITCHMODE Schottky MBR25060V
Power Rectifier
. . . using the Schottky Barrier principle with a Platinum barrier metal. This
• 60 V Blocking Voltage, Low Forward Voltage Drop RECTIFIER
• Double Rectifier Diodes Construction: May Be Paralleled for 100 AMPERES
Higher Current Output up to 100 Amp 60 VOLTS
• Very Low Internal Parasitic Inductance (≤ 5.0 nH)
• Isolated Power Package (2500 Vac Insulation Rating) 4
• 150°C Operating Junction Temperature 1 3

• — UL Recognized, File #E69369 4 3
2
1 2
• Weight: 28 grams (approximately) SOT–227B, STYLE 2
MAXIMUM RATINGS
Per Device 0.7

Instantaneous Forward Voltage (1) @ iF = 50 Amps, TC = 25°C vF 0.65 Volts
@ iF = 50 Amps, TC = 100°C 0.60
Instantaneous Reverse Current (1) @ Rated DC Voltage, TC = 25°C iR 0.5 mA
Rev 1

MOTOROLA
Advance Information MBR28045V

SWITCHMODE Schottky
Power Rectifier
RECTIFIER
• 45 V Blocking Voltage, Low Forward Voltage Drop 160 AMPERES
• Double Rectifier Diodes Construction: May Be Paralleled for 45 VOLTS
Higher Current Output up to 160 Amp
• Very Low Internal Parasitic Inductance (≤ 5.0 nH) 4
• Isolated Power Package (2500 Vac Insulation Rating) 1 3
• 175°C Operating Junction Temperature 4 3 2
• Weight: 28 g (approximately) SOT–227B, STYLE 2
MAXIMUM RATINGS
Peak Surge Junction Temperature TJ(pk) 175 °C
Per Device 0.6
Rev 1

MBR28045V
@ iF = 80 Amps, TC = 25°C 0.8
@ iF = 80 Amps, TC = 150°C 0.69
@ iF = 160 Amps, TC = 25°C 1.0
1000 1000
TJ = 150°C

100
100 TJ = 125°C
10
TJ = 100°C
1
10 125°C
150°C
0.1 TJ = 25°C
100°C TJ = 25°C
1 0.01
100 200 300 400 500 600 700 0 10 20 30 40 50
vF , INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V)

MOTOROLA

Using the Schottky Barrier principle with a proprietary barrier metal. These
state–of–the–art devices have the following features: Motorola Preferred Device

• Maximum Die Size
• Short Heat Sink Tab Manufactured – Not Sheared RECTIFIER
30 VOLTS
4
1
• Shipped 50 Units per Plastic Tube 1
4 3
• Available in 24 mm Tape and Reel, 800 Units per 13” Reel by
Adding a “T4” Suffix to the Part Number 3
CASE 418B–02
• Marking: B3030 D2PAK
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM V
Average Rectified Forward Current Per Device IF(AV) 30 A
(At Rated VR) TC = +134°C) Per Leg 15
Peak Repetitive Forward Current, Per Leg IFRM 30 A
(At Rated VR, Square Wave, 20 kHz) TC = +137°C
Nonrepetitive Peak Surge Current IFSM 200 A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 2.0 A
Reverse Energy (Unclamped Inductive Surge) W 100 mJ
(Inductance = 3 mH), TC = 25°C
Thermal Resistance – Junction to Case RθJC 1.0 °C/W
Thermal Resistance – Junction to Ambient (1) RθJA 50 °C/W
Maximum Instantaneous Forward Voltage (2), per Leg VF V
(IF = 15 A, TC = + 25°C) 0.54
(IF = 15 A, TC = +150°C) 0.47
(IF = 30 A, TC = + 25°C) 0.67
(IF = 30 A, TC = +150°C) 0.66
Maximum Instantaneous Reverse Current (2), per Leg IR mA
(Rated DC Voltage, TC = + 25°C) 0.6
(Reverse Voltage = 10 V, TC = +150°C) 46
(Rate DC Voltage, TC = +150°C) 145
Rev 1

MBRB3030CT
100 100

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎ
10 TJ = 150°C 10 TJ = 150°C
ÎÎ ÎÎ
25°C 25°C
1 1
ÎÎÎ ÎÎÎ
0.1
0 0.1
ÎÎÎ 0.2
100°C
0.3 0.4 0.5 0.6 0.7 0.8

0.1
0
ÎÎÎ
0.1
100°C
0.2 0.3 0.4 0.5 0.6 0.7 0.8

VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage, Per Leg Figure 2. Typical Forward Voltage, Per Leg
ÎÎÎ ÎÎÎÎ
1.0 1.0
ÎÎÎÎ
TJ = 150°C
0.1 0.1 TJ = 150°C
i R , REVERSE CURRENT (A)
i R , REVERSE CURRENT (A)
ÎÎÎ ÎÎÎ
0.01 0.01
ÎÎÎ
100°C
100°C
0.001 0.001
ÎÎ ÎÎ
ÎÎ
10–4 25°C 10–4
25°C
10–5 10–5
10–6 10–6
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Maximum Reverse Current, Per Leg Figure 4. Typical Reverse Current, Per Leg
TJ = 25°C
5000
C, CAPACITANCE (pF)
3000
MAXIMUM
TYPICAL
1000
800
600
1 10
VR, REVERSE VOLTAGE (V)

MBRB3030CT
30
RθJA = 25°C/W
I F(AV), AVERAGE FORWARD CURRENT (A)

RθJC = 1°C/W
DC SQUARE WAVE 15
IPK DC
= 5.0 (CAPACITIVE
20 IAV
π (RESISTIVE LOAD) LOAD) SQUARE WAVE
10 π (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE
IAV
LOAD)
10 10
5 10
20
20
0 0
120 125 130 135 140 145 150 155 0 50 100 150
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)

10
RθJA = 50°C/W
TJ = 150°C
8 DC π (RESISTIVE LOAD)
IPK = 5.0 (CAPACITIVE
SQUARE WAVE IAV
LOAD) DC
6
IPK = 5.0 (CAPACITIVE 10
IAV 10
LOAD)
4
20 SQUARE WAVE
10
5
2
20
0 0
0 50 100 150 0 5 10 15 20 25
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)
1.0
R(t), EFFECTIVE TRANSIENT THERMAL
SINGLE PULSE
RESISTANCE (NORMALIZED)

t1
where
∆TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1 1.0 10 100 1000
t, TIME (ms)

MOTOROLA
SWITCHMODE Power Rectifier MBRB4030

Using the Schottky Barrier principle with a proprietary barrier metal. These
state–of–the–art devices have the following features: Motorola Preferred Device

• Maximum Die Size
• Short Heat Sink Tab Manufactured – Not Sheared RECTIFIER
Mechanical Characteristics 40 AMPERES
30 VOLTS
• Weight: 1.7 Grams (approximately)
Leads Readily Solderable
4
• Shipped 50 Units per Plastic Tube
• Available in 24 mm Tape and Reel, 800 Units per 13″ Reel by 1
Adding a “T4” Suffix to the Part Number 1
4 3
• Marking: B4030 3
CASE 418B–02
D2PAK
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage VRRM V
Average Rectified Forward Current IF(AV) 40 A
(At Rated VR) TC = +115°C (1)
Peak Repetitive Forward Current IFRM 80 A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 2.0 A
Reverse Energy (Unclamped Inductive Surge) (Inductance = 3 mH), Tc = 25°C W 600 mJ
Thermal Resistance – Junction to Case RθJC 1.0 °C/W
Thermal Resistance – Junction to Ambient (2) RθJA 50 °C/W
Maximum Instantaneous Forward Voltage (1 and 3), per Device VF V
(IF = 20 A, TC = + 25°C) 0.46
(IF = 20 A, TC = +150°C) 0.34
(IF = 40 A, TC = + 25°C) 0.55
(IF = 40 A, TC = +150°C) 0.45
Maximum Instantaneous Reverse Current (3), per Device IR mA
(Rated DC Voltage, TC = + 25°C) 0.35
(Rated DC Voltage, TC = +125°C) 150
(1) Rating applies when pins 1 and 3 are connected.
(2) Rating applies when surface mounted on the miniumum pad size recommended.

MBRB4030
I F, INSTANTANEOUS FORWARD CURRENT (mA)
I F, INSTANTANEOUS FORWARD CURRENT (mA)

100 100
(PIN 1 SHORTED TO PIN 3) TJ = 150°C TJ = 150°C
(PIN 1 SHORTED TO PIN 3)

10 10
100°C 25°C 100°C 25°C

1.0 1.0
0.1 0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)
1.0 1.0
TJ = 150°C TJ = 150°C
0.1 0.1
I R , REVERSE CURRENT (A)
I R , REVERSE CURRENT (A)
100°C
0.01 100°C 0.01
10–3 10–3
10–4 10–4 25°C

25°C
10–5 10–5
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current
104
TJ = 25°C
C, CAPACITANCE (pF)
TYPICAL MAXIMUM
1000
1 10
Figure 5. Maximum and Typical Capacitance

MBRB4030
70 20
RθJA = 25°C/W

DC DC
60 π (RESISTIVE LOAD) SURFACE MOUNTED ON
SQUARE WAVE

15 MINIMUM RECOMMENDED
50 IPK π PAD SIZE
SQUARE WAVE = 5.0 (CAPACITIVE
IAV (RESISTIVE LOAD)
LOAD)
40 IPK
= 5.0 (CAPACITIVE
10 IAV
30 LOAD)
10
10
20 5
10 20 20
0 0
100 110 120 130 140 150 50 100 150
12 PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) 50

RθJA = 50°C/W
TJ = 150°C
DC
π (RESISTIVE LOAD)
40 SQUARE WAVE
IPK
= 5.0 (CAPACITIVE
8 SQUARE WAVE IAV
LOAD)
30
IPK 10
6 = 5.0 (CAPACITIVE 20
IAV
LOAD)
10 20
4 DC
10
2 20
0 0
0 50 100 150 0 10 20 30 40 50 60 70 80
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)
1.0
R(t), EFFECTIVE TRANSIENT THERMAL
SINGLE PULSE
RESISTANCE (NORMALIZED)

0.1
tp PEAK POWER, Ppk, is peak of an
t1
where
∆TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1 1.0 10 100 1000
t, TIME (ms)

Section 4
Ultrafast Data Sheets

MOTOROLA
Surface Mount MURS120T3

Ultrafast Power Rectifiers MURS160T3
Ideally suited for high voltage, high frequency rectification, or as free
wheeling and protection diodes in surface mount applications where compact
size and weight are critical to the system.
• Small Compact Surface Mountable Package with J–Bend Leads
• Rectangular Package for Automated Handling ULTRAFAST RECTIFIERS
• High Temperature Glass Passivated Junction 1.0 AMPERE
• Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150°C) 200–600 VOLTS
Readily Solderable
Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead CASE 403A–03
• Marking: U1D, U1J
MAXIMUM RATINGS
MURS
Rating Symbol 120T3 160T3 Unit
Average Rectified Forward Current IF(AV) 1.0 @ TL = 155°C 1.0 @ TL = 150°C Amps
2.0 @ TL = 145°C 2.0 @ TL = 125°C
Thermal Resistance, Junction to Lead RθJL 13 °C/W
(TL = 25°C)
(iF = 1.0 A, TJ = 25°C) 0.875 1.25
(iF = 1.0 A, TJ = 150°C) 0.71 1.05
Maximum Instantaneous Reverse Current (1) iR µA
Maximum Reverse Recovery Time trr ns
(iF = 1.0 A, di/dt = 50 A/µs) 35 75
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 25 50
Maximum Forward Recovery Time tfr 25 50 ns
(iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V)
Rev 2

MURS120T3 MURS160T3
10 80
40 TJ = 175°C
7.0 20
IR, REVERSE CURRENT (m A)

8.0
5.0 4.0
2.0
0.8 TJ = 100°C
3.0 0.4
175°C 100°C 0.2
2.0 0.08
0.04
0.02 TJ = 25°C
TC = 25°C
0.008
1.0
0.004
0.002
0.7
0 20 40 60 80 100 120 140 160 180 200
0.3 * The curves shown are typical for the highest voltage device in the
0.2 can be estimated from these same curves if applied VR is sufficiently
below rated VR.
50
F
0.1
45
0.07 40 NOTE: TYPICAL
CAPACITANCE AT
C, CAPACITANCE (pF)
35 0 V = 45 pF
0.05
30
0.03 25
20
0.02
15
10
0.01 5.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100

5.0
10
9.0 RATED VOLTAGE APPLIED TJ = 175°C

RqJC = 13°C/W
8.0 TJ = 175°C 4.0
5.0
7.0
+ 20
I 10
6.0 3.0 (CAPACITANCE LOAD) PK
I
AV
5.0
4.0 2.0 dc
3.0 dc
SQUARE WAVE
2.0 1.0
1.0 SQUARE WAVE
0 0
80 90 100 110 120 130 140 150 160 170 180 0 0.5 1.0 1.5 2.0 2.5
Figure 4. Current Derating, Case Figure 5. Power Dissipation

MURS120T3 MURS160T3
10 400
200
7.0 80 TJ = 175°C

175°C 40
20
5.0
100°C 8.0
4.0 TJ = 100°C
3.0 2.0
TC = 25°C 0.8
2.0 0.4
0.2
0.08 TJ = 25°C
0.04
1.0 0.02
0.008
0.7 0.004
0 100 200 300 400 500 600 700
0.2 can be estimated from these same curves if applied VR is sufficiently
below rated VR.
25
F
0.1
0.07 20 NOTE: TYPICAL

CAPACITANCE AT
C, CAPACITANCE (pF)
0.05 0 V = 24 pF
15
0.03
10
0.02
5.0
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40

5.0
10
(CAPACITANCE LOAD) 10 5.0

9.0 RATED VOLTAGE APPLIED
+
RqJC = 13°C/W I
PK 20 SQUARE WAVE
8.0 TJ = 175°C 4.0 I
AV
7.0
6.0 3.0
dc
5.0 TJ = 175°C
4.0 2.0
dc
3.0
2.0 1.0
1.0 SQUARE WAVE
0 0
0 20 40 60 80 100 120 140 160 180 200 0 0.5 1.0 1.5 2.0 2.5
Figure 9. Current Derating, Case Figure 10. Power Dissipation

MOTOROLA
Surface Mount MURS320T3

Ultrafast Power Rectifiers MURS360T3
. . . employing state–of–the–art epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for high voltage, high frequency
rectification, or as free wheeling and protection diodes, in surface mount
applications where compact size and weight are critical to the system.
• Small Compact Surface Mountable Package with J–Bend Leads ULTRAFAST RECTIFIERS
• Rectangular Package for Automated Handling 3.0 AMPERES
• Highly Stable Oxide Passivated Junction 200–600 VOLTS
• Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C)
Readily Solderable
Max. for 10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel CASE 403–03
• Marking: U3D, U3J
MAXIMUM RATINGS
MURS
Rating Symbol 320T3 360T3 Unit
Average Rectified Forward Current IF(AV) 3.0 @ TL = 140°C 3.0 @ TL = 130°C Amps
4.0 @ TL = 130°C 4.0 @ TL = 115°C
Thermal Resistance, Junction to Lead RθJL 11 °C/W
(iF = 3.0 A, TJ = 25°C) 0.875 1.25
(iF = 4.0 A, TJ = 25°C) 0.89 1.28
(iF = 3.0 A, TJ = 150°C) 0.71 1.05
(Rated dc Voltage, TJ = 25°C) 5.0 10
(iF = 1.0 A, di/dt = 50 A/µs) 35 75
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A) 25 50
(iF = 1.0 A, di/dt = 100 A/µs, Recovery to 1.0 V)
Rev 2

MURS320T3 MURS360T3
80
40 TJ = 175°C
5.0 20

8.0
4.0
2.0 TJ = 100°C
0.8
3.0 0.4
TJ = 175°C 0.2
100°C 0.08
2.0 0.04 TJ = 25°C

0.02
0.008
0.004
0.002
25°C
0 20 40 60 80 100 120 140 160 180 200
1.0
0.5 rated VR.

10
9.0
8.0
+ 20
I
0.3 (CAPACITIVE LOAD) PK 5.0
7.0 I
AV 10
6.0
0.2 5.0
4.0 dc
3.0
2.0 SQUARE WAVE
0.1 1.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 1. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (AMPS)

10 200
9.0 RATED VOLTAGE APPLIED TYPICAL CAPACITANCE AT 0 V = 135 pF

RqJC = 11°C/W
8.0 TJ = 175°C 100
7.0 80
C, CAPACITANCE (pF)
6.0 60
5.0
40
4.0
30
3.0 dc
20
2.0
1.0 SQUARE WAVE
0 10
90 100 110 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 80 90 100
Figure 4. Current Derating, Case Figure 5. Typical Capacitance

MURS320T3 MURS360T3
400
200
5.0 TJ = 175°C
80

40
20
3.0 8.0
TJ = 175°C 100°C 4.0 TJ = 100°C
2.0
2.0
0.8
0.4
0.2
25°C 0.08 TJ = 25°C

1.0 0.04
0.02
0.008
0.7 0.004
0 100 200 300 400 500 600 700
0.2 rated VR.

10
9.0
0.1
8.0
7.0
0.07 SQUARE WAVE
6.0
dc
5.0 (CAPACITIVE LOADS)
0.05
+ 20
4.0 I
PK 10 5.0
I
3.0 AV
0.03
2.0
0.02 1.0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

10 100
9.0 90
8.0 80 TYPICAL CAPACITANCE AT 0 V = 75 pF
C, CAPACITANCE (pF)
7.0 70
6.0 60
5.0 50
4.0 40
dc
3.0 30
2.0 SQUARE WAVE 20
1.0 10
0 0
70 80 90 100 110 120 130 140 150 160 170 0 10 20 30 40 50 60 70 80 90 100
Figure 9. Current Derating, Case Figure 10. Typical Capacitance

MOTOROLA
SWITCHMODE Power Rectifiers MURD320

DPAK Surface Mount Package
. . . designed for use in switching power supplies, inverters and as MURD320 is a
free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device
following features:
• Ultrafast 35 Nanosecond Recovery Time
• Low Forward Voltage Drop ULTRAFAST RECTIFIERS
• Low Leakage 3 AMPERES
Mechanical Characteristics: 200 VOLTS
• Lead and Mounting Surface Temperature for Soldering 1 1
3
Purposes: 260°C Max. for 10 Seconds 4
• Shipped 75 units per plastic tube 3 CASE 369A–13
• Available in 16 mm Tape and Reel, 2500 units per reel, by DPAK
adding a “T4’’ suffix to the part number
• Marking: U320
MAXIMUM RATINGS
Average Rectified Forward Current (TC = 158°C, Rated VR) IF(AV) 3 Amps
(Surge applied at rated load conditions, halfwave, 60 Hz)
Operating Junction and Storage Temperature TJ, Tstg –65 to +175 °C
Thermal Resistance, Junction to Case RθJC 6 °C/W
Junction to Ambient (1) RθJA 80
Maximum Instantaneous Forward Voltage Drop (2) vF Volts
(iF = 3 Amps, TJ = 25°C) 0.95
(iF = 3 Amps, TJ = 125°C) 0.75
(TJ = 25°C, Rated dc Voltage) 5
(IF = 1 Amp, di/dt = 50 Amps/µs, VR = 30 V, TJ = 25°C) 35
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) 25
(1) Rating applies when surface mounted on the minimum pad sizes recommended.
Rev 1

MURD320
100 80
40 TJ = 175°C
70 20 150°C

8.0
50 4.0
2.0
0.8 100°C
30 0.4
0.2
20 0.08
0.04 25°C
0.02
0.008
10
0.004
0.002
7.0
0 20 40 60 80 100 120 140 160 180 200
175°C TJ = 25°C voltage grouping. Typical reverse current for lower voltage selections
2.0 can be estimated from these curves if VR is sufficiently below rated
VR.
150°C 100°C 14

F
1.0 13 SINE WAVE

12 SQUARE WAVE
0.7 11 5.0
10 dc
0.5
9.0 10
8.0
7.0 IPK/IAV = 20
0.3
6.0
0.2 5.0
4.0
3.0 TJ = 175°C
2.0
0.1
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

Figure 3. Average Power Dissipation
8.0 4.0

7.0 RqJC = 6°C/W 3.5
RqJA = 80°C/W
6.0 3.0
SURFACE MOUNTED ON
5.0 2.5
SINE WAVE MIN. PAD SIZE RECOMMENDED
4.0 OR 2.0
SQUARE WAVE dc
3.0 1.5 TJ = 175°C
dc SINE WAVE
2.0 TJ = 175°C 1.0 OR
SQUARE WAVE
1.0 0.5
0 0
100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200

MURD320
1000
500
300
C, CAPACITANCE (pF)
200
TJ = 25°C
100
50
30
20
10
0 10 20 30 40 50 60 70 80 90 100

MOTOROLA
SWITCHMODE Power Rectifiers MURD620CT

DPAK Surface Mount Package
. . . designed for use in switching power supplies, inverters and as MURD620CT is a
following features:
• Low Forward Voltage Drop ULTRAFAST RECTIFIERS
• Low Leakage 6 AMPERES
Mechanical Characteristics: 200 VOLTS
• Lead and Mounting Surface Temperature for Soldering 1
1
3
Purposes: 260°C Max. for 10 Seconds 4
• Shipped 75 units per plastic tube 3 CASE 369A–13
• Available in 16 mm Tape and Reel, 2500 units per reel, by PLASTIC
adding a “T4’’ suffix to the part number
• Marking: U620T
MAXIMUM RATINGS
Average Rectified Forward Voltage Per Diode IF(AV) 3 Amps
(TC = 140°C, Rated VR) Per Device 6
Peak Repetitive Forward Current IF 6 Amps
(Rated VR, Square Wave, 20 kHz, TC = 145°C) Per Diode
(Surge applied at rated load conditions, halfwave, 60 Hz)

Thermal Resistance, Junction to Case RθJC 9 °C/W
Junction to Ambient (1) RθJA 80

Maximum Instantaneous Forward Voltage Drop (2) vF Volts
(iF = 3 Amps, TC = 25°C) 1
(iF = 3 Amps, TC = 125°C) 0.96
(iF = 6 Amps, TC = 25°C) 1.2
(iF = 6 Amps, TC = 125°C) 1.13
(IF = 1 Amp, di/dt = 50 Amps/µs, VR = 30 V, TJ = 25°C) 35
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) 25
(1) Rating applies when surface mounted on the minimum pad sizes recommended.
Rev 1

MURD620CT
100 100
70 TJ = 175°C

10
150°C
50
1.0 100°C
30
20 0.1 25°C
0.01
10
7.0 0.001
0 20 40 60 80 100 120 140 160 180 200
Figure 2. Typical Leakage Current* (Per Leg)
175°C TJ = 25°C voltage grouping. Typical reverse current for lower voltage selections
VR.
150°C 100°C 14

F
1.0 13 5.0 SINE

12 10 WAVE
0.7 11
10 IPK/IAV = 20 dc
0.5
9.0
8.0
7.0 SQUARE
0.3
6.0 WAVE
0.2 5.0
4.0
3.0 TJ = 175°C
2.0
0.1
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 1. Typical Forward Voltage (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation (Per Leg)
8.0 4.0

7.0 RqJC = 9°C/W 3.5
RqJA = 80°C/W
6.0 3.0
TJ = 175°C
SURFACE MOUNTED ON
5.0 2.5 MIN. PAD SIZE RECOMMENDED
dc
4.0 2.0
SINE WAVE dc
3.0 OR 1.5 TJ = 175°C
SQUARE WAVE
2.0 1.0 SINE WAVE
OR
1.0 0.5 SQUARE WAVE
0 0
100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200
Figure 4. Current Derating, Case (Per Leg) Figure 5. Current Derating, Ambient (Per Leg)

MURD620CT
100
70
50
30
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
5.0
3.0
2.0
1.0
0 10 20 30 40 50 60 70 80 90 100
Figure 6. Typical Capacitance (Per Leg)

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MURHB840CT

D2PAK Power Surface Mount Package Motorola Preferred Device
Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state–of–the–art devices have the following features:
• Ultrafast 28 Nanosecond Recovery Times ULTRAFAST RECTIFIER
• 175°C Operating Junction Temperature 8.0 AMPERES
• Epoxy Meets UL94, VO @ 1/8″ 400 VOLTS
• High Temperature Glass Passivated Junction
• High Voltage Capability
• Low Leakage Specified @ 150°C Case Temperature
• Similar in Size to Industry Standard TO–220 Package
1
4 3
• Available in 24 mm Tape and Reel, 800 units per reel by
• Marking: UH840

Average Rectified Forward Current (Rated VR), TC = 120°C IF(AV) 4.0 Amps
Total Device 8.0
Peak Repetitive Forward Current IFM 8 Amps
Controlled Avalanche Energy WAVAL 20 mJ

Rev 1

MURHB840CT
Maximum Instantaneous Forward Voltage (2) (iF = 4.0 Amps, TC = 150°C) vF 1.9 Volts
(iF = 4.0 Amps, TC = 25°C) 2.2
Maximum Instantaneous Reverse Current (2) (Rated dc Voltage, TC = 150°C) iR 500 µA
Maximum Reverse Recovery Time trr 28 ns
(IF = 1.0 Amp, di/dt = 50 Amps/µs)
100 1000
50 500
TJ = 150°C
IR, REVERSE CURRENT ( µA)

TJ = 150°C 200
20
100
10 50 100°C
5 100°C 20
25°C 10
2
5 25°C
1 2
0.5 1
0.5
0.2 0.2
0.1 0.1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 50 100 150 200 250 300 350 400
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current, Per Leg
10 1000
I F, AVERAGE POWER DISSIPATION (WATTS)
RATED VR APPLIED
8 RθJC = 3°C/W
C, CAPACITANCE (pF)
100
6
DC
4 SQUARE
WAVE 10
0 1
110 120 130 140 150 160 170 180 0.01 0.1 1 10 100
Figure 3. Current Derating, Case Figure 4. Typical Capacitance, Per Leg

MURHB840CT

20
18 TJ = 175°C
16 SQUARE WAVE
DC
14
12
10
8
6
4
2
0
1 2 3 4 5 6 7 8 9 10

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MURB1620CT

• Similar in Size to Industrial Standard TO–220 Package 4
1
3 3
• Finish: All External Surfaces Corrosion Resistant and Terminal CASE 418B–02
Leads are Readily Solderable D2PAK
• Marking: U1620T
MAXIMUM RATING, PER LEG

Total Device, (Rated VR), TC = 150°C Total Device 16

Temperature for Soldering TL 260 °C
Rev 1

MURB1620CT
(iF = 8 Amp, TC = 150°C) 0.895
(iF = 8 Amp, TC = 25°C) 0.975
(IF = 1 Amp, di/dt = 50 Amp/µs) 35
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 Amp) 25
100 10 K
50
1.0 K
20 400
10 100
TJ = 175°C
5.0 20
2.0 4
100°C
1.0 TJ = 175°C 100°C 25°C 1
0.7 25°C
0.2
0.3
0.04
0.1 0.01
0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 180 200
vF, INSTANTANEOUS VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg*
I F(AV), AVERAGE POWER DISSIPATION (WATTS)
10 10
RATED VR APPLIED
9.0 RθJC = 3°C/W 9.0
TJ = 175°C
8.0 8.0
DC
7.0 7.0
SQUARE WAVE
6.0 6.0
DC
5.0 5.0
4.0 4.0
SQUARE WAVE
3.0 3.0
2.0 2.0
1.0 1.0
0 0
140 150 160 170 180 0 1 2 3 4 5 6 7 8 9 10
Figure 3. Current Derating Case, Per Leg Figure 4. Power Dissipation, Per Leg

MURB1620CT

1
D = 0.5
0.5
0.2 0.1 P(pk)

ZθJC(t) = r(t) RθJC
0.1 D curves apply for power
0.05
pulse train shown
0.01 t1
0.05 read time at T1
t2
SINGLE PULSE Duty Cycle, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t)
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1K
t, TIME (ms)
1K
300
TJ = 25°C
C, CAPACITANCE (pF)
100
30
10
1 10 100

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MURB1660CT

• High Voltage Capability to 600 V
• Short Heat Sink Tab Manufactured – Not Sheared! 4
• Similar in Size to Industrial Standard TO–220 Package 1
4
3 3
• Marking: U1660T
MAXIMUM RATING, PER LEG


Temperature for Soldering TL 260 °C
Rev 1

MURB1660CT
(iF = 8 Amp, TC = 150°C) 1.20
(iF = 8 Amp, TC = 25°C) 1.50
(IF = 1 Amp, di/dt = 50 Amp/µs) 60
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 Amp) 50
100 10 K
50
1.0 K
20 400
TJ = 150°C
10 25°C 100
40 TJ = 150°C
5.0
10
100°C
2.0
100°C 2.0
1.0 1.0
0.4
25°C
0.3 0.1
0.04
0.1 0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 100 200 300 400 500 600
I F(AV), AVERAGE POWER DISSIPATION (WATTS)
10 14
RATED VR APPLIED 13
9.0 RθJC = 2°C/W
12
8.0 11
DC SQUARE WAVE
7.0 10
9.0
6.0 DC
8.0
5.0 7.0
6.0
4.0
SQUARE WAVE 5.0
3.0 4.0
2.0 3.0
2.0 TJ = 175°C
1.0
1.0
0 0
140 150 160 170 180 0 1 2 3 4 5 6 7 8 9 10
Figure 3. Current Derating, Case, Per Leg Figure 4. Power Dissipation, Per Leg

MURB1660CT
1.0
D = 0.5
0.5
0.2 0.1 P(pk)

0.1 D curves apply for power
0.05
pulse train shown
0.01 t1
0.05 read time at T1
t2
SINGLE PULSE Duty Cycle, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t)
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1K
t, TIME (ms)
1K
300
TJ = 25°C
C, CAPACITANCE (pF)
100
30
10
1 10 100

MOTOROLA
SWITCHMODE Power Rectifiers MUR120

. . . designed for use in switching power supplies, inverters and as free MUR140
wheeling diodes, these state–of–the–art devices have the following features:
• Ultrafast 25, 50 and 75 Nanosecond Recovery Times MUR160
• 175°C Operating Junction Temperature MUR120, MUR140 and MUR160 are
• Low Forward Voltage Motorola Preferred Devices
• Low Leakage Current

ULTRAFAST RECTIFIERS
• Reverse Voltage to 600 Volts
1.0 AMPERE
Mechanical Characteristics: 200–400–600 VOLTS
Readily Solderable
part number
• Polarity: Cathode Indicated by Polarity Band CASE 59–04
PLASTIC
• Marking: U120, U140, U160
MAXIMUM RATINGS
MUR
Rating Symbol 120 140 160 Unit
Average Rectified Forward Current IF(AV) 1.0 @ TA = 130°C 1.0 @ TA = 120°C Amps
(Square Wave Mounting Method #3 Per Note 1)
(Surge applied at rated load conditions, halfwave,
Operating Junction Temperature and TJ, Tstg *65 to +175 °C
Storage Temperature
Maximum Thermal Resistance, Junction to Ambient RθJA See Note 1 °C/W
(iF = 1.0 Amp, TJ = 150°C) 0.710 1.05
(iF = 1.0 Amp, TJ = 25°C) 0.875 1.25
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 35 75
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 A) 25 50
(IF = 1.0 A, di/dt = 100 A/µs, IREC to 1.0 V)
Rev 3

MUR120 MUR140 MUR160
MUR120
10 100
TJ = 175°C
7.0

10
5.0
1.0
100°C
3.0
TJ = 175°C 100°C
2.0 0.1
25°C
0.01 25°C
1.0
0.7 0.001
0 20 40 60 80 100 120 140 160 180 200
0.2 can be estimated from these same curves if VR is sufficiently below
rated VR.
IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 5.0

F
0.1
0.07 4.0 RATED VR

RqJA = 50°C/W
0.05
3.0
0.03
2.0 dc
0.02
SQUARE WAVE
1.0
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 50 100 150 200 250
Figure 1. Typical Forward Voltage TA, AMBIENT TEMPERATURE (°C)

Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
5.0 50
+ 20
TJ = 175°C I TJ = 25°C
4.0 I 10
AV 30
C, CAPACITANCE (pF)
5.0
3.0 20
2.0
10
dc
1.0
7.0
SQUARE WAVE
0 5.0
0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50
IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

MUR140, MUR160
10 400
100 TJ = 175°C
7.0

40
5.0
10
4.0 100°C
3.0
TJ = 175°C 100°C 1.0
2.0 0.4
25°C
0.1 25°C
0.04
1.0
0.01
0.7 0.004
0 100 200 300 400 500 600 700
rated VR.
5.0

F
0.1
0.07 4.0 RATED VR

RqJA = 50°C/W
0.05
3.0
0.03
2.0
0.02 dc
1.0
SQUARE WAVE
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0

5.0 20
TJ = 175°C
4.0 TJ = 25°C
5.0
C, CAPACITANCE (pF)
10
3.0 (CAPACITIVE LOAD) 10
7.0
+ 20
I
PK dc
2.0 I 5.0
AV
SQUARE WAVE
1.0
3.0
0 2.0
0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50

NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to

ambient (RθJA) for the mountings shown is to be used
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
Mounting Lead Length, L

Method 1/8 1/4 1/2 Units
1 52 65 72 °C/W
2 RθJA 67 80 87 °C/W
3 50 °C/W
MOUNTING METHOD 1
L L
MOUNTING METHOD 2
L L
ÉÉÉÉÉÉÉÉÉÉÉÉÉ Vector Pin Mounting
ÉÉ
MOUNTING METHOD 3
ÉÉ L = 3/8 ″
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ Board Ground Plane
P.C. Board with

1–1/2″ X 1–1/2 ″ Copper Surface

MOTOROLA
SWITCHMODE Power Rectifiers MUR190E

Ultrafast “E’’ Series with High Reverse
Energy Capability MUR1100E
. . . designed for use in switching power supplies, inverters and as MUR1100E is a
following features:
• 20 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching ULTRAFAST
Inductive Load Circuits RECTIFIERS
• Ultrafast 75 Nanosecond Recovery Time 1.0 AMPERE
• 175°C Operating Junction Temperature 900–1000 VOLTS
• Lead and Mounting Surface Temperature for Soldering CASE 59–04
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’
• Marking: U190E, U1100E
MAXIMUM RATINGS
MUR
Rating Symbol 190E 1100E Unit
Average Rectified Forward Current (Square Wave) IF(AV) 1.0 @ TA = 95°C Amps
Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 °C
Rev 1

MUR190E MUR1100E
MUR
(iF = 1.0 Amp, TJ = 150°C) 1.50
(iF = 1.0 Amp, TJ = 25°C) 1.75
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 100
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 75
Maximum Forward Recovery Time tfr 75 ns
(IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 10 mJ

MUR190E MUR1100E
20 1000
TJ = 175°C

10 100
7.0
10
100°C
5.0
1.0
3.0
TJ = 175°C 25°C 25°C
2.0 0.1
100°C
1.0 0.01
0 100 200 300 400 500 600 700 800 900 1000
0.5 Figure 2. Typical Reverse Current*

0.3 grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
0.2
5.0
0.1 IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

4.0 RATED VR
0.07
RqJA = 50°C/W
0.05 3.0
0.03
2.0
dc
0.02
SQUARE WAVE
1.0
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0

5.0 20
10 5.0
+ 20
I
(CAPACITIVE LOAD) PK TJ = 25°C
I
4.0 AV
C, CAPACITANCE (pF)
10
3.0
dc 7.0
TJ = 175°C
2.0 5.0
SQUARE WAVE
1.0
3.0
0 2.0
0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50

MUR190E MUR1100E
+VDD
IL 40 mH COIL
VD BVDUT
MERCURY ID
SWITCH
IL ID
DUT
S1
VDD
t0 t1 t2 t
Figure 6. Test Circuit Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in ponent resistances. Assuming the component resistive ele-
Figure 6 was used to demonstrate the controlled avalanche ments are small Equation (1) approximates the total energy
capability of the new “E’’ series Ultrafast rectifiers. A mercury transferred to the diode. It can be seen from this equation
switch was used instead of an electronic switch to simulate a that if the VDD voltage is low compared to the breakdown
noisy environment when the switch was being opened. voltage of the device, the amount of energy contributed by
When S1 is closed at t0 the current in the inductor IL ramps the supply during breakdown is small and the total energy
up linearly; and energy is stored in the coil. At t1 the switch is can be assumed to be nearly equal to the energy stored in
opened and the voltage across the diode under test begins to
the coil during the time when S1 was closed, Equation (2).
rise rapidly, due to di/dt effects, when this induced voltage
The oscilloscope picture in Figure 8, shows the information
reaches the breakdown voltage of the diode, it is clamped at
obtained for the MUR8100E (similar die construction as the
BVDUT and the diode begins to conduct the full load current
MUR1100E Series) in this test circuit conducting a peak cur-
which now starts to decay linearly through the diode, and
goes to zero at t2. rent of one ampere at a breakdown voltage of 1300 volts,
By solving the loop equation at the point in time when S1 is and using Equation (2) the energy absorbed by the
opened; and calculating the energy that is transferred to the MUR8100E is approximately 20 mjoules.
diode it can be shown that the total energy transferred is Although it is not recommended to design for this condi-
equal to the energy stored in the inductor plus a finite amount tion, the new “E’’ series provides added protection against
of energy from the VDD power supply while the diode is in those unforeseen transient viruses that can produce unex-
breakdown (from t1 to t2) minus any losses due to finite com- plained random failures in unfriendly environments.
ǒ Ǔ
EQUATION (1): CH1 500V A 20ms 953 V VERT CHANNEL 2:
CH2 50mV IL
W
AVAL
[ 12 LI 2LPK BV
BV
DUT
–V
0.5 AMPS/DIV.
DUT DD
CHANNEL 1:
VDUT
EQUATION (2): 500 VOLTS/DIV.
W
AVAL
[ 12 LI 2LPK
TIME BASE:
20 ms/DIV.
1 ACQUISITIONS 217:33 HRS
SAVEREF SOURCE STACK
CH1 CH2 REF REF
Figure 8. Current–Voltage Waveforms

MUR190E MUR1100E
Data shown for thermal resistance junction to

ambient (RθJA) for the mountings shown is to be used
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
Mounting Lead Length, L

Method 1/8 1/4 1/2 Units
1 52 65 72 °C/W
2 RθJA 67 80 87 °C/W
3 50 °C/W
MOUNTING METHOD 1
L L
MOUNTING METHOD 2
L L
ÉÉÉÉÉÉÉÉÉÉÉÉÉ Vector Pin Mounting
ÉÉ
MOUNTING METHOD 3
ÉÉ
ÉÉ
L = 3/8 ″
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane
P.C. Board with

1–1/2″ X 1–1/2 ″ Copper Surface

MOTOROLA

. . . designed for use in switching power supplies, inverters and as free
wheeling diodes, these state–of–the–art devices have the following features: MUR460
• Ultrafast 25, 50 and 75 Nanosecond Recovery Times
MUR420 and MUR460 are
• 175°C Operating Junction Temperature Motorola Preferred Devices
• Reverse Voltage to 600 Volts ULTRAFAST
RECTIFIERS
4.0 AMPERES
200–600 VOLTS
Readily Solderable
part number
• Marking: U420, U460
CASE 267–03
PLASTIC
MAXIMUM RATINGS
MUR
Rating Symbol 420 460 Unit
Average Rectified Forward Current (Square Wave) IF(AV) 4.0 @ TA = 80°C 4.0 @ TA = 40°C Amps
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
(iF = 3.0 Amps, TJ = 150°C) 0.710 1.05
(iF = 3.0 Amps, TJ = 25°C) 0.875 1.25
(iF = 4.0 Amps, TJ = 25°C) 0.890 1.28
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 35 75
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 25 50
(IF = 1.0 A, di/dt = 100 A/µs, Recovery to 1.0 V)
Rev 3

MUR420 MUR460
MUR420
100 80
40 TJ = 175°C
70 20

50 8.0
4.0
2.0
100°C
30 0.8
0.4
0.2
20
0.08
0.04
0.02
25°C
0.008
10
0.004
0.002
7.0
0 20 40 60 80 100 120 140 160 180 200
5.0
3.0
2.0
25°C

10
TJ = 175°C 100°C Rated VR
1.0 RqJA = 28°C/W
8.0
0.7
0.5 6.0
dc
0.3 4.0 SQUARE WAVE
0.2
2.0
0.1 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 150 200 250
vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)
10
200
9.0
(Capacitive IPK =20 10 5.0
8.0 TJ = 25°C
Load) IAV
7.0 100
C, CAPACITANCE (pF)
90
6.0 80
dc 70
5.0 60
4.0 50
SQUAREWAVE
3.0 40
2.0
30
1.0
0 20
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40 50

MUR420 MUR460
MUR460
20 400
200
TJ = 175°C
80

40
10 20
8.0 100°C
7.0 4.0
2.0
5.0 0.8
0.4 25°C
0.2
3.0
TJ = 175°C 0.08
0.04
2.0 0.02
25°C
0.008
0.004
100°C 0 100 200 300 400 500 600 700
0.7
0.5

0.3 10
Rated VR
0.2 RqJA = 28°C/W
8.0
0.1 6.0
0.07
4.0 dc
0.05
SQUARE WAVE
2.0
0.03
0.02 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 50 100 150 200 250
14 40
SQUAREWAVE
12 30
5.0
TJ = 25°C
10 dc
20
C, CAPACITANCE (pF)
10
8.0
(Capacitive IPK =20
6.0 Load) IAV 10
9.0
8.0
4.0 7.0
6.0
2.0 5.0
0 4.0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 10 20 30 40 50

MUR420 MUR460
Data shown for thermal resistance junction–to–ambient

guideline values for preliminary engineering or in case the tie
Mounting Lead Length, L (IN)

Method 1/8 1/4 1/2 3/4 Units
1 50 51 53 55 °C/W
2 RθJA 58 59 61 63 °C/W
3 28 °C/W
MOUNTING METHOD 1
P.C. Board Where Available Copper

Surface area is small.
L L
MOUNTING METHOD 2
Vector Push–In Terminals T–28
L L
MOUNTING METHOD 3
P.C. Board with
ÉÉ
1–1/2 ″ x 1–1/2 ″ Copper Surface
ÉÉ
ÉÉ
L = 1/2 ″
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane

MOTOROLA

Energy Capability
MUR4100E
MUR4100E is a
. . . designed for use in switching power supplies, inverters and as Motorola Preferred Device
free wheeling diodes, these state–of–the–art devices have the
following features:
• 20 mJ Avalanche Energy Guaranteed
ULTRAFAST
• Excellent Protection Against Voltage Transients in Switching
4.0 AMPERES
900–1000 VOLTS
Leads are Readily Solderable CASE 267–03
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’
MAXIMUM RATINGS
Rating Symbol MUR490E MUR4100E Unit
Average Rectified Forward Current (Square Wave) IF(AV) 4.0 @ TA = 35°C Amps
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
Maximum Thermal Resistance, Junction to Case RθJC See Note 1 °C/W
Rev 2

MUR490E MUR4100E
(iF = 3.0 Amps, TJ = 150°C) 1.53
(iF = 3.0 Amps, TJ = 25°C) 1.75
(iF = 4.0 Amps, TJ = 25°C) 1.85
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 100
Maximum Forward Recovery Time tfr 75 ns
(IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 20 mJ

MUR490E MUR4100E
MUR490E, MUR4100E
20 1000
400 TJ = 175°C
200

100
TJ = 175°C 25°C
40
10 20 100°C
100°C 10
7.0 4.0
2.0
5.0 1.0 25°C
0.4
0.2
0.1
3.0
0.04 *The curves shown are typical for the highest voltage
0.02 device in the voltage grouping. Typical reverse current
0.01
2.0 for lower voltage selections can be estimated from these
0.004 same curves if VR is sufficiently below rated VR.
0.002
0.001
0 100 200 300 400 500 600 700 800 900 1000
0.7
0.5

0.3 10
Rated VR
0.2 RqJA = 28°C/W
8.0
0.1 6.0
0.07
4.0 dc
0.05
SQUARE WAVE
2.0
0.03
0.02 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0 50 100 150 200 250
10 70
9.0 TJ = 175°C 60
50
8.0
5.0
7.0 40
C, CAPACITANCE (pF)
TJ = 25°C
6.0
10 30
5.0 (Capacitive IPK =20
Load) IAV dc 20
4.0
3.0
SQUAREWAVE
2.0
10
1.0 9.0
8.0
0 7.0
0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50

MUR490E MUR4100E
+VDD
IL
40 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH ID
IL
DUT
S1
VDD
t0 t1 t2 t
The unclamped inductive switching circuit shown in ponent resistances. Assuming the component resistive ele-
Figure 6 was used to demonstrate the controlled avalanche ments are small Equation (1) approximates the total energy
capability of the new “E’’ series Ultrafast rectifiers. A mercury transferred to the diode. It can be seen from this equation
switch was used instead of an electronic switch to simulate a that if the VDD voltage is low compared to the breakdown
noisy environment when the switch was being opened. voltage of the device, the amount of energy contributed by
When S1 is closed at t0 the current in the inductor IL ramps the supply during breakdown is small and the total energy
up linearly; and energy is stored in the coil. At t1 the switch is can be assumed to be nearly equal to the energy stored in
opened and the voltage across the diode under test begins to
the coil during the time when S1 was closed, Equation (2).
rise rapidly, due to di/dt effects, when this induced voltage
The oscilloscope picture in Figure 8, shows the information
reaches the breakdown voltage of the diode, it is clamped at
obtained for the MUR8100E (similar die construction as the
BVDUT and the diode begins to conduct the full load current
MUR4100E Series) in this test circuit conducting a peak cur-
which now starts to decay linearly through the diode, and
goes to zero at t2. rent of one ampere at a breakdown voltage of 1300 volts,
By solving the loop equation at the point in time when S1 is and using Equation (2) the energy absorbed by the
opened; and calculating the energy that is transferred to the MUR8100E is approximately 20 mjoules.
diode it can be shown that the total energy transferred is Although it is not recommended to design for this condi-
equal to the energy stored in the inductor plus a finite amount tion, the new “E’’ series provides added protection against
of energy from the VDD power supply while the diode is in those unforeseen transient viruses that can produce unex-
breakdown (from t1 to t2) minus any losses due to finite com- plained random failures in unfriendly environments.
ǒ Ǔ
EQUATION (1): CHANNEL 2:
CH1 500V A 20ms 953 V VERT
IL
CH2 50mV
W
AVAL
[ 12 LI 2LPK BV
BV
DUT
–V
0.5 AMPS/DIV.
DUT DD
CHANNEL 1:
VDUT
W
AVAL
[ 12 LI 2LPK
TIME BASE:
20 ms/DIV.
CH1 CH2 REF REF

MUR490E MUR4100E
Data shown for thermal resistance junction–to–ambient

guideline values for preliminary engineering or in case the tie
Mounting Lead Length, L (IN)

Method 1/8 1/4 1/2 3/4 Units
1 50 51 53 55 °C/W
2 RθJA 58 59 61 63 °C/W
3 28 °C/W
MOUNTING METHOD 1
P.C. Board Where Available Copper

Surface area is small.
L L
MOUNTING METHOD 2
Vector Push–In Terminals T–28
L L
MOUNTING METHOD 3
P.C. Board with
É
1–1/2 ″ x 1–1/2 ″ Copper Surface
É
É
L = 1/2 ″
É
É
É
É
É
Board Ground Plane

MOTOROLA

. . . designed for use in switching power supplies, inverters and as free MUR620CT
• Ultrafast 35 Nanosecond Recovery Time Motorola Preferred Device

Mechanical Characteristics: ULTRAFAST
• Case: Epoxy, Molded RECTIFIER
• Weight: 1.9 grams (approximately) 6 AMPERES
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are 200 VOLTS
Readily Solderable
4
• Marking: U620
1
2, 4 1
3 2
3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS
Average Rectified Forward Voltage Per Diode IF(AV) 3.0 Amps
(Rated VR) TC = 130°C Total Device 6.0
Peak Repetitive Forward Current Per Diode Leg IFRM 6.0 Amps

Rating Symbol Typical Maximum Unit
Thermal Resistance, Junction to Case RθJC 5.0–6.0 7.0 °C/W

(iF = 3.0 Amps, TC = 150°C) 0.80 0.895
(iF = 3.0 Amps, TC = 25°C) 0.94 0.975
Instantaneous Reverse Current (1) iR µA
(Rated dc Voltage, TC = 150°C) 2.0–10 250
(Rated dc Voltage, TC = 25°C) 0.01–3.0 5.0
Reverse Recovery Time trr 20–30 35 ns
Rev 1

MUR620CT
10 100
7.0 40
5.0 20 TJ = 175°C
10
3.0 4.0 150°C
2.0 2.0
1.0
1.0 0.4 100°C
0.2
0.7
0.1
0.5
0.04
0.3 TJ = 175°C 25°C 0.02
0.01 25°C
0.2
0.004
150°C 100°C 0.002
0.1 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 180 200

8.0 7.0
Rated VR Applied RqJA = 16°C/W with
7.0 6.0 a typical TO–220 heat sink
dc
6.0
5.0 SQUARE WAVE
DC
5.0
4.0
4.0 dc
SQUARE WAVE 3.0
3.0
2.0 SQUARE WAVE
2.0
1.0 RqJA = 60°C/W
1.0
(free air, no heat sink)
0 0
100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 200
Figure 3. Total Device Current Derating, Case Figure 4. Total Device Current Derating, Ambient
8.0
7.0
SQUARE WAVE
DC
6.0
5.0
4.0
3.0
2.0
1.0
0
0 1 2 3 4 5 6 7 8

MOTOROLA

. . . designed for use in switching power supplies, inverters and as MURH840CT
following features:

• Popular TO–220 Package ULTRAFAST
• Epoxy Meets UL94, VO @ 1/8″ RECTIFIER
• High Temperature Glass Passivated Junction 8.0 AMPERES
• High Voltage Capability to 400 Volts 400 VOLTS
• Current Derating @ Both Case and Ambient Temperatures
Mechanical Characteristics: 4
Leads are Readily Solderable 2, 4 1
2
• Lead Temperature for Soldering Purposes: 260°C Max. for 3 3
10 Seconds
• Marking: UH840 TO–220AB
MAXIMUM RATINGS
Average Rectified Forward Current Per Leg IF(AV) 4.0 Amps
Total Device, (Rated VR), TC = 120°C Total Device 8.0
Peak Repetitive Forward Current Per Diode Leg IFM 16 Amps
THERMAL CHARACTERISTICS, PER DIODE LEG

ELECTRICAL CHARACTERISTICS, PER DIODE LEG

(iF = 4.0 Amps, TC = 150°C) 1.9
(iF = 4.0 Amps, TC = 25°C) 2.2
Rev 1

MURH840CT
100 1000
500
TJ = 150°C
IR, REVERSE CURRENT ( µA)

200
50 100
50 100°C
20
10
20 5 25°C
TJ = 150°C 2
100°C 1
25°C 0.5
10
0.2
0.1
0 50 100 150 200 250 300 350 400
Figure 2. Typical Reverse Current, Per Leg

7
1 6
5
DC
0.5
4
SQUARE
3
WAVE
0.2 2
0.1 0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 20 40 60 80 100 120 140 160 180 200
Figure 1. Typical Forward Voltage Figure 3. Forward Current Derating, Ambient, Per Leg
10 1000
I F, AVERAGE POWER DISSIPATION (WATTS)
RATED VR APPLIED
8
C, CAPACITANCE (pF)
100
6 DC
SQUARE
4
WAVE 10
0 1
110 120 130 140 150 160 170 180 0.01 0.1 1 10 100
Figure 4. Current Derating, Case, Per Leg Figure 5. Typical Capacitance, Per Leg

MURH840CT

20
18
SQUARE WAVE
16
DC
14
12
10
8
6
4
2
0
1 2 3 4 5 6 7 8 9 10

MOTOROLA
 Data Sheet
Designer's
SWITCHMODE Power Rectifier MURH860CT

. . . designed for use in switching power supplies, inverters and as free Motorola Preferred Device
wheeling diodes, these state-of-the-art devices have the following features:
• Ultrafast 35 Nanosecond Recovery Times
• Popular TO-220 Package ULTRAFAST RECTIFIER
• Epoxy Meets UL94, VO @ 1/8″ 8.0 AMPERES
• High Temperature Glass Passivated Junction 600 VOLTS
• High Voltage Capability to 600 Volts

2, 4
Leads are Readily Solderable 3 2
3
Seconds CASE 221A–06
• Shipped 50 units per plastic tube TO–220AB
• Marking: UH860

Total Device, (Rated VR), TC = 120°C Total Device 8.0
(iF = 4.0 Amps, TC = 150°C) 2.5
(iF = 4.0 Amps, TC = 25°C) 2.8
Rev 1

MURH860CT
100
i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 50
150°C
I R , REVERSE LEAKAGE CURRENT (µA)

50
20 20
TJ = 150°C 85°C
10 10
25°C
7 5
5 100°C
2
3
2 1 25°C
0.5
1
0.7 0.2
0.5 0.1
0.3 0.05
0.2
0.02
0.1 0.01
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 50 100 200 300 400 500 600
v F , INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Leakage Current, Per Leg

40 10
36 9 RATED VOLTAGE APPLIED
TJ = 150°C RθJC = 3°C/W
32 8
28 7
24 6
SQUARE
20 WAVE 5
SQUARE DC
16 4
DC
12 3
8 2
4 1
0
0 1 2 3 4 5 6 7 40 60 80 100 120 140 160 180
Figure 3. Typical Forward Dissipation, Per Leg Figure 4. Typical Current Derating, Case, Per Leg
32 32 140
Qrr , RECOVERED STORED CHARGE (nC)
130
28 28
Trr , REVERSE RECOVERY TIME (ns)
120
Trr 110
24 24
C, CAPACITANCE (pF)
100
20 20 90
Qrr 80
16 16 70
60
12 12 50
Vr = 30 V 40
8 8 30
di/dt = 50 A/µs
4 4 20
10
0 0 0
0 1 2 3 4 5 6 7 8 0.1 1 10 100
Figure 5. Typical Recovery Characteristics Figure 6. Typical Capacitance, Per Leg

MOTOROLA
SWITCHMODE Power Rectifiers MUR1620CT

MUR1640CT
MUR1660CT
• Ultrafast 35 and 60 Nanosecond Recovery Times
• Epoxy Meets UL94, VO @ 1/8″
• High Temperature Glass Passivated Junction ULTRAFAST
RECTIFIERS
8 AMPERES
200–400–600 VOLTS
4
Readily Solderable
3
• Marking: U1620, U1640, U1660 1
CASE 221A–06
2, 4
TO–220AB
3
MAXIMUM RATINGS
MUR
Rating Symbol 1620CT 1640CT 1660CT Unit
Average Rectified Forward Current Per Leg IF(AV) 8.0 Amps
Peak Rectified Forward Current Per Diode Leg IFM 16 Amps
THERMAL CHARACTERISTICS, PER DIODE LEG

ELECTRICAL CHARACTERISTICS, PER DIODE LEG

(iF = 8.0 Amps, TC = 150°C) 0.895 1.00 1.20
(iF = 8.0 Amps, TC = 25°C) 0.975 1.30 1.50
(Rated dc Voltage, TC = 25°C) 5.0 10
(IF = 1.0 Amp, di/dt = 50 Amps/µs) 35 60
(IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 Amp) 25 50
Rev 2

MUR1620CT MUR1640CT MUR1660CT
100 800
400
70 200

80 TJ = 175°C
50 40
20
8.0
30 4.0 100°C
2.0
20 0.8
0.4 25°C
0.2
TJ = 175°C 100°C
0.08
10
0.04
0.02
7.0
25°C 0 20 40 60 80 100 120 140 160 180 200
Figure 2. Typical Reverse Current, Per Leg*
rated VR.
IF(AV) , AVERAGE POWER DISSIPATION (WATTS)

10
1.0
9.0 RATED VR APPLIED
0.7 8.0
0.5 7.0
6.0
0.3 5.0
4.0 dc
0.2
3.0
2.0 SQUARE WAVE
0.1 1.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 140 145 150 155 160 165 170 175 180
Figure 1. Typical Forward Voltage, Per Leg TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating, Case, Per Leg
10
14
RqJA = 16°C/W
9.0 TJ = 175°C
12 RqJA = 60°C/W
dc (NO HEATSINK) 8.0 SQUARE WAVE
10 7.0 dc
6.0
8.0
SQUARE WAVE 5.0
6.0 4.0
4.0 dc 3.0
2.0
2.0 SQUARE WAVE
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 4. Current Derating, Ambient, Per Leg Figure 5. Power Dissipation, Per Leg

100 800
400
70 200

TJ = 175°C
80
50 40 150°C
20
8.0
30 4.0 100°C
2.0
TJ = 175°C 100°C
20 0.8
25°C 0.4
0.2 25°C
0.08
10
0.04
0.02
7.0
0 50 100 150 200 250 300 350 400 450 500
VR.

10
1.0
0.7 8.0
0.5 7.0
6.0
0.3 5.0
4.0 dc
0.2
3.0
2.0 SQUARE WAVE
0.1 1.0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0
10
14
RqJA = 16°C/W TJ = 175°C SQUARE WAVE

9.0
12 RqJA = 60°C/W dc
(NO HEAT SINK) 8.0
10 7.0
dc
6.0
8.0
5.0
6.0 SQUARE WAVE
4.0
4.0 dc 3.0
2.0
2.0 SQUARE WAVE
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

100 800
400
70 200 TJ = 150°C

80
50 40
20 100°C
8.0
30 4.0
TJ = 150°C 2.0
20 0.8 25°C
0.4
0.2
100°C
0.08
10 25°C 0.04
0.02
7.0
100 200 300 400 500 600
rated VR.

10
1.0
0.7 8.0
0.5 7.0
6.0
0.3 5.0
4.0 dc
0.2
3.0
2.0 SQUARE WAVE
0.1 1.0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0
14
10
RqJA = 16°C/W 13 SQUARE WAVE

9.0 TJ = 175°C
RqJA = 60°C/W 12
8.0 dc
(NO HEAT SINK) 11
7.0 10
dc
9.0
6.0
SQUARE WAVE 8.0
5.0 7.0
4.0 6.0
dc 5.0
3.0 4.0
2.0 3.0
SQUARE WAVE 2.0
1.0
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10


1.0
D = 0.5
0.5
0.2
0.1
0.1 0.05 ZθJC(t) = r(t) RθJC
P(pk)
0.05 D CURVES APPLY FOR POWER
0.01 t1 PULSE TRAIN SHOWN
t2 READ TIME AT T1
0.02 SINGLE PULSE DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
1000
MUR1620CT THRU 1660CT
MUR1605CT THRU 1615CT
300
C, CAPACITANCE (pF)
TJ = 25°C
100
30
10
1.0 10 100

MOTOROLA
SWITCHMODE Dual Ultrafast

Power Rectifier MUR1620CTR
. . . designed for use in negative switching power supplies, inverters and as free
wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast
Rectifiers, makes a single phase full–wave bridge. These state–of–the–art
devices have the following features:
• Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package) ULTRAFAST
• Ultrafast 35 Nanosecond Reverse Recovery Times RECTIFIER
• Exhibits Soft Recovery Characteristics 16 AMPERES
200 VOLTS
• Epoxy Meets UL94, VO @ 1/8″ 4
• Complement to MUR1605CT Series of Common Cathode Devices
Mechanical Characteristics: 1
• Case: Epoxy, Molded 2, 4 1
3
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable CASE 221A–06
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO–220AB
STYLE 7
• Marking: U1620R

Average Rectified Forward Voltage, (Rated VR), TC = 160°C IF(AV) 8.0 Amps
Per Leg 16
Per Total Device
Peak Repetitive Surge Current, Per Diode IFM 16 Amps
THERMAL CHARACTERISTICS (Per Leg)

ELECTRICAL CHARACTERISTICS (Per Leg)
(iF = 8.0 Amps, TC = 25°C) 1.2
(iF = 8.0 Amps, TC = 150°C) 1.1
(IF = 1.0 Amp, di/dt = 50 Amps/µs) 85
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
Rev 1

MUR1620CTR
100 1000
500 TJ = 175°C
70 200

100 150°C
50 50
20 100°C
10
30 5 * The curves shown are typical for the highest voltage device in
2 the voltage grouping. Typical reverse current for lower voltage
20 1 selections can be estimated from these same curves if VR is
0.5 sufficiently below rated VR.
0.2
0.1
10 0.05
25°C
0.02
7.0 0.01
TJ = 175°C 0 20 40 60 80 100 120 140 160 180 200
Figure 2. Typical Reverse Current* (Per Leg)
150°C
3.0
100°C
2.0

16
25°C
1.0 14
RATED VR APPLIED
0.7 12
RqJC = 2°C/W
10
0.5
8.0
dc
0.3 6.0 SQUARE WAVE
0.2 4.0
2.0
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 140 150 160 170 180
vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)
Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Current Derating, Case (Per Leg)
16
16
TJ = 175°C
14 14
RqJA = 16°C/W
12 12
dc
10 10 SQUARE
WAVE
8.0 8.0
dc
SQUARE
6.0 WAVE 6.0
4.0 4.0
2.0 2.0
0 0
0 25 50 75 100 125 150 175 200 0 2.0 4.0 6.0 8.0 10 12 14 16
Figure 4. Current Derating, Ambient (Per Leg) Figure 5. Power Dissipation (Per Leg)

MUR1620CTR
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0
D = 0.5
0.5
0.2 0.1
0.1 0.05
0.01 P(pk)
t1 PULSE TRAIN SHOWN
SINGLE PULSE t2 READ TIME AT T1
0.02 DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
1000
900
800
700
C, CAPACITANCE (pF)
600
500
400
300
200
100
0
0.1 0.2 0.3 0.5 0.7 1.0 0.2 0.3 0.5 0.7 10 20 30 50 70 100

MOTOROLA
 Data Sheet
MUR5150E
Designer's
SCANSWITCH Power Rectifier

For Use As A Damper Diode Motorola Preferred Device
In High and Very High Resolution Monitors

SCANSWITCH
The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically RECTIFIER
designed for use as a damper diode in horizontal deflection circuits for high and 5.0 AMPERES
very high resolution monitors. In these applications, the outstanding perform- 1500 VOLTS
ance of the MUR5150E is fully realized when paired with the appropriate 1500V
SCANSWITCH Bipolar Power Transistor.
• 1500 V Blocking Voltage 4

• Peak Transient Overshoot Voltage Specified, 17 Volts (typical)
• Forward Recovery Time Specified, 175 ns (typical)
• Epoxy Meets UL94, VO at 1/8″ 1
3
• Finish: All External Surfaces Corrosion Resistant and Terminal CASE 221B–03
Leads are Readily Solderable (TO–220AC)
Seconds
• Marking: U5150E
MAXIMUM RATINGS
Average Rectified Forward Current, (Rated VR), TC = 100°C IF(AV) 5.0 Amps
Non-Repetitive Peak Surge Current IFSM 100 Amps
Rev 1

MUR5150E
(iF = 2.0 Amps, TJ = 25°C) 1.7 2.0
(iF = 5.0 Amps, TJ = 25°C) 2.0 2.4
Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 Amps/µs) trr 130 175 ns
Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/µs) tfr 175 225 ns
Peak Transient Overshoot Voltage VRFM 17 20 Volts

MUR5150E
i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 1000
I R , REVERSE LEAKAGE CURRENT ( µ A)

50
100
20
10 TJ = 125°C 85°C
10 TJ = 125°C
5 25°C
1
2 80°C
1.0 0.1
25°C
0.5
0.01
0.2
0.1 0.001
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 0.3 K 0.6 K 0.9 K 1.2 K 1.5 K


20 8.0
TJ = 125°C
17.5 7.0 (RATED VR APPLIED)
RθJC = 2.0°C/W
15 6.0
12.5 SQUARE 5.0

WAVE
10 4.0
dc
7.5 3.0
SQUARE dc
5 WAVE
2.0
2.5
F(AV)
1.0
F(AV)
I
P
0 1 2 3 4 5 6 7 8 85 90 95 100 105 110 115 120 125

IF(AV), AVG FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C)
Figure 3. Forward Power Dissipation Figure 4. Current Derating Case
250 300 200

VR = 30 V
Q RR , STORED RECOVERY CHARGE (nC)

225 270 180
T RR , REVERSE RECOVERY TIME (ns)
TYPICAL CAPACITANCE AT
vv
200 0 V = 240 pF 240 160
100 kHz f 1.0 MHz
C T , CAPACITANCE (pF)
di/dt = 100 A/µs

175 210 140
150 180 50 A/µs 120
125 150 100
100 120 50 A/µs 80
75 90 100 A/µs 60
50 60 40
25 30 20
0 0 0
0.1 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (AMPS)
STORED RECOVERY CHARGE
REVERSE RECOVERY TIME
Figure 6. Typical Reverse Switching Characteristics

MOTOROLA

. . . designed for use in switching power supplies, inverters and as MUR840
following features: MUR860
• Ultrafast 25, 50 and 75 Nanosecond Recovery Time Motorola Preferred Devices

• Epoxy Meets UL94, VO @ 1/8″ ULTRAFAST
8 AMPERES
200–400–600 VOLTS

1
• Lead Temperature for Soldering Purposes: 260°C Max. for
10 Seconds 3
• Shipped 50 units per plastic tube CASE 221B–03
• Marking: U820, U840, U860 TO–220AC
MAXIMUM RATINGS
MUR
Total Device, (Rated VR), TC = 150°C
Operating Junction Temperature and Storage Temperature TJ, Tstg –65 to +175 °C
(iF = 8.0 Amps, TC = 150°C) 0.895 1.00 1.20
(iF = 8.0 Amps, TC = 25°C) 0.975 1.30 1.50
(IF = 1.0 Amp, di/dt = 50 Amps/µs) 35 60
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 25 50
Rev 3

MUR820
100 1000
70

100 TJ = 175°C
50
10
100°C
30
20 1.0 25°C
0.1
10
7.0 0.01
0 20 40 60 80 100 120 140 160 180 200
3.0
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
2.0
10

TJ = 175°C 100°C 25°C
1.0 9.0 RATED VR APPLIED
8.0 dc
0.7
7.0
0.5 6.0
SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 140 150 160 170 180
Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case
14 10
RqJA = 16°C/W
9.0 TJ = 175°C
12 RqJA = 60°C/W
dc (NO HEAT SINK) 8.0
10 7.0 SQUARE WAVE
SQUARE WAVE 6.0 dc
8.0
5.0
6.0 4.0
4.0 dc 3.0
2.0
2.0 SQUARE WAVE
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 4. Current Derating, Ambient Figure 5. Power Dissipation

MUR840
100 1000
70 TJ = 175°C

100
50 150°C
10 100°C
30
25°C
20 1.0
0.1
10
7.0 0.01
0 50 100 150 200 250 300 350 400 450 500
TJ = 175°C 25°C Figure 7. Typical Reverse Current*
100°C grouping. Typical reverse current for lower voltage selections can be
2.0 estimated from these same curves if VR is sufficiently below rated VR.
10
1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 9.0 RATED VR APPLIED

8.0 dc
0.7
7.0
0.5 6.0
SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180
14 10
RqJA = 16°C/W
9.0 TJ = 175°C
12 RqJA = 60°C/W
(NO HEAT SINK) 8.0
10 dc 7.0 SQUARE WAVE
6.0 dc
8.0
5.0
6.0 SQUARE WAVE
4.0
4.0 dc 3.0
2.0
2.0 SQUARE WAVE
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

MUR860
100 1000
70 TJ = 150°C

100
50
TJ = 150°C 10
30 100°C
20 1.0
100°C
25°C
25°C 0.1
10
7.0 0.01
100 200 300 400 500 600
grouping. Typical reverse current for lower voltage selections can be
2.0 estimated from these same curves if VR is sufficiently below rated VR.
10

1.0 9.0 RATED VR APPLIED
8.0 dc
0.7
7.0
0.5 6.0
SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 140 150 160 170 180
10 14
RqJA = 16°C/W 13
9.0 dc
RqJA = 60°C/W 12
8.0 (NO HEAT SINK) 11 SQUARE
10 WAVE
7.0
9.0 dc
6.0
SQUARE WAVE 8.0
5.0 7.0
4.0 6.0
dc 5.0
3.0 4.0
2.0 3.0
SQUARE WAVE TJ = 175°C
2.0
1.0
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MUR820, MUR840, MUR860
1.0
D = 0.5
0.5
0.2 0.1
0.1 0.05 ZθJC(t) = r(t) RθJC

0.01 P(pk) RθJC = 1.5 °C/W MAX
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
1000
MUR840, MUR860
MUR820
C, CAPACITANCE (pF)
300 TJ = 25°C
100
30
10
1.0 10 100

MOTOROLA

Energy Capability MUR8100E
MUR8100E is a
. . . designed for use in switching power supplies, inverters and as free Motorola Preferred Device

• Excellent Protection Against Voltage Transients in Switching ULTRAFAST
• Ultrafast 75 Nanosecond Recovery Time 8.0 AMPERES
900–1000 VOLTS
• Low Forward Voltage 4
• Low Leakage Current 1
• High Temperature Glass Passivated Junction 4
• Reverse Voltage to 1000 Volts 3
1
3
• Finish: All External Surfaces Corrosion Resistant and Terminal TO–220AC
10 Seconds
MAXIMUM RATINGS
MUR
Average Rectified Forward Current Total Device, IF(AV) 8.0 Amps
(Rated VR), TC = 150°C
Rev 1

MUR890E MUR8100E
MUR
(iF = 8.0 Amps, TC = 150°C) 1.5
(iF = 8.0 Amps, TC = 25°C) 1.8
(See Test Circuit in Figure 6)

MUR890E MUR8100E
100 10,000
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
70 1000 * estimated from these same curves if VR is sufficiently below rated VR.
IR , REVERSE CURRENT (m A)
50
100 175°C
150°C
30
10
20 100°C
1.0
0.1
10 TJ = 25°C
7.0 TJ = 175°C 0.01

100°C 0 200 400 600 800 1000
5.0 25°C VR, REVERSE VOLTAGE (VOLTS)
3.0 Figure 2. Typical Reverse Current*
2.0
10

1.0
8.0
0.7 7.0 dc
0.5 6.0 SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 140 150 160 170 180

10 14
9.0 RqJA = 16°C/W TJ = 175°C

12
RqJA = 60°C/W
8.0 SQUARE WAVE
(No Heat Sink)
7.0 dc 10
dc
6.0 8.0
5.0 SQUARE WAVE
6.0
4.0
3.0 dc 4.0
2.0
2.0
1.0 SQUARE WAVE
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

MUR890E MUR8100E
+VDD
IL
40 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH ID
IL
DUT
S1
VDD
t0 t1 t2 t
The unclamped inductive switching circuit shown in breakdown (from t1 to t2) minus any losses due to finite com-
Figure 6 was used to demonstrate the controlled avalanche ponent resistances. Assuming the component resistive ele-
capability of the new “E’’ series Ultrafast rectifiers. A mercury ments are small Equation (1) approximates the total energy
switch was used instead of an electronic switch to simulate a transferred to the diode. It can be seen from this equation
noisy environment when the switch was being opened. that if the VDD voltage is low compared to the breakdown
When S1 is closed at t0 the current in the inductor IL ramps voltage of the device, the amount of energy contributed by
up linearly; and energy is stored in the coil. At t1 the switch is the supply during breakdown is small and the total energy
opened and the voltage across the diode under test begins to can be assumed to be nearly equal to the energy stored in
rise rapidly, due to di/dt effects, when this induced voltage the coil during the time when S1 was closed, Equation (2).
reaches the breakdown voltage of the diode, it is clamped at The oscilloscope picture in Figure 8, shows the
BVDUT and the diode begins to conduct the full load current MUR8100E in this test circuit conducting a peak current of
which now starts to decay linearly through the diode, and one ampere at a breakdown voltage of 1300 volts, and using
goes to zero at t2. Equation (2) the energy absorbed by the MUR8100E is
By solving the loop equation at the point in time when S1 is approximately 20 mjoules.
opened; and calculating the energy that is transferred to the Although it is not recommended to design for this condi-
diode it can be shown that the total energy transferred is tion, the new “E’’ series provides added protection against
equal to the energy stored in the inductor plus a finite amount those unforeseen transient viruses that can produce unex-
of energy from the VDD power supply while the diode is in plained random failures in unfriendly environments.
ǒ Ǔ
EQUATION (1): CHANNEL 2:
CH1 500V A 20ms 953 V VERT IL
CH2 50mV
W
AVAL
[ 12 LI 2LPK BV
BV
DUT
–V
0.5 AMPS/DIV.
DUT DD
CHANNEL 1:
VDUT
W
AVAL
[ 12 LI 2LPK
TIME BASE:
20 ms/DIV.
CH1 CH2 REF REF

MUR890E MUR8100E
1.0

0.7 D = 0.5
0.5
0.3
0.2
(NORMALIZED)
0.1 P(pk)
0.1 ZθJC(t) = r(t) RθJC
0.05 RθJC = 1.5°C/W MAX
0.07
D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN
0.01 t1
0.03 t2 READ TIME AT t1
DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t)
0.02 SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
1000
TJ = 25°C
300
C, CAPACITANCE (pF)
100
30
10
1.0 10 100

MOTOROLA
SCANSWITCH Power Rectifier MUR10120E

For High and Very High Resolution Monitors
This state–of–the–art power rectifier is specifically designed for Motorola Preferred Device
use as a damper diode in horizontal deflection circuits for high and
very high resolution monitors. In these applications, the outstand-
ing performance of the MUR10120E is fully realized when paired SCANSWITCH
with either the MJH16206 or MJF16206 monitor specific, 1200 volt RECTIFIER
bipolar power transistor. 10 AMPERES
• 20 mJ Avalanche Energy (Guaranteed)
• 12 Volt (Typical) Peak Transient Overshoot Voltage
4
• 135 ns (Typical) Forward Recovery Time
• Finish: All External Surfaces Corrosion Resistant and Terminal 1 3

CASE 221B–03
• Lead Temperature for Soldering Purposes: 260°C Max. for 3 (TO–220AC)
10 Seconds STYLE 1
• Marking: U10120E
MAXIMUM RATINGS
Rev 1

MUR10120E
(iF = 6.5 Amps, TJ = 125°C) 1.7 2.0
(iF = 6.5 Amps, TJ = 25°C) 1.9 2.2
Maximum Reverse Recovery Time trr 150 175 ns
(IF = 1.0 A, di/dt = 50 Amps/µs)
IF = 6.5 Amps, di/dt = 12 Amps/µs (As Measured on a Deflection Circuit)
100 1000
70
100
IR , REVERSE CURRENT (m A)
125°C
50
10 100°C
30
20 100°C 85°C 1.0 85°C

125°C 25°C 0.1 25°C

10
7.0 0.01
0 200 400 600 800 1000 1200 1400 1600 1800 2000
2.0
10
1.0
8.0
0.7 7.0
0.5 6.0
5.0
0.3 4.0 dc
3.0
0.2
2.0 SQUARE WAVE
1.0
0.1 0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 105 110 115 120 125

MUR10120E

10 15
9.0 RqJA = 16°C/W TJ = 125°C
8.0 12
7.0 SQUARE WAVE
6.0 9.0 dc
5.0
4.0 6.0
3.0
2.0 3.0
1.0
0 0
0 15 30 45 60 75 90 105 120 135 150 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
500
TJ = 25°C
TYPICAL CAPACITANCE
400 AT 0 V = 500 pF
C, CAPACITANCE (pF)
300
200
100
0
1.0 10 100

MOTOROLA
 Data Sheet
Designer's
SCANSWITCH Power Rectifier MUR10150E

For Use As A Damper Diode Motorola Preferred Device
In High and Very High Resolution Monitors

The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH
damper diode in horizontal deflection circuits for high and very high resolution monitors. In these RECTIFIER
applications, the outstanding performance of the MUR10150E is fully realized when paired with 10 AMPERES
either the MJW16212 or MJF16212 monitor specific, 1500 V bipolar power transistor. 1500 VOLTS
• 1500 V Blocking Voltage
• 20 mJ Avalanche Energy Guaranteed
• Peak Transient Overshoot Voltage Specified, 14 Volts (typical)
• Forward Recovery Time Specified, 135 ns (typical) 4
1
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 CASE 221B–03
Seconds 3 (TO–220AC)
• Marking: U10150E
MAXIMUM RATINGS
Average Rectified Forward Current, (Rated VR), TC = 125°C IF(AV) 10 Amps
(iF = 6.5 Amps, TJ = 125°C) 1.7 2.2
(iF = 6.5 Amps, TJ = 25°C) 1.9 2.4
Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/µs) trr 150 175 ns
Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/µs) tfr 135 175 ns
Rev 1

MUR10150E
1000
100
IR , REVERSE CURRENT (µ A)
TJ = 125°C
10
100°C
1
20
25°C
0.1
10
0.01
85°C
5
0.001
0 300 600 900 1.2K 1.5K
TJ = 125°C 25°C
2 Figure 2. Typical Reverse Current

40
1 TJ = 125°C
SQUARE
35 WAVE
30
SINE WAVE
0.5
25 (RESISTIVE LOAD)
dc
20
15
0.2
10
0.1 5
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0
vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 5 10 15 20
Figure 1. Typical Forward Voltage
8
(RATED VR APPLIED)
7 RθJC = 2.0°C/W
5
dc
4 SQUARE
WAVE
3
0
85 95 105 115 125
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating Case

MUR10150E
500
TYPICAL CAPACITANCE AT
0 V = 430 pF
400
C, CAPACITANCE (pF)
300
200
100
0
0.1 0.2 0.5 1 2 5 10 20 50 100
300 1K
Q rr , STORED RECOVERY CHARGE (nC)
270 VR = 30 V VR = 30 V
Trr, REVERSE RECOVERY TIME (ns)
900
240 800
210 700
di/dt = 100 A/µs
180 di/dt = 50 A/µs
600
= 50 A/µs
150 500
100 A/µs
120 400
90 300
60 200
30 100
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS)
Figure 6. Typical Reverse Recovery Time Figure 7. Typical Stored Recovery Charge

MOTOROLA

. . . designed for use in switching power supplies, inverters and as MUR1540
following features: MUR1560
• Ultrafast 35 and 60 Nanosecond Recovery Time Motorola Preferred Devices

• High Voltage Capability to 600 Volts ULTRAFAST
• Low Forward Drop RECTIFIERS
15 AMPERES
200–400–600 VOLTS
• Current Derating Specified @ Both Case and Ambient
Temperatures
10 Seconds 3
CASE 221B–03
• Marking: U1520, U1540, U1560 TO–220AC
PLASTIC
MAXIMUM RATINGS
MUR
Average Rectified Forward Current IF(AV) 15 15 Amps
(Rated VR) @ TC = 150°C @ TC = 145°C
Peak Rectified Forward Current IFRM 30 30 Amps
(Rated VR, Square Wave, 20 kHz) @ TC = 150°C @ TC = 145°C
Nonrepetitive Peak Surge Current (Surge applied at rated IFSM 200 150 Amps
load conditions halfwave, single phase, 60 Hz)
(iF = 15 Amps, TC = 150°C) 0.85 1.12 1.20
(iF = 15 Amps, TC = 25°C) 1.05 1.25 1.50
(Rated dc Voltage, TC = 150°C) 500 500 1000
(Rated dc Voltage, TC = 25°C) 10 10 10
Rev 1

MUR1520 MUR1540 MUR1560
MUR1520
100 100
TJ = 150°C 50 TJ = 150°C
70 100°C

20
25°C 100°C
10
50
5
2
30
1
20 0.5
25°C
0.2
0.1
10 0.05
0.02
7.0 0.01
0 20 40 60 80 100 120 140 160 180 200
3.0
2.0

16
1.0 14
dc
0.7 12
10
0.5 Square Wave
8.0
0.3 6.0
0.2 4.0
Rated Voltage Applied
2.0
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180
14 16
I
14 (Resistive Load) PK = π
12 IAV
dc
IPK =5.0
12 (Capacitive Load)
10 RqJA = 16°C/W As Obtained IAV
From A Small TO–220 dc
Square Wave 10
8.0 Heat Sink 10
8.0 20
6.0
6.0 Square Wave
dc
4.0
Square Wave 4.0
TJ = 125°C
2.0 RqJA = 60°C/W 2.0
As Obtained in Free Air, No Heat Sink
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2.0 4.0 6.0 8.0 10 12 14 16

MUR1520 MUR1540 MUR1560
MUR1540
100 100
50 TJ = 150°C
70

20 100°C
10
50
5 25°C
100°C
TJ = 150°C 2
25°C
30 1
0.5
20
0.2
0.1
10 0.05
0.02
7.0 0.01
0 50 100 150 200 250 300 350 400 450 500
3.0
2.0

16
1.0 14
dc
0.7 12
10
0.5 Square Wave
8.0
0.3 6.0
0.2 4.0
2.0
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180
14 16
(Resistive Load) IPK

=π
12 14 IAV
I
(Capacitive Load) PK =5.0 dc
IAV
dc 12
10 RqJA = 16°C/W As Obtained
10
From A Small TO–220 10
8.0 Square Wave Heat Sink 20 Square Wave
8.0
6.0
6.0
TJ = 125°C
4.0 dc
4.0
Square Wave
2.0 RqJA = 60°C/W 2.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2.0 4.0 6.0 8.0 10 12 14 16


MUR1520 MUR1540 MUR1560
MUR1560
100 200
100
70 50 TJ = 150°C

20
50
10
TJ = 150°C 100°C
5
30
2
100°C 1
20
0.5 25°C
25°C
0.2
0.1
10
0.05
7.0 0.02
150 200 250 300 350 400 450 500 550 600 650
3.0
2.0

16
1.0 14 dc
0.7 12
Square Wave
10
0.5
8.0
0.3 6.0
0.2 4.0
2.0
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180
10 16
I dc
9.0
dc (Capacitive Load) PK =5.0
14 IAV
8.0 RqJA = 16°C/W As Obtained
12 10
Square Wave
7.0 From A Small TO–220
Heat Sink 10 20 Square Wave
6.0
5.0 8.0
4.0 dc I
6.0 (Resistive–Inductive Load) PK = π
IAV
3.0
Square Wave 4.0
2.0 TJ = 125°C
RqJA = 60°C/W
1.0 2.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2.0 4.0 6.0 8.0 10 12 14 16


MUR1520 MUR1540 MUR1560
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MUR1520, MUR1540, MUR1560
1.0
D = 0.5
0.5
0.2 0.1
0.1 0.05 ZθJC(t) = r(t) RθJC

0.01 P(pk) RθJC = 1.5°C/W MAX
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
1000
500 TJ = 25°C
C, CAPACITANCE (pF)
200
100
50
20
10
1.0 2.0 5.0 10 20 50 100

MOTOROLA
Advance Information
SWITCHMODE MURF820
Power Rectifier Motorola Preferred Device
• Ultrafast 35 ns Recovery Times ULTRAFAST RECTIFIER
8 AMPERES
200 VOLTS
• UL Recognized File #E69369(1)
1
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are 3
Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds CASE 221E–01
ISOLATED TO–220
• Marking: U820
MAXIMUM RATINGS
(Rated VR), TC = 150°C
RMS Isolation Voltage (t = 1 second, R.H. ≤ 30%, TA = 25°C) (2) Per Figure 3 Viso1 4500 Volts
Per Figure 4 (1) Viso2 3500
Purposes: 1/8″ from Case for 5 seconds
Rev 1

MURF820
(iF = 8.0 Amp, TC = 150°C) 0.895
(iF = 8.0 Amp, TC = 25°C) 0.975


(IF = 1.0 Amp, di/dt = 50 Amp/µs) 35
100 10 K
50
1.0 K
20 I R, REVERSE CURRENT ( µ A) 400
10 100
40
5.0
10
2.0
TJ = 25°C 2.0 TJ = 100°C
1.0 100°C 1.0
0.4
25°C
0.3 0.1
0.04
0.1 0.01
0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 180 200
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Leakage Current*

MURF820

0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
Advance Information
SWITCHMODE MURF1620CT
• UL Recognized File #E69369 (1)
2 1
3
Leads are Readily Solderable CASE 221D–02
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 ISOLATED TO–220
Seconds
• Marking: U1620


Purposes: 1/8″ from the Case for 5 seconds
Rev 1

MURF1620CT
(iF = 8.0 Amp, TC = 150°C) 0.895
(iF = 8.0 Amp, TC = 25°C) 0.975
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 35
10 K
100
50
1.0 K
20 400
10 100
40
5.0
10
2.0 TJ = 100°C TJ = 100°C
2.0
1.0 25°C 1.0
0.4 25°C
0.3 0.1
0.04
0.1 0.01
0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 180 200

MURF1620CT

0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
Advance Information
SWITCHMODE MURF1660CT
• UL Recognized File #E69369 (1)
2 1
3
Leads are Readily Solderable CASE 221D–02
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 ISOLATED TO–220
Seconds
• Marking: U1660

Average Rectified Forward Current Per Diode IF(AV) 8 Amps
Total Device, (Rated VR), TC = 150°C Per Device 16

Rev 1

MURF1660CT
(iF = 8.0 Amp, TC = 150°C) 1.20
(iF = 8.0 Amp, TC = 25°C) 1.50
(IF = 1.0 Amp, di/dt = 50 Amp/µs) 60
100 10 K
50 TJ = 150°C
1.0 K
20
100°C
25°C 100
10
TJ = 150°C
5
10
100°C
2
1 1.0
0.5 25°C
0.1
0.2
0.1 0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 200 300 400 500 600

MURF1660CT

0.107″ MIN 0.107″ MIN
LEADS LEADS LEADS
0.110″ MIN
4–40 SCREW CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT HEATSINK


MOTOROLA
SWITCHMODE Power Rectifiers MUR3020WT

. . . designed for use in switching power supplies, inverters and as free MUR3040WT
• Ultrafast 35 and 60 Nanosecond Recovery Time
MUR3060WT
• Low Forward Drop ULTRAFAST RECTIFIERS
• Low Leakage Specified @ 150°C Case Temperature 30 AMPERES
• Current Derating Specified @ Both Case and Ambient 200–400–600 VOLTS
Temperatures
1
2, 4 1
3 3
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 CASE 340K–01
Seconds TO–247AE
• Marking: U3020, U3040, U3060

Rating Symbol MUR3020WT MUR3040WT MUR3060WT Unit
Average Rectified Forward Current @ 145°C IF(AV) 15 Amps
Total Device 30
Peak Repetitive Surge Current IFM 30 Amps


(IF = 15 Amp, TC = 150°C) 0.85 1.12 1.4
(IF = 15 Amp, TC = 25°C) 1.05 1.25 1.7
(Rated DC Voltage, TJ = 150°C) 500 1000
(iF = 1.0 A, di/dt = 50 Amps/µs)
Rev 2

MUR3020WT MUR3040WT MUR3060WT
100 100 TJ = 150°C
TJ = 150°C 100°C 50
20 100°C
25°C
50 10
5
30 2
1
20 0.5 25°C
0.2
0.1
10 0.05
0.02
0.01
60 0
80 100 120 140 160 180 200 20 40
5
*The curves shown are typical for the highest voltage device in the voltage grouping.
3 Typical reverse current for lower voltage selections can be estimated from these same
2
Figure 2. Typical Reverse Current (Per Leg)*

16
1
14
dc
12
0.5
10
SQUARE WAVE
0.3
8
0.2 6
4
0.1 2
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
140 150 160 170 180
Figure 1. Typical Forward Voltage (Per Leg) TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating, Case (Per Leg)

14
P F(AV) , AVERAGE POWER DISSIPATION (WATTS)
16
(RESISTIVE LOAD) PK = π
dc I
12 14 IAV
RθJA = 15°C/W AS OBTAINED
12 I
10 USING A SMALL FINNED (CAPACITIVE LOAD) PK = 5
IAV dc
HEAT SINK.
SQUARE WAVE 10
8 10
8
dc 20
6
6
4 SQUARE WAVE
SQUARE WAVE 4
TJ = 125°C
2 RθJA = 40°C/W
AS OBTAINED IN FREE AIR 2
WITH NO HEAT SINK.
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

100 100 TJ = 150°C
50
20
50 100°C
10
100°C 25°C
TJ = 150°C 25°C 5
30
2
1
20
0.5
0.2
10 0.1
0.05
0.02
5 0.01
0 50 100 150 200 250 300 350 400 450 500
3 *The curves shown are typical for the highest voltage device in the voltage grouping.
Typical reverse current for lower voltage selections can be estimated from these same
2
1

16
14
0.5
dc
12
0.3
10
SQUARE WAVE
0.2 8
6
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 4
vF, INSTANTANEOUS VOLTAGE (VOLTS) RATED VOLTAGE APPLIED
2
Figure 6. Typical Forward Voltage (Per Leg)
0
140 150 160 170 180
TC, CASE TEMPERATURE (°C)

14
16
(RESISTIVE–INDUCTIVE LOAD) PK = π
I
dc
14 IAV
12 I
RθJA = 15°C/W AS OBTAINED (CAPACITIVE LOAD) PK = 5 dc
12 IAV
10 USING A SMALL FINNED
10
HEAT SINK.
SQUARE WAVE 10
8
20 SQUARE WAVE
8
6 dc
6
4
SQUARE WAVE 4
TJ = 125°C
2 RθJA = 40°C/W
WITH NO HEAT SINK.
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

100 200
100
50 TJ = 150°C
50 20
10
TJ = 150°C 100°C
5
30
2
100°C
20 1
0.5 25°C
25°C
0.2
10 0.1
0.05
0.02
150 200 250 300 350 400 450 500 550 600 650
5
*The curves shown are typical for the highest voltage device in the voltage grouping.
3 Typical reverse current for lower voltage selections can be estimated from these same
2
16

1
14
dc
12
0.5 SQUARE WAVE
10
0.3 8
0.2 6
4
0.1 2
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
140 150 160 170 180
Figure 11. Typical Forward Voltage (Per Leg) TC, CASE TEMPERATURE (°C)

10
16
dc I dc
RθJA = 16°C/W AS OBTAINED (CAPACITIVE LOAD) PK = 5
9 IAV
FROM A SMALL TO–220 14
8 HEAT SINK. 10
12
7 SQUARE WAVE
6 10
20 SQUARE WAVE
5 8
4 dc (RESISTIVE–INDUCTIVE LOAD)
6
3 IPK = π
SQUARE WAVE 4 IAV
2 TJ = 125°C
RθJA = 60°C/W
1 AS OBTAINED IN FREE AIR 2
0 WITH NO HEAT SINK. 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1
D = 0.5
0.5
0.2 0.1
0.1 0.05 P(pk) RθJC = 1.5°C/W MAX
0.05 t1
PULSE TRAIN SHOWN
t2 READ TIME AT T1
SINGLE PULSE TJ(pk) – TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1K
t, TIME (ms)
1K
500 TJ = 25°C
C, CAPACITANCE (pF)
200
100
50
20
10
1 2 5 10 20 50 100

MOTOROLA
SWITCHMODE Power Rectifiers MUR3020PT

. . . designed for use in switching power supplies, inverters and as free MUR3040PT *
MUR3060PT *
• Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices
• Low Forward Drop ULTRAFAST RECTIFIERS
• Low Leakage Specified @ 150°C Case Temperature 30 AMPERES
• Current Derating Specified @ Both Case and Ambient Temperatures 200–400–600 VOLTS
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable 1
• Lead Temperature for Soldering Purposes: 260°C Max. 2, 4
for 10 Seconds 1
• Shipped 30 units per plastic tube 3 2
• Marking: U3020, U3040, U3060 3
CASE 340D–02, Style 2
TO–218AC

Rating Symbol MUR3020PT MUR3040PT MUR3060PT Unit
Average Rectified Forward Current (Rated VR) IF(AV) Amps
Per Leg 15 @ TC = 150°C 15 @ TC =
Per Device 30 @ TC = 150°C 30 145°C
Peak Rectified Forward Current, Per Leg IFRM 30 30 Amps
(Rated VR, Square Wave, 20 kHz, TC = 150°C) @ TC = 150°C @ TC =145°C
halfwave, single phase, 60 Hz) Per Leg
(IF = 15 Amp, TC = 150°C) 0.85 1.12 1.2
(IF = 15 Amp, TC = 25°C) 1.05 1.25 1.5
(iF = 1.0 Amp, di/dt = 50 Amps/µs)
Rev 4

MUR3020PT MUR3040PT MUR3060PT
100 100 TJ = 150°C
TJ = 150°C 100°C 50
20 100°C
25°C
50 10
5
30 2
1
20 0.5 25°C
0.2
0.1
10 0.05
0.02
0.01
0 20 40 60 80 100 120 140 160 180 200
5
3 Figure 2. Typical Reverse Current (Per Leg)

16
14
1
dc
12
10
0.5 SQUARE WAVE
8
0.3 6
0.2 4
2
0.1 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 140 150 160 170 180
14
16
(RESISTIVE LOAD) PK = π
dc I
12 14 IAV
RθJA = 15°C/W AS OBTAINED
12 I
10 USING A SMALL FINNED (CAPACITIVE LOAD) PK = 5
IAV dc
HEAT SINK.
SQUARE WAVE 10
8 10
8
dc 20
6
6
4 SQUARE WAVE
SQUARE WAVE 4
TJ = 125°C
2 RθJA = 40°C/W
WITH NO HEAT SINK.
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

100 100 TJ = 150°C
50
20
50 100°C
10
100°C 25°C
TJ = 150°C 25°C 5
30
2
1
20
0.5
0.2
10 0.1
0.05
0.02
5 0.01
0 50 100 150 200 250 300 350 400 450 500
3
2

16
14
1 dc
12
10
SQUARE WAVE
0.5
8
0.3 6
0.2 4
2
0.1 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 140 150 160 170 180
14
16
(RESISTIVE–INDUCTIVE LOAD) PK = π
I
dc
14 IAV
12 I
RθJA = 15°C/W AS OBTAINED (CAPACITIVE LOAD) PK = 5 dc
12 IAV
10 USING A SMALL FINNED
10
HEAT SINK.
SQUARE WAVE 10
8
20 SQUARE WAVE
8
6 dc
6
4
SQUARE WAVE 4
TJ = 125°C
2 RθJA = 40°C/W
WITH NO HEAT SINK.
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16

100 200
100
50 TJ = 150°C
50 20
10
TJ = 150°C 100°C
5
30
2
100°C
20 1
0.5 25°C
25°C
0.2
10 0.1
0.05
0.02
150 200 250 300 350 400 450 500 550 600 650
5
3 Figure 12. Typical Reverse Current (Per Leg)
2
16

14
1 dc
12
SQUARE WAVE
10
0.5
8
0.3
6
0.2 4
2
0.1 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 140 150 160 170 180
10
16
dc I dc
RθJA = 16°C/W AS OBTAINED (CAPACITIVE LOAD) PK = 5
9 IAV
FROM A SMALL TO–220 14
8 HEAT SINK. 10
12
7 SQUARE WAVE
6 10
20 SQUARE WAVE
5 8
4 dc (RESISTIVE–INDUCTIVE LOAD)
6
3 IPK = π
SQUARE WAVE 4 IAV
2 TJ = 125°C
RθJA = 60°C/W
1 AS OBTAINED IN FREE AIR 2
0 WITH NO HEAT SINK. 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16


1
D = 0.5
0.5
0.2 0.1
0.1 0.05 P(pk) RθJC = 1.5°C/W MAX
0.05 t1
PULSE TRAIN SHOWN
t2 READ TIME AT T1
SINGLE PULSE TJ(pk) – TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1K
t, TIME (ms)
1K
500 TJ = 25°C
C, CAPACITANCE (pF)
200
100
50
20
10
1 2 5 10 20 50 100

MOTOROLA
SWITCHMODE Power Rectifier MUR3040

• High Voltage Capability to 400 Volts ULTRAFAST RECTIFIERS
30 AMPERES
400 VOLTS
Readily Solderable
• Marking: U3040
1 1
4
3
3
CASE 340E–02, STYLE 1
MAXIMUM RATINGS
TC = 70°C
@ IF = 30 Amps, TC = 100°C 1.4
@ IF = 30 Amps, TC = 25°C 1.5
Instantaneous Reverse Current (1) IR
@ Rated dc Voltage, TC = 100°C 6.0 mA
@ Rated dc Voltage, TC = 25°C 35 µA
Reverse Recovery Time tRR 100 ns
IF = 1.0 Amp, dI/dt = 15 Amp/µs
Rev 3

MUR3040
100 1000
100°C
150°C
TJ = 150°C
i F, FORWARD CURRENT (AMPS)
I R, REVERSE CURRENT (µ AMPS)

25°C 100
10 100°C
10
25°C
1
1
0.1
0.1 0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 50 100 150 200 250 300 350 400
VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (VOLTS)
35 4
30

3
25
20
dc 2
15
dc
10
1
5 IN FREE AIR
WITH NO HEATSINK
0 0
140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
Advance Information MUR3080


• Ultrafast 75 ns (Typ) Soft Recovery Time
ULTRAFAST RECTIFIERS
30 AMPERES
600 – 800 VOLTS
1
Seconds 4
• Shipped 30 Units Per Plastic Tube 3
• Marking: U3080 1
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (TYPICAL DATA)
@ IF = 30 Amps, TC = 25°C 1.9
@ IF = 30 Amps, TC = 100°C 1.8
@ Rated DC Voltage, TC = 25°C 100 µA
@ Rated DC Voltage, TC = 100°C 5.0 mA
IF = 1.0 Amp, VR = 30 V, dI/dt = 50 A/µs
Rev 2

MOTOROLA
SWITCHMODE Power Rectifier MUR6040

• High Voltage Capability to 400 Volts ULTRAFAST RECTIFIERS
• Low Forward Voltage Drop 60 AMPERES
• High Temperature Glass Passivated Junction 400 VOLTS
4
Readily Solderable
• Marking: U6040
1 1
4
3
3
MAXIMUM RATINGS
TC = 70°C
@ IF = 60 Amps, TC = 100°C 1.4
@ IF = 60 Amps, TC = 25°C 1.5
@ Rated dc Voltage, TC = 100°C 10 mA
@ Rated dc Voltage, TC = 25°C 60 µA
IF = 1.0 Amp, dI/dt = 15 Amp/µs
Rev 3

MUR6040
100 1000
100°C
150°C TJ = 150°C
I R, REVERSE CURRENT (µ AMPS)

25°C
100
10 100°C
10
25°C
1
1
0.1
0.1 0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 50 100 150 200 250 300 350 400
VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (VOLTS)
80 5
70

4
60
50 3
40
dc
30 2
dc
20
1 IN FREE AIR
10 WITH NO HEATSINK
0 00
120 140 160 175 20 40 60 80 100 120 140 160 180 200

MOTOROLA Order this document
SEMICONDUCTOR TECHNICAL DATA by BYT230PIV–400M/D
Ultrafast Power Rectifiers

BYT230PIV-400M
Dual high voltage rectifiers ranging from 200 V to 400 V suited for Switch
Mode Power Supplies and other power converters.
• Very Low Reverse Recovery Time
• Very Low Switching Losses ULTRAFAST
• Low Noise Turn–Off Switching RECTIFIERS
• Insulated Package: 60 AMPS
Insulating voltage = 2500 VRMS 400 VOLTS
Capacitance = 45 pF
4
1 3
• Weight: 28 g (approximately)
• Finish: All External Surfaces Corrosion Resistant 1 4 2

• Marking: BYT230PIV–400M 2 3
SOT–227B
MAXIMUM RATINGS
Average Rectified Current Per Device IF(AV) 60 A
Peak Repetitive Forward Current, Per Diode IFRM 500 A
tp < 10 µs
Per Device RθJC 0.8
Coupling RθC 0.1

Instantaneous Forward Voltage (1) VF V
IF = 30 A, TC = 25°C 1.5
IF = 30 A, TC = 100°C 1.4
VR = 400 V, TC = 25°C 35 µA
VR = 400 V, TC = 100°C 6 mA
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%.
Rev 1

 Motorola, Inc. 1996
BYT230PIV-400M
RECOVERY CHARACTERISTICS
Test Conditions Symbol Typ Max Unit
IF = 1 A, VR = 30 V, dIF/dt = –15 A/µs trr — 100 ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A — 50
TURN–OFF SWITCHING CHARACTERISTICS (without series inductance)

VCC = 200 V, IF = 30 A, TJ = 100°C, Lp < 0.05 µH (See Figure 11) tIRM ns
dIF/dt = – 120 A/µs — 75
dIF/dt = – 240 A/µs 50 —
dIF/dt = – 120 A/µs IRM — 9 A
dIF/dt = – 240 A/µs 12 —
TURN–OFF OVERVOLTAGE COEFFICIENT (with series inductance)

TJ = 100°C, VCC = 60 V, IF = IF(AV)
dIF/dt = – 30 A/µs, Lp = 1 µH (See Figure 12)
C + VVCC
RP 3.3 —

BYT230PIV-400M
60
ÉÉ
ÉÉ
55 T
δ = 0.5 160
δ = 0.2
ÉÉ
ÉÉ
50
50 W IM
45
δ = 0.1 δ=1 δ = tp/T tp
40 120
PF(AV) (W)
40 W
I M (A)
35
30 δ = 0.05
60 30 W
ÉÉÉ
25
20 T
15
ÉÉÉ 40
ÉÉÉ
10 20 W
5 δ = tp/T tp
0 0
0 5 10 15 20 25 30 35 0 0.2 0.4 0.6 0.8 1
IF(AV) (A) δ
Figure 1. Low Frequency Power Losses Figure 2. Peak Current versus Form Factor
versus Average Current
ÉÉ
ÉÉÉÉ
ÉÉ
120 1
ÉÉ
ÉÉÉÉ
ÉÉ
Z (t = δ)
IM K= θ p
100 Rθ
0.8
TP
80
TJ = 100°C 0.6 δ = 0.5
I M (A)
Vreapplied < 0.5 VRRM

K
60
δ = 0.5
ÉÉÉ
0.4
40 δ = 0.2 T
20
0.2 δ = 0.1
MONOPULSE (δ = 0, T – ∞)
ÉÉÉ
δ = tp/T tp
0 0
0.01 .02 .04 .06 .08 0.1 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1
tp (s) tp (s)
Figure 3. Non–Repetitive Peak Surge Current Figure 4. Relative Variation of Thermal Impedance
versus Overload Duration Junction to Case versus Pulse Duration
2.5 1000
90% CONFIDENCE
TJ = 100°C 800 TJ = 100°C
2 MAXIMUM (90% CONFIDENCE)
TJ = 25°C
600
Q RR ( µC)
V F (V)
1.5
TJ = 100°C
400
1 TYP 200
0 0
0 20 40 60 80 100 120 10 20 40 60 80 100 200 400 600 800 1000
IF (A) dIF/dt (A/µs)
Figure 5. Voltage Drop versus Forward Current Figure 6. Recovery Charge versus dIF/dt

BYT230PIV-400M
2 50
IF = IF(AV) TJ = 100°C
TJ = 100°C 40
1.5 90% CONFIDENCE
30
t fr ( µs)
I RM (A)
1
20 MAXIMUM (90% CONFIDENCE)
TYP
0.5
10
0 0
0 100 200 300 400 500 10 20 40 60 80 100 200 400 600 1000
dIF/dt (A/µs) dIF/dt (A/µs)
Figure 7. Recovery Time versus dIF/dt Figure 8. Peak Reverse Current versus dIF/dt
25 1.6
TJ = 100°C
1.4 TYP
20 90% CONFIDENCE
1.2
15 1
V FP (V)
0.8
%
IRM
10
0.6
0.4 QRR
5
0.2
0 0
0 100 200 300 400 500 0 50 100 150 200 250
dIF/dt (A/µs) TJ (°C)
Figure 9. Peak Forward Voltage versus dIF/dt Figure 10. Dynamic Parameters versus
Junction Temperature
IF IF
dIF/dt
LC dIF/dt
DUT DUT
LC
VF LP VF
VCC
VCC
IRM VCC
VCC VRP
tIRM
Figure 11. Turn–Off Switching Characteristics Figure 12. Turn–Off Switching Characteristics
(Without series inductance) (With series inductance)

BYT230PIV-400M
PACKAGE DIMENSIONS
A H
B L NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
R 2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS INCHES
Q DIM MIN MAX MIN MAX
A 31.50 31.70 1.240 1.248
G B 7.80 8.20 0.307 0.322
4 3 C 4.10 4.30 0.161 0.169
M N D 14.90 15.10 0.586 0.590
1 2 E 30.10 30.30 1.185 1.193
F 38.00 38.20 1.496 1.503
G 4.00 0.157
H 11.80 12.20 0.464 0.480
L 8.90 9.10 0.350 0.358
M 12.60 12.80 0.496 0.503
D P N 25.20 25.40 0.992 1.000
P 1.95 2.05 0.076 0.080
E S Q 4.10 0.157
R 0.75 0.85 0.030 0.033
F S 5.50 0.217
Recommended screw torque: 1.3 " 0.2 Nm

Maximum screw torque: 1.5 Nm
SOT–227B

BYT230PIV-400M
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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6 ◊ BYT230PIV–400M/D
Rectifier Device Data
MOTOROLA

Dual high voltage rectifiers suited for Switchmode Power
BYT230PIV-1000M
Supplies and other power converters.
• Very Low Switching Losses
ULTRAFAST
• Low Noise Turn–Off Switching
RECTIFIERS
• Insulated Package: 60 AMPS
Insulating voltage = 2500 VRMS
Capacitance = 45 pF 1000 VOLTS
• Case: Molded epoxy with isolated metal base 4
• Weight: 28 g (approximately) 1 3
• Finish: All External Surfaces Corrosion Resistant 1 4
2
SOT–227B
MAXIMUM RATINGS
tp < 10 µs
Coupling RθC 0.1

IF = 30 A, TC = 25°C 1.9
IF = 30 A, TC = 100°C 1.8
VR = 1000 V, TC = 25°C 100 µA
VR = 1000 V, TC = 100°C 5 mA
(1) Pulse Test: Pulse Width = 380 µs, Duty Cycle ≤ 2%
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%
Rev 1

BYT230PIV-1000M
IF = 0.5 A, IR = 1 A, Irr = 0.25 A — 70

dIF/dt = – 120 A/µs — 200
dIF/dt = – 240 A/µs 120 —
dIF/dt = – 120 A/µs IRM — 19.5 A
dIF/dt = – 240 A/µs 22 —

TJ = 100°C, VCC = 200 V, IF = IF(AV)
dIF/dt = – 30 A/µs, Lp = 5 µH (See Figure 12)
C + VVCC
RP — 4.5

BYT230PIV-1000M
70 240
δ = 0.5
ÉÉÉÉ
65 δ = 0.1
60 T
δ = 0.2
ÉÉÉÉ
200
55 δ = 0.05 P = 90 W
δ=1 IM
50
160
45 δ = tp/T
PF(AV) (W)
tp
I M (A)
40
P = 60 W
35 120
ÉÉÉ
30 P = 40 W
25 T 80
ÉÉÉ
20
ÉÉÉ
15
10 40
5 δ = tp/T tp P = 20 W
0 0
0 5 10 15 20 25 30 35 0 0.2 0.4 0.6 0.8 1
IF(AV) (A) δ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
120 1
Z (t = δ)
K= θ p
ÉÉÉ
ÉÉÉÉ
ÉÉ
100 IM Rθ
0.8
TP
80
δ = 0.5 δ = 0.5
I M (A)
0.6
60
K
0.4
δ = 0.2
ÉÉÉ
ÉÉÉ
40 T
ÉÉÉ
Tcase 100°C
0.2 δ = 0.1
20 f > 400 Hz
Vreapplied < 0.8 VRRM δ = tp/T tp
MONOPULSE (δ = 0, T – ∞)
0 0
0.01 0.1 1 0.0001 0.001 0.01 0.1 1
TP (sec) tp (s)
3 3
MAXIMUM (90% CONFIDENCE) 2.5 90% CONFIDENCE

2.5 TJ = 100°C TJ = 100°C
2
2
Q RR ( µC)
V F (V)
1.5
1.5
TYP 1
1 TYP TJ INITIALC
25°CC 0.5
100°C
0.5 0
0 20 40 60 80 100 120 10 20 50 100 200 500 1000

BYT230PIV-1000M
1.5 50
IF = IF(AV) TJ = 100°C
TJ = 100°C 40
90% CONFIDENCE
1
30
t fr ( µs)
I RM (A)
MAXIMUM (90% CONFIDENCE)
20
0.5
TYP
10
0 0
0 100 200 300 400 10 20 50 100 200 500 1000
30 1.5
90% CONFIDENCE
TYP
25 TJ = 100°C
20 1
V FP (V)
IRM
15
%
10 0.5 QRR
0 0
0 100 200 300 400 0 50 100 150
IF
IF
dIF/dt
LC DUT dIF/dt
DUT
VF LC
VCC LP VF
VCC
IRM
VCC VCC
VRP
tIRM

MOTOROLA

BYT261PIV-400M
• Low Noise Turn–Off Switching ULTRAFAST
RECTIFIERS
• Insulated Package:
Insulating voltage = 2500 VRMS 120 AMPS
• Weight: 28 g (approximately)
1 3
2
SOT-227B, STYLE 2
MAXIMUM RATINGS
tp < 10 µs
Coupling RθC 0.1

IF = 60 A, TC = 25°C 1.5
IF = 60 A, TC = 100°C 1.4
VR = 400 V, TC = 25°C 60 µA
VR = 400 V, TC = 100°C 6 mA
Rev 1

BYT261PIV-400M
IF = 0.5 A, IR = 1 A, Irr = 0.25 A — 50

dIF/dt = – 240 A/µs — 75
dIF/dt = – 480 A/µs 50 —
dIF/dt = – 480 A/µs 24 —

TJ = 100°C, VCC = 120 V, IF = IF(AV)
dIF/dt = – 60 A/µs, Lp = 0.8 µH (See Figure 12)
C + VVCC
RP 3.3 4

BYT261PIV-400M
120 400
ÉÉ
ÉÉ
110
δ = 0.1 δ = 0.2 δ = 0.5 T
ÉÉ
ÉÉ
100 100 W
90 IM
300
80 δ=1 75 W
δ = tp/T tp
δ = 0.05
PF(AV) (W)
I M (A)
70
60 200 50 W
ÉÉ
ÉÉ
50
T
40
30
20
10
ÉÉ
ÉÉ
δ = tp/T tp
100
25 W
0 0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 0.2 0.4 0.6 0.8 1
IF(AV) (A) δ
ÉÉ
ÉÉ
ÉÉÉÉ
É
250 1
ÉÉ
ÉÉ
ÉÉÉÉ
É
IM
δ = 0.5
200 TP
K = Zθ JC /R θ JC
Tcase = 100°C δ = 0.2
I M (A)
150 VC APPLIED < 0.5 VRRM

δ = 0.5
ÉÉÉ
100 T
δ = 0.1
50 SINGLE PULSE
δ = tp/T
ÉÉÉ tp
0 0.1
.01 .02 .04 .06 .08 0.1 0.2 0.4 0.6 1 0.001 0.01 0.1 1 10
tp (s) t (s)
2.5 2.5
TJ = 100°C
90% CONFIDENCE
TJ = 100°C
2
2
MAX (90% CONFIDENCE)
1.5
Q RR ( µC)
V F (V)
1.5 TJ = 25°C
1
TJ = 100°C
1
0.5
0.5 0
0 50 100 150 200 250 10 20 40 60 80 100 200 600 1000

BYT261PIV-400M
2 50
IF ID TJ = 100°C
TJ = 100°C
40
1.5 90% CONFIDENCE
30
t fr ( µs)
I RM (A)
1
MAX (90% CONFIDENCE)
20
TYP
0.5
10
0 0
0 100 200 300 400 500 10 20 40 60 80 100 200 400 600 1000
25 1.6
TJ = 100°C TYP
90% CONFIDENCE 1.4
20
1.2
15 1
V FP (V)
0.8
%
IRM
10
0.6
QRR
0.4
5
0.2
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250
IF
IF
dIF/dt
LC DUT dIF/dt
DUT
VF LC
VCC LP VF
VCC
IRM
VCC VCC
VRP
tIRM

MOTOROLA

BYT261PIV-1000M
• Low Noise Turn–Off Switching ULTRAFAST
RECTIFIERS
• Insulated Package:
Insulating voltage = 2500 VRMS 120 AMPS
• Weight: 28 g (approximately) 1 3
2
SOT–227B, STYLE 2
MAXIMUM RATINGS
tp < 10 µs
Coupling RθC 0.1

IF = 60 A, TC = 25°C 1.9
IF = 60 A, TC = 100°C 1.8
VR = 1000 V, TC = 25°C 100 µA
VR = 1000 V, TC = 100°C 6 mA
Rev 1

BYT261PIV-1000M
IF = 0.5 A, IR = 1 A, Irr = 0.25 A — 70

dIF/dt = – 240 A/µs — 200
dIF/dt = – 480 A/µs 120 —
dIF/dt = – 480 A/µs 44 —

TJ = 100°C, VCC = 200 V, IF = IF(AV)
dIF/dt = – 60 A/µs, Lp = 2.5 µH (See Figure 12)
C + VVCC
RP 3.3 4.5

BYT261PIV-1000M
130 500
ÉÉÉÉ
120 δ = 0.05 450
δ=1 T
ÉÉÉÉ
110
100 400
δ = 0.5
ÉÉÉÉ
δ = 0.1 P = 100 W IM
90 350
80 δ = tp/T tp
PF(AV)
δ = 0.2
I M (A)
300
70 P = 70 W
60 250
P = 40 W
ÉÉ
ÉÉ
50 T 200
P = 20 W
ÉÉ
ÉÉ
40 150
30
100
20
10 δ = tp/T tp 50
0 0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IF(AV) (A) δ
350 1
δ = 0.5
300 δ = 0.5
250
K = Z θ JC /R θJC δ = 0.2
I M (A)
ÉÉ
ÉÉ
ÉÉÉ
200 TC = 25°C
ÉÉ
ÉÉ
ÉÉÉ ÉÉÉÉ
150
δ = 0.1 T
ÉÉ
ÉÉ
ÉÉÉ ÉÉÉÉ
IM TC = 60°C
100
SINGLE PULSE
50
0
t
δ = 0.5
0.1
ÉÉÉÉ
δ = tp/T tp
0.001 0.01 0.1 1 0.001 0.01 0.1 1 10

t (s) t (s)
3 10
MAXIMUM VALUES 90% CONFIDENCE TJ = 100°C
2.5 IF = IF(AV)
2
V FM (V)
Q RR ( µC)
TJ = 25°C
1.5 1
1 TJ = 100°C
0.5
0 0.1
0.1 1 10 100 10 100 500
IFM (A) dIF/dt (A/µs)

BYT261PIV-1000M
1.5 100
90% CONFIDENCE 90% CONFIDENCE TJ = 100°C
1.25 VF = 1.1 VF IF = IF(AV)
IF = IF(AV)
1 TJ = 100°C
TFR ( µs)
I RM (A)
0.75 10
0.5
0.25
0 1
0 50 100 150 200 250 300 350 400 450 500 10 100 500
35 1.5
90% CONFIDENCE TJ = 100°C 1.4
Q RR; I RM [TJ]/O RR; I RM [TJ = 100°C]

30 1.3 TYPICAL VALUES
IF = IF(AV)
1.2
25 1.1
1
20 0.9 IRM
V FP (V)
0.8
0.7
15 QRR
0.6
0.5
10 0.4
0.3
5 0.2
0.1
0 0
0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140
IF
IF
dIF/dt
LC DUT dIF/dt
DUT
VF LC
VCC LP VF
VCC
IRM VCC
VCC
VRP
tIRM

MOTOROLA
Preliminary Data Sheet MURP20020CT

POWERTAP II Ultrafast MURP20040CT
. . . designed for use in switching power supplies, inverters, and as free
wheeling diodes. These state–of–the–art devices have the following features:
• Dual Diode Construction ULTRAFAST
• Low Leakage Current RECTIFIERS
200–400 VOLTS
• Labor Saving POWERTAP Package
• Base Plate Torques: See procedure given in the 1 3
CASE 357C–03
• Marking: UP20020 POWERTAP II
MAXIMUM RATINGS
Rating Symbol MURP20020CT MURP20040CT Unit
Average Rectified Forward Current Per Device IF(AV) 200 (TC = 130°C) 200 (TC = 100°C) Amps
(Rated VR) Per Leg 100 (TC = 130°C) 100 (TC = 100°C)
Peak Repetitive Forward Current, Per Leg IFRM 200 200 Amps
Nonrepetitive Peak Surge Current Per Leg (Surge applied at rated IFSM 800 800 Amps
load conditions halfwave, single phase, 60 Hz)


(iF = 100 Amps, TC = +25°C) 1.00 1.30
(iF = 200 Amps, TC = 25°C) 1.10 1.75
(iF = 100 Amps, TC = 125°C) 0.95 1.15
Instantaneous Reverse Current (1) iR µA
Rev 2

Section 5
Data Sheets

MOTOROLA
Axial Lead 1N4001

Standard Recovery Rectifiers thru
This data sheet provides information on subminiature size, axial lead
mounted rectifiers for general–purpose low–power applications.
1N4007
1N4004 and 1N4007 are
Mechanical Characteristics Motorola Preferred Devices

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are LEAD MOUNTED
Readily Solderable RECTIFIERS
• Lead and Mounting Surface Temperature for Soldering Purposes: 50–1000 VOLTS
220°C Max. for 10 Seconds, 1/16″ from case DIFFUSED JUNCTION
part number
• Marking: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007
CASE 59–03
DO–41
MAXIMUM RATINGS
Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit
*Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
*Non–Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 1000 1200 Volts
(halfwave, single phase, 60 Hz)
*RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 Volts
*Average Rectified Forward Current IO 1.0 Amp
(single phase, resistive load,
60 Hz, see Figure 8, TA = 75°C)
*Non–Repetitive Peak Surge Current IFSM 30 (for 1 cycle) Amp
(surge applied at rated load
conditions, see Figure 2)
Operating and Storage Junction TJ – 65 to +175 °C
Temperature Range Tstg
ELECTRICAL CHARACTERISTICS*
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage Drop vF 0.93 1.1 Volts
(iF = 1.0 Amp, TJ = 25°C) Figure 1
Maximum Full–Cycle Average Forward Voltage Drop VF(AV) — 0.8 Volts
(IO = 1.0 Amp, TL = 75°C, 1 inch leads)
Maximum Reverse Current (rated dc voltage) IR µA
(TJ = 25°C) 0.05 10
(TJ = 100°C) 1.0 50
Maximum Full–Cycle Average Reverse Current IR(AV) — 30 µA
(IO = 1.0 Amp, TL = 75°C, 1 inch leads)
*Indicates JEDEC Registered Data
Rev 5

MOTOROLA
Axial-Lead 1N4933
Fast-Recovery Rectifiers thru
Axial–lead, fast–recovery rectifiers are designed for special applications such
as dc power supplies, inverters, converters, ultrasonic systems, choppers, low
1N4937
RF interference and free wheeling diodes. A complete line of fast recovery 1N4935 and 1N4937 are
rectifiers having typical recovery time of 150 nanoseconds providing high Motorola Preferred Devices
efficiency at frequencies to 250 kHz.
Mechanical Characteristics FAST RECOVERY

• Case: Epoxy, Molded RECTIFIERS
• Weight: 0.4 gram (approximately) 50–600 VOLTS
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are 1.0 AMPERE
Readily Solderable
part number
• Marking: 1N4933, 1N4934, 1N4935, 1N4936, 1N4937
CASE 59–03
DO–41
MAXIMUM RATINGS (1)

Rating Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit
*Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 Volts
*Non–Repetitive Peak Reverse Voltage VRSM 75 150 250 450 650 Volts
RMS Reverse Voltage VR(RMS) 35 70 140 280 420
*Average Rectified Forward Current IO 1.0 Amp
(Single phase, resistive load,
TA = 75°C) (2)
*Non–Repetitive Peak Surge Current IFSM 30 Amps
(Surge applied at rated load
conditions)
Operating Junction Temperature Range TJ – 65 to +150 °C
Storage Temperature Range Tstg – 65 to +150
Thermal Resistance, Junction to Ambient RθJC 65 °C/W
(Typical Printed Circuit Board Mounting)
* Indicates JEDEC Registered Data for 1N4933 Series.
(1) Ratings at 25°C ambient temperature unless otherwise specified.
(2) Derate by 20% for capacitive loads.
Rev 3

1N4933 thru 1N4937
Characteristic Symbol Min Typ Max Unit
Instantaneous Forward Voltage vF — 1.0 1.2 Volts
(IF = 3.14 Amp, TJ = 125°C)
Forward Voltage VF — 1.0 1.1 Volts
(IF = 1.0 Amp, TA = 25°C)
*Reverse Current (Rated dc Voltage) TA = 25°C IR — 1.0 5.0 µA
TA = 100°C — 50 100
*REVERSE RECOVERY CHARACTERISTICS

Reverse Recovery Time trr ns
(IF = 1.0 Amp to VR = 30 Vdc) — 150 200
(IFM = 15 Amp, di/dt = 10 A/µs) — 175 300
Reverse Recovery Current IRM(REC) — 1.0 2.0 Amp
(IF = 1.0 Amp to VR = 30 Vdc)
* Indicates JEDEC Registered Data for 1N4933 Series.

MOTOROLA
Axial-Lead 1N5400
Standard Recovery Rectifiers thru
Lead mounted standard recovery rectifiers are designed for use in power supplies 1N5408
and other applications having need of a device with the following features:
1N5404 and 1N5406 are
• High Current to Small Size Motorola Preferred Devices
• High Surge Current Capability
• Void–Free Economical Plastic Package STANDARD
• Available in Volume Quantities RECOVERY RECTIFIERS
Mechanical Characteristics 50–1000 VOLTS
3.0 AMPERE
Readily Solderable
220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag.
part number
• Marking: 1N5400, 1N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1N5408 CASE 267–03
MAXIMUM RATINGS
Rating Symbol 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Unit
Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Non–repetitive Peak Reverse Voltage VRSM 100 200 300 525 800 1000 1200 Volts
Average Rectified Forward Current IO 3.0 Amp
(Single Phase Resistive Load,
1/2″ Leads, TL = 105°C)
Non–repetitive Peak Surge Current IFSM 200 (one cycle) Amp
(Surge Applied at Rated Load Conditions)
Operating and Storage Junction TJ – 65 to +170 °C
Temperature Range Tstg – 65 to +175
Characteristic Symbol Typ Unit
Thermal Resistance, Junction to Ambient (PC Board Mount, 1/2″ Leads) RθJA 53 °C/W
*Instantaneous Forward Voltage (1) vF — — 1.2 Volts
(iF = 9.4 Amp)
Average Reverse Current (1) IR(AV) — — 500 µA
DC Reverse Current (Rated dc Voltage, TL = 80°C) IR — — 500
* JEDEC Registered Data.
(1) Measured in a single phase halfwave circuit such as shown in Figure 6.25 of EIA RS–282, November 1963. Operated at rated load conditions
TL = 80°C, IO = 3.0 A, Vr = VRWM.
Ratings at 25°C ambient temperature unless otherwise specified.
60 Hz resistive or inductive loads.
For capacitive load, derate current by 20%.
Rev 2

MOTOROLA
Axial Lead Fast Recovery Rectifiers MR850

Axial lead mounted fast recovery power rectifiers are designed for special MR851
MR852
applications such as dc power supplies, inverters, converters, ultrasonic
systems, choppers, low RF interference and free wheeling diodes. A complete
line of fast recovery rectifiers having typical recovery time of 100 nanoseconds
MR854
MR856
providing high efficiency at frequencies to 250 kHz.
• Case: Epoxy, Molded MR852 and MR856 are
• Weight: 1.1 gram (approximately) Motorola Preferred Devices
Readily Solderable
220°C Max. for 10 Seconds, 1/16″ from case FAST RECOVERY
• Shipped in plastic bags, 5,000 per bag. POWER RECTIFIERS
• Available Tape and Reeled, 1500 per reel, by adding a “RL” suffix to the 50–600 VOLTS
part number 3.0 AMPERES
• Marking: R850, R851, R852, R854, R856
CASE 267–03
MAXIMUM RATINGS
Rating Symbol MR850 MR851 MR852 MR854 MR856 Unit
Non–Repetitive Peak Reverse Voltage VRSM 75 150 250 450 650 Volts
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 Volts
Average Rectified Forward Current IO 3.0 Amp
(Single phase resistive load, TA = 80°C)
Non–Repetitive Peak Surge Current IFSM 100 Amp
(surge applied at rated load conditions) (one cycle)
Operating and Storage Junction TJ, – 65 to +125 °C
Temperature Range Tstg – 65 to +150
(Recommended Printed Circuit Board Mounting, See Note 4, Page 5)
Rev 2

MR850 MR851 MR852 MR854 MR856
Forward Voltage VF — 1.04 1.25 Volts
(IF = 3.0 Amp, TJ = 25°C)
Reverse Current (rated dc voltage) TJ = 25°C IR — 2.0 10 µA
MR850 — — 150
MR851 — 60 150
TJ = 80°C MR852 — — 200
MR854 — — 250
MR856 — 100 300
REVERSE RECOVERY CHARACTERISTICS

Reverse Recovery Time trr ns
(IF = 1.0 Amp to VR = 30 Vdc, Figure 9) — 100 200
(IF = 15 Amp, di/dt = 10 A/µs, Figure 10) — 150 300
Reverse Recovery Current IRM(REC) — — 2.0 Amp
(IF = 1.0 Amp to VR = 30 Vdc, Figure 9)

MOTOROLA
Designer's  Data Sheet MR750

High Current Lead Mounted MR751
Rectifiers MR752
MR754
• Current Capacity Comparable to Chassis Mounted Rectifiers
MR756
• Very High Surge Capacity
• Insulated Case MR758
Mechanical Characteristics: MR760
• Case: Epoxy, Molded MR754 and MR760 are
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is HIGH CURRENT
Readily Solderable
LEAD MOUNTED
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds SILICON RECTIFIERS
• Polarity: Cathode Polarity Band 50–1000 VOLTS
• Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units DIFFUSED JUNCTION
per reel by adding a “RL’’ suffix to the part number
• Marking: R750, R751, R752, R754, R758, R760
CASE 194–04
MAXIMUM RATINGS
Characteristic Symbol MR750 MR751 MR752 MR754 MR756 MR758 MR760 Unit
Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Non–Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 960 1200 Volts
(Halfwave, single phase, 60 Hz peak)
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 Volts
Average Rectified Forward Current IO 22 (TL = 60°C, 1/8″ Lead Lengths) Amps
(Single phase, resistive load, 60 Hz) 6.0 (TA = 60°C, P.C. Board mounting)
See Figures 5 and 6
Non–Repetitive Peak Surge Current IFSM Amps
400 (for 1 cycle)
(Surge applied at rated load conditions)
Operating and Storage Junction
Temperature Range
TJ, Tstg
*65 to +175 °C
Characteristic and Conditions Symbol Max Unit
Maximum Instantaneous Forward Voltage Drop vF 1.25 Volts
(iF = 100 Amps, TJ = 25°C)
Maximum Forward Voltage Drop VF 0.90 Volts
(IF = 6.0 Amps, TA = 25°C, 3/8″ leads)
Maximum Reverse Current TJ = 25°C IR 25 µA
(Rated dc Voltage) TJ = 100°C 1.0 mA
Rev 2

MR750 MR751 MR752 MR754 MR756 MR758 MR760
700 600
IFSM , PEAK HALF WAVE CURRENT (AMP)

VRRM MAY BE APPLIED BETWEEN
500 TJ = 25°C EACH CYCLE OF SURGE. THE TJ
400 NOTED IS TJ PRIOR TO SURGE
300 300
MAXIMUM
200 25°C
TYPICAL 200 175°C
25°C
100 TJ = 175°C
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
70
100
50
80
30 60
1.0 2.0 5.0 10 20 50 100
20
NUMBER OF CYCLES AT 60 Hz

10
7.0
5.0 +0.5
3.0 0
COEFFICIENT (mV/° C)
2.0
–0.5 TYPICAL RANGE
1.0
0.7 –1.0
0.5
–1.5
0.3
0.2 –2.0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) iF, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 1. Forward Voltage Figure 3. Forward Voltage Temperature Coefficient
20
R θJL(t) , JUNCTION–TO–LEAD TRANSIENT
THERMAL RESISTANCE ( °C/W)
10 L L 1/2”
3/8”
5.0 1/4”
HEAT SINK 1/8”
3.0
Both leads to heat sink, with lengths as shown. Variations in RqJL(t)
2.0
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about ±20% from the values shown. Values
1.0 for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
0.5 typical or maximum values may be used. For RqJL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
0.3 down to 10 µs at a continuing slope.
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance

MR750 MR751 MR752 MR754 MR756 MR758 MR760

28 7.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS) RESISTIVE INDUCTIVE RθJA = 25°C/W
L = 1/8”
24 LOADS 6.0 SEE NOTE
1/4” RESISTIVE INDUCTIVE LOADS
20 BOTH LEADS TO HEAT 5.0 CAPACITANCE LOADS – 1F & 3F
SINK WITH LENGTHS
3/8” AS SHOWN I(pk) = 5 Iavg
16 4.0
I(pk) = 10 Iavg
I(pk) = 20 Iavg
12 3.0
5/8”
RθJA = 40°C/W
8.0 2.0 f = 60 Hz
SEE NOTE
4.0 1.0 6F (IPK/IAVE = 6.28)
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 5. Maximum Current Ratings Figure 6. Maximum Current Ratings
NOTES
32 THERMAL CIRCUIT MODEL
CAPACITANCE LOADS (For Heat Conduction Through The Leads)
PF(AV) , POWER DISSIPATION (WATTS)
6F
28 I(pk) = 5 Iavg
24 10 Iavg 1F & 3F TA(A) TA(K)
PF
20 20 Iavg
16
12
Use of the above model permits junction to lead thermal resistance for
8.0 RESISTIVE – INDUCTIVE LOADS any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
4.0 shown below. Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
0 TL = Lead Temperature TJ = Junction Temperature
0 4.0 8.0 12 16 20 24 28 32
RqS = Thermal Resistance, Heat Sink to Ambient
IF(AV), AVERAGE FORWARD CURRENT (AMPS) RqL = Thermal Resistance, Lead to Heat Sink
RqJ = Thermal Resistance, Junction to Case
Figure 7. Power Dissipation PF = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
RqL = 40°C/W/in. Typically and 44°C/W/in Maximum.
40 RqJ = 2°C/W typically and 4°C/W Maximum.
Since RqJ is so low, measurements of the case temperature, TC, will be
SINGLE LEAD TO HEAT SINK, approximately equal to junction temperature in practical lead mounted
35
R θJL , THERMAL RESISTANCE,
INSIGNIFICANT HEAT FLOW applications. When used as a 60 Hz rectifierm the slow thermal response
JUNCTION–TO–LEAD( ° C/W)
30 THROUGH OTHER LEAD holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may
be found from: TL = 175°–RθJL PF. PF may be found from Figure 7.
25 The recommended method of mounting to a P.C. board is shown on the
sketch, where RθJA is approximately 25°C/W for a 1–1/2” x 1–1/2” copper
20
ÉÉ
surface area. Values of 40°C/W are typical for mounting to terminal strips
ÉÉ
or P.C. boards where available surface area is small.
15
ÉÉ
ÉÉ
10
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
ÉÉ
5.0
ÉÉ
0
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0
L, LEAD LENGTH (INCHES)
ÉÉ
ÉÉ
Board Ground Plane
Figure 8. Steady State Thermal Resistance Recommended mounting for half wave circuit

MR750 MR751 MR752 MR754 MR756 MR758 MR760
100 30
20
t rr , REVERSE RECOVERY TIME ( m s)

RELATIVE EFFICIENCY (%) 70 TJ = 25°C
TJ = 25°C
TJ = 175°C 10
50
7.0 IF = 5 A
5.0 3A
CURRENT INPUT WAVEFORM
1A
30 3.0 IF
0
2.0 IR
trr
20 1.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REPETITION FREQUENCY (kHz) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 9. Rectification Efficiency Figure 10. Reverse Recovery Time
1000 1.0
700 uf
TJ = 25°C
t fr , FORWARD RECOVERY TIME ( m s)

500 0.7
TJ = 25°C
tfr ufr
300
C, CAPACITANCE (pF)
0.5
200
ufr = 1.0 V
100 0.3
70
50
0.2
30
20 ufr = 2.0 V
10 0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD PULSE CURRENT (AMP)
Figure 11. Junction Capacitance Figure 12. Forward Recovery Time
For a square wave input of amplitude Vm, the efficiency

RS factor becomes:
RL VO
V 2m
+ + 50%
2R L
σ (square) .
Figure 13. Single–Phase Half–Wave V 2m 100% (3)
Rectifier Circuit RL
The rectification efficiency factor σ shown in Figure 9 was (A full wave circuit has twice these efficiencies)
calculated using the formula: As the frequency of the input signal is increased, the re-
verse recovery time of the diode (Figure 10) becomes signifi-
V2o(dc) (1)
RL cant, resulting in an increasing ac voltage component across
σ + P(rms) + V2o(rms) .100% +
P (dc) V 2o (dc)
)
V 2o (ac) V 2o (dc)
.100% RL which is opposite in polarity to the forward current, there-
by reducing the value of the efficiency factor σ, as shown on
RL
Figure 9.
For a sine wave input Vm sin (wt) to the diode, assumed It should be emphasized that Figure 9 shows waveform ef-
lossless, the maximum theoretical efficiency factor becomes: ficiency only; it does not provide a measure of diode losses.
Data was obtained by measuring the ac component of Vo
V2m with a true rms ac voltmeter and the dc component with a dc
p 2R L
σ (sine) + .
V2m 100% + π42 .100% + 40.6% (2)
voltmeter. The data was used in Equation 1 to obtain points
for Figure 9.
4R L

MOTOROLA
Medium-Current Silicon MR2500

Rectifiers Series
. . . compact, highly efficient silicon rectifiers for medium–current applications MR2504 and MR2510 are
requiring: Motorola Preferred Devices
• High Current Surge — 400 Amperes @ TJ = 175°C

• Peak Performance @ Elevated Temperature — 25 Amperes @
TC = 150°C MEDIUM–CURRENT
SILICON RECTIFIERS
• Low Cost
50–1000 VOLTS
• Compact, Molded Package — For Optimum Efficiency in a Small Case 25 AMPERES
Configuration
DIFFUSED JUNCTION
• Available with a Single Lead Attached, Consult Factory
• Finish: All External Surfaces Corrosion Resistant and Terminals are
Readily Solderable
• Lead Temperature for Soldering Purposes: requires a custom temperature
soldering profile CASE 193–04
• Polarity: Cathode Polarity Band
• Shipped 5000 units per box
• Marking: R2500, R2501, R2502, R2504, R2506, R2510
MAXIMUM RATINGS
Characteristic Symbol MR2500 MR2501 MR2502 MR2504 MR2506 MR2510 Unit
Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 1000 Volts
Non–Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 1200 Volts
(Halfwave, single phase, 60 Hz peak)
(Single phase, resistive load, 60 Hz,
TC = 150°C)
Non–Repetitive Peak Surge Current IFSM 400 (for 1 cycle) Amps
Operating and Storage Junction TJ, Tstg *65 to +175 °C
Temperature Range
(Single Side Cooled)
Characteristics and Conditions Symbol Max Unit
Maximum Instantaneous Forward Voltage vF 1.18 Volts
(iF = 78.5 Amps, TC = 25°C)
Maximum Reverse Current (rated dc voltage) IR µA
TC = 25°C 100
TC = 100°C 500
Rev 2

MR2500 Series
700 600
IFSM , PEAK HALF WAVE CURRENT (AMP)

VRRM MAY BE APPLIED BETWEEN
500 TJ = 25°C TYPICAL EACH CYCLE OF SURGE. THE TJ
400 NOTED IS TJ PRIOR TO SURGE
300 MAXIMUM f = 60 Hz
300
200 25°C
200 TJ = 175°C
100
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
70
100
50 1 CYCLE
80
30 60
1.0 2.0 5.0 10 20 50 100
20
NUMBER OF CYCLES
Figure 2. Non–Repetitive Surge Current

10
7.0
5.0 +0.5
3.0 0
COEFFICIENT (mV/ °C)

2.0
–0.5
1.0 TYPICAL RANGE
0.7 –1.0
0.5
–1.5
0.3
0.2 –2.0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) iF, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 1. Forward Voltage Figure 3. Forward Voltage Temperature

Coefficient
50 50
I F(AV) , AVERAGE FORWARD CURRENT (AMP)
+ 20
SINE WAVE I
+ p (Sine Wave Resistive Load)
dc I (FM)
(FM) CAPACITIVE 10 5.0
I I dc
(AV) LOADS (AV)
40 40
30 30
SQUARE
Ǌ
WAVE
20 20
SINE WAVE
5.0 RESISTIVE LOAD
Capacitive
10 10 10
Loads 20
0 0
125 130 135 140 145 150 155 160 165 170 175 0 10 20 30 40 50
TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMP)

MR2500 Series
1.0
0.7
0.5
0.3
0.2 RqJC(t) = RqJC • r(t)
(NORMALIZED)
NOTE 1
0.1
0.07
0.05
0.03
0.02
0.01
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
t, TIME (ms)
Ppk Ppk
500
TIME
t1
300 TJ = 25°C
To determine maximum junction temperature of the diode in a C, CAPACITANCE (pF)
given situation, the following procedure is recommended:
The temperature of the case should be measured using a 200
thermocouple placed on the case at the temperature reference
point (see the outline drawing on page 1). The thermal mass
connected to the case is normally large enough so that it will not ALL DEVICES
significantly respond to heat surges generated in the diode as a ALL DEVICES EXCEPT MR2500
result of pulsed operation once steady–state conditions are 100
achieved. Using the measured value of T C , the junction
temperature may be determined by: 70
TJ = TC + n TJC
50
where n TJC is the increase in junction temperature above the case 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
@ * @
n TJC = Ppk RθJC [D + (1 D) r(t1 + tp) + r(tp) r(t1)] where * VR, REVERSE VOLTAGE (VOLTS)
from Figure 6, i.e.: Figure 7. Capacitance
time t1 + tp.
1.0 20
TJ = 25°C TJ = 25°C
t fr , FORWARD RECOVERY TIME ( m s)
0.7
t rr , REVERSE RECOVERY TIME ( m s)
IF
uf 10 0
0.5 ufr = 1.0 V IR 0.25 IR
tfr ufr 7.0
IF = 10 A trr
5.0
0.3 1.0 A
3.0
0.2 5.0 A
2.0
2.0 V
0.1 1.0
1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IF, FORWARD CURRENT (AMP) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time

MR2500 Series
60
40 TJ = 25°C
s , EFFICIENCY FACTOR
20
CURRENT INPUT WAVEFORM
10
8.0
6.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
f, FREQUENCY (kHz)
Figure 10. Rectification Waveform Efficiency
RECTIFICATION EFFICIENCY NOTE
RS
RL VO
Figure 11. Single–Phase Half–Wave Rectifier Circuit
The rectification efficiency factor σ shown in Figure 10 was For a square wave input of amplitude Vm, the efficiency
calculated using the formula: factor becomes:
V2o(dc) (1) V 2m
+ + 50%
RL 2R L
σ + PP(rms)
(dc)
+ V2o(rms) .100% + V2o ac)V2)o(dc)V2o(dc) .100% (
σ (square) .
V 2m 100% (3)
RL RL
For a sine wave input Vm sin (ωt) to the diode, assume (A full wave circuit has twice these efficiencies)
lossless, the maximum theoretical efficiency factor becomes: As the frequency of the input signal is increased, the re-
verse recovery time of the diode (Figure 9) becomes signifi-
cant, resulting in an increasing ac voltage component across
V2m
RL which is opposite in polarity to the forward current, there-
p 2R L
σ (sine) + .
V2m 100% + π42 .100% + 40.6% (2)
by reducing the value of the efficiency factor σ, as shown on
Figure 10.
4R L It should be emphasized that Figure 10 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the ac component
of VO with a true rms ac voltmeter and the dc component with
a dc voltmeter. The data was used in Equation 1 to obtain
points for Figure 10.

MR2500 Series
ASSEMBLY AND SOLDERING INFORMATION Exceeding these recommended maximums can result in
There are two basic areas of consideration for successful electrical degradation of the device.
implementation of button rectifiers:
1. Mounting and Handling
2. Soldering
SOLDERING
each should be carefully examined before attempting a fin-
The button rectifier is basically a semiconductor chip
ished assembly or mounting operation.
bonded between two nickel–plated copper heat sinks with
MOUNTING AND HANDLING an encapsulating material of thermal–setting silicone. The
The button rectifier lends itself to a multitude of assembly exposed metal areas are also tin plated to enhance solder-
arrangements but one key consideration must always be ability.
included: In the soldering process it is important that the tempera-
One Side of the Connections to ture not exceed 250°C if device damage is to be avoided.
the Button Must Be Flexible! Strain Relief Terminal Various solder alloys can be used for this operation but two
for Button Rectifier types are recommended for best results:
This stress relief to the button should
Copper 1. 96.5% tin, 3.5% silver; Melting point is 221°C (this
also be chosen for maximum contact
area to afford the best heat transfer Terminal particular eutetic is used by Motorola for its button
— but not at the expense of flexibility. Button rectifier assemblies).
For an annealed copper terminal a 2. 63% tin, 37% lead; Melting point 183°C (eutetic).
Base
thickness of 0.015″ is suggested. (Heat Sink Material)
Solder is available as preforms or paste. The paste con-
tains both the metal and flux and can be dispensed rapidly.
The base heat sink may be of various materials whose The solder preform requires the application of a flux to as-
shape and size are a function of the individual application sure good wetting of the solder. The type of flux used de-
and the heat transfer requirements. pends upon the degree of cleaning to be accomplished and
is a function of the metals involved. These fluxes range from
Common
Materials Advantages and Disadvantages a mild rosin to a strong acid; e.g., Nickel plating oxides are
Steel Low Cost; relatively low heat conductivity best removed by an acid base flux while an activated rosin
Copper High Cost; high heat conductivity flux may be sufficient for tin plated parts.
Aluminum Medium Cost; medium heat conductivity Since the button is relatively light–weight, there is a ten-
Relatively expensive to plate and not all platers dency for it to float when the solder becomes liquid. To pre-
can process aluminum. vent bad joints and misalignment it is suggested that a
weighting or spring loaded fixture be employed. It is also im-
Handling of the button during assembly must be relatively portant that severe thermal shock (either heating or cooling)
gentle to minimize sharp impact shocks and avoid nicking of be avoided as it may lead to damage of the die or encapsu-
the plastic. Improperly designed automatic handling equip-
lant of the part.
ment is the worst source of unnecessary shocks. Techniques
Button holding fixtures for use during soldering may be of
for vacuum handling and spring loading should be investi-
various materials. Stainless steel has a longer use life while
gated.
black anodized aluminum is less expensive and will limit heat
The mechanical stress limits for the button diode are as
follows: reflection and enhance absorption. The assembly volume
Compression 32 lbs. 142.3 Newton will influence the choice of materials. Fixture dimension toler-
Tension 32 lbs. 142.3 Newton ances for locating the button must allow for expansion during
Torsion 6–inch lbs. 0.68 Newton–meters soldering as well as allowing for button clearance.
Shear 55 lbs. 244.7 Newton
MECHANICAL STRESS HEATING TECHNIQUES

The following four heating methods have their advantages
COMPRESSION and disadvantages depending on volume of buttons to be
soldered.
1. Belt Furnaces readily handle large or small volumes
and are adaptable to establishment of “on–line’’
TORSION assembly since a variable belt speed sets the run rate.
Individual furnace zone controls make excellent
temperature control possible.
2. Flame Soldering involves the directing of natural gas
TENSION
flame jets at the base of a heatsink as the heatsink is
indexed to various loading–heating–cooling–unloading
positions. This is the most economical labor method of
SHEAR soldering large volumes. Flame soldering offers good
temperature control but requires sophisticated
temperature monitoring systems such as infrared.

MR2500 Series
ASSEMBLY AND SOLDERING INFORMATION (continued)
3. Ovens are good for batch soldering and are production 1. Peeling or plating separation is generally seen when a
limited. There are handling problems because of slow button is broken away for solder inspection. If heatsink
cooling. Response time is load dependent, being a or terminal base metal is present the plating is poor and
function of the watt rating of the oven and the mass of must be corrected.
parts. Large ovens may not give an acceptable 2. Thin plating allows the solder to penetrate through to the
temperature gradient. Capital cost is low compared to base metal and can give a poor connection. A suggested
belt furnaces and flame soldering. minimum plating thickness is 300 microinches.
4. Hot Plates are good for soldering small quantities of 3. Contaminated soldering surfaces may out–gas and
prototype devices. Temperature control is fair with cause non–wetting resulting in voids in the solder
overshoot common because of the exposed heating connection. The exact cause is not always readily
surface. Solder flow and positioning can be corrected apparent and can be because of:
during soldering since the assembly is exposed. (a) improper plating
Investment cost is very low. (b) mishandling of parts
Regardless of the heating method used, a soldering profile (c) improper and/or excessive storage time
giving the time–temperature relationship of the particular
method must be determined to assure proper soldering. Pro- SOLDER PROCESS MONITORING
filing must be performed on a scheduled basis to minimize Continuous monitoring of the soldering process must be
poor soldering. The time–temperature relationship will established to minimize potential problems. All parts used in
change depending on the heating method used. the soldering operation should be sampled on a lot by lot
basis by assembly of a controlled sample. Evaluate the con-
trol sample by break–apart tests to view the solder connec-
SOLDER PROCESS EVALUATION tions, by physical strength tests and by dimensional
Characteristics to look for when setting up the soldering characteristics for part mating.
process: A shear test is a suggested way of testing the solder bond
I Overtemperature is indicated by any one or all three of strength.
the following observations.
1. Remelting of the solder inside the button rectifier shows POST SOLDERING OPERATION CONSIDERATIONS
the temperature has exceeded 285°C and is noted by After soldering, the completed assembly must be
“islands’’ of shiny solder and solder dewetting when a unloaded, washed and inspected.
unit is broken apart.
Unloading must be done carefully to avoid unnecessary
2. Cracked die inside the button may be observed by a
stress. Assembly fixtures should be cooled to room tem-
moving reverse oscilloscope trace when pressure is
perature so solder profiles are not affected.
applied to the unit.
3. Cracked plastic may be caused by thermal shock as well Washing is mandatory if an acid flux is used because of its
as overtemperature so cooling rate should also be ionic and corrosive nature. Wash the assemblies in agi-
checked. tated hot water and detergent for three to five minutes.
II Cold soldering gives a grainy appearance and solder After washing; rinse, blow off excessive water and bake 30
build–up without a smooth continuous solder fillet. The minutes at 150°C to remove trapped moisture.
temperature must be adjusted until the proper solder fillet Inspection should be both electrical and physical. Any
is obtained within the maximum temperature limits. rejects can be reworked as required.
III Incomplete solder fillets result from insufficient solder or
parts not making proper contact. SUMMARY
IV Tilted buttons can cause a void in the solder between The Button Rectifier is an excellent building block for spe-
the heatsink and button rectifier which will result in poor cialized applications. The prime example of its use is the out-
heat transfer during operation. An eight degree tilt is a put bridge of the automative alternator where millions are
suggested maximum value. used each year. Although the material presented here is not
V Plating problems require a knowledge of plating opera- all inclusive, primary considerations for use are presented.
tions for complete understanding of observed deficien- For further information, contact the nearest Motorola Sales
cies. Office or franchised distributor.

MOTOROLA
Complementary Medium
Current Silicon Rectifiers MR4422CT
For Linear Power Supply Applications MR4422CTR
. . . using monolithic silicon technology for perfect matching of diodes in center
tap configuration. These devices have the following features:
• Soft Reverse Recovery for Low Noise POWER RECTFIERS
• High Surge Current Capability 30 AMPERES
• 150°C Operating Junction Temperature 100 VOLTS
• Direct Replacement for Varo R711 and R711A
• Case: Welded Steel can, hermetically sealed 1
CASE
2
MR4422CT
10 Seconds
2
• Shipped 100 units per foam tray 1 1
• Marking: R4422T, R4422R CASE
2
CASE 1–07
(TO–204AA)
MR4422CTR
(Rated VR) TC = 125°C Per Device 30
Peak Repetitive Forward Current, Per Diode Leg IFRM 30 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 2.0 Amps

Thermal Resistance — Junction to Case RθJC 1.4 5C/W

Maximum Instantaneous Forward Voltage (1) iF Volts
(IF = 15 Amps, TC = 25°C) 1.2
(IF = 10 Amps, TC = 125°C) 1.1
Rev 1

MOTOROLA
Advance Information MR2535L

Overvoltage MR2535S
Transient Suppressors
. . . designed for applications requiring a low voltage rectifier with reverse
avalanche characteristics for use as reverse power transient suppressors.
Developed to suppress transients in the automotive system, these devices MEDIUM CURRENT
operate in the forward mode as standard rectifiers or reverse mode as power OVERVOLTAGE
avalanche rectifier and will protect electronic equipment from overvoltage TRANSIENT
conditions. SUPPRESSORS
• Avalanche Voltage 24 to 32 Volts
• High Power Capability
• Economical
• Increased Capacity by Parallel Operation
CASE 194–04
Readily Solderable
• Polarity: cathode polarity band
• MR2535L shipped 1000 units per plastic bag. Available Tape and Reeled,
800 units per reel by adding a “RL” suffix to the part number. CATHODE
• MR2535S shipped pocket tape and reeled, 500 per 13″ reel
• Marking: MR2535L, MR2535S CASE 421A–01
MAXIMUM RATINGS
DC Peak Repetitive Reverse Voltage VRRM 20 Volts
Repetitive Peak Reverse Surge Current IRSM 110 Amps
(Time Constant = 10 ms, Duty Cycle ≤ 1%, TC = 25°C) (See Figure 1)

(Single Phase, Resistive Load, 60 Hz, TC = 150°C)

Surge Supplied at Rated Load Conditions
Halfwave, Single Phase
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +175 °C
Lead
Characteristic Length Symbol Max Unit
Thermal Resistance, Junction to Lead @ Both Leads to Heat Sink, 1/4″ RθJL 7.5 °C/W
Equal Length 3/8″ 10
1/2″ 13
Thermal Resistance Junction to Case RθJC 0.8* °C/W
*Typical
Rev 2

MR2535L MR2535S
Characteristic Symbol Min Max Unit
Instantaneous Forward Voltage (1) (iF = 100 Amps, TC = 25°C) vF — 1.1 Volts
Reverse Current (VR = 20 Vdc, TC = 25°C) IR — 200 nAdc
Breakdown Voltage (1) (IR = 100 mAdc, TC = 25°C) V(BR) 24 32 Volts
Breakdown Voltage (1) (IR = 90 Amp, TC = 150°C, PW = 80 µs) V(BR) — 40 Volts
Breakdown Voltage Temperature Coefficient V(BR)TC — 0.096* %/°C
Forward Voltage Temperature Coefficient @ IF = 10 mA VFTC — 2* mV/°C
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
*Typical
IRSM(EXP)
IRSM(EXP)
2
10 20 30 40 50 60
(TIME IN ms)
Figure 1. Surge Current Characteristics

Section 6
Tape and Reel/
Packaging Specifications
Rectifier Device Data Tape and Reel/Packaging Specifications

6–1
Tape and Reel Specifications
and Packaging Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
• Two Reel Sizes Available (7″ and 13″) • SO–8, OPTO SO–8, SOT–223, SMB in 12 mm Tape
• Used for Automatic Pick and Place Feed Systems • DPAK, SO–14, SO–16, SMC in 16 mm Tape
• Minimizes Product Handling • D2PAK, 6–Pin Optoisolators in 24 mm Tape
• EIA 481, –1, –2
• SOD–123, SC–59, SC–70/SOT–323, SOT–23, SOT–143
in 8 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD–123 SC–59, SC–70/SOT–323, SOT–23 SOT–143

8 mm 8 mm 8 mm
SOT–223 SO–8, OPTO SO–8 SO–14, 16 SMB SMC

12 mm 12 mm 16 mm
12 mm 16 mm
DPAK D2PAK 6–Pin Optoisolators

16 mm 24 mm 24 mm
DIRECTION
OF FEED
Tape and Reel/Packaging Specifications Rectifier Device Data

6–2
EMBOSSED TAPE AND REEL ORDERING INFORMATION
Devices Per Reel

Tape Width Pitch Reel Size and Minimum Device
Package (mm) mm (inch) mm (inch) Order Quantity Suffix
DPAK 16 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 T4
D2PAK 24 16.0 ± 0.1 (.630 ± .004) 330 (13) 800 T4
SC–59 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
SC–70/SOT–323 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
8 330 (13) 10,000 T3
SMB 12 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 T3
SMC 16 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 T3
SO–8, OPTO SO–8 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 500 R1
12 330 (13) 2,500 R2
SO–14 16 8.0 ± 0.1 (.315 ± .004) 178 (7) 500 R1
16 330 (13) 2,500 R2
SO–16 16 8.0 ± 0.1 (.315 ± .004) 178 (7) 500 R1
16 330 (13) 2,500 R2
SOD–123 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
8 330 (13) 10,000 T3
SOT–23 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
8 330 (13) 10,000 T3
SOT–143 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
8 330 (13) 10,000 T3
SOT–223 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 1,000 T1
12 330 (13) 4,000 T3
6–Pin Optoisolators 24 12.0 ± 0.1 (.472 ± .004) 330 (13) 1000 R2

6–3
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
10 Pitches Cumulative Tolerance on Tape

P0 ± 0.2 mm
K
(± 0.008″)
D P2
t
E
Top Cover
Tape
A0
F W
B1 K0 B0
See
Note 1 P
D1
Embossment Center Lines
For Components
of Cavity
2.0 mm x 1.2 mm and Larger
For Machine Reference Only

Including Draft and RADII
Concentric Around B0 User Direction of Feed
* Top Cover Tape

Thickness (t1)
Bar Code Label
0.10 mm
R Min (.004″) Max.
Tape and Components
Shall Pass Around Radius “R”
Without Damage
Bending Radius Embossed Carrier
10° 100 mm Embossment
Maximum Component Rotation
(3.937″)
1 mm Max
Typical Component
Cavity Center Line
Tape
1 mm
(.039″) Max 250 mm
(9.843″)
Typical Component Camber (Top View)
Center Line Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size B1 Max D D1 E F K P0 P2 R Min T Max W Max
8 mm 4.55 mm 1.5 + 0.1 mm 1.0 Min 1.75 ± 0.1 mm 3.5 ± 0.05 mm 2.4 mm Max 4.0 ± 0.1 mm 2.0 ± 0.1 mm 25 mm 0.6 mm 8.3 mm
(.179″) – 0.0 (.039″) (.069 ± .004″) (.138 ± .002″) (.094″) (.157 ± .004″) (.079 ± .002″) (.98″) (.024″) (.327″)
( 0 9 + .004″
(.059 004″
12 mm 8.2 mm – 0.0) 1.5 mm Min 5.5 ± 0.05 mm 6.4 mm Max 30 mm 12 ± .30 mm
(.323″) (.060″) (.217 ± .002″) (.252″) (1.18″) (.470 ± .012″)
16 mm 12.1 mm 7.5 ± 0.10 mm 7.9 mm Max 16.3 mm

(.476″) (.295 ± .004″) (.311″) (.642″)
24 mm 20.1 mm 11.5 ± 0.1 mm 11.9 mm Max 24.3 mm

(.791″) (.453 ± .004″) (.468″) (.957″)
Metric dimensions govern — English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1: the component cannot rotate more than 10° within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 6–3.

6–4
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
1.5 mm Min 13.0 mm ± 0.5 mm

(.06″) (.512″ ± .002″)
A 20.2 mm Min 50 mm Min

(.795″) (1.969″)
Full Radius
Inside Dimension
G
Measured Near Hub
Size A Max G T Max

8 mm 330 mm 8.4 mm + 1.5 mm, – 0.0 14.4 mm
(12.992″) (.33″ + .059″, – 0.00) (.56″)
12 mm 330 mm 12.4 mm + 2.0 mm, – 0.0 18.4 mm
(12.992″) (.49″ + .079″, – 0.00) (.72″)
16 mm 360 mm 16.4 mm + 2.0 mm, – 0.0 22.4 mm
(14.173″) (.646″ + .078″, – 0.00) (.882″)
24 mm 360 mm 24.4 mm + 2.0 mm, – 0.0 30.4 mm
(14.173″) (.961″ + .070″, – 0.00) (1.197″)
Reel Dimensions
Metric Dimensions Govern — English are in parentheses for reference only

6–5
LEAD TAPE PACKAGING STANDARDS FOR AXIAL–LEAD COMPONENTS
MPQ
Device Quantity Component Tape Reel Reel Max Off
Product Title Per Reel Spacing Spacing Dimension Dimension Alignment
Case Type Category Suffix (Item 3.3.7) A Dimension B Dimension C D (Max) E
Case 17–02 Surmetic 40 & RL 4000 0.2 +/– 0.015 2.062 +/– 0.059 3 14 0.047
600 Watt TVS
Case 41A–02 1500 Watt TVS RL4 1500 0.4 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Case 51–02 DO–7 Glass RL 3000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
(For Reference only)
Case 59–03 DO–41 Glass & RL 6000 0.2 +/– 0.015 2.062 +/– 0.059 3 14 0.047
DO–41 Surmetic 30
Rectifier
Case 59–04 500 Watt TVS RL 5000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Rectifier
Case 194–04 110 Amp TVS RL 800 0.4 +/– 0.02 1.875 +/– 0.059 3 14 0.047
(Automotive)
Rectifier
Case 267–02 Rectifier RL 1500 0.4 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Case 299–02 DO–35 Glass RL 5000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Table 1. Packaging Details (all dimensions in inches)
Overall LG
Kraft Paper Item 3.1.2
Reel B
Roll Pad A
Item 3.1.1
Max Off
Alignment
E
Container
Tape, Blue Item 3.3.5 D1 D2
Tape, White 0.250
Item 3.2 Item 3.2 Both Sides Item 3.3.2
(Cathode) (Anode) 0.031
Item 3.3.5
Figure 1. Reel Packing Figure 2. Component Spacing
Optional Design
1.188
3.5 Dia.
Item 3.4
D
C
Figure 3. Reel Dimensions

6–6
Section 7
Surface Mount Information
Rectifier Device Data Surface Mount Information

7–1
INFORMATION FOR USING SURFACE MOUNT PACKAGES
RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total geometry, the packages will self align when subjected to a
design. The footprint for the semiconductor packages must be solder reflow process.
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE

The power dissipation for a surface mount device is a 160
RθJA , THERMAL RESISTANCE, JUNCTION

function of the drain/collector pad size. These can vary from
the minimum pad size for soldering to a pad size given for Board Material = 0.0625″ TA = 25°C
maximum power dissipation. Power dissipation for a surface 140 G–10/FR–4, 2 oz Copper
TO AMBIENT (°C/W)
mount device is determined by TJ(max), the maximum rated 0.8 Watts
junction temperature of the die, RθJA, the thermal resistance
from the device junction to ambient, and the operating 120
temperature, TA. Using the values provided on the data sheet, 1.5 Watts
1.25 Watts*
PD can be calculated as follows:
TJ(max) – TA 100
PD =
RθJA
*Mounted on the DPAK footprint
The values for the equation are found in the maximum 80
0.0 0.2 0.4 0.6 0.8 1.0
ratings table on the data sheet. Substituting these values into
A, AREA (SQUARE INCHES)
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For example, for Figure 1. Thermal Resistance versus Drain Pad
a SOT–223 device, PD is calculated as follows. Area for the SOT–223 Package (Typical)
100
Board Material = 0.0625″

PD = 150°C – 25°C = 800 milliwatts G–10/FR–4, 2 oz Copper
156°C/W 1.75 Watts
80
The 156°C/W for the SOT–223 package assumes the use
TO AMBIENT (°C/W)
TA = 25°C
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
60
are other alternatives to achieving higher power dissipation 3.0 Watts
from the surface mount packages. One is to increase the area
of the drain/collector pad. By increasing the area of the
40
drain/collector pad, the power dissipation can be increased. 5.0 Watts
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board which
20
can defeat the purpose of using surface mount technology. 0 2 4 6 8 10
For example, a graph of RθJA versus drain pad area is shown A, AREA (SQUARE INCHES)
in Figures 1, 2 and 3. Figure 2. Thermal Resistance versus Drain Pad
Area for the DPAK Package (Typical)
70
Board Material = 0.0625″

Another alternative would be to use a ceramic substrate or
G–10/FR–4, 2 oz Copper TA = 25°C
an aluminum core board such as Thermal Clad. Using a 60
board material such as Thermal Clad, an aluminum core 2.5 Watts
TO AMBIENT (°C/W)
board, the power dissipation can be doubled using the same

footprint. 50
3.5 Watts
40
5 Watts
30
20
0 2 4 6 8 10 12 14 16
A, AREA (SQUARE INCHES)
Figure 3. Thermal Resistance versus Drain Pad
Area for the D2PAK Package (Typical)
Surface Mount Information Rectifier Device Data

7–2
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed packages. The pattern of the opening in the stencil for the
circuit board, solder paste must be applied to the pads. Solder drain pad is not critical as long as it allows approximately 50%
stencils are used to screen the optimum amount. These of the pad to be covered with paste.
ÇÇ ÇÇÇÇ ÇÇÇ
stencils are typically 0.008 inches thick and may be made of
brass or stainless steel. For packages such as the SC–59,
SC–70/SOT–323, SOD–123, SOT–23, SOT–143, SOT–223,
ÇÇ ÇÇÇÇ ÇÇÇ
ÇÇ ÇÇ
SO–8, SO–14, SO–16, and SMB/SMC diode packages, the SOLDER PASTE
ÇÇ ÇÇÇÇÇ
stencil opening should be the same as the pad size or a 1:1 OPENINGS
registration. This is not the case with the DPAK and D2PAK
packages. If a 1:1 opening is used to screen solder onto the
drain pad, misalignment and/or “tombstoning” may occur due
to an excess of solder. For these two packages, the opening
ÇÇ ÇÇÇÇÇ STENCIL
in the stencil for the paste should be approximately 50% of the

tab area. The opening for the leads is still a 1:1 registration. Figure 4. Typical Stencil for DPAK and
Figure 4 shows a typical stencil for the DPAK and D2PAK D2PAK Packages
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated • After soldering has been completed, the device should be
temperature of the device. When the entire device is heated allowed to cool naturally for at least three minutes.
to a high temperature, failure to complete soldering within a Gradual cooling should be used since the use of forced
short time could result in device failure. Therefore, the cooling will increase the temperature gradient and will
following items should always be observed in order to result in latent failure due to mechanical stress.
minimize the thermal stress to which the devices are • Mechanical stress or shock should not be applied during
subjected. cooling.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.* * Soldering a device without preheating can cause excessive
• When preheating and soldering, the temperature of the thermal shock and stress which can result in damage to the
leads and the case must not exceed the maximum device.
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
* Due to shadowing and the inability to set the wave height to
the difference should be a maximum of 10°C.
incorporate other surface mount components, the D2PAK is
• The soldering temperature and time should not exceed not recommended for wave soldering.
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.

7–3
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control experienced on the surface of a test board at or near a central
settings that will give the desired heat pattern. The operator solder joint. The two profiles are based on a high density and
must set temperatures for several heating zones and a figure a low density board. The Vitronics SMD310 convection/in-
for belt speed. Taken together, these control settings make up frared reflow soldering system was used to generate this
a heating “profile” for that particular circuit board. On machines profile. The type of solder used was 62/36/2 Tin Lead Silver
controlled by a computer, the computer remembers these with a melting point between 177 –189°C. When this type of
profiles from one operating session to the next. Figure 5 shows
furnace is used for solder reflow work, the circuit boards and
a typical heating profile for use when soldering a surface
solder joints tend to heat first. The components on the board
mount device to a printed circuit board. This profile will vary
among soldering systems, but it is a good starting point. are then heated by conduction. The circuit board, because it
Factors that can affect the profile include the type of soldering has a large surface area, absorbs the thermal energy more
system in use, density and types of components on the board, efficiently, then distributes this energy to the components.
type of solder used, and the type of board or substrate material Because of this effect, the main body of a component may be
being used. This profile shows temperature versus time. The up to 30 degrees cooler than the adjacent solder
line on the graph shows the actual temperature that might be joints.
STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7

PREHEAT VENT HEATING HEATING HEATING VENT COOLING
ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
“RAMP” “RAMP” “SOAK” “SPIKE” 205° TO 219°C
200°C 170°C PEAK AT
DESIRED CURVE FOR HIGH SOLDER JOINT
MASS ASSEMBLIES 160°C
150°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
MASS OF ASSEMBLY)
100°C
DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL) TMAX

Figure 5. Typical Solder Heating Profile

7–4
Footprints for Soldering
0.15
3.8
0.089
2.261 0.079
2.0
0.108 0.248
2.743 6.3
0.091 0.091
2.3 2.3
0.085
2.159 0.079
2.0
inches
0.059 0.059 0.059 inches
mm 1.5 1.5 1.5 mm
SMB SOT–223
0.165 0.118
0.171 4.191 3.0
4.343 0.100
2.54
0.063
1.6
0.150 0.190
3.810 0.243
4.826 6.172
0.110
2.794 inches
mm
inches
SMC
DPAK mm
0.33
8.38
0.91
ÉÉÉÉ ÉÉÉÉ
0.036
ÉÉÉÉ ÉÉÉÉ
0.08
2.032
ÉÉÉÉ ÉÉÉÉ
0.42 0.24 1.22
10.66 6.096 0.048
0.12
0.04
1.016 ÉÉÉÉ 2.36
0.093
ÉÉÉÉ
4.19 mm
3.05
0.165 inches
0.63
inches
17.02
mm
D2PAK SOD–123

7–5
7–6
Section 8
TO–220 Leadform Information
Rectifier Device Data TO–220 Leadform Information

8–1
Leadform Options — TO-220 (Case 221A)
• Leadform options require assignment of a special part number before ordering.
• Contact your local Motorola representative for special part number and pricing.
• 10,000 piece minimum quantity orders are required.
• Leadform orders are non-cancellable after processing.
• Leadforms apply to both Motorola Case 221A-04 and 221A-06 except as noted.
LEADFORM AS LEADFORM BC
0.950 MIN. 1.00 MIN.
0.100 REF.
0.20 REF.
0.736 ± 0.010
0.100 TYP.
0.620 ± 0.015
0.750 MAX.
0.100 TYP.
0.125 ± 0.010 MOUNTING

SURFACE
LEADFORM AC LEADFORM AD
CASE A B
221A-04 0.950 Min. 0.880 Min.
221A-06 0.880 Min. 0.840 Min.
0.930
± 0.015
1.030
± 0.020
0.250 B
UNDERSIDE 0.250 ± 0.010 UNDERSIDE ± 0.010
0.652 0.652
OF LEAD ± 0.015 OF LEAD ± 0.015
CL CL
CL
A
MOUNTING 0.095 ± 0.010 BOTTOM 0.095 ± 0.010
SURFACE OF 0.020
HEATSINK ± 0.010
TO–220 Leadform Information Rectifier Device Data

8–2
TO-220 Leadform Options (continued)
LEADFORM AN LEADFORM BA
CASE A B
221A-04 0.220 Min. 0.325 Min.
221A-06 0.190 Min. 0.290 Min.
0.040 RAD
± 0.015
" 0.02
0.380
" 0.03
0.186
"
0.285
0.02 B A 0.020 RAD.
TYP. MOUNTING
0.580 SURFACE
"
0.240 0.100 TYP. 0.100 0.586
MOUNTING 0.015 ± 0.010
SURFACE ± 0.020 TYP. 0.616
LEADFORM BL LEADFORM AK
" 0.010
0.140
CASE A
221A-04 0.325 Min.
0.500
0.600
± 0.02 221A-06 0.290 Min.
± 0.015
" 0.010
0.590
0.150 MIN
" 0.015
0.775
UNDERSIDE
OF LEAD
0.095 ± 0.010
0.06 R 0.017
0.100 REF REF
A 0.025 R 0.200 REF
0.050 REF
MAX
MOUNTING
SURFACE 0.015
0.015
0.032 REF

8–3
LEADFORM AF LEADFORM BS
MOUNTING
SURFACE
0.660 0.607
± 0.02 0.557 0.080
REF.
0.040 MIN. ± 0.015
± 0.015
CL LEAD
0.050 REF.
" 0.005
0.018
0.100 REF. 0.325
0.200 REF. ± 0.020
" 0.020
0.296
LEADFORM BR LEADFORM AU
CASE A
221A-04 0.920 Min.
221A-06 0.885 Min.
0.080 REF.
0.820
± 0.015
" 0.01
0.574
0.170 ± 0.015
LEADFORM 3 LEADS 0.095 REF.
0.190 ± 0.020

8–4
LEADFORM BU LEADFORM BV
0.680 ± 0.005 0.005

± 0.005
UNDERSIDE 0.102 ± 0.005

OF LEAD
0.094 ± 0.01 0.680 ± 0.005
0.005 ± 0.005
0.102 ± 0.003
MOUNTING
SURFACE
LEADFORM BD LEADFORM DW
0.100 REF.
" 0.010
0.735
0.800 ± 0.050
0.20 REF. 3 LEADS
" 0.010
0.610
0.223
± 0.010

8–5
LEADFORM BG LEADFORM AJ
CASE A
221A-04 0.360 ± 0.010
221A-06 Lead Not Trimmed
0.300 Min.
" 0.01
0.620 REF. 0.100 REF. 0.765
0.780 ± 0.015
0.200 REF.
" 0.004 " 0.010

0.017 0.580
0.050 REF.
0.032 REF.
0.06 R
A

8–6
Section 9
and Footprints
Rectifier Device Data Package Outline Dimensions and Footprints

9–1
Package Outline Dimensions and Footprints
A
NOTES:
N 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: INCH.
SEATING 3. ALL RULES AND NOTES ASSOCIATED WITH
-T- PLANE
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
0.13 (0.005) M T Q M Y M
A 1.550 REF 39.37 REF
B — 1.050 — 26.67
U 0.250 0.335 6.35 8.51
L -Y- C
V D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
2 H 0.215 BSC 5.46 BSC
G B
H 1 K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N — 0.830 — 21.08
-Q- Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
0.13 (0.005) M T Y M V 0.131 0.188 3.33 4.77
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE
2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY
CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE
STYLE 6: STYLE 7: STYLE 8: STYLE 9:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1
2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2
CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE
CASE 1-07
ISSUE Z
A
N
E
K NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
-T- 2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A — 1.550 — 39.37
D 2 PL B — 1.050 — 26.67
0.25 (0.010) M T V M Q M C 0.250 0.450 6.35 11.43
D 0.039 0.043 0.99 1.09
E — 0.135 — 3.43
U G
-V- 0.430 BSC 10.92 BSC
L H 0.215 BSC 5.46 BSC
-Q- K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
0.25 (0.010) M T V M 2
N — 0.830 — 21.08
Q 0.151 0.161 3.84 4.09
G B U 1.187 BSC 30.15 BSC
1 V 0.151 0.161 3.84 4.09

PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE PIN 1. ANODE #1 1. CATHODE #1
2. EMITTER 2. BASE 2. CATHODE 2. ANODE #2 2. CATHODE #2
CASE: COLLECTOR CASE: COLLECTOR CASE: CATHODE CASE: ANODE
CASE 11-03
ISSUE G
Package Outline Dimensions and Footprints Rectifier Device Data

9–2
PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)
NOTES:
B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D INCHES MILLIMETERS
DIM MIN MAX MIN MAX
R A — 0.505 — 12.82
Q 1
P B 0.424 0.437 10.77 11.09
C — 0.405 — 10.28
D — 0.250 — 6.35
E 0.060 — 1.53 —
F 0.075 0.175 1.91 4.44
K J 0.422 0.453 10.72 11.50
E K 0.600 0.800 15.24 20.32
C P 0.163 0.189 4.14 4.80
SEATING
PLANE Q 0.060 0.095 1.53 2.41
R 0.265 0.424 6.74 10.76
F J
2
10 32UNF-2A
STYLE 1: STYLE 2: STYLE 3:

TERM. 1. CATHODE TERM. 1. ANODE TERM. 1. ANODE
2. ANODE 2. CATHODE 2. ANODE
CASE 56-03
(DO-4)
ISSUE G
NOTES:
1. POLARITY DENOTED BY CATHODE BAND.
2. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
A F — 1.27 — 0.050
K 27.94 — 1.100 —
F
K
CASE 59-03
(DO-41)
ISSUE M

9–3
NOTES:
1. POLARITY DENOTED BY CATHODE BAND.
2. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D MILLIMETERS INCHES
K
DIM MIN MAX MIN MAX
A 5.97 6.60 0.235 0.260
B 2.79 3.05 0.110 0.120
A D 0.76 0.86 0.030 0.034
K 27.94 — 1.100 —
CASE 59-04
(DO-41)
ISSUE M
NOTES:
B Y14.5M, 1982.
1
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
K A — 0.450 — 11.43
B — 0.350 — 8.89
C — 0.300 — 7.62
C D 0.046 0.056 1.17 1.42
K 0.980 — 24.90 —
K
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. ANODE
2 2. ANODE 2. CATHODE
D
CASE 60-01
ISSUE E

9–4
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A 8.43 8.69 0.332 0.342
B 4.19 4.45 0.165 0.175
D 5.54 5.64 0.218 0.222
F 5.94 6.25 0.234 0.246
M M 5° NOM 5° NOM
D
B F
CASE 193-04
ISSUE J
D
NOTES:
1 1. CATHODE SYMBOL ON PACKAGE.
MILLIMETERS INCHES
K DIM MIN MAX MIN MAX
A 8.43 8.69 0.332 0.342
B 5.94 6.25 0.234 0.246
D 1.27 1.35 0.050 0.053
K 25.15 25.65 0.990 1.010
B
STYLE 1:
PIN 1. CATHODE
K 2. ANODE
2
CASE 194-04
ISSUE F

9–5
NOTES:
Y14.5M, 1982.
-T- SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4 A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3
U D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.018 0.025 0.46 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V 0.045 — 1.15 —
Z — 0.080 — 2.04
N

PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

PIN 1. GATE PIN 1. GATE PIN 1. DRAIN
2. COLLECTOR 2. SOURCE 2. SOURCE
3. EMITTER 3. DRAIN 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE
CASE 221A-06
(TO-220AB)
ISSUE Y

9–6
NOTES:
Y14.5M, 1982.
S B 2. CONTROLLING DIMENSION: INCH.
T
C INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4 Q A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
A F C 0.160 0.190 4.06 4.82
D 0.025 0.035 0.64 0.89
U F 0.142 0.147 3.61 3.73
1 3 G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
H J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
K L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.14 1.39
L T 0.235 0.255 5.97 6.48
R D
U 0.000 0.050 0.00 1.27
G
J
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. ANODE
2. N/A 2. N/A
3. ANODE 3. CATHODE
4. CATHODE 4. ANODE
CASE 221B-03
ISSUE B
SEATING
-T- PLANE
-B- C NOTES:
F 1. DIMENSIONING AND TOLERANCING PER ANSI
S Y14.5M, 1982.
Q
U INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
A 0.621 0.629 15.78 15.97
B 0.394 0.402 10.01 10.21
1 2 3
C 0.181 0.189 4.60 4.80
H D 0.026 0.034 0.67 0.86
-Y- F 0.121 0.129 3.08 3.27
K G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
G J L 0.045 0.060 1.14 1.52
N R N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
L R 0.107 0.111 2.72 2.81
D 3 PL S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78
0.25 (0.010) M B M Y
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:

PIN 1. GATE PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1
2. DRAIN 2. COLLECTOR 2. CATHODE 2. ANODE 2. ANODE 2. MT 2
3. SOURCE 3. EMITTER 3. ANODE 3. CATHODE 3. GATE 3. GATE
CASE 221D–02
ISSUE D

9–7
SEATING
-T- PLANE NOTES:
-B- C Y14.5M, 1982.
F
S
INCHES MILLIMETERS
U A 0.621 0.629 15.78 15.97
B 0.394 0.402 10.01 10.21
A
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
1 2 3 F 0.121 0.129 3.08 3.27
H G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
K -Y- J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
G J Q 0.126 0.134 3.21 3.40
N R R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
L U 0.259 0.267 6.58 6.78
D 2 PL
STYLE 1:
0.25 (0.010) M B M Y PIN 1. CATHODE
2. N/A
3. ANODE
CASE 221E-01
ISSUE O
NOTES:
F Y14.5M, 1982.
2. DIMENSION P IS A DIAMETER.
A 3. CHAMFER OR UNDERCUT ON ONE OR BOTH
ENDS OF HEXAGONAL BASE IS OPTIONAL.
4. ANGULAR ORIENTATION AND CONTOUR OF
TERMINAL ONE IS OPTIONAL.
B 5. THREADS ARE PLATED.
R MILLIMETERS INCHES
TERMINAL1 D DIM MIN MAX MIN MAX
A 16.94 17.45 0.669 0.687
Q B — 16.94 — 0.667
L C — 11.43 — 0.450
D — 9.53 — 0.375
K E 2.92 5.08 0.115 0.200
S E F — 2.03 — 0.080
C J 10.72 11.51 0.422 0.453
K — 25.40 — 1.000
L 3.86 — 0.156 —
P P 5.59 6.32 0.220 0.249
J 1/4 28UNF-2A Q 3.56 4.45 0.140 0.175
TERMINAL 2 R — 20.16 — 0.794
S — 2.26 — 0.089
STYLE 1: STYLE 2:
TERMINAL 1. CATHODE TERMINAL 1. ANODE
2. ANODE (CASE) 2. CATHODE (CASE)
CASE 257-01
ISSUE B

9–8
B
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI
Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
1 INCHES MILLIMETERS
A — 0.370 — 9.39
B — 0.250 — 6.35
D 0.048 0.052 1.22 1.32
A K 1.000 — 25.40 —
STYLE 1:
PIN 1. CATHODE
2. ANODE
K
2
CASE 267-02
ISSUE B
D NOTES:
Y14.5M, 1982.
1 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A 0.370 0.380 9.40 9.65
B 0.190 0.210 4.83 5.33
D 0.048 0.052 1.22 1.32
K 1.000 — 25.40 —
A STYLE 1:
PIN 1. CATHODE
2. ANODE
CASE 267-03
ISSUE C

9–9
C NOTES:
B Q E 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A 19.00 19.60 0.749 0.771
A B 14.00 14.50 0.551 0.570
L C 4.20 4.70 0.165 0.185
S
D 1.00 1.30 0.040 0.051
1 2 3 E 1.45 1.65 0.058 0.064
K G 5.21 5.72 0.206 0.225
H 2.60 3.00 0.103 0.118
J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259
L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167
S 17.50 18.10 0.689 0.712
U 3.40 3.80 0.134 0.149
V 1.50 2.00 0.060 0.078
D J
V H
G
STYLE 1: STYLE 2:
PIN 1. BASE PIN 1. ANODE
2. COLLECTOR 2. CATHODE
3. EMITTER 3. ANODE
4. COLLECTOR 4. CATHODE
CASE 340D-01
ISSUE A
NOTES:
C Y14.5M, 1982
B 2. CONTROLLING DIMENSION: MILLIMETER.
Q E
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 19.00 19.60 0.749 0.771
U 4
B 14.00 14.50 0.551 0.570
A C 4.20 5.00 0.165 0.196
L D 1.00 1.30 0.040 0.051
S E 1.45 1.65 0.058 0.064
1 2 3 G 10.42 11.44 0.411 0.450
K H 2.60 3.00 0.103 0.118
J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259
L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167
S 17.50 19.50 0.689 0.767
U 3.40 3.80 0.134 0.149
J V 1.50 2.00 0.060 0.078
D
V H
STYLE 1:
G PIN 1. CATHODE
3. ANODE
4. CATHODE
CASE 340E-01
ISSUE O

9–10
NOTES:
-T- 4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
-Q- E 5. CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) M T B M
-B- C MILLIMETERS INCHES
4 DIM MIN MAX MIN MAX
A 20.40 20.90 0.803 0.823
U L B 15.44 15.95 0.608 0.628
C 4.70 5.21 0.185 0.205
D 1.09 1.30 0.043 0.051
A E 1.50 1.63 0.059 0.064
R F 1.80 2.18 0.071 0.086
G 5.45 BSC 0.215 BSC
1 2 3 H 2.56 2.87 0.101 0.113
J 0.48 0.68 0.019 0.027
K 15.57 16.08 0.613 0.633
-Y- L 7.26 7.50 0.286 0.295
P
K P 3.10 3.38 0.122 0.133
Q 3.50 3.70 0.138 0.145
R 3.30 3.80 0.130 0.150
U 5.30 BSC 0.209 BSC
F H V 3.05 3.40 0.120 0.134
V J
D
G
0.25 (0.010) M Y Q S

PIN 1. GATE PIN 1. ANODE 1 PIN 1. BASE PIN 1. GATE
2. DRAIN 2. CATHODE(S) 2. COLLECTOR 2. COLLECTOR
3. SOURCE 3. ANODE 2 3. EMITTER 3. EMITTER
4. DRAIN 4. CATHODE(S) 4. COLLECTOR 4. COLLECTOR
CASE 340F–03
ISSUE E

9–11
POWERTAP MECHANICAL DATA
MAXIMUM MECHANICAL RATINGS
APPLIES OVER OPERATING TEMPERATURE
Terminal Penetration: 0.235 max 2″
Terminal Torque: 25–40 in-lb max
Mounting Torque —
Outside Holes: 30–40 in-lb max Vertical Pull 2 in. Lever Pull
Mounting Torque — 250 lbs max 50 lbs max
Center Hole: 8–10 in-lb max Note: While the POWERTAP is capable of sustaining these vertical and levered
Seating Plane 1 mil per in. tensions, the intimate contact between POWERTAP and heat sink may be lost.
This could lead to thermal runaway. The use of very flexible leads is recommended
Flatness (between mounting holes) for the anode connections. Use of thermal grease is highly recommended.
MOUNTING PROCEDURE
The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the
copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can
reduce thermal contact between the POWERTAP and heat sink.
2 – 3 TURNS 2 – 3 TURNS 2 – 3 TURNS
STEP 1:
POWER TAP
Locate the POWERTAP on the heat sink and start
mounting bolts into the threads by hand (2 or 3 turns). HEAT SINK
2 – 3 TURNS FINGER-TIGHT 2 – 3 TURNS
STEP 2:
Finger tighten the center bolt. The bolt may catch on POWER TAP
the threads of the heat sink so it is important to make
HEAT SINK
sure the face of the bolt or washer is in contact with
the surface of the POWERTAP. 5 – 10 IN-LB FINGER-TIGHT 5 – 10 IN-LB
STEP 3: POWER TAP

Tighten each of the end bolts between 5 to 10 in-lb. HEAT SINK
5 – 10 IN-LB 8 – 10 IN-LB 5 – 10 IN-LB
POWER TAP
STEP 4:
Tighten the center bolt between 8 to 10 in-lb. HEAT SINK
30 – 40 IN-LB 8 – 10 IN-LB 30 – 40 IN-LB
STEP 5: POWER TAP

Finally, tighten the end bolts between 30 to 40 in-lb. HEAT SINK
-A- W NOTES:
R 0.25 (0.010) M T A M B M
Y14.5M, 1982.
G N 3. TERMINAL PENETRATION: 5.97 (0.235) MAXIMUM.
INCHES MILLIMETERS
-B- DIM MIN MAX MIN MAX
A 3.450 3.635 87.63 92.33
Q 2 PL B 0.700 0.810 17.78 20.57
C 0.615 0.640 15.53 16.26
H F 0.25 (0.010) M T A M B M E 0.120 0.130 3.05 3.30
F 0.435 0.445 11.05 11.30
G 1.370 1.380 34.80 35.05
H 0.007 0.030 0.18 0.76
SEATING N 1/4–20UNC 2B 1/4–20UNC 2B
C -T- PLANE Q 0.270 0.285 6.86 7.32
E R 31.50 BSC 80.01 BSC
U V U 0.600 0.630 15.24 16.00
V 0.330 0.375 8.39 9.52
CASE 357C–03 W 0.170 0.190 4.32 4.82
ISSUE C

9–12
0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172
inches
mm
DPAK
FOOTPRINT
SEATING
-T- PLANE NOTES:
B C Y14.5M, 1982.
V R E
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
4 B 0.250 0.265 6.35 6.73
Z C 0.086 0.094 2.19 2.38
A D 0.027 0.035 0.69 0.88
S E 0.033 0.040 0.84 1.01
1 2 3
F 0.037 0.047 0.94 1.19
U
G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F J L 0.090 BSC 2.29 BSC
L R 0.175 0.215 4.45 5.46
H S 0.020 0.050 0.51 1.27
U 0.020 — 0.51 —
D 2 PL V 0.030 0.050 0.77 1.27
G 0.13 (0.005) M T Z 0.138 — 3.51 —

PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE
2. COLLECTOR 2. DRAIN 2. N/A 2. ANODE 2. ANODE
3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE
CASE 369A-13
(DPAK)
ISSUE W

9–13
0.171
4.343
0.150
3.810
inches
mm
0.110
2.794
SMC
FOOTPRINT
S
A NOTES:
Y14.5M, 1982.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D B
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.260 0.280 6.60 7.11
B 0.220 0.240 5.59 6.10
C 0.075 0.095 1.90 2.41
D 0.115 0.121 2.92 3.07
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
K 0.030 0.050 0.76 1.27
C P 0.020 REF 0.51 REF
S 0.305 0.320 7.75 8.13
J H
K P
CASE 403-03
(SMC)
ISSUE B

9–14
0.089
2.261
0.108
2.743 inches
mm
0.085
2.159
SMB
FOOTPRINT
A NOTES:
Y14.5M, 1982.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D B
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.160 0.180 4.06 4.57
B 0.130 0.150 3.30 3.81
C 0.075 0.095 1.90 2.41
D 0.077 0.083 1.96 2.11
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
C K 0.030 0.050 0.76 1.27
P 0.020 REF 0.51 REF
S 0.205 0.220 5.21 5.59
H
K P J
CASE 403A-03
(SMB)
ISSUE B

9–15
0.33
8.38
0.08
0.42 2.032
0.24
10.66 6.096
0.04
1.016
0.12
3.05
0.63
inches
17.02
mm
D2PAK
FOOTPRINT
C
E
B V
NOTES:
4 Y14.5M, 1982.
A INCHES MILLIMETERS
DIM MIN MAX MIN MAX
S A 0.340 0.380 8.64 9.65
1 2 3
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89
-T- K E 0.045 0.055 1.14 1.40
SEATING G 0.100 BSC 2.54 BSC
PLANE H 0.080 0.110 2.03 2.79
G J
J 0.018 0.025 0.46 0.64
H K 0.090 0.110 2.29 2.79
D 3 PL S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
0.13 (0.005) M T

PIN 1. BASE PIN 1. GATE PIN 1. ANODE
2. COLLECTOR 2. DRAIN 2. N/A
3. EMITTER 3. SOURCE 3. ANODE
4. COLLECTOR 4. DRAIN 4. CATHODE
CASE 418B-02
D2PAK
ISSUE B

9–16
NOTES:
Y14.5M, 1982.
INCHES MILLIMETERS
A B DIM MIN MAX MIN MAX
A 0.330 0.342 8.38 8.69
B 0.270 0.090 6.86 7.37
C 0.275 0.290 6.98 7.37
D 0.218 0.223 5.54 5.66
E 0.060 0.080 1.52 2.03
H 0.255 0.275 6.48 6.98
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
D E
CASE 421A–01
ISSUE O
A C NOTES:
H Y14.5M, 1982.
ÂÂÂÂ
1
INCHES MILLIMETERS
ÂÂÂÂ
DIM MIN MAX MIN MAX
A 0.055 0.071 1.40 1.80
B 0.100 0.112 2.55 2.85
C 0.037 0.053 0.95 1.35
K B D 0.020 0.028 0.50 0.70
E 0.010 — 0.25 —
H 0.000 0.004 0.00 0.10
J — 0.006 — 0.15
K 0.140 0.152 3.55 3.85
2 E
STYLE 1:
PIN 1. CATHODE
J 2. ANODE
D
CASE 425-04
(SOD–123)
ISSUE C

9–17
A H
B L NOTES:
C Y14.5M, 1982.
R 2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS INCHES
A 31.50 31.70 1.240 1.248
G B 7.80 8.20 0.307 0.322
4 3 C 4.10 4.30 0.161 0.169
M N D 14.90 15.10 0.586 0.590
1 2 E 30.10 30.30 1.185 1.193
F 38.00 38.20 1.496 1.503
G 4.00 0.157
H 11.80 12.20 0.464 0.480
L 8.90 9.10 0.350 0.358
M 12.60 12.80 0.496 0.503
D P N 25.20 25.40 0.992 1.000
P 1.95 2.05 0.076 0.080
E S Q 4.10 0.157
R 0.75 0.85 0.030 0.033
F S 5.50 0.217
Recommended screw torque: 1.3 " 0.2 Nm STYLE 1:

PIN 3. SOURCE
STYLE 2:
PIN 1. CATHODE 1
STYLE 3:
PIN 1. CATHODE 1
Maximum screw torque: 1.5 Nm 4. GATE 2. ANODE 1 2. ANODE 2
5. DRAIN 3. ANODE 2 3. CATHODE 2
6. SOURCE 2 4. CATHODE 2 4. ANODE 1
SOT-227B

9–18
Section 10
Today’s Power Semiconductors
Rectifier Device Data AR598

10–1
AR598
AVALANCHE CAPABILITY OF TODAY'S POWER

SEMICONDUCTORS
R Borras, P Aloisi, D Shumate*
MOTOROLA Semiconductors, France, USA*
Paper published at the EPE Conference ’93, Brighton 9/93.
Abstract. Power semiconductors are used to switch high currents in fractions of a second and therefore belong
inherently to a world of voltage spikes. To avoid unnecessary breakdown voltage guardbands, new generations
of semiconductors are now avalanche rugged and characterized in avalanche energy.
This characterization is often far from application conditions and thus quite useless to the designer. It is easy to
verify that an energy rating is not the best approach to a ruggedness quantification because of avalanche energy
fluctuations with test conditions.
A physical and thermal analysis of the failure mechanisms leads to a new characterization method generating
easy–to–use data for safe designs. The short–term avalanche capability will be discussed with an insight of the
different technologies developed to meet these new ruggedness requirements.
Keywords. Avalanche, breakdown, unclamped inductive switching energy, safe operating areas.
INTRODUCTION
One obvious trend for new power electronic designs is to The energy is first stored in inductor L by turning on tran-
work at very high switching frequencies in order to reduce sistor Q for a period of time proportional to the peak current
the volume and weight of all the capacitive and inductive ele- desired in the inductor. When Q is turned off, the inductor re-
ments. The consequence is that most applications today re- verses its voltage and avalanches the Device Under Test un-
quire switching very high currents in fractions of a til all its energy is transferred. The DUT can be a rectifier or a
microsecond and therefore generate L x dI/dt voltage spikes MOSFET (the gate should always be shorted to the source).
due to parasitic inductance. Unfortunately these undesirable The standard characterization method consists in increas-
voltage levels sometimes reach the breakdown voltage of ing the peak current in the inductor until the device fails. The
power semiconductors that are not intended to be used in energy that the device can sustain without failing becomes a
avalanche. figure of merit of the ruggedness to avalanche :
The necessity for avalanche rugged power semiconduc-
tors has clearly been perceived by many semiconductor Waval = 1/2 L Ipeak2 BV(DUT) / (BV(DUT) – VCC) [1]
manufacturers who have come up with avalanche–energy
rated devices. The main limit of this method is that the energy level that
This paper will show the limits of an energy–based causes a failure in the DUT is not a constant but a function of
characterization model. It will concentrate on three different L and Vcc. This results of the fact that the avalanche duration
devices: Ultra Fast recovery Rectifiers, Schottky Barrier is function of the current decay slope (BV(DUT)–VCC)/L :
Rectifiers and MOSFETs. It will study their main failure
mechanisms and show the technological improvements that
guarantee an enhanced ruggedness. Table 1. Peak Current and Energy Causing Failures in a
This will lead to a new characterization that will help the de- 1A, 1000V Ultra Fast Recovery Rectifier.
signer choose correctly between overall cost and reliability. Inductor Value : 10mH 50mH 100mH
Peak Current : 1.7A 0.9A 0.8A
LIMITS OF AN AVALANCHE ENERGY Energy : 14mJ 20mJ 32mJ
CHARACTERIZATION
Practically all the characterizations are based on the follow- Table 1 indicates that the failure is not caused by an ener-
ing Unclamped Inductive Switching (UIS) test circuit (fig 1) : gy (i.e. it is not independent of the avalanche duration) but
rather by a current level that has to be derated versus time :
the devices can sustain a low current for a long period of time
(high energy) but at high avalanche currents they will fail af-
ter a few microseconds (low energy).
Therefore, unless the designer has a parasitic inductance
of value L in his circuit, the standard characterization data
will be useless, or worse, it might lead to an overestimate of
the ruggedness of his application : because parasitic induc-
tances are often an order of magnitude less than the test cir-
cuit inductance, the expected energy capability leads to
Figure 1. Standard UIS Characterization Circuit. excessive current levels.
AR598 Rectifier Device Data

10–2
The UIS test circuit is very easy to implement : the only im- This relationship can be added to figure 2 (see fig 3) :
portant point is that the transistor has to have a breakdown
voltage higher than the DUT. For low breakdown voltage de-
vices, a MOSFET might be preferred to the bipolar transistor.
The advantages of using a MOSFET are multiple : it is a
more rugged device, it is much easier to drive and its switch-
ing characteristics can be controlled by adding a resistor in
series with the gate. It is mandatory to limit this switching
speed to avoid having an avalanche energy measurement
dependent on the gate drive (i.e. gate resistor and gate to
source voltage values).
Anyhow, it is possible to generate very useful information
with this UIS test circuit by varying the inductor value. It is
also very important to present the data independently of the
values of Vcc and L. One solution can be to plot the maxi-
mum peak current versus the avalanche duration (fig 2) :
Figure 3. figure 2 + equation [2].
Thus the maximum peak current that can flow through the
parasitic inductance L is approximately 28A instead of 58A
that would have resulted of using equation [1].
UNDERSTANDING THE FAILURE MECHANISMS
Physical Approach
The following microscope photographs show the failure
locations for an Ultra Fast Recovery Rectifier (UFR), a
Schottky Barrier Rectifier (SBR) and a MOSFET :
Figure 2. Maximum Peak Current versus Avalanche

Duration for a 15A, 60V MOSFET in an UIS Test Circuit.
The advantage of this new graph is that the designer can

easily calculate the safety margin of his application and he
will not be mislead by an energy value that depends on too
many different parameters. If he knows the value of the para-
sitic inductance in his circuit he will be able to determine its
maximum peak current.
For instance, let us assume that the designer uses the
15A, 60V MOSFET characterized in figure 2. This device
sustains 500mJ with an inductor of 75mH according to equa-
tion [1]. Its typical breakdown voltage is 80V.
If the supply voltage Vdd is 12V and the parasitic induc-
tance L is 250µH, then the avalanche duration and maximum
peak current are related by
Ipeak = t (BVDSS – VDD) / L [2]
Figure 4. 4A, 1000V UFR Avalanche Failure.

10–3
and becomes visible in the forward characteristic of the diode.
Finally, when the punchthrough reaches considerable dimen-
sions, the device looks very similar to a low value resistor.
The failure does not always appear in the same region of
the die. For instance, high voltage UFRs have their punch-
through always located in a corner, MOSFETs often fail in the
corners or on the sides whereas SBRs have randomly located
failures.
Thermal Approach
Transient thermal response graphs generated by a stan-
dard ∆VDS method show the junction temperature evolution
for forward and avalanche constant current conduction in a
MOSFET. These graphs (fig 7) prove that the silicon efficien-
cy during avalanche and forward currents are similar.
Figure 5. 25A, 35V SBR Avalanche Failure.
Figure 7. 15A, 60V MOSFET Transient Thermal

Response for 800W, 400W, 200W Avalanche and 600W
Forward Conduction.
Figure 7 can be used to generate a transient thermal resis-

tance graph by plotting the temperature divided by the power
: the four graphs should then normally match. Some slight
differences show that the transient thermal resistance in-
creases with the current level : i.e. the 800W curve (10A
constant avalanche current) has a higher transient thermal
resistance than the 200W (2.5A). Therefore the thermal effi-
ciency in a MOSFET is not perfectly homogeneous versus
the avalanche current.
A similar analysis on an UFR or an SBR shows poor ther-
Figure 6. 20A, 500V MOSFET Avalanche Failure. mal efficiency in avalanche. This can be shown by compar-
ing the temperature rise after 1ms for forward and avalanche
These photographs show that the failure is generally a conduction pulses of same power (400W) :
punchthrough. The melt–through hole dimensions depend MOSFET ∆Tdirect=160°C ∆Tavalanche=180°C ratio=0.9
on the current level and avalanche duration.
A close look at the electrical characteristics of failed rectifi- UFR ∆Tdirect=120°C ∆Tavalanche=175°C ratio=0.7
ers on a curve tracer show three levels of degradation : low SBR ∆Tdirect=100°C ∆Tavalanche=150°C ratio=0.7
stressed diodes have a normal forward characteristic but
show an unusual leakage current before entering breakdown Electrical Approach
as if they had a high–value resistor in parallel : this resistance Considering the transient thermal responses of a device, it
can be explained by a small punchthrough. For medium deg- is possible to simulate the instantaneous junction tempera-
radation levels, the value of this pseudo–resistance decreases ture for any sort of power pulse.

10–4
Conducting this simulation on the data generated by the device at a constant current and presenting the maximum
UIS test it is possible to show that all the parts fail when they current capability versus time :
reach a “critical temperature” (fig 8) :
Figure 9. Constant Current Characterization Circuit.
Different test circuits similar to figure 9 have been pro-

posed by Gauen (1) and Pshaenich (2). Some unexpected
failures in MOSFETs suggest that the DUT should always be
Figure 8. 15A, 60V MOSFET Failure Points and Critical referenced to ground. Unlike UFRs and SBRs, MOSFETs
Temperature for different Inductor Values. react differently whether they are tied to ground or floating
around a fluctuating voltage. Many floating transistors fail at
At these critical temperatures the intrinsic carrier con- very low stress levels probably due to capacitive coupled
centration, ni, reaches levels close to those of the doping currents that turn–on the internal parasitic transistor.
concentrations : The test circuit shown in figure 9 sets a constant ava-
lanche current through the device until it fails, this duration
ni is proportional to T3/2 e – Eg / 2kT [3] can then be plotted for different current levels. This gener-
ates a graph similar to the UIS method, except that the cur-
rent is constant instead of decreasing linearly.
where T is the absolute temperature, Eg the energy bandgap
This leads to the definition of a “Safe Avalanching Area”
and k is Boltzmann’s constant.
(fig 10) that will guarantee a short–term reliability if the de-
At 200°C, ni exceeds 2 1014 cm–3 which corresponds to a
vice is used within this clearly defined area.
1000V material epitaxy concentration level. This means that
when the junction temperature reaches 300°C, the rectifier
looks more like a resistor than a diode. A local thermal run-
away then generates a hot spot and a punchthrough as can
be seen in figures 4, 5 and 6.
This failure analysis has shown that the failure mechanism
is essentially thermal : the devices are heated by the BVR x
IR power dissipation. Unfortunately, this power does not re-
main constant because the UIS circuit generates a linear cur-
rent decay and also the breakdown voltage varies with the
current level and with the junction temperature.
In order to have a complete characterization of the device
it is interesting to see how it reacts to a constant avalanche
current and different ambient temperatures.
NEW CHARACTERIZATION METHOD PROPOSAL

During the prototype phase, it is easier for the designer to
measure the avalanche current and duration than the cir-
cuit’s parasitic inductance. Therefore, the characterization Figure 10. 1A, 30V SBR Save Avalanching Area.
should be based on easy to measure parameters. The failure
analysis proves that the main cause of degradation is the in- This graph gives the maximum avalanche duration for any
ability to handle an excessive power (avalanche current IR value of avalanche current.
multiplied by breakdown voltage BVR). A proper character- The Safe Avalanching Area is generated by taking a safety
ization should present the maximum power capability versus margin from the failure points. Another approach would be to
time. dynamically measure the temperature as in figure 7 and
As the avalanche voltage varies only slightly with the cur- generate an area defined by a maximum allowable junction
rent level, the proposed method is based on avalanching a temperature.

10–5
As the failure mechanism is related to a peak junction tem- where k is a constant function of the die size, the breakdown
perature, it is necessary to give Safe Avalanching Areas for voltage and other parameters. Constant A can be extracted
different ambient temperatures (fig 11) : from figure 12 and similar figures for UFRs and MOSFETs :
IR = k T –0.55 [5]
Relation [5] is a consequence of heat propagation laws

which explain that the temperature in a semiconductor rises
proportionally to t 0.5 (for a constant current pulse and as
long as the temperature remains within the silicon die). This
can be seen in any transient thermal resistance graph.
A standard thermal calculation shows that :
TJ = TA + PD RthJA(t),
or [6]
PD = (TJ–TA) / RthJA(t)
where :
TJ, TA are the junction and ambient temperatures,
PD is the power dissipation,
RthJA(t) is the transient thermal resistance.
Given a constant power pulse and for values of t less than
1ms, [6] is equivalent to :
IR BVR = (TJ–TA) / ( k t 0.5 )
Figure 11. 25A, 35V SBR Safe Avalanching Areas for so [7]
different ambient temperatures. IR = k t –0.5
This relation is similar to [5]. For avalanche durations of

When the data in figures 10 and 11 is plotted on log/log less than 500µs the heat propagates within the silicon only.
axes instead of lin/log or lin/lin, an interesting feature ap- For longer durations the heat reaches the solder and the
pears (fig 12) : package so the propagation characteristics are modified .
The devices heat faster or slower and therefore the IR=f(t)
slope changes. Empirical data shows that A in relation [4] re-
mains within –0.5 to –0.6.
Relation [7] can also be expressed by :
IR2 t = k (k:constant) [7bis]
This rule of thumb works out much better than the, unfortu-
nately too common, 1/2 L I2 law.
For example, when applied to the example following figure
2 (which is UIS and not Constant Current generated) to de-
termine the maximum peak current in a 250µH inductor and
by choosing for instance the 9A,500µs point, relation [7bis]
can be written :
9A2 500µs = Ipeak2 100µs
This gives a conservative value of 20A instead of a real
value of 28A whereas the 1/2 L I2 method generates a cata-
strophic 58A value.
Figure 12. figure 12 on log/log axes. TECHNOLOGY TRADEOFFS
Ultra Fast Recovery Rectifiers

Figure 12 shows a linear relationship between current and The UFR devices are based on a Mesa technology (fig 13)
time on a log/log plot. This means that : with a Phosphorus doped (n–type) substrate. The heavily
doped N+ substrate is followed by a lighter N– epitaxial layer.
log(IR) = A log(t) + B, The P+ is diffused into the epitaxy to form the P–N junction.
so [4]
IR = k TA The passivation follows the perimeter of the die.

10–6
Figure 13. UFR Technology, Profile and Electric Field. Figure 14. SBR Technology with P–N Guard Rings
The epitaxy characteristics determine the major electrical

parameters of the device. A designed experiment was con- MOSFETs
ducted varying the epitaxy thickness and resistivity. The out- MOSFETs can also be compared to UFRs as long as the
put responses were the forward voltage, the breakdown internal parasitic bipolar transistor (due to the P–tub) does
voltage, the leakage current and the avalanche capability. A not turn–on. The latest MOSFET generations reduce the P–
wide range of epitaxy materials was chosen to determine the resistance to avoid biasing this NPN.
general trends for all the effects. While analyzing different constant current test circuits, it
Although the results were predictable for the static param- appeared that devices used in a floating configuration can
eters, the avalanche capability results were not. have very poor avalanche capabilities.
A key issue is the electric field extension. If it terminates Due to their cellular technology, MOSFETs conduct very
before the substrate the avalanche capability increases by efficiently avalanche currents. They can sustain avalanche
increasing the epitaxy resistivity. If the field extends into the power levels close to those of forward conduction ratings.
N+ region (reach–through) the avalanche capability is con-
siderably reduced.
CONCLUSION
The avalanche capability is proportional to the die size and
The necessity of characterizing the avalanche capability of
not to the perimeter. This confirms that the avalanche current
power semiconductors has been explained. An analysis of
is vertical and not only a surface or passivation related phe-
the standard UIS test circuit has shown the limits of a charac-
nomenon.
terization based on energy ratings. Throughout a discussion
The failures always occur in the corners where the electric
of the main failure mechanisms, a new thermal approach has
field is most critical. These failures are essentially function of
been proposed to help designers set safety levels in their de-
the thermal characteristics of the device when conducting
signs. This paper sets new standards for characterizing ava-
avalanche currents. Therefore the avalanche capability de-
lanche ruggedness.
creases when the ambient temperature increases and the
failures can normally be predicted by Safe Avalanching
Acknowledgements
Areas such as figure 12.
The authors would like to thank Jean–Michel REYNES,
Some unexpected defects though can radically degrade
design engineer at MOTOROLA Toulouse, for his help in un-
the avalanche capability. Defects in the epi such as pipes
derstanding the failure mechanisms.
cause premature failures but can often be screened by a
leakage current test that eliminates soft breakdown devices.
Defects in the passivation can generate parasitic oscillations References
during breakdown. 1. Gauen, K., 1987, ”Specifying Power MOSFET Avalanche
Stress Capability”, Power Technics Magazine, January
Schottky Rectifiers 2. Pshaenich, A., 1985, ”Characterizing Overvoltage
Due to P–N junction guard rings, SBR devices are very Transient Suppressors”, Powerconversion
similar to UFRs when conducting avalanche currents. These International, June/July
rectifiers have very low breakdown voltages and therefore
3. Cherniak, S., ”A Review of Transients and The Means
very thin epitaxy layers. This probably explains that the ava-
of Suppression”, MOTOROLA Application Note AN843
lanche–related failures occur anywhere on the die surface :
the thin N– region is relatively more heterogeneous with re- 4. Wilhardt, J., ”Transient Power Capability of Zener
spect to avalanche capability and thermal dissipation than a Diodes”, MOTOROLA Application Note AN784
thick UFR epitaxy.

10–7
10–8
1 Index and Cross Reference
2 Selector Guide
3 Schottky Data Sheets
4 Ultrafast Data Sheets

5 Data Sheets
Tape and Reel/

6 Packaging Specifications
7 Surface Mount Information
8 TO–220 Leadform Options

9 and Footprints

10 Today’s Power Semiconductors
=
= I-

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Ultrafast Data Sheets 4

Standard and Fast Recovery

Tape and Reel/

Surface Mount Information 7

TO–220 Leadform Options 8

Package Outline Dimensions

AR598: Avalanche Capability of

 Motorola, Inc. 1995

MOTOROLA DEVICE CLASSIFICATIONS

NOT RECOMMENDED FOR NEW DESIGN PRODUCTS

Rectifier Device Data Index and Cross Reference

Motorola Motorola Motorola Motorola

10CTF10 MUR840 4–56 1N4245GP 1N4003 5–2

11DQ03 1N5818 3–38 1N4933GP 1N4933 5–3

15CTO035 MBR1545CT 3–64 1N4942GP 1N4935 5–3

1N3613GP 1N4005 5–2 1N5186GP MR852 5–6

1N4003GP 1N4003 5–2 1N5401 1N5401 5–5

Index and Cross Reference Rectifier Device Data

1N5619GP 1N4937 5–3 21FQ045 MBR3545 3–148

1N5810 MUR420 4–31 31DQ04 1N5822 3–49

1N5825 1N5825 3–60 40D1 MR754 5–8

1N6095 1N6095 3–144 50SQ030 1N5824 3–60

200CNQ045 MBRP30045CT 3–183 55HQ030 MBR7545 3–172

Rectifier Device Data Index and Cross Reference

85HQ045 MBR8045 3–174 BYS93–50 MBRP30060CT 3–183

A115C MR856 5–6 BYT28–300 MUR1660CT 4–46

A14M 1N4005 5–2 BYV20–30 1N5827 3–135

ARS25A MR2504 5–12 BYV27–150 MUR120 4–23

BYP21–100 MUR820 4–56 BYV33–45 MBR2045CT 3–69

Index and Cross Reference Rectifier Device Data

CPT20045 MBRP20045CT 3–182 FE3A MUR420 4–31

EGP10D MUR120 4–23 FE6C MUR420 4–31

EGP50B MUR420 4–31 FEP16CT MUR1620CT 4–46

ERC80 MBR745 3–84 FES16FT MUR1560 4–71

ESAC33 MUR820 4–56 FES8HT MUR860 4–56

Rectifier Device Data Index and Cross Reference

FR254 MR856 5–6 GI1402 MUR820 4–56

FRM3220CC MUR3020PT 4–90 GI2504 MR2504 5–12

FST1245 MBR1545CT 3–64 GI754 MR754 5–8

FST30035 MBRP30045CT 3–183 GP10D 1N4003 5–2

GER4001 1N4001 5–2 HER101 MUR120 4–23

Index and Cross Reference Rectifier Device Data

MBR1045 MBR1045 3–86 MBR370 MBR3100 3–57

MBR150 MBR160 3–43 MBR6030L MBR6030L 3–160

MBR20020CTL MBRP20030CTL 3–181 MBR7545 MBR7545 3–172

MBR2030CTL MBR2030CTL 3–66 MBRD330 MBRD340 3–15

MBR30035CT MBRP30045CT 3–183 MBRF2545CT MBRF2545CT 3–109

Rectifier Device Data Index and Cross Reference

MR758 MR760 5–8 MUR3050PT MUR3060PT 4–90

MUR10020CT MURP20020CT 4–116 MUR470E MUR4100E 4–35

MUR150 MUR160 4–23 MUR620CT MUR620CT 4–39

MUR1605CT MUR1620CT 4–46 MUR870E MUR8100E 4–61

MUR1650CT MUR1660CT 4–46 MURD620CT MURD620CT 4–11

Index and Cross Reference Rectifier Device Data

R712XPT MUR3040WT 4–85 RGP30J MR856 5–6

RA256 MR2510 5–12 RL065 1N4005 5–2

RG2G MR856 5–6 RP300A MR852 5–6

RG4G MR856 5–6 RUR820 MUR820 4–56

RGP10J 1N4937 5–3 SB140 1N5819 3–38

Rectifier Device Data Index and Cross Reference

SB830 MBR745 3–84 SD41 SD41 3–144