2/5/2010

Power Semiconductor Switches

Pekik Argo Dahono

Power Semiconductor Switches

• Diodes (Uncontrolled switches)
• Thyristors (Controllable at turn-on but
uncontrolled at turn-off or commonly called
as latched devices). Triac is under the same
category.
• BJT, MOSFET, IGBT, GTO, MCT etc. are
fully controllable switches.

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Power Diodes

A A iAK iAK

A
P
P
N− v AK v AK
N
N
K

K K

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Reverse Recovery Problems

VFD

S
t rr
I FD

Ed FD Io

IS
Io

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Power diodes
Diodes are classified as:
- general purpose or line-frequency diodes
- Fast recovery diodes
- Schottky diodes

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Schottky Diode
• The schottky diode has a smaller voltage
drop compared to conventional diodes
(about 0.3 V).
• The schottky diode has a smaller voltage
breakdown than conventional diodes (less
than 200 V).

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Sample of diodes

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Thyristor
A iA

iA

N
v AK
G P

K Pekik A. Dahono -- Elektronika Daya 8

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Thyristor Model
I A = I E1
I B1
Q1
I C1 = −α1I E1 + I C 01
I C 2 = −α 2 I E 2 + I C 02
IC 2 I C1
IG α 2 I G + I C 01 + I C 02
IA =
Q2 1 − (α1 + α 2 )
I B2
IE2
Pekik A. Dahono -- Elektronika Daya 9

Thyristor in Simple Circuit

• For successful turn-off, reverse voltage required for an

interval greater than the turn-off interval

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Thyristor Classification
• Phase control thyristors
• Inverter-grade or fast-type thyristors
• Light activated thyristors
• Reverse conducting thyristors

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Thyristor Features
• Latching devices
• Double carrier devices
• Having forward and reverse blocking
capabilities
• Very high gain (IA/Ig)
• Low on-state voltage
• Can be protected by fuse
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Sample of thyristors

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Thyristor Modules

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Snubbers for Diodes and Thyristors

• Maximum dv/dt across diodes or thyristors

must be limited and can be done by using an
RC snubber that is connected in parallel to
the devices.
• Maximum di/dt through diodes or thyristors
must be limited and can be done by using an
inductor that is connected in series to the
devices.
Pekik A. Dahono -- Elektronika Daya 15

Switching Characteristics

Gate
signal

vT
iT
Io Transistor
voltage & Ed Io
Ed iT current
tdon tdoff
vT t fv t fi
tri t = t + t trv t
son ri fv soff = trv + t fi
1 1
Transistor Wson = Ed I ot son Wsoff = Ed I ot soff
2 2
power

Pcd

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Desired Switch Characteristics

• Small leakage current in the off state
• Small on-state voltage
• Short turn-on and turn-off times
• Large forward and reverse blocking voltage capabilities
• High on-state current rating
• Positive temperature coefficient of on-state resistance
• Small control power
• Wide Safe Operating Area
• Large dv/dt and di/dt ratings

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Safe Operating Area

i
turn - on
turn - off

v
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Losses
Switching losses :
Ps = 12 E d I o f s t son + t soff( )
fs is switching frequency.
Conduction losses :
TON
Pcd = Von I o
Ts
Ts is switching period.
Pekik A. Dahono -- Elektronika Daya 19

Bipolar Junction Transistor

iC iB 5 iC
iB 4
C iB 3
C iC iB 2
iB iB1 = 0
N
B vCE vCE
B P
N

E iB5 > iB 4 > iB3 > iB 2 > iB1

E

• Used commonly in the past

• Now used in specific applications
• Replaced by MOSFETs and IGBTs

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VI characteristics of BJT
Hard - saturation
Quasi - saturation

Second breakdown

IC I B5
Primary
I B4
breakdown
I B3
I B2
I B1 IB < 0
vCE
BVSUS BVCB0
I B0 = 0
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Operating region
• Hard-saturation provides low voltage-drop but a
large storage time (turn-off time)
• Quasi-saturation provides high voltage-drop but a
small storage time.
• Second breakdown must be avoided by using a
snubber and proper base current control.
• Negative base current results in higher voltage
breakdown.

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Antisaturation circuit
C
D1

B
B'
D2

D3
E
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BJT Features
• Current controlled devices
• Double carrier devices
• No reverse blocking capability
• Low gain (Ic/Ib)
• Low on-state voltage
• Can not be protected by fuse
• Second breakdown problem
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Darlington Configuration

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MOSFET

iD vGS 5 iD
vGS 4
D vGS 3
iD vGS 2
vGS1 = 0
G
vDS v DS

S
vGS 5 > vGS 4 > vGS 3 > vGS 2 > vGS1

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MOSFET Features
• Voltage controlled devices
• Single carrier devices
• High on-state voltage
• Very high gain
• No reverse blocking capability
• No second breakdown problem
• Can not be protected by fuse
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Integrated Power MOSFET

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Gate-Turn-Off (GTO) Thyristor

iA

Blocking
condition

v AK

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GTO switching characteristic

Anode
voltage

Anode IA
current Vd

Spike
voltage Tail
current

0
Time

IGR

(b)

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Turn-Off Snubber for GTO

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GTO Features
• Controllable at turn-on and turn-off
• High-voltage capability
• Can be designed with reverse blocking
capabilty
• Low gain at turn-off
• Low on-state voltage
• High turn-off losses
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GTO vs IGCT

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GTO vs IGCT

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Insulated Gate Bipolar Transistors (IGBTs)

iC vGE 5
C vGE 4
iC vGE 3
vGE 2
vGE1 = 0
G vCE

E
vGE5 > vGE 4 > vGE3 > vGE 2 > vGE1
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IGBT Features
• Combining the advantages of BJT and
MOSFET
• No reverse blocking capability
• No second breakdown
• High gain at turn on and turn off

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IGBT vs IGCT

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Other Switching Devices

• Static Induction Transistor and Static Induction
Thyristor. The main problems are normally-on and
high conduction loss. The advantage is that the
speed is very high.
• MOS Controlled Thyristor. Combining the
advantages of MOSFET and Thyristor. Still under
development.
• IGCT (Integrated Gate Controlled Thyristor). This
is further development of GTOs.
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Switching Device Development

WER
2000

105 GTO : GATE TURN-OFF THYRISTOR

H PO

E
IV
MCT : MOS CONTROLLED THYRISTOR
THYRISTOR

DR
HIG CY SI Thy : STATIC INDUCTION THYRISTOR
EN
SY
BPT : BIPOLAR POWER TRANSISTOR
EA QU 104
GTO
RE

P (kVA)
IGBT : INSULATED GATE BIPOLAR TRANSISTOR
F
GH
HI 1990
MCT SI Thy

CONTROLLABLE POWER
103

104
THYRISTOR IGBT
102

103 GTO
1980
BPT
P (kVA)

101
102
IGBT
MOS
104
THYRISTOR BPT
101 10-1 -1
103 10 100 101 102 104 105 106
P (kVA)

OPERATION FREQUENCY f (kHz)

GTO MOS
102
10-1 -1
10 100 101 102 104 105
101 BPT f (kHz)
10-1 -1
10 100 101 102 104
f (kHz)

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Reverse Conducting and

Reverse Blocking Switching Devices

Reverse conducting Reverse blocking

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Bidirectional Switches

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Switching devices
Ideal Switch

Unidirectional uncontrolled switch

Unidirectional semicontrolled switch

Bidirectional semicontrolled switch

Reverse conducting fully controlled switch

Reverse conducting fully controlled switch

Reverse blocking fully controlled switch

Bidirectional fully controlled switch

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Properties and Rating of

Semiconductor Power Switches
Switch Control Control Switching Voltage Maximum Maximum
signal characteristic frequency drop voltage current
rating rating
Diode medium 6.5 kV 5 kA
SCR current trigger low medium 6 kV 4 kA
TRIAC current trigger medium 1 kV 50 A
GTO current trigger low medium 6.5 kV 4.5 kA
BJT current linear medium low 1.5 kV 1 kA
MOSFET voltage linear Very high high 1 kV 200 A
IGBT voltage linear high medium 3.5 kV 2 kA

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Properties of New Materials

Property Si GaAs 3C-SiC 6H-SiC Diamond
Bandgap at 300 K 1.12 1.43 2.2 2.9 5.5
(eV)
Relative dielectric 11.8 12.8 9.7 10 5.5
constant
Saturated drift
velocity (cm/s) 1x107 2x107 2.5x107 2.5x107 2.7x107
Thermal 1.5 0.5 5.0 5.0 20
conductivity
(W/cm/o C
Maximum 400 460 873 1240 1100
operating
temperature (K)
Melting 1415 1238 Sublime>1800 Sublime>1800 Phase change
temperature (C)
Electron mobility 1400 8500 1000 600 2200
at 300 K (cm2 /Vs)
Breakdown
electric field 3x105 4x105 4x106 4x106 1x107
(V/cm)

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Applications
• Thyristor is only used for very large power
applications.
• Forced commutated thyristors are no longer used.
• Bipolar junction transistors are no longer used.
• MOSFET is commonly used in low-power
applications.
• IGBT is used from low-power up to medium
power applications.
• GTO is used for large power applications.
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Loss Considerations
• Conduction losses
• Switching losses
• The loss will determine the junction
temperature and the heatsink and cooler
required.
• In many cases, the switching frequency is
limited by the temperature instead of device
speed.
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Snubbers
• Turn-off losses can be reduced by using a turn-off
snubber. This snubber is also useful to limit high
dv/dt across the device.
• Turn-on losses can be reduced by using a turn-on
snubber. This snubber is also useful to limit high
di/dt through the device.
• Snubbers are useful to reduce the switching losses
on the switching devices. The total switching
losses, however, may still the same or even
increase.
Pekik A. Dahono -- Elektronika Daya 47

Turn-ON and turn-OFF Snubbers

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Reducing Switching Losses

• Switching losses can be reduced by using lossless
snubbers. These snubbers, however, may make the
converter circuit became complicated.
• IGBTs may operate without snubbers.
• GTOs and IGCTs usually need a turn-off snubber
because of high tail current.
• Switching losses can be reduced or even
eliminated by using soft-switching techniques.
These methods, however, may increase the
required voltage and/or current ratings.

Pekik A. Dahono -- Elektronika Daya 49

The End

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