DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2141
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2141 is N-channel Power MOS Field Effect Transis-
(in millimeters)
tor designed for high voltage switching applications.

FEATURES 10.0 ± 0.3 4.5 ± 0.2

φ3.2 ± 0.2
2.7 ± 0.2
• Low On-state Resistance
RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• LOW Ciss Ciss = 1150 pF TYP.

15.0 ± 0.3

3 ± 0.1

12.0 ± 0.2
• High Avalanche Capability Ratings
• Isolated TO-220 (MP-45F) Package
1 2 3

4 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

13.5 MIN.
Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID (DC) ±6.0 A 0.65 ± 0.1
0.7 ± 0.1 1.3 ± 0.2 2.5 ± 0.1
Drain Current (pulse) ID (pulse)* ±24 A 1.5 ± 0.2
Total Power Dissipation (TC = 25 °C) PT1 35 W 2.54 TYP. 2.54 TYP.

Total Power Dissipation (Ta = 25 °C) PT2 2.0 W

1. Gate
Storage Temperature Tstg –55 to +150 °C 2. Drain
Channel Temperature Tch 150 °C 3. Source
1 2 3
Single Avalanche Current IAS** 6.0 A
Single Avalanche Energy EAS** 12 mJ
ISOLATED TO-220 (MP-45F)
*PW ≤ 10 µs, Duty Cycle ≤ 1%
Drain (D)
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

The diode connected between the gate and source of the

Body diode
transistor serves as a protector against ESD. When this device Gate (G)
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
Source (S)
applied to this device.

Document No. TC-2514

(O.D. No. TC–8073)
Date Published January 1995 P
Printed in Japan © 1995
 2SK2141

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-state Resistance RDS(on) 0.8 1.1 Ω VGS = 10 V, ID = 3.0 A
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance  yfs  2.0 S VDS = 10 V, ID = 3.0 A
Drain Leakage Current IDSS 100 µA VDS = 600V, VGS = 0
Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1150 pF VDS = 10 V
Output Capacitance Coss 260 pF VGS = 0
Reverse Transfer Capacitance Crss 60 pF f = 1 MHz
Turn-On Delay Time td(on) 15 ns VGS = 10 V
Rise Time tr 15 ns VDD = 150 V
Turn-Off Delay Time td(off) 75 ns ID = 3.0 A, RG = 10 Ω
Fall Time tf 13 ns RL = 37.5 Ω
Total Gate Charge QG 40 nC VGS = 10 V
Gate to Source Charge QGS 6.0 nC ID = 6.0 A
Gate to Drain Charge QGD 20 nC VDD = 480 V
Diode Forward Voltage VF(S-D) 1.0 V IF = 6.0 A, VGS = 0
Reverse Recovery Time trr 370 ns IF = 6.0 A
Reverse Recovery Charge Qrr 1.5 µC di/dt = 50 A/µs

Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time

D.U.T. D.U.T.
RG = 25 Ω L RL VGS
VGS 90 %
Wave VGS (on)
RG 10 %
0
PG. 50 Ω VDD PG. RG = 10 Ω Form
VDD
VGS = 20 → 0 V ID 90 %
90 %
VGS ID
BVDSS ID
10 % 10 %
0 Wave 0
IAS Form
ID VDS τ td(on) tr td (off) tf
VDD
ton toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch

Test Circuit 3: Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2141

TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
100 80
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

80
60

60
40
40

20
20

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - °C TC - Case Temperature - °C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA
DRAIN TO SOURCE VOLTAGE
100 12
10 V Pulsed
12 V
ID (pulse) 10
d PW 8V
ite )
ID - Drain Current - A

ID - Drain Current - A
L im 0 V =
10
10 (o
n)
=2 10
8
DS GS 0 s
R tV
µ

ID (DC) 1
(a m s
µ

1 s 6
Po 20 0 m
w 0m s
er
Di s 4
1.0 ss
ip
at
io VGS = 6 V
n 2
Li
TC = 25 °C m
ite
Single Pulse d
0.1
1.0 10 100 1 000 0 4 8 12 16 20
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE
100

50 Tch = 125 °C
ID - Drain Current - A

75 °C
25 °C
–25 °C
10

5.0

VDS = 10 V
1.0 Pulsed
0 5 10
VGS - Gate to Source Voltage - V

3
 2SK2141

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth (t) - Transient Thermal Resistance - °C/W

100 Rth (ch-a) = 62.5 °C/W

10
Rth (ch-c) = 3.57 °C/W

1.0

0.1

0.01
TC = 25 °C
Single Pulse
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS (on) - Drain to Source On-State Resistance - Ω

DRAIN CURRENT GATE TO SOURCE VOLTAGE
yfs - Forward Transfer Admittance - S

10
Pulsed

Tch = –25 °C 2.0

25 °C
75 °C ID = 6.0 A
125 °C 3.0 A
1.2 A
1.0
1.0

VDS = 10 V
Pulsed
0.1 0
0.1 1.0 10 0 4 8 12 16 20
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE

RDS (on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT vs. CHANNEL TEMPERATURE

VGS (off) - Gate to Source Cutoff Voltage - V

2.0 5.0
Pulsed

1.6 4.0

1.2 VGS = 10 V 3.0

20 V

0.8 2.0

0.4 1.0
VDS = 10 V
ID = 1 mA
0 0
1.0 10 100 – 50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - °C

4
 2SK2141

DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS (on) - Drain to Source On-State Resistance - Ω

CHANNEL TEMPERATURE FORWARD VOLTAGE
3.0 50
VGS = 10 V

ISD - Diode Forward Current - A

Pulsed 10

VGS = 10 V VGS = 0 V
2.0 1.0
ID = 6 A
3A
0.1
1.0

0.01

Pulsed
0
–50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - °C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 1 000

td (on), tr, td (off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

tr

Ciss
1 000 100 tf
td (off)

td (on)
Coss
100 10

Crss
TC = 25 °C VDD = 150 V
VGS = 10 V
Single Pulse RG = 10 Ω
10 1.0
1.0 10 100 1 000 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DYNAMIC INPUT CHARACTERISTICS DIODE FORWARD CURRENT
800 16 800
di/dt = 50 A/µ s
ID = ID (DC)
VDS - Drain to Source Voltage - V

VGS = 10 V
VGS - Gate to Source Voltage - V

trr - Reverse Recovery Time - ns

14
VDD = 450 V VGS
600 12 600
300 V
120 V 10

400 8 400

200 4 200
VDS
2

0 0
0 20 40 60 80 0.1 1.0 10 100
Qg - Gate Charge - nC Diode Forward Current - A

5
 2SK2141

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD STARTING CHANNEL TEMPERATURE
50 14
ID (peak = ID (DC)

EAS - Single Avalanche Energy - mJ

IAS - Single Avalanche Current - A

VDD = 150 V
12

10
10
IAS = 6.0 A 8
EA
S
=1 6
2m
J
4
RG = 25 Ω
1.0 VDD = 150 V 2
VGS = 20 V → 0
Starting Tch
0.5 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150
L - Inductance - H Starting Tch-Starting Channel Temperature - °C

6
 2SK2141

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

7
 2SK2141

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11