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3/21/2016

Summary
Electronic Devices
Ninth Edition Bohr Atom
Floyd The Bohr model of the atom is that electrons can circle
the nucleus only in specific orbits, which correspond to
Energy
discrete energy levels called shells.
Chapter 1
The atomic number is the
number of protons in the nucleus.

The outermost occupied shell is


called the valence shell and
electrons that occupy this shell are
Nucleus Shell 1
called valence electrons.
Shell 2

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Summary

Conductors Insulators
Materials can be classified by their ability to conduct Insulators have tightly bound electrons with few
electricity. This ability is related to the valence electrons. electrons available for conduction.
Core (+1) Nonmetals, such as glass, air, paper, and rubber are excellent
Copper is an example of an
insulators and widely used in electronics. Even these materials can
excellent conductor. It has only
break down and conduct
one electron in its valence band, electricity if the voltage is
which can easily escape to the high enough.
+29
conduction band, leaving behind a
positive ion (the core). Like all
metals, copper has many free
electrons which are loosely held
by the attraction of the positive
metal ions.

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Summary

Semiconductors Semiconductors
Semiconductors are between conductors and insulators In intrinsic silicon, a few electrons can jump the energy
in their ability to conduct electricity. gap between the valence and conduction band. Having
Silicon is an example of a single
Core (+4) moved into the conduction band, a “hole” (vacancy) is
element semiconductor. It has four left in the crystal structure.
+14
electrons in its valence band.
Conduction Free
band electron
+4

Unlike metals, silicon forms strong covalent Energy gap Heat


Energy
bonds (shared electrons) with its neighbors. +4 +4 +4 Valence Hole
Intrinsic silicon is a poor conductor because most band
of the electrons are bound in the crystal and take Electron-hole pair
+4
part in forming the bonds between atoms.

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

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Summary Summary

Semiconductors
Semiconductors
Within the crystalline structure, there are two types Certain impurities will change the conductivity of
of charge movement (current): silicon. An impurity such as Antimony has an electron
1) The conduction band electrons are free to move under the that is not part of the bonding electrons so is free. This
influence of an electric field. creates an n-material.
2) The bound (valence) electrons move between atoms, Free (conduction) electron
Si from Sb atom
effectively moving holes from one atom to another as
illustrated. Holes act like positive charges, with their own Where on the periodic table
mobility. Holes Electrons
would you expect to find another
Si Sb Si
element that could be used as an
impurity to create an n-material?
Si Si Si Elements above or below Sb will have Si

the same valence electron structure.

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Summary

Semiconductors The pn junction


A p- and an n-material together form a pn junction.
An impurity such as boron leaves a vacancy in the
valence band, creating a p-material. Both p- and n- When the junction is formed, conduction electrons move to the p-
region, and fall into holes. Filling a hole makes a negative ion and
materials have energy levels that are different than leaves behind a positive ion in the n-region. This creates a thin
intrinsic silicon. region that is depleted of free charges at the boundary.
Si Hole from Depletion region
B atom p region n region
What process stops the migration of – +

charge across the boundary? –



+
+
Si B Si
– +
A potential is built up (called the – +
– +
barrier potential) that prevents further – +

Si charge migration. – +

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Summary

The pn junction Diodes

The energy diagram for the n-region shows a lower A diode is a semiconductor device with a single pn
potential than for the p-region. Energy junction and metal connections to leads. It has the
ability to pass current in only one direction.
Conduction
band
Why do you think that the
Valence
energy level in the n- region band
p n

is lower than the p-region?


Depletion
0 region
n region
The n-region tends to have filled valence p region Depletion
shells; conduction electrons are shielded by region

these electrons, so they are further away


from the nucleus and have less energy.
Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

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Summary Summary

Forward bias Reverse bias

Forward bias is the condition which allows current in Reverse bias is the condition in which current is
the diode. The bias voltage must be greater than the blocked.
barrier potential. 0
I F (mA) VBR
VR 0
VBIAS Knee
VF
+ – – +
C
IF I=0A

R R
+ VBIAS VBIAS
B Knee –
+ – A +
0 VF IR
0 0.7 V

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Summary

Approximations Example

Three diode approximations are: Use the practical model to determine the current in the
IF IF IF circuit:
R

3.3 k
+
VBIAS 12 V
VR V F VR VF VR VF –
0.7 V 0.7 V

IR IR IR

Ideal Practical Complete VR  VBIAS  0.7 V  12 V  0.7 V  11.3 V


VR 11.3 V
In addition, the complete model includes the effect of a large reverse I   3.4 mA
resistance that accounts for a tiny current when reverse-biased. R 3.3 k

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Summary Selected Key Terms

Typical diode packages Electron The basic particle of negative electrical charge.

Some common configurations are Valence Related to the outer shell of an atom.
K
K A
K
Free Electron An electron that has acquired enough energy to
A
break away from the valence band of the parent
A K
A K
A
K
atom; also called a conduction electron.
K
A
Conductor A material that easily conducts electrical current.
K A
K K

A K
A Insulator A material that does not normally conduct
K current.
A

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

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Selected Key Terms Selected Key Terms

Semiconductor A material that lies between conductors and PN junction The boundary between two different types of
insulators in its conductive properties. semiconductive material.

Crystal A solid material in which the atoms are Barrier The amount of voltage required to produce
arranged in a symmetrical pattern. Potential full conduction across the pn junction in
forward bias.
Hole The absence of an electron in the valence
band of an atom in a semiconductor crystal. Forward bias The condition in which a diode conducts
current.
Diode A semiconductor device with a single pn
junction that conducts current in one direction Reverse bias The condition in which a diode prevents
only. current.

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Quiz Quiz

1. A semiconductor is a crystalline material with 2. A metallic conductor has


a. many free electrons held by the attraction of a. many free electrons held by the attraction of
positive ions positive ions
b. strong covalent bonds between neighboring atoms b. covalent bonds between neighboring atoms
c. only one electron in its outer shell c. four electrons in its outer shell
d. a filled valence shell d. a filled valence shell

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Quiz Quiz

3. In a semiconductor, the concept of an energy gap is 4. An impurity such as Antimony (Sb) has five electrons
used to show the difference between the energies of the in its outer shell. When silicon has Sb impurities,
a. nucleus and outer shell electrons a. an n material is formed
b. nucleus and the free electrons b. the crystal will be negatively charged
c. conduction band electrons and valence electrons c. both of the above
d. core electrons and valence electrons d. none of the above

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

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Quiz Quiz

5. Compared to a p-material, the energy levels in an n- 6. When a pn junction is formed, electrons move across
material are the junction and fill holes in the p-region. The filled hole
is a
a. the same
a. neutral atom
b. greater
b. minority carrier
c. lower
c. positive ion
d. negative ion

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Quiz Quiz

7. The forward biased knee voltage in a semiconductor 8. Using the ideal diode model, the current in the circuit
diode is approximately equal to the shown is
R
a. bias supply voltage a. 0.73 mA
10 k
b. breakdown voltage b. 0.80 mA +
VBIAS 8.0 V

c. output voltage c. 0.87 mA
d. barrier potential d. 1.2 mA

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

Quiz Quiz

9. Using the practical diode model, the current in the 10. The diode model which includes the large reverse
circuit shown is resistance is the
R R
a. 0.73 mA a. ideal model
10 k 10 k
b. 0.80 mA + b. practical model +
VBIAS 8.0 V VBIAS 8.0 V
– –
c. 0.87 mA c. complete model
d. 1.2 mA d. all of the above

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved. Thomas L. Floyd All rights reserved.

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Quiz

Answers:
1. b 6. d
2. a 7. d
3. c 8. b
4. a 9. a
5. c 10. c

Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.

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