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Fermi Dirac Distribution Function

Last updated August 25, 2018 by Electrical4U

Distribution functions are nothing but the probability

density functions used to describe the probability with
which a particular particle can occupy a particular
energy level. When we speak of Fermi-Dirac
distribution function, we are particularly interested
in knowing the chance by which we can find a
fermion in a particular energy state of an atom (more
information on this can be found in the article
“Atomic Energy States”). Here, by fermions, we mean
the electrons of an atom which are the particles with
½ spin, bound to Pauli exclusion principle.

Necessity of Fermi Dirac Distribution

Function
In fields like electronics, one particular factor which is
of prime importance is the conductivity of materials.
This characteristic of the material is brought about the
number of electrons which are free within the
material to conduct electricity.
As per energy band theory (refer to the article “Energy Compare Energy
Bands in Crystals” for more information), these are
Free Energy On
the number of electrons which constitute the
conduction band of the material considered. Thus Steel Structural

inorder to have an idea over the conduction Circuit Diagram

mechanism, it is necessary to know the concentration
Electric Power
of the carriers in the conduction band.

Fermi Dirac Distribution Expression

Mathematically the probability of finding an electron
in the energy state E at the temperature T is expressed » Protection
as of Lines or
Feeder

» TRIAC
Constructi
on
Where, Operation
and
Applicatio
ns of
is the Boltzmann constant
TRIAC

» Treatment
T is the absolute temperature
of Electric
Shock
Ef is the Fermi level or the Fermi energy
» Excess 3
Now, let us try to understand the meaning of Fermi Code
level. In order to accomplish this, put Addition
and
 Subtractio
n

in equation (1). By doing so, we get, » Switching

Algebra or
Boolean
Algebra

» Low Power
Factor
Operation
This means the Fermi level is the level at which one
of
can expect the electron to be present exactly 50% of
Induction
the time. Motor

Fermi Level in Semiconductors » BCD or

Binary
Intrinsic semiconductors are the pure semiconductors Coded
which have no impurities in them. As a result, they are Decimal |

characterized by an equal chance of finding a hole as BCD

that of an electron. This inturn implies that they have Conversion

Addition
the Fermi-level exactly in between the conduction and
Subtractio
the valence bands as shown by Figure 1a.
n

Next, consider the case of an n-type semiconductor.

Here, one can expect more number of electrons to be
present in comparison to the holes. This means that
there is a greater chance of finding an electron near to
the conduction band than that of finding a hole in the
valence band. Thus, these materials have their Fermi-
level located nearer to conduction band as shown by
Figure 1b.
Following on the same grounds, one can expect the
Fermi-level in the case of p-type semiconductors to be
present near the valence band (Figure 1c). This is
because, these materials lack electrons i.e. they have
more number of holes which makes the probability of
finding a hole in the valence band more in
comparison to that of finding an electron in the
conduction band.

Effect of temperature on Fermi-Dirac

Distribution Function

At T = 0 K, the electrons will have low energy and thus

occupy lower energy states. The highest energy state
among these occupied states is referred to as Fermi-
level. This inturn means that no energy states which
lie above the Fermi-level are occupied by electrons.
Thus we have a step function defining the Fermi-
Dirac distribution function as shown by the black
curve in Figure 2.

However as the temperature increases, the electrons

gain more and more energy due to which they can
even rise to the conduction band. Thus at higher
temperatures, one cannot clearly distinguish between
the occupied and the unoccupied states as indicated
by the blue and the red curves shown in Figure 2.

Related Articles

Energy Bands of Energy Bands in

Silicon Crystals

Intrinsic Intrinsic Silicon

Semiconductor and Extrinsic
Silicon

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